JP6724973B2 - Light emitting device and electronic device - Google Patents

Description

The present invention relates to a light emitting device, a method for manufacturing a light emitting device, and an electronic device equipped with the light emitting device.

As an example of the light emitting device, for example, an electro-optical device (Patent Document 1) in which organic electroluminescence (hereinafter referred to as organic EL) elements are arranged in a matrix is proposed. The electro-optical device described in Patent Document 1 is an active matrix light emitting device that has thin film transistors and has pixels that emit light arranged in a matrix. In the pixel, a light reflection layer, a translucent insulating film, a first electrode (pixel electrode), a partition layer, a light emitting functional layer, and a second electrode (counter electrode) are sequentially stacked.

A current is supplied to the light emitting functional layer from the pixel electrode in a region not covered with the partition layer, and the light emitting functional layer emits light. That is, the region not covered with the partition layer (region where the partition layer is not formed) becomes the light emitting region. Further, the pixel electrode is provided so as to cover the contact hole, and the pixel electrode and the thin film transistor are electrically connected through the contact hole. That is, a portion where the pixel electrode and the thin film transistor are electrically connected becomes a contact region. The pixel electrode is provided across the light emitting region and the contact region.
The translucent insulating film has a role of adjusting the optical distance between the light reflection layer and the counter electrode, and the thickness of the translucent insulating film is such that the light emitting region of the first pixel>the second pixel The light emitting region>the light emitting region of the third pixel>the contact hole forming region (contact region) is set.

With this structure (optical resonance structure), the light emitted from the light emitting functional layer reciprocates between the light reflecting layer and the counter electrode, and the optical distance between the light reflecting layer and the counter electrode, that is, the light transmitting property. Light having a resonance wavelength corresponding to the thickness of the insulating film is selectively amplified and emitted from each pixel. The electro-optical device described in Patent Document 1 has, for example, light in the red wavelength range having a peak wavelength of 610 nm, light in the green wavelength range having a peak wavelength of 540 nm, and blue light having a peak wavelength of 470 nm due to the optical resonance structure. Light in the wavelength range of, that is, light with high color purity is emitted from each pixel as display light, and has excellent color reproducibility.

JP, 2009-134067, A

As described above, in the electro-optical device described in Patent Document 1, since there is a relation of the film thickness of the translucent insulating film in the light emitting region>the film thickness of the translucent insulating film in the contact region, the light emitting region And a contact region are formed with a boundary having a different optical distance (a boundary having a different thickness of the translucent insulating film).

The electro-optical device described in Patent Document 1 has a problem that it is difficult to widen the light emitting region when the light emitting region is widened in order to obtain a brighter display, because the boundary is an obstacle.
Specifically, when the light emitting area is widened beyond the boundary, portions having different optical distances are generated in the light emitting area. Since the resonance wavelength changes when the optical distance is different, light having a different resonance wavelength is emitted from the light emitting region, and the color purity of the light emitted from the light emitting region is reduced. Therefore, there is a problem that it is difficult to widen the light emitting region beyond the boundary.

The present invention has been made to solve at least a part of the problems described above, and can be realized as the following modes or application examples.

Application Example 1 In a light emitting device according to this application example, a transistor, a light reflection layer provided above the transistor, a light reflection layer that covers the light reflection layer, and a portion having a first layer thickness and the first layer are provided. A first insulating layer having a second layer thickness portion thicker than the thick portion and a third layer thickness portion thicker than the second layer thickness portion, and on the first insulating layer A light-transmitting pixel electrode, a second insulating layer that covers a peripheral portion of the pixel electrode, a light-emitting functional layer that covers the pixel electrode and the second insulating layer, and the light-emitting functional layer. A counter electrode having a light-reflecting property and a light-transmitting property, and a conductive layer which is provided on the portion having the first layer thickness and at least a part of which is planarly overlapped with the pixel electrode. The pixel electrode has a first pixel electrode provided in the first layer thickness portion, a second pixel electrode provided in the second layer thickness portion, and the third layer thickness. And a third pixel electrode provided in a portion of the first pixel electrode, the second pixel electrode, and the third pixel electrode, and the third pixel electrode is provided through the conductive layer. It is connected to.

The conductive layer is provided on the portion having the first layer thickness, and a signal from the transistor is supplied to the pixel electrode through the conductive layer. The conductive layer overlaps the pixel electrode in a plane, and the region where the conductive layer is provided serves as a contact region that connects the transistor and the pixel electrode. The peripheral portion of the pixel electrode is covered with the second insulating layer, and a current is supplied to the light emitting functional layer from the pixel electrode in a region not covered with the second insulating layer in response to a signal from the transistor. Emits light. That is, a region not covered with the second insulating layer becomes a light emitting region where the light emitting functional layer emits light. The pixel electrode is provided across the contact region and the light emitting region.

The light emitted from the light emitting functional layer (light emitting region) reciprocates between the light reflecting layer and the counter electrode, resonates according to the optical distance between the light reflecting layer and the counter electrode, and emits light of a specific wavelength. Is amplified. The optical distance changes depending on the layer thickness of the first insulating layer. Since the first insulating layer has three kinds of layer thicknesses, light of three kinds of resonance wavelengths is emitted. For example, by adjusting the layer thickness of the first insulating layer so that light of three wavelengths of blue, green, and red is amplified, the color purity of the blue, green, and red light emitted in the light emitting region is adjusted. Can be increased.

The first pixel electrode is provided in the portion having the first layer thickness, the second pixel electrode is provided in the portion having the second layer thickness, and the third pixel electrode is provided in the portion having the third layer thickness. The layer thickness of the first insulating layer in the region where each pixel electrode is provided is constant. That is, the optical distance of the region where the pixel electrode is provided is constant.

Since the optical distance of the area where the pixel electrode is provided is constant, the optical distance changes even if the distance between the light emitting area and the contact area of the pixel electrode is reduced and the light emitting area of the pixel electrode is widened. There is nothing to do. In other words, in the known technique (Japanese Patent Application Laid-Open No. 2009-134067), the regions where the pixel electrodes are provided have boundaries having different optical distances. Since the target distance is constant, even if the light emitting region of the pixel electrode is widened, the resonance wavelength does not change (the color purity is lowered), and the light emitting region can be widened as compared with the known technique. Therefore, the luminous intensity of the light emitted in the light emitting region can be increased without lowering the color purity of the light emitted in the light emitting region. Therefore, the light emitting device according to this application example can provide display with high color purity and luminous intensity, that is, display with bright and vivid colors.

Application Example 2 In the light emitting device described in the above application example, the first insulating layer has a first insulating film, a second insulating film, and a third insulating film that are sequentially stacked from the reflective layer side. The first insulating film has the first layer thickness, and the portion where the first insulating film and the second insulating film are stacked has the second layer thickness and the first insulating film has the second layer thickness. The portion in which the first insulating film, the second insulating film, and the third insulating film are stacked has the third layer thickness, and the conductive layer includes the first conductive layer and the second conductive layer. A third conductive layer, the first pixel electrode is in direct contact with the first conductive layer, and the second pixel electrode is through a first contact hole penetrating the second insulating film. Is connected to the second conductive layer, and the third pixel electrode is connected to the third conductive layer via a second contact hole penetrating the second insulating film and the third insulating film. Preferably.

The portion having the first layer thickness is composed of the first insulating film, the portion having the second layer thickness is composed of the first insulating film and the second insulating film, and the portion having the third layer thickness is the first insulating film. And a second insulating film and a third insulating film. By controlling the first insulating film, the second insulating film, and the third insulating film to have a uniform film thickness, the film thickness of the first layer thickness portion and the film thickness of the second layer thickness portion are controlled. , And the uniformity of the film thickness of the third layer thickness portion can be improved. Therefore, the optical distance of the area where the first pixel electrode is provided, the optical distance of the area where the second pixel electrode is provided, and the optical distance of the area where the third pixel electrode is provided. Can be improved, the variation in the resonance wavelength of the light emitted from each pixel electrode can be reduced, and the color purity of the light emitted from the light emitting region of each pixel electrode can be increased.

Application Example 3 In the light emitting device according to the application example described above, the first pixel electrode is provided in the portion having the first layer thickness, and the second pixel electrode has the second layer thickness. It is preferably provided in the part.

By disposing the first pixel electrode in the portion having the first layer thickness, light having a resonance wavelength corresponding to the portion having the first layer thickness can be emitted from the light emitting region of the first pixel electrode. By disposing the second pixel electrode in the portion having the second layer thickness, light having a resonance wavelength corresponding to the portion having the second layer thickness can be emitted from the light emitting region of the second pixel electrode. Therefore, the color purity of light emitted from the light emitting regions of the first pixel electrode and the second pixel electrode can be increased.

Application Example 4 In the light emitting device described in the above application example, the first pixel electrode, the second pixel electrode, and the third pixel electrode are arranged side by side in the first direction, It is preferable that the first layer thickness portion and the second layer thickness portion have a rectangular shape extending in a second direction intersecting with the first direction.

The first pixel electrode is arranged in the portion having the first layer thickness and emits light having the first resonance wavelength. The second pixel electrode is disposed in the portion having the second layer thickness and emits light having the second resonance wavelength. The third pixel electrode is arranged in the portion having the third layer thickness and emits light having the third resonance wavelength. The portion that emits the light of the first resonance wavelength, the portion that emits the light of the second resonance wavelength, and the portion that emits the light of the third resonance wavelength have a rectangular shape extending in the second direction. .. A portion that emits light having a first resonance wavelength (a portion having a first layer thickness) and a portion that emits light having a second resonance wavelength (a second layer thickness) in a first direction intersecting the second direction. Portion) and a portion (third layer thickness portion) that emits light of the third resonance wavelength are repeatedly arranged, so that the portions that emit three kinds of colors are in a stripe arrangement (display area). Regions) can be formed.

Application Example 5 In the light emitting device according to the above application example, the first insulating layer includes a first insulating film and an organic insulating layer that are sequentially stacked on the light reflecting layer side, and the organic insulating layer is formed. The layer has a first flat portion and a second flat portion thicker than the first flat portion, the first insulating film has the first layer thickness, and the first insulating film is The portion where the first flat portion is laminated has the second layer thickness, and the portion where the first insulating film and the second flat portion are laminated is the third layer thickness. And the conductive layer has a first conductive layer, a second conductive layer and a third conductive layer, and the first pixel electrode is in direct contact with the first conductive layer, and The second pixel electrode is connected to the second conductive layer through a first contact hole that penetrates the first flat portion, and the third pixel electrode penetrates the second flat portion. It is preferably connected to the third conductive layer through a second contact hole.

Since the organic insulating layer can be formed using an inexpensive device such as coating or printing, as compared with an inorganic insulating layer (eg, silicon oxide) formed using an expensive device such as plasma CVD or sputtering, It can be formed at low cost.

Application Example 6 In the light emitting device according to the application example described above, the organic insulating layer has a first organic insulating film and a second organic insulating film formed of a photosensitive resin material, It is preferable that the flat portion is formed of the first organic insulating film, and the second flat portion is formed of the first organic insulating film and the second organic insulating film.

Since the organic insulating film can be patterned only by the photolithography process using a photosensitive resin material, the process is simpler than the patterning method of the inorganic insulating film (for example, silicon oxide) that requires an etching process in addition to the photolithography process. It is possible to improve productivity.

Application Example 7 A light emitting device according to this application example includes a first transistor, a second transistor, a third transistor, a first transistor, a second transistor, and a third transistor above the first transistor, the second transistor, the third transistor, and the third transistor. A light reflection layer provided, a portion having a first layer thickness that covers the light reflection layer, a portion having a second layer thickness thicker than the portion having the first layer thickness, and the second layer thickness. A first insulating layer having a third layer thickness thicker than the first portion, a first pixel electrode provided on the first layer thickness portion, and a first transistor electrically connected to the first transistor. Electrically connected first relay electrode, a second pixel electrode provided on the portion having the second layer thickness, and a second relay electrode electrically connected to the second transistor. A third pixel electrode provided on the third layer thickness portion, a third relay electrode electrically connected to the third transistor, a counter electrode, and the first electrode. A light emitting functional layer provided between the pixel electrode and the counter electrode, between the second pixel electrode and the counter electrode, and between the third pixel electrode and the counter electrode; Of the relay electrode is connected to the first pixel electrode via a first connecting portion provided in the portion of the first layer thickness, and the second relay electrode is of the portion of the second layer thickness. Is connected to the second pixel electrode via a second connecting portion provided on the third relay electrode, and the third relay electrode is connected to the second connecting electrode provided on a portion having the third layer thickness. It is characterized in that it is connected to three pixel electrodes.

According to this, the distance between the light emitting region and the contact region in the pixel electrode can be reduced, and the light emitting region in the pixel electrode can be widened. Therefore, the light emitting device according to this application example can provide display with high color purity and luminous intensity, that is, display with bright and vivid colors.

Application Example 8 In the light emitting device described in the above application example, a first light emitting region is defined on the first pixel electrode, and a second light emitting region is defined on the second pixel electrode. A second insulating layer defining a third light emitting region on the third pixel electrode is further provided, and the first light emitting region is provided on the portion having the first layer thickness, and the second light emitting region is provided. The region may be provided on the portion having the second layer thickness, and the third light emitting region may be provided on the portion having the third layer thickness.

Application Example 9 In the light emitting device according to the application example described above, the portion having the first layer thickness is provided from the first light emitting region to the first connection portion, and the second layer thickness is provided. Is provided so as to extend from the second light emitting region to the second connecting portion, and the portion having the third layer thickness is provided so as to reach from the third light emitting region to the third connecting portion. You may be asked.

Application Example 10 In the light emitting device according to the above application example, a fourth light emitting region is further included, and the portion having the second layer thickness extends over the second light emitting region and the fourth light emitting region. It may be provided.

Application Example 11 In the light emitting device described in the above application example, the portion having the first layer thickness is provided so as to surround the first connection portion, and the portion having the second layer thickness is the second layer thickness. The third layer thickness portion may be provided so as to surround the connection portion, and the third layer thickness portion may be provided so as to surround the third connection portion.

Application Example 12 In the light emitting device according to the application example described above, the first insulating layer includes a first insulating film, a second insulating film, and a third insulating film, which are sequentially stacked from the reflective layer side. And a first conductive portion that is connected to the first relay electrode through a first contact hole that penetrates the first insulating film and that is in contact with the first pixel electrode. A third contact hole having a layer, the second connection portion being connected to the second relay electrode via a second contact hole penetrating the first insulating film and penetrating the second insulating film. A second conductive layer connected to the second pixel electrode via a third contact portion, and the third connection portion has the third relay electrode through a fourth contact hole penetrating the first insulating film. And a third conductive layer connected to the third pixel electrode via a fifth contact hole penetrating the second insulating film and the third insulating film.

Application Example 13 In the light emitting device described in the above application example, the fourth transistor, the fourth pixel electrode provided on the portion having the second layer thickness, and the fourth transistor are electrically connected to each other. And a fourth relay electrode connected to the fourth pixel electrode, wherein the fourth relay electrode is connected to the fourth pixel electrode through a fourth connection portion provided in the portion having the second layer thickness. The first insulating film and the second insulating film may be provided so as to fill the space between the second connecting portion and the fourth connecting portion.

Application Example 14 An electronic device according to this application example is characterized by including the light emitting device described in the above application example.

Since the electronic device according to this application example includes the light emitting device described in the above application example, bright and vivid display can be provided. For example, the light emitting device described in the above application example can be applied to an electronic device having a display unit such as a head mounted display, a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, a navigator.

Application Example 15 In the method for manufacturing a light emitting device according to this application example, a transistor, a light reflecting layer provided above the transistor, a first layer thickness portion covering the light reflecting layer, and a second layer. A first insulating layer having a layer thickness portion and a third layer thickness portion, a pixel electrode provided on the first layer thickness portion, and a second electrode covering a peripheral portion of the pixel electrode. An insulating layer, a light emitting functional layer that covers the pixel electrode and the second insulating layer, a counter electrode that covers the light emitting functional layer, and a conductive layer provided on the portion having the first layer thickness. The pixel electrode includes a first pixel electrode provided in the portion having the first layer thickness, a second pixel electrode provided in the portion having the second layer thickness, and the third layer. A third pixel electrode provided in a thick portion, and the first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer. A method of manufacturing a connected light emitting device, comprising: forming the light reflecting layer; forming a first insulating film so as to have the first layer thickness; and forming the conductive layer. And a step of forming a second insulating film so as to have the second layer thickness between the first insulating film and the first insulating film, and the third insulating film between the first insulating film and the second insulating film. Forming a third insulating film so as to have a layer thickness, and patterning the second insulating film and the third insulating film to form a portion having the first layer thickness and the second layer thickness. Forming a first insulating layer having a portion and a portion having the third layer thickness, and a first contact hole exposing a part of the conductive layer at the portion having the second layer thickness. And a step of forming a second contact hole exposing a part of the conductive layer in the third layer thickness part, and partially overlapping the conductive layer in the first layer thickness part. The first pixel electrode, the second pixel electrode covering the portion having the second layer thickness, the second pixel electrode, and the second contact hole covering the portion having the third layer thickness. And a step of forming the third pixel electrode.

The light emitting device manufactured by the manufacturing method according to this application example has a structure in which the light reflecting layer, the first insulating layer, the pixel electrode, the light emitting functional layer, and the counter electrode are stacked, and the light emitting functional layer emits light. The light travels back and forth between the light reflecting layer and the counter electrode, resonates according to the optical distance between the light reflecting layer and the counter electrode, and the light of a specific wavelength is amplified. The optical distance changes depending on the layer thickness of the first insulating layer. Since the first insulating layer is formed so as to have three types of layer thickness, it emits light of three types of specific wavelengths. For example, when the first insulating layer is formed so that light of three wavelengths of blue, green, and red are selectively amplified, the color purity of blue, green, and red light emitted from the light emitting functional layer is increased. be able to.

The first pixel electrode is formed on a portion of the first insulating layer having a first layer thickness, the second pixel electrode is formed on a portion of the first insulating layer having a second layer thickness, and the third pixel electrode is formed. The electrode is formed in the third layer thickness portion of the first insulating layer, each pixel electrode is connected to the conductive layer, and the signal from the transistor is supplied through the conductive layer. In the area where each pixel electrode is formed, the optical distance (layer thickness of the first insulating layer) is constant, so that the resonance wavelength changes (color (Decrease in purity) does not occur. That is, as compared with a known technique (Japanese Patent Laid-Open No. 2009-134067) in which a region where a pixel electrode is provided has boundaries with different optical distances, the light emitting region is widened without lowering the color purity. It is possible to increase the intensity of the light emitted by. Therefore, the light emitting device according to this application example can provide display with high color purity and luminous intensity, that is, display with bright and vivid colors.

1 is a schematic plan view showing the configuration of an organic EL device according to Embodiment 1. FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the organic EL device according to the first embodiment. FIG. 3 is a schematic plan view showing a characteristic portion of a light emitting pixel. FIG. 4 is a schematic cross-sectional view taken along the line A-A′ of FIG. 3. FIG. 4 is a schematic cross-sectional view taken along the line B-B′ of FIG. 3. FIG. 4 is a schematic cross-sectional view taken along the line C-C′ of FIG. 3. FIG. 4 is a schematic cross-sectional view taken along the line D-D′ of FIG. 3. FIG. 4 is a schematic cross-sectional view taken along the line E-E′ of FIG. 3. 3 is a process flow showing a method for manufacturing an organic EL device. FIG. 3 is a schematic cross-sectional view showing the state of the organic EL device after each step. FIG. 3 is a schematic cross-sectional view showing the state of the organic EL device after each step. 3 is a schematic cross-sectional view showing the configuration of the organic EL device according to Embodiment 2. FIG. 3 is a schematic cross-sectional view showing the configuration of the organic EL device according to Embodiment 2. FIG. 3 is a process flow showing a method for manufacturing an organic EL device. FIG. 3 is a schematic cross-sectional view showing the state of the organic EL device after each step. FIG. 3 is a schematic cross-sectional view showing the state of the organic EL device after each step. Schematic of a head mounted display. FIG. 9 is a schematic plan view showing the configuration of an organic EL device according to Modification 1. FIG. 9 is a schematic plan view showing the configuration of an organic EL device according to Modification 2.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Such an embodiment represents one aspect of the present invention, does not limit the present invention, and can be arbitrarily modified within the scope of the technical idea of the present invention. Further, in each of the following drawings, the scale of each layer or each portion is different from the actual scale in order to make each layer or each portion recognizable in the drawings.

(Embodiment 1)
"Outline of organic EL device"
The organic EL device 100 according to the first embodiment is an example of a light emitting device and has an optical resonance structure capable of enhancing the color purity of display light.
First, the outline of the organic EL device 100 according to the present embodiment will be described with reference to FIGS. 1 to 3. 1 is a schematic plan view showing the configuration of the organic EL device, FIG. 2 is an equivalent circuit diagram showing the electrical configuration of the organic EL device, and FIG. 3 is a schematic plan view showing the characteristic portion of the luminescent pixel. ..
Note that, in FIG. 3, constituent elements necessary for explaining the characteristic portion of the light emitting pixel are illustrated, and other constituent elements are not illustrated. The two-dot chain line in FIG. 3 indicates the contour of the light emitting pixel 20.

As shown in FIG. 1, an organic EL device 100 according to the present embodiment includes an element substrate 10 as a substrate, a plurality of light emitting pixels 20B, 20G, 20R arranged in a matrix in a display region E of the element substrate 10, and a plurality of light emitting pixels 20B, 20G, 20R. A data line driving circuit 101 and a scanning line driving circuit 102, which are peripheral circuits for driving and controlling the light emitting pixels 20B, 20G, and 20R, an external connection terminal 103 for electrically connecting with an external circuit, and the like are provided.

A plurality of external connection terminals 103 are arranged along the first side of the element substrate 10. A data line driving circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. A scanning line driving circuit 104 is provided between the display region E and the other second and third sides that are orthogonal to the first side and face each other.
Hereinafter, the direction along the first side will be described as the X direction, and the direction along the other two sides (the second side and the third side) orthogonal to the first side and facing each other will be described as the Y direction.
The X direction is an example of the "first direction" in the present invention, and the Y direction is an example of the "second direction" in the present invention.

The organic EL device 100 includes a light emitting pixel 20B that emits blue (B) light, a light emitting pixel 20G that obtains green (G) light emission, and a light emitting pixel 20R that obtains red (R) light emission. ing. In the organic EL device 100, the light emitting pixels 20B, the light emitting pixels 20G, and the light emitting pixels 20R arranged in the X direction serve as a display unit P, and a full-color display is provided.

Further, the light emitting pixel 20B has a pixel electrode 31B, the light emitting pixel 20G has a pixel electrode 31G, and the light emitting pixel 20R has a pixel electrode 31R. The light emitting pixel 20B (pixel electrode 31B), the light emitting pixel 20G (pixel electrode 31G), and the light emitting pixel 20R (pixel electrode 31G) are arranged side by side in the Y direction.
The pixel electrode 31B is an example of the "first pixel electrode" in the present invention, the pixel electrode 31G is an example of the "second pixel electrode" in the present invention, and the pixel electrode 31R is the "third" in the present invention. Of the pixel electrode of FIG.
In the following description, the light emitting pixels 20B, 20G, 20R and the pixel electrodes 31B, 31G, 31R may be referred to, and these may be collectively referred to as the light emitting pixel 20 and the pixel electrode 31.

In the Y direction, the light emitting pixels 20 that emit light of the same color are arranged. That is, the light emitting pixels 20B that can emit blue (B) light are arranged in the Y direction and have a rectangular shape (striped shape). The light-emitting pixel 20G that emits green (G) light is arranged in the Y direction and has a rectangular shape (striped shape). The light-emitting pixel 20R capable of emitting red (R) light is arranged in the Y direction and has a rectangular shape (striped shape).
In the X direction, light emitting pixels 20 that emit light of different colors are repeatedly arranged in the order of B, G, and R. Note that the arrangement of the light emitting pixels 20 in the X direction does not have to be in the order of B, G, and R, and may be in the order of R, G, and B, for example.

The translucent first insulating layer 28 is provided on substantially the entire surface of the element substrate 10 except the region where the external connection terminals 103 are formed.
The translucent first insulating layer 28 includes a first region 28B in which the light emitting pixel 20B (pixel electrode 31B) is arranged and a second region 28G in which the light emitting pixel 20G (pixel electrode 31G) is arranged. It has a third region 28R in which the light emitting pixel 20R (pixel electrode 31R) is arranged, and the layer thickness (film thickness) of the first insulating layer 28 is different in each region. Although the details will be described later, the film thickness of the first insulating layer 28 in the second region 28G is larger than the film thickness of the first insulating layer 28 in the first region 28B. The film thickness of the first insulating layer 28 in the third region 28R is larger than the film thickness of the first insulating layer 28 in the second region 28G. That is, the film thickness of the first insulating layer 28 increases in the order of the first region 28B, the second region 28G, and the third region 28R.
The second region 28G is an example of the "first flat portion" in the present invention. The third region 28R is an example of the "second flat portion" in the present invention.

The first region 28B, the second region 28G, and the third region 28R have a rectangular shape (stripe shape) extending in the Y direction.
In the display area E, the X-direction dimension of the first area 28B, the second area 28G, and the third area 28R is substantially the same as the X-direction dimension of the light emitting pixel 20, that is, the repeating pitch of the light emitting pixel 20 in the X direction. Is almost the same as.

In the Y direction, the first area 28B, the second area 28G, and the third area 28R are wider than the display area E. That is, the Y-direction dimensions of the first region 28B, the second region 28G, and the third region are larger than the Y-direction dimension of the display region E. The Y-direction dimensions of the first region 28B, the second region 28G, and the third region 28R are the same as the Y-direction dimension of the display region E, that is, the size of the region in which the light-emitting pixels 20 are arranged. Good.

The first insulating layer 28 is also provided around the display region E (regions other than the first region 28B, the second region 28G, and the third region 28R). In the present embodiment, the film thickness of the first insulating layer 28 provided around the display region E is the same as the film thickness of the first insulating layer 28 in the third region 28R. Note that the thickness of the first insulating layer 28 provided around the display region E is the thickness of the first insulating layer 28 in the first region 28B or the first insulating layer in the second region 28G. It may be the same as the film thickness of 28. Further, the first insulating layer 28 provided around the display region E has a film thickness different from that of the first insulating layer 28 in the first region 28B, the second region 28G, and the third region 28R. You may have.

The first region 28B is an example of the "portion having the first layer thickness" in the present invention, and the second region 28G is an example of the "portion having the second layer thickness" in the present invention. The region 28R is an example of the "third layer thickness portion" in the present invention.

As shown in FIG. 2, the element substrate 10 is provided with scanning lines 11, data lines 12, lighting control lines 13, and power supply lines 14 as signal lines corresponding to the light emitting pixels 20. The scanning line 11 and the lighting control line 13 extend in parallel in the X direction and are connected to the scanning line driving circuit 102 (FIG. 1). The data line 12 and the power supply line 14 extend in parallel in the Y direction. The data line 12 is connected to the data line drive circuit 101 (FIG. 1). The power supply line 14 is connected to any of the plurality of external connection terminals 103 arranged.

Near the intersection of the scanning line 11 and the data line 12, the first transistor 21, the second transistor 22, the third transistor 23, the storage capacitor 24, and the organic EL element 30 which form the pixel circuit of the light emitting pixel 20 are formed. And are provided.

The organic EL element 30 has a pixel electrode 31 as an anode, a counter electrode 33 as a cathode, and a light emitting functional layer 32 including a light emitting layer sandwiched between these electrodes. The counter electrode 33 is a common electrode provided across the plurality of light emitting pixels 20. The counter electrode 33 is supplied with, for example, a reference potential Vss or a GND potential that is low with respect to the power supply voltage Vdd supplied to the power supply line 14.

The first transistor 21 and the third transistor 23 are, for example, n-channel type transistors. The second transistor 22 is, for example, a p-channel type transistor.

The gate electrode of the first transistor 21 is connected to the scanning line 11, one current end thereof is connected to the data line 12, and the other current end thereof is connected to the gate electrode of the second transistor 22 and one electrode of the storage capacitor 24. It is connected.
One current end of the second transistor 22 is connected to the power supply line 14 and the other electrode of the storage capacitor 24. The other current end of the second transistor 22 is connected to one current end of the third transistor 23. In other words, the second transistor 22 and the third transistor 23 share one current end of the pair of current ends.
The gate electrode of the third transistor 23 is connected to the lighting control line 13, and the other current end is connected to the pixel electrode 31 of the organic EL element 30.
One of the pair of current ends in each of the first transistor 21, the second transistor 22, and the third transistor 23 is a source and the other is a drain.
The third transistor 23 is an example of the “transistor” in the present invention.

In such a pixel circuit, when the voltage level of the scanning signal Yi supplied from the scanning line driving circuit 102 to the scanning line 11 becomes Hi level, the first n-channel transistor 21 is turned on (ON). The data line 12 and the storage capacitor 24 are electrically connected to each other via the first transistor 21 in the ON state (ON). Then, when the data signal is supplied from the data line driving circuit 101 to the data line 12, the potential difference between the voltage level Vdata of the data signal and the power supply voltage Vdd applied to the power supply line 14 is stored in the storage capacitor 24.

When the voltage level of the scanning signal Yi supplied from the scanning line driving circuit 102 to the scanning line 11 becomes Low level, the first n-channel transistor 21 is turned off (OFF), and the gate-source of the second transistor 22 is The voltage Vgs is held at the voltage when the voltage level Vdata is applied. Further, after the scanning signal Yi becomes Low level, the voltage level of the lighting control signal Vgi supplied to the lighting control line 13 becomes Hi level, and the third transistor 23 is turned on (ON). Then, the gate-source voltage Vgs of the second transistor 22, that is, a current corresponding to the voltage held in the storage capacitor 24, passes through the second transistor 22 and the third transistor 23 from the power supply line 14 and the organic EL element 30. Is supplied to.

The organic EL element 30 emits light according to the magnitude of the current flowing through the organic EL element 30. The current flowing through the organic EL element 30 changes depending on the voltage held in the storage capacitor 24 (the potential difference between the voltage level Vdata of the data line 12 and the power supply voltage Vdd) and the length of the period during which the third transistor 23 is in the ON state. However, the emission brightness of the organic EL element 30 is defined. That is, the value of the voltage level Vdata in the data signal makes it possible to give the luminance gradation according to the image information in the light emitting pixel 20.

Note that, in the present embodiment, the pixel circuit of the light emitting pixel 20 is not limited to having three transistors 21, 22, and 23, and has, for example, a configuration including a switching transistor and a driving transistor (a configuration including two transistors). ). Further, a transistor included in the pixel circuit may be an n-channel transistor or a p-channel transistor, or may include both an n-channel transistor and a p-channel transistor. In addition, the transistor that constitutes the pixel circuit of the light emitting pixel 20 may be a MOS transistor having an active layer on a semiconductor substrate, a thin film transistor, or a field effect transistor.
The arrangement of the lighting control line 13, which is a signal line other than the scanning line 11 and the data line 12, and the power supply line 14 depends on the arrangement of the transistors and the storage capacitors 24, and is not limited to this.
In this embodiment, a MOS transistor having an active layer on a semiconductor substrate is used as a transistor forming a pixel circuit of the light emitting pixel 20.

"Characteristics of light emitting pixels"
Next, with reference to FIG. 3, an outline of the characteristic portion of the light emitting pixel 20 will be described.
As shown in FIG. 3, the light emitting pixel 20 has a relay electrode 106, a pixel electrode 31, and a second insulating layer 29. In the light emitting pixel 20, the relay electrode 106, the pixel electrode 31, and the second insulating layer 29 are sequentially stacked (see FIGS. 5 and 6 ). The second insulating layer 29 has openings 29B, 29G, and 29R that expose a part of the pixel electrode 31. The light emitting pixel 20B capable of emitting blue (B) light has a pixel electrode 31B, a relay electrode 106B, and an opening 29B. The light emitting pixel 20G that can obtain green (G) light emission has a pixel electrode 31G, a relay electrode 106G, and an opening 29G. The light emitting pixel 20R capable of obtaining red (R) light emission has a pixel electrode 31R, a relay electrode 106R, and an opening 29R.
In the following description, it may be referred to as relay electrodes 106B, 106G, and 106R, or may be collectively referred to as relay electrode 106.
The relay electrode 106 is an example of the “conductive layer” in the present invention. The relay electrode 106B is an example of the "first conductive layer" in the present invention, the relay electrode 106G is an example of the "second conductive layer" in the present invention, and the relay electrode 106R is the "third conductive layer" in the present invention. It is an example of a "layer".

Each of the light emitting pixels 20B, 20G, and 20R has a rectangular shape in a plan view, and the longitudinal direction is arranged along the Y direction. Similarly, the pixel electrodes 31B, 31G, 31R also have a rectangular shape in a plan view, and the longitudinal direction is arranged along the Y direction.

As shown in the figure, the relay electrode 106 is arranged along one short side of the rectangular light emitting pixel 20, and is provided so that at least a part thereof overlaps with the pixel electrode 31 in a plan view. Although the details will be described later, the relay electrode 106 is a part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23. In other words, the pixel electrode 31 is connected to the third transistor 23 via the relay electrode 106. That is, the region where the relay electrode 106 is provided becomes the contact region.

The second insulating layer 29 covers the peripheral portion of the pixel electrode 31 and has a role of electrically insulating adjacent pixel electrodes 31 from each other. As described above, the second insulating layer 29 has the openings 29B, 29G, and 29R that expose a part of the pixel electrode 31. The pixel electrode 31 of the portion exposed by the second insulating layer 29, that is, the pixel electrode 31 exposed by the openings 29B, 29G, and 29R is in contact with the light emitting functional layer 32, supplies current to the light emitting functional layer 32, and emits light. Light the layer 32. Therefore, the openings 29B, 29G, and 29R provided in the second insulating layer 29 serve as the light emitting regions of the light emitting pixels 20B, 20G, and 20R. Thus, the second insulating layer 29 also has a role of defining the light emitting region of the light emitting pixel 20.
In the present invention, the pixel electrode 31 is in contact with the light emitting functional layer 32 in the light emitting region (openings 29B, 29G, 29R), and serves as an electrode of the organic EL element 30. Has at least a conductive portion that functions as a conductive layer that connects the electrode portion and the relay electrode 106.

As will be described in detail later, the luminescent pixel 20 of the present embodiment can reduce the distance DY between the luminescent area (openings 29B, 29G, 29R) and the contact area (relay electrodes 106B, 106G, 106R). have. That is, the light emitting region (openings 29B, 29G, 29R) can be widened to increase the luminous intensity of the light emitted from the light emitting functional layer 32. This is a characteristic part of the light emitting pixel 20.

"Cross-sectional structure of light-emitting pixel"
Next, the cross-sectional structure of the light emitting pixel 20 will be described with reference to FIGS. 4 to 8.
FIG. 4 is a schematic cross-sectional view taken along the line AA′ of FIG. 3, that is, a schematic cross-sectional view of a region in which an opening of the second insulating layer that defines a light emitting region is provided. FIG. 5 is a schematic cross-sectional view taken along the line BB′ of FIG. 3, that is, a schematic cross-sectional view of a region where the pixel electrode and the third transistor are electrically connected. FIG. 6 is a schematic cross-sectional view taken along the line CC′ of FIG. 3, that is, a schematic cross-sectional view of a light-emitting pixel that emits red (R) light. FIG. 7 is a schematic cross-sectional view taken along the line DD′ of FIG. 3, that is, a schematic cross-sectional view of a light-emitting pixel that emits green (G) light. FIG. 8 is a schematic cross-sectional view taken along the line EE′ of FIG. 3, that is, a schematic cross-sectional view of a light-emitting pixel that emits blue (B) light.

Note that FIG. 4 illustrates the first transistor 21 and the second transistor 22, wirings related to the first transistor 21 and the second transistor 22 in the pixel circuit, and the third transistor 23 is not shown. .. FIG. 5 shows the third transistor 23 and wirings related to the third transistor 23 in the pixel circuit, and the first transistor 21 and the second transistor are not shown. 6 to 8, the second transistor 22 and the third transistor 23, the wirings related to the second transistor 22 and the third transistor 23, and the like are shown, and the first transistor 21 is not shown.

First, with reference to FIG. 4, a cross-sectional structure of a region of the second insulating layer 29 defining the light emitting region, in which the openings 29B, 29G, and 29R are provided, will be described.
As shown in FIG. 4, the organic EL device 100 includes an element substrate 10, a sealing substrate 70, a resin layer 71 sandwiched between the element substrate 10 and the sealing substrate 70, and the like.

The sealing substrate 70 is a translucent insulating substrate, and a quartz substrate, a glass substrate, or the like can be used. The sealing substrate 70 has a role of protecting the organic EL element 30 arranged in the display area E from being damaged, and is provided wider than the display area E. The resin layer 71 has a role of adhering the element substrate 10 and the sealing substrate 70, and for example, an epoxy resin or an acrylic resin can be used.

The element substrate 10 includes a pixel circuit (first transistor 21, second transistor 22, third transistor 23, storage capacitor 24, organic EL element 30), a sealing layer 40, a color filter 50, and the like.

The light emitted from the light emitting pixel 20 passes through the color filter 50 and is emitted from the sealing substrate 70 side. That is, the organic EL device 100 has a top emission structure.
Since the organic EL device 100 has a top emission structure, not only a transparent quartz substrate or a glass substrate but also an opaque ceramic substrate or a semiconductor substrate can be used as the base material 10s of the element substrate 10. In this embodiment, a semiconductor substrate, for example, a silicon substrate is used as the base material 10s.

Into the base material 10s, a well portion 10w formed by implanting ions into the semiconductor substrate, and an ion implantation that is an active layer formed by implanting ions of a different type from the well portion 10w into the well portion 10w. And a part 10d. The well portion 10w functions as a channel of the transistors 21, 22, 23 in the light emitting pixel 20. The ion implantation unit 10 d functions as the source/drain of the transistors 21, 22, 23 and a part of the wiring in the light emitting pixel 20.

An insulating film 10a is provided so as to cover the surface of the base material 10s on which the ion implantation portion 10d and the well portion 10w are formed. The insulating film 10a functions as a gate insulating film of the transistors 21, 22, 23. A gate electrode 22g made of a conductive film such as polysilicon is provided on the insulating film 10a. The gate electrode 22g is arranged so as to face the well portion 10w that functions as a channel of the second transistor 22. The other first transistor 21 and the third transistor 23 are also provided with gate electrodes in the same manner.

The first interlayer insulating film 15 is provided so as to cover the gate electrode 22g. The first interlayer insulating film 15 is provided with, for example, a contact hole reaching the drain of the first transistor 21 and the gate electrode 22g of the second transistor 22. A conductive film is formed to cover at least the inside of the contact hole and cover the surface of the first interlayer insulating film 15. By patterning the conductive film, for example, the drain electrode 21d of the first transistor 21 and the gate electrode of the second transistor 22 are formed. Wiring connected to 22g is provided.

Next, the second interlayer insulating film 16 is provided so as to cover the first interlayer insulating film 15 and the wiring on the first interlayer insulating film 15. The second interlayer insulating film 16 is provided with a contact hole reaching the wiring provided on the first interlayer insulating film 15. A conductive film that covers at least the inside of the contact hole and covers the surface of the second interlayer insulating film 16 is formed, and by patterning the conductive film, for example, one electrode 24a of the storage capacitor 24 and the gate electrode of the second transistor 22 are formed. A contact portion is provided for electrically connecting to 22g. Further, the data line 12 is provided in the same layer as the one electrode 24a of the storage capacitor 24. The data line 12 is connected to the source of the first transistor 21 by a relay electrode (wiring) not shown in FIG.

Although not shown, a dielectric layer that covers at least one electrode 24a of the storage capacitor 24 is provided. The other electrode 24b of the storage capacitor 24 is provided so as to face the one electrode 24a of the storage capacitor 24 with the dielectric layer interposed therebetween. As a result, the storage capacitor 24 is formed by the pair of electrodes 24a and 24b and the dielectric layer.

A third interlayer insulating film 17 is provided so as to cover the storage capacitor 24. The third interlayer insulating film 17 is provided with, for example, a contact hole reaching the other electrode 24b of the storage capacitor 24 and a wiring formed on the second interlayer insulating film 16. A conductive film that covers at least the inside of the contact hole and covers the surface of the third interlayer insulating film 17 is formed, and the power supply line 14 and the relay electrode 14c (see FIG. 5) are provided by patterning the conductive film. There is. In this embodiment, the power supply line 14 and the relay electrode 14c are made of a conductive material having both light reflectivity and conductivity, such as aluminum or aluminum alloy. The film thickness of the power supply line 14 and the relay electrode 14c is approximately 100 nm.

The power supply line 14 is provided on almost the entire surface of the display area E, and has an opening in each of the light emitting pixels 20B, 20G, and 20R. A relay electrode 14c is provided in the opening of the power supply line 14. The power supply line 14 is arranged above the transistors 21, 22, and 23 so as to face the pixel electrode 31. The light emitted from the light emitting regions (openings 29B, 29G, 29R) is reflected by the power supply line 14.
The power supply line 14 is an example of the "light reflecting layer" in the present invention.
The light reflection layer that reflects the light emitted from the light emitting regions (openings 29B, 29G, and 29R) may be provided in an island shape for each pixel electrode 31.

A first insulating film 25, a second insulating film 26, and a third insulating film 27 are sequentially stacked on the power line 14. The first insulating film 25, the second insulating film 26, and the third insulating film 27 are made of a light-transmitting insulating material. In this embodiment, the first insulating film 25 is made of silicon nitride, and the second insulating film 26 and the third insulating film 27 are made of silicon oxide. The thickness of the first insulating film 25 is approximately 50 nm. The film thickness of the second insulating film 26 and the third insulating film 27 is approximately 60 nm to 70 nm.

The first insulating film 25 is provided on the light emitting pixel 20B that emits blue (B) light, the light emitting pixel 20G that obtains green (G) light emission, and the light emitting pixel 20R that obtains red (R) light emission. Has been. The second insulating film 26 is provided in the light emitting pixel 20G that emits green (G) light and the light emitting pixel 20R that obtains red (R) light emission. The third insulating film 27 is provided in the light emitting pixel 20R that can emit red (R) light.

The first insulating layer 28 is composed of a first insulating film 25, a second insulating film 26, and a third insulating film 27.
Specifically, the first insulating layer 28 of the light emitting pixel 20B capable of emitting blue (B) light is composed of the first insulating film 25 and has a film thickness Bd1. Then, in the light emitting pixel 20B, the first insulating layer 28 having the film thickness Bd1 is provided from the opening 29B (light emitting region) to the contact region except for the contact region connecting the relay electrode 106B and the pixel electrode 31B. Has been. The first insulating layer 28 having the film thickness Bd1 is provided across the plurality of light emitting pixels 20B arranged in the Y direction. In other words, the first region 28B is provided with a plurality of openings 29B (light emitting regions) arranged in the Y direction. Further, a contact region that connects the relay electrode 106B and the pixel electrode 31B is provided in the first region 28B. As shown in FIG. 5, in the contact region, the pixel electrode 31B is in direct contact with the relay electrode 106B.

The first insulating layer 28 of the light emitting pixel 20G capable of emitting green (G) light is composed of the first insulating film 25 and the second insulating film 26 and has a film thickness Gd1. Then, in the light emitting pixel 20G, the first insulating layer 28 having the film thickness Gd1 is provided from the opening 29G (light emitting region) to the contact region except for the contact region connecting the relay electrode 106G and the pixel electrode 31G. Has been. The first insulating layer 28 having the film thickness Gd1 is provided across the plurality of light emitting pixels 20G arranged in the Y direction. In other words, the second region 28G is provided with a plurality of openings 29G (light emitting regions) arranged in the Y direction. Further, a contact region that connects the relay electrode 106G and the pixel electrode 31G is provided in the second region 28G. As shown in FIG. 5, in the contact region, the pixel electrode 31G is connected to the relay electrode 106G via the contact hole 28CT1.

The first insulating layer 28 of the light emitting pixel 20G that can obtain red (G) light emission is composed of the first insulating film 25, the second insulating film 26, and the third insulating film 27, and has a film thickness Rd1. There is. Then, in the light emitting pixel 20R, the first insulating layer 28 having the film thickness Rd1 is provided from the opening 29R (light emitting region) to the contact region except for the contact region connecting the relay electrode 106R and the pixel electrode 31R. Has been. The first insulating layer 28 having the film thickness Rd1 is provided across the plurality of light emitting pixels 20R arranged in the Y direction. In other words, the third region 28R is provided with a plurality of openings 29R (light emitting regions) arranged in the Y direction. A contact region that connects the relay electrode 106R and the pixel electrode 31R is provided in the third region 28R. As shown in FIG. 5, in the contact region, the pixel electrode 31R is connected to the relay electrode 106R via the contact hole 28CT2.

Therefore, the first insulating layer 28 (film thickness Bd1) of the light emitting pixel 20B, the first insulating layer 28 (film thickness Gd1) of the light emitting pixel 20G, and the first insulating layer 28 (film thickness Rd1) of the light emitting pixel 20R. It becomes thicker in order.

In other words, the first insulating layer 28 formed of the first insulating film 25, that is, the first insulating layer 28 in the region where the light emitting pixel 20B is arranged corresponds to the first region 28B. The first insulating layer 28 composed of the first insulating film 25 and the second insulating film 26, that is, the first insulating layer 28 in the region where the light emitting pixel 20G is arranged corresponds to the second region 28G. The first insulating layer 28 formed of the first insulating film 25, the second insulating film 26, and the third insulating film 27, that is, the first insulating layer 28 in the region where the light emitting pixel 20R is arranged is the third insulating layer 28. It corresponds to the region 28R.
The film thickness Bd1 is an example of the “first layer thickness” in the present invention. The film thickness Gd1 is an example of the “second layer thickness” in the present invention. The film thickness Rd1 is an example of the “third layer thickness” in the present invention.

The pixel electrode 31 is provided in an island shape on the first insulating layer 28, and faces the power supply line 14 with the first insulating layer 28 interposed therebetween. Specifically, the pixel electrode 31B is provided in an island shape on the first insulating layer 28 having a film thickness Bd1, and the pixel electrode 31G is provided in an island shape on the first insulating layer 28 having a film thickness Gd1. The electrode 31R is provided in an island shape on the first insulating layer 28 having a film thickness Bd1. The pixel electrode 31 has a light-transmitting property, is made of a light-transmitting material such as ITO (Indium Tin Oxide), and serves as an electrode for supplying holes to the light emitting functional layer 32. The film thickness of the pixel electrode 31 is approximately 100 nm.

The second insulating layer 29 is provided so as to cover the peripheral portion of the pixel electrode 31. The second insulating layer 29 is made of, for example, silicon oxide, and insulates each of the pixel electrodes 31R, 31G, and 31B. The film thickness of the second insulating layer 29 is approximately 60 nm. The second insulating layer 29 is provided with openings 29B, 29G and 29R. The area in which the openings 29B, 29G, and 29R are provided becomes the light emitting area of the light emitting pixel 20. The second insulating layer 29 may be formed using an organic material such as an acrylic photosensitive resin.
The light emitting functional layer 32, the counter electrode 33, and the sealing layer 40 are sequentially stacked so as to cover the pixel electrode 31 and the second insulating layer 29.

The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. The holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 are combined in the organic light emitting layer, and the light emitting functional layer 32 emits light (emits light). The film thickness of the light emitting functional layer 32 is approximately 110 nm.
The organic light emitting layer emits light having red, green, and blue light components. The organic light emitting layer may be composed of a single layer, or may be composed of a plurality of layers (for example, a blue light emitting layer which mainly emits blue light when a current flows, and a yellow light emitting layer which emits light including red and green when a current flows. Layers).

The counter electrode 33 is a common electrode for supplying electrons to the light emitting functional layer 32. The counter electrode 33 is provided so as to cover the light emitting functional layer 32, is made of, for example, an alloy of Mg and Ag, and has a light transmitting property and a light reflecting property. The film thickness of the counter electrode 33 is approximately 10 nm to 30 nm. By thinning the constituent material (such as an alloy of Mg and Ag) of the counter electrode 33, it is possible to impart a light transmissive function in addition to the light reflective function.

The sealing layer 40 is disposed on the counter electrode 33. The sealing layer 40 is a passivation film that suppresses deterioration of the light emitting functional layer 32 and the counter electrode 33, and suppresses intrusion of moisture and oxygen into the light emitting functional layer 32 and the counter electrode 33. The sealing layer 40 includes a first sealing layer 41, a buffer layer 42, and a second sealing layer 43, which are sequentially stacked from the counter electrode 33 side, covers the organic EL element 30 (display region E), It is provided on substantially the entire surface of the element substrate 10. The sealing layer 40 is provided with an opening (not shown) exposing the external connection terminal 103 terminal (see FIG. 1 ).

The first sealing layer 41 is made of, for example, a silicon oxynitride formed by using a well-known plasma CVD (Chemical Vapor Deposition) method or the like, and has a high barrier property against moisture and oxygen. The film thickness of the first sealing layer 41 is approximately 200 nm to 400 nm. As the material forming the first sealing layer 41, in addition to the above-described silicon oxynitride, silicon oxide, silicon nitride, and metal oxide such as titanium oxide can be used.

The buffer layer 42 is made of, for example, an epoxy resin or a coating type inorganic material (such as silicon oxide) having excellent thermal stability. The film thickness of the buffer layer 42 is larger than the film thickness of the first sealing layer 41, and is approximately 1000 nm to 5000 nm. The buffer layer 42 covers defects (pinholes, cracks), foreign matters, etc. of the first sealing layer 41, and the surface of the buffer layer 42 on the second sealing layer 43 side is flatter than the surface on the counter electrode 33 side. To form a smooth surface.

The second sealing layer 43 is made of, for example, silicon oxynitride formed by using a well-known plasma CVD method or the like. The film thickness of the second sealing layer 43 is approximately 300 nm to 700 nm. The second sealing layer 43 is made of the same material as the first sealing layer 41 and has a high barrier property against moisture and oxygen.

On the sealing layer 40, colored layers 50B, 50G, 50R corresponding to the light emitting pixels 20B, 20G, 20R are provided. In other words, the color filter 50 including the colored layers 50B, 50G, and 50R is provided on the sealing layer 40. Here, the color filter 50 is provided by being stacked on the sealing layer 40.

Next, with reference to FIG. 5, a sectional structure of a portion (contact portion) where the pixel electrode 31 and the third transistor 23 are electrically connected will be described.

As shown in FIG. 5, the base material 10s is provided with an ion implantation part 10d that functions as a source of the third transistor 23. The ion implantation portion 10d (base material 10s) is covered with the insulating film 10a and the first interlayer insulating film 15. The first interlayer insulating film 15 and the insulating film 10a are provided with contact holes reaching the ion implantation portion 10d of the third transistor 23. A conductive film that covers at least the inside of the contact hole and covers the surface of the first interlayer insulating film 15 is formed, and is patterned to be connected to the source electrode 23s of the third transistor 23 and the source electrode 23s. Wiring is provided.

The wiring connected to the first interlayer insulating film 15 and the source electrode 23s is covered with the second interlayer insulating film 16. The second interlayer insulating film 16 is provided with a contact hole reaching a wiring connected to the source electrode 23s. A conductive film that covers at least the inside of the contact hole and covers the surface of the second interlayer insulating film 16 is formed, and by patterning the conductive film, wiring is provided on the second interlayer insulating film 16. The second interlayer insulating film 16 is covered with the third interlayer insulating film 17. The third interlayer insulating film 17 is provided with a contact hole reaching the wiring provided on the second interlayer insulating film 16. A conductive film that covers at least the inside of the contact hole and covers the surface of the third interlayer insulating film 17 is formed. By patterning the conductive film, the power supply line 14 and the relay electrode 14c are formed on the third interlayer insulating film 17. It is provided.

As described above, the power supply line 14 is provided on substantially the entire surface of the display area E and has openings in each of the light emitting pixels 20B, 20G, and 20R. The relay electrode 14c is provided in the opening of the power supply line 14 in an island shape for each of the light emitting pixels 20B, 20G, and 20R. In addition, the relay electrode 14c forms a part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23.

A first insulating film 25 is provided so as to cover the power supply line 14 and the relay electrode 14c. A contact hole 61CT that exposes a part of the relay electrode 14c is provided in the first insulating film 25. A conductive film that covers at least the inside of the contact hole 61CT and covers the surface of the first insulating film 25 is formed, and by patterning the conductive film, the relay electrode 106 is provided on the first insulating film 25. The relay electrode 106 is connected to the relay electrode 14c via the contact hole 61CT. The relay electrode 106 forms part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23.

The relay electrode 106 is made of a light-shielding conductive material such as titanium nitride. The thickness of the relay electrode 106 is approximately 50 nm. The relay electrode 106 is provided in each of the light emitting pixels 20B, 20G, and 20R in an island shape so as to cover the opening of the power supply line 14 in a plan view. In other words, the relay electrode 106 is provided so that the light emitted from the light emitting functional layer 32 does not enter the transistors 21, 22, 23 through the opening of the power supply line 14. That is, the relay electrode 106 also has a role of blocking the incidence of light emitted from the light emitting functional layer 32 and suppressing malfunction of the transistors 21, 22, 23.

The pixel electrode 31 is provided so as to overlap the relay electrode 106 in a plan view. As described above, the light emitting pixel 20B is provided with the relay electrode 106B and the pixel electrode 31B, the light emitting pixel 20G is provided with the relay electrode 106G and the pixel electrode 31G, and the light emitting pixel 20R is provided with the relay electrode 106R and the pixel electrode. 31R are provided.

In the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B.

In the light emitting pixel 20G, the second insulating film 26 is provided between the relay electrode 106G and the pixel electrode 31G. The second insulating film 26 is provided with a contact hole 28CT1 that exposes a part of the relay electrode 106G. The pixel electrode 31B is connected to the relay electrode 106G via the contact hole 28CT1.

In the light emitting pixel 20R, a second insulating film 26 and a third insulating film 27 are provided (stacked) in order from the relay electrode 106R side between the relay electrode 106R and the pixel electrode 31R. The second insulating film 26 and the third insulating film 27 are provided with a contact hole 28CT2 that exposes a part of the relay electrode 106R. The pixel electrode 31R is connected to the relay electrode 106R via the contact hole 28CT2.
The contact hole 28CT1 is an example of the “first contact hole” in the present invention. The contact hole 28CT2 is an example of the “second contact hole” in the present invention.

In this way, the insulating film disposed between the relay electrode 14c and the relay electrode 106 is common (first insulating film 25) to each of the light emitting pixels 20B, 20G, and 20R. Further, the film thickness of the first insulating layer 28 arranged between the power supply line 14 and the pixel electrode 31 is different in each of the light emitting pixels 20B, 20G, 20R. Specifically, in the light emitting pixel 20B, the first insulating layer 28 having the film thickness Bd1 formed of the first insulating film 25 is disposed between the power supply line 14 and the pixel electrode 31. In the light emitting pixel 20G, a first insulating layer 28 having a film thickness Gd1 including a first insulating film 25 and a second insulating film 26 is arranged between the power supply line 14 and the pixel electrode 31. In the light-emitting pixel 20R, the first insulating layer 28 having a film thickness Rd1 formed of the first insulating film 25, the second insulating film 26, and the third insulating film 27 between the power supply line 14 and the pixel electrode 31. Are arranged.

Here, in this embodiment, the first insulating film 25 is made of silicon nitride, and the second insulating film 26 and the third insulating film 27 are made of silicon oxide. Then, when the insulating film arranged between the relay electrode 14c and the relay electrode 106 is made of silicon nitride, when the second insulating film 26 and the third insulating film 27 made of silicon oxide are processed, Since the etching selection ratio with respect to the 1 insulating film 25 can be secured, the processing accuracy can be improved and the relay electrode 14c and the pixel electrode 31 can be reliably connected.

In the first region 28B, the pixel electrode 31B is provided on the first insulating layer 28 (first insulating film 25) having the film thickness Bd1, and the pixel electrode 31B is in direct contact with the relay electrode 106B. In the second region 28G, the pixel electrode 31G is provided on the first insulating layer 28 (the first insulating film 25 and the second insulating film 26) having the film thickness Gd1, and the pixel electrode 31G is provided via the contact hole 28CT1. It is connected to the relay electrode 106G. In the third region 28R, the pixel electrode 31R is provided on the first insulating layer 28 (first insulating film 25, second insulating film 26, and third insulating film 27) having the film thickness Rd1, and the pixel electrode 31R is It is connected to the relay electrode 106R through the contact hole 28CT2.

The pixel electrode 31B provided in the first region 28B, the pixel electrode 31G provided in the second region 28G, and the pixel electrode 31R provided in the third region 28R are covered with the second insulating layer 29. ing. Further, on the second insulating layer 29, the light emitting function layer 32, the counter electrode 33, the sealing layer 40, and the color filter 50 are sequentially provided (laminated).

Next, with reference to FIGS. 6 to 8, a cross-sectional structure of the light emitting pixel 20 in the Y direction will be described.
As shown in FIGS. 6 to 8, the base member 10s is provided with a well portion 10w shared by the second transistor 22 and the third transistor 23. The well portion 10w is provided with three ion implantation portions 10d. The ion implantation part 10d located on the center side among the three ion implantation parts 10d functions as a drain 22d (23d) shared by the second transistor 22 and the third transistor 23. An insulating film 10a that covers the well portion 10w is provided. Then, on the insulating film 10a, gate electrodes 22g and 23g (gate electrode 22g of the second transistor 22 and gate electrode 23g of the third transistor 23) made of a conductive film such as polysilicon are provided. Each of the gate electrodes 22g and 23g is arranged so as to face a portion functioning as a channel in the well portion 10w between the ion implantation portion 10d on the center side and the ion implantation portion 10d on the end side.

Next, the gate electrode 22g of the second transistor 22 is connected to one of the storage capacitors 24 provided on the second interlayer insulating film 16 by a contact hole penetrating the first interlayer insulating film 15 and the second interlayer insulating film 16. Is connected to the electrode 24a. The source electrode 22s of the second transistor 22 is a power source provided on the third interlayer insulating film 17 by a contact hole penetrating the first interlayer insulating film 15, the second interlayer insulating film 16, and the third interlayer insulating film 17. It is connected to the line 14.

The gate electrode 23g of the third transistor 23 is connected to the lighting control line 13 provided on the first interlayer insulating film 15 by a contact hole penetrating the first interlayer insulating film 15. The scanning line 11 is provided on the first interlayer insulating film 15 in addition to the lighting control line 13. The scanning line 11 is connected to the gate of the first transistor 21 via a contact hole not shown in FIG.

The source electrode 23s of the third transistor 23 is a relay provided on the third interlayer insulating film 17 by a contact hole penetrating the first interlayer insulating film 15, the second interlayer insulating film 16 and the third interlayer insulating film 17. It is connected to the electrode 14c. The relay electrode 14c is covered with the first insulating film 25, and is connected to the relay electrode 106 provided on the first insulating film 25 via the contact hole 25CT.

In the light emitting pixel 20R, the pixel electrode 31R is connected to the relay electrode 106R through the contact hole 28CT2 provided in the second insulating film 26 and the third insulating film 27.
As shown in FIG. 6, the second insulating film 26 and the third insulating film 27 are provided in the light emitting pixel 20R except for the contact region where the pixel electrode 31R and the relay electrode 106R are connected via the contact hole 28CT2. .. The first insulating film 25 is provided in the light emitting pixel 20R except for the contact region where the relay electrode 106R and the relay electrode 14c are connected via the contact hole 25CT. The contact hole 28CT2, the relay electrode 106R, and the contact hole 25CT are examples of the "third connection portion" in the present invention. The third connection portion is provided in the third region 28R (third layer thickness portion). The third connection portion is surrounded by the first insulating film 25, the second insulating film 26, and the third insulating film 27. Then, in the third region 28R (third layer thickness portion), the openings 29R (light emitting regions) are arranged in the Y direction. The first insulating film 25, the second insulating film 26, and the third insulating film 27 are provided so as to fill the spaces between the third connecting portions. Therefore, there is no step due to the first insulating layer 28 between the opening 29R (light emitting area) and the contact area, and the light emitting area (opening 29R) and the contact area (relay electrode 106G) are different from those when there is a step. The distance DY between them can be reduced. In other words, the opening 29R (light emitting region) can be brought close to the contact region on the right side of FIG. Further, it is possible to bring the opening 29R (light emitting region) close to the contact region on the left side of FIG. Therefore, the opening 29R (light emitting region) can be enlarged.

In the light emitting pixel 20G, the pixel electrode 31G is connected to the relay electrode 106G via the contact hole 28CT1 provided in the second insulating film 26.
As shown in FIG. 7, the second insulating film 26 is provided in the light emitting pixel 20G except the contact region where the pixel electrode 31G and the relay electrode 106G are connected via the contact hole 28CT1. The first insulating film 25 is provided in the light emitting pixel 20G except for the region where the relay electrode 106G and the relay electrode 14c are connected via the contact hole 25CT. The contact hole 28CT1, the relay electrode 106G, and the contact hole 25CT are examples of the “second connecting portion” and the “fourth connecting portion” in the present invention. The second connecting portion and the fourth connecting portion are provided in the second region 28G (portion having the second layer thickness). The second connecting portion and the fourth connecting portion are surrounded by the first insulating film 25 and the second insulating film 26. The openings 29G (light emitting regions) are arranged in the Y direction in the second region 28G (portion having the second layer thickness). The first insulating film 25 and the second insulating film 26 are provided so as to fill the space between the second connecting portion and the fourth connecting portion. Therefore, there is no step due to the first insulating layer 28 between the opening 29G (light emitting area) and the contact area, and when there is a step between the light emitting area (opening 29G) and the contact area (relay electrode 106G). The distance DY can be reduced. In other words, the opening 29G (light emitting region) can be brought close to the contact region on the right side of FIG. Furthermore, the opening 29G (light emitting region) can be brought close to the contact region on the left side of FIG. Therefore, the opening 29G (light emitting region) can be enlarged.

In the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B.
As shown in FIG. 8, the first insulating film 25 is provided except for the contact region where the relay electrode 106B and the relay electrode 14c are connected via the contact hole 25CT. The contact hole 25CT and the relay electrode 106B are examples of the "first connecting portion" in the present invention. The first connecting portion is provided in the first region (portion having the first layer thickness). The second connection portion is surrounded by the first insulating film 25, the first insulating film 25, and the second insulating film 26. The openings 29B (light emitting regions) are arranged in the Y direction in the first region (portion having the first layer thickness). Further, the first insulating film 25 is provided so as to fill the space between the first connection portions. Therefore, there is no step due to the first insulating layer 28 between the opening 29B (light emitting area) and the contact area, and the light emitting area (opening 29B) and the contact area (relay electrode 106G) are different from those when there is a step. The distance DY between them can be reduced. In other words, the opening 29B (light emitting region) can be brought close to the contact region on the right side of FIG. Further, the opening 29R (light emitting region) can be brought close to the contact region on the left side of FIG. Therefore, the opening 29B (light emitting region) can be enlarged.
A second insulating layer 29, a light emitting functional layer 32, a counter electrode 33, a sealing layer 40, and a color filter 50 are sequentially stacked on the pixel electrode 31.

"Optical resonance structure"
In the light emitting region (openings 29B, 29G, 29R), the power supply line 14 having light reflectivity, the first insulating layer 28, the pixel electrode 31, the light emitting functional layer 32, and the light reflectivity and light transmitting property. And a counter electrode 33 having With this configuration, the light emitted from the light emitting functional layer 32 is reciprocated (reflected) between the power supply line 14 and the counter electrode 33 to resonate the light of a specific wavelength. As a result, the light of the specific wavelength is intensified as compared with other wavelength regions and is emitted from the organic EL element 30. Further, the light having the specific wavelength is emitted as display light from the power source line 14 toward the counter electrode 33, that is, from the sealing substrate 70. As described above, the organic EL device 100 has the optical resonance structure including the power line 14, the first insulating layer 28, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33, and emits light of a specific wavelength. It has a configuration that selectively enhances the color purity of the light emitted from the light emitting pixel 20.
The outline of the optical resonance structure will be described below.

The first insulating layer 28 has a role of adjusting the optical path length (optical distance) between the power supply line 14 and the counter electrode 33, and the resonance wavelength varies depending on the film thickness of the first insulating layer 28. It is changing. Specifically, the optical distance from the power line 14 to the counter electrode 33 is D, the phase shift in reflection on the reflective layer is φL, the phase shift in reflection on the counter electrode 33 is φU, and the peak wavelength of the standing wave is λ. , Where m is an integer, the optical distance D satisfies the following formula (1).
D={(2πm+φL+φU)/4π}λ (1)

The optical distance D in the optical resonance structure of the light emitting pixels 20B, 20G, and 20R increases in the order of B, G, and R, and the optical distance D of the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31 is increased. It is adjusted by changing the film thickness.

As shown in FIG. 6, in the light emitting pixel 20R, the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31R includes the first insulating film 25, the second insulating film 26, and the third insulating film. 27 and has a film thickness Rd1. As shown in FIG. 7, in the light emitting pixel 20G, the first insulating layer 28 arranged between the power supply line 14 and the pixel electrode 31G is composed of a first insulating film 25 and a second insulating film 26. It has a film thickness Gd1. As shown in FIG. 8, in the light emitting pixel 20B, the first insulating layer 28 arranged between the power supply line 14 and the pixel electrode 31B is composed of the first insulating film 25 and has a film thickness Bd1. There is. Therefore, the film thickness of the first insulating layer 28 increases in the order of light emitting pixel 20B (film thickness Bd1)<light emitting pixel 20G (film thickness Gd1)<light emitting pixel 20R (film thickness Rd1). Therefore, the optical distance D also increases in the order of light emitting pixel 20B<light emitting pixel 20G<light emitting pixel 20R.

Specifically, in the light emitting pixel 20R, the optical distance D is set so that the resonance wavelength (the peak wavelength at which the brightness becomes maximum) is 610 nm. Similarly, in the light emitting pixel 20G, the optical distance D is set so that the resonance wavelength (the peak wavelength at which the brightness becomes maximum) is 540 nm. In the light emitting pixel 20B, the optical distance D is set so that the resonance wavelength (the peak wavelength at which the brightness becomes maximum) is 470 nm.

In order to realize the above peak wavelength, the film thickness of the pixel electrodes 31B, 31G, 31R made of a transparent conductive film such as ITO is set to about 100 nm, and the film thickness of the light emitting functional layer 32 is set to about 110 nm. =1 and the thickness of the first insulating layer 28 between the reflective layer and the counter electrode 33 is calculated to be 170 nm for the light emitting pixel 20R, 115 nm for the light emitting pixel 20G, and 50 nm for the light emitting pixel 20B. That is, the film thickness Rd1 of the first insulating layer 28 in the light emitting pixel 20R (third region 28R) is approximately 170 nm, and the film thickness Gd1 of the first insulating layer 28 in the light emitting pixel 20G (second region 28G) is roughly. The thickness Bd1 of the first insulating layer 28 in the light emitting pixel 20B (first region 28B) is 115 nm, and is approximately 50 nm. The film thicknesses of the first insulating film 25, the second insulating film 26, and the third insulating film 27 are adjusted so that such a first insulating layer 28 is formed.

As a result, the light emitting pixel 20R emits red (R) light having a peak wavelength of 610 nm, the light emitting pixel 20G emits green (G) light having a peak wavelength of 540 nm, and the light emitting pixel 20B peaks at 470 nm. A blue (B) light having a wavelength is emitted.
As described above, in the organic EL device 100 according to the present embodiment, it is possible to enhance the color purity of the light emitted from the light emitting pixel 20 by the above-described optical resonance structure and provide a vivid display.

As shown in FIG. 6, in the light emitting pixel 20R, the region where the opening 29R is provided becomes the light emitting region, and the region where the relay electrode 106R is provided becomes the contact region. The pixel electrode 31R is arranged across the light emitting region and the contact region. Since the thickness of the first insulating layer 28 in the region where the pixel electrode 31R is arranged is Rd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29R) is widened and the distance DY between the light emitting region (opening 29R) and the contact region (relay electrode 106R) is small, the optical distance D in the light emitting region is constant. Yes, red (R) light having a peak wavelength of 610 nm is emitted. That is, it is possible to maintain the peak wavelength of the light emitted from the light emitting region and increase the luminous intensity of the red (R) light.

As shown in FIG. 7, in the light emitting pixel 20G, the region where the opening 29G is provided becomes the light emitting region, and the region where the relay electrode 106G is provided becomes the contact region. The pixel electrode 31G is arranged across the light emitting region and the contact region. Since the film thickness of the first insulating layer 28 in the region where the pixel electrode 31G is arranged is Gd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29G) is widened and the distance DY between the light emitting region (opening 29R) and the contact region (relay electrode 106G) is small, the optical distance D in the light emitting region is constant. Yes, green (G) light having a peak wavelength of 540 nm is emitted. That is, it is possible to maintain the peak wavelength of the light emitted from the light emitting region and increase the luminous intensity of the green (G) light.

As shown in FIG. 8, in the light emitting pixel 20B, the region where the opening 29B is provided becomes the light emitting region, and the region where the relay electrode 106B is provided becomes the contact region. The pixel electrode 31B is arranged across the light emitting region and the contact region. Since the film thickness of the first insulating layer 28 in the region where the pixel electrode 31B is arranged is Bd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29B) is widened and the distance DY between the light emitting region (opening 29B) and the contact region (relay electrode 106B) is small, the optical distance D in the light emitting region is constant. Yes, blue (B) light having a peak wavelength of 470 nm is emitted. That is, the peak wavelength of the light emitted from the light emitting region can be maintained and the luminous intensity of the blue (B) light can be increased.

For example, in the known technology (Japanese Patent Laid-Open No. 2009-134067), the optical distance in the light emitting region and the optical distance in the contact region are different, and the optical distance between the light emitting region and the contact region is different. Has boundaries. If the light emitting region is widened beyond the boundary, portions having different optical distances are generated in the light emitting region, light having different peak wavelengths is emitted from the light emitting region, and the color purity of light emitted from the light emitting region deteriorates. Therefore, it is difficult for the known technique to widen the light emitting region beyond the boundary.

In this embodiment, since the optical distance D between the light emitting region and the contact region is constant, the light emitting region can be widened and the luminous intensity of the light emitted from the light emitting region can be increased as compared with the known technique.
As described above, the organic EL device 100 according to the present embodiment can provide a bright and vivid display.

The light emitting region (openings 29B, 29G, 29R) can be widened within a range where the light emission of the light emitting functional layer 32 is not adversely affected. For example, if there is no adverse effect on the light emission of the light emitting functional layer 32, the light emitting region (openings 29B, 29G, 29R) may be expanded so as to overlap at least a part of the contact region (relay electrodes 106B, 106G, 106R). Good.

"Method for manufacturing organic EL device"
Next, a method for manufacturing the organic EL device 100 will be described with reference to FIGS. FIG. 9 is a process flow showing a method for manufacturing an organic EL device. 10 and 11 are schematic cross-sectional views corresponding to FIG. 5 and showing the state of the organic EL device after each step shown in FIG. 9. Note that, in FIGS. 10 and 11, the pixel circuits and wirings provided in a layer lower than the power supply line 14 on the element substrate 10 are not shown.

As shown in FIG. 9, the steps of manufacturing the organic EL device 100 include a step of forming the power supply line 14 as a light reflection layer (step S1), a step of forming the first insulating film 25 (step S2), and Step of forming the relay electrode 106 (step S3), step of forming the second insulating film 26 (step S4), step of etching the second insulating film 26 (step S5), and formation of the third insulating film 27. The step (step S6), the step of etching the third insulating film 27 (step S7), and the step of forming the pixel electrode 31 (step S8) are included.

In step S1, as shown in FIG. 10(a), for example, aluminum or an aluminum alloy is deposited to a film thickness of about 100 nm by a sputtering method, and this is patterned to form a power line 14 as a light reflection layer and a relay. The electrode 14c is formed. As described above, the power supply line 14 is formed on substantially the entire surface of the display region E, and serves as a current supply source for causing the light emitting functional layer 32 to emit light and a light reflecting layer for reflecting light emitted from the light emitting functional layer 32. The power supply line 14 has an opening in the light emitting pixel 20, and the relay electrode 14c is provided in the opening. That is, the power supply line 14 is provided across the plurality of light emitting pixels 20, and the relay electrode 14c is provided in each of the plurality of light emitting pixels 20 in an island shape.

In step S2, as shown in FIG. 10B, a silicon nitride film having a film thickness of approximately 50 nm is formed by, for example, a plasma CVD method and patterned to form a contact hole 25CT for exposing a part of the relay electrode 14c. Forming a first insulating film 25 having

In step S3, as shown in FIG. 10C, a titanium nitride film having a thickness of about 50 nm is formed by, for example, a sputtering method, and the film is patterned to form the relay electrode 106. The relay electrode 106 is formed so as to cover the opening of the power supply line 14 in plan view, and is connected to the relay electrode 14c via the contact hole 25CT.

In step S4, for example, a silicon oxide film is formed to a film thickness of approximately 60 nm to 70 nm by a plasma CVD method, and as shown in FIG. 10D, the second insulating film 26 that covers the first insulating film 25 and the relay electrode 106 is formed. Form.

Subsequently, in step S5, as shown in FIG. 11A, a part of the second insulating film 26 is removed by etching, for example, by a dry etching method using a fluorine-based gas to form an opening C1.
That is, in the first region 28B and the second region 28G corresponding to the opening C1, the second insulating film 26 is not provided, and in the third region 28R where the opening C1 is not formed, the second insulating film is formed. 26 is provided. Here, the contact hole 28CT2 that exposes a part of the relay electrode 106R in the third region 28R is formed.

Here, since the first insulating film 25 is made of silicon nitride and the second insulating film 26 is made of silicon oxide, the selection ratio at the time of etching is between the first insulating film 25 and the second insulating film 26. There is. In the regions corresponding to the light emitting regions of the first region 28B and the second region 28G, the etching rate becomes slow when the first insulating film 25 is exposed, and ideally the etching stops. Further, in the contact region of the third region 28R, the contact hole 28CT2 is formed, and when the surface of the relay electrode 106R is exposed, the etching rate slows down, and ideally the etching stops. Similarly, in the contact regions of the first region 28B and the second region 28G, the surface of the relay electrode 106B and the surface of the relay electrode 106G are exposed, and the first insulating film 25 is exposed in the periphery thereof, the etching rate becomes slow, Ideally, etching stops.

Subsequently, in step S6, as shown in FIG. 11B, a third insulating film 27 is formed by depositing silicon oxide with a film thickness of approximately 60 nm to 70 nm by, for example, a plasma CVD method. Here, the third insulating film 27 is stacked on the first insulating film 25 in the regions corresponding to the light emitting regions of the first region 28B and the second region 28G, and the first region 28B and the second region are stacked. In the 28G contact region, the relay electrode 106B and the relay electrode 106G are stacked on the surfaces thereof. In addition, the region corresponding to the light emitting region of the third region 28R is stacked on the second insulating film 26, and the contact region of the third region 28R is stacked on the relay electrode 106R and the second insulating film 26. .. That is, the third insulating film 27 is formed in the contact hole 28CT2 provided in the second insulating film 26.

In step S7, as shown in FIG. 11C, the silicon oxide (third insulating film 27) is etched and removed in the opening C1 by, for example, a dry etching method using a fluorine-based gas, and an opening is formed in the opening C1. Form C2. That is, the opening C2 is provided in the third insulating film 27. In the first insulating layer 28 of the opening C2, the first insulating film 25 is stacked on the power supply line 14 and has a film thickness Bd1. In the first insulating layer 28 of the opening C1 where the opening C2 is not formed, the first insulating film 25 and the second insulating film 26 are stacked on the power supply line 14 and have a film thickness Gd1. Therefore, the opening C2 becomes the first region 28B. In the opening C1 where the opening C2 is not formed, the first insulating film 25 and the second insulating film 26 are stacked on the power supply line 14 and have a film thickness Gd1. Therefore, the opening C1 in the portion where the opening C2 is not formed becomes the second region 28G. In the first insulating layer 28 in the region where the opening C1 is not formed, the first insulating film 25, the second insulating film 26, and the third insulating film 27 are stacked on the power supply line 14 and have a film thickness Rd1. doing. Therefore, the region where the opening C1 is not formed becomes the third region 28R. Further, the opening C1 corresponds to the first region 28B and the second region 28G.

In step S7, at the same time, a contact hole 28CT1 exposing a part of the relay electrode 106G in the second region 28G and a contact hole 28CT2 exposing a part of the relay electrode 106R in the third region 28R are formed.
Here, since the first insulating film 25 is made of silicon nitride and the third insulating film 27 is made of silicon oxide, the selection ratio at the time of etching is between the first insulating film 25 and the third insulating film 27. There is. In the region corresponding to the light emitting region of the first region 28B, the etching rate becomes slow when the first insulating film 25 is exposed, and ideally the etching stops.
In the contact region of the third region 28R, the contact hole 28CT2 is formed to expose the surface of the relay electrode 106R, and in the contact region of the second region 28G, the contact hole 28CT1 is formed to expose the surface of the relay electrode 106G. At that point, the etching rate slows down, and ideally the etching stops. Similarly, in the contact region of the first region 28B, when the surface of the relay electrode 106B is exposed and the first insulating film 25 is exposed around the relay electrode 106B, the etching rate becomes slower and ideally the etching stops.

In step S8, as shown in FIG. 11D, an ITO film having a thickness of about 100 nm is formed by, for example, a sputtering method, and the ITO film is patterned to form the pixel electrode 31. In the first region 28B, the pixel electrode 31B that is in direct contact with the relay electrode 106B is formed. In the second region 28G, the pixel electrode 31G connected to the relay electrode 106G via the contact hole 28CT1 is formed. In the third region 28R, the pixel electrode 31R connected to the relay electrode 106R via the contact hole 28CT2 is formed.
After that, there is a step of forming a second insulating layer 29 that defines a light emitting region of the light emitting pixel 20, a step of forming a light emitting functional layer 32, and a step of forming a counter electrode 33.
With the above manufacturing method, the organic EL device 100 according to the present embodiment can be manufactured stably.

(Embodiment 2)
"Outline of organic EL device"
FIG. 12 corresponds to FIG. 4 and is a schematic cross-sectional view showing the configuration of the organic EL device according to the second embodiment, that is, a schematic cross-sectional view of a region in which an opening of the second insulating layer which defines a light emitting region is provided. .. FIG. 13 corresponds to FIG. 5 and is another schematic cross-sectional view showing the configuration of the organic EL device according to the second embodiment, that is, a schematic cross-sectional view of a region where the pixel electrode and the third transistor are electrically connected. ..
Hereinafter, with reference to FIG. 12 and FIG. 13, an outline of the organic EL device 200 according to the present embodiment will be described focusing on differences from the first embodiment. The same components as those in the first embodiment are designated by the same reference numerals, and duplicated description will be omitted.

In the organic EL device 200 according to the present embodiment, the configuration of the first insulating layer 28 is different from that of the first embodiment, and the other configurations are the same as those of the first embodiment.
As shown in FIG. 12, the first insulating layer 28 is an optical distance adjusting layer disposed between the power supply line 14 as a light reflecting layer and the pixel electrode 31. The first insulating layer 28 is composed of a first insulating film 25 and an organic insulating layer 61 which are sequentially stacked from the power line 14 side.

The first insulating film 25 has the same configuration as that of the first embodiment and is silicon nitride having a film thickness of approximately 50 nm.

The organic insulating layer 61 is composed of a first organic insulating film 61a and a second organic insulating film 61b which are sequentially stacked from the first insulating film 25 side. The first organic insulating film 61a and the second organic insulating film 61b are made of acrylic resin and have substantially the same refractive index as the second insulating film 26 and the third insulating film 27 (silicon oxide) in the first embodiment. Therefore, the first organic insulating film 61a has the same film thickness as the second insulating film 26 in the first embodiment, that is, the same optical distance (product of refractive index and film thickness). The second organic insulating film 61b has the same film thickness as the third insulating film 27 in the first embodiment, that is, the same optical distance (product of refractive index and film thickness). Specifically, the thickness of each of the first organic insulating film 61a and the second organic insulating film 61b is approximately 60 nm to 70 nm.

The first organic insulating film 61a and the second organic insulating film 61b may be any resin having light transparency, and in addition to the acrylic resin described above, polyester, methacrylic resin, methacrylic acid-maleic acid copolymer, polystyrene, Transparent fluororesin, polyimide, fluorinated polyimide, polyamide, polyamideimide, polyetherimide, cellulose acylate, polyurethane, polyetheretherketone, polycarbonate, alicyclic polyolefin, polyarylate, polyethersulfone, polysulfone, fluorene ring-modified polycarbonate , Alicyclic-modified polycarbonate, fluorene-ring modified polyester, acryloyl compound, polysiloxane, and other organic silicon compounds can be used.

When the refractive indices of the first organic insulating film 61a and the second organic insulating film 61b are different from the refractive indices of the second insulating film 26 and the third insulating film 27 in the first embodiment, the second insulating film 26 in the first embodiment. It is necessary to adjust the film thickness of the first organic insulating film 61a and the second organic insulating film 61b so that the optical distance is substantially the same as that of the third insulating film 27.

The organic insulating layer 61 has a portion 62 in which the first organic insulating film 61a is arranged and a portion 63 in which the first organic insulating film 61a and the second organic insulating film 61b are arranged (laminated). The first insulating layer 28 of the light emitting pixel 20B, that is, the first insulating layer 28 of the first region 28B is composed of the first insulating film 25 and has a film thickness Bd1 (approximately 50 nm). The first insulating layer 28 of the light emitting pixel 20G, that is, the first insulating layer 28 of the second region 28G, includes the first insulating film 25 and the first organic insulating film 61a (where the first organic insulating film 61a is arranged). 62 of the organic insulating layer 61) and has a film thickness Gd1 (approximately 115 nm). The first insulating layer 28 of the light emitting pixel 20R, that is, the first insulating layer 28 of the third region 28R includes the first insulating film 25, the first organic insulating film 61a, and the second organic insulating film 61b (first organic insulating film 61b). It is composed of the insulating film 61a and the organic insulating layer 61 of the portion 63 where the second organic insulating film 61b is arranged, and has a film thickness Rd1 (approximately 170 nm). In this way, the portion 62 where the first organic insulating film 61a is arranged corresponds to the second region 28G. The portion 63 where the first organic insulating film 61a and the second organic insulating film 61b are arranged corresponds to the third region 28R.

The portion 62 where the first organic insulating film 61a is arranged is an example of the "first flat portion" in the present invention, and will be hereinafter referred to as the first flat portion 62. The portion 63 where the first organic insulating film 61a and the second organic insulating film 61b are arranged is an example of the "second flat portion" in the present invention, and is hereinafter referred to as the second flat portion 63.

With such a configuration, the light emitted from the light emitting functional layer 32 is reciprocated between the power supply line 14 and the counter electrode 33 to resonate (amplify) the light having the specific wavelength, and the sealing substrate 70 emits the light having the specific wavelength. Can be emitted as display light. As a result, the light emitting pixel 20R emits red (R) light having a peak wavelength of 610 nm, the light emitting pixel 20G emits green (G) light having a peak wavelength of 540 nm, and the light emitting pixel 20B peaks at 470 nm. A blue (B) light having a wavelength is emitted.

"Outline of contact section"
Next, with reference to FIG. 13, an outline of a portion (contact portion) where the pixel electrode 31 and the third transistor 23 are electrically connected will be described.

As shown in FIG. 13, in the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B and has the same configuration as that of the first embodiment.

In the light emitting pixel 20G, the first organic insulating film 61a (the organic insulating layer 61 of the first flat portion 62) is provided between the relay electrode 106G and the pixel electrode 31G. A contact hole 28CT1 that exposes a part of the relay electrode 106G is provided in the first organic insulating film 61a. The pixel electrode 31G is connected to the relay electrode 106G via the contact hole 28CT1.

In the light emitting pixel 20R, the first organic insulating film 61a and the second organic insulating film 61b (the organic insulating layer 61 of the second flat portion 63) are provided between the relay electrode 106R and the pixel electrode 31R. The first organic insulating film 61a and the second organic insulating film 61b are provided with a contact hole 28CT2 that exposes a part of the relay electrode 106R. The pixel electrode 31R is connected to the relay electrode 106R via the contact hole 28CT2.

Also in the present embodiment, since the film thickness of the first insulating layer 28, which is an optical distance adjusting layer, is constant in each of the light emitting pixels 20B, 20G, and 20R, a known technique (Japanese Patent Laid-Open No. 2009-134067). It is possible to obtain the same effect as that of the first embodiment in which the light emitting region (openings 29B, 29G, 29R) can be made wider than that of the first publication.

"Method for manufacturing organic EL device"
Next, a method of manufacturing the organic EL device 200 will be described with reference to FIGS. 14 to 16. FIG. 14 is a process flow showing a method for manufacturing an organic EL device. 15 and 16 correspond to FIGS. 10 and 11, and are schematic cross-sectional views showing the state of the organic EL device after the respective steps shown in FIG.

As shown in FIG. 14, in the process of manufacturing the organic EL device 200, a process of forming the power supply line 14 as the light reflection layer (step S11), a process of forming the first insulating film 25 (step S12), and Forming the relay electrode 106 (step S13), forming the first organic insulating film 61a (step S14), forming the second organic insulating film 61b (step S15), and forming the pixel electrode 31. And the step of performing (step S16).

Note that step S11 is the same as step S1 in the first embodiment, step S12 is the same as step S2 in the first embodiment, step S13 is the same as step S3 in the first embodiment, and step S16 is the first embodiment. This is the same as step S9 in.

In step S11, as shown in FIG. 15A, the power supply line 14 and the relay electrode 14c are formed.

In step S12, as shown in FIG. 15B, the first insulating film 25 having the contact hole 25CT exposing a part of the relay electrode 14c is formed.

In step S13, as shown in FIG. 15C, the relay electrode 106 is formed so as to overlap the relay electrode 14c in plan view.

In step S14, as shown in FIG. 16A, for example, a photosensitive acrylic resin is applied, heat treatment (prebaking), exposure, development, curing treatment, etc. are performed to cover the first insulating film 25 and the relay electrode 106. 1 Organic insulating film 61a is formed. The photosensitive acrylic resin is a negative type resist, in which an exposed portion is cured and an unexposed portion is dissolved in a developing solution. The first organic insulating film 61a is formed in the region 65 from the second region 28G to the third region 28R, and exposes a part of the relay electrode 106R and the contact hole 28CT1 that exposes a part of the relay electrode 106G. It has a contact hole 28CT2a.

In step S15, as shown in FIG. 16B, the same material (photosensitive acrylic resin) as in step S14 is applied, and heat treatment (prebake), exposure, development, curing treatment, etc. are performed, and the second organic insulating film 61b is formed. To form. The second organic insulating film 61b is formed on the first organic insulating film 61a in the third region 28R. That is, the second organic insulating film 61b is stacked on the first organic insulating film 61a to form the second flat portion 63. The portion of the first organic insulating film 61a where the second organic insulating film 61b is not laminated becomes the first flat portion 62.
In addition, the second organic insulating film 61b has a contact hole 28CT2b that exposes a part of the relay electrode 106R. The contact hole 28CT2a provided in the first organic insulating film 61a and the contact hole 28CT2b provided in the second organic insulating film 61b form a contact hole 28CT2 exposing a part of the relay electrode 106R.

In step S16, as shown in FIG. 16C, the pixel electrode 31B directly contacting the relay electrode 106B is formed in the first region 28B, and the pixel electrode 31G connected to the relay electrode 106G through the contact hole 28CT1 is formed. A pixel electrode 31R formed in the second region 28G and connected to the relay electrode 106R through the contact hole 28CT2 is formed in the third region 28R.

In the present embodiment, the first organic insulating film 61a corresponding to the second insulating film 26 of the first embodiment and the second organic insulating film 61b corresponding to the third insulating film 27 of the first embodiment are formed of a negative resist (photosensitive material). Since it is formed by a photolithography process using an acrylic resin), steps such as film formation and etching necessary for forming the second insulating film 26 and the third insulating film 27 of the first embodiment are omitted. Therefore, as compared with the first embodiment, the manufacturing process of the first insulating layer 28 is simplified, the productivity of the organic EL device 200 is improved, and the manufacturing cost of the organic EL device 200 can be reduced.

(Embodiment 3)
"Electronics"
FIG. 17 is a schematic diagram of a head mounted display as an example of an electronic device.
As shown in FIG. 17, the head mounted display 1000 has two display units 1001 provided corresponding to the left and right eyes. The observer M can see the characters and images displayed on the display unit 1001 by mounting the head mounted display 1000 on the head like glasses. For example, if an image in which parallax is taken into consideration is displayed on the left and right display units 1001, a stereoscopic image can be viewed and enjoyed.

The organic EL device 100 according to the first embodiment or the organic EL device 200 according to the second embodiment is mounted on the display unit 1001. Since the organic EL device 100 and the organic EL device 200 have the optical resonance structure, the color purity of light emitted from the light emitting pixels 20B, 20G, and 20R is enhanced. Furthermore, in the organic EL device 100 and the organic EL device 200, since the light emitting region (openings 29B, 29G, 29R) is wide, a bright and vivid display is provided. Therefore, it is possible to provide the head-mounted display 1000 with a bright and vivid display.

The electronic device on which the organic EL device 100 or the organic EL device 200 is mounted is not limited to the head mounted display 1000. For example, it may be mounted on an electronic device having a display unit such as a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, or a navigator. Further, the present invention is not limited to the display unit, and the present invention can be applied to an illumination device and an exposure device.

The present invention is not limited to the above-described embodiments, but can be appropriately modified within the scope of the gist or concept of the invention which can be read from the claims and the entire specification, and the light-emitting device and the light-emitting device accompanied by such modifications. Electronic equipment equipped with the device is also included in the technical scope of the present invention.
Various modifications other than the above embodiment are possible. Hereinafter, a modified example will be described.

(Modification 1) FIG. 18 is a schematic plan view showing the structure of an organic EL device according to Modification 1. As shown in the figure, in the organic EL device 300 according to the present modification, the first region 28B, the second region 28G, and the third region 28R have a rectangular shape extending in the X direction. .. As described above, the first region 28B, the second region 28G, and the third region 28R are not limited to the rectangular shape (Embodiment 1) extending in the Y direction, and for example, the rectangle extending in the X direction. It may have a shape.
In the organic EL device according to the modified example 1, the Y direction is an example of the “first direction” in the present invention, and the X direction is an example of the “second direction” in the present invention. In the X direction, the light emitting pixels 20 that emit light of the same color are arranged. That is, the light emitting pixels 20B that can emit blue (B) light are arranged in the X direction and have a rectangular shape (striped shape).
The light-emitting pixel 20G that emits green (G) light is arranged in the X direction and has a rectangular shape (striped shape). The light-emitting pixel 20R that emits red (R) light is arranged in the X direction and has a rectangular shape (striped shape). In the Y direction, light emitting pixels 20 that emit light of different colors are repeatedly arranged in the order of B, G, and R. Note that the arrangement of the light emitting pixels 20 in the Y direction does not have to be in the order of B, G, and R, and may be in the order of R, G, and B, for example.

(Modification 2) FIG. 19 is a schematic plan view showing the structure of an organic EL device according to Modification 2. As shown in the figure, in the organic EL device 400 according to this modification, the light emitting pixels 20G are arranged along the Y direction, and the light emitting pixels 20B and the light emitting pixels 20R are alternately arranged along the Y direction. One light emitting pixel 20G, one light emitting pixel 20B, and one light emitting pixel 20R form a display unit P. As described above, by configuring the display unit P with the four light emitting pixels 20, finer display becomes possible compared with the case where the display unit P is configured with the three light emitting pixels 20.

The second region 28G in which the light emitting pixel 20G is arranged has a rectangular shape extending in the Y direction. The first region 28B has substantially the same shape as the light emitting pixel 20B, and the third region 28R has the same shape as the light emitting pixel 20R. The first regions 28B and the third regions 28R are alternately arranged along the Y direction.

As described above, the area in which the light emitting pixels 20B are arranged becomes the first area 28B, the area in which the light emitting pixels 20G are arranged becomes the second area 28G, and the area in which the light emitting pixels 20R are arranged is the third area. 28R. Therefore, the arrangement of the first region 28B, the second region 28G, and the third region 28R changes corresponding to the arrangement of the light emitting pixels 20B, 20G, 20R.
For example, if the light emitting pixels 20B, 20G, and 20R have a stripe arrangement, the arrangement of the first region 28B, the second region 28G, and the third region 28R is the same as those in the first and second embodiments. Such an arrangement (see FIGS. 1 and 18) is obtained. For example, if the light emitting pixels 20B, 20G, and 20R have a zigzag arrangement, the arrangement of the first region 28B, the second region 28G, and the third region 28R is also a zigzag arrangement.

(Modification 3) The organic insulating layer 61 is not limited to being composed of two organic insulating films (the first organic insulating film 61a and the second organic insulating film 61b), and may be composed of one organic insulating film. Good.
For example, a positive photosensitive resin is subjected to multi-tone exposure with a different exposure amount for each region by using a multi-tone exposure mask, and regions having different film thicknesses (first flat portion 62, second flat portion) are exposed. The organic insulating layer 61 may be formed by a method of collectively forming the portion 63 and the contact holes 28CT1 and 28CT2). As the positive photosensitive resin, for example, an alkali-soluble resin (such as a novolac resin) in which a photosensitive material (such as a naphthoquinonediazide-substituted compound) is dispersed can be used. By forming the organic insulating layer 61 with one organic insulating film, the productivity can be improved. The organic insulating layer 61 may be composed of three or more organic insulating films.

(Modification 4) The second organic insulating film 61a and the second organic insulating film 61b are not limited to being formed by a photolithography process using a negative resist (photosensitive resin). For example, it may be formed by a method such as a printing method or an inkjet method. Similarly, the organic insulating layer 61 according to Modification 3 may also be formed by a method such as a printing method or an inkjet method.

(Modification 5) The first insulating film 25 may be made of an organic material, that is, the entire first insulating layer 28 may be made of an organic material. For example, the first insulating film 25 may be formed by a photolithography process using the same organic material (photosensitive acrylic resin) as in the second embodiment. The productivity can be increased by changing the material forming the first insulating film 25 from an inorganic material (silicon nitride) to an organic material (photosensitive acrylic resin) and patterning only by a photolithography process.

10... Element substrate, 10a... Insulating film, 10d... Ion implantation part, 10s... Base material, 10w... Well part, 11... Scan line, 12... Data line, 13... Lighting control line, 14... Power supply line, 14c... Relay Electrodes, 15... First interlayer insulating film, 16... Second interlayer insulating film, 17... Third interlayer insulating film, 20, 20B, 20G, 20R... Light emitting pixel, 21... First transistor, 21d... Drain electrode, 22... Second transistor, 22g... Gate electrode, 22s... Source electrode, 23... Third transistor, 23g... Gate electrode, 23s... Source electrode, 24... Storage capacitor, 24a... One electrode, 24b... Other electrode, 25... 1 insulating film, 26... 2nd insulating film, 27... 3rd insulating film, 28... 1st insulating layer, 28B... 1st area|region, 28G... 2nd area|region, 28R... 3rd area|region, 29... 2 insulating layer, 29B... Opening (light emitting pixel 20B), 29G... Opening (light emitting pixel 20G), 29R... Opening (light emitting pixel 20R), 30... Organic EL element, 31, 31B, 31G, 31R... Pixel electrode, 32 ... Light-emitting functional layer, 33... Counter electrode, 40... Sealing layer, 41... First sealing layer, 42... Buffer layer, 43... Second sealing layer, 50... Color filter, 50B, 50G, 50R... Coloring layer , 61... Organic insulating layer, 61a... First organic insulating film, 61b... Second organic insulating film, 62... First flat portion, 63... Second flat portion, 71... Resin layer, 70... Sealing substrate, Reference numeral 100, 200, 300, 400... Organic EL device, 101... Data line drive circuit, 102... Scan line drive circuit, 103... External connection terminal, 106... Relay electrode.

Claims (6)

The first transistor,
A second transistor,
A third transistor,
A light reflecting layer provided over the plurality of pixels, above the first transistor, the second transistor, and the third transistor;
A third layer that covers the light reflection layer and has a first layer thickness, a second layer thickness that is thicker than the first layer thickness, and a third layer that is thicker than the second layer thickness. A first insulating layer having a layer thickness portion;
A first pixel electrode provided on the portion having the first layer thickness;
A first relay electrode electrically connected to the first transistor;
A second pixel electrode provided on the portion having the second layer thickness;
A second relay electrode electrically connected to the second transistor;
A third pixel electrode provided on the portion having the third layer thickness;
A third relay electrode electrically connected to the third transistor,
A counter electrode,
Between the counter electrode and the first pixel electrode, and the between the second pixel electrode and the counter electrode, and the light emitting functional layer provided between the counter electrode and the third pixel electrode ,,
The first relay electrode, the second relay electrode, and the third relay electrode are formed in the same layer as the light reflection layer,
The first relay electrode is connected to the first pixel electrode via a first connecting portion provided in the portion having the first layer thickness,
The second relay electrode is connected to the second pixel electrode via a second connection portion provided in the portion having the second layer thickness,
The third relay electrode is connected to the third pixel electrode via a third connecting portion provided in the portion having the third layer thickness,
The portion having the first layer thickness is provided so as to surround the first connection portion,
The portion having the second layer thickness is provided so as to surround the second connection portion,
The portion having the third layer thickness is provided so as to surround the third connection portion ,
The light reflection layer has a first opening, a second opening, and a third opening,
The first relay electrode is disposed in the first opening,
The second relay electrode is disposed in the second opening,
The light emitting device according to claim 1, wherein the third relay electrode is disposed in the third opening. A first conductive layer electrically connected to the first relay electrode and arranged to cover the first opening in a plan view;
A second conductive layer electrically connected to the second relay electrode and arranged to cover the second opening in a plan view;
The light emitting device according to claim 1, further comprising a third conductive layer that is electrically connected to the third relay electrode and that is disposed so as to cover the third opening in a plan view. .. The first insulating layer has a first insulating film, a second insulating film, and a third insulating film,
The first insulating film is provided between the first pixel electrode and the light reflecting layer,
The first insulating film and the second insulating film are provided between the second pixel electrode and the light reflecting layer,
The first insulating film, the second insulating film, and the third insulating film are provided between the third pixel electrode and the light reflecting layer,
The first conductive layer in the first connection portion is connected to the first relay electrode through a first contact hole that penetrates the first insulating film, and is in contact with the first pixel electrode,
The second conductive layer in the second connection portion is connected to the second relay electrode through a second contact hole that penetrates the first insulating film, and a third conductive layer that penetrates the second insulating film. Connected to the second pixel electrode through a contact hole,
The third conductive layer in the third connection portion is connected to the third relay electrode through a fourth contact hole that penetrates the first insulating film, and the second insulating film and the third insulating film. The light emitting device according to claim 2 , wherein the light emitting device is connected to the third pixel electrode through a fifth contact hole penetrating the film. A fourth transistor,
A fourth pixel electrode provided on the portion having the second layer thickness;
A fourth relay electrode electrically connected to the fourth transistor,
Further equipped with,
The fourth relay electrode is connected to the fourth pixel electrode via a fourth connection portion provided in the portion having the second layer thickness,
The light emitting device according to claim 3 , wherein the first insulating film and the second insulating film are provided so as to fill a space between the second connecting portion and the fourth connecting portion. 5. The first relay electrode, the second relay electrode, and the third relay electrode are made of the same material as the light reflecting layer, and the first relay electrode, the second relay electrode, and the third relay electrode are made of the same material. The light emitting device according to. Electronic apparatus, characterized in that it comprises a light-emitting device according to any one of claims 1 to 5.

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