CN110212008A - Array substrate and preparation method thereof - Google Patents
Array substrate and preparation method thereof Download PDFInfo
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- CN110212008A CN110212008A CN201910547738.2A CN201910547738A CN110212008A CN 110212008 A CN110212008 A CN 110212008A CN 201910547738 A CN201910547738 A CN 201910547738A CN 110212008 A CN110212008 A CN 110212008A
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- layer
- prismatic
- array substrate
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- luminescent device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Abstract
This application provides a kind of array substrates, including multiple pixel units, organic photoresist layer, are covered in the pixel unit；Multiple electrodes layer is set on organic photoresist layer and is spaced setting；Prismatic layer is set on organic photoresist layer and between the adjacent electrode layer, and the prismatic layer and the electrode layer have different film thickness height；Organic luminescent device layer is set on the prismatic layer and electrode layer, and the organic luminescent device layer on the organic luminescent device and the electrode layer on the prismatic layer is in breaking state.The utility model has the advantages that by the way that prismatic layer is arranged above organic photoresist layer, so that the electrode fault rupture above organic photoresist layer and electrode layer, the phenomenon that reducing the lateral route of transmission of array substrate, reduce charge crosstalk.
Description
Technical field
This application involves field of display technology more particularly to a kind of array substrate and preparation method thereof.
Background technique
Current Organic Light Emitting Diode (Organic Light Emitting Diode, abbreviation OLED) display, is pressed
It is divided into RGB (RGB) vapor deposition, white light OLED and inkjet printing (InkJet according to the plated film mode of OLED display
Printing, IJP) technology.
Wherein white light OLED, which is shown, has many advantages, such as that cost is relatively low, and manufacture difficulty is smaller, but it remains on that there are some
Problem, that is, when lighting a sub-pixel, due to the presence of OLED transverse direction leakage current, and form charge crosstalk
(crosstalk) phenomenon.
In conclusion the display panel of prior art the phenomenon that there are charge crosstalks.
Summary of the invention
Array substrate provided by the present application solves display by the way that prismatic layer is arranged above organic photoresist layer and electrode layer
Panel the phenomenon that there are charge crosstalks.
Technical solution provided by the present application is as follows:
A kind of array substrate, comprising:
Multiple pixel units；
Organic photoresist layer is covered in the pixel unit；
Multiple electrodes layer is set on organic photoresist layer and is spaced setting；
Prismatic layer is set on organic photoresist layer and between the adjacent electrode layer, the prismatic layer and institute
Electrode layer is stated with different film thickness height；
Organic luminescent device layer is set on the prismatic layer and electrode layer, the organic light emission on the prismatic layer
The organic luminescent device layer on device layer and the electrode layer is in breaking state.
In array substrate provided herein, the prismatic layer vertical sectional shape includes inverted trapezoidal or rectangle.
In array substrate provided herein, the array substrate further includes cathode layer, and the cathode layer is set to
On the organic luminescent device layer, the cathode layer on the cathode layer and the electrode layer on the prismatic layer is in fracture
State.
In array substrate provided herein, the vertical sectional shape of the cathode layer include trapezoid, triangle or
Any one in person's rectangle.
In array substrate provided herein, along array substrate longitudinal section direction, the electrode layer width is big
It is greater than the organic light emission in the width of the width of the organic luminescent device layer on the electrode layer, the organic luminescent device layer
The width of cathode layer on device layer.
In array substrate provided herein, the height of the prismatic layer is greater than the height of the electrode layer, alternatively,
The height of the prismatic layer is greater than the height summation of the electrode layer, the organic luminescent device layer and the cathode layer.
In array substrate provided herein, the material of the prismatic layer includes lithia, phthalein cyanogen copper, manganese oxide
One or more combination；The material of the electrode layer includes graphene or indium tin oxide.
In array substrate provided herein, organic photoresist layer includes the hole injection being cascading
Layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
The application also provides a kind of preparation method of array substrate, which comprises
Form multiple pixel units；
Organic photoresist layer is formed on the multiple thin film transistor (TFT)；
Multiple spaced electrode layers are deposited on organic photoresist layer；
Prismatic layer is deposited on organic photoresist layer, the prismatic layer is between the adjacent electrode layer, the column
Shape layer and the electrode layer have different film thickness height；
Organic light emitting device layer is deposited on organic photoresist layer and the electrode layer, described on the prismatic layer has
The organic luminescent device layer on machine light emitting device layer and the electrode layer is in breaking state.
In a kind of preparation method of array substrate provided by the present application, on organic photoresist layer and the electrode layer
It is deposited after organic light emitting device layer, the preparation method further include:
The deposition angles of the evaporation cathode layer on the organic luminescent device layer, the cathode layer are greater than the electrode layer
Deposition angles, and it is less than the deposition angles of the organic luminescent device layer.
The application's has the beneficial effect that by the way that prismatic layer is arranged above organic photoresist layer, so that organic photoresist layer and electricity
The electrode fault rupture of pole layer top, the phenomenon that reducing the lateral route of transmission of array substrate, reduce charge crosstalk.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the schematic top plan view of array substrate provided by the embodiments of the present application.
Fig. 2 is the cross-sectional view of array substrate provided by the embodiment of the present application.
Fig. 3 is the Longitudinal cross section schematic of array substrate provided by the embodiment of the present application.
Fig. 4 is the method flow diagram of array substrate provided by the embodiment of the present application.
Fig. 5 is the deposition angles schematic diagram of array substrate provided by the embodiment of the present application.
Specific embodiment
The embodiment of the invention provides a kind of array substrate, liquid crystal display panel and display devices, to improve or eliminate
The influence of feed-trough voltage promotes the display quality of liquid crystal display panel so as to improve display film flicker problem.
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
It should be noted that the thickness of each layer and shape do not reflect actual proportions in attached drawing of the present invention, purpose is only illustrated
Illustrate the embodiment of the present application content.
Referring to Figure 1, which is the schematic top plan view of array substrate provided by the embodiment of the present application.In Fig. 1, institute
Stating pixel includes multiple pixel units 101, and pixel unit 101 can be the pixel unit of any one red green blue/white color,
Wherein, in the Fig. 1, which includes red pixel cell 1011, green pixel cell 1012, blue pixel list
Member 1013 and white pixel unit 1014.The pixel unit 101 of four kinds of colors cooperates, so that including the array substrate
Display panel shows colour picture.The pixel unit 101 is placed in organic photoresist layer 102 of array substrate, organic photoresist layer
102 side is equipped with prismatic layer 104.The height of the prismatic layer 104 is significantly larger than the height of pixel unit 101, is reduced with this
The lateral route of transmission of cathode layer (not shown) in array substrate, and then the phenomenon that reduction charge crosstalk.
In Fig. 1, A-A ' indicates that the traverse of the array substrate, B-B ' indicate the traverse of the array substrate, below
It forms longitudinal section according to the cross-sectional view 2 formed along A-A ' cutting and is made a concrete analysis of with being cut along B-B '.
Fig. 2 is referred to, which is the cross section of array substrate provided by the embodiment of the present application.The array substrate packet
It includes: multiple pixel units 101；
Organic photoresist layer 102 is covered in the pixel unit 101；
Multiple electrodes layer 103 is set on organic photoresist layer 102 and is spaced setting；
Prismatic layer 104, is set on organic photoresist layer 102 and between the adjacent electrode layer 103, the column
Shape layer 104 and the electrode layer 103 have different film thickness height；
Organic luminescent device layer 105 is set on the prismatic layer 104 and electrode layer 103, on the prismatic layer 105
The organic luminescent device layer 105 on the organic luminescent device layer 105 and the electrode layer 103 is in breaking state.
The material of the prismatic layer 104 include lithia (Li2O), phthalein cyanogen copper (CuPc), manganese oxide (OMOx) one kind or
Person's multiple combinations；The material of the electrode layer 103 includes graphene or indium tin oxide (Indium tin oxide, ITO).
Further, 104 vertical sectional shape of prismatic layer includes inverted trapezoidal or rectangle.In the present embodiment, the column
The shape of shape layer 104 is approximately inverted trapezoidal, and by taking the Fig. 2 as an example, the two sides of the lower end of the prismatic layer 104 are embedded in organic photoresist layer
Between 102 and electrode layer 103, the prismatic layer 104 and the electrode layer 103 overlap region, it is ensured that array substrate is being lighted
When single pixel unit, electric current can reach one other pixel unit from prismatic layer 104.In addition to this, the shape of the inverted trapezoidal
Prismatic layer 104 increases the distance between two electrode layers 103, and then is improved between two electrode layers 103 to a certain extent
Gap it is excessive and generate light leakage phenomena.
In addition to this, which further includes cathode layer 106, and the cathode layer 106 is set to the organic illuminator
On part layer 105, the cathode layer 106 on the cathode layer 106 and the electrode layer 103 on the prismatic layer 104 is in disconnected
Split state.
Further, the material of the cathode layer 106 can be identical with the material of the electrode layer 103, the cathode layer
106 material includes graphene or indium tin oxide (Indium tin oxide, ITO).
It should be pointed out that it is above-mentioned it is stated that 104 vertical sectional shape of prismatic layer includes inverted trapezoidal or rectangle, in order to
So that prismatic layer 104 is embedded in the array substrate, then the vertical sectional shape of the cathode layer 106 include trapezoid, triangle or
Any one in person's rectangle.In the present embodiment, which includes the cathode layer of 104 top of prismatic layer, or including
The cathode layer 104 of 103 top of electrode layer.For example, when the shape of the cathode layer 106 is trapezoid, the shape of the prismatic layer 104
Shape is inverted trapezoidal, then the gradient of the slit formed between the prismatic layer 104 and the cathode layer be it is parallel, since slit is small, into
And improve the light leakage phenomena of the array substrate.
Further, in the embodiment of the present application, especially in the process flow of this array substrate, the array substrate is prevented
With electrode layer 103 short circuit occurs for middle cathode layer 106, needs to adjust this two layers when the cathode layer 106 and electrode layer 103 is deposited
Deposition angles.That is, 103 width of electrode layer is greater than on the electrode layer 103 along array substrate longitudinal section direction
The width of the width of organic luminescent device layer 105, the organic luminescent device layer 105 is greater than the organic luminescent device layer 105
On cathode layer 106 width.This structure makes the electrode layer 103, organic luminescent device layer 102 and yin on the pixel unit
Pole layer 106 forms the gradient for being similar to " mountain " word, so that the electrode layer 103 of the gradient lower end is in contact prismatic layer 104
Meanwhile the cathode layer 106 does not contact the organic luminescent device 105 and cathode layer 106 of the prismatic layer 104 and 104 or more prismatic layer,
And then prevent and short circuit occurs between cathode layer 106 and the electrode layer 103, organic luminescent device layer in the array substrate has been truncated
Transverse current route of transmission between 105, the phenomenon that charge crosstalk can be effectively reduced.
Further, the height of the prismatic layer 104 is greater than the height of the electrode layer 103, alternatively, the prismatic layer
104 height is greater than the height summation of the electrode layer 104, the organic luminescent device layer 105 and the cathode layer 106.
For example, the yin when the height of the prismatic layer 104 is greater than the height of the electrode layer 103, on the prismatic layer 104
Organic hair in the array substrate has been truncated not in same level in cathode layer 106 on pole layer 106 and the electrode layer 103
Transverse current route of transmission between optical device layer 105.For example, when the height of the prismatic layer 104 is greater than the electrode layer
104, when the height summation of the organic luminescent device layer 105 and the cathode layer 106, i.e. in the Fig. 2, on the prismatic layer 104
The cathode layer 106 of side is significantly larger than the cathode layer 106 of 103 top of electrode layer, and organic illuminator in the array substrate has been truncated
The phenomenon that transverse current route of transmission between part layer 105, reduction charge crosstalk.
In some embodiments, the material of organic photoresist layer 102 specifically may include hole injection layer (Hole Inject
Layer, HIL), hole transmission layer (Hole Transport Layer, HTL), organic luminous layer (Emitting Material
Layer, EML), electron transfer layer (Electron Transport Layer, EHL) and electron injecting layer (Electron
Inject Layer, EIL).
Fig. 3 is referred to, which is the Longitudinal cross section schematic of array substrate provided by the embodiment of the present application.The array
Substrate includes: multiple pixel units 101；
Organic photoresist layer 102 is covered in the pixel unit 101；
Multiple electrodes layer 103 is set on organic photoresist layer 102 and is spaced setting, in this Fig. 3, the electrode layer
103 quantity is one；
Organic luminescent device layer 105 is set on electrode layer 103.
Cathode layer 106, the cathode layer 106 are set on the organic luminescent device layer 105.
It should be pointed out that prismatic layer 104 is not shown in the figure, be set on organic photoresist layer 102 and is located at adjacent
Between the electrode layer 103, the prismatic layer 104 and the electrode layer 103 have different film thickness height, as shown in Figure 1, along B-
B ' cutting, the prismatic layer 104 do not appear in the longitudinal section, which is placed on the front or behind of the longitudinal section.
Further, in the Fig. 3, the electrode layer 103 is as the anode in the array substrate, the cathode layer 106
As the cathode in the array substrate.The organic luminescent device layer 105 is set to the electrode layer 103 and the cathode layer 106
Between.In the processing procedure of the array substrate, since the process temperatures of organic luminescent device are low, so that anode material generally aoxidizes
Indium-tin oxide glass electrode (Indium tin oxide, ITO).When array substrate is under electric field action, the organic luminescent device
The electrons and holes of layer 105 abut organic photoresist layer 102. of electrode layer 103 from cathode layer 106 and the injection of electrode layer 103 respectively
Carrier injection, which is carrier, enters organic light emission from electrode layer 103 by 103/ organic luminescent device of electrode layer, 106 interface
The process of device layer 105.This process has open bright voltage, luminous efficiency and the working efficiency of organic luminescent device layer 105
It directly affects, converts electric energy to luminous energy in the organic luminescent device layer 105, so that the array substrate shines.
By the Fig. 3 it is found that the array substrate increases prismatic layer 104, the still normal work of the longitudinal current in the array substrate
Make, solves the charge crosstalk phenomenon of transverse current, have not been changed the height of the array substrate.
The application also provides a kind of preparation method of array substrate, refers to Fig. 4, which includes:
S 10, multiple pixel units are formed；
S20, organic photoresist layer is formed on the multiple thin film transistor (TFT)；
S30, multiple spaced electrode layers are deposited on organic photoresist layer；
S40, prismatic layer is deposited on organic photoresist layer, the prismatic layer is between the adjacent electrode layer, institute
Stating prismatic layer and the electrode layer has different film thickness height；
S50, organic light emitting device layer is deposited on organic photoresist layer and the electrode layer, the institute on the prismatic layer
The organic luminescent device layer on organic luminescent device layer and the electrode layer is stated in breaking state.
Further, after step S50 further include:
The deposition angles of the evaporation cathode layer on the organic luminescent device layer, the cathode layer are greater than the electrode layer
Deposition angles, and it is less than the deposition angles of the organic luminescent device layer.
The deposition angles schematic diagram refers to Fig. 5, and in the Fig. 5, wherein the angle α is the vapor deposition angle of organic luminescent device layer, β
Angle is the vapor deposition angle of cathode layer；Wherein, the angle α need to be greater than the angle β；The process flow is in Fig. 2 are as follows: along the array substrate longitudinal section
Direction, 103 width of electrode layer are greater than the width of the organic luminescent device layer 105 on the electrode layer 103, organic hair
The width of optical device layer 105 is greater than the width of the cathode layer 106 on the organic luminescent device layer 105.
In some embodiments, the material of the prismatic layer includes lithia (Li2O), phthalein cyanogen copper (CuPc), manganese oxide
(OMOx) one or more kinds of combinations；The material of the electrode layer 103 includes graphene or indium tin oxide (Indium
Tin oxide, ITO)；The material of the cathode layer include graphene or indium tin oxide (Indium tin oxide,
ITO)；The material of organic photoresist layer specifically may include hole injection layer (Hole Inject Layer, HIL), hole transmission layer
(Hole Transport Layer, HTL), organic luminous layer (Emitting Material Layer, EML), electron transfer layer
(Electron Transport Layer, EHL) and electron injecting layer (Electron Inject Layer, EIL).
Conceived based on same application, the embodiment of the present application also provides a kind of display panels, including any implementation of the present invention
The array substrate that example provides.
Conceived based on same application, the embodiment of the present application provides a kind of display device, comprising: any embodiment of that present invention
The liquid crystal display panel of offer.The display device can be with are as follows: mobile phone, tablet computer, television set, display, laptop, number
Any products or components having a display function such as code photo frame, navigator.
It has the beneficial effect that by the way that prismatic layer is arranged above organic photoresist layer, so that above organic photoresist layer and electrode layer
Electrode fault rupture, the phenomenon that reducing the lateral route of transmission of array substrate, reduce charge crosstalk.
In addition to the implementation, the application can also have other embodiments.It is all to use equivalent replacement or equivalence replacement shape
At technical solution, all fall within this application claims protection scope.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above by preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of array substrate, which is characterized in that the array substrate includes:
Multiple pixel units；
Organic photoresist layer is covered in the pixel unit；
Multiple electrodes layer is set on organic photoresist layer and is spaced setting；
Prismatic layer is set on organic photoresist layer and between the adjacent electrode layer, the prismatic layer and the electricity
Pole layer has different film thickness height；
Organic luminescent device layer is set on the prismatic layer and electrode layer, the organic luminescent device on the prismatic layer
The organic luminescent device layer on layer and the electrode layer is in breaking state.
2. array substrate according to claim 1, which is characterized in that the prismatic layer vertical sectional shape include inverted trapezoidal or
Person's rectangle.
3. array substrate according to claim 1, which is characterized in that the array substrate further includes cathode layer, the yin
Pole layer is set on the organic luminescent device layer, the yin on the cathode layer and the electrode layer on the prismatic layer
Pole layer is in breaking state.
4. array substrate according to claim 3, which is characterized in that the vertical sectional shape of the cathode layer includes positive ladder
Any one in shape, triangle or rectangle.
5. array substrate according to claim 3, which is characterized in that along array substrate longitudinal section direction, the electricity
Pole slice width degree is greater than the width of the organic luminescent device layer on the electrode layer, and the width of the organic luminescent device layer is greater than institute
State the width of the cathode layer on organic luminescent device layer.
6. array substrate according to claim 3, which is characterized in that the height of the prismatic layer is greater than the electrode layer
Highly, alternatively, the height of the prismatic layer is greater than the height of the electrode layer, the organic luminescent device layer and the cathode layer
Summation.
7. array substrate according to claim 1, which is characterized in that the material of the prismatic layer includes lithia, phthalein cyanogen
One or more kinds of combinations of copper, manganese oxide；The material of the electrode layer includes graphene or indium tin oxide.
8. array substrate according to claim 1, which is characterized in that organic photoresist layer includes being cascading
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
9. a kind of preparation method of array substrate, which is characterized in that the described method includes:
Form multiple pixel units；
Organic photoresist layer is formed on the multiple thin film transistor (TFT)；
Multiple spaced electrode layers are deposited on organic photoresist layer；
Prismatic layer is deposited on organic photoresist layer, the prismatic layer is between the adjacent electrode layer, the prismatic layer
There are different film thickness height with the electrode layer；
Organic light emitting device layer is deposited on organic photoresist layer and the electrode layer, organic hair on the prismatic layer
The organic luminescent device layer in optical device layer and the electrode layer is in breaking state.
10. the preparation method of array substrate according to claim 9, which is characterized in that in organic photoresist layer and institute
It states and is deposited on electrode layer after organic light emitting device layer, the preparation method further include:
The evaporation cathode layer on the organic luminescent device layer, the deposition angles of the cathode layer are greater than the vapor deposition of the electrode layer
Angle, and it is less than the deposition angles of the organic luminescent device layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910547738.2A CN110212008B (en) | 2019-06-24 | 2019-06-24 | Array substrate and preparation method thereof |
| PCT/CN2019/102516 WO2020258484A1 (en) | 2019-06-24 | 2019-08-26 | Array substrate and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910547738.2A CN110212008B (en) | 2019-06-24 | 2019-06-24 | Array substrate and preparation method thereof |
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| CN110212008A true CN110212008A (en) | 2019-09-06 |
| CN110212008B CN110212008B (en) | 2021-07-23 |
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| CN201910547738.2A Active CN110212008B (en) | 2019-06-24 | 2019-06-24 | Array substrate and preparation method thereof |
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| WO (1) | WO2020258484A1 (en) |
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| CN1466405A (en) * | 2002-06-25 | 2004-01-07 | 铼宝科技股份有限公司 | Full color organic electrouminescent display device |
| CN103022048A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light emitting diode display device |
| US20140235004A1 (en) * | 2013-02-18 | 2014-08-21 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display |
| CN107369702A (en) * | 2017-08-16 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100864884B1 (en) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | Thin film transistor, fabricating for the same and organic light emitting diode device display comprising the same |
| KR100889627B1 (en) * | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating method for the same, and organic light emitting diode display device comprising the same |
| US9483150B2 (en) * | 2013-03-11 | 2016-11-01 | Tera Xtal Technology Corporation | Touch sensor mechanism and manufacturing method thereof |
| KR102354377B1 (en) * | 2014-11-24 | 2022-01-21 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
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2019
- 2019-06-24 CN CN201910547738.2A patent/CN110212008B/en active Active
- 2019-08-26 WO PCT/CN2019/102516 patent/WO2020258484A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466405A (en) * | 2002-06-25 | 2004-01-07 | 铼宝科技股份有限公司 | Full color organic electrouminescent display device |
| CN103022048A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light emitting diode display device |
| US20140235004A1 (en) * | 2013-02-18 | 2014-08-21 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display |
| CN107369702A (en) * | 2017-08-16 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| WO2020258484A1 (en) | 2020-12-30 |
| CN110212008B (en) | 2021-07-23 |
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