WO2020258484A1 - Substrat matriciel et son procédé de préparation - Google Patents

Substrat matriciel et son procédé de préparation Download PDF

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Publication number
WO2020258484A1
WO2020258484A1 PCT/CN2019/102516 CN2019102516W WO2020258484A1 WO 2020258484 A1 WO2020258484 A1 WO 2020258484A1 CN 2019102516 W CN2019102516 W CN 2019102516W WO 2020258484 A1 WO2020258484 A1 WO 2020258484A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
emitting device
light emitting
organic light
columnar
Prior art date
Application number
PCT/CN2019/102516
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English (en)
Chinese (zh)
Inventor
聂诚磊
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020258484A1 publication Critical patent/WO2020258484A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • This application relates to the field of display technology, in particular to an array substrate and a preparation method thereof.
  • OLED Organic Light Emitting Diode
  • RGB red, green and blue
  • IJP ink jet printing
  • the white light OLED display has the advantages of lower cost and less manufacturing difficulty. However, it still has some problems, that is, when a sub-pixel is lit, due to the existence of the OLED lateral leakage current, charge crosstalk (crosstalk) is formed. phenomenon.
  • the prior art display panel has the phenomenon of charge crosstalk.
  • the present application provides an array substrate and a preparation method thereof to solve the problem of charge crosstalk in a display panel.
  • an array substrate which includes:
  • the organic photoresist layer covers the pixel unit
  • a plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
  • the columnar layer is arranged on the organic photoresist layer and is located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses, and the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle ;
  • the organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a fractured state;
  • a cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  • the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
  • the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
  • the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
  • the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
  • an array substrate which includes:
  • the organic photoresist layer covers the pixel unit
  • a plurality of electrode layers are arranged on the organic photoresist layer and arranged at intervals;
  • a columnar layer disposed on the organic photoresist layer and located between the adjacent electrode layers, the columnar layer and the electrode layer have different film thicknesses;
  • the organic light emitting device layer is arranged on the columnar layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the columnar layer includes an inverted trapezoid or a rectangle.
  • the array substrate further includes a cathode layer, the cathode layer is disposed on the organic light emitting device layer, and the cathode layer on the columnar layer and the cathode layer on the electrode layer are in a broken state.
  • the longitudinal cross-sectional shape of the cathode layer includes any one of a regular trapezoid, a triangle, or a rectangle.
  • the width of the electrode layer is greater than the width of the organic light emitting device layer on the electrode layer, and the width of the organic light emitting device layer is greater than that of the cathode layer on the organic light emitting device layer. width.
  • the height of the columnar layer is greater than the height of the electrode layer, or the height of the columnar layer is greater than the total height of the electrode layer, the organic light emitting device layer and the cathode layer.
  • the material of the columnar layer includes one or more combinations of lithium oxide, copper phthalocyanide, and manganese oxide; the material of the electrode layer includes graphene or indium tin oxide.
  • the organic photoresist layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are stacked in sequence.
  • the present application also provides a method for manufacturing an array substrate, the method including:
  • a plurality of electrode layers arranged at intervals are vapor-deposited on the organic photoresist layer
  • a columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
  • An organic light emitting device layer is vapor-deposited on the organic photoresist layer and the electrode layer, and the organic light emitting device layer on the columnar layer and the organic light emitting device layer on the electrode layer are in a broken state.
  • the preparation method further includes:
  • a cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
  • the beneficial effect of the present application is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.
  • FIG. 1 is a schematic top view of an array substrate provided by an embodiment of the application.
  • FIG. 2 is a schematic cross-sectional view of an array substrate provided by an embodiment of the application.
  • FIG. 3 is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application.
  • FIG. 4 is a flowchart of a method of an array substrate provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of the vapor deposition angle of the array substrate provided by the embodiment of the application.
  • the embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device, which are used to improve or eliminate the influence of feedthrough voltage, thereby improving the flicker problem of the display screen and improving the display quality of the liquid crystal display panel.
  • FIG. 1 is a schematic top view of an array substrate provided by an embodiment of the application.
  • the pixel includes a plurality of pixel units 101, and the pixel unit 101 may be a pixel unit of any color of red/green/blue/white.
  • the pixel unit 101 includes a red color.
  • the pixel units 101 of the four colors cooperate with each other, so that the display panel including the array substrate presents a color image.
  • the pixel unit 101 is placed on the organic photoresist layer 102 of the array substrate, and one side of the organic photoresist layer 102 is provided with a columnar layer 104.
  • the height of the columnar layer 104 is much higher than the height of the pixel unit 101, thereby reducing the lateral propagation path of the cathode layer (not shown in the figure) in the array substrate, thereby reducing the phenomenon of charge crosstalk.
  • A-A' represents the cross-cut line of the array substrate
  • B-B' represents the cross-cut line of the array substrate
  • the following is a cross-sectional view formed by cutting along A-A' and along B-B' Cut to form a longitudinal section for specific analysis.
  • FIG. 2 is a cross section of an array substrate provided by an embodiment of the application.
  • the array substrate includes: a plurality of pixel units 101;
  • the organic photoresist layer 102 covers the pixel unit 101;
  • a plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals;
  • the columnar layer 104 is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103, and the columnar layer 104 and the electrode layer 103 have different film thicknesses;
  • the organic light emitting device layer 105 is disposed on the columnar layer 104 and the electrode layer 103, and the organic light emitting device layer 105 on the columnar layer 105 and the organic light emitting device layer 105 on the electrode layer 103 are broken status.
  • the material of the columnar layer 104 includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx); the material of the electrode layer 103 includes graphene or indium tin oxide ( Indium tin oxide, ITO).
  • the longitudinal cross-sectional shape of the columnar layer 104 includes an inverted trapezoid or a rectangle.
  • the shape of the columnar layer 104 is approximately an inverted trapezoid.
  • the two sides of the lower end of the columnar layer 104 are embedded between the organic photoresist layer 102 and the electrode layer 103, making the columnar
  • the layer 104 and the electrode layer 103 have a partial overlap area to ensure that when the array substrate lights up a single pixel unit, current will pass from the columnar layer 104 to another pixel unit.
  • the inverted trapezoidal shape of the columnar layer 104 increases the distance between the two electrode layers 103, thereby improving the light leakage phenomenon caused by the excessively large gap between the two electrode layers 103 to a certain extent.
  • the array substrate also includes a cathode layer 106, the cathode layer 106 is disposed on the organic light emitting device layer 105, the cathode layer 106 on the columnar layer 104 and the electrode layer 103 The cathode layer 106 is in a broken state.
  • the material of the cathode layer 106 may be the same as the material of the electrode layer 103, and the material of the cathode layer 106 includes graphene or indium tin oxide (Indium tin oxide). tin oxide, ITO).
  • the longitudinal cross-sectional shape of the columnar layer 104 described above includes an inverted trapezoid or a rectangle.
  • the longitudinal cross-sectional shape of the cathode layer 106 includes a regular trapezoid, a triangle, or Any of the rectangles.
  • the cathode layer 106 includes the cathode layer above the columnar layer 104 or includes the cathode layer 104 above the electrode layer 103.
  • the slope of the slit formed between the columnar layer 104 and the cathode layer is parallel, because the slit is small. , Thereby improving the light leakage phenomenon of the array substrate.
  • the cathode layer 106 and the electrode layer 103 in the array substrate it is necessary to adjust when the cathode layer 106 and the electrode layer 103 are evaporated.
  • the vapor deposition angle of the two layers That is, along the longitudinal section direction of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light emitting device layer 105 on the electrode layer 103, and the width of the organic light emitting device layer 105 is greater than that of the organic light emitting device layer 105 The width of the upper cathode layer 106.
  • This structure makes the electrode layer 103, the organic light-emitting device layer 102 and the cathode layer 106 on the pixel unit form a slope similar to "mountain", so that the electrode layer 103 at the lower end of the slope is in contact with the columnar layer 104 while the The cathode layer 106 does not contact the columnar layer 104 and the organic light emitting device 105 above the columnar layer 104 and the cathode layer 106, thereby preventing a short circuit between the cathode layer 106 and the electrode layer 103, and intercepting the organic light emitting device layer in the array substrate.
  • the transverse current propagation path between 105 can effectively reduce the phenomenon of charge crosstalk.
  • the height of the columnar layer 104 is greater than the height of the electrode layer 103, or the height of the columnar layer 104 is greater than the height of the electrode layer 104, the organic light emitting device layer 105, and the cathode layer 106 sum.
  • the cathode layer 106 on the columnar layer 104 and the cathode layer 106 on the electrode layer 103 are not on the same horizontal plane, thereby blocking the array substrate.
  • the lateral current propagation path between the organic light emitting device layers 105 when the height of the columnar layer 104 is greater than the sum of the heights of the electrode layer 104, the organic light-emitting device layer 105 and the cathode layer 106, that is, in FIG.
  • the cathode layer 106 above the columnar layer 104 The cathode layer 106, which is much higher than the electrode layer 103, cuts off the lateral current propagation path between the organic light emitting device layers 105 in the array substrate and reduces the phenomenon of charge crosstalk.
  • the material of the organic photoresist layer 102 may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (HTL), Organic Emitting Material Layer (EML), Electron Transport Layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
  • HIL hole injection layer
  • HTL Hole Transport Layer
  • EML Organic Emitting Material Layer
  • EHL Electron Transport Layer
  • EIL Electron Transport Layer
  • EIL Electron Transport Layer
  • EIL Electron Transport Layer
  • FIG. 3 is a schematic longitudinal cross-sectional view of an array substrate provided by an embodiment of the application.
  • the array substrate includes: a plurality of pixel units 101;
  • the organic photoresist layer 102 covers the pixel unit 101;
  • a plurality of electrode layers 103 are arranged on the organic photoresist layer 102 and arranged at intervals. In FIG. 3, the number of electrode layers 103 is one;
  • the organic light emitting device layer 105 is disposed on the electrode layer 103.
  • the cathode layer 106 is disposed on the organic light emitting device layer 105.
  • the columnar layer 104 is not shown in the figure, which is disposed on the organic photoresist layer 102 and is located between the adjacent electrode layers 103.
  • the columnar layer 104 and the electrode layer 103 have different films. Thick height, as can be seen from Fig. 1, cutting along BB', the columnar layer 104 does not appear in the longitudinal section, and the columnar layer is placed in front or behind the longitudinal section.
  • the electrode layer 103 serves as the anode in the array substrate
  • the cathode layer 106 serves as the cathode in the array substrate.
  • the organic light emitting device layer 105 is disposed between the electrode layer 103 and the cathode layer 106.
  • the anode material is generally indium tin oxide (ITO).
  • ITO indium tin oxide
  • Carrier injection is the passage of carriers
  • the process of entering the electrode layer 103/organic light emitting device 106 interface from the electrode layer 103 to the organic light emitting device layer 105. This process has a direct impact on the turn-on voltage, luminous efficiency, and working efficiency of the organic light-emitting device layer 105, which converts electrical energy into light energy, thereby causing the array substrate to emit light.
  • the present application also provides a method for manufacturing an array substrate, please refer to FIG. 4, the manufacturing method includes:
  • a columnar layer is vapor-deposited on the organic photoresist layer, the columnar layer is located between the adjacent electrode layers, and the columnar layer and the electrode layer have different film thicknesses;
  • step S50 it further includes:
  • a cathode layer is evaporated on the organic light emitting device layer, and the evaporation angle of the cathode layer is larger than the evaporation angle of the electrode layer and smaller than the evaporation angle of the organic light emitting device layer.
  • Fig. 5 a schematic diagram of the evaporation angle.
  • the ⁇ angle is the evaporation angle of the organic light-emitting device layer
  • the ⁇ angle is the evaporation angle of the cathode layer
  • the ⁇ angle must be greater than the ⁇ angle; this process
  • the process in FIG. 2 is: along the longitudinal section of the array substrate, the width of the electrode layer 103 is greater than the width of the organic light-emitting device layer 105 on the electrode layer 103, and the width of the organic light-emitting device layer 105 is greater than that of the The width of the cathode layer 106 on the organic light emitting device layer 105.
  • the material of the columnar layer includes one or more combinations of lithium oxide (Li2O), copper phthalocyanide (CuPc), and manganese oxide (OMOx);
  • the material of the electrode layer 103 includes graphene or Indium tin oxide (ITO);
  • the material of the cathode layer includes graphene or indium tin oxide (Indium tin oxide) tin oxide, ITO);
  • the material of the organic photoresist layer may specifically include a hole injection layer (Hole Inject Layer, HIL), Hole Transport Layer (Hole Transport Layer, HTL), organic light emitting layer (Emitting Material Layer, EML), electron transport layer (Electron Transport Layer, EHL) and electron injection layer (Electron Inject Layer, EIL).
  • an embodiment of the present application also provides a display panel, including the array substrate provided by any embodiment of the present invention.
  • an embodiment of the present application provides a display device, including: the liquid crystal display panel provided by any embodiment of the present invention.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the beneficial effect is that by disposing a columnar layer above the organic photoresist layer, the organic photoresist layer and the electrode layer above the electrode layer are broken, thereby reducing the lateral propagation path of the array substrate and reducing the phenomenon of charge crosstalk.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un substrat matriciel, comprenant : une pluralité d'unités de pixel ; une couche de résine photosensible organique recouvrant les unités de pixel ; une pluralité de couches d'électrode disposées sur la couche de résine photosensible organique et espacées les unes des autres ; une couche colonnaire disposée sur la couche de résine photosensible organique et située entre des couches adjacentes parmi les couches d'électrode, la couche colonnaire et les couches d'électrode ayant des épaisseurs et des hauteurs de film différentes ; et une couche de dispositif électroluminescent organique disposée sur la couche colonnaire et sur les couches d'électrode, la couche de dispositif électroluminescent organique située sur la couche colonnaire étant séparée de la couche de dispositif électroluminescent organique située sur les couches d'électrode.
PCT/CN2019/102516 2019-06-24 2019-08-26 Substrat matriciel et son procédé de préparation WO2020258484A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910547738.2 2019-06-24
CN201910547738.2A CN110212008B (zh) 2019-06-24 2019-06-24 阵列基板及其制备方法

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WO2020258484A1 true WO2020258484A1 (fr) 2020-12-30

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211985A (zh) * 2006-12-28 2008-07-02 三星Sdi株式会社 薄膜晶体管及其制造方法和有机发光二极管显示装置
CN101373793A (zh) * 2007-08-23 2009-02-25 三星Sdi株式会社 薄膜晶体管及其制造方法以及有机发光二极管显示装置
CN103022048A (zh) * 2012-12-12 2013-04-03 京东方科技集团股份有限公司 阵列基板及其制备方法、有机发光二极管显示装置
US20160148985A1 (en) * 2014-11-24 2016-05-26 Samsung Display Co., Ltd. Organic light emitting diode display
US9483150B2 (en) * 2013-03-11 2016-11-01 Tera Xtal Technology Corporation Touch sensor mechanism and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100442533C (zh) * 2002-06-25 2008-12-10 铼宝科技股份有限公司 全彩有机电致发光显示装置
KR102040896B1 (ko) * 2013-02-18 2019-11-06 삼성디스플레이 주식회사 유기전계발광 표시장치의 제조방법
CN107369702B (zh) * 2017-08-16 2020-03-17 武汉华星光电半导体显示技术有限公司 一种oled显示面板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211985A (zh) * 2006-12-28 2008-07-02 三星Sdi株式会社 薄膜晶体管及其制造方法和有机发光二极管显示装置
CN101373793A (zh) * 2007-08-23 2009-02-25 三星Sdi株式会社 薄膜晶体管及其制造方法以及有机发光二极管显示装置
CN103022048A (zh) * 2012-12-12 2013-04-03 京东方科技集团股份有限公司 阵列基板及其制备方法、有机发光二极管显示装置
US9483150B2 (en) * 2013-03-11 2016-11-01 Tera Xtal Technology Corporation Touch sensor mechanism and manufacturing method thereof
US20160148985A1 (en) * 2014-11-24 2016-05-26 Samsung Display Co., Ltd. Organic light emitting diode display

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CN110212008B (zh) 2021-07-23
CN110212008A (zh) 2019-09-06

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