CN110350000A - A kind of display screen and electronic equipment - Google Patents
A kind of display screen and electronic equipment Download PDFInfo
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- CN110350000A CN110350000A CN201910436413.7A CN201910436413A CN110350000A CN 110350000 A CN110350000 A CN 110350000A CN 201910436413 A CN201910436413 A CN 201910436413A CN 110350000 A CN110350000 A CN 110350000A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The embodiment of the present application provides a kind of display screen and electronic equipment, is related to field of display technology, for solving the problems, such as that depth camera occupies the larger display area of electronic equipment.The display screen includes display panel.Display panel includes multiple first pixel units and collimating structure.Multiple first pixel units, and each first pixel unit includes multiple display sub-pixels for issuing different visible light and at least one is used to issue the projection sub-pixel of infrared light.Collimating structure is set to the light emission side of display panel, the infrared light issued for converging projection sub-pixel.
Description
Technical field
This application involves field of display technology more particularly to a kind of display screens and electronic equipment.
Background technique
As the development of biological identification technology can be intrinsic to human body using depth scanning technique and image processing techniques
Physiological characteristic, such as face characteristic identified.
The depth information of characteristic portion each in face can be adopted using the depth camera of depth scanning technique
Collection obtains depth image, and is matched to collected depth image with original image by image processing techniques, to reach
The purpose of recognition of face.
In order to which above-mentioned depth camera is set in electronic equipment, such as mobile phone, it usually needs stayed on mobile phone screen
Above-mentioned depth camera is placed in a part of region out.Since depth camera position can not perform image display, so meeting
Reduce the screen accounting (ratio of the effective display area domain of display screen and entire display screen) of mobile phone.
Summary of the invention
The embodiment of the present application provides a kind of display screen and electronic equipment, for solve depth camera occupy electronic equipment compared with
The problem of big display area.
The one side of the embodiment of the present application provides a kind of display screen.The display screen includes display panel.Display panel includes
Multiple first pixel units and collimating structure.Multiple first pixel units, and each first pixel unit includes multiple is used for
Issue different visible light display sub-pixel and at least one be used to issue the projection sub-pixel of infrared light.Collimating structure is set
It is placed in the light emission side of display panel, the infrared light issued for converging projection sub-pixel.It is used for by being arranged in display panel
Issue the projection sub-pixel of infrared light, can by by multiple infrared projectors for constituting of projection sub-pixels using embedding by the way of,
It is embedded into display panel.In this case, it is possible to during making each display sub-pixel of display panel, in completion
State the preparation of infrared projector.In the case, it is integrated in display panel relative to by the VCSEL for being used to issue infrared light
For scheme, on the display panel of display screen provided by the embodiments of the present application, without opening up the region of a part of non-display area,
For putting above-mentioned VCSEL.So, it can replace by the infrared projector being made of multiple projection sub-pixels above-mentioned
VCSEL, to achieve the purpose that improve display screen accounting.In addition, according to the effective resolution of display screen, i.e., in display panel
The resolution ratio that all display sub-pixels provide can increase the quantity of the setting projection sub-pixel in display panel, to improve
Infrared ray projects the quantity in source, enables more infrared rays to be incident to testee, such as face, reaches and improve 3D depth
The purpose of scanning accuracy.So, it is not necessary that the infrared ray progress optical reproduction for issuing to VCSEL is arranged in display screen
DOE, so as to reduce the cost of manufacture of display screen.In addition, further including being set to display panel light emission side in the display screen
Collimating structure.Collimation processing can be carried out to the infrared light that projection sub-pixel issues by collimating structure, reduce infrared light
Light loss effectively promotes infrared light utilization efficiency.
Optionally, multiple visible light illuminator parts；One visible light illuminator part is located in a display sub-pixel.It is multiple
Infrared light-emitting device.One infrared light-emitting device is located in a projection sub-pixel.Above-mentioned visible light illuminator part and infrared
Light luminescent device can be realized self-luminous.
Optionally, it is seen that light luminescent device, infrared light-emitting device are Organic Light Emitting Diode.Display panel further includes pixel
Define layer.It is provided with multiple openings in pixel defining layer, there is barricade between two neighboring opening；One opening is located at one and shows
In the luminous zone for showing sub-pixel or a projection sub-pixel.The organic luminous layer of one Organic Light Emitting Diode is located at one
In opening.So as to which the light emitting diode for being used to issue infrared light to be set to, project in the luminous zone of sub-pixel.
Optionally, display panel further includes the thin-film encapsulation layer for covering Organic Light Emitting Diode.Organic Light Emitting Diode
Light emission side is close to thin-film encapsulation layer, and collimating structure is located at the side surface that thin-film encapsulation layer deviates from pixel defining layer, thus by quasi-
Straight structure setting is in the outer surface of thin-film encapsulation layer, so that the light that Organic Light Emitting Diode issues is emitted from thin-film encapsulation layer
Afterwards, collimation processing is carried out into collimating structure.
Optionally, thin-film encapsulation layer includes multilayer inorganic encapsulated layer and multilayer organic encapsulation layer；Inorganic encapsulated layer and organic
Encapsulated layer is arranged alternately.Collimating structure is structure as a whole with the inorganic encapsulated layer in thin-film encapsulation layer farthest away from pixel defining layer.
So, the preparation of collimating structure can be completed when outermost one layer of inorganic encapsulated layer in making thin-film encapsulation layer.
Optionally, display panel further includes the cover board for covering Organic Light Emitting Diode, and around the viewing area of display panel
The sealant of setting in one week.Cover board is in contact with sealant.Wherein, the first pixel unit is located in viewing area.Organic light emission two
The light emission side of pole pipe is close to cover board, and collimating structure is between cover board and Organic Light Emitting Diode.
Optionally, display panel further includes the underlay substrate for carrying pixel defining layer.The light emission side of Organic Light Emitting Diode
Close to underlay substrate, collimating structure is located at the side surface that underlay substrate deviates from pixel defining layer.So as in organic light emission
When diode shines the bottom of for, the light that above-mentioned collimating structure can issue Organic Light Emitting Diode carries out collimation processing.
Optionally, it is seen that light luminescent device, infrared light-emitting device are micro-led.Display panel includes silicon substrate
Plate, multiple micro-led upside-down mountings are on silicon substrate, and array arrangement.
Optionally, display panel further includes a plurality of first electrode line and a plurality of second electrode line.Wherein, a plurality of first electrode
Line is located at multiple with a line, micro-led first electrode electrical connection along first direction.A plurality of second electrode
Line, and first electrode line insulation set, and in a second direction with it is multiple positioned at same row, multiple micro-led the
The electrical connection of two electrodes.Wherein, first direction and second direction are intersected.Signal can be provided to first electrode line line by line, with line by line
Micro-led first electrode is gated.After a line micro-led first electrode gating, simultaneously
There is provided signal to each second electrode line, drive above-mentioned a line it is micro-led carry out it is luminous.So, in an image
In the time of frame, multiple array arrangements it is micro-led can carry out line by line it is luminous.
Optionally, display panel further includes the first insulating layer and second insulating layer.First insulating layer is located at miniature luminous two
Between pole pipe and first electrode line.On the first insulating layer, and the position of corresponding micro-led first electrode is arranged
PTH, so that first electrode line is electrically connected with each micro-led first electrode of same a line respectively by each PTH
It connects.Second insulating layer is between a plurality of first electrode line and a plurality of second electrode line.It insulate in second insulating layer and first
On layer, and PTH is arranged in the position of corresponding micro-led second electrode, so that second electrode line passes through each PTH points
It is not electrically connected with each micro-led second electrode of same a line.
Optionally, collimating structure includes multiple lenticules.The luminous zone of lenticule covering projection sub-pixel, and lenticule
Projecting surface deviates from display panel.The infrared light issued of the OLED in projection sub-pixel is converged by the projecting surface of lenticule
It is poly-, achieve the purpose that light collimates.
Optionally, collimating structure further includes light transmission film.Light transmission film between lenticule and display panel, and with it is micro-
Lens are structure as a whole.It, can be in the upper of thin-film encapsulation layer after having made above-mentioned thin-film encapsulation layer by thin film encapsulation technology
Surface forms layer of transparent resin layer, is then imprinted using nano-imprint process to the transparent resin layer, thus on being formed
State collimating structure.Alternatively, light transmission film can also be formed using nano-imprint process, and it is structure as a whole with the light transmission film
Multiple lenticules.Next, the light transmission film with multiple lenticules to be attached to the upper surface of thin-film encapsulation layer.
Optionally, collimating structure includes light transmission film and multiple collimation through-holes through light transmission film.At least one is quasi-
Clear opening is in the orthographic projection for projecting sub-pixel, in the luminous zone of projection sub-pixel.Since filling is free inside collimation through-hole
Gas, air its for light transmission film be optically thinner medium.Therefore the refractive index of medium (i.e. air) is less than in collimation through-hole
The refractive index of light transmission film.In the case, it projects in sub-pixel, the infrared light that the organic luminous layer of OLED issues is incident to standard
After in clear opening, it can be totally reflected in the sidewall surfaces of the collimation through-hole, be incident in light transmission film to reduce light
Probability reduces light loss, and most of light is emitted upwards by the aperture of collimation through-hole, achievees the purpose that light collimates.
Optionally, transmittance section is filled in collimation through-hole.The refractive index of the transmittance section, less than the refractive index of light transmission film.
So that after the infrared light that the organic luminous layer of OLED issues in projection sub-pixel is incident to transmittance section, it can be in the light transmission
The interface of portion and light transmission film is totally reflected, to reduce the probability that light is incident in light transmission film, reaches light standard
Straight purpose.
Optionally, display panel further includes multiple, and the second pixel unit for display.Second pixel unit only wraps
It includes multiple for issuing the display sub-pixel of different visible light.The quantity and the first pixel of sub-pixel are shown in second pixel unit
Show that the quantity of sub-pixel is identical in unit.So, each projection sub-pixel as infrared projection source is only in viewing area
In a part of region in domain with distribution, so as to reduce influence of the projection sub-pixel to display panel resolution ratio.
The another aspect of the embodiment of the present application provides a kind of electronic equipment, including shell, and as described above any one
Kind display screen.The display screen is installed on shell.Above-mentioned electronic equipment has identical with the display screen that previous embodiment provides
Technical effect, details are not described herein again.
Detailed description of the invention
Fig. 1 is some embodiments of the present application, the structural schematic diagram of a kind of electronic equipment provided；
Fig. 2 is the structural schematic diagram of display screen in Fig. 1；
Fig. 3 a is a kind of structural schematic diagram of display panel in Fig. 2；
Fig. 3 b is another structural schematic diagram of display panel in Fig. 2；
Fig. 3 c is another structural schematic diagram of display panel in Fig. 2；
Fig. 4 is a kind of structural schematic diagram of OLED provided by the embodiments of the present application；
Fig. 5 a is some embodiments of the present application, a kind of structural schematic diagram of the display panel provided；
Fig. 5 b is the structural schematic diagram of TFT backplate in Fig. 5 a；
Fig. 5 c is the luminous zone of each sub-pixel and the structural schematic diagram of non-light-emitting area in Fig. 5 a；
Fig. 5 d is the O-O shown in Fig. 5 a, carries out a kind of schematic diagram for display panel that cutting obtains from the top down；
Fig. 5 e is the structural schematic diagram of pixel defining layer in Fig. 5 d；
Fig. 5 f be pixel defining layer opening in be provided with the structural schematic diagram of organic luminous layer；
Fig. 6 a is some embodiments of the present application, the structural schematic diagram of another display panel provided；
Fig. 6 b is some embodiments of the present application, a kind of sectional view of the display screen provided；
Fig. 6 c is the structural schematic diagram of thin-film encapsulation layer in Fig. 6 b；
Fig. 7 a is some embodiments of the present application, a kind of structural schematic diagram of the display screen provided；
Fig. 7 b is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Fig. 7 c is some embodiments of the present application, the sectional view of another display screen provided；
Fig. 7 d is some embodiments of the present application, the sectional view of another display screen provided；
Fig. 7 e is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Fig. 8 a is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Fig. 8 b is some embodiments of the present application, the sectional view of another display screen provided；
Fig. 8 c is some embodiments of the present application, the sectional view of another display screen provided；
Fig. 9 a is some embodiments of the present application, the sectional view of another display screen provided；
Fig. 9 b is some embodiments of the present application, the sectional view of another display screen provided；
Figure 10 is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Figure 11 a is some embodiments of the present application, the sectional view of another display screen provided；
Figure 11 b is some embodiments of the present application, the sectional view of another display screen provided；
Figure 12 is the overlooking structure figure of sealant in Figure 11 a or Figure 11 b；
Figure 13 a is some embodiments of the present application, a kind of structural schematic diagram of the display panel provided；
Figure 13 b is the structural schematic diagram of micro LED in Figure 13 a；
Figure 13 c is the upside-down mounting schematic diagram of micro LED shown in Figure 13 b；
Figure 14 a is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Figure 14 b is some embodiments of the present application, another structural schematic diagram of the display screen provided；
Figure 15 a is some embodiments of the present application, and the structure of the infrared projection provided, acquisition and calculation processing system is shown
It is intended to；
Figure 15 b is some embodiments of the present application, and the display screen provided carries out a kind of schematic diagram of depth detection；
Figure 15 c is some embodiments of the present application, and the display screen provided carries out another schematic diagram of depth detection；
Figure 16 is some embodiments of the present application, a kind of structural schematic diagram of the display panel provided.
Appended drawing reference:
01- electronic equipment；10- display screen；11- center；12- shell；100- display panel；101- collimating structure；1011-
Lenticule；1012- light transmission film；1013- collimates through-hole；The transmittance section 1014-；The first pixel unit of 21-；210- shows sub- picture
Element；211- projects sub-pixel；30-OLED；300- organic luminous layer；301- anode；302- cathode；3021- cathode layer；303- is empty
Cave transport layer；304- hole injection layer；305- electron transfer layer；306- electron injecting layer；40-TFT backboard；403- pixel driver
Circuit；41- pixel defining layer；401- opening；402- barricade；42- underlay substrate；50- thin-film encapsulation layer；501- inorganic thin film
Layer；502- organic thin film layer；51- polaroid；52- cooling fin；53- cover board；54- sealant；60-micro LED；601- first
Electrode；602- second electrode；603- epitaxial layer；604- substrate；61- silicon substrate；62- first electrode line；63- second electrode line；
The first insulating layer of 64-；65- second insulating layer；70- infrared projector；71- imaging sensor；72- control, computing unit；80-
VCSEL。
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application is described, and is shown
So, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.
Hereinafter, term " first ", " second " etc. are used for description purposes only, it is not understood to indicate or imply relatively important
Property or implicitly indicate the quantity of indicated technical characteristic.The feature for defining " first ", " second " etc. as a result, can be expressed
Or implicitly include one or more of the features.In the description of the present application, unless otherwise indicated, the meaning of " multiple "
It is two or more.
In addition, the directional terminologies such as "upper", "lower" are that the orientation put relative to the component signal in attached drawing is come in the application
Definition, it should be understood that, these directional terminologies are opposite concepts, they be used for relative to description and clarification, can
The variation in the orientation placed with component in reference to the accompanying drawings and correspondingly change.
The embodiment of the present application provides a kind of electronic equipment, which can be mobile phone, display, tablet computer, vehicle
It carries the intelligent displays such as the product and smartwatch, Intelligent bracelet with display interface such as computer and dresses product.The application is implemented
Example does not do the concrete form of above-mentioned electronic equipment specifically limited.Following embodiment is with as shown in Figure 1 for convenience of explanation
Electronic equipment 01 be the illustration that carries out for mobile phone.
As shown in Figure 1, above-mentioned electronic equipment 01, mainly include display screen 10, for carry the center 11 of display screen 10 with
And shell 12.Display screen 10 is installed on shell 12 by center 11.Above-mentioned center 11 can be set away from the side of display screen 10
Set central processing unit (Central Processing Unit, CPU).
The structure of above-mentioned display screen 10 is illustrated below.
The display screen 10 includes as shown in Fig. 2, including display panel 100 and collimating structure 101.
As shown in Fig. 2, above-mentioned display panel 100 includes multiple first pixel (pixel) units 21.Each first pixel list
Member 21 include at least one be used to issue visible light display sub-pixel (sub pixel) 210 and at least one for issuing
The projection sub-pixel 211 of infrared light.
It may include three aobvious in above-mentioned first pixel unit 21 as shown in Figure 3a in some embodiments of the present application
Show sub-pixel 210, the visible light issued respectively is red (red, R) light, indigo plant (green, G) light and blue light (blue, B).
Alternatively, as shown in Figure 3b, above three shows that the visible light that sub-pixel 210 issues respectively is cyan (cyan, C)
Light, magenta (Magenta, M) light and yellow light (yellow, Y).
It, as shown in Figure 3c, can be in above-mentioned first pixel unit 21 or in other embodiments of the application
Including four display sub-pixels 210, the visible light issued respectively is feux rouges, green light, blue light and white (white, W) light.
Or first include four display sub-pixels 210 in pixel unit 21, respectively sending feux rouges, green light, blue light with
And the visible light of green light.
The application combines without limitation the number and luminescent color that sub-pixel 210 is shown in the first pixel unit 21.
On this basis, it as shown in Fig. 2, collimating structure 101 is set to the light emission side of display panel 100, is thrown for converging
Penetrate the infrared light of the sending of sub-pixel 211.There is the probability scattered so as to reduce the infrared light that projection sub-pixel 211 issues,
Reduce the light loss of infrared light.
In addition, in order to enable above-mentioned display sub-pixel 210 can issue visible light, in some embodiments of the present application,
Display panel 100 further includes multiple visible light illuminator parts.Each visible light illuminator part and a display sub-pixel 210 are opposite
It answers, and each visible light illuminator part is located in display sub-pixel 210 corresponding with the visible light illuminator part, so that aobvious
Show that panel 100 can be realized self-luminous, no setting is required is arranged backlight.
In addition, in order to enable above-mentioned projection sub-pixel 211 can issue infrared light, in some embodiments of the present application,
Display panel 100 further includes multiple infrared light-emitting devices.Each infra red light emitter part and a Transmission sub-pixel 211 are opposite
It answers, and each infrared light-emitting device is located in projection sub-pixel 211 corresponding to the infra red light emitter part.
The set-up mode to above-mentioned visible light illuminator part and infrared light-emitting device in display panel 100 carries out below
It illustrates.
Example one
In this example, positioned at the visible light illuminator part shown in sub-pixel 210 and it is located in projection sub-pixel 211
Infrared light-emitting device is Organic Light Emitting Diode (organic light emitting diode, OLED).In the case, it shows
Show panel 100 be active matrix organic light-emitting diode (active matrix organic light emitting diode,
AMOLED) display panel.
As shown in figure 4, above-mentioned OLED30 includes organic luminous layer 300, the anode positioned at 300 two sides of organic luminous layer
(anodic, a) 301 and cathode (cathode, c) 302.
In some embodiments of the present application, the material for constituting anode 301 can be metal material, such as aluminium (Al), manganese
(Mg) etc..The material for constituting cathode 302 can be transparent conductive material, for example, tin indium oxide (indium tin oxide,
ITO), indium zinc oxide (indium zinc oxide, IZO).In the case, 302 light transmission of cathode, the light transmittance of anode 301 is very
It is small, therefore the light that OLED30 is issued is emitted by the side where cathode 302.At this point, OLED30 is top emission type luminescent device.
Alternatively, the material for constituting anode 301 can be above-mentioned electrically conducting transparent material in other embodiments of the application
Material；The material for constituting cathode 302 is above-mentioned metal material.In the case, 301 light transmission of anode, the light transmittance of cathode 302 is very
It is small, therefore the light that OLED30 is issued is emitted by the side where anode 301.At this point, OLED30 is bottom emitting type luminescent device.
Based on this, after applying anode 301 from voltage to 300 two sides of organic luminous layer and cathode 302, anode 301 and cathode
Carrier in 302 meets in organic luminous layer 300, and inspires photon, so that organic luminous layer 300 shines.This
When, above-mentioned OLED30 shines, and the display panel 100 with multiple above-mentioned OLED30 carries out picture and shows.
Wherein, in same first pixel unit 21, organic hair of the visible light illuminator part in difference display sub-pixel 210
The material of photosphere 300 is different, so that the visible light illuminator part in above-mentioned different display sub-pixels 210 issues color
Different visible lights, such as feux rouges, green light or blue light.
The material for projecting the organic luminous layer 300 of the infrared light-emitting device in sub-pixel 211, can be in the organic light emission
Under the electric field action that the anode 301 and cathode 302 of 300 two sides of layer generate, infrared light is issued.
In addition, in order to improve the probability that the carrier in anode 301 and cathode 302 meets in organic luminous layer 300, with
Improve the luminous efficiency of OLED30.Above-mentioned OLED30 is as shown in figure 4, further include hole transmission layer 303, hole injection layer 304, electricity
Sub- transmitting layer 3 05, electron injecting layer 306.
Wherein, hole transmission layer 303, hole injection layer 304 are located at organic luminous layer 300 towards 301 side of anode, and according to
Secondary close anode 301.Electron transfer layer 305, electron injecting layer 306 are located at organic luminous layer 300 towards 302 side of cathode, and
Successively close to cathode 302.
Based on this, in order to drive above-mentioned multiple OLED30 to shine, above-mentioned display panel 100 further includes as shown in Figure 5 a thin
Film transistor (thin film transistor, TFT) backboard 40.
TFT backplate 40 includes as shown in Figure 5 b, the pixel-driving circuit 403 of array arrangement.The pixel-driving circuit 403
Including multiple TFT and at least one capacitor.Wherein, Fig. 5 b is with pixel-driving circuit 403 for 2T1C structure, that is, includes two
The explanation carried out for TFT, such as T1 and T2 and capacitor C.
It in the case, as shown in Figure 5 c, can be in the display sub-pixel 210 of display panel 100 or projection sub-pixel 211
It is divided into the non-light-emitting area B at 403 place luminous zone A and pixel-driving circuit where OLED30.
In addition, as shown in Figure 5 a, the anode 301 of each OLED30 is spaced and is arranged at bulk in TFT backplate 40.It can
To provide independent voltage to the anode 301 of each OLED30, individually to control the light emission luminance of OLED30.
As shown in Fig. 5 d (O-O in Fig. 5 a carries out the cross-sectional view that cutting obtains to TFT backplate), the anode of each OLED
301 at least one TFT in the pixel-driving circuit 403 that is disposed below, such as the drain electrode (drain, d) of the T1 in Fig. 5 b
Electrical connection.
In addition, as fig 5d, above-mentioned display panel 100 further includes the pixel defining layer in TFT backplate 40
(pixel define layer, PDL) 41.
It is provided with multiple openings 401 in the pixel defining layer 41, there is barricade (Pillar) between two neighboring opening
402。
Above-mentioned multiple openings 401 include multiple first opening 401a and multiple second opening 401b as depicted in fig. 5e.
Each first opening 401a is corresponding with a display sub-pixel 210, and each first be open 401a be located at this
In the corresponding display sub-pixel 210 of one opening.
In the case, each visible light illuminator part is corresponding with one first opening 401a.In addition, from the above
In this example, it is seen that light luminescent device is OLED, which has above-mentioned organic luminous layer 300.In the case, such as Fig. 5 f institute
Show, it is seen that the organic luminous layer 300a of light luminescent device is located in the first opening 401a corresponding to the visible light illuminator part.
Each second opening 401b is corresponding with a projection sub-pixel 211, and each second opening 401b is located at second
It is open in projection sub-pixel 211 corresponding to 401b.
In the case, each infra red light emitter part is corresponding with one second opening 401b, and each infrared light is sent out
The organic luminous layer 300b of optical device is located in the second opening 401b corresponding to the infra red light emitter part.
Furthermore, it is possible to which two neighboring difference is shown OLED30 in sub-pixels 210 by each barricade 402 on PDL41
Organic luminous layer 300 be spaced apart, enable the luminescent color of each OLED30 independent.
Can similarly obtain, by each barricade 402 on PDL41 can also by show sub-pixel 210 in OLED30 it is organic
Luminescent layer 300 is spaced apart with the organic luminous layer 300 of OLED30 in projection sub-pixel 211.
In addition, the cathode 302 of each OLED30 usually connects identical voltage, such as voltage ELVSS.Therefore, such as Fig. 5 a
Shown, the cathode 302 of each OLED30 can be electrically connected, and be structure as a whole, and form one layer of cathode layer 3021.The cathode
The organic luminous layer 300 of 3021 all OLED30 of covering of layer.
In addition, above-mentioned TFT backplate 40 further includes underlay substrate 42.In this example, underlay substrate 42 can be for using soft
Property material, such as poly terephthalic acid class plastics (polyethylene terephthalate, PET) constitute flexible resin matrix
Plate.
In the case, above-mentioned display panel 100 can be flexible display panels.Using thin-film package (thin
Filmencapsulation, TFE) technology can be packaged the flexible display panels.Based on this, as shown in Figure 6 a, display
Panel 100 further includes the thin-film encapsulation layer 50 positioned at 3021 top of cathode layer.
As shown in Figure 6 b, thin-film encapsulation layer 50 covers each OLED30 in the display panel 100.Wherein, thin-film package
Layer 50 as fig. 6 c, including stacks, and the inorganic thin film layer 501 and organic thin film layer 502 being arranged alternately.
Organic thin film layer 502 is constituted using organic transparent material, is had certain flexibility, is enabled to thin-film package
The display panel 100 of layer 50 can be bent.Inorganic thin film layer 501 can play isolation extraneous steam, oxygen, it is avoided to enter
In OLED30, the performance of OLED30 is impacted.
In order to improve the ability that inorganic thin film layer 501 obstructs steam, oxygen, in the thin-film encapsulation layer 50, upper and lower two most
The film layer of outer layer is above-mentioned inorganic thin film layer 501.
In addition, when the OLED30 on the display panel 100 is top emission type luminescent device, i.e. the light emission side of OLED30 is close
When thin-film encapsulation layer 50, the light that OLED30 is issued is emitted by thin-film encapsulation layer 50.In the case, in order to projection sub-pixel
The light that OLED30 in 211 is issued is converged, and as shown in Figure 6 b, collimating structure 101 is located at thin-film encapsulation layer 50 away from picture
Element defines a side surface of layer 41.
In some embodiments of the present application, above-mentioned collimating structure 101 includes multiple lenticules as shown in Figure 7a
(lens) 1011, the projecting surface of lenticule 1011 deviates from display panel 100.
The luminous zone A of the lenticule 1011 covering projection sub-pixel 211, i.e., OLED30 in covering projection sub-pixel 211
Organic luminous layer 300 (as shown in Figure 6 b).So as to pass through the projecting surface of lenticule 1011 in projection sub-pixel 211
The infrared light that OLED30 is issued is converged, and achievees the purpose that light collimates.
It in the case, can be in thin-film package after having made above-mentioned thin-film encapsulation layer 50 by thin film encapsulation technology
The upper surface of layer 50 forms above-mentioned multiple spaced lenticules 1011 by inkjet printing technology.
Alternatively, layer of transparent can be made again after having made above-mentioned thin-film encapsulation layer 50 by thin film encapsulation technology
Inorganic thin film layer constitutes above-mentioned inorganic thin film layer for example, by using silicon nitride (SiON).Then, pass through dry etching (dry etch)
Technique performs etching the film layer, forms multiple spaced lenticules 1011.
Alternatively, as shown in Figure 7b, collimating structure 101 is in addition to including above-mentioned micro- in other embodiments of the application
It further include the light transmission film 1012 positioned at the light emission side surface of display panel 100 other than mirror 1011.
As shown in Figure 7 c, above-mentioned light transmission film 1012 is between lenticule 1011 and display panel 100, and and lenticule
1011 are structure as a whole.
It in the case, can be in thin-film package after having made above-mentioned thin-film encapsulation layer 50 by thin film encapsulation technology
The upper surface of layer 50 forms layer of transparent resin layer, is then imprinted using nano-imprint process to the transparent resin layer, from
And form collimating structure 101 as shown in Figure 7 c.
Alternatively, can also be one using nano-imprint process formation light transmission film 1012, and with the light transmission film 1012
Multiple lenticules 1011 of body structure.Next, the light transmission film 1012 with multiple lenticules 1011 is attached at film envelope
Fill the upper surface of layer 50.
Alternatively, when thin film encapsulation technology makes outermost one layer of inorganic thin film 501 in above-mentioned thin-film encapsulation layer 50, it can
To increase the thickness of the inorganic thin film layer 501, above-mentioned light transmission film 1012 is then formed by dry etch process again, and
Multiple lenticules 1011 positioned at 1012 upper surface of light transmission film.
In the case, above-mentioned light transmission film 1012 can be used as in thin-film encapsulation layer 50 outermost layer (most as shown in figure 7d
Far from pixel defining layer 41) one layer of inorganic thin film 501.At this point, multiple lenticules 1011 are integrated knot with the inorganic thin film 501
Structure.
It should be noted that Fig. 7 b to Fig. 7 d not only covers the sub- picture of projection with the light transmission film 1012 in collimating structure 101
The explanation carried out for OLED30 in element 211, the also OLED30 in covering display sub-pixel 210.
In other embodiments of the application, as shown in figure 7e, light transmission film 1012 only covering can project sub-pixel
OLED30 in 211, and show the light emission side of the OLED30 in sub-pixel 210, it may not need the above-mentioned light transmission film 1012 of setting.
In other embodiments of the application, as shown in Figure 8 a, above-mentioned collimating structure 101 include light transmission film 1012 with
And multiple collimation through-holes 1013 through light transmission film 1012.
Wherein, as shown in Figure 8 b, at least one collimation through-hole 1013 is located at projection in the orthographic projection of projection sub-pixel 211
In the luminous zone A of sub-pixel 211, that is, it is located in projection sub-pixel 211 in the organic luminous layer 300 of OLED30.
So, due to collimation through-hole 1013 inside be filled with air, air its for light transmission film 1012
For optically thinner medium, i.e., the refractive index n1 of medium (i.e. air) is less than the refractive index n2 of light transmission film 1012 in collimation through-hole 1013.
In the case, it projects in sub-pixel 211, in the infrared light that the organic luminous layer 300 of OLED30 issues at least
After a part is incident in collimation through-hole 1013, it can be totally reflected in the sidewall surfaces of the collimation through-hole 1013, to reduce
Light is incident to the probability in light transmission film 1012, reduces light loss, enables most of light by the hole of collimation through-hole 1013
Mouth outgoing upwards, achievees the purpose that light collimates.
In 101 pairs of projection sub-pixels 211 of collimating structure, the infrared light that the organic luminous layer 300 of OLED30 issues is carried out
In the case that the effect of collimation is certain, multiple collimation through-holes corresponding with 300 position of organic luminous layer of the same OLED30
The thickness of 1013 quantity and the light transmission film 1012 is in inverse ratio, the diameter of the collimation through-hole 1013 and the thickness of light transmission film 1012
It spends proportional.
For example, the organic luminous layer in the case where the collimating effect of collimating structure 101 is certain, with the same OLED30
The quantity of the corresponding multiple collimation through-holes 1013 in 300 positions is more, and the diameter for collimating through-hole 1013 is smaller, light transmission film 1012
Thickness it is thinner.Alternatively, the number of multiple collimation through-holes 1013 corresponding with 300 position of organic luminous layer of the same OLED30
Amount is fewer, and the diameter for collimating through-hole 1013 is bigger, and the thickness of light transmission film 1012 is thicker.
Therefore, in order to effectively reduce the thickness of display screen 10, the thickness of light transmission film 1012 in collimating structure 101 is needed to get over
It is small better, therefore it is logical appropriate can to increase multiple collimations corresponding with 300 position of organic luminous layer of the same OLED30
The quantity in hole 1013, and reduce the diameter of the collimation through-hole 1013, to guarantee that collimating structure 101 has good light collimation
Effect.
The production method of collimating structure 101 shown in Fig. 8 b can be above-mentioned thin when having been made by thin film encapsulation technology
After film encapsulated layer 50, photoresist is formed in the upper surface of the thin-film encapsulation layer 50, then by carrying out photoetching process to photoresist
(including exposure mask, exposure, developing process).When the photoresist is positive photoresist, can will be shown in photoresist by the part that light irradiates
Shadow falls, to form above-mentioned collimation through-hole 1013.Alternatively, can not will not shone by light in photoresist when the photoresist is negtive photoresist
The partial development penetrated falls, to form above-mentioned collimation through-hole 1013.
In addition, in other embodiments of the application, as shown in Figure 8 c, can also in collimation through-hole 1013 filling by
Translucent material, such as the transmittance section 1014 that inorganic translucent material silicon nitride is constituted.
The refractive index of the transmittance section 1014, less than the refractive index of light transmission film 1012.So that projection sub-pixel
After the infrared light that the organic luminous layer 300 of OLED30 issues in 211 is incident to transmittance section 1014, meeting is in the transmittance section 1014 and thoroughly
The interface of optical thin film 1012 is totally reflected, to reduce the probability that light is incident in light transmission film 1012, reaches light
The purpose of collimation.
The production method of collimating structure 101 shown in Fig. 8 c can be above-mentioned thin when having been made by thin film encapsulation technology
After film encapsulated layer 50, photoresist is formed in the upper surface of the thin-film encapsulation layer 50, then by carrying out above-mentioned photoetching to photoresist
Technique forms above-mentioned collimation through-hole 1013.Next, using chemical vapor deposition (chemical vapor deposition,
CVD) process deposits silicon nitride to form the inorganic thin film layer on covering 1012 surface of light transmission film, and is located at collimation through-hole
Transmittance section 1014 in 1013.
It should be noted that Fig. 8 a to Fig. 8 c not only covers the sub- picture of projection with the light transmission film 1012 in collimating structure 101
The explanation carried out for OLED30 in element 211, the also OLED30 in covering display sub-pixel 210.In other of the application
Same as above in embodiment, light transmission film 1012 only covering can project the OLED30 in sub-pixel 211, and show sub-pixel
The light emission side of OLED30 in 210 may not need the above-mentioned light transmission film 1012 of setting.
Light above-mentioned to be using the OLED30 on the display panel 100 as top emission type luminescent device, i.e. that OLED30 is issued
The explanation carried out for being emitted by thin-film encapsulation layer 50.When the OLED30 on above-mentioned display panel 100 is bottom emitting type photophore
Part, the i.e. light emission side of OLED30 are close to underlay substrate 42, when the light which issues is emitted by underlay substrate 42, such as Fig. 9 a
Or shown in Fig. 9 b, collimating structure 101 is located at the side surface that underlay substrate 42 deviates from pixel defining layer 41.
Wherein, in Fig. 9 a, collimating structure 101 has multiple lenticules 1011.Collimating structure 101 includes that light transmission is thin in Fig. 9 b
Film 1012 and the multiple collimation through-holes 1013 being formed on the light transmission film 1012.
In addition, above-mentioned display screen 10 can also include polaroid (polarizer, POL) 51 as shown in Figure 10 and dissipate
Backing 52.
Wherein, which is located at the top of collimating structure 101.Polaroid 51 can reduce ambient be irradiated to it is aobvious
Metal electrode in display screen 10, such as the reflected light generated when cathode 302.
Cooling fin 52 is located at the lower section of TFT backplate 40, is used for each OLED30 in display panel 100 in luminescence process
The heat of generation radiates.
Example two
It is identical as example one in this example, positioned at the visible light illuminator part shown in sub-pixel 210 and it is located at throwing
Penetrating infrared light-emitting device in sub-pixel 211 is OLED30.The difference is that in this example, underlay substrate 42 be glass substrate,
The resin substrate of hard.In the case, display panel 100 is hard screen, and screen cannot achieve bending.
Based on this, in order to be packaged to each OLED30 in display panel 100, as shown in Figure 11 a or Figure 11 b, show
Show that panel 100 further includes the cover board 53 for covering OLED30, and as shown in figure 12, sets within viewing area C mono- week around display panel 100
The sealant 54 set.Wherein, for the viewing area C of the display panel 100 for showing picture, above-mentioned first pixel unit 21 is located at should
In the C of viewing area.
The material for constituting cover board 53 may include glass, transparent hard resin or sapphire etc..As shown in fig. 11a,
Cover board 53 is in contact with sealant 54.
In the case, the OLED30 on display panel 100 is top emission type luminescent device, i.e. the light emission side of OLED30 is leaned on
Nearly cover board 53 is arranged, when the light issued is emitted by cover board 53, above-mentioned collimating structure 101 be located at cover board 53 and OLED30 it
Between.
Wherein, in Figure 11 a, collimating structure 101 has multiple lenticules 1011.It can be in the cathode layer 3021 of OLED30
Upper surface is prepared using InkJet printing processes.Alternatively, light transmission film 1012 can also be formed using above-mentioned nano-imprint process, with
And the multiple lenticules 1011 being structure as a whole with the light transmission film 1012.Next, by with the saturating of multiple lenticules 1011
Optical thin film 1012 is attached at the upper surface of the cathode layer 3021 of OLED30.
In Figure 11 b, collimating structure 101 includes light transmission film 1012 and the multiple standards being formed on the light transmission film 1012
Clear opening 1013.The collimating structure 101 can be formed using above-mentioned photoetching process and CVD technique, and this is no longer going to repeat them.
Above-mentioned is the explanation carried out so that the OLED30 on the display panel 100 is top emission type luminescent device as an example.When upper
Stating the OLED30 on display panel 100 is bottom emitting type luminescent device, i.e., the light emission side of OLED30, should close to underlay substrate 42
Same as above when the light that OLED30 is issued is emitted by underlay substrate 42, collimating structure 101 is located at underlay substrate 42 away from pixel
Define a side surface of layer 41.
Example three
In this example, above-mentioned visible light illuminator part, infrared light-emitting device can be, as depicted in fig. 13 a miniature
(micro) light emitting diode (light emitting diode, LED) 60.
Wherein, micro LED60 as illustrated in fig. 13b, including substrate 604, the epitaxial layer being grown on substrate 604 603, with
And it is set to the first electrode 601 on epitaxial layer 603, i.e. P electrode and second electrode 602, i.e. N electrode.
Above-mentioned epitaxial layer 603 mainly includes p type semiconductor layer, n type semiconductor layer, and is located at P-type semiconductor and N-type half
Luminescent layer between conductor.P-N junction is formed between p type semiconductor layer and n type semiconductor layer.
After applying voltage to first electrode 601 and second electrode 602, the electronics in n type semiconductor layer is pushed to p-type and partly leads
Body layer, and energy is issued in the form of photon with the hole-recombination in the p type semiconductor layer in luminescent layer, so that
MicroLED60 shines.
In the production process, when the material difference of above-mentioned luminescent layer, wavelength that micro LED 60 obtained emits beam
It is different.Can be arranged in same first pixel unit 21, each display sub-pixel 210 in turn can for issuing different colours
Light-exposed micro LED, and the micro for issuing infrared light is set in the projection sub-pixel 211 of the first pixel unit 21
LED60。
In addition, above-mentioned display panel 100 is as depicted in fig. 13 a, further includes silicon substrate 61, be formed on the silicon substrate 61 above-mentioned
Pixel-driving circuit 403.Upside-down mounting is on silicon substrate 61 by the way of as shown in figure 13 c by multiple micro LED60, and as schemed
It arranges in array fashion shown in 13a.
On this basis, in order to which the micro LED60 to multiple array arrangements is controlled, so that display panel 100
Picture is able to carry out to show.As shown in figures 14a, which further includes a plurality of first electrode line 62 and a plurality of second electricity
Polar curve 63.
Wherein, a plurality of first electrode line 62 along first direction X and it is multiple be located at a line, the first of micro LED60
Electrode 601 is electrically connected.
A plurality of second electrode line 63, and above-mentioned 62 insulation set of first electrode line, and in a second direction Y and it is multiple be located at it is same
One column, the second electrode 602 of multiple micro LED60 is electrically connected.
First direction X and second direction Y are arranged in a crossed manner, and the plane XOY where first direction X and second direction Y is silicon
Substrate 61 is used to carry the plane of micro LED60.
It can be seen from the above, second electrode line 63 and 62 insulation set of first electrode line, above-mentioned display panel 100 further includes the
One insulation 64 and second insulating layer 65.
First insulating layer 64 is located between micro LED60 and a plurality of first electrode line 62.In order to enable first electrode line
62 are electrically connected with the first electrode 601 of micro LED60, can be on the first insulating layer 64, and the of corresponding micro LED60
Plated through-hole (plating through hole, PTH) is arranged in the position of one electrode 601, so that first electrode line 62 passes through respectively
A PTH is electrically connected with the first electrode 601 of each micro LED60 of same a line respectively.
Second insulating layer 65 is between a plurality of first electrode line 62 and the second electrode line 63.It is same as above, in order to
So that second electrode line 63 is electrically connected with the second electrode 602 of micro LED60, it can be exhausted in second insulating layer 65 and first
In edge layer 64, and PTH is arranged in the position of the second electrode 602 of corresponding micro LED60 so that second electrode line 63 pass through it is each
PTH is electrically connected with the second electrode 602 of each micro LED60 of same a line respectively.
In this case, it is possible to signal be provided to first electrode line 62 line by line, line by line to the first electricity of micro LED60
Pole 601 is gated.It is provided after the first electrode 601 of a line micro LED60 gates, while to each second electrode line 63
Signal drives above-mentioned a line micro LED60 to carry out luminous.So, within the time of a picture frame, multiple array arrangements
Micro LED60 can carry out line by line it is luminous.
Infrared light in some embodiments of the present application, for being issued to the micro LED60 in projection sub-pixel 211
The collimating structure 101 converged, as shown in figures 14a, the light transmission film on the light emission side surface including being located at display panel 100
1012, and multiple lenticules 1011 on light transmission film 1012.
After the completion of the preparation of above-mentioned display panel 100, light transmission film 1012 can be formed using nano-imprint process, and
The multiple lenticules 1011 being structure as a whole with the light transmission film 1012.Next, by the light transmission with multiple lenticules 1011
Film 1012 is attached at the light emission side surface of display panel 100.
Alternatively, as shown in fig. 14b, above-mentioned collimating structure 101 may include light transmission in other embodiments of the application
Film 1012 and the multiple collimation through-holes 1013 being formed on the light transmission film 1012.Collimating structure 101 can shown in Figure 14 b
To be carried out using above-mentioned photoetching process and CVD technique, this is no longer going to repeat them.
Alternatively, setting refractive index can also be less than thoroughly in collimation through-hole 1013 in other embodiments of the application
The transmittance section 1014 of optical thin film 1012.
In conclusion can be incited somebody to action by the way that the projection sub-pixel 211 for issuing infrared light is arranged in display panel 100
The infrared projector 70 (as shown in fig. 15 a) being made of multiple projection sub-pixels 211 is embedding by the way of embedded (in-cell)
Enter into display panel 100.In this case, it is possible to the process of each display sub-pixel 210 in production display panel 100
In, complete the preparation of above-mentioned infrared projector 70.
In the case, as illustrated in fig. 15b, the infrared projector 70 due to will be made of multiple projection sub-pixels 211
It is set in the scheme of display panel 100, therefore can will be made of multiple projection sub-pixels 211 red by the way of embedded
The outer projector 70 can replace vertical cavity surface emitting laser (the vertical cavity surface for issuing infrared light
Emitting laser, VCSEL) 80.So, without as shown in fig. 15 c, opening up a part of non-display area and (not setting
Set the region of display sub-pixel 210), for putting VCSEL80.So as to reduce the ruler of display screen frame (black portions)
It is very little, achieve the purpose that improve 10 screen accounting of display screen.
In addition, all display sub-pixels 210 provide that is, in display panel 100 according to the effective resolution of display screen 10
Resolution ratio, can increase the quantity of the setting projection sub-pixel 211 in display panel 100, to improve infrared ray projection source
Quantity enables more infrared rays to be incident to testee, such as face, reaches the mesh for improving 3D depth scan precision
's.So, the optical diffraction of optical reproduction is carried out it is not necessary that the infrared ray for issuing to VCSEL is arranged in display screen 10
Device (diffractive optical element, DOE), so as to reduce the cost of manufacture of display screen 10.
In addition, further including the collimating structure 101 for being set to 100 light emission side of display panel in the display screen 10.Pass through collimation
Structure 101 can carry out collimation processing to the infrared light that projection sub-pixel 211 issues, and reduce the light loss of infrared light, effectively promoted
Infrared light utilization efficiency.
Under the premise of meeting 3D depth scan precision, in some embodiments of the present application, such as Fig. 3 a, Fig. 3 b or Fig. 3 c
It is shown, above-mentioned first pixel unit 21 is only provided in the entire display area of display panel 100.In the case, infrared throwing
It may be uniformly distributed in the display area of display panel 100 in emitter 70 as each projection sub-pixel 211 in infrared projection source
It is interior.Be conducive to improve the range and precision of 3D depth scan.
Alternatively, as shown in figure 16, above-mentioned display panel 100 further includes multiple in other embodiments of the application, and
The second pixel unit 22 for display.Second pixel unit 22 only includes multiple display for issuing different visible light
Pixel 210.
Wherein, it is shown in the second pixel unit 22 in the quantity and the first pixel unit 21 of sub-pixel 210 and shows sub-pixel
210 quantity is identical.For example, there are three be respectively used to issue the aobvious of R light, G light and B light for the first pixel unit 21 tool in Figure 16
Show sub-pixel 210.Second pixel unit 22 similarly has the display sub-pixel 210 for issuing R light, G light and B light.
So, each projection sub-pixel 211 in infrared projector 70 as infrared projection source is only in display area
In a part of region in distribution, so as to reduce influence of the projection sub-pixel 211 to 100 resolution ratio of display panel.
In addition, in order to realize above-mentioned 3D depth scan, the electronic equipment 01 with above-mentioned display screen 10 as shown in fig. 15 a,
It further include imaging sensor 71 and control, computing unit 72.
It, can be using winged light (time of light, TOF) imaging technique in some embodiments of the present application.In this feelings
Under condition, the infrared projector 70 being made of multiple projection sub-pixels 211 continuously transmits light pulse to testee.Imaging sensor
71 receive the light that testee returns.Next, flight (round-trip) time that control, computing unit 72 calculate light pulse comes really
The distance for determining testee achievees the purpose that 3D depth scan.
In other embodiments of the application, issued by the infrared projector 70 that multiple projection sub-pixels 211 are constituted
Light after the convergence by collimating structure 101, is projected to the surface of testee.It can after illumination is mapped to testee surface
Have figuratum hot spot to be formed, any two in space at the pattern of hot spot can be different.
Then, imaging sensor 71 is acquired the spot pattern of testee different surfaces.Next, control, meter
The pattern that unit 72 identified and calculated the hot spot of testee different surfaces is calculated, corresponding depth information is obtained, reaches 3D depth
Spend the purpose of scanning.
It should be noted that since each projection sub-pixel 211 for constituting infrared projector 70 is distributed in different first
In display unit 21.And each first display unit 21 is lighted line by line on display panel 100, therefore each projection of array arrangement
Sub-pixel 211 can also issue infrared light line by line.In the case, control, computing unit 72 can acquire imaging sensor 71
The information arrived carries out timing synchronization, and solving the problems, such as to light line by line due to the first display unit 21 causes depth information to be delayed.
It can be seen from the above, electronic equipment 01 provided by the embodiments of the present application is each in display panel 100 by being integrated in
It projects sub-pixel 211 and constitutes infrared projector 70, can be realized active 3D depth scan.Relative to no infrared projection source
For binocular imaging technology, it is not easy to be influenced by external factors such as illumination variation, bright and dark lights.
Electronic equipment 01 provided by the embodiments of the present application can not only carry out face when using above-mentioned 3D depth scan
Identification also has following application scenarios.
Scene one
In shooting environmental in the case where dark, at least part projection in display panel 100 can control
OLED30 or micro LED60 in pixel 211 shines, to carry out light filling to infrared camera, is conducive to infrared camera
In half-light swap-in row Image Acquisition, the picture quality (picture quality, PQ) of acquisition image is improved.
Scene two
By encoding the lighting timings of the OLED30 or micro LED60 in each projection sub-pixel 211 of timing control, from
And enable electronic equipment 01 to issue different infrared signals, and then be remotely controlled different devices by infrared communication, such as
Air-conditioning, TV etc..
Scene three
Display panel 100 with projection sub-pixel 211 can also realize gesture identification.It projects in sub-pixel 211
OLED30 or micro LED60 issues the hand of Infrared irradiation to user, imaging sensor 71 by hand reflected light or
The hot spot on person's hand surface is acquired.Then control, computing unit 72 calculate the collection result of imaging sensor 71,
The depth information of hand can be obtained in real time, to achieve the purpose that gesture identification.
Since multiple projection sub-pixels 211 may be uniformly distributed in the entire display area of display panel 100, Huo Zhexian
In the most of region for showing 100 display area of panel, therefore to can have quantity many and equally distributed for the electronic equipment 01
Infrared projection source.So, the infrared ray for being projected to hand can be more, and distribution is more uniform, reach and improve gesture identification essence
The purpose of degree.
Further, since distribution area of multiple projection sub-pixels 211 in display panel 100 is larger, so 3D depth is swept
The range retouched is also relatively wide.Therefore it when variation by a relatively large margin occurs for user's hand, still is able to realize accurately gesture identification.
Scene four
According to software pattern in 2 D code information, the projection sub-pixel 211 of array arrangement in display panel 100 can control
It is bright or dark, so that display panel 100 shows infrared two-dimensional barcode information.Since human eye can not see infrared light, works as and use
When electronic equipment 01 provided by the embodiments of the present application carries out two dimensional code payment, can not it be let out with the personal information of effective guarantee user
Dew.
Scene five
Using electronic equipment 01 provided by the embodiments of the present application while display safety information, array arrangement can control
Projection sub-pixel 211 it is bright or dark, to show infrared watermark.The infrared watermark will not impact user's viewing.But
It is that can see in the photo of shooting above-mentioned red after being shot using the camera with infrared camera to display content
Outer watermark, so as to get the source of information publication.
The above, the only specific embodiment of the application, but the protection scope of the application is not limited thereto, it is any
Change or replacement within the technical scope of the present application should all be covered within the scope of protection of this application.Therefore, this Shen
Protection scope please should be based on the protection scope of the described claims.
Claims (16)
1. a kind of display screen characterized by comprising
Display panel, the display panel include multiple first pixel units；Each first pixel unit includes at least one
A display sub-pixel for issuing different visible light and at least one be used to issue the projection sub-pixel of infrared light；
Collimating structure is set to the light emission side of the display panel, the infrared light issued for converging the projection sub-pixel.
2. display screen according to claim 1, which is characterized in that the display panel further include: multiple visible light illuminators
Part；
Each visible light illuminator part is corresponding with a display sub-pixel, and each visible light illuminator part
In the display sub-pixel corresponding to the visible light illuminator part；
Multiple infrared light-emitting devices；Each infra red light emitter part correspondence is corresponding with the projection sub-pixel and each
The infrared light-emitting device is located in the projection sub-pixel corresponding to the infrared light-emitting device.
3. display screen according to claim 2, which is characterized in that the visible light illuminator part, the infrared illuminator
Part is Organic Light Emitting Diode；
The display panel further includes pixel defining layer；
It is provided with multiple openings in the pixel defining layer, there is barricade between two neighboring opening；
Multiple openings include multiple first openings and multiple second openings；
Each first opening is corresponding with a display sub-pixel, and each first opening is located at described first
In the corresponding display sub-pixel of opening；Each visible light illuminator part is corresponding with first opening,
And the organic luminous layer of the visible light illuminator part is located in first opening corresponding to the visible light illuminator part；
Each second opening is corresponding with a projection sub-pixel, and each second opening is located at described second
In the corresponding projection sub-pixel of opening；Each infra red light emitter part is corresponding with second opening,
And the organic luminous layer of each infra red light emitter part is located at corresponding to the infra red light emitter part described second and opens
In mouthful.
4. display screen according to claim 3, which is characterized in that the display panel further includes covering the organic light emission
The thin-film encapsulation layer of diode；
The light emission side of the Organic Light Emitting Diode is located at the thin-film package close to the thin-film encapsulation layer, the collimating structure
Layer deviates from a side surface of the pixel defining layer.
5. display screen according to claim 4, which is characterized in that the thin-film encapsulation layer include multilayer inorganic encapsulated layer and
Multilayer organic encapsulation layer；The inorganic encapsulated layer and the organic encapsulation layer are arranged alternately；
The collimating structure is integrated with the inorganic encapsulated layer in the thin-film encapsulation layer farthest away from the pixel defining layer
Structure.
6. display screen according to claim 3, which is characterized in that the display panel further includes covering the organic light emission
The cover board of diode, and the sealant around the setting in one week of the viewing area of the display panel；The cover board and the sealant
It is in contact；Wherein, first pixel unit is located in the viewing area；
The light emission side of the Organic Light Emitting Diode close to the cover board, the collimating structure be located at the cover board with it is described organic
Between light emitting diode.
7. display screen according to claim 3, which is characterized in that the display panel further includes carrying the pixel to define
The underlay substrate of layer；
For the light emission side of the Organic Light Emitting Diode close to the underlay substrate, the collimating structure is located at underlay substrate back
A side surface from the pixel defining layer.
8. display screen according to claim 2, which is characterized in that the visible light illuminator part, the infrared illuminator
Part is micro-led；
The display panel includes silicon substrate, and multiple micro-led upside-down mountings are on the silicon substrate, and array is arranged
Cloth.
9. display screen according to claim 8, which is characterized in that the display panel further include:
A plurality of first electrode line is located at multiple with a line, the micro-led first electrode along first direction
Electrical connection；
A plurality of second electrode line, and the first electrode line insulation set, and in a second direction with it is multiple positioned at same row, it is more
A micro-led second electrode electrical connection；
Wherein, the first direction and the second direction are intersected.
10. display screen according to claim 9, which is characterized in that the display panel further include:
First insulating layer is located at described micro-led between the first electrode line；
Second insulating layer, between a plurality of first electrode line and a plurality of second electrode line.
11. -9 described in any item display screens according to claim 1, which is characterized in that the collimating structure includes multiple micro-
Mirror；The lenticule covers the luminous zone of the projection sub-pixel, and the projecting surface of the lenticule deviates from the display panel.
12. display screen according to claim 11, which is characterized in that the collimating structure further includes light transmission film；
The light transmission film is structure as a whole between the lenticule and the display panel, and with the lenticule.
13. -9 described in any item display screens according to claim 1, which is characterized in that the collimating structure includes light transmission film
And at least one collimation through-hole through the light transmission film；
The collimation through-hole is in the orthographic projection for projecting sub-pixel, in the luminous zone of the projection sub-pixel.
14. display screen according to claim 13, which is characterized in that transmittance section is filled in the collimation through-hole, it is described
The refractive index of transmittance section, less than the refractive index of the light transmission film.
15. display screen according to claim 1, which is characterized in that the display panel further includes multiple for display
Second pixel unit；
Second pixel unit only includes the display sub-pixel that at least one is used to issue different visible light；
The quantity phase that sub-pixel is shown in the quantity and first pixel unit of sub-pixel is shown in second pixel unit
Together.
16. a kind of electronic equipment, which is characterized in that including shell, and such as the described in any item display screens of claim 1-15；
The display screen is installed on the shell.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910436413.7A CN110350000A (en) | 2019-05-23 | 2019-05-23 | A kind of display screen and electronic equipment |
| PCT/CN2020/091627 WO2020233684A1 (en) | 2019-05-23 | 2020-05-21 | Display screen and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910436413.7A CN110350000A (en) | 2019-05-23 | 2019-05-23 | A kind of display screen and electronic equipment |
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| CN110350000A true CN110350000A (en) | 2019-10-18 |
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| CN201910436413.7A Pending CN110350000A (en) | 2019-05-23 | 2019-05-23 | A kind of display screen and electronic equipment |
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| Country | Link |
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| CN (1) | CN110350000A (en) |
| WO (1) | WO2020233684A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648596A (en) * | 2019-10-22 | 2020-01-03 | 京东方科技集团股份有限公司 | Display panel, display method thereof and display device |
| CN111935340A (en) * | 2020-07-01 | 2020-11-13 | 联想(北京)有限公司 | Electronic equipment |
| WO2020233684A1 (en) * | 2019-05-23 | 2020-11-26 | 华为技术有限公司 | Display screen and electronic device |
| CN113064516A (en) * | 2021-03-23 | 2021-07-02 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN113820878A (en) * | 2020-06-18 | 2021-12-21 | 华为技术有限公司 | Display panel, display device, and electronic apparatus |
| CN114242876A (en) * | 2021-12-20 | 2022-03-25 | 厦门天马微电子有限公司 | Display panel and display device |
| CN114464715A (en) * | 2021-07-05 | 2022-05-10 | 荣耀终端有限公司 | Infrared emitter and preparation method thereof, display panel and preparation method thereof and terminal |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122297A (en) * | 2021-11-30 | 2022-03-01 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090116529A1 (en) * | 2005-03-28 | 2009-05-07 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus |
| US20140034911A1 (en) * | 2012-08-06 | 2014-02-06 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Organic Light-Emitting Diode |
| TW201734574A (en) * | 2016-03-21 | 2017-10-01 | 住華科技股份有限公司 | Optical structure, manufacturing method thereof, optical device using the same and manufacturing method thereof |
| CN107436685A (en) * | 2017-07-31 | 2017-12-05 | 京东方科技集团股份有限公司 | Display device, self luminous display panel and gesture identification method |
| CN107706223A (en) * | 2017-09-29 | 2018-02-16 | 京东方科技集团股份有限公司 | OLED shows structure and display, space point positioning system and method |
| US20180322325A1 (en) * | 2017-05-02 | 2018-11-08 | Lg Display Co., Ltd. | Flat panel display embedding optical imaging sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282694B2 (en) * | 2004-12-15 | 2007-10-16 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Optical navigation system having a ring pixel array |
| US9443102B2 (en) * | 2015-01-19 | 2016-09-13 | International Business Machines Corporation | Protecting content displayed on a mobile device |
| CN110350000A (en) * | 2019-05-23 | 2019-10-18 | 华为技术有限公司 | A kind of display screen and electronic equipment |
-
2019
- 2019-05-23 CN CN201910436413.7A patent/CN110350000A/en active Pending
-
2020
- 2020-05-21 WO PCT/CN2020/091627 patent/WO2020233684A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090116529A1 (en) * | 2005-03-28 | 2009-05-07 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus |
| US20140034911A1 (en) * | 2012-08-06 | 2014-02-06 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Organic Light-Emitting Diode |
| TW201734574A (en) * | 2016-03-21 | 2017-10-01 | 住華科技股份有限公司 | Optical structure, manufacturing method thereof, optical device using the same and manufacturing method thereof |
| US20180322325A1 (en) * | 2017-05-02 | 2018-11-08 | Lg Display Co., Ltd. | Flat panel display embedding optical imaging sensor |
| CN107436685A (en) * | 2017-07-31 | 2017-12-05 | 京东方科技集团股份有限公司 | Display device, self luminous display panel and gesture identification method |
| CN107706223A (en) * | 2017-09-29 | 2018-02-16 | 京东方科技集团股份有限公司 | OLED shows structure and display, space point positioning system and method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020233684A1 (en) * | 2019-05-23 | 2020-11-26 | 华为技术有限公司 | Display screen and electronic device |
| CN110648596A (en) * | 2019-10-22 | 2020-01-03 | 京东方科技集团股份有限公司 | Display panel, display method thereof and display device |
| CN113820878A (en) * | 2020-06-18 | 2021-12-21 | 华为技术有限公司 | Display panel, display device, and electronic apparatus |
| CN111935340A (en) * | 2020-07-01 | 2020-11-13 | 联想(北京)有限公司 | Electronic equipment |
| CN113064516A (en) * | 2021-03-23 | 2021-07-02 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN114464715A (en) * | 2021-07-05 | 2022-05-10 | 荣耀终端有限公司 | Infrared emitter and preparation method thereof, display panel and preparation method thereof and terminal |
| CN114464715B (en) * | 2021-07-05 | 2024-03-29 | 荣耀终端有限公司 | Infrared emitter and preparation method thereof, display panel and preparation method thereof, and terminal |
| CN114242876A (en) * | 2021-12-20 | 2022-03-25 | 厦门天马微电子有限公司 | Display panel and display device |
| CN114242876B (en) * | 2021-12-20 | 2023-11-21 | 厦门天马微电子有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020233684A1 (en) | 2020-11-26 |
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Application publication date: 20191018 |