WO2020233684A1 - Display screen and electronic device - Google Patents

Abstract

Provided are a display screen (10) and an electronic device (01), which relate to the technical field of displays, and can resolve the issue in which a depth camera occupies a large display area of an electronic device. The display screen comprises a display panel (100). The display panel comprises a plurality of first pixel units (21) and a collimation structure (101). Each of the plurality of first pixel units comprises a plurality of display sub-pixels (210) emitting different visible lights, and at least one projection sub-pixel (211) emitting an infrared light. The collimation structure is disposed on a light emission side of the display panel, and is used to converge the infrared light emitted by the projection sub-pixel.

Description

Display screen and electronic equipment

This application claims the priority of the Chinese patent application filed with the State Intellectual Property Office of China with application number 201910436413.7 on May 23, 2019, and the priority of the Chinese patent application with the title of “a display screen and electronic equipment”, which The entire content is incorporated into this application by reference.

Technical field

This application relates to the field of display technology, in particular to a display screen and electronic equipment.

Background technique

With the development of biometric technology, deep scanning technology and image processing technology can be used to recognize the inherent physiological characteristics of the human body, such as facial features.

The depth camera using depth scanning technology can collect the depth information of each feature part of the face to obtain a depth image, and match the collected depth image with the original image through image processing technology to achieve the purpose of face recognition.

In order to install the depth camera in an electronic device, such as a mobile phone, it is usually necessary to leave a part of the area on the screen of the mobile phone to place the depth camera. Since the position of the depth camera cannot perform image display, it will reduce the screen-to-body ratio of the mobile phone (the ratio of the effective display area of the display to the entire display).

Summary of the invention

The embodiments of the present application provide a display screen and an electronic device, which are used to solve the problem that a depth camera occupies a large display area of the electronic device.

In one aspect of the embodiments of the present application, a display screen is provided. The display screen includes a display panel. The display panel includes a plurality of first pixel units and a collimating structure. A plurality of first pixel units, and each first pixel unit includes a plurality of display sub-pixels for emitting different visible light, and at least one projection sub-pixel for emitting infrared light. The collimating structure is arranged on the light emitting side of the display panel, and is used to converge and project the infrared light emitted by the sub-pixels. By arranging projection sub-pixels for emitting infrared light in the display panel, the infrared projector composed of multiple projection sub-pixels can be embedded in the display panel in an embedded manner. In this case, the preparation of the above-mentioned infrared projector can be completed in the process of making each display sub-pixel of the display panel. In this case, compared to the solution of integrating the VCSEL used to emit infrared light into the display panel, the display panel of the display screen provided by the embodiment of the present application does not need to open a part of the non-display area for the display panel. Put the above VCSEL. In this way, the above-mentioned VCSEL can be replaced by an infrared projector composed of a plurality of projection sub-pixels, so as to achieve the purpose of increasing the proportion of the display screen. In addition, according to the effective resolution of the display screen, that is, the resolution provided by all display sub-pixels in the display panel, the number of projection sub-pixels set in the display panel can be increased, thereby increasing the number of infrared projection sources and enabling more infrared Incident to the measured object, such as a human face, to achieve the purpose of improving the 3D depth scanning accuracy. In this way, there is no need to provide a DOE for optically copying the infrared light emitted by the VCSEL in the display screen, thereby reducing the production cost of the display screen. In addition, the display screen also includes a collimating structure arranged on the light emitting side of the display panel. The collimation structure can collimate the infrared light emitted by the projection sub-pixels, reduce the light loss of the infrared light, and effectively improve the utilization rate of the infrared light.

Optionally, multiple visible light emitting devices; one visible light emitting device is located in one display sub-pixel. Multiple infrared light emitting devices. An infrared light emitting device is located in a projection sub-pixel. The above visible light emitting device and infrared light emitting device can realize self-luminescence.

Optionally, the visible light emitting device and the infrared emitting device are organic light emitting diodes. The display panel also includes a pixel defining layer. A plurality of openings are arranged on the pixel defining layer, and there is a barrier between two adjacent openings; one opening is located in the light-emitting area of a display sub-pixel or a projection sub-pixel. The organic light emitting layer of an organic light emitting diode is located in an opening. Therefore, the light emitting diode for emitting infrared light can be arranged in the light emitting area of the projection sub-pixel.

Optionally, the display panel further includes a thin film packaging layer covering the organic light emitting diode. The light-emitting side of the organic light-emitting diode is close to the thin-film encapsulation layer, and the collimating structure is located on the surface of the thin-film encapsulation layer facing away from the pixel defining layer, so that the collimating structure is arranged on the outer surface of the thin-film encapsulation layer, so that the light emitted by the organic light-emitting diode can escape from the After the encapsulation layer is emitted, it enters the collimation structure for collimation processing.

Optionally, the thin film encapsulation layer includes multiple inorganic encapsulation layers and multiple organic encapsulation layers; the inorganic encapsulation layer and the organic encapsulation layer are alternately arranged. The collimation structure and the inorganic encapsulation layer farthest from the pixel defining layer in the thin film encapsulation layer are an integral structure. In this way, the preparation of the collimation structure can be completed when the outermost inorganic encapsulation layer in the thin film encapsulation layer is made.

Optionally, the display panel further includes a cover plate covering the organic light emitting diodes, and a sealant arranged around the display area of the display panel. The cover plate is in contact with the frame sealing glue. Wherein, the first pixel unit is located in the display area. The light emitting side of the organic light emitting diode is close to the cover plate, and the collimating structure is located between the cover plate and the organic light emitting diode.

Optionally, the display panel further includes a base substrate carrying the pixel defining layer. The light emitting side of the organic light emitting diode is close to the base substrate, and the collimating structure is located on the side surface of the base substrate away from the pixel defining layer. Therefore, when the organic light-emitting diode emits light at the bottom, the above-mentioned collimating structure can collimate the light emitted by the organic light-emitting diode.

Optionally, the visible light emitting device and the infrared emitting device are miniature light emitting diodes. The display panel includes a silicon substrate, and a plurality of micro light-emitting diodes are flip-mounted on the silicon substrate and arranged in an array.

Optionally, the display panel further includes a plurality of first electrode lines and a plurality of second electrode lines. Wherein, the plurality of first electrode lines are electrically connected to the plurality of first electrodes of the micro light emitting diodes in the same row along the first direction. The plurality of second electrode wires are insulated from the first electrode wires, and are electrically connected to the second electrodes of the plurality of micro light emitting diodes in the same column along the second direction. Wherein, the first direction and the second direction cross. The signal can be provided to the first electrode line row by row to gate the first electrode of the micro light emitting diode row by row. When the first electrode of a row of micro light emitting diodes is gated, signals are provided to each second electrode line at the same time to drive the row of micro light emitting diodes to emit light. In this way, within one image frame, multiple arrays of micro light emitting diodes can emit light row by row.

Optionally, the display panel further includes a first insulating layer and a second insulating layer. The first insulating layer is located between the micro light emitting diode and the first electrode line. PTH is provided on the first insulating layer and corresponding to the position of the first electrode of the micro light emitting diode, so that the first electrode line is electrically connected to the first electrode of each micro light emitting diode in the same row through each PTH. The second insulating layer is located between the plurality of first electrode lines and the plurality of second electrode lines. PTHs are provided on the second insulating layer and the first insulating layer and corresponding to the second electrodes of the micro light emitting diodes, so that the second electrode lines are electrically connected to the second electrodes of the micro light emitting diodes in the same row through each PTH.

Optionally, the collimating structure includes a plurality of microlenses. The micro lens covers the light-emitting area of the projection sub-pixel, and the convex surface of the micro lens faces away from the display panel. The convex surface of the micro lens converges the infrared light emitted by the OLED in the projection sub-pixel to achieve the purpose of light collimation.

Optionally, the collimating structure further includes a transparent film. The light-transmitting film is located between the micro lens and the display panel, and is an integral structure with the micro lens. After the film encapsulation layer is fabricated by the film encapsulation technology, a transparent resin layer can be formed on the upper surface of the film encapsulation layer, and then the transparent resin layer is imprinted using a nanoimprinting process to form the collimation structure. Alternatively, a nano-imprinting process can also be used to form a light-transmitting film and a plurality of microlenses integrated with the light-transmitting film. Next, a light-transmitting film with a plurality of microlenses is attached to the upper surface of the film encapsulation layer.

Optionally, the collimating structure includes a light-transmitting film and a plurality of collimating through holes penetrating the light-transmitting film. At least one collimating through hole is in the orthographic projection of the projection sub-pixel and is located in the light-emitting area of the projection sub-pixel. Since the collimating through hole is filled with air, the air is a light-thin medium relative to the light-transmitting film. Therefore, the refractive index of the medium (ie, air) in the collimated through hole is smaller than the refractive index of the transparent film. In this case, in the projection sub-pixel, after the infrared light emitted by the organic light-emitting layer of the OLED enters the collimating through hole, it will be totally reflected on the side wall surface of the collimating through hole, thereby reducing the incidence of light to the light-transmitting film The internal probability reduces the light loss, so that most of the light can be emitted upward from the aperture of the collimating through hole to achieve the purpose of light collimation.

Optionally, a light-transmitting part is filled in the collimating through hole. The refractive index of the light-transmitting part is smaller than the refractive index of the light-transmitting film. Therefore, after the infrared light emitted by the organic light-emitting layer of the OLED in the projection sub-pixel enters the light-transmitting part, it will be totally reflected at the interface between the light-transmitting part and the light-transmitting film, thereby reducing the incidence of light into the light-transmitting film The probability of achieving the purpose of light collimation.

Optionally, the display panel further includes a plurality of second pixel units used for display. The second pixel unit only includes a plurality of display sub-pixels for emitting different visible lights. The number of display sub-pixels in the second pixel unit is the same as the number of display sub-pixels in the first pixel unit. In this way, each projection sub-pixel as an infrared projection source is distributed uniformly in only a part of the display area, so that the influence of the projection sub-pixel on the resolution of the display panel can be reduced.

In another aspect of the embodiments of the present application, there is provided an electronic device including a housing and any display screen as described above. The display screen is installed on the shell. The above-mentioned electronic device has the same technical effect as the display screen provided in the foregoing embodiment, and will not be repeated here.

Description of the drawings

FIG. 1 is a schematic structural diagram of an electronic device provided by some embodiments of the application;

FIG. 2 is a schematic diagram of the structure of the display screen in FIG. 1;

FIG. 3a is a schematic diagram of a structure of the display panel in FIG. 2;

FIG. 3b is a schematic diagram of another structure of the display panel in FIG. 2;

FIG. 3c is a schematic diagram of another structure of the display panel in FIG. 2;

4 is a schematic structural diagram of an OLED provided by an embodiment of the application;

FIG. 5a is a schematic structural diagram of a display panel provided by some embodiments of the application;

FIG. 5b is a schematic diagram of the structure of the TFT backplane in FIG. 5a;

5c is a schematic diagram of the structure of the light-emitting area and the non-light-emitting area of each sub-pixel in FIG. 5a;

5d is a schematic diagram of a display panel obtained by cutting from top to bottom along O-O shown in FIG. 5a;

FIG. 5e is a schematic diagram of the structure of the pixel defining layer in FIG. 5d;

FIG. 5f is a schematic diagram of a structure in which an organic light-emitting layer is arranged in the opening of the pixel defining layer;

FIG. 6a is a schematic structural diagram of another display panel provided by some embodiments of the application;

Figure 6b is a cross-sectional view of a display screen provided by some embodiments of the application;

FIG. 6c is a schematic diagram of the structure of the thin film encapsulation layer in FIG. 6b;

FIG. 7a is a schematic structural diagram of a display screen provided by some embodiments of the application;

FIG. 7b is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

Figure 7c is a cross-sectional view of another display screen provided by some embodiments of the application;

Figure 7d is a cross-sectional view of another display screen provided by some embodiments of the application;

FIG. 7e is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

FIG. 8a is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

Figure 8b is a cross-sectional view of another display screen provided by some embodiments of the application;

Figure 8c is a cross-sectional view of another display screen provided by some embodiments of the application;

Figure 9a is a cross-sectional view of another display screen provided by some embodiments of the application;

Figure 9b is a cross-sectional view of another display screen provided by some embodiments of the application;

FIG. 10 is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

Figure 11a is a cross-sectional view of another display screen provided by some embodiments of the application;

Fig. 11b is a cross-sectional view of another display screen provided by some embodiments of the application;

Figure 12 is a top structural view of the frame sealant in Figure 11a or Figure 11b;

FIG. 13a is a schematic structural diagram of a display panel provided by some embodiments of the application;

Fig. 13b is a schematic diagram of the structure of the micro LED in Fig. 13a;

FIG. 13c is a schematic diagram of the flip chip of the micro LED shown in FIG. 13b;

FIG. 14a is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

FIG. 14b is a schematic diagram of another structure of a display screen provided by some embodiments of the application;

FIG. 15a is a schematic structural diagram of an infrared projection, collection, and calculation processing system provided by some embodiments of the application;

FIG. 15b is a schematic diagram of depth detection of a display screen provided in some embodiments of the application;

FIG. 15c is another schematic diagram of depth detection on a display screen provided in some embodiments of the application;

FIG. 16 is a schematic structural diagram of a display panel provided by some embodiments of the application.

Reference signs:

01-Electronic equipment; 10-display screen; 11-middle frame; 12-housing; 100-display panel; 101-collimation structure; 1011-microlens; 1012-transparent film; 1013-collimation through hole; 1014 Light-transmitting part; 21-first pixel unit; 210-display sub-pixel; 211-projection sub-pixel; 30-OLED; 300-organic light-emitting layer; 301-anode; 302-cathode; 3021-cathode layer; 303-hole Transport layer; 304-hole injection layer; 305-electron transport layer; 306-electron injection layer; 40-TFT backplane; 403-pixel driving circuit; 41-pixel defining layer; 401-opening; 402-retaining wall; 42 -Base substrate; 50-thin film encapsulation layer; 501-inorganic film layer; 502-organic film layer; 51-polarizer; 52-heat sink; 53-cover plate; 54-sealing glue; 60-micro LED; 601 -First electrode; 602-second electrode; 603-epitaxial layer; 604-substrate; 61-silicon substrate; 62-first electrode line; 63-second electrode line; 64-first insulating layer; Two insulating layers; 70-infrared projector; 71-imaging sensor; 72-control and calculation unit; 80-VCSEL.

Detailed ways

The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

Hereinafter, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of these features. In the description of this application, unless otherwise specified, "plurality" means two or more.

In addition, in this application, the azimuthal terms such as "upper" and "lower" are defined relative to the schematic placement of the components in the drawings. It should be understood that these directional terms are relative concepts, and they are used for relative For the description and clarification, it can be changed correspondingly according to the changes in the orientation of the components in the drawings.

The embodiments of the present application provide an electronic device, which may be products with display interfaces such as mobile phones, displays, tablet computers, and in-vehicle computers, as well as smart display wearable products such as smart watches and smart bracelets. The embodiments of the present application do not impose special restrictions on the specific form of the above electronic equipment. For the convenience of description, the following embodiments are all exemplified by taking the electronic device 01 shown in FIG. 1 as a mobile phone as an example.

As shown in FIG. 1, the above-mentioned electronic device 01 mainly includes a display screen 10, a middle frame 11 for carrying the display screen 10 and a casing 12. The display screen 10 is installed on the housing 12 through the middle frame 11. A central processing unit (CPU) may be provided on the side of the middle frame 11 facing away from the display screen 10.

The structure of the above-mentioned display screen 10 will be described below.

The display screen 10 includes as shown in FIG. 2, including a display panel 100 and a collimating structure 101.

As shown in FIG. 2, the above-mentioned display panel 100 includes a plurality of first pixel (pixel) units 21. Each first pixel unit 21 includes at least one display subpixel 210 for emitting visible light, and at least one projection subpixel 211 for emitting infrared light.

In some embodiments of the present application, as shown in FIG. 3a, the first pixel unit 21 may include three display sub-pixels 210, and the visible light emitted is red (red, R) light, blue (green, G ) Light and blue light (blue, B).

Or, as shown in FIG. 3b, the visible light emitted by the three display sub-pixels 210 is cyan (C) light, magenta (Magenta, M) light, and yellow light (yellow, Y).

Or, in other embodiments of the present application, as shown in FIG. 3c, the above-mentioned first pixel unit 21 may include four display sub-pixels 210, and the visible light emitted respectively is red light, green light, blue light, and White (W) light.

Or, the first pixel unit 21 includes four display sub-pixels 210, which respectively emit red, green, blue, and green visible light.

This application does not limit the number of display sub-pixels 210 in the first pixel unit 21 and the light-emitting color combination.

On this basis, as shown in FIG. 2, the collimating structure 101 is disposed on the light emitting side of the display panel 100 and is used to converge and project the infrared light emitted by the sub-pixels 211. Therefore, the probability of scattering of the infrared light emitted by the projection sub-pixel 211 can be reduced, and the light loss of the infrared light can be reduced.

In addition, in order to enable the above-mentioned display sub-pixel 210 to emit visible light, in some embodiments of the present application, the display panel 100 further includes a plurality of visible light emitting devices. Each visible light emitting device corresponds to a display sub-pixel 210, and each visible light emitting device is located in the display sub-pixel 210 corresponding to the visible light emitting device, so that the display panel 100 can realize self-luminescence without setting a backlight source.

In addition, in order to enable the above-mentioned projection sub-pixel 211 to emit infrared light, in some embodiments of the present application, the display panel 100 further includes a plurality of infrared light-emitting devices. Each infrared light emitting device corresponds to a transmission sub-pixel 211, and each infrared light emitting device is located in the projection sub-pixel 211 corresponding to the infrared light emitting device.

The arrangement of the above-mentioned visible light emitting device and infrared light emitting device in the display panel 100 will be described as an example below.

Example one

In this example, the visible light emitting device located in the display sub-pixel 210 and the infrared light emitting device located in the projection sub-pixel 211 are organic light emitting diodes (OLED). In this case, the display panel 100 is an active matrix organic light emitting diode (AMOLED) display panel.

As shown in FIG. 4, the above-mentioned OLED 30 includes an organic light emitting layer 300, an anode (anodic, a) 301 and a cathode (cathode, c) 302 located on both sides of the organic light emitting layer 300.

In some embodiments of the present application, the material constituting the anode 301 may be a metal material, such as aluminum (Al), manganese (Mg), and the like. The material constituting the cathode 302 may be a transparent conductive material, for example, indium tin oxide (ITO), indium zinc oxide (IZO). In this case, the cathode 302 transmits light, and the light transmittance of the anode 301 is small, so the light emitted by the OLED 30 is emitted from the side where the cathode 302 is located. At this time, the OLED 30 is a top emission type light emitting device.

Alternatively, in other embodiments of the present application, the material constituting the anode 301 may be the above-mentioned transparent conductive material; the material constituting the cathode 302 is the above-mentioned metal material. In this case, the anode 301 transmits light, and the light transmittance of the cathode 302 is small, so the light emitted by the OLED 30 is emitted from the side where the anode 301 is located. At this time, the OLED 30 is a bottom emission type light emitting device.

Based on this, after voltage is applied to the anode 301 and the cathode 302 on both sides of the organic light-emitting layer 300, the carriers in the anode 301 and the cathode 302 meet in the organic light-emitting layer 300 and excite photons, so that the organic light-emitting layer 300 emits light . At this time, the OLED 30 emits light, and the display panel 100 having a plurality of the OLED 30 performs screen display.

Wherein, in the same first pixel unit 21, the materials of the organic light emitting layer 300 of the visible light emitting devices in different display sub-pixels 210 are different, so that the visible light emitting devices in the above different display sub-pixels 210 can emit visible light of different colors, for example Red, green or blue light.

The material of the organic light emitting layer 300 of the infrared light emitting device in the projection sub-pixel 211 can emit infrared light under the action of the electric field generated by the anode 301 and the cathode 302 on both sides of the organic light emitting layer 300.

In addition, in order to increase the probability that the carriers in the anode 301 and the cathode 302 meet in the organic light emitting layer 300, the luminous efficiency of the OLED 30 is improved. As shown in FIG. 4, the aforementioned OLED 30 further includes a hole transport layer 303, a hole injection layer 304, an electron transport layer 305, and an electron injection layer 306.

Wherein, the hole transport layer 303 and the hole injection layer 304 are located on the side of the organic light emitting layer 300 facing the anode 301, and are sequentially close to the anode 301. The electron transport layer 305 and the electron injection layer 306 are located on the side of the organic light-emitting layer 300 facing the cathode 302 and close to the cathode 302 in turn.

Based on this, in order to drive the plurality of OLEDs 30 to emit light, the display panel 100, as shown in FIG. 5a, further includes a thin film transistor (TFT) backplane 40.

The TFT backplane 40 includes pixel driving circuits 403 arranged in an array as shown in FIG. 5b. The pixel driving circuit 403 includes a plurality of TFTs and at least one capacitor. In FIG. 5b, the pixel driving circuit 403 has a 2T1C structure, that is, it includes two TFTs, such as T1 and T2, and a capacitor C as an example.

In this case, as shown in FIG. 5c, the display sub-pixel 210 or the projection sub-pixel 211 of the display panel 100 can be divided into a light-emitting area A where the OLED 30 is located, and a non-light-emitting area B where the pixel driving circuit 403 is located.

In addition, as shown in FIG. 5a, the anode 301 of each OLED 30 is arranged on the TFT backplane 40 at intervals and in blocks. An independent voltage can be provided to the anode 301 of each OLED 30 to individually control the luminous brightness of the OLED 30.

As shown in FIG. 5d (a cross-sectional view obtained by cutting the TFT backplane along OO in FIG. 5a), the anode 301 of each OLED and at least one TFT in the pixel driving circuit 403 below it, such as the one in FIG. 5b The drain (drain, d) of T1 is electrically connected.

In addition, as shown in FIG. 5d, the above-mentioned display panel 100 further includes a pixel definition layer (PDL) 41 on the TFT backplane 40.

A plurality of openings 401 are provided on the pixel defining layer 41, and a pillar 402 is provided between two adjacent openings.

The plurality of openings 401 include a plurality of first openings 401a and a plurality of second openings 401b as shown in FIG. 5e.

Each first opening 401a corresponds to a display sub-pixel 210, and each first opening 401a is located in the display sub-pixel 210 corresponding to the first opening.

In this case, each visible light emitting device corresponds to one first opening 401a. In addition, it can be seen from the above that in this example, the visible light emitting device is an OLED, and the OLED has the above organic light emitting layer 300. In this case, as shown in FIG. 5f, the organic light emitting layer 300a of the visible light emitting device is located in the first opening 401a corresponding to the visible light emitting device.

Each second opening 401b corresponds to one projection sub-pixel 211, and each second opening 401b is located in the projection sub-pixel 211 corresponding to the second opening 401b.

In this case, each infrared light emitting device corresponds to a second opening 401b, and the organic light emitting layer 300b of each infrared light emitting device is located in the second opening 401b corresponding to the infrared light emitting device.

In addition, the organic light-emitting layer 300 of the OLED 30 in two adjacent different display sub-pixels 210 can be spaced by each barrier 402 on the PDL 41, so that the light-emitting color of each OLED 30 can be independent.

In the same way, the organic light-emitting layer 300 of the OLED 30 in the display sub-pixel 210 can be spaced apart from the organic light-emitting layer 300 of the OLED 30 in the projection sub-pixel 211 through the barrier walls 402 on the PDL 41.

In addition, the cathode 302 of each OLED 30 is usually connected to the same voltage, for example, the voltage ELVSS. Therefore, as shown in FIG. 5a, the cathodes 302 of each OLED 30 can be electrically connected together to form an integral structure to form a cathode layer 3021. The cathode layer 3021 covers all the organic light emitting layer 300 of the OLED 30.

In addition, the aforementioned TFT backplane 40 also includes a base substrate 42. In this example, the base substrate 42 may be a flexible resin substrate made of a flexible material, such as polyethylene terephthalate (PET).

In this case, the aforementioned display panel 100 may be a flexible display panel. The flexible display panel can be encapsulated by adopting thin film encapsulation (TFE) technology. Based on this, as shown in FIG. 6a, the display panel 100 further includes a thin film encapsulation layer 50 located above the cathode layer 3021.

As shown in FIG. 6b, the thin film encapsulation layer 50 covers each OLED 30 in the display panel 100. Wherein, the thin film encapsulation layer 50 as shown in FIG. 6c includes a stacked inorganic thin film layer 501 and an organic thin film layer 502 arranged alternately.

The organic thin film layer 502 is made of an organic transparent material and has a certain degree of flexibility, enabling the display panel 100 with the thin film encapsulation layer 50 to be bent. The inorganic thin film layer 501 can isolate external water vapor and oxygen, and prevent it from entering the OLED 30 and affecting the performance of the OLED 30.

In order to improve the ability of the inorganic thin film layer 501 to block water vapor and oxygen, the upper and lower two outermost thin film layers in the thin film encapsulation layer 50 are the aforementioned inorganic thin film layers 501.

In addition, when the OLED 30 on the display panel 100 is a top-emission light-emitting device, that is, when the light exit side of the OLED 30 is close to the thin-film encapsulation layer 50, the light emitted by the OLED 30 is emitted from the thin-film encapsulation layer 50. In this case, in order to converge the light emitted by the OLED 30 in the projection sub-pixel 211, as shown in FIG. 6b, the collimating structure 101 is located on the side surface of the thin film encapsulation layer 50 away from the pixel defining layer 41.

In some embodiments of the present application, the above-mentioned collimating structure 101 includes a plurality of microlenses (lens) 1011 as shown in FIG. 7 a, and the convex surface of the microlenses 1011 faces away from the display panel 100.

The microlens 1011 covers the light-emitting area A of the projection sub-pixel 211, that is, covers the organic light-emitting layer 300 of the OLED 30 in the projection sub-pixel 211 (as shown in FIG. 6b). Therefore, the infrared light emitted by the OLED 30 in the projection sub-pixel 211 can be condensed by the convex surface of the micro lens 1011, so as to achieve the purpose of light collimation.

In this case, after the thin film encapsulation layer 50 is manufactured by the thin film encapsulation technology, the plurality of microlenses 1011 arranged at intervals may be formed on the upper surface of the thin film encapsulation layer 50 by inkjet printing technology.

Alternatively, after the thin-film encapsulation layer 50 is fabricated by the thin-film encapsulation technology, another transparent inorganic thin-film layer can be fabricated, for example, silicon nitride (SiON) is used to form the inorganic thin-film layer. Then, the thin film layer is etched through a dry etch process to form a plurality of microlenses 1011 arranged at intervals.

Alternatively, in some other embodiments of the present application, as shown in FIG. 7b, the collimating structure 101 not only includes the aforementioned microlens 1011, but also includes a light-transmitting film 1012 on the light-exit side surface of the display panel 100.

As shown in FIG. 7c, the above-mentioned light-transmitting film 1012 is located between the microlens 1011 and the display panel 100, and is an integral structure with the microlens 1011.

In this case, after the thin-film encapsulation layer 50 is fabricated by the thin-film encapsulation technology, a transparent resin layer can be formed on the upper surface of the thin-film encapsulation layer 50, and then the transparent resin layer can be imprinted by a nano-imprint process. Thus, a collimating structure 101 as shown in FIG. 7c is formed.

Alternatively, a nano-imprinting process can also be used to form a light-transmitting film 1012 and a plurality of microlenses 1011 integrated with the light-transmitting film 1012. Next, a light-transmitting film 1012 with a plurality of microlenses 1011 is attached to the upper surface of the film encapsulation layer 50.

Alternatively, when the thin-film encapsulation technology is used to fabricate the outermost inorganic thin film 501 in the thin-film encapsulation layer 50, the thickness of the inorganic thin-film layer 501 can be increased, and then the light-transmitting thin film 1012 can be formed through a dry etching process. And a plurality of microlenses 1011 on the upper surface of the transparent film 1012.

In this case, the above-mentioned light-transmitting film 1012 can be used as an inorganic film 501 of the outermost layer (farthest from the pixel defining layer 41) in the film encapsulation layer 50 as shown in FIG. 7d. At this time, the plurality of microlenses 1011 and the inorganic thin film 501 have an integral structure.

It should be noted that FIGS. 7b to 7d are described by taking the light-transmitting film 1012 in the collimating structure 101 not only covering the OLED 30 in the projection sub-pixel 211 but also covering the OLED 30 in the display sub-pixel 210 as an example.

In other embodiments of the present application, as shown in FIG. 7e, the light-transmitting film 1012 may only cover the OLED 30 in the projection sub-pixel 211, and the light-emitting side of the OLED 30 in the display sub-pixel 210 may not need to be provided with the light-transmitting film. 1012.

In some other embodiments of the present application, as shown in FIG. 8a, the collimating structure 101 includes a light-transmitting film 1012 and a plurality of collimating through holes 1013 penetrating the light-transmitting film 1012.

Wherein, as shown in FIG. 8b, the orthographic projection of at least one collimating through hole 1013 on the projection sub-pixel 211 is located in the light-emitting area A of the projection sub-pixel 211, that is, in the organic light-emitting layer 300 of the OLED 30 in the projection sub-pixel 211.

In this way, since the collimating through hole 1013 is filled with air, the air is a light-thin medium relative to the light-transmitting film 1012, that is, the refractive index n1 of the medium (ie air) in the collimating through-hole 1013 is smaller than that of the light-transmitting film 1012. Refractive index n2.

In this case, in the projection sub-pixel 211, after at least a part of the infrared light emitted by the organic light-emitting layer 300 of the OLED 30 is incident into the collimating through hole 1013, it will be totally reflected on the sidewall surface of the collimating through hole 1013, thereby The probability of light incident into the light-transmitting film 1012 is reduced, and the light loss is reduced, so that most of the light can be emitted upward from the aperture of the collimating through hole 1013 to achieve the purpose of light collimation.

In the case that the collimating structure 101 collimates the infrared light emitted by the organic light-emitting layer 300 of the OLED 30 in the projection sub-pixel 211, a plurality of collimating through holes corresponding to the position of the organic light-emitting layer 300 of the same OLED 30 The number of 1013 is inversely proportional to the thickness of the transparent film 1012, and the diameter of the collimating through hole 1013 is proportional to the thickness of the transparent film 1012.

For example, when the collimating effect of the collimating structure 101 is certain, the more the number of the multiple collimating through holes 1013 corresponding to the position of the organic light emitting layer 300 of the same OLED 30, the smaller the diameter of the collimating through holes 1013, the more transparent The thickness of the optical film 1012 is thinner. Alternatively, the smaller the number of the multiple collimating through holes 1013 corresponding to the position of the organic light-emitting layer 300 of the same OLED 30, the larger the diameter of the collimating through holes 1013, and the thicker the thickness of the light-transmitting film 1012.

Therefore, in order to effectively reduce the thickness of the display screen 10, the thickness of the light-transmitting film 1012 in the collimating structure 101 needs to be as small as possible. Therefore, a plurality of collimators corresponding to the position of the organic light-emitting layer 300 of the same OLED 30 can be appropriately increased. The number of the through holes 1013 and the diameter of the collimating through holes 1013 are reduced to ensure that the collimating structure 101 has a good light collimation effect.

The manufacturing method of the collimating structure 101 shown in FIG. 8b may be that after the thin film packaging layer 50 is manufactured by the thin film packaging technology, a photoresist is formed on the upper surface of the thin film packaging layer 50, and then the photoresist is applied Photolithography process (including masking, exposure, and development processes). When the photoresist is a positive photoresist, the part of the photoresist irradiated by light can be developed to form the above-mentioned collimated through hole 1013. Alternatively, when the photoresist is a negative photoresist, the part of the photoresist not irradiated by light can be developed to form the above-mentioned collimated through hole 1013.

In addition, in other embodiments of the present application, as shown in FIG. 8c, the collimating through hole 1013 may also be filled with a light-transmitting material, such as an inorganic light-transmitting material, silicon nitride.

The refractive index of the transparent portion 1014 is smaller than the refractive index of the transparent film 1012. Therefore, after the infrared light emitted by the organic light-emitting layer 300 of the OLED 30 in the projection sub-pixel 211 is incident on the light-transmitting portion 1014, total reflection occurs at the interface between the light-transmitting portion 1014 and the light-transmitting film 1012, thereby reducing the incidence of light. The probability of reaching the light-transmitting film 1012 achieves the purpose of light collimation.

The method for manufacturing the collimating structure 101 shown in FIG. 8c may be that after the thin film packaging layer 50 is manufactured by the thin film packaging technology, a photoresist is formed on the upper surface of the thin film packaging layer 50, and then the photoresist is applied The above-mentioned photolithography process forms the above-mentioned collimated through hole 1013. Next, a chemical vapor deposition (CVD) process is used to deposit silicon nitride, thereby forming an inorganic film layer covering the surface of the light-transmitting film 1012 and a light-transmitting portion 1014 in the collimating through hole 1013.

It should be noted that FIGS. 8a to 8c are described by taking the light-transmitting film 1012 in the collimating structure 101 not only covering the OLED 30 in the projection sub-pixel 211 but also covering the OLED 30 in the display sub-pixel 210 as an example. In other embodiments of the present application, as described above, the light-transmitting film 1012 may only cover the OLED 30 in the projection sub-pixel 211, and the light-emitting side of the OLED 30 in the display sub-pixel 210 does not need to be provided with the light-transmitting film 1012.

The above description is based on the example that the OLED 30 on the display panel 100 is a top-emission light-emitting device, that is, the light emitted by the OLED 30 is emitted from the thin-film encapsulation layer 50 as an example. When the OLED 30 on the above display panel 100 is a bottom-emission light-emitting device, that is, the light-emitting side of the OLED 30 is close to the base substrate 42, and the light emitted by the OLED 30 is emitted from the base substrate 42, as shown in FIG. 9a or 9b, collimated The structure 101 is located on a side surface of the base substrate 42 away from the pixel defining layer 41.

Wherein, in FIG. 9a, the collimating structure 101 has a plurality of microlenses 1011. The collimating structure 101 in FIG. 9 b includes a light-transmitting film 1012 and a plurality of collimating through holes 1013 formed on the light-transmitting film 1012.

In addition, the aforementioned display screen 10 may also include a polarizer (POL) 51 and a heat sink 52 as shown in FIG. 10.

Wherein, the polarizer 51 is located above the collimating structure 101. The polarizer 51 can reduce the reflected light generated when external light irradiates the metal electrode in the display screen 10, such as the cathode 302.

The heat sink 52 is located under the TFT backplane 40 and is used to dissipate heat generated by each OLED 30 in the display panel 100 during the light-emitting process.

Example two

In this example, as in Example 1, the visible light emitting device located in the display sub-pixel 210 and the infrared light emitting device located in the projection sub-pixel 211 are OLED 30. The difference is that in this example, the base substrate 42 is a glass substrate or a hard resin substrate. In this case, the display panel 100 is a hard screen, and the screen cannot be bent.

Based on this, in order to encapsulate each OLED 30 in the display panel 100, as shown in FIG. 11a or 11b, the display panel 100 further includes a cover 53 covering the OLED 30, and as shown in FIG. 12, around the display area of the display panel 100 C frame sealing glue 54 set one week. The display area C of the display panel 100 is used for displaying images, and the first pixel unit 21 is located in the display area C.

The material constituting the cover plate 53 may include glass, transparent hard resin, sapphire, or the like. As shown in FIG. 11a, the cover plate 53 is in contact with the frame sealant 54.

In this case, the OLED 30 on the display panel 100 is a top-emission light-emitting device, that is, the light emitting side of the OLED 30 is located close to the cover plate 53, and when the light emitted by the OLED 30 is emitted from the cover plate 53, the collimating structure 101 is located between the cover plate 53 and Between OLED30.

Wherein, in FIG. 11a, the collimating structure 101 has a plurality of microlenses 1011. The upper surface of the cathode layer 3021 of the OLED 30 can be prepared by an inkjet printing process. Alternatively, the above-mentioned nanoimprinting process can also be used to form a light-transmitting film 1012 and a plurality of microlenses 1011 integrated with the light-transmitting film 1012. Next, a light-transmitting film 1012 with a plurality of microlenses 1011 is attached to the upper surface of the cathode layer 3021 of the OLED 30.

In FIG. 11 b, the collimating structure 101 includes a light-transmitting film 1012 and a plurality of collimating through holes 1013 formed on the light-transmitting film 1012. The collimation structure 101 can be formed by the above-mentioned photolithography process and CVD process, and will not be repeated here.

The above description is based on an example in which the OLED 30 on the display panel 100 is a top-emission light-emitting device. When the OLED 30 on the above-mentioned display panel 100 is a bottom-emission light-emitting device, that is, the light-emitting side of the OLED 30 is close to the base substrate 42, and the light emitted by the OLED 30 is emitted from the base substrate 42, as described above, the collimating structure 101 is located on the substrate A surface of the substrate 42 facing away from the pixel defining layer 41.

Example three

In this example, the above-mentioned visible light emitting device and infrared light emitting device may be a micro light emitting diode (LED) 60 as shown in FIG. 13a.

Among them, the micro LED 60 as shown in FIG. 13b includes a substrate 604, an epitaxial layer 603 grown on the substrate 604, and a first electrode 601, namely a P electrode and a second electrode 602, that is N electrode.

The above-mentioned epitaxial layer 603 mainly includes a P-type semiconductor layer, an N-type semiconductor layer, and a light-emitting layer located between the P-type semiconductor and the N-type semiconductor. A P-N junction is formed between the P-type semiconductor layer and the N-type semiconductor layer.

After applying voltage to the first electrode 601 and the second electrode 602, the electrons in the N-type semiconductor layer are pushed to the P-type semiconductor layer, and recombine with the holes in the P-type semiconductor layer in the light-emitting layer, in the form of photons The energy is emitted, so that the micro LED 60 emits light.

In the manufacturing process, when the materials of the light-emitting layer are different, the wavelength of the light emitted by the manufactured micro LED 60 is different. Furthermore, in the same first pixel unit 21, each display sub-pixel 210 can be provided with a micro LED for emitting visible light of different colors, and a micro LED 60 for emitting infrared light can be provided in the projection sub-pixel 211 of the first pixel unit 21 .

In addition, as shown in FIG. 13a, the display panel 100 further includes a silicon substrate 61 on which the pixel driving circuit 403 is formed. The multiple micro LEDs 60 are flip-chip mounted on the silicon substrate 61 as shown in FIG. 13c, and are arranged in an array as shown in FIG. 13a.

On this basis, in order to control a plurality of micro LEDs 60 arranged in an array, so that the display panel 100 can perform screen display. As shown in FIG. 14a, the display panel 100 further includes a plurality of first electrode lines 62 and a plurality of second electrode lines 63.

Wherein, the plurality of first electrode lines 62 are electrically connected to the plurality of first electrodes 601 of the micro LED 60 located in the same row along the first direction X.

The plurality of second electrode wires 63 are insulated from the above-mentioned first electrode wires 62, and are electrically connected to the second electrodes 602 of the plurality of micro LEDs 60 in the same column along the second direction Y.

The first direction X and the second direction Y are arranged to cross each other, and the plane XOY where the first direction X and the second direction Y are located is the plane of the silicon substrate 61 for carrying the micro LED 60.

It can be seen from the foregoing that the second electrode line 63 is insulated from the first electrode line 62, and the display panel 100 further includes a first insulation 64 and a second insulation layer 65.

The first insulating layer 64 is located between the micro LED 60 and the plurality of first electrode lines 62. In order to electrically connect the first electrode line 62 and the first electrode 601 of the micro LED 60, a plating through hole (PTH) may be provided on the first insulating layer 64 and corresponding to the position of the first electrode 601 of the micro LED 60. The first electrode line 62 is electrically connected to the first electrode 601 of each micro LED 60 in the same row through each PTH.

The second insulating layer 65 is located between the plurality of first electrode lines 62 and the second electrode lines 63. As mentioned above, in order to electrically connect the second electrode line 63 and the second electrode 602 of the micro LED 60, a PTH can be provided on the second insulating layer 65 and the first insulating layer 64 and corresponding to the position of the second electrode 602 of the micro LED 60 , So that the second electrode line 63 is electrically connected to the second electrode 602 of each micro LED 60 in the same row through each PTH.

In this case, signals may be provided to the first electrode lines 62 row by row to gate the first electrodes 601 of the micro LED 60 row by row. After the first electrode 601 of a row of micro LEDs 60 is gated, a signal is provided to each second electrode line 63 at the same time to drive the row of micro LEDs 60 to emit light. In this way, within one image frame, multiple arrays of micro LEDs 60 can emit light row by row.

In some embodiments of the present application, the collimating structure 101 for condensing the infrared light emitted by the micro LED 60 in the projection sub-pixel 211, as shown in FIG. 14a, includes a light-transmitting surface on the light-emitting side surface of the display panel 100 A film 1012, and a plurality of micro lenses 1011 on the light-transmitting film 1012.

After the above-mentioned display panel 100 is prepared, the light-transmitting film 1012 and a plurality of microlenses 1011 integrated with the light-transmitting film 1012 can be formed by a nanoimprinting process. Next, a light-transmitting film 1012 with a plurality of microlenses 1011 is attached to the light-emitting surface of the display panel 100.

Or, in other embodiments of the present application, as shown in FIG. 14b, the collimating structure 101 may include a light-transmitting film 1012 and a plurality of collimating through holes 1013 formed on the light-transmitting film 1012. The collimation structure 101 shown in FIG. 14b can be performed by using the above-mentioned photolithography process and CVD process, which will not be repeated here.

Alternatively, in some other embodiments of the present application, a light-transmitting portion 1014 having a refractive index smaller than that of the light-transmitting film 1012 may also be provided in the collimating through hole 1013.

To sum up, by arranging the projection sub-pixels 211 for emitting infrared light in the display panel 100, the infrared projector 70 (as shown in FIG. 15a) composed of a plurality of projection sub-pixels 211 can be embedded (in- cell), embedded in the display panel 100. In this case, the preparation of the above-mentioned infrared projector 70 can be completed in the process of making each display sub-pixel 210 of the display panel 100.

In this case, as shown in FIG. 15b, since the infrared projector 70 composed of multiple projection sub-pixels 211 is embedded in the solution of the display panel 100, it can be composed of multiple projection sub-pixels 211. The infrared projector 70 can replace a vertical cavity surface emitting laser (VCSEL) 80 for emitting infrared light. In this way, there is no need to open a part of the non-display area (the area where the display sub-pixel 210 is not provided) as shown in FIG. 15c for placing the VCSEL 80. Thereby, the size of the display screen frame (black part) can be reduced, and the purpose of increasing the screen ratio of the display screen 10.

In addition, according to the effective resolution of the display screen 10, that is, the resolution provided by all the display sub-pixels 210 in the display panel 100, the number of projection sub-pixels 211 provided in the display panel 100 can be increased, thereby increasing the number of infrared projection sources, so that More infrared rays can be incident on the measured object, such as a human face, to achieve the purpose of improving the accuracy of 3D depth scanning. In this way, there is no need to provide a diffractive optical element (DOE) in the display screen 10 for optical replication of the infrared rays emitted by the VCSEL, so that the manufacturing cost of the display screen 10 can be reduced.

In addition, the display screen 10 also includes a collimating structure 101 arranged on the light emitting side of the display panel 100. The collimating structure 101 can collimate the infrared light emitted by the projection sub-pixel 211, reduce the light loss of the infrared light, and effectively improve the utilization rate of the infrared light.

Under the premise of satisfying the 3D depth scanning accuracy, in some embodiments of the present application, as shown in FIG. 3a, FIG. 3b or FIG. 3c, only the above-mentioned first pixel unit 21 is provided in the entire display area of the display panel 100. In this case, each projection sub-pixel 211 of the infrared projector 70 as an infrared projection source may be evenly distributed in the display area of the display panel 100. It is helpful to improve the range and accuracy of 3D depth scanning.

Alternatively, in some other embodiments of the present application, as shown in FIG. 16, the above-mentioned display panel 100 further includes a plurality of second pixel units 22 used for display. The second pixel unit 22 only includes a plurality of display sub-pixels 210 for emitting different visible lights.

The number of display sub-pixels 210 in the second pixel unit 22 is the same as the number of display sub-pixels 210 in the first pixel unit 21. For example, in FIG. 16, the first pixel unit 21 has three display sub-pixels 210 for emitting R light, G light, and B light, respectively. The second pixel unit 22 also has display sub-pixels 210 for emitting R light, G light, and B light.

In this way, the projection sub-pixels 211 in the infrared projector 70 as the infrared projection source are distributed only in a part of the display area, so that the influence of the projection sub-pixels 211 on the resolution of the display panel 100 can be reduced.

In addition, in order to realize the above-mentioned 3D depth scanning, the electronic device 01 with the above-mentioned display screen 10 is shown in FIG. 15a, and further includes an imaging sensor 71 and a control and calculation unit 72.

In some embodiments of the present application, time of light (TOF) imaging technology may be used. In this case, the infrared projector 70 composed of a plurality of projection sub-pixels 211 continuously transmits light pulses to the object to be measured. The imaging sensor 71 receives light returned from the object to be measured. Next, the control and calculation unit 72 calculates the flight (round trip) time of the light pulse to determine the distance of the object to be measured to achieve the purpose of 3D depth scanning.

In some other embodiments of the present application, the light emitted by the infrared projector 70 composed of a plurality of projection sub-pixels 211 is converged by the collimating structure 101 and then projected onto the surface of the object to be measured. When light is irradiated on the surface of the object to be measured, a patterned spot can be formed, and the patterns of the spots in any two places in the space can be different.

Then, the imaging sensor 71 collects light spot patterns on different surfaces of the measured object. Next, the control and calculation unit 72 recognizes and calculates the pattern of light spots on different surfaces of the measured object, and obtains corresponding depth information to achieve the purpose of 3D depth scanning.

It should be noted that each projection sub-pixel 211 constituting the infrared projector 70 is distributed in different first display units 21. However, each first display unit 21 on the display panel 100 is lighted up row by row, so each of the projection sub-pixels 211 arranged in the array will also emit infrared light row by row. In this case, the control and calculation unit 72 can synchronize the time sequence of the information collected by the imaging sensor 71 to solve the problem of the depth information delay caused by the first display unit 21 being lit line by line.

It can be seen from the above that the electronic device 01 provided by the embodiment of the present application constitutes the infrared projector 70 through the respective projection sub-pixels 211 integrated in the display panel 100, which can realize active 3D depth scanning. Compared with the binocular imaging technology without infrared projection source, it is not easy to be affected by external factors such as illumination changes, light and darkness.

When the electronic device 01 provided by the embodiment of the present application adopts the above-mentioned 3D depth scan, it can not only recognize a human face, but also has the following application scenarios.

scene one

In the case of low light in the shooting environment, at least a part of the display panel 100 can be controlled to emit light in the OLED 30 or micro LED 60 in the sub-pixel 211, so as to supplement the light of the infrared camera, which is beneficial for the infrared camera to change images in the dark Capture, improve the picture quality (PQ) of the captured image.

Scene two

The light-emitting timing of the OLED 30 or the micro LED 60 in each projection sub-pixel 211 is controlled by the encoding timing, so that the electronic device 01 can emit different infrared light signals, and then remotely control different devices such as air conditioners and televisions through infrared communication.

Scene three

The display panel 100 with projection sub-pixels 211 can also realize gesture recognition. The OLED 30 or the micro LED 60 in the projection sub-pixel 211 emits infrared light to irradiate the user's hand, and the imaging sensor 71 collects the reflected light from the hand or the light spot on the hand surface. Then the control and calculation unit 72 calculates the acquisition result of the imaging sensor 71, and can obtain the depth information of the hand in real time, thereby achieving the purpose of gesture recognition.

Since a plurality of projection sub-pixels 211 may be evenly distributed in the entire display area of the display panel 100 or in most of the display area of the display panel 100, the electronic device 01 may have a large number of uniformly distributed infrared projection sources. In this way, the infrared rays projected to the hand will be more and the distribution will be more even, achieving the purpose of improving the accuracy of gesture recognition.

In addition, since the distribution area of the plurality of projection sub-pixels 211 in the display panel 100 is relatively large, the range of the 3D depth scan is also relatively wide. Therefore, when the user's hand changes significantly, accurate gesture recognition can still be achieved.

Scene four

According to the software two-dimensional code pattern information, it is possible to control the brightness or darkness of the projection sub-pixels 211 arranged in an array in the display panel 100, so that the display panel 100 displays infrared two-dimensional code information. Since human eyes cannot see infrared light, when the electronic device 01 provided in this application embodiment is used for QR code payment, it can effectively protect the user's personal information from being leaked.

Scene five

The electronic device 01 provided by the embodiment of the present application can control the brightness or darkness of the projection sub-pixels 211 arranged in the array while displaying the security information, so as to display the infrared watermark. The infrared watermark will not affect the user's viewing of movies. However, when a camera with an infrared camera is used to capture the displayed content, the above infrared watermark can be seen in the captured photos, so that the source of the information release can be obtained.

The above are only specific implementations of this application, but the protection scope of this application is not limited to this. Any change or replacement within the technical scope disclosed in this application shall be covered by the protection scope of this application . Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (16)

1. A display screen, characterized in that it comprises:

   A display panel, the display panel includes a plurality of first pixel units; each of the first pixel units includes at least one display sub-pixel for emitting different visible light, and at least one projection sub-pixel for emitting infrared light;

   The collimating structure is arranged on the light emitting side of the display panel and is used to converge the infrared light emitted by the projection sub-pixels.
2. The display screen according to claim 1, wherein the display panel further comprises: a plurality of visible light emitting devices;

   Each of the visible light emitting devices corresponds to one of the display sub-pixels, and each of the visible light emitting devices is located in the display sub-pixel corresponding to the visible light emitting devices;

   A plurality of infrared light-emitting devices; each of the infrared light-emitting devices corresponds to the projection sub-pixel, and each of the infrared light-emitting devices is located in the projection sub-pixel corresponding to the infrared light-emitting device.
3. The display screen of claim 2, wherein the visible light emitting device and the infrared light emitting device are organic light emitting diodes;

   The display panel further includes a pixel defining layer;

   A plurality of openings are provided on the pixel defining layer, and there is a retaining wall between two adjacent openings;

   The plurality of openings includes a plurality of first openings and a plurality of second openings;

   Each of the first openings corresponds to one of the display sub-pixels, and each of the first openings is located in the display sub-pixels corresponding to the first openings; each of the visible light emitting devices is associated with one The first opening corresponds to, and the organic light emitting layer of the visible light emitting device is located in the first opening corresponding to the visible light emitting device;

   Each of the second openings corresponds to one of the projection sub-pixels, and each of the second openings is located in the projection sub-pixels corresponding to the second openings; each of the infrared light emitting devices is One of the second openings corresponds to, and the organic light emitting layer of each infrared light emitting device is located in the second opening corresponding to the infrared light emitting device.
4. 4. The display screen of claim 3, wherein the display panel further comprises a thin film packaging layer covering the organic light emitting diode;

   The light output side of the organic light emitting diode is close to the thin film packaging layer, and the collimating structure is located on a side surface of the thin film packaging layer away from the pixel defining layer.
5. The display screen according to claim 4, wherein the thin film encapsulation layer comprises a multilayer inorganic encapsulation layer and a multilayer organic encapsulation layer; the inorganic encapsulation layer and the organic encapsulation layer are alternately arranged;

   The collimating structure and the inorganic encapsulation layer farthest from the pixel defining layer in the thin film encapsulation layer are an integral structure.
6. The display screen according to claim 3, wherein the display panel further comprises a cover plate covering the organic light emitting diode, and a frame sealant arranged around the display area of the display panel; the cover plate Contact with the frame sealant; wherein, the first pixel unit is located in the display area;

   The light emitting side of the organic light emitting diode is close to the cover plate, and the collimating structure is located between the cover plate and the organic light emitting diode.
7. The display screen according to claim 3, wherein the display panel further comprises a base substrate carrying the pixel defining layer;

   The light output side of the organic light emitting diode is close to the base substrate, and the collimating structure is located on a side surface of the base substrate away from the pixel defining layer.
8. The display screen of claim 2, wherein the visible light emitting device and the infrared light emitting device are miniature light emitting diodes;

   The display panel includes a silicon substrate, and a plurality of the micro light-emitting diodes are flip-chip mounted on the silicon substrate and arranged in an array.
9. 8. The display screen of claim 8, wherein the display panel further comprises:

   A plurality of first electrode lines are electrically connected to a plurality of first electrodes in the same row along a first direction;

   A plurality of second electrode wires are insulated from the first electrode wires, and are electrically connected to a plurality of second electrodes of the plurality of micro light emitting diodes in the same column along the second direction;

   Wherein, the first direction and the second direction cross.
10. The display screen of claim 9, wherein the display panel further comprises:

    The first insulating layer is located between the micro light emitting diode and the first electrode line;

    The second insulating layer is located between the plurality of first electrode lines and the plurality of second electrode lines.
11. The display screen according to any one of claims 1-9, wherein the collimating structure comprises a plurality of microlenses; the microlenses cover the light-emitting area of the projection sub-pixel, and the microlens The convex surface faces away from the display panel.
12. 11. The display screen of claim 11, wherein the collimating structure further comprises a light-transmitting film;

    The light-transmitting film is located between the microlens and the display panel, and is an integral structure with the microlens.
13. The display screen according to any one of claims 1-9, wherein the collimating structure comprises a light-transmitting film and at least one collimating through hole penetrating the light-transmitting film;

    The orthographic projection of the collimating through hole on the projection sub-pixel is located in the light-emitting area of the projection sub-pixel.
14. The display screen of claim 13, wherein the collimating through hole is filled with a light-transmitting portion, and the refractive index of the light-transmitting portion is smaller than the refractive index of the light-transmitting film.
15. The display screen of claim 1, wherein the display panel further comprises a plurality of second pixel units for display;

    The second pixel unit only includes at least one display sub-pixel for emitting different visible lights;

    The number of display sub-pixels in the second pixel unit is the same as the number of display sub-pixels in the first pixel unit.
16. An electronic device, comprising a housing and the display screen according to any one of claims 1-15; the display screen is mounted on the housing.

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