CN203013729U - Array substrate and organic light emitting diode display device - Google Patents
Array substrate and organic light emitting diode display device Download PDFInfo
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- CN203013729U CN203013729U CN 201220689375 CN201220689375U CN203013729U CN 203013729 U CN203013729 U CN 203013729U CN 201220689375 CN201220689375 CN 201220689375 CN 201220689375 U CN201220689375 U CN 201220689375U CN 203013729 U CN203013729 U CN 203013729U
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Abstract
The utility model provides an array substrate and an organic light emitting diode display device, belonging to the technical field of organic light emitting diode display and solving the problem that existing organic light emitting diode display devices are not high enough in light emitting efficiency. Each of pixel units of the array substrate comprises a thin film transistor driving layer, an organic light emitting diode and a color film, wherein the distance between the organic light emitting diode and the substrate is larger than that between the thin film transistor driving layer and the substrate; the organic light emitting diode is driven by the thin film transistor driving layer and sequentially comprises a first electrode, a light emitting layer and a second electrode; the first electrode is a reflection layer or the first electrode is transparent, and the lower side of the first electrode is provided with the reflection layer; the second electrode is a half-reflection half-transparent layer or the second electrode is transparent, and an upper side of the second electrode is provided with the half-reflection half-transparent layer; a reflection surface of the reflection layer is provided with a concave-convex structure or a wave structure; the reflection layer and the half-reflection half-transparent layer form a micro-cavity structure; and the distance between the color film and the substrate than is larger than that between the organic light emitting diode and the substrate. The array substrate is particularly applicable to white organic light emitting diode display devices.
Description
Technical field
The utility model belongs to the organic light-emitting diode display technical field, is specifically related to a kind of array base palte, organic LED display device.
Background technology
Organic Light Emitting Diode (OLED, Organic Light Emitting Diode) is a kind of electroluminescent device of organic thin film, and it has, and preparation technology is simple, cost is low, luminous efficiency is high, easily form the advantages such as flexible structure.Therefore, utilize the Display Technique of Organic Light Emitting Diode to become a kind of important Display Technique.
Organic LED display device comprises a plurality of pixel cells, is provided with an Organic Light Emitting Diode in each pixel cell, can control their luminous intensity by the electric current of controlling each Organic Light Emitting Diode, thereby realizes showing.Wherein, each on display " visible pixels " is made of a plurality of adjacent and pixel cells that send different colours light, and the light that each pixel cell sends becomes the light that this " visible pixels " sent after mixing; The color (being the color of color film) that forms the pixel cell of " visible pixels " can have multiple different mode, such as RGB (RGB) pattern (i.e. red pixel unit, green pixel unit, yellow pixel unit composition one " visible pixels "), RGBW (red, green, blue and white) pattern, RGBY (red, green, blue and yellow) pattern etc.
Due to the technology comparative maturity of white organic LED (WOLED), luminous efficiency is high, so it is applied widely in organic LED display device.
As shown in Figure 1, one " visible pixels " of white organic LED display unit can comprise red, green, blue three pixel cell 9R, 9G, the 9B (certainly also can be other patterns) that is located on substrate 7, be provided with thin-film transistor (TFT) in each pixel cell 9R, 9G, 9B and drive layer 1, drive on layer 1 at thin-film transistor and be provided with successively anode (the first electrode 21), luminescent layer 23, negative electrode (the second electrode 22), confining bed 8 (Encapsulation), the color film 3R of respective color, 3G, 3B (claiming again colored filter).Wherein, anode, luminescent layer 23, negative electrode consist of Organic Light Emitting Diode 2, but thin-film transistor drives the anode of each pixel cell of layer 1 drive 9R, 9G, 9B, thereby make each Organic Light Emitting Diode 2 send the light of different brightness, become different colours after the corresponding color film 3R of these light processes, 3G, 3B, and be mixed into " visible pixels " issued light.
For improving luminous efficiency, can form microcavity (Micro Cavity) structure in organic LED display device.Micro-cavity structure refers to that the thickness that forms is the structure of micron dimension between a reflector and half anti-semi-permeable layer, light can constantly reflect at two interlayers, due to resonance effect, therefore finally the light of specific wavelength can be strengthened from the light that the half-reflection and half-transmission layer penetrates, and the wavelength that this is strengthened is relevant with microcavity thickness.
In the white organic LED display unit, the different pixels unit is be used to the light that sends different colours, therefore the microcavity at place, different pixels unit should be able to make different wave length (light identical with its color film color) obtain to strengthen, and namely the microcavity thickness at place, different pixels unit should be different.For reaching this purpose, can be as shown in Figure 2, take negative electrode as half-reflection and half-transmission layer 6, and anode is made as hyaline layer in the white organic LED display unit, and sets up reflector 4 below anode; Like this, as long as regulate the thickness that the thickness of each anode can be controlled the micro-cavity structure of respective pixel unit 9R, 9G, 9B.
The inventor finds that in prior art, there are the following problems at least: although micro-cavity structure has improved the luminous efficiency of array base palte, but, because the reflector in micro-cavity structure and half-reflection and half-transmission layer are the plane, the reflection that light carries out in microcavity is less, therefore its luminous efficiency is still not high enough.
The utility model content
Technical problem to be solved in the utility model comprises, for the array base palte luminous efficiency with micro-cavity structure of the prior art not high enough problem still, provides a kind of luminous efficiency high array base palte.
The technical scheme that solution the utility model technical problem adopts is a kind of array base palte, comprises a plurality of pixel cells that are positioned on substrate, and described pixel cell comprises: thin-film transistor drives layer; Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer formation micro-cavity structure; Than the color film of described Organic Light Emitting Diode further from substrate.
Wherein, " thin-film transistor drives layer " refers to that it comprises the sandwich constructions such as thin-film transistor, scan line, data wire, power voltage line, insulating barrier, passivation layer for the array architecture of thin film transistor that drives Organic Light Emitting Diode." Organic Light Emitting Diode " refers to by the first electrode, the second electrode and is clipped in the luminous structure of energy that two interelectrode luminescent layers consist of, may only have the second electrode and luminescent layer in the part position (as the position between each pixel cell) of substrate and nothing the first electrode (so the first electrode in each pixel cell is separate), the pixel that perhaps also can be provided with insulation between electrode and luminescent layer limits layer, these positions can not be luminous, therefore be not " Organic Light Emitting Diode "; Therefore, as long as the reflector is positioned at the position relative with " Organic Light Emitting Diode " with color film, and can there is no reflector and color film in the zone that does not consist of " Organic Light Emitting Diode "." luminescent layer " refers to can be under the function of current luminous structure, and it can be single layer structure, also can be comprised of a plurality of different layers; " luminescent layer " comprises an electroluminescent organic material layer (EML) at least, but it also can comprise: be positioned at electron transfer layer (ETL) and electron injecting layer (EIL) between electroluminescent organic material layer and cathode layer; Be positioned at other structures such as hole injection layer (HIL) between electroluminescent organic material layer and anode layer and hole transmission layer (HTL)." concaveconvex structure or wave structure " refers on the thickness direction in reflector, and the height of reflecting surface diverse location is different, thereby makes the light that shines on reflecting surface that diffuse reflection can occur; Concrete, it can be raised points or the depression points on reflecting surface by the site formal distribution, also can be the structure of the undulating movement of strip, as long as it can make reflecting surface uneven.
In array base palte of the present utility model, owing to having concaveconvex structure or wave structure on the reflector, therefore light in microcavity, diffuse reflection can occur, thereby the light amount of final ejaculation is increased, improve luminous efficiency, find after deliberation, this structure can improve luminous efficiency 50% left and right; In addition, because driving a layer top, its thin-film transistor is provided with reflector and Organic Light Emitting Diode, therefore the thin-film transistor position also can be used for luminous on the one hand, aperture opening ratio is high, luminous efficiency is high, and on the other hand, the reflector can stop light to be mapped on thin-film transistor, thereby reduce its leakage current, make to show accurately.
Preferably, described luminescent layer is for being used for sending the luminescent layer of white light.
Further preferably, described luminescent layer be used to sending white light comprises: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
That is to say, luminescent layer can emit white light by using specific structure and known materials, for example wherein can be rubescent, green with being used for, the overlapping setting of electroluminescent organic material layer of blue three color light (certainly also can adopt other color combination), thereby the light that they are sent is mixed into white light; Perhaps also electroluminescent organic material rubescent, green, blue three color light can be mixed into an electroluminescent organic material layer, it is emitted white light.
Preferably, described array base palte also comprises: be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and reflector.
Due to the reflector usually by the metal material manufacturing, there is no mobility, therefore its configuration of surface can be along with the metamorphosis of its rectangular structure, therefore, by making on the reflector natural birth give birth to corresponding concaveconvex structure or wave structure concaveconvex structure or wave structure are set on resin bed; Simultaneously, due to the effect of resin bed, therefore the thin-film transistor of the first electrode (anode) and its below drives the various electrodes in layer, the parasitic capacitance between wire reduces, so luminous efficiency can obtain further raising.
Further preferably, be provided with via hole in described resin bed, described the first electrode drives layer by described via hole and thin-film transistor and is electrically connected to, and described via hole place is provided with the pixel restriction layer of the insulation between the first electrode and luminescent layer.
Further preferably, the thickness of described resin bed 1000 ~
Between.
Preferably, described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell; Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, source electrode connection data line, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with the first electrode of OLED.
Preferably, described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and reflectivity is between 80 ~ 100%, thickness 100 ~
Between.
Preferably, described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
Preferably, described color film thickness 5000 ~
Between.
Preferably, described color film comprises: red color film, green tint film, blue color film; Or red color film, green tint film, blue color film, white color film; Or red color film, green tint film, blue color film, yellow color film.
That is to say, the color of the color film in each pixel cell of composition one " visible pixels " can have above multiple different mode; Certainly, if adopt other color mode, be also feasible.
Preferably, described the first electrode is the negative electrode of Organic Light Emitting Diode, and described the second electrode is the anode of Organic Light Emitting Diode; Or described the first electrode anode that is Organic Light Emitting Diode, described the second electrode is the negative electrode of Organic Light Emitting Diode.
Technical problem to be solved in the utility model also comprises, for the organic LED display device luminous efficiency with micro-cavity structure of the prior art not high enough problem still, provides a kind of luminous efficiency high organic LED display device.
The technical scheme that solution the utility model technical problem adopts is a kind of organic LED display device, and it comprises above-mentioned array base palte.
Has above-mentioned array base palte in organic LED display device of the present utility model, therefore its luminous efficiency has obtained further raising.
The utility model is specially adapted in white organic LED (WOLED) display unit.
Description of drawings
Fig. 1 is the part section structural representation of existing array base palte;
Fig. 2 is existing part section structural representation with array base palte of micro-cavity structure;
Fig. 3 is the part section structural representation of the array base palte of embodiment 2 of the present utility model;
Fig. 4 is the equivalent circuit diagram of OLED driver circuit of the array base palte of embodiment 2 of the present utility model;
Fig. 5 forms the part section structural representation that thin-film transistor drives the array base palte after layer in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 6 is the part section structural representation that forms the array base palte after resin bed in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 7 is the part section structural representation that forms the array base palte after the first electrode (reflector) in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 8 is the part section structural representation that is formed with the array base palte after OLED in the preparation process of array base palte of embodiment 2 of the present utility model;
Fig. 9 is the part section structural representation that forms the array base palte after color film in the preparation process of array base palte of embodiment 2 of the present utility model.
Wherein Reference numeral is: 1, thin-film transistor drives layer; 111, switching thin-film transistor grid; 112, switching thin-film transistor source electrode; 113, switching thin-film transistor drain electrode; 114, switching thin-film transistor active area; 121, drive the film crystal tube grid; 122, drive the thin-film transistor source electrode; 123, drive the thin-film transistor drain electrode; 124, drive the thin-film transistor active area; 12, gate insulator; 13, spacer insulator layer; 14, passivation layer; 2, Organic Light Emitting Diode; 21, the first electrode; 22, the second electrode; 23, luminescent layer; 3, color film; 3R, red color film; 3G, green tint film; 3B, blue color film; 4, reflector; 5, resin bed; 6, half-reflection and half-transmission layer; 7, substrate; 8, confining bed; 9R, red pixel unit; 9G, green pixel unit; 9B, blue pixel unit; 91, pixel limits layer; DATA, data wire; SCAN, scan line; Vdd, power voltage line; Cs, storage capacitance.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Embodiment 1:
The present embodiment provides a kind of array base palte, comprises a plurality of pixel cells that are positioned on substrate, and described pixel cell comprises:
Thin-film transistor drives layer.
Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer formation micro-cavity structure.
Than the color film of described Organic Light Emitting Diode further from substrate.
In the array base palte of the present embodiment, owing to having concaveconvex structure or wave structure on the reflector, therefore light in microcavity, diffuse reflection can occur, thereby the light amount of final ejaculation is increased, improve luminous efficiency, find after deliberation, this structure can improve luminous efficiency 50% left and right; In addition, because driving a layer top, its thin-film transistor is provided with reflector and Organic Light Emitting Diode, therefore the thin-film transistor position also can be used for luminous on the one hand, aperture opening ratio is high, luminous efficiency is high, and on the other hand, the reflector can stop light to be mapped on thin-film transistor, thereby reduce its leakage current, make to show accurately.
Embodiment 2:
As shown in Figure 3, Figure 4, the present embodiment provides a kind of array base palte, and it comprises a plurality of pixel cells that are positioned on substrate 7; Wherein, a plurality of adjacent pixel cells with the color film 3 of different colours consist of " visible pixels " on a display.Wherein, the color of color film can be by multiple different pattern.Preferably, color film comprises red color film, green tint film, blue color film (RGB pattern); Or comprise red color film, green tint film, blue color film, white color film (RGBW pattern); Or comprise red color film, green tint film, blue color film, yellow color film (RGBY pattern).
As shown in Figure 3, on the direction away from substrate 7 gradually, array base palte comprises that successively thin-film transistor drives layer 1, resin bed 5, Organic Light Emitting Diode 2, color film 3, confining bed 8.
Wherein, it is that it mainly comprises the structures such as thin-film transistor, scan line SCAN, data wire DATA, power voltage line Vdd, gate insulator 12, spacer insulator layer 13, passivation layer 14 for the luminous thin film transistor (TFT) array of driving Organic Light Emitting Diode 2 that thin-film transistor drives layer 1.
Wherein, each thin-film transistor is preferably metal oxide thin-film transistor, as zinc tin oxide (ZnSnO) thin-film transistor, indium gallium zinc oxide (IGZO) thin-film transistor etc., because metal oxide thin-film transistor has simple in structure, easy preparation, the advantage such as mobility is high, homogeneity is good.Certainly, be also feasible if use amorphous silicon film transistor, OTFT etc.
Preferably, a kind of structure of thin-film transistor driving layer 1 as shown in Figure 3, comprise many cluster films transistor, pixel cell of every cluster film transistor controls, and every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and two thin-film transistors have respectively separately independently active area 114,124.Wherein, the grid 111 of switching thin-film transistor connects scan line SCAN, source electrode 112 connection data line DATA, and drain electrode 113 connects the grid 121 that drives thin-film transistor; And the source electrode 122 that drives thin-film transistor connects power voltage line Vdd, drain electrode 123 is connected with first electrode 21 (being anode) of OLED 2, and and 113 of the drain electrodes of switching thin-film transistor form storage capacitors Cs, thereby form equivalent electric circuit as shown in Figure 4.Wherein, separate by gate insulation layer 12 and spacer insulator layer 13 between each structure in thin-film transistor driving layer 1, and separate by passivation layer 14 between other structures in thin-film transistor and array base palte.
Certainly, above-described just thin-film transistor drives a kind of concrete structure of layer 1, and thin-film transistor drives layer 1 and also can be other different structure, as long as its Organic Light Emitting Diode 2 in can each pixel cell of drive.Because driving layer 1, thin-film transistor can adopt multiple different form known, therefore be not described in detail at this.
Preferably, drive at thin-film transistor on the passivation layer 14 of layer 1 and be provided with resin bed 5, the upper surface of this resin bed 5 has concaveconvex structure or wave structure, and its thickness preferably 1000 ~
Between.
Preferably, reflector 4 (the first electrode 21 or independent reflector 4) by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, reflectivity between 80 ~ 100%, thickness 100 ~
Between.
Preferably, half-reflection and half-transmission layer 6 (the second electrode 21 or independent half-reflection and half-transmission layer 6) by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
Because reflector 4 is made by the material without mobility, therefore concaveconvex structure or the corresponding concaveconvex structure of wave structure or wave structure on its meeting self-assembling formation and resin bed 5, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it.
Wherein, formation concaveconvex structure or wave structure are easy to realize on resin bed 5, therefore by resin bed 5 is set, can make easily the upper surface in reflector 4 form concaveconvex structure or wave structure (simultaneously, the layer of other in Organic Light Emitting Diode 2 also can form concaveconvex structure or wave structure).Certainly, concaveconvex structure on reflector 4 or wave structure also can form by other means, as can not being set, resin bed 5 forms concaveconvex structure or wave structure on the passivation layer 14 of thin-film transistor driving layer 1, thereby make and form concaveconvex structure or wave structure on reflector 4, perhaps also can directly form concaveconvex structure or wave structure on reflector 4.Simultaneously, the thin-film transistor that resin bed 5 also can reduce the first electrode 21 (anode) and its downside drives the various electrodes in layer 1, the parasitic capacitance between wire, thereby further improves luminous efficiency.
Half-reflection and half-transmission layer 6 and reflector 4 have consisted of micro-cavity structure, the light that is sent by luminescent layer 23 can be through penetrating from half-reflection and half-transmission layer 6 after Multi reflection between both again, and obtain to strengthen because resonance effect makes the light (light identical with color film 3 colors of this pixel cell) of specific wavelength, to improve luminous efficiency; The light wavelength that wherein will strengthen is determined by the thickness of microcavity, and the thickness of microcavity can be by the thickness adjustment of luminescent layer 23 grades in the pixel cell of controlling different colours.Because reflector 4 has above-mentioned concaveconvex structure or wave structure (in fact also can have on half-reflection and half-transmission layer 6), when therefore light is mapped on it, diffuse reflection can occur, can make like this luminous efficiency obtain further to improve, by analysis, the array base palte of the comparable no concave-convex structure of its luminous efficiency or wave structure improves 50% left and right.
Preferably, be provided with via hole in resin bed 5, the first electrode 21 is electrically connected to (certainly also respective openings should be arranged in the passivation layer 14 of thin-film transistor driving layer 1) by this via hole with the drain electrode that thin-film transistor drives the driving thin-film transistor in layer 1; Simultaneously, the pixel that is positioned in addition the insulation of 23 of the first electrode 21 and luminescent layers at this via hole place limits layer 91 (PDL, a Pixel Defining Layer).
The Organic Light Emitting Diode 2 of the present embodiment and thin-film transistor drive 1, layer and are provided with resin bed 5, are electrically connected to therefore the first electrode 21 need to drive layer 1 by via hole and thin-film transistor.And crossing the hole site, reflector 4 there is no concaveconvex structure or wave structure, and the thickness of the direction of luminescent layer 23, micro-cavity structure etc. is all irregular, therefore this part is not useable for luminous (this part is not Organic Light Emitting Diode 2 in other words); The pixel that therefore, insulation need to be set limits layer 91 with the electric current of 23 of the first electrode 21 of blocking this position and luminescent layers.Certainly, play and stop the luminous purpose (limiting in other words the viewing area of pixel cell) of Organic Light Emitting Diode 2 as long as pixel limits layer 91, so it also can be other form, as can be between the second electrode 22 and luminescent layer 23.
Certainly, the first electrode 21 also can drive layer 1 with thin-film transistor in other way and be electrically connected to, and for example can drive layer 1 by the position between each pixel cell and thin-film transistor and be connected.
Preferably, luminescent layer 23 is for being used for sending the luminescent layer 23 of white light; It can realize the function that emits white light by multiple different mode.Further preferred, the luminescent layer that sends white light comprises: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
Due to the technology comparative maturity of white light OLED, white light through can directly becoming the light of these coloured silk film 3 colors after color film 3, therefore the most easily shows with the luminescent layer 23 that emits white light simultaneously.Certainly, if luminescent layer 23 sends is that coloured light is also feasible, as long as the color of each color film 3 of corresponding change guarantees finally can realize that demonstration gets final product.
Obviously, although the anode take the first electrode 21 as Organic Light Emitting Diode 2 in the present embodiment, the second electrode 22 is the negative electrode of Organic Light Emitting Diode 2; If but the negative electrode take the first electrode 21 as Organic Light Emitting Diode 2, the second electrode 22 is also feasible for the anode of Organic Light Emitting Diode 2.
Be provided with color film 3 on Organic Light Emitting Diode 2, color film 3 is used for filtering the light by it, and color film 3 colors in each pixel cell are different, thereby each pixel cell sends the light of different colours.Wherein, large and mobility is arranged before curing due to color film 3 thickness, therefore its upper surface can become horizontal plane usually substantially.
Certainly, also can have other conventional structure in the array base palte of the present embodiment, also can have pixel such as the edge at each pixel cell and limit layer 91 etc.
To shown in Figure 9, the preparation method of the array base palte of the present embodiment can comprise the following steps as Fig. 5:
S01, form the figure that thin-film transistor drives layer 1 on substrate 7, obtain structure as shown in Figure 5.Wherein, thin-film transistor drives layer 1 and comprises a plurality of layers of structure, and these layers structure can repeatedly form in composition technique successively.Usually composition technique comprises the complete rete that first formation (by modes such as deposition, coating, sputters) is made of certain material, remove the part in this complete rete by photoetching process (generally including the steps such as photoresist coating, exposure, development, etching, photoresist lift off) afterwards, make remainder form required figure.Because composition technique is known technique, and the structure of thin-film transistor driving layer 1 can be same as the prior art, therefore no longer its detailed process is described in detail at this.
S02, formation resin bed 5, and form concaveconvex structure or wave structure by the composition technique of printing technology or use duotone mask plate on resin bed 5, (can be independent composition technique by composition technique, also can be the composition technique that forms concaveconvex structure or wave structure) form the via hole that is communicated with thin-film transistor driving layer 1 on resin bed 5, obtain structure as shown in Figure 6.Wherein, use the composition technique of duotone mask plate mainly to refer to utilize duotone mask plate (comprising intermediate tone mask plate and gray scale mask plate) to control the exposure of photoresist diverse location, make the part photoresist that the part exposure occur, thus after etch step in make the layer under it that partial etching occur, thereby produce surface relief structure or wave structure; Certainly, resin bed 5 also can form with the photosensitive resin material, and needing only in composition technique so directly exposes, develops just can obtain as shown in Figure 6 structure, need not the operation relevant to photoresist.
S03, formation include the figure of OLED 2, and it comprises:
S031, form the figure (as shown in Figure 7) of reflective the first electrode 21 (namely the reflector 4) by composition technique; Or first form reflector 4 by composition technique, then composition technique forms the first transparent electrode 21.Wherein, owing to having concaveconvex structure or wave structure on resin bed 5, therefore reflector 4 also self-assembling formation concaveconvex structure or wave structure, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it; Simultaneously, no matter adopt which kind of mode, the first electrode 21 all drives layer 1 by the via hole on resin bed and thin-film transistor and is electrically connected to.
S032, the pixel that forms the insulation be positioned at least the via hole top by composition technique limit the figure of layer 91.
S033, formation luminescent layer 23.
Second electrode 22 (namely the half-reflection and half-transmission layer 6) of S034, formation half-reflection and half-transmission obtains structure as shown in Figure 8; Or, first form the second transparent electrode 22 and form again half-reflection and half-transmission layer 6.
S04, form respectively the color film 3 of required color by typography or composition technique in each pixel, obtain the figure of color film 3, obtain structure as shown in Figure 9.Preferably, the curing temperature of color film 3 is less than or equal to 130 ℃, because this moment, luminescent layer 23 formed, too high temperature can be damaged luminescent layer 23, therefore needs to control the curing temperature of color film 3.
S05, formation confining bed 8 obtain array base palte as shown in Figure 3.The array base palte of this moment also can be used as organic LED display device, perhaps can be again to obtaining organic LED display device after the processing such as it encapsulates.
Embodiment 3:
The present embodiment provides a kind of organic LED display device, and it comprises above-mentioned array base palte.This display unit can comprise: any product or parts with Presentation Function such as oled panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
Has above-mentioned array base palte in the organic LED display device of the present embodiment, therefore its luminous efficiency has obtained further raising.
Certainly, also can have other conventional structure in the organic LED display device of the present embodiment, as with array base palte to the closed substrate of box, power subsystem, display driver unit etc.
Be understandable that, above execution mode is only the illustrative embodiments that adopts for principle of the present utility model is described, yet the utility model is not limited to this.For those skilled in the art, in the situation that do not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection range of the present utility model.
Claims (13)
1. an array base palte, comprise a plurality of pixel cells that are positioned on substrate, it is characterized in that, described pixel cell comprises:
Thin-film transistor drives layer;
Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer formation micro-cavity structure;
Than the color film of described Organic Light Emitting Diode further from substrate.
2. array base palte according to claim 1, is characterized in that,
Described luminescent layer is for being used for sending the luminescent layer of white light.
3. array base palte according to claim 2, is characterized in that, described luminescent layer be used to sending white light comprises:
The overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting.
4. array base palte according to claim 3, is characterized in that, also comprises:
Be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and reflector.
5. array base palte according to claim 4, is characterized in that,
Be provided with via hole in described resin bed, described the first electrode drives layer by described via hole and thin-film transistor and is electrically connected to, and described via hole place is provided with the pixel restriction layer of the insulation between the first electrode and luminescent layer.
6. array base palte according to claim 4, is characterized in that,
The thickness of described resin bed 1000 ~
Between.
7. the described array base palte of any one according to claim 1 to 3, is characterized in that,
Described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell;
Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, source electrode connection data line, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with the first electrode of OLED.
8. the described array base palte of any one according to claim 1 to 3, is characterized in that,
Described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and reflectivity is between 80 ~ 100%, thickness 100 ~
Between.
9. the described array base palte of any one according to claim 1 to 3, is characterized in that,
Described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness 10 ~
Between.
10. the described array base palte of any one according to claim 1 to 3, is characterized in that,
Described color film thickness 5000 ~
Between.
11. according to claim 1 to 3, the described array base palte of any one, is characterized in that, described color film comprises:
Red color film, green tint film, blue color film;
Or
Red color film, green tint film, blue color film, white color film;
Or
Red color film, green tint film, blue color film, yellow color film.
12. according to claim 1 to 3, the described array base palte of any one, is characterized in that,
Described the first electrode is the negative electrode of Organic Light Emitting Diode, and described the second electrode is the anode of Organic Light Emitting Diode;
Or
Described the first electrode is the anode of Organic Light Emitting Diode, and described the second electrode is the negative electrode of Organic Light Emitting Diode.
13. an organic LED display device is characterized in that, comprising:
The described array base palte of any one in claim 1 to 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220689375 CN203013729U (en) | 2012-12-12 | 2012-12-12 | Array substrate and organic light emitting diode display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220689375 CN203013729U (en) | 2012-12-12 | 2012-12-12 | Array substrate and organic light emitting diode display device |
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| CN203013729U true CN203013729U (en) | 2013-06-19 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220689375 Expired - Lifetime CN203013729U (en) | 2012-12-12 | 2012-12-12 | Array substrate and organic light emitting diode display device |
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| CN (1) | CN203013729U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979367A (en) * | 2015-06-17 | 2015-10-14 | 京东方科技集团股份有限公司 | Detector backplane, manufacturing method therefor, X-ray flat panel detector and image pickup system |
| CN105097842A (en) * | 2015-08-11 | 2015-11-25 | 京东方科技集团股份有限公司 | Active matrix organic light emitting diode array substrate, manufacturing method and display device |
| WO2023245599A1 (en) * | 2022-06-24 | 2023-12-28 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
-
2012
- 2012-12-12 CN CN 201220689375 patent/CN203013729U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979367A (en) * | 2015-06-17 | 2015-10-14 | 京东方科技集团股份有限公司 | Detector backplane, manufacturing method therefor, X-ray flat panel detector and image pickup system |
| CN105097842A (en) * | 2015-08-11 | 2015-11-25 | 京东方科技集团股份有限公司 | Active matrix organic light emitting diode array substrate, manufacturing method and display device |
| US10043710B2 (en) | 2015-08-11 | 2018-08-07 | Boe Technology Group Co., Ltd. | Active matrix organic light emitting diode array substrate, fabricating method, and display apparatus |
| WO2023245599A1 (en) * | 2022-06-24 | 2023-12-28 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
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