CN203218266U - Array substrate, organic light emitting diode display device - Google Patents
Array substrate, organic light emitting diode display device Download PDFInfo
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- CN203218266U CN203218266U CN 201220686669 CN201220686669U CN203218266U CN 203218266 U CN203218266 U CN 203218266U CN 201220686669 CN201220686669 CN 201220686669 CN 201220686669 U CN201220686669 U CN 201220686669U CN 203218266 U CN203218266 U CN 203218266U
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Abstract
The utility model discloses an array substrate and an organic light emitting diode display device, which belong to the technical field of displaying of organic light emitting diodes and solve the problems of the existing organic light emitting diode display device that its light emitting efficiency is still not high. A pixel unit of the array substrate comprises a thin-film transistor driving layer; an organic light emitting diode farther away from the substrate than the thin-film transistor driving layer and driven by the thin-film transistor driving layer, wherein the organic light emitting diode sequentially comprises a first electrode, a light emitting layer and a transparent second electrode; the first electrode is a reflective layer or a transparent layer with a reflective layer below; a semi-reflective semi-transparent layer much father away from the substrate than the organic light emitting diode, wherein a micro-cavity structure is formed by the semi-reflective semi-transparent layer and the reflective layer; and a colorful film arranged between the organic light emitting diode and the semi-reflective semi-transparent layer and in the micro-cavity structure. The array substrate is especially suitable for the white organic light emitting diode display device.
Description
Technical field
The utility model belongs to Organic Light Emitting Diode Display Technique field, is specifically related to a kind of array base palte, organic LED display device.
Background technology
Organic Light Emitting Diode (OLED, Organic Light Emitting Diode) is a kind of electroluminescent device of organic thin film, and it has, and preparation technology is simple, cost is low, luminous efficiency is high, easily form advantages such as flexible structure.Therefore, utilize the Display Technique of Organic Light Emitting Diode to become a kind of important Display Technique.
Organic LED display device comprises a plurality of pixel cells, is provided with an Organic Light Emitting Diode in each pixel cell, can control their luminous intensity by the electric current of controlling each Organic Light Emitting Diode, thereby realizes showing.Wherein, each on the display " visible pixels " is made of a plurality of pixel cells adjacent and that send different colours light, and the light that each pixel cell sends becomes the light that this " visible pixels " sent after mixing; The color (being the color of color film) of forming the pixel cell of " visible pixels " can have multiple different mode, for example RGB (RGB) pattern (namely " visible pixels " formed in a red pixel unit, a green pixel unit, a yellow pixel unit), RGBW (red, green, blue and white) pattern, RGBY (red, green, blue and yellow) pattern etc.
Since the technology comparative maturity of white organic LED (WOLED), the luminous efficiency height, so it has obtained extensive use in organic LED display device.
As shown in Figure 1, one " visible pixels " of white organic LED display unit can comprise red, green, blue three pixel cell 9R, 9G, the 9B (also can be other patterns certainly) that is located on the substrate 7, be provided with thin-film transistor (TFT) among each pixel cell 9R, 9G, the 9B and drive layer 1, drive on the layer 1 at thin-film transistor and be provided with anode (first electrode 21), luminescent layer 23, negative electrode (second electrode 22), confining bed 8 (Encapsulation), the color film 3R of respective color, 3G, 3B (claiming colored filter again) successively.Wherein, anode, luminescent layer 23, negative electrode constitute OLED 2, but thin-film transistor drives the anode of layer 1 drive each pixel cell 9R, 9G, 9B, thereby make each Organic Light Emitting Diode 2 send the light of different brightness, become different colours behind the corresponding color film 3R of these light processes, 3G, the 3B, and be mixed into " visible pixels " issued light.
For improving luminous efficiency, can in organic LED display device, form microcavity (Micro Cavity) structure.Micro-cavity structure refers to that the thickness that forms is the structure of micron dimension between a reflector and half anti-semi-permeable layer, light can constantly reflect at two interlayers, because resonance effect, so finally the light of specific wavelength can be strengthened from the light that the half-reflection and half-transmission layer penetrates, and the wavelength that this is strengthened is relevant with microcavity thickness.
In the white organic LED display unit, the different pixels unit is be used to the light that sends different colours, therefore the microcavity at place, different pixels unit should be able to make the light (light identical with its color film color) of different wave length obtain to strengthen, and namely the microcavity thickness at place, different pixels unit should be different.For reaching this purpose, can be as shown in Figure 2, in the white organic LED display unit, be half-reflection and half-transmission layer 6 with the negative electrode, and anode is made as hyaline layer, and below anode, set up reflector 4; Like this, as long as regulate the thickness that the thickness of each anode can be controlled the micro-cavity structure of respective pixel unit 9R, 9G, 9B.
The inventor finds that there are the following problems at least in the prior art: each anode of array base palte is in in one deck, originally can in a composition technology, form simultaneously, but in having the white organic LED display unit of microcavity, anode thickness difference in each pixel cell, so they will repeatedly form respectively in the composition technology, perhaps in composition technology, will use the duotone mask plate, and these all can cause complicated process of preparation, cost height.
The utility model content
Technical problem to be solved in the utility model comprises, at the high problem of array base palte complicated process of preparation, cost with micro-cavity structure of the prior art, provides the array base palte that a kind of preparation technology is simple, cost is low.
The technical scheme that solution the utility model technical problem adopts is a kind of array base palte, and it comprises a plurality of pixel cells that are positioned on the substrate, and described pixel cell comprises: thin-film transistor drives layer; Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises first electrode, luminescent layer, transparent second electrode successively on away from the direction of substrate; Wherein, first electrode is the reflector, or first electrode is transparent and there is the reflector its below; Than the half-reflection and half-transmission layer of described Organic Light Emitting Diode further from substrate, itself and described reflector constitute micro-cavity structure; Be arranged in described Organic Light Emitting Diode and half-reflection and half-transmission interlayer and be in the color film of micro-cavity structure.
Wherein, " thin-film transistor drives layer " refers to that it comprises sandwich constructions such as thin-film transistor, scan line, data wire, power voltage line, insulating barrier, passivation layer for the array architecture of thin film transistor that drives Organic Light Emitting Diode." Organic Light Emitting Diode " refers to by first electrode, second electrode and is clipped in the luminous structure of energy that two interelectrode luminescent layers constitute, may have only second electrode and luminescent layer in the part position (as the position between each pixel cell) of substrate and not have first electrode (so first electrode in each pixel cell is separate), the pixel that perhaps also can be provided with insulation between electrode and luminescent layer limits layer, these positions can not be luminous, so be not " Organic Light Emitting Diode "; Therefore, as long as the reflector is positioned at the position relative with " Organic Light Emitting Diode " with color film, and can there be reflector and color film in the zone that does not constitute " Organic Light Emitting Diode "." luminescent layer " refers to can be under the function of current luminous structure, and it can be single layer structure, also can be made up of a plurality of different layers; " luminescent layer " comprises an electroluminescent organic material layer (EML) at least, but it also can comprise: be positioned at electron transfer layer (ETL) and electron injecting layer (EIL) between electroluminescent organic material layer and cathode layer; The hole injection layer (HIL) and the hole transmission layer (HTL) that are positioned between electroluminescent organic material layer and anode layer wait other structures.
In the array base palte of the present utility model, color film is among the micro-cavity structure, therefore can regulate microcavity thickness by the color film thickness of control, because the color film of the pixel cell of different colours originally will form in different step, therefore their thickness can be controlled respectively easily, so array base palte preparation technology of the present utility model is simple, cost is low; In addition, because its thin-film transistor drives layer top and is provided with reflector and Organic Light Emitting Diode, so the thin-film transistor position also can be used for luminous on the one hand, the aperture opening ratio height, the luminous efficiency height, on the other hand, the reflector can stop light to be mapped on the thin-film transistor, thereby reduce its leakage current, make to show accurately.
Preferably, described luminescent layer is for being used for sending the luminescent layer of white light.
Further preferably, describedly comprise be used to the luminescent layer that sends white light: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
That is to say, luminescent layer can emit white light by using specific structure and known materials, for example wherein can be rubescent, green with being used for, the overlapping setting of electroluminescent organic material layer of blue three color light (also can adopt other color combination certainly), thereby the light that they are sent is mixed into white light; Perhaps also electroluminescent organic material rubescent, green, blue three color light can be mixed into an electroluminescent organic material layer, it is emitted white light.
Preferably, have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure.
" concaveconvex structure or wave structure " refers on the thickness direction in reflector, the height difference of reflecting surface diverse location, thus make the light that shines on the reflecting surface that diffuse reflection can take place; Concrete, it can be by the site form and is distributed in raised points or depression points on the reflecting surface, also can be the structure of the undulating movement of strip, as long as it can make reflecting surface uneven.
Owing to have concaveconvex structure or wave structure on the reflector, so light in microcavity diffuse reflection can take place, thereby the light amount of final ejaculation is increased, improve luminous efficiency, find that after deliberation this structure can improve luminous efficiency about 50%.
Further preferably, described array base palte also comprises: be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and the reflector.
Because the reflector is usually by the metal material manufacturing, there is not flowability, so therefore its configuration of surface can, can make the living corresponding concaveconvex structure of natural birth or wave structure on the reflector by concaveconvex structure or wave structure are set at resin bed along with the metamorphosis of square structure under it; Simultaneously, because the effect of resin bed, so the thin-film transistor of first electrode (anode) and its below drives the various electrodes in the layer, the parasitic capacitance between lead reduces, so luminous efficiency can obtain further raising.
Further preferably, be provided with via hole in the described resin bed, described first electrode drives layer by described via hole and thin-film transistor and is electrically connected, and the pixel that described via hole place is provided with the insulation between first electrode and luminescent layer limits layer.
Further preferably, the thickness of described resin bed 1000 ~
Between.
Preferably, described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell; Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, and source electrode connects data wire, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with first electrode of OLED.
Preferably, described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, and reflectivity is between 80 ~ 100%, thickness 100 ~
Between.
Preferably, described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
Preferably, be provided with via hole in the described color film, described second electrode is electrically connected by described via hole with the half-reflection and half-transmission layer, and described half-reflection and half-transmission layer is made of electric conducting material, and described via hole place is provided with the pixel restriction layer of the insulation between first electrode and luminescent layer.
That is to say that the half-reflection and half-transmission layer conducts electricity, and link to each other with second electrode, thereby can assist the conduction of second electrode, to reduce its resistance, prevent the driving inequality of thin-film transistor, improve luminous efficiency and display effect.
Preferably, described color film thickness 5000 ~
Between.
Preferably, described color film comprises: red color film, green tint film, blue color film; Or red color film, green tint film, blue color film, white color film; Or red color film, green tint film, blue color film, yellow color film.
That is to say that the color of the color film in each pixel cell of composition one " visible pixels " can have above multiple different mode; Certainly, if adopt other color mode, also be feasible.
Preferably, the described second transparent electrode is by any one formation in tin indium oxide, indium zinc oxide, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid), the carbon nano-tube.
Preferably, described first electrode is the negative electrode of Organic Light Emitting Diode, and described second electrode is the anode of Organic Light Emitting Diode; Or described first electrode anode that is Organic Light Emitting Diode, described second electrode is the negative electrode of Organic Light Emitting Diode.
Technical problem to be solved in the utility model also comprises, at the high problem of organic LED display device complicated process of preparation, cost with micro-cavity structure of the prior art, provide the organic LED display device that a kind of preparation technology is simple, cost is low.
The technical scheme that solution the utility model technical problem adopts is a kind of organic LED display device, and it comprises above-mentioned array base palte.
Has above-mentioned array base palte in the organic LED display device of the present utility model, so its preparation technology is simple, cost is low.
The utility model is specially adapted in white organic LED (WOLED) display unit.
Description of drawings
Fig. 1 is the part section structural representation of existing array base palte;
Fig. 2 is existing part section structural representation with array base palte of micro-cavity structure;
Fig. 3 is the part section structural representation of the array base palte of embodiment 1 of the present utility model;
Fig. 4 is the part section structural representation of the array base palte of embodiment 2 of the present utility model;
Fig. 5 is the equivalent circuit diagram of OLED driver circuit of the array base palte of embodiment 2 of the present utility model;
Fig. 6 forms the part section structural representation that thin-film transistor drives the array base palte behind the layer in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 7 is the part section structural representation that forms the array base palte behind the resin bed in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 8 is the part section structural representation that forms the array base palte behind first electrode (reflector) in the preparation process of array base palte of embodiment 2 of the present utility model;
Be formed with the part section structural representation of the array base palte behind the OLED in the preparation process of Fig. 9 for the array base palte of embodiment 2 of the present utility model;
Figure 10 is the part section structural representation that forms the array base palte behind the color film in the preparation process of array base palte of embodiment 2 of the present utility model.
Wherein Reference numeral is: 1, thin-film transistor drives layer; 111, switching thin-film transistor grid; 112, switching thin-film transistor source electrode; 113, switching thin-film transistor drain electrode; 114, switching thin-film transistor active area; 121, drive the film crystal tube grid; 122, drive the thin-film transistor source electrode; 123, drive the thin-film transistor drain electrode; 124, drive the thin-film transistor active area; 12, gate insulator; 13, spacer insulator layer; 14, passivation layer; 2, Organic Light Emitting Diode; 21, first electrode; 22, second electrode; 23, luminescent layer; 3, color film; 3R, red color film; 3G, green tint film; 3B, blue color film; 4, reflector; 5, resin bed; 6, half-reflection and half-transmission layer; 7, substrate; 8, confining bed; 9R, red pixel unit; 9G, green pixel unit; 9B, blue pixel unit; 91, pixel limits layer; DATA, data wire; SCAN, scan line; Vdd, power voltage line; Cs, storage capacitance.
Embodiment
For making those skilled in the art understand the technical solution of the utility model better, below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Embodiment 1:
As shown in Figure 1, present embodiment provides a kind of array base palte, and it comprises a plurality of pixel cells that are positioned on the substrate 7; And pixel cell comprises:
Thin-film transistor drives layer 1.
Than the half-reflection and half-transmission layer 6 of Organic Light Emitting Diode 2 further from substrate 7, itself and reflector 4 constitute micro-cavity structure.
Be arranged in 6 on Organic Light Emitting Diode 2 and half-reflection and half-transmission layer and be in the color film 3 of micro-cavity structure.
In the array base palte of present embodiment, color film 3 is among the micro-cavity structure, therefore can regulate microcavity thickness by color film 3 thickness of control, because the color film of the pixel cell of different colours originally will form in different step, therefore their thickness can be controlled respectively easily, so the array base palte preparation technology of present embodiment is simple, cost is low; In addition, because its thin-film transistor drives layer 1 top and is provided with reflector 4 and Organic Light Emitting Diode 2, so the thin-film transistor position also can be used for luminous on the one hand, the aperture opening ratio height, the luminous efficiency height, on the other hand, reflector 4 can stop light to be mapped on the thin-film transistor, thereby reduce its leakage current, make to show accurately.
Embodiment 2:
As Fig. 4, shown in Figure 5, present embodiment provides a kind of array base palte, and it comprises a plurality of pixel cells that are positioned on the substrate 7; Wherein, a plurality of adjacent pixel cells that have the color film 3 of different colours constitute " visible pixels " on the display.Wherein, the color of color film can be by multiple different pattern.Preferably, color film comprises red color film, green tint film, blue color film (RGB pattern); Or comprise red color film, green tint film, blue color film, white color film (RGBW pattern); Or comprise red color film, green tint film, blue color film, yellow color film (RGBY pattern).
As shown in Figure 4, on the direction away from substrate 7 gradually, array base palte comprises that successively thin-film transistor drives layer 1, resin bed 5, Organic Light Emitting Diode 2, color film 3, confining bed 8.
Wherein, it is for driving the luminous thin film transistor (TFT) array of Organic Light Emitting Diode 2 that thin-film transistor drives layer 1, and it mainly comprises structures such as thin-film transistor, scan line SCAN, data wire DATA, power voltage line Vdd, gate insulator 12, spacer insulator layer 13, passivation layer 14.
Wherein, each thin-film transistor is preferably metal oxide thin-film transistor, as zinc tin oxide (ZnSnO) thin-film transistor, indium gallium zinc oxide (IGZO) thin-film transistor etc., because advantage such as metal oxide thin-film transistor has simple in structure, easy preparation, mobility height, homogeneity be good.Certainly, also be feasible if use amorphous silicon film transistor, OTFT etc.
Preferably, a kind of structure of thin-film transistor driving layer 1 as shown in Figure 4, comprise many cluster films transistor, pixel cell of every cluster film transistor controls, and every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and two thin-film transistors have separately independently active area 114,124 respectively.Wherein, the grid 111 of switching thin-film transistor connects scan line SCAN, and source electrode 112 connects data wire DATA, and drain electrode 113 connects the grid 121 that drives thin-film transistor; And the source electrode 122 that drives thin-film transistor connects power voltage line Vdd, drain electrode 123 is connected with first electrode 21 (being anode) of OLED 2, and and 113 of the drain electrodes of switching thin-film transistor form storage capacitors Cs, thereby form equivalent electric circuit as shown in Figure 5.Wherein, separate by gate insulation layer 12 and spacer insulator layer 13 between each structure in the thin-film transistor driving layer 1, and separate by passivation layer 14 between other structures in thin-film transistor and the array base palte.
Certainly, above-described just thin-film transistor drives a kind of concrete structure of layer 1, and thin-film transistor drives layer 1 and also can be other different structure, as long as its Organic Light Emitting Diode 2 in can each pixel cell of drive.Because driving layer 1, thin-film transistor can adopt multiple different form known, so be not described in detail at this.
Preferably, the passivation layer 14 that drives layer 1 at thin-film transistor is provided with resin bed 5, and the upper surface of this resin bed 5 has concaveconvex structure or wave structure, and its thickness preferably 1000 ~
Between.
Preferably, reflector 4 (first electrode 21 or independent reflector 4) by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, reflectivity between 80 ~ 100%, thickness 100 ~
Between.
Owing to does not make by there being mobile material in reflector 4, so concaveconvex structure or the corresponding concaveconvex structure of wave structure or wave structure on its meeting nature formation and the resin bed 5, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it.
Wherein, be easy to realize at resin bed 5 formation concaveconvex structures or wave structure, therefore by resin bed 5 is set, can make the upper surface in reflector 4 form concaveconvex structure or wave structure (simultaneously, the layer of other in the Organic Light Emitting Diode 2 also can form concaveconvex structure or wave structure) easily.Certainly, concaveconvex structure on the reflector 4 or wave structure also can form by other means,, resin bed 5 drives passivation layer 14 formation concaveconvex structure or the wave structures of layer 1 as can not being set at thin-film transistor, form concaveconvex structure or wave structure thereby make on the reflector 4, perhaps also can be directly 4 form concaveconvex structure or wave structures in the reflector.Simultaneously, the thin-film transistor that resin bed 5 also can reduce first electrode 21 (anode) and its downside drives the various electrodes in the layer 1, the parasitic capacitance between lead, thereby further improves luminous efficiency.
Preferably, be provided with via hole in the resin bed 5, first electrode 21 is electrically connected (also respective openings should be arranged in the passivation layer 14 of thin-film transistor driving layer 1 certainly) by this via hole with the drain electrode that thin-film transistor drives the driving thin-film transistor in the layer 1; Simultaneously, be positioned at pixel restriction layer 91 (PDL, the Pixel Defining Layer) of the insulation of 23 of first electrode 21 and luminescent layers in addition at this via hole place.
The Organic Light Emitting Diode 2 of present embodiment and thin-film transistor drive 1 on layer and are provided with resin bed 5, are electrically connected so first electrode 21 need drive layer 1 by via hole and thin-film transistor.And crossing the hole site, reflector 4 there is no concaveconvex structure or wave structure, and the thickness of the direction of luminescent layer 23, micro-cavity structure etc. is all irregular, so this part is not useable for luminous (this part is not Organic Light Emitting Diode 2 in other words); Therefore, the pixel that insulation need be set limits layer 91 with the electric current of 23 of first electrode 21 of blocking this position and luminescent layers.Certainly, play the purpose (limiting the viewing area of pixel cell in other words) that stops Organic Light Emitting Diode 2 luminous as long as pixel limits layer 91, so it also can be other form, as can be between second electrode 22 and luminescent layer 23.
Certainly, first electrode 21 also can drive layer 1 with thin-film transistor in other way and be electrically connected, and for example can drive layer 1 by the position between each pixel cell and thin-film transistor and link to each other.
Preferably, transparent second electrode 22 by tin indium oxide (ITO), indium zinc oxide (IZO), poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT-PSS), any one formation in the carbon nano-tube (CNT).
Preferably, luminescent layer 23 is for being used for sending the luminescent layer 23 of white light; It can realize the function emit white light by different ways.Further preferred, the luminescent layer that sends white light comprises: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
Because the technology comparative maturity of white light OLED, therefore white light uses 23 the easiest demonstrations of luminescent layer that emit white light through can directly becoming the light of these coloured silk film 3 colors behind the color film 3 simultaneously.Certainly, if luminescent layer 23 sends is that coloured light also is feasible, as long as the color of each color film 3 of corresponding change guarantees finally can realize that demonstration gets final product.
Obviously, though be the anode of Organic Light Emitting Diode 2 with first electrode 21 in the present embodiment, second electrode 22 is the negative electrode of Organic Light Emitting Diode 2; If but be the negative electrode of Organic Light Emitting Diode 2 with first electrode 21, second electrode 22 also is feasible for the anode of Organic Light Emitting Diode 2.
Be provided with color film 3 at Organic Light Emitting Diode 2, color film 3 is used for filtering the light by it, the color film 3 color differences in each pixel cell, thus each pixel cell sends the light of different colours.Wherein, because color film 3 thickness are big and flowability is arranged before curing, so its upper surface can become horizontal plane usually substantially; Certainly, if color film 3 upper surfaces also are formed with concaveconvex structure or wave structure, also be feasible.
Preferably, the thickness of color film 3 5000 ~
Between; Why the thickness range of color film 3 is bigger, is because color film 3 is arranged in micro-cavity structure, therefore can control microcavity thickness by regulating color film 3 thickness, thereby makes the micro-cavity structure in each pixel cell strengthen the light identical with its color film 3 colors.
On color film 3, also be provided with half-reflection and half-transmission layer 6, this half-reflection and half-transmission layer 6 and reflector 4 (first electrode 21 or independent reflector 4) have constituted micro-cavity structure, the light that is sent by luminescent layer 23 can be at the two through repeatedly penetrating from half-reflection and half-transmission layer 6 after the reflection again, and because resonance effect makes the light (light identical with color film 3 colors of this pixel cell) of specific wavelength obtain to strengthen, to improve luminous efficiency; And because reflector 4 has concaveconvex structure or wave structure on having, when so light is mapped on it diffuse reflection can take place, can make luminous efficiency obtain further to improve like this, by analysis, the array base palte of the comparable no concave-convex structure of its luminous efficiency or wave structure improves about 50%.
Preferably, have via hole in the color film 3, second electrode 22 and the half-reflection and half-transmission layer that is made of electric conducting material 6 are electrically connected by via hole, and the pixel that the via hole place is provided with the insulation between first electrode 21 and luminescent layer 23 limits layer 91.
That is to say, preferably by the via hole on the color film 3 second electrode 22 is electrically connected with half-reflection and half-transmission layer 6, thereby make half-reflection and half-transmission layer 6 auxiliary second electrode, 22 conduction, to reduce its resistance, can prevent from driving inequality like this, improve luminous efficiency and display effect.And because this via hole place does not have color film 3, so can not therefore pixel need be set limit layer 91 for luminous.
Obviously, as preferred scheme, can make the via hole in resin bed 5 and the color film 3 be in same position, limit layer 91 as long as arrange one like this, simple in structure.
Certainly, second electrode 22 also can be electrically connected with half-reflection and half-transmission layer 6 in other way, for example can link to each other with half-reflection and half-transmission layer 6 by the position between each pixel cell.
Preferably, above-mentioned half-reflection and half-transmission layer 6 by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
Certainly, also can have other conventional structure in the array base palte of present embodiment, for example the edge at each pixel cell also can have pixel restriction layer 91 etc.
To shown in Figure 10, the preparation method of the array base palte of present embodiment can may further comprise the steps as Fig. 6:
S01, form the figure that thin-film transistors drive layer 1 at substrate 7, obtain structure as shown in Figure 6.Wherein, thin-film transistor drives in the layer 1 and comprises a plurality of layers of structure, and these layers structure can repeatedly form in the composition technology successively.Usually composition technology comprises the complete rete that first formation (by modes such as deposition, coating, sputters) is made of certain material, remove the part in this complete rete by photoetching process (generally including steps such as photoresist coating, exposure, development, etching, photoresist lift off) afterwards, make remainder form required figure.Because composition technology is known technology, and the structure of thin-film transistor driving layer 1 can be same as the prior art, so no longer its detailed process is described in detail at this.
S02, formation resin bed 5, and pass through printing technology or use the composition technology of duotone mask plate to form concaveconvex structure or wave structures at resin bed 5, (can be independent composition technology by composition technology, also can be the composition technology that forms concaveconvex structure or wave structure) form the via hole that is communicated with thin-film transistor driving layer 1 at resin bed 5, obtain structure as shown in Figure 7.Wherein, use the composition technology of duotone mask plate mainly to refer to utilize duotone mask plate (comprising intermediate tone mask plate and gray scale mask plate) to control the exposure of photoresist diverse location, make the part photoresist that the part exposure take place, thus after etch step in make the layer under it that partial etching take place, thereby produce surface relief structure or wave structure; Certainly, resin bed 5 also can form with the photosensitive resin material, and needing only in the composition technology so directly exposes, develops just can obtain as shown in Figure 7 structure, need not the operation relevant with photoresist.
S03, formation include the figure of OLED 2, and it comprises:
S031, form the figure (as shown in Figure 8) of reflective first electrode 21 (just the reflector 4) by composition technology; Or forming reflector 4 by composition technology earlier, composition technology forms the first transparent electrode 21 again.Wherein, owing to have concaveconvex structure or wave structure on the resin bed 5, so reflector 4 also forms concaveconvex structure or wave structure naturally, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it; Simultaneously, no matter adopt which kind of mode, first electrode 21 all drives layer 1 by the via hole on the resin bed and thin-film transistor and is electrically connected.
S032, the pixel that forms the insulation be positioned at the via hole top at least by composition technology limit the figure of layer 91.
S033, formation luminescent layer 23.
S034, the second transparent electrode 22 of formation obtain structure as shown in Figure 9.
S04, in each pixel, form the color film 3 of required color respectively by typography or composition technology, obtain the figure of color film 3, obtain structure as shown in figure 10.Wherein, preferably have via hole in the color film 3, thereby the half-reflection and half-transmission layer 6 that makes it back formation can be electrically connected with 22 formation of second electrode; And this via hole can directly form by only forming color film 3 in pixel restriction layer 91 periphery, also can be by the formation of composition technology.Preferably, the curing temperature of color film 3 is smaller or equal to 130 ℃, because this moment, luminescent layer 23 formed, too high temperature can be damaged luminescent layer 23, therefore needs the curing temperature of the color film 3 of control.
S04, formation half-reflection and half-transmission layer 6.
S05, formation confining bed 8 obtain array base palte as shown in Figure 4.The array base palte of this moment also can be used as organic LED display device, perhaps can be again to obtaining organic LED display device after the processing such as it encapsulates.
Embodiment 3:
Present embodiment provides a kind of organic LED display device, and it comprises above-mentioned array base palte.This display unit can comprise: any product or parts with Presentation Function such as oled panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
Has above-mentioned array base palte in the organic LED display device of present embodiment, so its preparation technology is simple, cost is low.
Certainly, also can have other conventional structure in the organic LED display device of present embodiment, as with array base palte to the closed substrate of box, power subsystem, display driver unit etc.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present utility model is described, yet the utility model is not limited thereto.For those skilled in the art, under the situation that does not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection range of the present utility model.
Claims (16)
1. an array base palte comprises a plurality of pixel cells that are positioned on the substrate, it is characterized in that described pixel cell comprises:
Thin-film transistor drives layer;
Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises first electrode, luminescent layer, transparent second electrode successively on away from the direction of substrate; Wherein, first electrode is the reflector, or first electrode is transparent and there is the reflector its below;
Than the half-reflection and half-transmission layer of described Organic Light Emitting Diode further from substrate, itself and described reflector constitute micro-cavity structure;
Be arranged in described Organic Light Emitting Diode and half-reflection and half-transmission interlayer and be in the color film of micro-cavity structure.
2. array base palte according to claim 1 is characterized in that,
Described luminescent layer is for being used for sending the luminescent layer of white light.
3. array base palte according to claim 2 is characterized in that, describedly comprises be used to the luminescent layer that sends white light:
The overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
4. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure.
5. array base palte according to claim 4 is characterized in that, also comprises:
Be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and the reflector.
6. array base palte according to claim 5 is characterized in that,
Be provided with via hole in the described resin bed, described first electrode drives layer by described via hole and thin-film transistor and is electrically connected, and the pixel that described via hole place is provided with the insulation between first electrode and luminescent layer limits layer.
7. array base palte according to claim 5 is characterized in that,
The thickness of described resin bed 1000 ~
Between.
8. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell;
Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, and source electrode connects data wire, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with first electrode of OLED.
9. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, and reflectivity is between 80 ~ 100%, thickness 100 ~
Between.
10. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy constitute, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
11. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Be provided with via hole in the described color film, described second electrode is electrically connected by described via hole with the half-reflection and half-transmission layer, and described half-reflection and half-transmission layer is made of electric conducting material, and described via hole place is provided with the pixel restriction layer of the insulation between first electrode and luminescent layer.
12. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Described color film thickness 5000 ~
Between.
13. according to any described array base palte in the claim 1 to 3, it is characterized in that described color film comprises:
Red color film, green tint film, blue color film;
Or
Red color film, green tint film, blue color film, white color film;
Or
Red color film, green tint film, blue color film, yellow color film.
14. according to any described array base palte in the claim 1 to 3,
The described second transparent electrode is by any one formation in tin indium oxide, indium zinc oxide, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid), the carbon nano-tube.
15. according to any described array base palte in the claim 1 to 3, it is characterized in that,
Described first electrode is the negative electrode of Organic Light Emitting Diode, and described second electrode is the anode of Organic Light Emitting Diode;
Or
Described first electrode is the anode of Organic Light Emitting Diode, and described second electrode is the negative electrode of Organic Light Emitting Diode.
16. an organic LED display device is characterized in that, comprising:
Any described array base palte in the claim 1 to 15.
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| CN 201220686669 CN203218266U (en) | 2012-12-12 | 2012-12-12 | Array substrate, organic light emitting diode display device |
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| CN 201220686669 CN203218266U (en) | 2012-12-12 | 2012-12-12 | Array substrate, organic light emitting diode display device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103000639A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light-emitting diode display device |
| CN103022048A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light emitting diode display device |
| CN103681769A (en) * | 2013-12-24 | 2014-03-26 | 京东方科技集团股份有限公司 | Display device, organic light-emitting device and manufacturing method of organic light-emitting device |
| WO2018152907A1 (en) * | 2017-02-27 | 2018-08-30 | 深圳市华星光电技术有限公司 | Micro light emitting diode array substrate, and display panel |
| WO2020015176A1 (en) * | 2018-07-17 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting display panel |
| US10763323B2 (en) | 2018-06-22 | 2020-09-01 | Apple Inc. | Power and data routing structures for organic light-emitting diode displays |
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- 2012-12-12 CN CN 201220686669 patent/CN203218266U/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103000639A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light-emitting diode display device |
| CN103022048A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light emitting diode display device |
| CN103000639B (en) * | 2012-12-12 | 2016-01-27 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, organic LED display device |
| US9401390B2 (en) | 2012-12-12 | 2016-07-26 | Boe Technology Group Co., Ltd. | Array substrate, method for fabricating the same, and OLED display device |
| CN103681769A (en) * | 2013-12-24 | 2014-03-26 | 京东方科技集团股份有限公司 | Display device, organic light-emitting device and manufacturing method of organic light-emitting device |
| CN103681769B (en) * | 2013-12-24 | 2016-06-08 | 京东方科技集团股份有限公司 | Display device, organic electroluminescence device and preparation method thereof |
| WO2018152907A1 (en) * | 2017-02-27 | 2018-08-30 | 深圳市华星光电技术有限公司 | Micro light emitting diode array substrate, and display panel |
| US10763323B2 (en) | 2018-06-22 | 2020-09-01 | Apple Inc. | Power and data routing structures for organic light-emitting diode displays |
| US11251259B2 (en) | 2018-06-22 | 2022-02-15 | Apple Inc. | Power and data routing structures for organic light-emitting diode displays |
| WO2020015176A1 (en) * | 2018-07-17 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting display panel |
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