CN108288639B - Display panel, detection method and manufacturing method thereof and display device - Google Patents
Display panel, detection method and manufacturing method thereof and display device Download PDFInfo
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- CN108288639B CN108288639B CN201810076498.8A CN201810076498A CN108288639B CN 108288639 B CN108288639 B CN 108288639B CN 201810076498 A CN201810076498 A CN 201810076498A CN 108288639 B CN108288639 B CN 108288639B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The invention discloses a display panel, a manufacturing method thereof and a display device, wherein the display panel comprises: the pixel array comprises a substrate base plate, a plurality of pixels and a detection circuit, wherein the plurality of pixels are arranged on the substrate base plate in an array manner; wherein each pixel comprises a plurality of sub-pixels; a sub-pixel comprising: the infrared detection unit is positioned on the substrate base plate, and the light-emitting unit is positioned on one side, away from the substrate base plate, of the infrared detection unit; a light emitting unit comprising: the display device comprises a first electrode positioned on a substrate, a second electrode positioned on one side of the first electrode, which is far away from the substrate, and a display light-emitting part and an infrared light-emitting part which are positioned between the first electrode and the second electrode and are stacked; the detection circuit is electrically connected with each infrared detection unit and used for judging the touch position according to the photocurrent signal of each infrared detection unit. According to the display panel provided by the embodiment of the invention, the infrared detection unit and the infrared light emitting part do not occupy the aperture opening ratio of the pixel, and the resolution of the display screen is improved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a display panel, a manufacturing method thereof, and a display device.
Background
The Organic Light-Emitting Diode (OLED) display panel has excellent characteristics of high contrast, wide color gamut, fast response speed, flexibility, etc., and thus arouses the enthusiasm of commercial production in the flat panel industry, and becomes the most promising competitor in future display technologies. Among them, an Active-matrix organic light emitting diode (AMOLED) display panel is widely used.
With the gradual maturity of organic electroluminescent (OLED) display panel technology and the synchronous development of embedded technology of touch screen sensing layer and AMOLED integration, the AMOLED screen based On the On-cell touch technology has been commercialized, and is beginning to be applied to the public service field and personal entertainment equipment, and the AMOLED screen based On the In-cell touch technology also becomes the target of vigorous development of various manufacturers.
As shown in fig. 1, in the prior art, in the in-cell AMOLED display panel, each pixel 10 includes: the display panel comprises a red (R) sub-pixel 101, a green (G) sub-pixel 102, a blue (B) sub-pixel 103, an Infrared (IR) light-emitting unit 104 and an infrared photosensitive detection (IR sensor) unit 105, wherein light emitted by the infrared light-emitting unit 104 is reflected by the touch of a finger or a palm of a user, and is detected by the infrared photosensitive detection unit 105 to locate the touch position of the user, so that the touch and display functions are realized, but the infrared light-emitting unit 104 and the infrared photosensitive detection unit 105 occupy the aperture ratio of the pixel 10, so that the resolution of the display panel is low.
Disclosure of Invention
The embodiment of the invention provides a display panel, a manufacturing method thereof and a display device, which are used for solving the problem that in the prior art, due to the fact that an infrared light emitting part and an infrared photosensitive detection unit occupy the aperture opening ratio of pixels, the resolution ratio of the display panel is low.
In a first aspect, an embodiment of the present invention provides a display panel, including: the pixel array comprises a substrate base plate, a plurality of pixels and a detection circuit, wherein the plurality of pixels are arranged on the substrate base plate in an array; wherein the content of the first and second substances,
each of the pixels includes a plurality of sub-pixels; the sub-pixel includes: the infrared detection unit is positioned on the substrate base plate, and the light-emitting unit is positioned on one side, away from the substrate base plate, of the infrared detection unit;
the light emitting unit includes: the display device comprises a substrate, a first electrode, a second electrode, a display light-emitting part and an infrared light-emitting part, wherein the first electrode is positioned on the substrate, the second electrode is positioned on one side, away from the substrate, of the first electrode, and the display light-emitting part and the infrared light-emitting part are positioned between the first electrode and the second electrode and are arranged in a stacked mode;
the detection circuit is electrically connected with each infrared detection unit and used for judging a touch position according to the photocurrent signal of each infrared detection unit.
In a possible implementation manner, in the display panel provided in the embodiment of the present invention, the sub-pixel further includes: the reflecting layer is positioned on one side of the infrared detection unit close to the substrate base plate;
the infrared detection unit is at least partially overlapped with the orthographic projection of the reflecting layer on the substrate base plate.
In a possible implementation manner, in the display panel provided in the embodiment of the present invention, the sub-pixel further includes: the insulating medium layer is positioned between the first electrode and the infrared detection unit;
in each pixel, the thicknesses of the insulating medium layers corresponding to the sub-pixels are different.
In a possible implementation manner, in the display panel provided in the embodiment of the present invention, in each of the pixels, a thickness of the insulating medium layer increases with an increase in a wavelength of the light emitted from the corresponding sub-pixel.
In a possible implementation manner, in the display panel provided in the embodiment of the present invention, the light emitting unit further includes: and a charge generation layer located between the display light-emitting portion and the infrared light-emitting portion.
In a possible implementation manner, in the display panel provided in an embodiment of the present invention, the infrared detection unit includes: the infrared photosensitive layer is positioned between the third electrode and the fourth electrode;
the sub-pixel further comprises a read transistor electrically connected to the fourth electrode; and the detection circuit reads the corresponding photocurrent signal of the infrared detection unit through the reading transistor.
In a possible implementation manner, in the display panel provided in the embodiment of the present invention, the detection circuit is specifically configured to:
acquiring photocurrent signals of the infrared detection units through the reading transistors;
comparing the photocurrent signal of each infrared detection unit with a preset threshold value, and if the photocurrent signal greater than the preset threshold value exists, determining the position of the corresponding sub-pixel as a pre-judgment touch position;
judging whether the photocurrent signal corresponding to the pre-determined touch position comprises biological characteristic information; if so, triggering the corresponding touch operation, otherwise, not triggering the touch operation.
In a second aspect, an embodiment of the present invention provides a method for manufacturing the display panel, including:
forming each infrared detection unit on a substrate;
forming a pattern of an insulating medium layer on the film layer where the infrared detection unit is located;
forming first electrodes on the insulating medium layer;
forming each display light-emitting part and each infrared light-emitting part on the film layer on which the first electrode is positioned respectively, wherein the film layer on which the display light-emitting parts are positioned and the film layer on which the infrared light-emitting parts are positioned are arranged in a laminated manner;
second electrodes are formed on the display light-emitting portions and the infrared light-emitting portions.
In a possible implementation manner, in the manufacturing method provided by the embodiment of the present invention, each of the pixels includes three sub-pixels; the thickness of the insulating medium layer corresponding to each sub-pixel is d1、d2And d3And d is1＞d2＞d3；
The forming of the pattern of the insulating medium layer on the film layer where the infrared detection unit is located comprises the following steps:
forming an insulating medium layer with the thickness of d on the film layer where the infrared detection unit is located, and forming a photoresist layer on the insulating medium layer;
patterning the photoresist layer to obtain a photoresist complete reserved region, a first photoresist semi-reserved region, a second photoresist semi-reserved region and a photoresist complete removal region of the photoresist layer; the thickness of the photoresist layer in the first photoresist semi-reserved region is greater than that of the photoresist layer in the second photoresist semi-reserved region;
performing a first etching process on the insulating medium layer to remove d2-d3A thick insulating dielectric layer;
removing the photoresist layer corresponding to the second photoresist semi-reserved region;
performing a second etching process on the insulating medium layer to remove d1-d2A thick insulating dielectric layer;
removing the photoresist layer corresponding to the first photoresist semi-reserved region;
carrying out a third etching process on the insulating medium layer to remove d-d1A thick insulating dielectric layer;
and removing the photoresist layer corresponding to the photoresist completely reserved area.
In a third aspect, an embodiment of the present invention provides a display device, including: the display panel is provided.
The invention has the following beneficial effects:
the display panel, the manufacturing method thereof and the display device provided by the embodiment of the invention comprise the following steps: the pixel array comprises a substrate base plate, a plurality of pixels and a detection circuit, wherein the plurality of pixels are arranged on the substrate base plate in an array manner; wherein each pixel comprises a plurality of sub-pixels; a sub-pixel comprising: the infrared detection unit is positioned on the substrate base plate, and the light-emitting unit is positioned on one side, away from the substrate base plate, of the infrared detection unit; a light emitting unit comprising: the display device comprises a first electrode positioned on a substrate, a second electrode positioned on one side of the first electrode, which is far away from the substrate, and a display light-emitting part and an infrared light-emitting part which are positioned between the first electrode and the second electrode and are stacked; the detection circuit is electrically connected with each infrared detection unit and used for judging the touch position according to the photocurrent signal of each infrared detection unit. According to the display panel provided by the embodiment of the invention, the infrared light emitting part is integrated in the light emitting unit, the infrared light emitting part and the display light emitting part are arranged in a stacked manner, and the infrared detection unit and the light emitting unit are arranged in a stacked manner, so that the infrared detection unit and the infrared light emitting part do not occupy the aperture opening ratio of pixels, and the resolution of the display screen is improved. In addition, the display light-emitting part and the infrared light-emitting part share the first electrode and the second electrode, so that infrared light can be emitted in the normal display process of the display panel, when a user touches the display screen, the touch position can be determined according to the photocurrent signal of the infrared detection unit, and the touch detection precision is high.
Drawings
FIG. 1 is a schematic diagram of a display panel in the prior art;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 3 is a top view structural diagram of a display panel according to an embodiment of the invention;
FIG. 4 is a diagram showing an emission spectrum of a light-emitting unit and an absorption spectrum of an infrared detection unit according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a light-emitting unit according to an embodiment of the present invention;
fig. 6 is a second schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 7 is a flowchart of a method for manufacturing the display panel according to an embodiment of the invention;
FIG. 8 is a flowchart of a method for forming an insulating dielectric layer according to an embodiment of the present invention;
fig. 9a to 9h are schematic views illustrating a flow structure of a method for manufacturing an insulating dielectric layer according to an embodiment of the invention;
10, pixels; 101. a red sub-pixel; 102. a green sub-pixel; 103. a blue sub-pixel; 104. an infrared light emitting section; 105. an infrared photosensitive detection unit; 21. a substrate base plate; 22. an infrared detection unit; 221. a third electrode; 222. a fourth electrode; 223. an infrared photosensitive layer; TFT2, read transistor; 23. a light emitting unit; 231. a first electrode; 232. a second electrode; 233. a display light emitting section; 2331. a first hole injection layer; 2332. a first hole transport layer; 2333. a display light emitting layer; 2334. a first electron transport layer; 2335. a first electron injection layer; 234. an infrared light emitting section; 2341. a second hole injection layer; 2342. a second hole transport layer; 2343. an infrared light emitting layer; 2344. a second electron transport layer; 2345. a second electron injection layer; 235. a charge generation layer; 24. a reflective layer; 25. an insulating dielectric layer; 26. a pixel defining layer; 27. a first insulating layer; 28. a second insulating layer; 29. and (7) packaging the layer.
Detailed Description
The embodiment of the invention provides a display panel, a manufacturing method thereof and a display device, aiming at the problem that in the prior art, the resolution of the display panel is low due to the fact that an infrared light emitting part and an infrared photosensitive detection unit occupy the aperture opening ratio of pixels.
Embodiments of a display panel, a method for manufacturing the same, and a display device according to embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The thicknesses and shapes of the various film layers in the drawings are not to be considered true proportions, but are merely intended to illustrate the present invention.
In a first aspect, an embodiment of the present invention provides a display panel, as shown in fig. 2 and 3, including: a substrate 21, a plurality of pixels 10 arranged in an array on the substrate 21, and a detection circuit (not shown); wherein the content of the first and second substances,
each pixel 10 includes a plurality of sub-pixels (e.g., a red sub-pixel 101, a green sub-pixel 102, or a blue sub-pixel 103 in fig. 3); a sub-pixel comprising: an infrared detection unit 22 located on the substrate base plate 21, and a light emitting unit 23 located on a side of the infrared detection unit 22 away from the substrate base plate 21;
a light emitting unit 23 including: a first electrode 231 on the base substrate 21, a second electrode 232 on a side of the first electrode 231 facing away from the base substrate 21, and a display light-emitting portion 233 and an infrared light-emitting portion 234 which are stacked between the first electrode 231 and the second electrode 232;
the detection circuit is electrically connected to each infrared detection unit 22, and is configured to determine a touch position according to a photocurrent signal of each infrared detection unit 22.
According to the display panel provided by the embodiment of the invention, the infrared light emitting part is integrated in the light emitting unit, the infrared light emitting part and the display light emitting part are arranged in a stacked manner, and the infrared detection unit and the light emitting unit are arranged in a stacked manner, so that the infrared detection unit and the infrared light emitting part do not occupy the aperture opening ratio of pixels, and the resolution of the display screen is improved. In addition, the display light-emitting part and the infrared light-emitting part share the first electrode and the second electrode, so that infrared light can be emitted in the normal display process of the display panel, when a user touches the display screen, the touch position can be determined according to the photocurrent signal of the infrared detection unit, and the touch detection precision is high.
The display panel provided by the embodiment of the invention is preferably an OLED display panel, especially an AMOLED, and may also be other types of display panels, which is not limited herein.
Referring to fig. 2, the light emitting unit 23 is located on a side of the infrared detection unit 22 away from the substrate base plate 21, that is, the light emitting unit 23 and the infrared detection unit 22 are stacked, and in the light emitting unit, the display light emitting part 233 and the infrared light emitting part 234 are stacked, so that a top view of the display panel can be as shown in fig. 3, that is, the infrared light emitting part 234 and the infrared detection unit 22 do not occupy the aperture ratio of the sub-pixel, compared with the structure shown in fig. 1, the display panel provided in the embodiment of the present invention has an increased aperture ratio of the pixel, thereby increasing the display resolution of the display panel and improving the display effect of the display panel.
It should be noted that the display light-emitting part in the embodiment of the present invention refers to a light-emitting part that provides visible light necessary for display on the display panel, and in the case of an RGB type pixel, the display light-emitting part may refer to a light-emitting part that emits red light, or may refer to a light-emitting part that emits green light or blue light, and the color of light emitted by the display light-emitting part is not limited herein. As shown in fig. 3, in the embodiment of the present invention, each pixel 10 at least includes three sub-pixels with different colors, for example, a red sub-pixel 101, a green sub-pixel 102, and a blue sub-pixel 103, and may also include sub-pixels with other colors, for example, a white sub-pixel or a yellow sub-pixel, where the color of the sub-pixel included in the pixel 10 is not limited herein.
As shown in fig. 2, in the embodiment of the present invention, the display light emitting part 233 is preferably located on the side of the infrared light emitting part 234 away from the substrate board 21, so that the display light emitting part 233 is closer to the display side of the display panel, and the display effect is better, and further, the display light emitting part 233 may be provided on the side of the infrared light emitting part 234 closer to the substrate board 21, and the relative position between the display light emitting part 233 and the infrared light emitting part 234 is not limited herein.
As shown in fig. 2, the display light emitting part 233 and the infrared light emitting part 234 are both located between the first electrode 231 and the second electrode 232, that is, the display light emitting part 233 and the infrared light emitting part 234 share the first electrode 231 and the second electrode 232, so that the infrared light emitting part 234 emits infrared light while the display light emitting part 233 emits light required for display, that is, the display panel provided by the embodiment of the invention can emit infrared light for touch detection while displaying normally without separately controlling the infrared light emitting part 234, thereby reducing the number of electrodes and easily controlling the light emitting unit 23 to emit visible light and infrared light. Specifically, the first electrode 231 may be set as a cathode, and the second electrode 232 may be set as an anode, or the first electrode 231 may be set as an anode, and the second electrode 232 may be set as a cathode, which is not limited herein. In the embodiments of the present invention, the first electrode 231 is taken as an anode, and the second electrode 232 is taken as a cathode, for example, the first electrode 231 may be a transparent metal oxide material, and the second electrode 232 may be a semitransparent metal or alloy material.
Since the display light-emitting portion 233 and the infrared light-emitting portion 234 of the common electrode are included in the light-emitting unit 23, the light-emitting unit 23 can thus emit visible light and infrared light, that is to say the emission spectrum of the light-emitting unit 23 is covered with visible light and infrared light, as shown in figure 4, in the figure, curve a represents the emission spectrum of the light-emitting unit 23, i.e. the wavelength range of the outgoing light of the light-emitting unit 23, curve b represents the absorption spectrum of the infrared detection unit 22, i.e. the wavelength range of the light that can be detected by the infrared detection unit 22, the filled portion in the figure indicates the overlapping area c of the curve a and the curve b, that is, the light emitted from the light emitting unit 23 in the overlapping area c can be detected by the infrared detection unit 23, therefore, in specific implementation, in order to improve the touch effect, the larger the wavelength range covered by the overlapping area c, the better.
In the normal display process of the display panel, infrared light rays are emitted simultaneously, one part of infrared light rays irradiates the infrared detection unit 22 through the first electrode 231 to form an initial photocurrent signal of the infrared detection unit 22, the other part of infrared light rays is emitted through the second electrode 232, when a user finger touches the display screen, the infrared light rays at the touch position are reflected to the infrared detection unit 22 by the user finger (or palm), so that the photocurrent signal on the infrared detection unit 22 is amplified proportionally, and the touch position can be judged according to the photocurrent signal of the infrared detection unit 22.
Further, in the display panel provided in the embodiment of the present invention, as shown in fig. 2, the sub-pixels may further include: a reflective layer 24 on the side of the infrared detection unit 22 close to the substrate base plate 21;
the infrared detection unit 22 at least partially overlaps with the orthographic projection of the reflective layer 24 on the base substrate 21.
In the embodiment of the present invention, the reflective layer 24 is disposed on the side of the infrared detection unit 22 close to the substrate base plate 21, the reflective layer 24 and the second electrode 232 can form a microcavity structure, and the light emitted from the light emitting unit 23 can be reflected between the reflective layer 24 and the second electrode 232, so as to achieve an effect of enhancing resonance, thereby improving the light extraction rate and luminance output efficiency of the visible light emitted from the light emitting unit 23, enhancing a display effect, and simultaneously improving the intensity of the infrared light emitted from the light emitting unit 23 and improving the accuracy of touch detection.
Furthermore, in the display panel provided in the embodiment of the present invention, as shown in fig. 2, the sub-pixels may further include: an insulating dielectric layer 25 between the first electrode 231 and the infrared detection unit 22;
in each pixel, the thickness of the insulating medium layer 25 corresponding to each sub-pixel is different.
In practical application, the depth of the microcavity structure between the reflective layer 24 and the second electrode 232 (i.e., the distance from the side of the reflective layer 24 away from the substrate 21 to the side of the second electrode 232 close to the substrate 21) can be adjusted by configuring the thickness of the insulating medium layer 25, so that the optical path of the emergent light of the light-emitting unit 23 can be adjusted, and in each pixel, each sub-pixel can be configured with a different resonance period to control each sub-pixel to satisfy the resonance condition of the light, so that the light emitted by the light-emitting unit 23 is enhanced when propagating in the microcavity structure, thereby improving the light extraction rate and the luminance output efficiency of the visible light emitted by the light-emitting unit 23, and enhancing the display effect.
As shown in fig. 2, the insulating medium layer 25 is generally disposed in a whole layer, and an area of an orthographic projection of the insulating medium layer 25 on the substrate 21 is larger than an area of an orthographic projection of the first electrode 231 on the substrate 21. Specifically, the insulating dielectric layer 25 may be silicon nitride (SiNx) or silicon oxide (SiO)2) Aluminum oxide (Al)2O3) And zinc oxide (ZnO), and the like, and can be prepared by forming an insulating layer film with the thickness d by adopting chemical vapor deposition or sputtering, and forming an insulating layer pattern corresponding to a pixel by utilizing a gray-scale mask and adopting a photoetching process.
It should be noted that, in the embodiment of the present invention, the thickness of the insulating medium layer 25 refers to the thickness of the insulating medium layer 25 located between the infrared detection unit 22 and the first electrode 231 in each sub-pixel, and may also refer to the distance from the side of the infrared detection unit 22 away from the substrate base 21 to the side of the first electrode 231 close to the substrate base 21, that is, dx shown in fig. 2, where, for sub-pixels of different colors, the value of dx is different.
Specifically, in the display panel provided by the embodiment of the present invention, in each pixel, the thickness of the insulating medium layer 25 increases as the wavelength of the emergent light of the corresponding sub-pixel increases.
Taking the example that each pixel includes red, green and blue sub-pixels, the thickness of the insulating medium layer 25 in the red sub-pixel is d1The thickness of the insulating dielectric layer 25 in the green sub-pixel is d2The thickness of the insulating medium layer in the blue sub-pixel is d3Based on microcavity effect, the wavelength of red light is about 620nm, the wavelength of green light is about 530nm, and the wavelength of blue lightThe wavelength of the light emitted by the light emitting unit 23 is 460nm, the thickness of the insulating medium layer 25 needs to be matched with the wavelength of the light emitted by the light emitting unit 23, and the optical path of the light with longer wavelength is longer under the same resonance period, so as to satisfy the resonance condition, that is, the thickness of each sub-pixel in each pixel needs to satisfy: d1 > d2 > d3, thereby facilitating the enhancement of the outgoing light of the light emitting unit 23.
In a specific implementation, as shown in fig. 2, in the display panel provided in the embodiment of the present invention, the light emitting unit 23 may further include: and a charge generation layer 235 between the display light-emitting portion 233 and the infrared light-emitting portion 234.
By providing the charge generation layer 235, the display light-emitting portion 233 and the infrared light-emitting portion 234 can be connected in series, which is more advantageous for charge transfer and improves light extraction efficiency. For example, in a red sub-pixel, the charge generation layer 235 may be connected in series to the display light emitting portion 233 and the infrared light emitting portion 234 that emit red light, in a green sub-pixel, the charge generation layer 235 may be connected in series to the display light emitting portion 233 and the infrared light emitting portion 234 that emit green light, and in a blue sub-pixel, the charge generation layer 235 may be connected in series to the display light emitting portion 233 and the infrared light emitting portion 234 that emit blue light.
As shown in fig. 5, in practical applications, the display light emitting unit 233 may include the display light emitting layer 2333, and may further include: one or more of the first hole injection layer 2331, the first hole transport layer 2332, the first electron transport layer 2334, and the first electron injection layer 2335, which are stacked, may be further provided with a film layer such as an electron blocking layer or a hole blocking layer, and similarly, the infrared light emitting portion 234 may include the infrared light emitting layer 2343, and may further include: one or more of the second hole injection layer 2341, the second hole transport layer 2342, the second electron transport layer 2344, and the second electron injection layer 2345 may be stacked, or a film layer such as an electron blocking layer or a hole blocking layer may be added. Each film layer in the display light-emitting portion 233 or the infrared light-emitting portion 234 can be formed by a process such as thermal evaporation, printing, or ink-jet printing. Specifically, the infrared light emitting layer 2343 in the infrared light emitting portion 234 can be made of an ir (iii) compound material.
In the embodiment of the invention, as for the OLED display panel, the display light-emitting layer in the display light-emitting part and the infrared light-emitting layer in the infrared light-emitting part can both be organic film layers, so that the manufacturing process of the infrared light-emitting part and the manufacturing process of the display light-emitting part can be easily compatible.
Specifically, as shown in fig. 2, in the display panel provided in the embodiment of the present invention, the infrared detection unit 22 may include: a third electrode 221, a fourth electrode 222, and an infrared photosensitive layer 223 between the third electrode 221 and the fourth electrode 222;
the sub-pixel may further include a read transistor TFT2 electrically connected to the fourth electrode 222; the detection circuit reads the photocurrent signal of the corresponding infrared detection unit 22 through the reading transistor TFT 2.
In fig. 2, the third electrode 221 and the fourth electrode 222 are illustrated as being located in the same film layer, in a specific implementation, the third electrode 221, the fourth electrode 222 and the infrared photosensitive layer 223 may be stacked, as long as the infrared photosensitive layer 223 can be electrically connected to the third electrode 221 and the fourth electrode 222, respectively, so as to form an infrared photodiode, and the relative positions of the third electrode 221, the fourth electrode 222 and the infrared photosensitive layer 223 are not limited herein.
Specifically, the material system of the infrared photosensitive layer 223 is any one of a tellurium-zinc-cadmium-mercury system, an aluminum-gallium-indium-arsenic system, an indium-gallium-arsenic-phosphorus system, an aluminum-gallium-indium-phosphorus system, an indium-gallium-arsenic-antimony system, an aluminum-gallium-arsenic-antimony system, or a calcium-barium niobate system. The infrared photosensitive layer thin film may be formed on the Metal electrode by a process such As Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE), for example, an aluminum gallium indium phosphide (algainp) thin film may be formed by using trimethyl gallium (TMGa), trimethyl indium (TMIn), trimethyl aluminum (TMAl) or phosphine (PH3) As a growth source for MOCVD, or an indium gallium arsenic antimony (InGaAsSb) thin film may be grown by using Ga, In, As or Sb As a source for MBE and setting an appropriate Ga/Sb and In/As beam flux ratio. The pattern of the infrared photosensitive layer 233 may be formed by a photolithography process, and specifically, a photoresist may be formed on the infrared photosensitive thin film layer, and the photoresist may be exposed, developed, and etched using a patterned mask to form the pattern of the infrared photosensitive layer 233.
In practical applications, the third electrode 221 of the infrared detection unit 22 may be connected to a signal line having a fixed potential, and the fourth electrode 222 is connected to the reading transistor TFT2, during the detection process, the detection circuit may read the photocurrent signal of the corresponding infrared detection unit 22 through the reading transistor TFT2, so as to implement the touch function of the display panel.
In the embodiment of the present invention, as shown in fig. 2, each sub-pixel may include a switching transistor TFT1, so that during the manufacturing process, the reading transistor TFT2 in the infrared detection unit 22 may be manufactured by the same manufacturing process as the switching transistor TFT1, and the manufacturing process of the infrared detection unit 22 may be relatively easily compatible with the manufacturing process of the display panel backplane.
Specifically, in the display panel provided in the embodiment of the present invention, the detection circuit may be specifically configured to:
acquiring photocurrent signals of the infrared detection units through the reading transistors;
comparing the photocurrent signal of each infrared detection unit with a preset threshold value, and if the photocurrent signal greater than the preset threshold value exists, determining the position of the corresponding sub-pixel as a pre-determined touch position;
judging whether the photocurrent signal corresponding to the touch position comprises biological characteristic information or not; if so, triggering the corresponding touch operation, otherwise, not triggering the touch operation.
As shown in fig. 6, in the normal display process of the display panel, the light emitting unit 23 emits visible light and infrared light simultaneously, and infrared light emitted from the infrared light emitting unit 234 is emitted, a portion of the infrared light is directly emitted to the infrared photosensitive layer 223 of the infrared detection unit 22 through the first electrode 231, so that an initial photocurrent signal is formed in the infrared detection unit 22, and another portion of the infrared light is emitted through the second electrode 232, when a user finger (i.e. H in the drawing) touches the display screen, the light emitted from the second electrode 232 is reflected into the display panel, and is directly emitted to the infrared photosensitive layer or is emitted to the photosensitive layer after being reflected by the reflective layer 24, so that the photocurrent signal in the infrared detection unit 22 is greatly increased, and the detection circuit can determine the touch position by monitoring the photocurrent signal of the infrared detection unit 22.
The detection circuit is electrically connected with the reading transistor in each sub-pixel, so that the photocurrent signal of each infrared detection unit can be read through each reading transistor. When a user does not touch the display screen, a photocurrent signal detected by the detection circuit is caused by light emitted by the infrared light emitting part directly to the infrared detection unit, when the user touches the display screen, infrared light emitted by the infrared light emitting part from the display surface of the display panel is reflected to the infrared detection unit, so that the photocurrent signal is increased, the detection circuit can set the size of the preset threshold value according to actual conditions by comparing the photocurrent signal with the preset threshold value, when the photocurrent signal is greater than the preset threshold value, proportional increment of the photocurrent signal is shown, the position of the corresponding sub-pixel is probably touched by a finger of the user, and the position of the corresponding sub-pixel can be set as a pre-judgment touch position.
In order to avoid the change of the luminance of the display light emitting part in the display unit or the change of the photocurrent signal caused by the infrared light reflected by other external objects to the infrared detection unit, the detection circuit needs to detect the living body by detecting whether the photocurrent signal includes the biological characteristic information, for example, whether the photocurrent signal includes the frequency change signal caused by blood flow or heartbeat, or whether the touch source is the living body by using the refractive index of the finger skin, the extinction coefficient and the signal difference between the inanimate body. If the photocurrent signal corresponding to the pre-determined touch position includes the biological characteristic information, that is, the touch source is a living body, the corresponding touch operation is started, otherwise, the touch operation is not started, so that the accuracy of the touch function is improved, and misoperation caused by the change of the photocurrent signal due to the brightness change of the display panel or other factors is prevented.
In a second aspect, based on the same inventive concept, an embodiment of the present invention further provides a manufacturing method of the display panel. Because the principle of the manufacturing method for solving the problems is similar to that of the display panel, the implementation of the manufacturing method can be referred to that of the display panel, and repeated details are not repeated.
As shown in fig. 7, the method for manufacturing the display panel according to the embodiment of the present invention may include:
s301, forming infrared detection units on a substrate;
s302, forming a pattern of an insulating medium layer on the film layer where the infrared detection unit is located;
s303, forming each first electrode on the insulating medium layer;
s304, forming each display light-emitting part and each infrared light-emitting part on the film layer on which the first electrode is arranged respectively, wherein the film layer on which the display light-emitting parts are arranged and the film layer on which the infrared light-emitting parts are arranged in a laminated manner;
s305, the second electrodes are formed on the display light-emitting portions and the infrared light-emitting portions, and the resulting structure can be referred to fig. 2.
According to the manufacturing method of the display panel, the light emitting unit integrated with the infrared light emitting part is formed, the infrared light emitting part and the display light emitting part are arranged in a stacked mode, and the infrared detection unit and the light emitting unit are arranged in a stacked mode, so that the infrared detection unit and the infrared light emitting part do not occupy the aperture opening ratio of pixels, and the resolution ratio of the display screen is improved. In addition, the display light-emitting part and the infrared light-emitting part share the first electrode and the second electrode, so that infrared light can be emitted in the normal display process of the display panel, when a user touches the display screen, the touch position can be determined according to the photocurrent signal of the infrared detection unit, and the touch detection precision is high.
In step S301, the material system of the infrared photosensitive layer in the infrared detection unit is any one of a cadmium zinc telluride system, an aluminum gallium indium arsenide system, an indium gallium arsenic phosphide system, an aluminum gallium indium phosphide system, an indium gallium arsenic antimony system, an aluminum gallium arsenic antimony system, or a calcium barium niobate system. The infrared photosensitive layer film can be generated on the metal electrode by adopting the processes of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and the like. The pattern of the infrared photosensitive layer may be formed using a photolithography process. In the process of manufacturing the infrared detection unit, the third electrode and the fourth electrode can be manufactured by adopting the same composition process, and if the material of the reflecting layer is the same as that of the third electrode and the fourth electrode, the third electrode, the fourth electrode and the reflecting layer can adopt the same composition process; otherwise, the reflective layer may be fabricated separately.
In step S302, the insulating dielectric layer may be silicon nitride (SiNx) or silicon oxide (SiO)2) Aluminum oxide (Al)2O3) And zinc oxide (ZnO), and the like, and can be prepared by forming an insulating layer film with the thickness d by adopting chemical vapor deposition or sputtering, and forming an insulating layer pattern corresponding to a pixel by utilizing a gray-scale mask and adopting a photoetching process.
After the step S302, the method may further include: a pixel definition layer is formed. As shown in fig. 2, the pixel defining layer 26 is used to separate the sub-pixels.
The step S304 may specifically include: the structure of the organic electroluminescent device is formed by sequentially laminating a pattern of a hole injection layer formed on the surface of the first electrode by a primary patterning process, a pattern of a hole transport layer formed on the surface of the hole injection layer by a primary patterning process, and a display light emitting layer (for example, a red light emitting layer, a green light emitting layer, or a blue light emitting layer), a hole blocking layer, an electron transport layer, an electron injection layer, a charge generation layer, a hole transport layer, an infrared light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a second electrode pattern. In specific implementation, each organic film layer in the display unit may be implemented by thermal evaporation, inkjet printing, laser transfer, or the like.
After step S305, the method may further include: an encapsulation layer 29 is prepared as shown in fig. 6.
Further, before the step S301, the method may further include: the switching transistor TFT1 and the reading transistor TFT2 are formed on the substrate through a patterning process. In the manufacturing process, the source S1 and the drain D1 in the switching transistor TFT1, and the source S2 and the drain D2 in the reading transistor TFT2 may be manufactured by using the same patterning process, and the gate G1 in the switching transistor TFT1 and the gate G2 in the reading transistor TFT2 may be manufactured by using the same patterning process.
As shown in fig. 2 and fig. 6, in the manufacturing process, the method may further include: a first insulating layer 27 is formed to insulate a layer where the gate G1 of the TFT1 is located and a layer where the third electrode 221 of the infrared detection unit 22 is located, and a second insulating layer 28 is formed to insulate a layer where the gate G1 of the TFT1 is located and a layer where the source S1 of the TFT1 is located.
Specifically, as shown in fig. 3, each pixel 10 may include three sub-pixels; the thickness of the insulating medium layer corresponding to each sub-pixel is d1、d2And d3And d is1＞d2＞d3；
The step S302 may specifically include, as shown in fig. 8:
s401, forming an insulating medium layer 25 with the thickness d on the film layer where the infrared detection unit is located, and forming a photoresist layer 500 on the insulating medium layer 25, as shown in FIG. 9 a;
s402, patterning the photoresist layer 500 to obtain a photoresist complete reservation region A1, a first photoresist semi-reservation region A2, a second photoresist semi-reservation region A3 and a photoresist complete removal region A4 of the photoresist layer 500; the thickness of the photoresist layer in the first photoresist semi-reserved region a2 is greater than the thickness of the photoresist layer in the second photoresist semi-reserved region A3, as shown in fig. 9 b; specifically, the photoresist layer may be exposed and developed by using a gray-scale mask to obtain a pattern of the photoresist layer. The photoresist complete remaining region a1 corresponds to an insulating dielectric layer in a non-pixel region, the first photoresist half remaining region a2 corresponds to an insulating dielectric layer in a red sub-pixel to be formed, the second photoresist half remaining region A3 corresponds to an insulating dielectric layer in a green sub-pixel to be formed, and the photoresist complete removed region a4 corresponds to an insulating dielectric layer in a blue sub-pixel.
S403, carrying out a first etching process on the insulating medium layer 25 to remove d2-d3The thickness of the insulating dielectric layer 25, as shown in fig. 9c, only the insulating dielectric layer 25 in the region a4 is etched since only the insulating dielectric layer 25 in the region a4 where the photoresist is completely removed is not covered by the photoresist layer 500;
s404, removing the photoresist layer 500 corresponding to the second photoresist semi-reserved region A3, as shown in fig. 9d, specifically, an ashing process may be used to remove the photoresist layer 500 in the second photoresist semi-reserved region A3;
s405, carrying out a second etching process on the insulating medium layer 25 to remove d1-d2A thickness of the insulating dielectric layer 25, as shown in fig. 9e, at which time only the insulating dielectric layer 25 in region A3 and region a4 is not covered by the photoresist layer 500, and thus only the insulating dielectric layer 25 in region A3 and region a4 is etched;
s406, removing the photoresist layer 500 corresponding to the first photoresist semi-reserved region a2, as shown in fig. 9f, specifically, an ashing process may be used to remove the photoresist layer 500 in the first photoresist semi-reserved region a 2;
s407, carrying out a third etching process on the insulating medium layer 25 to remove d-d1The insulating dielectric layer 25 with a thickness, as shown in fig. 9g, at this time, the region a2, the region A3 and the region a4 are not covered by the photoresist layer 500, so that the insulating dielectric layer 25 in the region a2, the region A3 and the region a4 can be etched;
s408, removing the photoresist layer 500 corresponding to the photoresist complete reservation region A1, and obtaining the structure shown in FIG. 9 h.
For the photoresist completely remaining region a1, since the region a1 is covered by the photoresist layer 500 in the three etching processes, the insulating dielectric layer 25 in the region a1 is not etched, and thus after step S408, the thickness of the insulating dielectric layer 25 in the region a1 is still d; for the first semi-reserved photoresist region A2, since the photoresist layer 500 in the region A2 is removed in step S406, only the third etching in step S407 removes d-d in the region A21The thickness of the insulating dielectric layer 25, and thus, after step S408, the thickness of the insulating dielectric layer 25 in the region a2 is d- (d-d)1)＝d1(ii) a For the second photoresist semi-reserved region A3, since the photoresist layer 500 in the region A3 is removed in the step S404, the second etching process in the step S405 removes d1-d2The third etching in step S407 of the thickness of the insulating dielectric layer 25 removes d-d in the region A31Thickness of the insulating dielectric layer 25, and thus, after step S408, the thickness of the insulating dielectric layer 25 in region a3Is d- (d)1-d2)-(d-d1)＝d2(ii) a For the photoresist-completely-removed region a4, since the photoresist layer 500 in the region a4 is removed in step S402, the insulating dielectric layer 25 in the region a4 is etched in the three etching processes, and thus the thickness of the insulating dielectric layer 25 in the region a4 is d- (d) after step S4082-d3)-(d1-d2)-(d-d1)＝d3。
In a third aspect, based on the same inventive concept, an embodiment of the present invention further provides a display device, including the display panel, where the display device may be applied to any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator. Since the principle of the display device to solve the problem is similar to that of the display panel, the display device can be implemented by the display panel, and repeated descriptions are omitted.
According to the display panel, the manufacturing method thereof and the display device provided by the embodiment of the invention, the infrared light emitting part is integrated in the light emitting unit, the infrared light emitting part and the display light emitting part are arranged in a stacked manner, and the infrared detection unit and the light emitting unit are arranged in a stacked manner, so that the infrared detection unit and the infrared light emitting part do not occupy the aperture opening ratio of pixels, and the resolution of the display screen is improved. In addition, the display light-emitting part and the infrared light-emitting part share the first electrode and the second electrode, so that infrared light can be emitted in the normal display process of the display panel, when a user touches the display screen, the touch position can be determined according to the photocurrent signal of the infrared detection unit, and the touch detection precision is high. Moreover, the reflecting layer is arranged, so that the reflecting layer and the second electrode form a microcavity structure, light emitted by the light emitting unit can be reflected between the reflecting layer and the second electrode, and the effect of resonance enhancement is achieved, so that the light extraction rate and the brightness output efficiency of visible light emitted by the light emitting unit are improved, the display effect is enhanced, meanwhile, the intensity of infrared light emitted by the light emitting unit can also be improved, and the touch detection precision is improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A display panel, comprising: the pixel array comprises a substrate base plate, a plurality of pixels and a detection circuit, wherein the plurality of pixels are arranged on the substrate base plate in an array; wherein the content of the first and second substances,
each of the pixels includes a plurality of sub-pixels; the sub-pixel includes: the infrared detection unit is positioned on the substrate base plate, and the light-emitting unit is positioned on one side, away from the substrate base plate, of the infrared detection unit;
the light emitting unit includes: the display device comprises a substrate, a first electrode, a second electrode, a display light-emitting part and an infrared light-emitting part, wherein the first electrode is positioned on the substrate, the second electrode is positioned on one side, away from the substrate, of the first electrode, and the display light-emitting part and the infrared light-emitting part are positioned between the first electrode and the second electrode and are arranged in a stacked mode;
the detection circuit is electrically connected with each infrared detection unit and used for judging a touch position according to the photocurrent signal of each infrared detection unit.
2. The display panel of claim 1, wherein the sub-pixel further comprises: the reflecting layer is positioned on one side of the infrared detection unit close to the substrate base plate;
the infrared detection unit is at least partially overlapped with the orthographic projection of the reflecting layer on the substrate base plate.
3. The display panel of claim 2, wherein the sub-pixel further comprises: the insulating medium layer is positioned between the first electrode and the infrared detection unit;
in each pixel, the thicknesses of the insulating medium layers corresponding to the sub-pixels are different.
4. The display panel according to claim 3, wherein in each of the pixels, the thickness of the insulating medium layer increases as the wavelength of the light emitted from the display light emitting portion of the corresponding sub-pixel increases.
5. The display panel according to claim 1, wherein the light emitting unit further comprises: and a charge generation layer located between the display light-emitting portion and the infrared light-emitting portion.
6. The display panel according to claim 1, wherein the infrared detection unit includes: the infrared photosensitive layer is positioned between the third electrode and the fourth electrode;
the sub-pixel further comprises a read transistor electrically connected to the fourth electrode; and the detection circuit reads the corresponding photocurrent signal of the infrared detection unit through the reading transistor.
7. The method for inspecting a display panel according to claim 6, comprising:
acquiring photocurrent signals of the infrared detection units through the reading transistors;
comparing the photocurrent signal of each infrared detection unit with a preset threshold value, and if the photocurrent signal greater than the preset threshold value exists, determining the position of the corresponding sub-pixel as a pre-judgment touch position; or comparing the photocurrent signal of each infrared detection unit with the corresponding initial photocurrent signal, and if the photocurrent signal of the infrared detection unit generates proportional amplification, determining the position of the corresponding sub-pixel as a pre-determined touch position;
judging whether the photocurrent signal corresponding to the pre-determined touch position comprises biological characteristic information; if so, triggering the corresponding touch operation, otherwise, not triggering the touch operation.
8. A method for manufacturing a display panel according to any one of claims 1 to 6, comprising:
forming each infrared detection unit on a substrate;
forming a pattern of an insulating medium layer on the film layer where the infrared detection unit is located;
forming first electrodes on the insulating medium layer;
respectively forming each display light-emitting part and each infrared light-emitting part on the film layer where the first electrode is located, wherein the film layer where the display light-emitting parts are located and the film layer where the infrared light-emitting parts are located are arranged in a laminated mode;
second electrodes are formed on the display light-emitting portions and the infrared light-emitting portions.
9. The method of claim 8, wherein each of the pixels comprises three sub-pixels; the thickness of the insulating medium layer corresponding to each sub-pixel is d1、d2And d3And d is1＞d2＞d3；
The forming of the pattern of the insulating medium layer on the film layer where the infrared detection unit is located comprises the following steps:
forming an insulating medium layer with the thickness of d on the film layer where the infrared detection unit is located, and forming a photoresist layer on the insulating medium layer;
patterning the photoresist layer to obtain a photoresist complete reserved region, a first photoresist semi-reserved region, a second photoresist semi-reserved region and a photoresist complete removal region of the photoresist layer; the thickness of the photoresist layer in the first photoresist semi-reserved region is greater than that of the photoresist layer in the second photoresist semi-reserved region;
performing a first etching process on the insulating medium layer to remove d2-d3A thick insulating dielectric layer;
removing the photoresist layer corresponding to the second photoresist semi-reserved region;
performing a second etching process on the insulating medium layer to remove d1-d2Of thicknessAn insulating dielectric layer;
removing the photoresist layer corresponding to the first photoresist semi-reserved region;
carrying out a third etching process on the insulating medium layer to remove d-d1A thick insulating dielectric layer;
and removing the photoresist layer corresponding to the photoresist completely reserved area.
10. A display device, comprising: a display panel according to any one of claims 1 to 6.
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| EP3944329A4 (en) * | 2019-03-18 | 2022-10-26 | BOE Technology Group Co., Ltd. | Display panel and manufacturing method thereof |
| US11049992B2 (en) * | 2019-07-11 | 2021-06-29 | Pix Art Imaging Inc. | Dual wavelength light emitting device, dual wavelength light transceiving device and display |
| CN111162131A (en) * | 2020-01-02 | 2020-05-15 | 云谷（固安）科技有限公司 | Photoelectric sensor and display panel |
| CN111509009B (en) * | 2020-04-22 | 2023-07-14 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
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