WO2020258484A1 - Array substrate and preparation method therefor - Google Patents

Array substrate and preparation method therefor Download PDF

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Publication number
WO2020258484A1
WO2020258484A1 PCT/CN2019/102516 CN2019102516W WO2020258484A1 WO 2020258484 A1 WO2020258484 A1 WO 2020258484A1 CN 2019102516 W CN2019102516 W CN 2019102516W WO 2020258484 A1 WO2020258484 A1 WO 2020258484A1
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WO
WIPO (PCT)
Prior art keywords
layer
emitting device
light emitting
organic light
columnar
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PCT/CN2019/102516
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French (fr)
Chinese (zh)
Inventor
聂诚磊
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020258484A1 publication Critical patent/WO2020258484A1/en

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • This application relates to the field of display technology, in particular to an array substrate and a preparation method thereof.
  • OLED Organic Light Emitting Diode
  • RGB red, green and blue
  • IJP ink jet printing
  • the white light OLED display has the advantages of lower cost and less manufacturing difficulty. However, it still has some problems, that is, when a sub-pixel is lit, due to the existence of the OLED lateral leakage current, charge crosstalk (crosstalk) is formed. phenomenon.
  • the prior art display panel has the phenomenon of charge crosstalk.
  • the present application provides an array substrate and a preparation method thereof to solve the problem of charge crosstalk in a display panel.
  • an array substrate which includes:
  • the organic photoresist layer covers the pixel unit
  • a plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
  • the columnar layer is arranged on the organic photoresist layer and is located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses, and the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle ;
  • the organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a fractured state;
  • a cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  • the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
  • the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
  • the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
  • the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
  • an array substrate which includes:
  • the organic photoresist layer covers the pixel unit
  • a plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
  • a columnar layer disposed on the organic photoresist layer and located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses;
  • the organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle.
  • the array substrate further includes a cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  • the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
  • the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
  • the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
  • the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
  • the present application also provides a method for manufacturing an array substrate, the method including:
  • a plurality of electrode layers arranged at intervals are vapor-deposited on the organic photoresist layer
  • a columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
  • An organic light emitting device layer is vapor-deposited on the organic photoresist layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  • the preparation method further includes:
  • a cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
  • the beneficial effect of the present application is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.
  • FIG. 1 is a schematic top view of an array substrate provided by an embodiment of the application.
  • FIG. 2 is a schematic cross-sectional view of an array substrate provided by an embodiment of the application.
  • FIG. 3 is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application.
  • FIG. 4 is a flowchart of a method of an array substrate provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of the vapor deposition angle of the array substrate provided by the embodiment of the application.
  • the embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device, which are used to improve or eliminate the influence of feedthrough voltage, thereby improving the flicker problem of the display screen and improving the display quality of the liquid crystal display panel.
  • FIG. 1 is a schematic top view of an array substrate provided by an embodiment of the application.
  • the pixel includes a plurality of pixel units 101, and the pixel unit 101 may be a pixel unit of any color of red/green/blue/white.
  • the pixel unit 101 includes a red color.
  • the pixel units 101 of the four colors cooperate with each other, so that the display panel including the array substrate presents a color image.
  • the pixel unit 101 is placed on the organic photoresist layer 102 of the array substrate, and one side of the organic photoresist layer 102 is provided with a columnar layer 104.
  • the height of the columnar layer 104 is much higher than the height of the pixel unit 101, thereby reducing the lateral propagation path of the cathode layer (not shown in the figure) in the array substrate, thereby reducing the phenomenon of charge crosstalk.
  • A-A' represents the cross-cut line of the array substrate
  • B-B' represents the cross-cut line of the array substrate
  • the following is a cross-sectional view formed by cutting along A-A' and along B-B' Cut to form a longitudinal section for specific analysis.
  • FIG. 2 is a cross section of an array substrate provided by an embodiment of the application.
  • the array substrate includes: a plurality of pixel units 101;
  • the organic photoresist layer 102 covers the pixel unit 101;
  • a plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals;
  • the columnar layer 104 is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103, and the columnar layer 104 and the electrode layer 103 have different film thicknesses;
  • the organic light emitting device layer 105 is disposed on the columnar layer 104 and the electrode layer 103, and the organic light emitting device layer 105 on the columnar layer 105 and the organic light emitting device layer 105 on the electrode layer 103 are broken status.
  • the material of the columnar layer 104 includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx); the material of the electrode layer 103 includes graphene or indium tin oxide ( Indium tin oxide, ITO).
  • the longitudinal cross-sectional shape of the columnar layer 104 includes an inverted trapezoid or a rectangle.
  • the shape of the columnar layer 104 is approximately an inverted trapezoid.
  • the two sides of the lower end of the columnar layer 104 are embedded between the organic photoresist layer 102 and the electrode layer 103, making the columnar
  • the layer 104 and the electrode layer 103 have a partial overlap area to ensure that when the array substrate lights up a single pixel unit, current will pass from the columnar layer 104 to another pixel unit.
  • the inverted trapezoidal shape of the columnar layer 104 increases the distance between the two electrode layers 103, thereby improving the light leakage phenomenon caused by the excessively large gap between the two electrode layers 103 to a certain extent.
  • the array substrate also includes a cathode layer 106, the cathode layer 106 is disposed on the organic light emitting device layer 105, the cathode layer 106 on the columnar layer 104 and the electrode layer 103 The cathode layer 106 is in a broken state.
  • the material of the cathode layer 106 may be the same as the material of the electrode layer 103, and the material of the cathode layer 106 includes graphene or indium tin oxide (Indium tin oxide). tin oxide, ITO).
  • the longitudinal cross-sectional shape of the columnar layer 104 described above includes an inverted trapezoid or a rectangle.
  • the longitudinal cross-sectional shape of the cathode layer 106 includes a regular trapezoid, a triangle, or Any of the rectangles.
  • the cathode layer 106 includes the cathode layer above the columnar layer 104 or includes the cathode layer 104 above the electrode layer 103.
  • the slope of the slit formed between the columnar layer 104 and the cathode layer is parallel, because the slit is small. , Thereby improving the light leakage phenomenon of the array substrate.
  • the cathode layer 106 and the electrode layer 103 in the array substrate it is necessary to adjust when the cathode layer 106 and the electrode layer 103 are evaporated.
  • the vapor deposition angle of the two layers That is, along the longitudinal section direction of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light emitting device layer 105 on the electrode layer 103, and the width of the organic light emitting device layer 105 is greater than that of the organic light emitting device layer 105 The width of the upper cathode layer 106.
  • This structure makes the electrode layer 103, the organic light-emitting device layer 102 and the cathode layer 106 on the pixel unit form a slope similar to "mountain", so that the electrode layer 103 at the lower end of the slope is in contact with the columnar layer 104 while the The cathode layer 106 does not contact the columnar layer 104 and the organic light emitting device 105 above the columnar layer 104 and the cathode layer 106, thereby preventing a short circuit between the cathode layer 106 and the electrode layer 103, and intercepting the organic light emitting device layer in the array substrate.
  • the transverse current propagation path between 105 can effectively reduce the phenomenon of charge crosstalk.
  • the height of the columnar layer 104 is greater than the height of the electrode layer 103, or the height of the columnar layer 104 is greater than the height of the electrode layer 104, the organic light emitting device layer 105, and the cathode layer 106 sum.
  • the cathode layer 106 on the columnar layer 104 and the cathode layer 106 on the electrode layer 103 are not on the same horizontal plane, thereby blocking the array substrate.
  • the lateral current propagation path between the organic light emitting device layers 105 when the height of the columnar layer 104 is greater than the sum of the heights of the electrode layer 104, the organic light-emitting device layer 105 and the cathode layer 106, that is, in FIG.
  • the cathode layer 106 above the columnar layer 104 The cathode layer 106, which is much higher than the electrode layer 103, cuts off the lateral current propagation path between the organic light emitting device layers 105 in the array substrate and reduces the phenomenon of charge crosstalk.
  • the material of the organic photoresist layer 102 may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (HTL), Organic Emitting Material Layer (EML), Electron Transport Layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
  • HIL hole injection layer
  • HTL Hole Transport Layer
  • EML Organic Emitting Material Layer
  • EHL Electron Transport Layer
  • EIL Electron Transport Layer
  • EIL Electron Transport Layer
  • EIL Electron Transport Layer
  • FIG. 3 is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application.
  • the array substrate includes: a plurality of pixel units 101;
  • the organic photoresist layer 102 covers the pixel unit 101;
  • a plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals. In FIG. 3, the number of electrode layers 103 is one;
  • the organic light emitting device layer 105 is disposed on the electrode layer 103.
  • the cathode layer 106 is disposed on the organic light emitting device layer 105.
  • the columnar layer 104 is not shown in the figure, which is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103.
  • the columnar layer 104 and the electrode layer 103 have different films. Thick height, as can be seen from Fig. 1, cutting along BB', the columnar layer 104 does not appear in the longitudinal section, and the columnar layer is placed in front or behind the longitudinal section.
  • the electrode layer 103 serves as the anode in the array substrate
  • the cathode layer 106 serves as the cathode in the array substrate.
  • the organic light emitting device layer 105 is disposed between the electrode layer 103 and the cathode layer 106.
  • the anode material is generally indium tin oxide (ITO).
  • ITO indium tin oxide
  • Carrier injection is the passage of carriers
  • the process of entering the electrode layer 103/organic light emitting device 106 interface from the electrode layer 103 to the organic light emitting device layer 105. This process has a direct impact on the turn-on voltage, luminous efficiency, and working efficiency of the organic light-emitting device layer 105, which converts electrical energy into light energy, thereby causing the array substrate to emit light.
  • the present application also provides a method for manufacturing an array substrate, please refer to FIG. 4, the manufacturing method includes:
  • a columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between the adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
  • step S50 it further includes:
  • a cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
  • Fig. 5 a schematic diagram of the evaporation angle.
  • the ⁇ angle is the evaporation angle of the organic light-emitting device layer
  • the ⁇ angle is the evaporation angle of the cathode layer
  • the ⁇ angle must be greater than the ⁇ angle; this process
  • the process in FIG. 2 is: along the longitudinal section of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light-emitting device layer 105 on the electrode layer 103, and the width of the organic light-emitting device layer 105 is greater than that of the The width of the cathode layer 106 on the organic light emitting device layer 105.
  • the material of the columnar layer includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx);
  • the material of the electrode layer 103 includes graphene or Indium tin oxide (ITO);
  • the material of the cathode layer includes graphene or indium tin oxide (Indium tin oxide) tin oxide, ITO);
  • the material of the organic photoresist layer may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (Hole Transport Layer, HTL), organic light emitting layer (Emitting Material Layer, EML), electron transport layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
  • an embodiment of the present application also provides a display panel, including the array substrate provided by any embodiment of the present invention.
  • an embodiment of the present application provides a display device, including: the liquid crystal display panel provided by any embodiment of the present invention.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the beneficial effect is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.

Abstract

The present application provides an array substrate, comprising: a plurality of pixel units; an organic photoresist layer covering the pixel units; a plurality of electrode layers disposed on the organic photoresist layer and spaced apart from each other; a columnar layer disposed on the organic photoresist layer and located between adjacent ones of the electrode layers, wherein the columnar layer and the electrode layers have different film thicknesses and heights; and an organic light-emitting device layer disposed on the columnar layer and the electrode layers, wherein the organic light-emitting device layer on the columnar layer is separated from the organic light-emitting device layer on the electrode layers.

Description

阵列基板及其制备方法Array substrate and preparation method thereof 技术领域Technical field
本申请涉及显示技术领域,具体涉及一种阵列基板及其制备方法。This application relates to the field of display technology, in particular to an array substrate and a preparation method thereof.
背景技术Background technique
目前的有机发光二极管(Organic Light Emitting Diode,简称OLED)显示器,按照OLED显示器的镀膜方式分为红绿蓝(RGB)蒸镀、白光OLED以及喷墨打印(Ink Jet printing,IJP)技术。Current organic light emitting diode (Organic Light Emitting Diode, OLED for short) displays are classified into red, green and blue (RGB) evaporation, white light OLED, and ink jet printing (IJP) technologies according to the coating method of the OLED display.
其中,白光OLED显示具有成本较低,制造难度较小等优点,但是它也仍然存在一些问题,亦即在点亮一个子像素时,由于OLED横向漏电流的存在,而形成电荷串扰(crosstalk)现象。Among them, the white light OLED display has the advantages of lower cost and less manufacturing difficulty. However, it still has some problems, that is, when a sub-pixel is lit, due to the existence of the OLED lateral leakage current, charge crosstalk (crosstalk) is formed. phenomenon.
综上所述,现有技术的显示面板存在电荷串扰的现象。In summary, the prior art display panel has the phenomenon of charge crosstalk.
技术问题technical problem
本申请提供了一种阵列基板及其制备方法,以解决显示面板存在电荷串扰的问题。The present application provides an array substrate and a preparation method thereof to solve the problem of charge crosstalk in a display panel.
技术解决方案Technical solutions
为了解决上述问题,本申请实施例提供了一种阵列基板,该阵列基板包括:In order to solve the above-mentioned problem, an embodiment of the present application provides an array substrate, which includes:
多个像素单元;Multiple pixel units;
有机光阻层,覆盖于所述像素单元;The organic photoresist layer covers the pixel unit;
多个电极层,设置于所述有机光阻层上并间隔设置;A plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
柱状层,设置于所述有机光阻层上并位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度,所述柱状层纵截面形状包括倒梯形或者矩形;The columnar layer is arranged on the organic photoresist layer and is located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses, and the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle ;
有机发光器件层,设置于所述柱状层和电极层上,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态;The organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a fractured state;
阴极层,所述阴极层设置于所述有机发光器件层上,所述柱状层上的所述阴极层和所述电极层上的所述阴极层呈断裂状态。A cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
其中,所述阴极层的纵截面形状包括正梯形、三角形或者矩形中的任意一种。Wherein, the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
其中,沿所述阵列基板纵截面方向,所述电极层宽度大于所述电极层上的有机发光器件层的宽度,所述有机发光器件层的宽度大于所述有机发光器件层上的阴极层的宽度。Wherein, along the longitudinal section direction of the array substrate, the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
其中,所述柱状层的高度大于所述电极层的高度,或者,所述柱状层的高度大于所述电极层、所述有机发光器件层与所述阴极层的高度总和。Wherein, the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
其中,所述柱状层的材料包括氧化锂、酞氰铜、氧化锰的一种或者多种组合;所述电极层的材料包括石墨烯或者铟锡氧化物。Wherein, the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
其中,所述有机光阻层包括依次层叠设置的空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。Wherein, the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
为了解决上述问题,本申请实施例提供了一种阵列基板,该阵列基板包括:In order to solve the above-mentioned problem, an embodiment of the present application provides an array substrate, which includes:
多个像素单元;Multiple pixel units;
有机光阻层,覆盖于所述像素单元;The organic photoresist layer covers the pixel unit;
多个电极层,设置于所述有机光阻层上并间隔设置;A plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
柱状层,设置于所述有机光阻层上并位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度;A columnar layer disposed on the organic photoresist layer and located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses;
有机发光器件层,设置于所述柱状层和电极层上,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态。The organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
其中,所述柱状层纵截面形状包括倒梯形或者矩形。Wherein, the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle.
其中,所述阵列基板还包括阴极层,所述阴极层设置于所述有机发光器件层上,所述柱状层上的所述阴极层和所述电极层上的所述阴极层呈断裂状态。Wherein, the array substrate further includes a cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
其中,所述阴极层的纵截面形状包括正梯形、三角形或者矩形中的任意一种。Wherein, the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
其中,沿所述阵列基板纵截面方向,所述电极层宽度大于所述电极层上的有机发光器件层的宽度,所述有机发光器件层的宽度大于所述有机发光器件层上的阴极层的宽度。Wherein, along the longitudinal section direction of the array substrate, the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
其中,所述柱状层的高度大于所述电极层的高度,或者,所述柱状层的高度大于所述电极层、所述有机发光器件层与所述阴极层的高度总和。Wherein, the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
其中,所述柱状层的材料包括氧化锂、酞氰铜、氧化锰的一种或者多种组合;所述电极层的材料包括石墨烯或者铟锡氧化物。Wherein, the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
其中,所述有机光阻层包括依次层叠设置的空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。Wherein, the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
本申请还提供一种阵列基板的制备方法,所述方法包括:The present application also provides a method for manufacturing an array substrate, the method including:
形成多个像素单元;Forming multiple pixel units;
在所述多个薄膜晶体管上形成有机光阻层;Forming an organic photoresist layer on the plurality of thin film transistors;
在所述有机光阻层上蒸镀多个间隔设置的电极层;A plurality of electrode layers arranged at intervals are vapor-deposited on the organic photoresist layer;
在所述有机光阻层上蒸镀柱状层,所述柱状层位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度;A columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
在所述有机光阻层与所述电极层上蒸镀有机发光器件层,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态。An organic light emitting device layer is vapor-deposited on the organic photoresist layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
其中,在所述有机光阻层与所述电极层上蒸镀有机发光器件层之后,所述制备方法还包括:Wherein, after the organic light-emitting device layer is vapor-deposited on the organic photoresist layer and the electrode layer, the preparation method further includes:
在所述有机发光器件层上蒸镀阴极层,所述阴极层的蒸镀角度大于所述电极层的蒸镀角度,且小于所述有机发光器件层的蒸镀角度。A cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
有益效果Beneficial effect
本申请的有益效果是:通过在有机光阻层上方设置柱状层,以使有机光阻层与电极层上方的电极层断裂,减少阵列基板的横向传播途径,减少电荷串扰的现象。The beneficial effect of the present application is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.
附图说明Description of the drawings
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to explain the embodiments or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely inventions For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.
图1为本申请实施例提供的阵列基板的俯视示意图。FIG. 1 is a schematic top view of an array substrate provided by an embodiment of the application.
图2为本申请实施例所提供的阵列基板的横截面示意图。FIG. 2 is a schematic cross-sectional view of an array substrate provided by an embodiment of the application.
图3为本申请实施例所提供的阵列基板的纵截面示意图。3 is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application.
图4为本申请实施例所提供的阵列基板的方法流程图。FIG. 4 is a flowchart of a method of an array substrate provided by an embodiment of the application.
图5为本申请实施例所提供的阵列基板的蒸镀角度示意图。FIG. 5 is a schematic diagram of the vapor deposition angle of the array substrate provided by the embodiment of the application.
本发明的实施方式Embodiments of the invention
本发明实施例提供了一种阵列基板、液晶显示面板及显示装置,用以改善或消除馈通电压的影响,从而改善显示画面闪烁问题,提升液晶显示面板的显示品质。The embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device, which are used to improve or eliminate the influence of feedthrough voltage, thereby improving the flicker problem of the display screen and improving the display quality of the liquid crystal display panel.
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that can be implemented in this application. The directional terms mentioned in this application, such as [Up], [Down], [Front], [Back], [Left], [Right], [Inner], [Outer], [Side], etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to illustrate and understand the application, rather than to limit the application. In the figure, units with similar structures are indicated by the same reference numerals.
需要说明的是,本发明附图中各层的厚度和形状不反映真实比例,目的只是示意说明本申请实施例内容。It should be noted that the thickness and shape of each layer in the drawings of the present invention do not reflect the true ratio, and the purpose is only to schematically illustrate the content of the embodiments of the present application.
请参见图1,该图1为本申请实施例所提供的阵列基板的俯视示意图。在图1中,所述像素包括多个像素单元101,像素单元101可为红/绿/蓝/白的任意一种颜色的像素单元,其中,在该图1中,该像素单元101包括红色像素单元1011、绿色像素单元1012、蓝色像素单元1013与白色像素单元1014。该四种颜色的像素单元101相互配合,使得包括该阵列基板的显示面板呈现出彩色画面。该像素单元101置于阵列基板的有机光阻层102,该有机光阻层102的一侧设有柱状层104。该柱状层104的高度远远高于像素单元101的高度,以此减少了阵列基板中阴极层(图中未示出)的横向传播途径,进而减少电荷串扰的现象。Please refer to FIG. 1, which is a schematic top view of an array substrate provided by an embodiment of the application. In FIG. 1, the pixel includes a plurality of pixel units 101, and the pixel unit 101 may be a pixel unit of any color of red/green/blue/white. In FIG. 1, the pixel unit 101 includes a red color. Pixel unit 1011, green pixel unit 1012, blue pixel unit 1013, and white pixel unit 1014. The pixel units 101 of the four colors cooperate with each other, so that the display panel including the array substrate presents a color image. The pixel unit 101 is placed on the organic photoresist layer 102 of the array substrate, and one side of the organic photoresist layer 102 is provided with a columnar layer 104. The height of the columnar layer 104 is much higher than the height of the pixel unit 101, thereby reducing the lateral propagation path of the cathode layer (not shown in the figure) in the array substrate, thereby reducing the phenomenon of charge crosstalk.
在图1中,A-A’表示该阵列基板的横切线,B-B’表示该阵列基板的横切线,下面就根据沿A-A’切割形成的横截面图2与沿B-B’切割形成纵截面进行具体分析。In Figure 1, A-A' represents the cross-cut line of the array substrate, B-B' represents the cross-cut line of the array substrate, the following is a cross-sectional view formed by cutting along A-A' and along B-B' Cut to form a longitudinal section for specific analysis.
请参见图2,该图2为本申请实施例所提供的阵列基板的横截面。所述阵列基板包括:多个像素单元101;Please refer to FIG. 2, which is a cross section of an array substrate provided by an embodiment of the application. The array substrate includes: a plurality of pixel units 101;
有机光阻层102,覆盖于所述像素单元101;The organic photoresist layer 102 covers the pixel unit 101;
多个电极层103,设置于所述有机光阻层102上并间隔设置;A plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals;
柱状层104,设置于所述有机光阻层102上并位于相邻所述电极层103之间,所述柱状层104和所述电极层103具有不同膜厚高度;The columnar layer 104 is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103, and the columnar layer 104 and the electrode layer 103 have different film thicknesses;
有机发光器件层105,设置于所述柱状层104和电极层103上,所述柱状层105上的所述有机发光器件层105和所述电极层103上的所述有机发光器件层105呈断裂状态。The organic light emitting device layer 105 is disposed on the columnar layer 104 and the electrode layer 103, and the organic light emitting device layer 105 on the columnar layer 105 and the organic light emitting device layer 105 on the electrode layer 103 are broken status.
所述柱状层104的材料包括氧化锂(Li2O)、酞氰铜(CuPc)、氧化锰(OMOx)的一种或者多种组合;所述电极层103的材料包括石墨烯或者铟锡氧化物(Indium tin oxide,ITO)。The material of the columnar layer 104 includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx); the material of the electrode layer 103 includes graphene or indium tin oxide ( Indium tin oxide, ITO).
进一步的,所述柱状层104纵截面形状包括倒梯形或者矩形。在本实施例中,该柱状层104的形状近似为倒梯形,以该图2为例,该柱状层104的下端的两侧嵌入至有机光阻层102与电极层103之间,使得该柱状层104与该电极层103有部分重叠区域,确保阵列基板在点亮单个像素单元时,电流会从柱状层104传至另一个像素单元。除此之外,该倒梯形的形状的柱状层104增加了两个电极层103之间的距离,进而一定程度上改善了两个电极层103之间的间隙过大而产生的漏光现象。Further, the longitudinal cross-sectional shape of the columnar layer 104 includes an inverted trapezoid or a rectangle. In this embodiment, the shape of the columnar layer 104 is approximately an inverted trapezoid. Taking FIG. 2 as an example, the two sides of the lower end of the columnar layer 104 are embedded between the organic photoresist layer 102 and the electrode layer 103, making the columnar The layer 104 and the electrode layer 103 have a partial overlap area to ensure that when the array substrate lights up a single pixel unit, current will pass from the columnar layer 104 to another pixel unit. In addition, the inverted trapezoidal shape of the columnar layer 104 increases the distance between the two electrode layers 103, thereby improving the light leakage phenomenon caused by the excessively large gap between the two electrode layers 103 to a certain extent.
除此之外,该阵列基板还包括阴极层106,所述阴极层106设置于所述有机发光器件层105上,所述柱状层104上的所述阴极层106和所述电极层103上的所述阴极层106呈断裂状态。In addition, the array substrate also includes a cathode layer 106, the cathode layer 106 is disposed on the organic light emitting device layer 105, the cathode layer 106 on the columnar layer 104 and the electrode layer 103 The cathode layer 106 is in a broken state.
进一步的,所述阴极层106的材料与所述电极层103的材料可以相同,所述阴极层106的材料包括石墨烯或者铟锡氧化物(Indium tin oxide,ITO)。Further, the material of the cathode layer 106 may be the same as the material of the electrode layer 103, and the material of the cathode layer 106 includes graphene or indium tin oxide (Indium tin oxide). tin oxide, ITO).
需要指出的是,上述已说明所述柱状层104纵截面形状包括倒梯形或者矩形,为了使柱状层104能嵌入至该阵列基板,则所述阴极层106的纵截面形状包括正梯形、三角形或者矩形中的任意一种。在本实施例中,该阴极层106包括柱状层104上方的阴极层,或者包括电极层103上方的阴极层104。譬如,当所述阴极层106的形状为正梯形,所述柱状层104的形状为倒梯形,则该柱状层104与该阴极层之间形成的狭缝的坡度为平行的,由于狭缝小,进而改善该阵列基板的漏光现象。It should be pointed out that the longitudinal cross-sectional shape of the columnar layer 104 described above includes an inverted trapezoid or a rectangle. To enable the columnar layer 104 to be embedded in the array substrate, the longitudinal cross-sectional shape of the cathode layer 106 includes a regular trapezoid, a triangle, or Any of the rectangles. In this embodiment, the cathode layer 106 includes the cathode layer above the columnar layer 104 or includes the cathode layer 104 above the electrode layer 103. For example, when the shape of the cathode layer 106 is a regular trapezoid and the shape of the columnar layer 104 is an inverted trapezoid, the slope of the slit formed between the columnar layer 104 and the cathode layer is parallel, because the slit is small. , Thereby improving the light leakage phenomenon of the array substrate.
进一步的,在本申请实施例中,尤其在本阵列基板的工艺流程中,防止该阵列基板中阴极层106与电极层103发生短路,需要在蒸镀该阴极层106与电极层103时,调整该两层的蒸镀角度。即,沿所述阵列基板纵截面方向,所述电极层103宽度大于所述电极层103上的有机发光器件层105的宽度,所述有机发光器件层105的宽度大于所述有机发光器件层105上的阴极层106的宽度。此结构使得该像素单元上的该电极层103、有机发光器件层102与阴极层106形成一个近似于“山”字的坡度,使得该坡度下端的电极层103在接触柱状层104的同时,该阴极层106不接触该柱状层104及柱状层104以上的有机发光器件105与阴极层106,进而防止了阴极层106与该电极层103之间发生短路,截断了该阵列基板中有机发光器件层105之间的横向电流传播途径,能有效减少电荷串扰的现象。Further, in the embodiments of the present application, especially in the process flow of the array substrate, to prevent short circuit between the cathode layer 106 and the electrode layer 103 in the array substrate, it is necessary to adjust when the cathode layer 106 and the electrode layer 103 are evaporated. The vapor deposition angle of the two layers. That is, along the longitudinal section direction of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light emitting device layer 105 on the electrode layer 103, and the width of the organic light emitting device layer 105 is greater than that of the organic light emitting device layer 105 The width of the upper cathode layer 106. This structure makes the electrode layer 103, the organic light-emitting device layer 102 and the cathode layer 106 on the pixel unit form a slope similar to "mountain", so that the electrode layer 103 at the lower end of the slope is in contact with the columnar layer 104 while the The cathode layer 106 does not contact the columnar layer 104 and the organic light emitting device 105 above the columnar layer 104 and the cathode layer 106, thereby preventing a short circuit between the cathode layer 106 and the electrode layer 103, and intercepting the organic light emitting device layer in the array substrate. The transverse current propagation path between 105 can effectively reduce the phenomenon of charge crosstalk.
进一步的,所述柱状层104的高度大于所述电极层103的高度,或者,所述柱状层104的高度大于所述电极层104、所述有机发光器件层105与所述阴极层106的高度总和。Further, the height of the columnar layer 104 is greater than the height of the electrode layer 103, or the height of the columnar layer 104 is greater than the height of the electrode layer 104, the organic light emitting device layer 105, and the cathode layer 106 sum.
譬如,当所述柱状层104的高度大于所述电极层103的高度时,该柱状层104上的阴极层106与该电极层103上的阴极层106不在同一水平面,进而截断了该阵列基板中有机发光器件层105之间的横向电流传播途径。譬如,当所述柱状层104的高度大于所述电极层104、所述有机发光器件层105与所述阴极层106的高度总和时,即该图2中,该柱状层104上方的阴极层106远远高于该电极层103上方的阴极层106,截断了该阵列基板中有机发光器件层105之间的横向电流传播途径,减少电荷串扰的现象。For example, when the height of the columnar layer 104 is greater than the height of the electrode layer 103, the cathode layer 106 on the columnar layer 104 and the cathode layer 106 on the electrode layer 103 are not on the same horizontal plane, thereby blocking the array substrate. The lateral current propagation path between the organic light emitting device layers 105. For example, when the height of the columnar layer 104 is greater than the sum of the heights of the electrode layer 104, the organic light-emitting device layer 105 and the cathode layer 106, that is, in FIG. 2, the cathode layer 106 above the columnar layer 104 The cathode layer 106, which is much higher than the electrode layer 103, cuts off the lateral current propagation path between the organic light emitting device layers 105 in the array substrate and reduces the phenomenon of charge crosstalk.
在一些实施例中,该有机光阻层102的材料具体可包括空穴注入层(Hole Inject Layer,HIL)、空穴传输层(Hole Transport Layer,HTL)、有机发光层(Emitting Material Layer,EML)、电子传输层(Electron Transport Layer,EHL)及电子注入层(Electron Inject Layer,EIL)。In some embodiments, the material of the organic photoresist layer 102 may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (HTL), Organic Emitting Material Layer (EML), Electron Transport Layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
请参见图3,该图3为本申请实施例所提供的阵列基板的纵截面示意图。所述阵列基板包括:多个像素单元101;Please refer to FIG. 3, which is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application. The array substrate includes: a plurality of pixel units 101;
有机光阻层102,覆盖于所述像素单元101;The organic photoresist layer 102 covers the pixel unit 101;
多个电极层103,设置于所述有机光阻层102上并间隔设置,在本图3中,该电极层103的数量为一个;A plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals. In FIG. 3, the number of electrode layers 103 is one;
有机发光器件层105,设置于电极层103上。The organic light emitting device layer 105 is disposed on the electrode layer 103.
阴极层106,所述阴极层106设置于所述有机发光器件层105上。The cathode layer 106 is disposed on the organic light emitting device layer 105.
需要指出的是,图中未示出柱状层104,设置于所述有机光阻层102上并位于相邻所述电极层103之间,所述柱状层104和所述电极层103具有不同膜厚高度,由图1可知,沿B-B’切割,该柱状层104不出现于该纵截面中,该柱状层置于该纵截面的前方或者后方。It should be pointed out that the columnar layer 104 is not shown in the figure, which is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103. The columnar layer 104 and the electrode layer 103 have different films. Thick height, as can be seen from Fig. 1, cutting along BB', the columnar layer 104 does not appear in the longitudinal section, and the columnar layer is placed in front or behind the longitudinal section.
进一步的,在该图3中,所述电极层103作为该阵列基板中的阳极,所述阴极层106作为该阵列基板中的阴极。所述有机发光器件层105设置于所述电极层103与该阴极层106之间。在该阵列基板的制程中,由于有机发光器件的制程温度低,使得阳极材料一般为氧化铟-氧化锡玻璃电极(Indium tin oxide,ITO)。当阵列基板在电场作用下,该有机发光器件层105的电子和空穴分别从阴极层106和电极层103注入紧靠电极层103的有机光阻层102.载流子注入是载流子通过电极层103/有机发光器件106界面从电极层103进入到有机发光器件层105的过程。这个过程对有机发光器件层105的启亮电压、发光效率和工作效率具有直接影响,所述有机发光器件层105中将电能转换成光能,进而使得该阵列基板发光。Further, in FIG. 3, the electrode layer 103 serves as the anode in the array substrate, and the cathode layer 106 serves as the cathode in the array substrate. The organic light emitting device layer 105 is disposed between the electrode layer 103 and the cathode layer 106. In the manufacturing process of the array substrate, due to the low process temperature of the organic light-emitting device, the anode material is generally indium tin oxide (ITO). When the array substrate is under the action of an electric field, the electrons and holes of the organic light-emitting device layer 105 are injected from the cathode layer 106 and the electrode layer 103 into the organic photoresist layer 102 next to the electrode layer 103. Carrier injection is the passage of carriers The process of entering the electrode layer 103/organic light emitting device 106 interface from the electrode layer 103 to the organic light emitting device layer 105. This process has a direct impact on the turn-on voltage, luminous efficiency, and working efficiency of the organic light-emitting device layer 105, which converts electrical energy into light energy, thereby causing the array substrate to emit light.
由该图3可知,该阵列基板增加了柱状层104,该阵列基板中的纵向电流仍正常工作,解决横向电流的电荷串扰现象,未改变该阵列基板的高度。It can be seen from FIG. 3 that the columnar layer 104 is added to the array substrate, and the vertical current in the array substrate still works normally, which solves the charge crosstalk phenomenon of the lateral current without changing the height of the array substrate.
本申请还提供一种阵列基板的制备方法,请参见图4,该制备方法包括:The present application also provides a method for manufacturing an array substrate, please refer to FIG. 4, the manufacturing method includes:
S10、形成多个像素单元;S10, forming a plurality of pixel units;
S20、在所述多个薄膜晶体管上形成有机光阻层;S20, forming an organic photoresist layer on the plurality of thin film transistors;
S30、在所述有机光阻层上蒸镀多个间隔设置的电极层;S30, evaporating a plurality of electrode layers arranged at intervals on the organic photoresist layer;
S40、在所述有机光阻层上蒸镀柱状层,所述柱状层位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度;S40. A columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between the adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
S50、在所述有机光阻层与所述电极层上蒸镀有机发光器件层,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态。S50. Evaporate an organic light emitting device layer on the organic photoresist layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a fractured state .
进一步的,在步骤S50之后还包括:Further, after step S50, it further includes:
在所述有机发光器件层上蒸镀阴极层,所述阴极层的蒸镀角度大于所述电极层的蒸镀角度,且小于所述有机发光器件层的蒸镀角度。A cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
该蒸镀角度示意图请参见图5,在该图5中,其中α角是有机发光器件层的蒸镀角,β角是阴极层的蒸镀角;其中,α角需大于β角;该工艺流程在图2中为:沿所述阵列基板纵截面方向,所述电极层103宽度大于所述电极层103上的有机发光器件层105的宽度,所述有机发光器件层105的宽度大于所述有机发光器件层105上的阴极层106的宽度。Please refer to Fig. 5 for a schematic diagram of the evaporation angle. In Fig. 5, the α angle is the evaporation angle of the organic light-emitting device layer, and the β angle is the evaporation angle of the cathode layer; the α angle must be greater than the β angle; this process The process in FIG. 2 is: along the longitudinal section of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light-emitting device layer 105 on the electrode layer 103, and the width of the organic light-emitting device layer 105 is greater than that of the The width of the cathode layer 106 on the organic light emitting device layer 105.
在一些实施例中,所述柱状层的材料包括氧化锂(Li2O)、酞氰铜(CuPc)、氧化锰(OMOx)的一种或者多种组合;所述电极层103的材料包括石墨烯或者铟锡氧化物(Indium tin oxide,ITO);所述阴极层的材料包括石墨烯或者铟锡氧化物(Indium tin oxide,ITO);有机光阻层的材料具体可包括空穴注入层(Hole Inject Layer,HIL)、空穴传输层(Hole Transport Layer,HTL)、有机发光层(Emitting Material Layer,EML)、电子传输层(Electron Transport Layer,EHL)及电子注入层(Electron Inject Layer,EIL)。In some embodiments, the material of the columnar layer includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx); the material of the electrode layer 103 includes graphene or Indium tin oxide (ITO); the material of the cathode layer includes graphene or indium tin oxide (Indium tin oxide) tin oxide, ITO); the material of the organic photoresist layer may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (Hole Transport Layer, HTL), organic light emitting layer (Emitting Material Layer, EML), electron transport layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
基于同一申请构思,本申请实施例还提供了一种显示面板,包括本发明任意实施例提供的阵列基板。Based on the same application concept, an embodiment of the present application also provides a display panel, including the array substrate provided by any embodiment of the present invention.
基于同一申请构思,本申请实施例提供了一种显示装置,包括:本发明任意实施例提供的液晶显示面板。该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。Based on the same application concept, an embodiment of the present application provides a display device, including: the liquid crystal display panel provided by any embodiment of the present invention. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
有益效果为:通过在有机光阻层上方设置柱状层,以使有机光阻层与电极层上方的电极层断裂,减少阵列基板的横向传播途径,减少电荷串扰的现象。The beneficial effect is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.
除上述实施例外,本申请还可以有其他实施方式。凡采用等同替换或等效替换形成的技术方案,均落在本申请要求的保护范围。In addition to the foregoing implementation exceptions, this application may also have other implementation manners. All technical solutions formed by equivalent replacements or equivalent replacements fall within the protection scope claimed by this application.
综上所述,虽然本申请已将优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。In summary, although the preferred embodiments of this application have been disclosed as above, the preferred embodiments described above are not intended to limit the application. Those of ordinary skill in the art can make various decisions without departing from the spirit and scope of the application. Such changes and modifications, so the protection scope of this application is subject to the scope defined by the claims.

Claims (16)

  1. 一种阵列基板,其包括:An array substrate, which includes:
    多个像素单元;Multiple pixel units;
    有机光阻层,覆盖于所述像素单元;The organic photoresist layer covers the pixel unit;
    多个电极层,设置于所述有机光阻层上并间隔设置;A plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
    柱状层,设置于所述有机光阻层上并位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度,所述柱状层纵截面形状包括倒梯形或者矩形;The columnar layer is arranged on the organic photoresist layer and is located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses, and the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle ;
    有机发光器件层,设置于所述柱状层和电极层上,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态;The organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a fractured state;
    阴极层,所述阴极层设置于所述有机发光器件层上,所述柱状层上的所述阴极层和所述电极层上的所述阴极层呈断裂状态。A cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
  2. 根据权利要求1所述的阵列基板,其中,所述阴极层的纵截面形状包括正梯形、三角形或者矩形中的任意一种。The array substrate according to claim 1, wherein the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  3. 根据权利要求1所述的阵列基板,其中,沿所述阵列基板纵截面方向,所述电极层宽度大于所述电极层上的有机发光器件层的宽度,所述有机发光器件层的宽度大于所述有机发光器件层上的阴极层的宽度。The array substrate according to claim 1, wherein, along the longitudinal section of the array substrate, the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than the width of the organic light emitting device layer. The width of the cathode layer on the organic light emitting device layer.
  4. 根据权利要求1所述的阵列基板,其中,所述柱状层的高度大于所述电极层的高度,或者,所述柱状层的高度大于所述电极层、所述有机发光器件层与所述阴极层的高度总和。The array substrate according to claim 1, wherein the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the electrode layer, the organic light emitting device layer and the cathode The total height of the layer.
  5. 根据权利要求1所述的阵列基板,其中,所述柱状层的材料包括氧化锂、酞氰铜、氧化锰的一种或者多种组合;所述电极层的材料包括石墨烯或者铟锡氧化物。The array substrate according to claim 1, wherein the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; and the material of the electrode layer includes graphene or indium tin oxide .
  6. 根据权利要求1所述的阵列基板,其中,所述有机光阻层包括依次层叠设置的空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。8. The array substrate according to claim 1, wherein the organic photoresist layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are sequentially stacked.
  7. 一种阵列基板,其包括:An array substrate, which includes:
    多个像素单元;Multiple pixel units;
    有机光阻层,覆盖于所述像素单元;The organic photoresist layer covers the pixel unit;
    多个电极层,设置于所述有机光阻层上并间隔设置;A plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
    柱状层,设置于所述有机光阻层上并位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度;A columnar layer disposed on the organic photoresist layer and located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses;
    有机发光器件层,设置于所述柱状层和电极层上,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态。The organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  8. 根据权利要求7所述的阵列基板,其中,所述柱状层纵截面形状包括倒梯形或者矩形。8. The array substrate according to claim 7, wherein the longitudinal cross-sectional shape of the columnar layer comprises an inverted trapezoid or a rectangle.
  9. 根据权利要求7所述的阵列基板,其中,所述阵列基板还包括阴极层,所述阴极层设置于所述有机发光器件层上,所述柱状层上的所述阴极层和所述电极层上的所述阴极层呈断裂状态。8. The array substrate according to claim 7, wherein the array substrate further comprises a cathode layer disposed on the organic light emitting device layer, and the cathode layer and the electrode layer on the columnar layer The upper cathode layer is in a broken state.
  10. 根据权利要求9所述的阵列基板,其中,所述阴极层的纵截面形状包括正梯形、三角形或者矩形中的任意一种。9. The array substrate according to claim 9, wherein the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  11. 根据权利要求9所述的阵列基板,其中,沿所述阵列基板纵截面方向,所述电极层宽度大于所述电极层上的有机发光器件层的宽度,所述有机发光器件层的宽度大于所述有机发光器件层上的阴极层的宽度。9. The array substrate according to claim 9, wherein, along the longitudinal section direction of the array substrate, the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than the width of the organic light emitting device layer. The width of the cathode layer on the organic light emitting device layer.
  12. 根据权利要求9所述的阵列基板,其中,所述柱状层的高度大于所述电极层的高度,或者,所述柱状层的高度大于所述电极层、所述有机发光器件层与所述阴极层的高度总和。The array substrate according to claim 9, wherein the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the electrode layer, the organic light emitting device layer and the cathode The total height of the layer.
  13. 根据权利要求7所述的阵列基板,其中,所述柱状层的材料包括氧化锂、酞氰铜、氧化锰的一种或者多种组合;所述电极层的材料包括石墨烯或者铟锡氧化物。8. The array substrate according to claim 7, wherein the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; and the material of the electrode layer includes graphene or indium tin oxide .
  14. 根据权利要求7所述的阵列基板,其中,所述有机光阻层包括依次层叠设置的空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。8. The array substrate according to claim 7, wherein the organic photoresist layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are sequentially stacked.
  15. 一种阵列基板的制备方法,其包括:A preparation method of an array substrate includes:
    形成多个像素单元;Forming multiple pixel units;
    在所述多个薄膜晶体管上形成有机光阻层;Forming an organic photoresist layer on the plurality of thin film transistors;
    在所述有机光阻层上蒸镀多个间隔设置的电极层;A plurality of electrode layers arranged at intervals are vapor-deposited on the organic photoresist layer;
    在所述有机光阻层上蒸镀柱状层,所述柱状层位于相邻所述电极层之间,所述柱状层和所述电极层具有不同膜厚高度;A columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
    在所述有机光阻层与所述电极层上蒸镀有机发光器件层,所述柱状层上的所述有机发光器件层和所述电极层上的所述有机发光器件层呈断裂状态。An organic light emitting device layer is vapor-deposited on the organic photoresist layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  16. 根据权利要求15所述的阵列基板的制备方法,其中,在所述有机光阻层与所述电极层上蒸镀有机发光器件层之后,所述制备方法还包括:15. The manufacturing method of the array substrate according to claim 15, wherein after the organic light-emitting device layer is evaporated on the organic photoresist layer and the electrode layer, the manufacturing method further comprises:
    在所述有机发光器件层上蒸镀阴极层,所述阴极层的蒸镀角度大于所述电极层的蒸镀角度,且小于所述有机发光器件层的蒸镀角度。A cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
PCT/CN2019/102516 2019-06-24 2019-08-26 Array substrate and preparation method therefor WO2020258484A1 (en)

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