CN103000660B - Array substrate and white organic light-emitting diode display device - Google Patents
Array substrate and white organic light-emitting diode display device Download PDFInfo
- Publication number
- CN103000660B CN103000660B CN201210536738.0A CN201210536738A CN103000660B CN 103000660 B CN103000660 B CN 103000660B CN 201210536738 A CN201210536738 A CN 201210536738A CN 103000660 B CN103000660 B CN 103000660B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- white
- white organic
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides an array substrate and a white organic light-emitting diode display device and belongs to the technical field of organic light-emitting diode display. The problems that a prior white organic light-emitting diode display device is low in aperture ratio and complex in structure are solved. The array substrate comprises a plurality of pixel units located on the substrate, wherein each of the pixel units comprises a thin film transistor drive layer and a white organic light-emitting diode which is driven by the thin film transistor drive layer, the thin film transistor drive layer and the white organic light-emitting diode are arranged in the direction which is far away from the substrate gradually, and the white organic light-emitting diode comprises a reflective anode layer, a white light-emitting layer, a transparent cathode layer and a colorful film in the direction which is far away from the substrate gradually. The white organic light-emitting diode display device comprises the array substrate.
Description
Technical field
The invention belongs to organic light-emitting diode display technical field, be specifically related to a kind of array base palte, white organic LED display unit.
Background technology
Organic Light Emitting Diode (OLED, Organic Light Emitting Diode) is a kind of electroluminescent device of organic thin film, the advantages such as it has, and preparation technology is simple, cost is low, luminous efficiency is high, easily form flexible structure, visual angle is wide; Therefore, the Display Technique of Organic Light Emitting Diode is utilized to become a kind of important Display Technique.
Because the technology of white organic LED (WOLED) is the most ripe, good stability, preparation technology are simple, therefore are applied widely in a display device.For make white organic LED can carry out colour display, its also will with color film (also known as colored filter) with the use of.In white organic LED display unit, each external world visible minimum image vegetarian refreshments (i.e. " visible pixels ") is made up of multiple pixel cell, there is in each pixel cell the color film of different colours, thus the light that the white organic LED of different pixels unit sends is becoming different colours after color film, the light of these different colours is being mixed into the light that " visible pixels " sends.
As shown in Figure 1, existing white organic LED display unit comprises array base palte, and substrate 9 is provided with thin-film transistor (TFT) and drives layer 1; Thin-film transistor drives layer 1 to be provided with color film 5; Color film 5 is provided with the white organic LED driving layer 1 to drive by thin-film transistor; Confining bed 6 is provided with outside white organic LED.Wherein, on the direction gradually away from substrate 9, white organic LED comprises transparent anode layer 2, white-light emitting layer 3, cathode layer 4 successively; The light that white-light emitting layer 3 sends penetrates for showing from substrate 9 after driving layer 1 through anode layer 2, color film 5, thin-film transistor successively.
Inventor finds that in prior art, at least there are the following problems: thin-film transistor drives in layer and is provided with a large amount of thin-film transistors, and the active area of thin-film transistor can not be subject to illumination, therefore pixel confining layers (PDL) also will be set in the array base palte of existing white organic LED display unit be subject to illumination to avoid this region, this pixel confining layers can be located between white-light emitting layer and anode layer to block electric current, thus stop the white organic LED in this region luminous, or pixel confining layers also can be used for stopping light; Visible, existing white organic LED display unit aperture opening ratio is low, complex structure; Simultaneously, in above-mentioned white organic LED display unit, color film is located at (i.e. COA pattern) on array base palte, though can save independent color membrane substrates like this, but its color film and thin-film transistor drive layer to contact, therefore can impact the characteristic of thin-film transistor.
Summary of the invention
Technical problem to be solved by this invention comprises, and for low, the baroque problem of existing white organic LED display unit aperture opening ratio, provides that a kind of aperture opening ratio is high, the simple array base palte of structure.
The technical scheme that solution the technology of the present invention problem adopts is a kind of array base palte, and it comprises multiple pixel cell be positioned on substrate, is comprising successively gradually away from pixel cell described on the direction of substrate:
Thin-film transistor drives layer;
By the white organic LED that thin-film transistor drives layer to drive, comprising successively away from white organic LED described on the direction of substrate gradually: reflective anode layer, white-light emitting layer, transparent cathode layer;
Color film.
Wherein, " thin-film transistor driving layer " comprises the array architecture of thin film transistor for driving Organic Light Emitting Diode, and it comprises the sandwich constructions such as thin-film transistor, scan line, data wire, power voltage line, insulating barrier, passivation layer." white-light emitting layer " refers to structure that can be luminous under the function of current, it at least comprises an electroluminescent organic material layer (EML), but also can comprise: be positioned at the electron transfer layer (ETL) between electroluminescent organic material layer and cathode layer and electron injecting layer (EIL); Be positioned at other structures such as hole injection layer (HIL) and hole transmission layer (HTL) between electroluminescent organic material layer and anode layer.And the function that " white-light emitting layer " emits white light realizes by multiple different mode, as wherein having the electroluminescent organic material layer of rubescent, green, the blue three color light of overlapping setting, thus the light making them send is mixed into white light; Or the electroluminescent organic material sending out different colours light can be mixed into an electroluminescent organic material layer, thus sends white light.
Array base palte Anodic layer of the present invention is reflective, cathode layer is transparent, thus light is penetrated from the direction away from substrate, therefore the thin-film transistor being positioned at below anode layer drives layer can not be subject to light irradiation; Therefore the position at its thin-film transistor place also can be luminous, therefore aperture opening ratio is high, and luminous efficiency is high, and structure is simple, and cost is low; Meanwhile, although the present invention prizes, film is also located on array base palte and (namely also adopts COA pattern), and color film does not drive layer to contact with thin-film transistor, can not affect the characteristic of thin-film transistor.
Preferably, described anode layer comprises near the reflector layer of substrate and the transparent anode conductive layer away from substrate.
Further preferably, described reflector layer is made up of silver or aluminium, and thickness is more than or equal to 15nm; Described anode conductive layer is made up of the oxide of silver or the fluoride of carbon, and thickness is less than or equal to 5nm.
Preferably, described anode layer is reflective anode conductive layer, and described reflective anode conductive layer is made of gold, and thickness is between 15 ~ 30nm.
Preferably, described cathode layer comprises transparent cathode conductive layer, and described cathode conductive layer is made up of tin indium oxide or indium zinc oxide.
Further preferably, described cathode layer also comprises: the transparent protective layer being positioned at described cathode conductive layer and white-light emitting interlayer.
Further preferably, described protective layer is made up of calcium or aluminium, and thickness is less than or equal to 25nm; Described protective layer by near substrate the first metal layer and form away from the second metal level of substrate; Described the first metal layer is made up of any one in magnesium, calcium, barium, aluminium, ytterbium, and thickness is less than or equal to 15nm; Described second metal level is made up of any one in silver, magnesium, gold, and its material is different from the material of described the first metal layer, and thickness is less than or equal to 3nm.
Preferably, described cathode layer comprises antireflection layer.
Further preferably, described antireflection layer is made up of any one in zinc selenide, tellurium dioxide, three (oxine) aluminium.
Technical problem to be solved by this invention also comprises, and for low, the baroque problem of existing white organic LED display unit aperture opening ratio, provides that a kind of aperture opening ratio is high, the simple array base palte of structure.
The technical scheme that solution the technology of the present invention problem adopts is a kind of white organic LED display unit, and it comprises above-mentioned array base palte.
Owing to using above-mentioned array base palte in white organic LED display unit of the present invention, therefore its aperture opening ratio is high, luminous efficiency is high, structure is simple, cost is low.
Accompanying drawing explanation
Fig. 1 is the part section structural representation of the array base palte of existing white organic LED display unit;
Fig. 2 is the part section structural representation of the array base palte of embodiments of the invention 2.
Wherein Reference numeral is: 1, thin-film transistor drives layer; 2, anode layer; 21, reflector layer; 22, anode conductive layer; 3, white-light emitting layer; 4, cathode layer; 41, protective layer; 411, the first metal layer; 412, the second metal level; 42, antireflection layer; 43, cathode conductive layer; 5, color film; 6, confining bed; 9, substrate.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1:
The present embodiment provides a kind of array base palte, and it comprises multiple pixel cell be positioned on substrate, is comprising successively gradually away from pixel cell described on the direction of substrate:
Thin-film transistor drives layer.
By the white organic LED that thin-film transistor drives layer to drive, comprising successively away from white organic LED described on the direction of substrate gradually: reflective anode layer, white-light emitting layer, transparent cathode layer.
Color film.
The array base palte Anodic layer of the present embodiment is reflective, cathode layer is transparent, thus light is penetrated from the direction away from substrate, therefore the thin-film transistor being positioned at below anode layer drives layer can not be subject to light irradiation; Therefore, the position at its thin-film transistor place also can be luminous, therefore aperture opening ratio is high, and luminous efficiency is high, and structure is simple, and cost is low; Meanwhile, although the present embodiment is prized, film is also located on array base palte and (namely also adopts COA pattern), and color film does not drive layer to contact with thin-film transistor, can not affect the characteristic of thin-film transistor.
Embodiment 2:
As shown in Figure 2, the present embodiment provides a kind of array base palte, and it comprises multiple pixel cell be positioned on substrate 9, and multiple adjacent pixel cell with the color film 5 of different colours is formed " visible pixels " in a display unit.Wherein, color film 5 color of the pixel cell of " visible pixels " can be multiple different mode; Such as, one " visible pixels " can comprise pixel cell, the pixel cell of a band green tint film 5, the pixel cell (i.e. RGB pattern) of a band blue color film 5 of a color film 5 redly; Or it also can be RGBW pattern (increasing the pixel cell of a white color film 5 of band), RGBY pattern (increasing the pixel cell of a yellow color film 5 of band) etc.
On the direction gradually away from substrate 9, comprise thin-film transistor in pixel cell successively and drive layer 1, white organic LED, color film 5, confining bed 6.
Wherein, the primary structure of thin-film transistor driving layer 1 is the thin film transistor (TFT) array for driving white organic LED luminescence.Such as, a kind of thin-film transistor drives layer 1 can comprise many cluster films transistor, every cluster film transistor controls pixel cell; Every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor.The grid of switching thin-film transistor connects scan line, source electrode connection data line, and drain electrode connects the grid driving thin-film transistor; And drive the source electrode of thin-film transistor to connect power voltage line, (anode layer 2 in each pixel cell is normally separate for the anode layer 2 of drain electrode connection white organic LED, thus ensure they can carrying out independently show), and and form storage capacitors between the drain electrode of switching thin-film transistor.Certainly, more than just thin-film transistor drives a kind of concrete structure of layer 1, and thin-film transistor drives layer 1 also can adopt other structure, as long as it can white organic LED in each pixel cell of drive.Because thin-film transistor drives layer 1 can adopt multiple different form known, therefore be not described in detail at this.
White organic LED drives layer 1 to drive by thin-film transistor, and on the direction gradually away from substrate 9, white organic LED comprises successively: reflective anode layer 2, white-light emitting layer 3, transparent cathode layer 4.
Because wherein anode layer 2 is reflective and cathode layer 4 is transparent, therefore the light that white-light emitting layer 3 sends can penetrate from the direction away from substrate 9, thin-film transistor drives layer 1 not irradiate by light, the position at thin-film transistor place also can be luminous, therefore its aperture opening ratio is high, luminous efficiency is high, structure is simple, and cost is low.
Preferably, as shown in Figure 2, anode layer 2 can comprise near the reflector layer 21 of substrate 9 and the transparent anode conductive layer 22 away from substrate 9.
For better luminescence, the work function of the cathode and anode material in white organic LED is (also known as work function, refer to an electronics to move on to minimum energy needed for body surface from interior of articles, represent the ability of object bound electron) should mate with the work function of white-light emitting layer 3 material; Meanwhile, this anode layer 2 also should be able to realize reflective function.The material selection range simultaneously meeting above-mentioned two conditions is narrower, for this reason, can be divided into two-layer by anode layer 2, wherein near substrate 9 is for reflective reflector layer 21, and what contact white-light emitting layer 3 is anode conductive layer 22, it is transparent, can conduct electricity and have suitable work function.
Preferred, reflector layer 21 is made up of silver or aluminium, and for ensureing reflecting effect, reflector layer 21 should be too not thin, usually should be greater than 15nm; And anode conductive layer 22 is by the oxide (AgO of silver
x) or the fluoride (CF of carbon
x) make, transparent for ensureing, anode conductive layer 22 should be too not thick, usually should be less than 5nm.
Find after deliberation, the reflector layer 21 and the anode conductive layer 22 that meet above-mentioned condition can distinguish respond well realization function separately; Meanwhile, because silver, aluminium also have conductivity, therefore can play the effect of additional conductive.
Preferably, as the another kind of mode of anode layer 2, anode layer 2 also can be reflective anode conductive layer, and reflective anode conductive layer is made of gold, and for ensureing reflecting effect, its thickness is usually between 15 ~ 30nm.
That is, anode layer 2 also can be single layer structure, and it not only can be reflective but also can be used as anode conducting, and find after deliberation, the anode layer 2 that gold is made can meet above-mentioned requirement.
White-light emitting layer 3 can adopt known structure, wherein can include electroluminescent material layer, electron transfer layer, electron injecting layer, hole injection layer, hole transmission layer etc.; Its mode emitted white light also can be known, such as, emitted white light by the electroluminescent organic material layer that is rubescent respectively, green, blue three color light of overlapping setting, or the electroluminescent organic material sending out different colours light is mixed and made into electroluminescent organic material layer.
Can comprise transparent cathode conductive layer 43 in cathode layer 4, this cathode conductive layer 43 is made up of tin indium oxide or indium zinc oxide.
Tin indium oxide (ITO) and indium zinc oxide (IZO) are conductive transparent materials conventional in display unit, and it is formed by modes such as sputterings.Generally, the thickness of this cathode conductive layer 43 is at about 150 ~ 250nm.
Preferably, between cathode conductive layer 43 and white-light emitting layer 3, transparent protective layer 41 can be also provided with.
Cathode conductive layer 43 will be formed by sputtering technology usually, therefore may cause damage to the white-light emitting layer 3 made primarily of organic material in preparation process; Meanwhile, the work function of tin indium oxide, indium zinc oxide is usually also bad with mating of white-light emitting layer 3; Therefore, protective layer 41 can be set up between cathode conductive layer 43 and white-light emitting layer 3; Obviously, this protective layer 41 also should be transparent.
Preferably, protective layer 41 is made up of calcium or aluminium, and thickness is less than or equal to 25nm.
That is, this protective layer 41 can be ultra-thin metal layer; Find after deliberation, the ultra-thin metal layer of above-mentioned material and thickness both can play a protective role, and can ensure printing opacity again.
Or as shown in Figure 2, preferably, protective layer 41 also by the first metal layer 411 of close substrate 9 and can be formed away from the second metal level 412 of substrate 9.Wherein the first metal layer 411 is made up of any one in magnesium, calcium, barium, aluminium, ytterbium, and thickness is less than 15nm; Second metal level 412 is made up (material of its material the first metal layer 411 is different) of any one in silver, magnesium, gold, and thickness is less than 3nm.
That is, protective layer 41 also can be double-deck ultra-thin metal layer, such as Ca layer+Ag layer, Ba layer+Mg layer, Yb layer+Au layer etc.Find after deliberation, the double-deck ultra-thin metal layer of above-mentioned material and thickness both can play a protective role, and can ensure printing opacity again.
Preferably, antireflection layer 42 is also comprised in cathode layer 4; This antireflection layer 42 can as shown in Figure 2 between protective layer 41 and cathode conductive layer 43.
Preferably, antireflection layer 42 is by zinc selenide (ZnSe), tellurium dioxide (TeO
2), three (oxine) aluminium (Alq
3) in any one make.
By arranging antireflection layer 42, the light transmission of cathode layer 4 greatly can be improved.
Certainly, although in the present embodiment with antireflection layer 42 between protective layer 41 and cathode conductive layer 43 as an example, should be appreciated that antireflection layer 42 also can be positioned at other positions of cathode layer 4, as long as it is between color film 5 and white-light emitting layer 3.
Color film 5 is located at outside white organic LED, and the color film 5 in different pixels unit is different color.
Also confining bed 6 can be provided with, for the protection of other structures in array base palte outside color film 5.
Certainly, if by the location swap (namely color film 5 be located at confining bed 6 outside) of color film 5 with confining bed 6, be also feasible.
Each structure on the array base palte of the present embodiment is all formed by known technique; For complete rete, formed by modes such as evaporation, printing, sputtering, coating, chemical vapour deposition (CVD)s; And for having the rete of figure, directly formed by modes such as ink jet printings, or also formed by patterning processes, complete rete will be first formed in patterning processes, removed a part for this complete rete afterwards by photoetching process (generally including the steps such as photoresist coating, exposure, development, etching, photoresist lift off), make remainder form required figure.Preparation method due to array base palte has multiple and is known, therefore is not described in detail at this.
Embodiment 3:
The present embodiment provides a kind of white organic LED display unit, and it comprises above-mentioned array base palte.
Other known elements also can be comprised, as shell, power supply module etc. in the white organic LED display unit of the present embodiment; It can be any product or parts with Presentation Function such as display floater, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
Use above-mentioned array base palte in the white organic LED display unit of the present embodiment, therefore its aperture opening ratio is high, luminous efficiency is high, structure is simple, cost is low.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (7)
1. an array base palte, comprises multiple pixel cell be positioned on substrate, it is characterized in that, is comprising successively gradually away from pixel cell described on the direction of substrate:
Thin-film transistor drives layer;
By the white organic LED that thin-film transistor drives layer to drive, comprising successively away from white organic LED described on the direction of substrate gradually: reflective anode layer, white-light emitting layer, transparent cathode layer;
Color film;
Described anode layer comprises near the reflector layer of substrate and the transparent anode conductive layer away from substrate, described reflector layer is made up of silver or aluminium, and thickness is more than or equal to 15nm, described anode conductive layer is made up of the oxide of silver or the fluoride of carbon, and thickness is less than or equal to 5nm; Or
Described anode layer is reflective anode conductive layer, and described reflective anode conductive layer is made of gold, and thickness is between 15 ~ 30nm.
2. array base palte according to claim 1, is characterized in that,
Described cathode layer comprises transparent cathode conductive layer, and described cathode conductive layer is made up of tin indium oxide or indium zinc oxide.
3. array base palte according to claim 2, is characterized in that, described cathode layer also comprises:
Be positioned at the transparent protective layer of described cathode conductive layer and white-light emitting interlayer.
4. array base palte according to claim 3, is characterized in that,
Described protective layer is made up of calcium or aluminium, and thickness is less than or equal to 25nm;
Or
Described protective layer by near substrate the first metal layer and form away from the second metal level of substrate; Described the first metal layer is made up of any one in magnesium, calcium, barium, aluminium, ytterbium, and thickness is less than or equal to 15nm; Described second metal level is made up of any one in silver, magnesium, gold, and its material is different from the material of described the first metal layer, and thickness is less than or equal to 3nm.
5. array base palte as claimed in any of claims 1 to 4, is characterized in that,
Described cathode layer comprises antireflection layer.
6. array base palte according to claim 5, is characterized in that,
Described antireflection layer is made up of any one in zinc selenide, tellurium dioxide, three (oxine) aluminium.
7. a white organic LED display unit, is characterized in that, comprising:
Array base palte in claim 1 to 6 described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210536738.0A CN103000660B (en) | 2012-12-12 | 2012-12-12 | Array substrate and white organic light-emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210536738.0A CN103000660B (en) | 2012-12-12 | 2012-12-12 | Array substrate and white organic light-emitting diode display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103000660A CN103000660A (en) | 2013-03-27 |
| CN103000660B true CN103000660B (en) | 2015-07-15 |
Family
ID=47929030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210536738.0A Active CN103000660B (en) | 2012-12-12 | 2012-12-12 | Array substrate and white organic light-emitting diode display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103000660B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400940A (en) * | 2013-07-30 | 2013-11-20 | 信利半导体有限公司 | Cathode, OLED (Organic Light Emitting Diode) device, manufacturing method of OLED device and OLED display device |
| CN104851981B (en) | 2014-02-18 | 2018-02-06 | 财团法人工业技术研究院 | Blue light emitting element and light emitting element |
| CN103943661A (en) | 2014-04-15 | 2014-07-23 | 京东方科技集团股份有限公司 | Display device and manufacturing method thereof |
| CN105629559A (en) * | 2016-01-12 | 2016-06-01 | 武汉华星光电技术有限公司 | Manufacturing method of color filter substrate |
| CN107017347A (en) * | 2016-05-06 | 2017-08-04 | 广东聚华印刷显示技术有限公司 | Organic electroluminescence device and preparation method thereof |
| CN111244317B (en) * | 2018-11-27 | 2022-06-07 | 海思光电子有限公司 | Light emitting device and terminal equipment |
| CN113299861A (en) * | 2021-06-25 | 2021-08-24 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521870A (en) * | 2003-01-27 | 2004-08-18 | 友达光电股份有限公司 | Organic light-emitting diode having a breaker construction and method for making same |
| CN1674728A (en) * | 2004-03-24 | 2005-09-28 | Lg.菲利浦Lcd株式会社 | Organic electroluminescence device and fabrication method thereof |
| CN101345292A (en) * | 2008-05-29 | 2009-01-14 | 清华大学 | Top-illuminating OLED display device and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005235566A (en) * | 2004-02-19 | 2005-09-02 | Seiko Epson Corp | Electro-optical device and electronic apparatus |
| TWI365005B (en) * | 2008-01-04 | 2012-05-21 | Chimei Innolux Corp | Organic light emitting diode (oled) display devices, modules, and electronic devices |
| KR101492630B1 (en) * | 2008-06-10 | 2015-03-03 | 엘지디스플레이 주식회사 | Organic light emitting diodde desplay device |
-
2012
- 2012-12-12 CN CN201210536738.0A patent/CN103000660B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521870A (en) * | 2003-01-27 | 2004-08-18 | 友达光电股份有限公司 | Organic light-emitting diode having a breaker construction and method for making same |
| CN1674728A (en) * | 2004-03-24 | 2005-09-28 | Lg.菲利浦Lcd株式会社 | Organic electroluminescence device and fabrication method thereof |
| CN101345292A (en) * | 2008-05-29 | 2009-01-14 | 清华大学 | Top-illuminating OLED display device and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103000660A (en) | 2013-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103000660B (en) | Array substrate and white organic light-emitting diode display device | |
| US11456434B2 (en) | Organic light emitting diode display including white light emitting diodes | |
| CN103000638B (en) | Array base palte and preparation method thereof, organic LED display device | |
| KR102047230B1 (en) | White organic light emitting diode and display device using the same | |
| KR101649224B1 (en) | Top Emission White Organic Light Emitting Display Device | |
| WO2020192051A1 (en) | Display panel and preparation method thereof | |
| CN103000639A (en) | Array substrate, preparation method of array substrate and organic light-emitting diode display device | |
| CN103022079A (en) | Array substrate, preparation method of array substrate and organic light emitting diode display device | |
| US7911131B2 (en) | Organic light emitting diode display having differently colored layers | |
| CN102855820A (en) | Organic light emitting display device | |
| KR20150018031A (en) | Organic light emitting diode display | |
| KR20050007159A (en) | Emissive display device | |
| US20120080668A1 (en) | Organic el lighting device and method of manufacturing the same | |
| CN103579287A (en) | Organic light emitting diode display | |
| CN104347680A (en) | AMOLED (Active Matrix/Organic Light Emitting Diode) display panel and manufacturing method thereof and display device | |
| CN103022081B (en) | Array substrate, preparation method of array substrate and organic light emitting diode display device | |
| CN203218266U (en) | Array substrate, organic light emitting diode display device | |
| CN103022048B (en) | Array base palte and preparation method thereof, organic LED display device | |
| KR20180077834A (en) | Electroluminescent Display Device | |
| US20100252841A1 (en) | Oled device having improved lifetime and resolution | |
| WO2015027532A1 (en) | Organic light emitting diode anode connection structure and manufacturing method thereof | |
| US20120319147A1 (en) | Organic light emitting diode display | |
| CN203150551U (en) | Array substrate and organic light emitting diode display device | |
| CN203013729U (en) | Array substrate and organic light emitting diode display device | |
| CN202996839U (en) | Array substrate and organic light emitting diode display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |