CN108288639A - A kind of display panel, its production method and display device - Google Patents
A kind of display panel, its production method and display device Download PDFInfo
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- CN108288639A CN108288639A CN201810076498.8A CN201810076498A CN108288639A CN 108288639 A CN108288639 A CN 108288639A CN 201810076498 A CN201810076498 A CN 201810076498A CN 108288639 A CN108288639 A CN 108288639A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The invention discloses a kind of display panel, its production method and display device, the display panel, including：Underlay substrate, the multiple pixels being arranged in array on underlay substrate and detection circuit；Wherein, each pixel includes multiple sub-pixels；Sub-pixel, including：Infrared detecting unit on underlay substrate, and positioned at infrared detecting unit away from the luminescence unit of underlay substrate side；Luminescence unit, including：First electrode on underlay substrate, is located at the second electrode that first electrode deviates from underlay substrate side, and between first electrode and second electrode and the display illumination region being stacked and infraluminescence portion；Detection circuit is electrically connected with each infrared detecting unit, for judging touch location according to the photo-signal of each infrared detecting unit.Display panel provided in an embodiment of the present invention, infrared detecting unit and infraluminescence portion will not occupy the aperture opening ratio of pixel, improve the resolution ratio of display screen.
Description
Technical field
The present invention relates to display technology field, espespecially a kind of display panel, its production method and display device.
Background technology
Organic electroluminescent (Organic Light-Emitting Diode, OLED) display panel is due to having high comparison
Degree, wide colour gamut, fast response time, can the excellent specific properties such as flexibility, evoke the enthusiasm that flat sheet industries are commercially produced, become future
Most potential competitor in display technology.Wherein, active-matrix organic electroluminescent (Active-matrix
Organic light emitting diode, AMOLED) display panel is widely used.
With the gradually ripe and touch screen sensing layer and AMOLED of organic electroluminescent (OLED) display panel technology
Integrated embedded technology synchronized development, the AMOLED screens based on covering surface-type (On-cell) touch technology have realized business
Change, starts to be applied to Public Service Field and personal entertainment device, be based on the AMOLED screens of embedded (In-cell) touch technology
Also become the target that each manufacturer greatly develops.
As shown in Figure 1, in the prior art, in embedded AMOLED display panels, each pixel 10 includes：Red (R)
Sub-pixels 101, green (G) sub-pixels 102, blue (B) sub-pixels 103, infrared (IR) luminescence unit 104 and infrared photosensitive
(IR sensor) unit 105 is detected, infraluminescence portion 104 emits light and reflected through user's finger or palm touch-control, by infrared light
Quick detection unit 105 detects and positions the touch location of user, to realize the function of touch and display, but due to infrared hair
Light portion 104 and infrared photosensitive detection unit 105 occupy the aperture opening ratio of pixel 10, cause the resolution ratio of display panel relatively low.
Invention content
A kind of display panel of offer of the embodiment of the present invention, its production method and display device, to solve in the prior art
It is existing due to infraluminescence portion and infrared photosensitive detection unit occupies the aperture opening ratio of pixel, cause display panel resolution ratio relatively low
The problem of.
In a first aspect, an embodiment of the present invention provides a kind of display panels, including：Underlay substrate is located at the substrate base
The multiple pixels being arranged in array on plate and detection circuit；Wherein,
Each described pixel includes multiple sub-pixels；The sub-pixel, including：It is infrared on the underlay substrate
Probe unit, and positioned at the infrared detecting unit away from the luminescence unit of the underlay substrate side；
The luminescence unit, including：First electrode on the underlay substrate is located at the first electrode and deviates from institute
The second electrode of underlay substrate side is stated, and between the first electrode and the second electrode and is stacked aobvious
Show illumination region and infraluminescence portion；
The detection circuit is electrically connected with each infrared detecting unit, for the light according to each infrared detecting unit
Current signal judges touch location.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, the sub-pixel
Further include：Positioned at the infrared detecting unit close to the reflecting layer of the underlay substrate side；
The infrared detecting unit and orthographic projection of the reflecting layer on the underlay substrate are least partially overlapped.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, the sub-pixel
Further include：Insulating medium layer between the first electrode and the infrared detecting unit；
In each described pixel, the thickness of the corresponding insulating medium layer of each sub-pixel is different.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, in each institute
It states in pixel, the thickness of the insulating medium layer increases with the increase of the wavelength of the corresponding sub-pixel emergent ray.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, the luminous list
Member further includes：Charge generating layers between the display illumination region and the infraluminescence portion.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, the infrared spy
Unit is surveyed, including：Third electrode, the 4th electrode, and the infrared light between the third electrode and the 4th electrode
Photosensitive layer；
The sub-pixel further includes the reading transistor being electrically connected with the 4th electrode；The detection circuit passes through described
Read the photo-signal that transistor reads the corresponding infrared detecting unit.
In one possible implementation, in above-mentioned display panel provided in an embodiment of the present invention, the detection electricity
Road is specifically used for：
Pass through each photo-signal for reading transistor and obtaining each infrared detecting unit；
By the photo-signal of each infrared detecting unit compared with predetermined threshold value, it is more than the predetermined threshold value if existing
Photo-signal, then the position of the corresponding sub-pixel be anticipation position of touch；
Judge in the corresponding photo-signal of the anticipation position of touch whether to include biological information；If so, touching
It sends out touch control operation corresponding, does not otherwise trigger touch control operation.
Second aspect, an embodiment of the present invention provides a kind of production methods of above-mentioned display panel, including：
Each infrared detecting unit is formed on underlay substrate；
The figure of insulating medium layer is formed in film layer where the infrared detecting unit；
Each first electrode is formed on the insulating medium layer；
It is respectively formed layer in film layer where the first electrode and respectively shows illumination region and each infraluminescence portion, and is described
Film layer is to be stacked with film layer where the infraluminescence portion where display illumination region；
Each second electrode is formed on each display illumination region and each infraluminescence portion.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, described in each
Pixel includes three sub-pixels；The thickness of the corresponding insulating medium layer of each sub-pixel is respectively d1、d2And d3, and d1＞ d2＞
d3；
The film layer where the infrared detecting unit forms the figure of insulating medium layer, including：
The insulating medium layer that thickness is d is formed in the film layer where the infrared detecting unit, and described exhausted
Photoresist layer is formed on edge dielectric layer；
The photoresist layer is patterned, region, the first light is fully retained in the photoresist for obtaining the photoresist layer
Photoresist partly retains region, half reservation region of the second photoresist and photoresist and completely removes region；First photoresist half is protected
The thickness of photoresist layer in region is stayed to be more than the thickness that second photoresist half retains photoresist layer in region；
First time etching technics is carried out to the insulating medium layer, to remove d2-d3The insulating medium layer of thickness；
It removes second photoresist half and retains the corresponding photoresist layer in region；
Second of etching technics is carried out to the insulating medium layer, to remove d1-d2The insulating medium layer of thickness；
It removes first photoresist half and retains the corresponding photoresist layer in region；
Third time etching technics is carried out to the insulating medium layer, to remove d-d1The insulating medium layer of thickness；
It removes the photoresist and the corresponding photoresist layer in region is fully retained.
The third aspect, an embodiment of the present invention provides a kind of display devices, including：Above-mentioned display panel.
The present invention has the beneficial effect that：
Display panel, its production method and display device provided in an embodiment of the present invention, the display panel, including：Substrate
Substrate, the multiple pixels being arranged in array on underlay substrate and detection circuit；Wherein, each pixel includes more
A sub-pixel；Sub-pixel, including：Infrared detecting unit on underlay substrate, and positioned at infrared detecting unit away from lining
The luminescence unit of substrate side；Luminescence unit, including：First electrode on underlay substrate, deviates from positioned at first electrode
The second electrode of underlay substrate side, and between first electrode and second electrode and the display illumination region that is stacked and
Infraluminescence portion；Detection circuit is electrically connected with each infrared detecting unit, for the photo-signal according to each infrared detecting unit
Judge touch location.Infraluminescence portion is integrated in luminescence unit by display panel provided in an embodiment of the present invention, and infrared hair
Light portion is stacked with display illumination region and infrared detecting unit is stacked with luminescence unit, thus, infrared detecting unit
The aperture opening ratio that pixel will not be occupied with infraluminescence portion improves the resolution ratio of display screen.Further, since display illumination region with it is red
Outer illumination region shares first electrode and second electrode, thus during display panel is normally shown, while can be emitted infrared
Light can determine touch location, touch control detection when user's touch display screen according to the photo-signal of infrared detecting unit
Precision is higher.
Description of the drawings
Fig. 1 is the structural schematic diagram of display panel in the prior art；
Fig. 2 is one of the structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 3 is the overlooking structure figure of display panel provided in an embodiment of the present invention；
Fig. 4 is the luminescent spectrum of luminescence unit and the absorption spectrum of infrared detecting unit in the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of luminescence unit in the embodiment of the present invention；
Fig. 6 is the second structural representation of display panel provided in an embodiment of the present invention；
Fig. 7 is the production method flow chart of above-mentioned display panel provided in an embodiment of the present invention；
Fig. 8 is the production method flow chart of insulating medium layer provided in an embodiment of the present invention；
Fig. 9 a to Fig. 9 h are the production method flowage structure schematic diagram of insulating medium layer in the embodiment of the present invention；
Wherein, 10, pixel；101, red sub-pixel；102, green sub-pixels；103, blue subpixels；104, infrared hair
Light portion；105, infrared photosensitive detection unit；21, underlay substrate；22, infrared detecting unit；221, third electrode；222, the 4th electricity
Pole；223, infrared photosensitive layer；TFT2, transistor is read；23, luminescence unit；231, first electrode；232, second electrode；233、
Show illumination region；2331, the first hole injection layer；2332, the first hole transmission layer；2333, luminescent layer is shown；2334, first
Electron transfer layer；2335, the first electron injecting layer；234, infraluminescence portion；2341, the second hole injection layer；2342, second is empty
Cave transport layer；2343, infraluminescence layer；2344, the second electron transfer layer；2345, the second electron injecting layer；235, charge generates
Layer；24, reflecting layer；25, insulating medium layer；26, pixel defining layer；27, the first insulating layer；28, second insulating layer；29, it encapsulates
Layer.
Specific implementation mode
For existing in the prior art due to infraluminescence portion and infrared photosensitive detection unit occupies the aperture opening ratio of pixel,
The problem for causing display panel resolution ratio relatively low, an embodiment of the present invention provides a kind of display panel, its production method and displays
Device.
Below in conjunction with the accompanying drawings, to the specific of display panel provided in an embodiment of the present invention, its production method and display device
Embodiment is described in detail.The thickness of each film layer and shape do not reflect that actual proportions, purpose are only illustrated to say in attached drawing
Bright the content of present invention.
In a first aspect, an embodiment of the present invention provides a kind of display panels, as shown in Figures 2 and 3, including：Underlay substrate
21, the multiple pixels 10 being arranged in array on underlay substrate 21 and detection circuit (not shown)；Wherein,
Each pixel 10 includes multiple sub-pixels (such as red sub-pixel 101, green sub-pixels 102 or indigo plant in Fig. 3
Sub-pixels 103)；Sub-pixel, including：Infrared detecting unit 22 on underlay substrate 21, and it is located at infrared acquisition list
Member 22 deviates from the luminescence unit 23 of 21 side of underlay substrate；
Luminescence unit 23, including：First electrode 231 on underlay substrate 21 is located at first electrode 231 and deviates from substrate
The second electrode 232 of 21 side of substrate, and between first electrode 231 and second electrode 232 and the display that is stacked
Illumination region 233 and infraluminescence portion 234；
Detection circuit is electrically connected with each infrared detecting unit 22, for the photo-signal according to each infrared detecting unit 22
Judge touch location.
Infraluminescence portion is integrated in luminescence unit by display panel provided in an embodiment of the present invention, and infraluminescence portion
It is stacked and infrared detecting unit is stacked with luminescence unit with display illumination region, thus, infrared detecting unit and red
Outer illumination region will not occupy the aperture opening ratio of pixel, improve the resolution ratio of display screen.Further, since display illumination region and infrared hair
Light portion shares first electrode and second electrode, thus during display panel is normally shown, at the same can with exiting infrared light line,
When user's touch display screen, touch location, touch control detection precision can be determined according to the photo-signal of infrared detecting unit
It is higher.
Display panel provided in an embodiment of the present invention, preferably OLED display panel, especially AMOLED can also be it
The display panel of his type, does not limit herein.
With reference to Fig. 2, luminescence unit 23 is located at the side that infrared detecting unit 22 deviates from underlay substrate 21, that is to say, that hair
Light unit 23 is to be stacked with infrared detecting unit 22, moreover, in luminescence unit, shows illumination region 233 and infraluminescence
Portion 234 is to be stacked, thus, the vertical view of the display panel can be with as shown in figure 3, i.e. infraluminescence portion 234 and infrared spy
The aperture opening ratio of sub-pixel, compared to structure shown in FIG. 1, display panel provided in an embodiment of the present invention will not be occupied by surveying unit 22
The aperture opening ratio of pixel is improved, thus improves the display resolution of display panel, keeps the display effect of display panel more preferable.
It should be noted that the display illumination region in the embodiment of the present invention is referred to and is provided needed for display for display panel
Visible light luminous component, by taking RGB type pixels as an example, display illumination region may indicate that the luminous component for penetrating feux rouges, can also
The luminous component of green light or blue light can be emitted by referring to, herein not to showing that the emergent light color of illumination region is defined.Such as Fig. 3 institutes
Show, in the embodiment of the present invention, the sub-pixel of three different colours is included at least in each pixel 10, such as may include red
Sub-pixel 101, green sub-pixels 102 and blue subpixels 103 can also include the sub-pixel of other colors, such as may be used also
To include white sub-pixels or yellow sub-pixel, the color for the sub-pixel for not including to pixel 10 herein is defined.
As shown in Fig. 2, in the embodiment of the present invention, display illumination region 233 is preferably located at infraluminescence portion 234 and deviates from substrate
The side of substrate 21, in this way, display illumination region 233 is closer to the display side of display panel, display effect is preferable, in addition, also may be used
Will show that illumination region 233 is arranged in infraluminescence portion 234 close to the side of underlay substrate 21, herein not to showing illumination region
233 are defined with the relative position in infraluminescence portion 234.
As shown in Fig. 2, display illumination region 233 and infraluminescence portion 234 are respectively positioned on first electrode 231 and second electrode 232
Between, that is to say, that display illumination region 233 and infraluminescence portion 234 share first electrode 231 and second electrode 232, thus
While showing the light needed for the outgoing display of illumination region 233, infraluminescence portion 234 also can exiting infrared light, that is to say, that this
The display panel that inventive embodiments provide can be emitted the infrared light for detecting touch-control while normal display, without
Infraluminescence portion 234 is individually controlled, number of electrodes is reduced, and is easy to control luminescence unit 23 and is emitted visible light and red
Outer light.Specifically, could be provided as first electrode 231 is cathode, and second electrode 232 is anode, may be set to be the first electricity
Pole 231 is anode, and second electrode 232 is cathode, is not limited herein.In the embodiment of the present invention with first electrode 231 be sun
Pole, second electrode 232 are to illustrate for cathode, and first electrode 231 can be transparent metal oxide materials, the second electricity
Pole 232 can be translucent metal or alloy material.
Due to including display illumination region 233 and the infraluminescence portion 234 of common electrode in luminescence unit 23, shine so single
Member 23 can be emitted visible light and infrared light, that is to say, that visible light and infrared is covered in the emission spectrum of luminescence unit 23
Light, as shown in figure 4, curve a indicates the emission spectrum of luminescence unit 23, that is, the wave of the emergent ray of luminescence unit 23 in figure
Long range, curve b are the absorption spectrum of infrared detecting unit 22, that is, the light that is able to detect that of infrared detecting unit 22
Wave-length coverage has in figure the part of filling to indicate the overlapping region c of curve a and curve b, that is, the position that luminescence unit 23 is emitted
Light in the c of overlapping region could be detected by infrared detecting unit 23, therefore, in the specific implementation, in order to make touch-control imitate
Fruit is more preferable, and the wave-length coverage that can control overlapping region c coverings is the bigger the better.
During display panel is normally shown, while exiting infrared light line, a part for infrared light is through first electrode 231
It is irradiated on infrared detecting unit 22, forms the Primary photocurrent signal of infrared detecting unit 22, another part infrared light is through the
Two electrodes 232 project, and when user's finger touch display screen, the infrared light at touch location is reflected by user's finger (or palm)
To infrared detecting unit 22, the photo-signal on infrared detecting unit 22 is set to generate proportionality amplification, so as to basis
The photo-signal of infrared detecting unit 22 judges position of touch.
Further, in above-mentioned display panel provided in an embodiment of the present invention, as shown in Fig. 2, sub-pixel can also include：
Positioned at infrared detecting unit 22 close to the reflecting layer 24 of 21 side of underlay substrate；
Infrared detecting unit 22 and orthographic projection of the reflecting layer 24 on underlay substrate 21 are least partially overlapped.
In embodiments of the present invention, by the way that reflecting layer 24 is arranged close to 21 side of underlay substrate in infrared detecting unit 22,
Reflecting layer 24 can constitute micro-cavity structure with second electrode 232, and the light that luminescence unit 23 is emitted can be in reflecting layer 24 and the
It is reflected between two electrodes 232, achievees the effect that resonance enhances, to improve the light extraction efficiency for the visible light that luminescence unit 23 is emitted
And brightness delivery efficiency, enhance display effect, it is also possible to the intensity of the infrared light of the outgoing of luminescence unit 23 is improved,
Improve the precision of touch control detection.
Further, in above-mentioned display panel provided in an embodiment of the present invention, as shown in Fig. 2, sub-pixel can also wrap
It includes：Insulating medium layer 25 between first electrode 231 and infrared detecting unit 22；
In each pixel, the thickness of the corresponding insulating medium layer of each sub-pixel 25 is different.
It in practical applications, can be by configuring the thickness of insulating medium layer 25, to adjust reflecting layer 24 and second electrode
Micro-cavity structure between 232 depth (i.e. reflecting layer 24 away from underlay substrate 21 side to second electrode 232 close to substrate base
The distance between the side of plate 21), so as to adjust luminescence unit 23 emergent ray light path, in each pixel,
Each sub-pixel can configure different harmonic periods, to control the condition of resonance that each sub-pixel meets light, to
The light that luminescence unit 23 is emitted is set to be enhanced when being propagated in micro-cavity structure, to improve the visible of the outgoing of luminescence unit 23
The light extraction efficiency and brightness delivery efficiency of light enhance display effect.
As shown in Fig. 2, insulating medium layer 25 is generally flood setting, positive throwing of the insulating medium layer 25 on underlay substrate 21
Shadow area is more than the area of orthographic projection of the first electrode 231 on underlay substrate 21.Specifically, insulating medium layer 25 may be used
Silicon nitride (SiNx), silica (SiO2), alundum (Al2O3) (Al2O3), the inorganic material such as zinc oxide (ZnO) make, may be used
Chemical vapor deposition or sputtering form the insulating layer of thin-film that thickness is d, using gray level mask plate, and use photoetching process, are formed
The layer pattern of respective pixel.
It should be noted that in the embodiment of the present invention, the thickness of insulating medium layer 25 refers in each sub-pixel,
The thickness of the insulating medium layer 25 at position between infrared detecting unit 22 and first electrode 231, can also refer to, infrared
Probe unit 22 away from underlay substrate 21 side to first electrode 231 institute in the distance of 21 side of underlay substrate, i.e. Fig. 2
The dx shown, for the sub-pixel of different colours, the value of dx is different.
Specifically, in above-mentioned display panel provided in an embodiment of the present invention, in each pixel, insulating medium layer 25
Thickness increases with the increase of the wavelength of corresponding sub-pixel emergent ray.
By taking each pixel includes the sub-pixel of three kinds of colors of RGB as an example, insulating medium layer 25 in red sub-pixel
Thickness is d1, the thickness of insulating medium layer 25 is d in green sub-pixels2, the thickness of insulating medium layer is d in blue subpixels3,
Based on microcavity effect, the wavelength of feux rouges is about 620nm, and the wavelength of green light is about 530nm, and the wavelength of blue light is about 460nm, insulation
The thickness of dielectric layer 25 needs the wavelength with the emergent ray of luminescence unit 23 to match, under identical harmonic period, wavelength
The light path of longer light is longer, could meet condition of resonance, that is to say, that the thickness of each sub-pixel need to expire in each pixel
Foot：D1 ＞ d2 ＞ d3, the emergent ray to be conducive to luminescence unit 23 are enhanced.
In the specific implementation, as shown in Fig. 2, in above-mentioned display panel provided in an embodiment of the present invention, luminescence unit 23 is also
May include：Charge generating layers 235 between display illumination region 233 and infraluminescence portion 234.
By the way that charge generating layers 235 are arranged, display illumination region 233 can be together in series with infraluminescence portion 234, to
It is more advantageous to the transmission of charge, improves light extraction efficiency.For example, in red sub-pixel, charge generating layers 234 can connect outgoing
The display illumination region 233 of feux rouges and infraluminescence portion 234, in green sub-pixels, the outgoing that can connect of charge generating layers 234 is green
The display illumination region 233 of light and infraluminescence portion 234, in blue subpixels, charge generating layers 234, which can connect, is emitted blue light
Display illumination region 233 and infraluminescence portion 234.
As shown in figure 5, in practical applications, display illumination region 233 may include display luminescent layer 2333, can also wrap
It includes：The first hole injection layer 2331, the first hole transmission layer 2332, the first electron transfer layer 2334 and first being stacked
One or more of electron injecting layer 2335 can also increase the film layers such as electronic barrier layer or hole blocking layer, similarly, infrared
Illumination region 234 may include infraluminescence layer 2343, can also include：The second hole injection layer 2341, second being stacked
One or more of hole transmission layer 2342, the second electron transfer layer 2344 and second electron injecting layer 2345, can also
Increase the film layers such as electronic barrier layer or hole blocking layer.The techniques such as hot evaporation, printing or inkjet printing may be used and make display
Each film layer in illumination region 233 or infraluminescence portion 234.Specifically, the infraluminescence layer 2343 in infraluminescence portion 234 can be with
It is made of Ir (III) compound-material.
In the embodiment of the present invention, for OLED display panel, the display luminescent layer in illumination region and infraluminescence portion are shown
In infraluminescence layer can all be organic film, so as to be relatively easy to the manufacture craft in infraluminescence portion and display
The manufacture craft of illumination region is compatible with.
Specifically, as shown in Fig. 2, in above-mentioned display panel provided in an embodiment of the present invention, infrared detecting unit 22 can be with
Including：Third electrode 221, the 4th electrode 222, and the infrared photosensitive layer between third electrode 221 and the 4th electrode 222
223；
Sub-pixel can also include the reading transistor TFT2 being electrically connected with the 4th electrode 222；Detection circuit passes through reading
Transistor TFT2 reads the photo-signal of corresponding infrared detecting unit 22.
Illustrated so that third electrode 221 is located at same film layer with the 4th electrode 222 as an example in Fig. 2, in the specific implementation,
Third electrode 221, the 4th electrode 222 and infrared photosensitive layer 223 can also be stacked, as long as infrared photosensitive layer 223 can
It is electrically connected respectively with third electrode 221 and the 4th electrode 222, it is not right herein so as to constitute infrared photodiode
The relative position of third electrode 221, the 4th electrode 222 and infrared photosensitive layer 223 is defined.
Specifically, the material system of infrared photosensitive layer 223 is cadmium-zinc-teiluride mercury system, Al-Ga-In-As system, InGaAsP system, gallium aluminium
Any one in indium phosphorus system, indium gallium arsenic antimony system, aluminum gallium arsenide antimony system or calcium barium niobate system.Metallo-organic compound may be used
Learn gas phase (Metal-organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy (Molecular
Beam Epitaxy, MBE) etc. techniques infrared photosensitive layer film is generated on metal electrode, such as trimethyl gallium can be used
(TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl), the growth source that hydrogen phosphide (PH3) is MOCVD, form AlGaInP
Film, or can also be MBE with Ga, In, As, Sb source, Ga/Sb appropriate is set, and In/As line ratios grow indium gallium arsenic
Sb film (InGaAsSb).The pattern of infrared photosensitive layer 233 can be formed by photoetching process, specifically, infrared photosensitive thin
Photoresist is formed in film layer, photoresist is exposed using patterned mask plate, is developed, and is etched, and is formed infrared photosensitive
The pattern of layer 25.
In practical applications, the third electrode 221 in infrared detecting unit 22 can be with the signal wire with fixed current potential
Connection, the 4th electrode 222 is connect with transistor TFT2 is read, and in detection process, detection circuit can be by reading transistor
TFT2 reads the photo-signal of corresponding infrared detecting unit 22, to realize the touch function of display panel.
In embodiments of the present invention, as shown in Fig. 2, may include a switching transistor TFT1 in each sub-pixel,
To which in the production process, the reading transistor TFT2 in infrared detecting unit 22 can be with switching transistor TFT1 using identical
Manufacture craft make, the manufacture craft of infrared detecting unit 22 can be relatively easy to the manufacture craft of display panel backboard
It is compatible.
Specifically, in above-mentioned display panel provided in an embodiment of the present invention, detection circuit can be specifically used for：
The photo-signal of each infrared detecting unit is obtained by each reading transistor；
By the photo-signal of each infrared detecting unit compared with predetermined threshold value, if there is the photoelectric current more than predetermined threshold value
Signal, then the position of corresponding sub-pixel is anticipation position of touch；
Whether judge to prejudge in the corresponding photo-signal of position of touch includes biological information；If so, triggering pair
The touch control operation answered, does not otherwise trigger touch control operation.
As shown in fig. 6, during display panel is normally shown, luminescence unit 23 is emitted visible light and infrared light simultaneously,
The infrared light that infraluminescence portion 234 is emitted, a part are emitted directly toward the infrared of infrared detecting unit 22 by first electrode 231
Photosensitive layer 223, to form Primary photocurrent signal in infrared detecting unit 22, another part goes out by second electrode 232
It penetrates, when user's finger (H i.e. in figure) touch display screen, the infrared light being emitted by second electrode 232 is reflected to again
Inside display panel, it is emitted directly toward infrared photosensitive layer or the directive photosensitive layer after reflecting layer 24 is reflected, to be added significantly to
Photo-signal in infrared detecting unit 22, detection electric current can by monitor infrared detecting unit 22 photo-signal come
Judge position of touch.
Detection circuit is connect with the reading transistor electric signal in each sub-pixel, so as to be read by each reading transistor
Take the photo-signal of each infrared detecting unit.When user does not have touch display screen, photo-signal that detection circuit detects
It is caused by being emitted directly toward the light of infrared detecting unit by infraluminescence portion, it, can be by infrared hair when user's touch display screen
Light portion is from the infrared light reflection that the display surface of display panel is emitted to infrared detecting unit, to increase photo-signal, detection
Circuit is by the way that photo-signal compared with predetermined threshold value, the size of predetermined threshold value can be arranged according to actual conditions, work as light
Current signal is more than predetermined threshold value, then it represents that proportionality increment has occurred in photo-signal, then the position of corresponding sub-pixel can
It can be touched by user's finger, the position of corresponding sub-pixel can be set to anticipation position of touch.
In order to avoid showing that illumination region brightness change or other external objects reflect infrared light to infrared in display unit
Probe unit, caused by photo-signal change, detection circuit also need to by detect photo-signal in whether include life
Object characteristic information carries out In vivo detection, such as caused by may determine that and whether including blood flow flowing or heartbeat in photo-signal
Frequency variation signal, or using the refractive index of finger skin, extinction coefficient and without the signal difference between life entity, to detect
Whether touch sources are live bodies.If it is determined that the corresponding photo-signal of anticipation position of touch includes biological information, that is,
It says, touch sources are live bodies, then set out corresponding touch control operation, otherwise, even if touch control operation will not be set out, to improve touch-control
The accuracy of function prevents from causing the variation of photo-signal because of display panel brightness change or other factors, leads to maloperation.
Second aspect, is based on same inventive concept, and the embodiment of the present invention additionally provides a kind of making of above-mentioned display panel
Method.Since the principle that the production method solves the problems, such as is similar to above-mentioned display panel, the implementation of the production method can be with
Referring to the implementation of above-mentioned display panel, overlaps will not be repeated.
The production method of above-mentioned display panel provided in an embodiment of the present invention, as shown in fig. 7, may include：
S301, each infrared detecting unit is formed on underlay substrate；
S302, film layer forms the figure of insulating medium layer where infrared detecting unit；
S303, each first electrode is formed on insulating medium layer；
S304, the film layer where first electrode are respectively formed layer and respectively show illumination region and each infraluminescence portion, and aobvious
Film layer where showing illumination region is to be stacked with film layer where infraluminescence portion；
S305, each second electrode is formed on each display illumination region and each infraluminescence portion, obtained structure can join
According to Fig. 2.
The production method of display panel provided in an embodiment of the present invention integrates the luminous list in infraluminescence portion by formation
Member, and infraluminescence portion is stacked with display illumination region and infrared detecting unit is stacked with luminescence unit, thus,
Infrared detecting unit and infraluminescence portion will not occupy the aperture opening ratio of pixel, improve the resolution ratio of display screen.Further, since aobvious
Show that illumination region shares first electrode and second electrode with infraluminescence portion, thus during display panel is normally shown, simultaneously
It can be determined and be touched according to the photo-signal of infrared detecting unit with exiting infrared light line, when user's touch display screen
Position, touch control detection precision are higher.
In above-mentioned steps S301, the material system of the infrared photosensitive layer in infrared detecting unit is cadmium-zinc-teiluride mercury system, gallium aluminium
Any one in indium arsenic system, InGaAsP system, AlGaInP-series, indium gallium arsenic antimony system, aluminum gallium arsenide antimony system or calcium barium niobate system.It can
It is infrared to be generated on metal electrode using techniques such as metallo-organic compound chemical gaseous phase (MOCVD), molecular beam epitaxies (MBE)
Photosensitive layer film.The pattern of infrared photosensitive layer may be used photoetching process and be formed.During making infrared detecting unit, the
Three electrodes and the 4th electrode may be used same patterning processes and make, if the material phase in reflecting layer and third electrode and the 4th electrode
Together, then same patterning processes may be used in third electrode, the 4th electrode and reflecting layer；Otherwise, reflecting layer can be fabricated separately.
In step s 302, silicon nitride (SiNx), silica (SiO may be used in insulating medium layer2), alundum (Al2O3)
(Al2O3), the inorganic material such as zinc oxide (ZnO) make, chemical vapor deposition may be used or sputtering forms the insulation that thickness is d
Layer film using gray level mask plate, and uses photoetching process, forms the layer pattern of respective pixel.
After above-mentioned steps S302, can also include：Form pixel defining layer.As shown in Fig. 2, pixel defining layer 26 is used
In each sub-pixel of separation.
It can be specifically included in above-mentioned steps S304：Hole is formed on the surface of first electrode by a patterning processes to note
The figure for entering layer is formed the figure of hole transmission layer by a patterning processes on the surface of hole injection layer, stacks gradually shape
At display luminescent layer (such as red light emitting layer or green light emitting layer or blue light-emitting layer), hole blocking layer, electron transfer layer, electricity
Sub- implanted layer, charge generating layers, hole transmission layer, infraluminescence layer, hole blocking layer, electron transfer layer, electron injecting layer,
Two electrode patterns, to form the structure of organic electroluminescence device.In the specific implementation, each organic film in display unit
The modes such as hot evaporation, inkjet printing or laser transfer may be used to realize.
After step S305, can also include：Encapsulated layer 29 is prepared, as shown in Figure 6.
In addition, before above-mentioned steps S301, can also include：Switch crystalline substance is formed on underlay substrate by patterning processes
Body pipe TFT1 and reading transistor TFT2.In the production process, the source S 1 and drain D 1 in switching transistor TFT1, and read
It takes source S 2 and drain D 2 in transistor TFT2 that same patterning processes may be used to make, the grid in switching transistor TFT1
Same patterning processes making may be used in S1 and the grid S2 read in transistor TFT2.
As shown in Figure 2 and Figure 6, in the production process, can also include：Make the 1 place film of grid G for the TFT1 that insulate
First insulating layer 27 of layer and the 221 place film layer of third electrode of infrared detecting unit 22, and make for insulating TFT1's
The second insulating layer 28 of 1 place film layer of grid G and the 1 place film layer of source S of TFT1.
Specifically, as shown in figure 3, each pixel 10 may include three sub-pixels；The corresponding insulation of each sub-pixel is situated between
The thickness of matter layer is respectively d1、d2And d3, and d1＞ d2＞ d3；
Above-mentioned steps S302, as shown in figure 8, can specifically include：
S401, thickness is formed as the insulating medium layer 25 of d in the film layer where infrared detecting unit, and insulating
Photoresist layer 500 is formed on dielectric layer 25, as illustrated in fig. 9；
S402, photoresist layer 500 is patterned, region A1, is fully retained in the photoresist for obtaining photoresist layer 500
One photoresist half retains half reservation region A3 of region A2, the second photoresist and photoresist completely removes region A4；First photoetching
The thickness that glue half retains photoresist layer in the A2 of region is more than the thickness that the second photoresist half retains photoresist layer in the A3 of region, such as schemes
Shown in 9b；Specifically, gray level mask plate may be used to be exposed photoresist layer, develop, to obtain the pattern of photoresist layer.
The insulating medium layer that region A1 corresponds to non-pixel areas is fully retained in photoresist, and half reservation region A2 of the first photoresist, which corresponds to, to be waited for
Insulating medium layer in the red sub-pixel of formation, the second photoresist half retain region A3 and correspond to green sub-pixels to be formed
In insulating medium layer, photoresist completely removes region A4 corresponding to the insulating medium layer in blue subpixels.
S403, first time etching technics is carried out to insulating medium layer 25, to remove d2-d3The insulating medium layer 25 of thickness, such as
Shown in Fig. 9 c, it is not photo-etched the covering of glue-line 500 due to only having photoresist to completely remove the insulating medium layer 25 in the A4 of region, because
And the insulating medium layer 25 in only region A4 is etched；
S404, the corresponding photoresist layers 500 of half reservation region A3 of the second photoresist of removal as shown in figure 9d specifically, can
To remove the photoresist layer 500 in half reservation region A3 of the second photoresist using cineration technics；
S405, second of etching technics is carried out to insulating medium layer 25, to remove d1-d2The insulating medium layer 25 of thickness, such as
Shown in Fig. 9 e, at this point, the insulating medium layer 25 only in region A3 and region A4 is not photo-etched the covering of glue-line 500, thus, only
There is the insulating medium layer 25 in region A3 and region A4 to be etched；
S406, the corresponding photoresist layers 500 of half reservation region A2 of the first photoresist of removal as shown in figure 9f specifically, can
To remove the photoresist layer 500 in half reservation region A2 of the first photoresist using cineration technics；
S407, third time etching technics is carried out to insulating medium layer 25, to remove d-d1The insulating medium layer 25 of thickness, such as
Shown in Fig. 9 g, at this point, region A2, region A3 and region A4 are not photo-etched the covering of glue-line 500, thus, region A2, region
Insulating medium layer 25 in A3 and region A4 can be etched；
The corresponding photoresist layers 500 of region A1 are fully retained in S408, removal photoresist, obtain the structure as shown in Fig. 9 h.
Region A1 is fully retained for photoresist, since in etching process three times, region A1 is photo-etched glue-line 500 and covers
Lid, thus the insulating medium layer 25 in the A1 of region is not etched, thus after step S408, the dielectric in the A1 of region
The thickness of layer 25 is still d；Region A2 is retained for the first photoresist half, since the photoresist layer 500 in the A2 of region is in step
It is removed in S406, the third time etching in only step S407 eliminates d-d in the A2 of region1The insulating medium layer 25 of thickness,
Thus, after step S408, the thickness of the insulating medium layer 25 in the A2 of region is d- (d-d1)=d1；For the second photoresist half
Retain region A3, since the photoresist layer 500 in the A3 of region removes in step s 404, second in step S405
D is eliminated in etching technics1-d2The insulating medium layer 25 of thickness, third time etching in step S 407 eliminate in the A3 of region
d-d1The insulating medium layer 25 of thickness, thus, after step S408, the thickness of the insulating medium layer 25 in the A3 of region is d-
(d1-d2)-(d-d1)=d2；Region A4 is completely removed for photoresist, due to the photoresist layer in step S402 time domains A4
500 just have been removed, thus, the insulating medium layer 25 in etching technics in the A4 of region is etched three times, thus, step
After S408, the thickness of the insulating medium layer 25 in the A4 of region is d- (d2-d3)-(d1-d2)-(d-d1)=d3。
The third aspect is based on same inventive concept, and the embodiment of the present invention additionally provides a kind of display device, including above-mentioned aobvious
Show panel, which can be applied to mobile phone, tablet computer, television set, display, laptop, Digital Frame, leads
Navigate any products or component with display function such as instrument.The principle solved the problems, such as due to the display device and above-mentioned display panel
It is similar, therefore the implementation of the display device may refer to the implementation of above-mentioned display panel, overlaps will not be repeated.
Display panel, its production method and display device provided in an embodiment of the present invention, hair is integrated in by infraluminescence portion
In light unit, and infraluminescence portion is stacked with display illumination region and infrared detecting unit is stacked with luminescence unit,
Thus, infrared detecting unit and infraluminescence portion will not occupy the aperture opening ratio of pixel, improve the resolution ratio of display screen.In addition,
Since display illumination region and infraluminescence portion share first electrode and second electrode, thus process is normally shown in display panel
In, while can be with exiting infrared light line, it, can be true according to the photo-signal of infrared detecting unit when user's touch display screen
Determine touch location, touch control detection precision is higher.Moreover, by the way that reflecting layer is arranged, reflecting layer is made to constitute microcavity knot with second electrode
The light of structure, luminescence unit outgoing can reflect between reflecting layer and second electrode, achieve the effect that resonance enhances, to carry
The light extraction efficiency and brightness delivery efficiency of the visible light of high luminescence unit outgoing, enhance display effect, it is also possible to improve
The intensity of the infrared light of luminescence unit outgoing, improves the precision of touch control detection.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of display panel, which is characterized in that including：Underlay substrate, being arranged in array on the underlay substrate
Multiple pixels and detection circuit；Wherein,
Each described pixel includes multiple sub-pixels；The sub-pixel, including：Infrared acquisition on the underlay substrate
Unit, and positioned at the infrared detecting unit away from the luminescence unit of the underlay substrate side；
The luminescence unit, including：First electrode on the underlay substrate is located at the first electrode and deviates from the lining
The second electrode of substrate side, and between the first electrode and the second electrode and be stacked display hair
Light portion and infraluminescence portion；
The detection circuit is electrically connected with each infrared detecting unit, for the photoelectric current according to each infrared detecting unit
Signal judges touch location.
2. display panel as described in claim 1, which is characterized in that the sub-pixel further includes：Positioned at the infrared acquisition
Reflecting layer of the unit close to the underlay substrate side；
The infrared detecting unit and orthographic projection of the reflecting layer on the underlay substrate are least partially overlapped.
3. display panel as claimed in claim 2, which is characterized in that the sub-pixel further includes：Positioned at the first electrode
With the insulating medium layer between the infrared detecting unit；
In each described pixel, the thickness of the corresponding insulating medium layer of each sub-pixel is different.
4. display panel as claimed in claim 3, which is characterized in that in each described pixel, the insulating medium layer
Thickness increase with the increase of the wavelength of the corresponding sub-pixel emergent ray.
5. display panel as described in claim 1, which is characterized in that the luminescence unit further includes：It is sent out positioned at the display
Charge generating layers between light portion and the infraluminescence portion.
6. display panel as described in claim 1, which is characterized in that the infrared detecting unit, including：Third electrode, the
Four electrodes, and the infrared photosensitive layer between the third electrode and the 4th electrode；
The sub-pixel further includes the reading transistor being electrically connected with the 4th electrode；The detection circuit passes through the reading
Transistor reads the photo-signal of the corresponding infrared detecting unit.
7. display panel as claimed in claim 6, which is characterized in that the detection circuit is specifically used for：
Pass through each photo-signal for reading transistor and obtaining each infrared detecting unit；
By the photo-signal of each infrared detecting unit compared with predetermined threshold value, if there is the light more than the predetermined threshold value
Current signal, then the position of the corresponding sub-pixel is anticipation position of touch；
Judge in the corresponding photo-signal of the anticipation position of touch whether to include biological information；If so, triggering pair
The touch control operation answered, does not otherwise trigger touch control operation.
8. a kind of production method of such as claim 1~7 any one of them display panel, which is characterized in that including：
Each infrared detecting unit is formed on underlay substrate；
The figure of insulating medium layer is formed in film layer where the infrared detecting unit；
Each first electrode is formed on the insulating medium layer；
It is respectively formed layer in film layer where the first electrode and respectively shows illumination region and each infraluminescence portion, and the display
Film layer where illumination region is to be stacked with film layer where the infraluminescence portion；
Each second electrode is formed on each display illumination region and each infraluminescence portion.
9. production method as claimed in claim 8, which is characterized in that each described pixel includes three sub-pixels；Each institute
The thickness for stating the corresponding insulating medium layer of sub-pixel is respectively d1、d2And d3, and d1＞ d2＞ d3；
The film layer where the infrared detecting unit forms the figure of insulating medium layer, including：
The insulating medium layer that thickness is d is formed in the film layer where the infrared detecting unit, and is situated between in the insulation
Photoresist layer is formed on matter layer；
The photoresist layer is patterned, region, the first photoresist is fully retained in the photoresist for obtaining the photoresist layer
Half, which retains region, half reservation region of the second photoresist and photoresist, completely removes region；First photoresist, half reserved area
The thickness of photoresist layer is more than the thickness that second photoresist half retains photoresist layer in region in domain；
First time etching technics is carried out to the insulating medium layer, to remove d2-d3The insulating medium layer of thickness；
It removes second photoresist half and retains the corresponding photoresist layer in region；
Second of etching technics is carried out to the insulating medium layer, to remove d1-d2The insulating medium layer of thickness；
It removes first photoresist half and retains the corresponding photoresist layer in region；
Third time etching technics is carried out to the insulating medium layer, to remove d-d1The insulating medium layer of thickness；
It removes the photoresist and the corresponding photoresist layer in region is fully retained.
10. a kind of display device, which is characterized in that including：Such as claim 1~7 any one of them display panel.
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