CN110071120A - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN110071120A CN110071120A CN201910302101.7A CN201910302101A CN110071120A CN 110071120 A CN110071120 A CN 110071120A CN 201910302101 A CN201910302101 A CN 201910302101A CN 110071120 A CN110071120 A CN 110071120A
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- 239000010410 layer Substances 0.000 claims abstract description 76
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 37
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The embodiment of the invention discloses a kind of display panel and display devices.The display panel includes: data line, scan line and driving current line, and institute determines pixel region in ceiling substrate according to line, scan line and driving current line；Anode is formed in pixel region；Pixel defining layer defines the light emitting region of display panel；Organic planarization layer is formed in below pixel defining layer and anode；Inorganic protective layer is formed in below organic planarization layer；And cathode, it is formed in above light emitting region；The depressed area of different height is provided in organic planarization layer, so that the light emitting region above organic planarization layer forms corresponding depressed area.The embodiment of the present invention can increase display panel light emitting region area, compared with prior art in the case where display generates identical brightness, since display panel light emitting region area increases, therefore lesser current density driving, which can be used, can reach required brightness, and then can effectively promote the service life of display panel and display device.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of display panel and display device.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display is aobvious for a kind of self-luminous
Show device, do not need to generally require backlight module as liquid crystal display (Liquid Crystal Display, LCD), have it is light,
The advantages that thin, high reaction speed, high comparison of light and shade, low energy consumption, the mainstream of high-order product has been increasingly becoming it.If Fig. 1 is one
The schematic diagram of OLED display dot structure, the area of dot structure are X*Y, wherein including R, tri- sub-pixels of G, B, R, G, B
The light emitting region of sub-pixel is by pixel defining layer (Pixel Define Layer, PDL) Lai Dingyi, the luminous opening of R sub-pixel
The rest may be inferred for the luminous aperture opening ratio of rate=(Xr ' * Yr ')/(Xr*Y) * 100%, G, B sub-pixel.OLED display is remaining certain
Brightness case under, the aperture opening ratio size that shines will have a direct impact on service life of OLED device, and shine bigger, the required driving of aperture opening ratio
Current density is smaller, then the service life of OLED device is then longer, but by thin film transistor (TFT) (Thin-film transistor,
TFT) material and technology of backboard and OLED limit, and luminous aperture opening ratio is typically maintained between 20%~70%, and shine opening
Rate understands foundation monitor resolution difference and difference.
As shown in Fig. 2, the backboard process of OLED display will use inorganic protective layer after TFT formation above it
(PV) protect TFT device, and formed above the inorganic protective layer (PV) organic planarization layer (Planarization layer,
PLN), make the anode of OLED device again later, finally determined using pixel defining layer (pixel define layer, PDL)
The light emitting region of adopted OLED, but it is constrained to the material of backboard and OLED, technique limitation, PDL can only be limited to a certain specific
In region, that is, the top view projected area of PDL will have a design maximum value, therefore the device lifetime of OLED will also be limited
System.
Summary of the invention
The embodiment of the present invention provides a kind of display panel and display device, can increase whole display panel light emitting region
Area, compared with prior art in the case where display generates identical brightness, since display panel light emitting region area increases
Add, therefore lesser current density driving can be used and can reach required brightness, and then can effectively promote display panel
And the service life of display device.
To solve the above problems, the display panel includes: in a first aspect, the application provides a kind of display panel
Data line, scan line and driving current line, the data line, scan line and driving current line determine picture in ceiling substrate
Plain region；
Anode is formed in the pixel region；
Pixel defining layer, the pixel defining layer define the light emitting region of the display panel；
Organic planarization layer is formed in below the pixel defining layer and the anode；
Inorganic protective layer is formed in below the organic planarization layer；And
Cathode is formed in above the light emitting region；
The depressed area of different height is provided in the organic planarization layer, so that shining above the organic planarization layer
Region forms corresponding depressed area.
Further, via area, the organic planarization are provided on the organic planarization layer and the inorganic protective layer
Via area on layer connects the via area on the inorganic protective layer.
Further, it is provided with the depressed area of different height on the inorganic protective layer, is set below the organic planarization layer
It is equipped with the protrusion of different height, the protrusion below the organic planarization layer and the depressed area one on the inorganic protective layer are a pair of
It answers.
Further, the depressed area depth of the organic planarization layer is less than the thickness of organic planarization layer.
Further, the ramp angles of the depressed area of the organic planarization layer are between 20 °~60 °.
Further, each pixel region includes multiple subpixel areas, the light emitting region in a subpixel area
With one or more depressed areas corresponding with the depressed area of the organic planarization layer.
Further, the display panel further include:
The switching thin-film transistor being connect in the pixel region with the data line and the scan line；And with institute
State the driving thin film transistor (TFT) that switching thin-film transistor is connected with the driving current line.
Further, the grid of one of the drain electrode of the switching thin-film transistor and source electrode and the driving thin film transistor (TFT)
Connection and one of the drain electrode of the driving thin film transistor (TFT) and source electrode are connect with the anode.
Further, the display panel further include:
Storage capacitors are formed between the grid and the anode of the driving thin film transistor (TFT).
Second aspect, the application provide a kind of display device, including the display panel as described in any one of first aspect.
The depressed area of different height is provided in the organic planarization layer of display panel of the embodiment of the present invention, so that described have
Light emitting region above machine flatness layer forms corresponding depressed area, and the side slope that light emitting region forms corresponding depressed area is same
It will form light emitting region, therefore whole display panel light emitting region area can be increased, compared with prior art in display
In the case where generating identical brightness, since display panel light emitting region area increases, therefore it is close that lesser electric current can be used
Degree driving can reach required brightness, and then can effectively promote the service life of display panel and display device.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is that the embodiment of the present invention provides the schematic diagram of OLED display dot structure；
Fig. 2 is the sectional view of the TFT backplate of general traditional OLED displays；
Fig. 3 is that the embodiment of the present invention provides a kind of one embodiment structural schematic diagram of display panel.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
The instruction such as " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside"
Orientation or positional relationship be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention and simplification retouch
It states, rather than the device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation,
Therefore it is not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only, and cannot understand
For indication or suggestion relative importance or implicitly indicate the quantity of indicated technical characteristic.Define as a result, " first ",
The feature of " second " can explicitly or implicitly include one or more feature.In the description of the present invention, " more
It is a " it is meant that two or more, unless otherwise specifically defined.
In this application, " exemplary " word is used to indicate " being used as example, illustration or explanation ".Described herein as
Any embodiment of " exemplary " is not necessarily to be construed as or more advantage more more preferable than other embodiments.In order to appoint this field
What technical staff can be realized and use the present invention, gives and is described below.In the following description, it arranges for purposes of explanation
Details is gone out.It should be appreciated that those skilled in the art will realize that the case where not using these specific details
Under the present invention also may be implemented.In other examples, well known structure and process will not be described in detail, to avoid need not
The details wanted makes description of the invention become obscure.Therefore, the present invention be not intended to be limited to shown in embodiment, but with meet
The widest scope of principle and feature disclosed in the present application is consistent.
The embodiment of the present invention provides a kind of display panel and display device, is described in detail separately below.
Firstly, providing a kind of display panel in the embodiment of the present invention, which includes: data line, scan line and drive
Streaming current line, the data line, scan line and driving current line determine pixel region in ceiling substrate；Anode is formed in the picture
In plain region；Pixel defining layer, the pixel defining layer define the light emitting region of the display panel；Organic planarization layer is formed
Below the pixel defining layer and the anode；Inorganic protective layer is formed in below the organic planarization layer；And cathode,
It is formed in above the light emitting region；The depressed area of different height is provided in the organic planarization layer, so that described organic
Light emitting region above flatness layer forms corresponding depressed area.
As shown in figure 3, for one embodiment schematic diagram of display panel in the embodiment of the present invention, which includes:
Data line, scan line and driving current line, the data line, scan line and driving current line determine picture in ceiling substrate
Plain region；
Anode 301 is formed in the pixel region；
Pixel defining layer 302, the pixel defining layer define the light emitting region of the display panel；
Organic planarization layer 303 is formed in below the pixel defining layer and the anode；
Inorganic protective layer 304 is formed in below the organic planarization layer；And
Cathode 305 is formed in above the light emitting region；
The depressed area of different height is provided in the organic planarization layer 303, so that 303 top of the organic planarization layer
Light emitting region 306 form corresponding depressed area 307.
The depressed area of different height is provided in the organic planarization layer 303 of display panel of the embodiment of the present invention, so that institute
The light emitting region for stating 303 top of organic planarization layer forms corresponding depressed area, and light emitting region 306 forms the side of corresponding depressed area
Side slope equally will form light emitting region, therefore can increase whole display panel light emitting region area, with prior art phase
Than display generate identical brightness in the case where, due to display panel light emitting region area increase, therefore can be used compared with
Small current density driving can reach required brightness, and then can effectively promote the use longevity of display panel and display device
Life.
In some embodiment of the invention, it was provided on the organic planarization layer 303 and the inorganic protective layer 304
Porose area, the via area in the organic planarization layer 303 connect the via area on the inorganic protective layer.Further, the nothing
It is provided with the depressed area of different height on machine protective layer 304, is provided with the convex of different height below the organic planarization layer 303
It rises, the protrusion of 303 lower section of organic planarization layer is corresponded with the depressed area on the inorganic protective layer 304.
As shown in figure 3, in embodiments of the present invention, the display panel can also include: in the pixel region with
The switching thin-film transistor that the data line is connected with the scan line；And with the switching thin-film transistor (switch
TFT) state driving current line connection driving thin film transistor (TFT) (Driving TFT) further, the switching thin-film transistor
One of drain/source (S/D) connect with the grid of the driving thin film transistor (TFT) and the leakage for driving thin film transistor (TFT)
One of pole and source electrode are connect with the anode.The display panel can be with: storage capacitors (Cst), and it is thin to be formed in the driving
Between the grid of film transistor and the anode.The via hole of the via area connection lower section inorganic protective layer of the organic planarization layer,
And through the anode and lower section source electrode or drain metal electrical connection of display panel.
Further, the depressed area depth of the organic planarization layer 303 is less than the thickness of organic planarization layer, organic to guarantee
The function of flatness layer 303 can be realized using organic planarization layer 303 and reduce the area of black matrix (blackmatrix), increase
The aperture opening ratio of panel, the transmitance for increasing light, the purpose for reducing product power consumption.
In addition, the luminous intensity due to art OLED in existing skill has stronger smooth directive property, especially top-illuminating OLED
Device architecture directive property it is stronger, lead to luminance viewing angle and the poor disadvantage in coloration visual angle.For OLED display panel, compared to
The depressed area ramp angles of the prior art, the organic planarization layer 303 in the application can penetrate yellow light (photolithograph)
Technique adjusts, and the direction that light is drawn at slope is from the light lead direction at horizontal flat different, therefore can be by designing tiltedly
The depth of the depressed area of angle of slope and organic planarization layer so that the light emitting region of the top of organic planarization layer 303 formed it is corresponding
Depressed area, increase light emitting region area, and then improves the luminance viewing angle of display and coloration visual angle, in the embodiment of the present invention,
The ramp angles of the depressed area of the organic planarization layer 303 can be set at 15 °~75 °.Further, the organic planarization layer
The ramp angles of 303 depressed area are preferably between 20 °~60 °.
Further, each pixel region includes multiple subpixel areas, the light emitting region in a subpixel area
With one or more depressed areas corresponding with the depressed area of the organic planarization layer 303.
It should be noted that only describing above structure in above-mentioned display panel embodiment, it is to be understood that in addition to upper
It states except structure, can also as needed include any other necessary structure, such as base in display panel of the embodiment of the present invention
Plate, buffer layer, interlayer dielectric layer (ILD) etc., this is not limited here.
In order to more preferably implement display panel in the embodiment of the present invention, on display panel basis, in the embodiment of the present invention
A kind of display device is also provided, the display device includes the display as described in any embodiment in above-mentioned display panel embodiment
Panel.
By using display panel described in embodiment as above, the performance of the display device is further improved.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, it may refer to the detailed description above with respect to other embodiments, details are not described herein again.
It is provided for the embodiments of the invention a kind of display panel above and display device is described in detail, herein
Apply that a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help
Understand method and its core concept of the invention；Meanwhile for those skilled in the art, according to the thought of the present invention, having
There will be changes in body embodiment and application range, in conclusion the content of the present specification should not be construed as to the present invention
Limitation.
Claims (10)
1. a kind of display panel, which is characterized in that the display panel includes:
Data line, scan line and driving current line, the data line, scan line and driving current line determine pixel region in ceiling substrate
Domain；
Anode is formed in the pixel region；
Pixel defining layer, the pixel defining layer define the light emitting region of the display panel；
Organic planarization layer is formed in below the pixel defining layer and the anode；
Inorganic protective layer is formed in below the organic planarization layer；And
Cathode is formed in above the light emitting region；
The depressed area of different height is provided in the organic planarization layer, so that the light emitting region above the organic planarization layer
Form corresponding depressed area.
2. display panel according to claim 1, which is characterized in that in the organic planarization layer and the inorganic protective layer
It is provided with via area, the via area in the organic planarization layer connects the via area on the inorganic protective layer.
3. display panel according to claim 1, which is characterized in that be provided with different height on the inorganic protective layer
Depressed area is provided with the protrusion of different height below the organic planarization layer, the protrusion below the organic planarization layer with it is described
Depressed area on inorganic protective layer corresponds.
4. display panel according to claim 1, which is characterized in that the depressed area depth of the organic planarization layer, which is less than, to be had
The thickness of machine flatness layer.
5. display panel according to claim 1, which is characterized in that the ramp angles of the depressed area of the organic planarization layer
Between 20 °~60 °.
6. display panel according to claim 1, which is characterized in that each pixel region includes multiple subpixel areas,
Light emitting region in a subpixel area has one or more recess corresponding with the depressed area of the organic planarization layer
Area.
7. display panel according to claim 1, which is characterized in that the display panel further include:
The switching thin-film transistor being connect in the pixel region with the data line and the scan line；And it is opened with described
Close the driving thin film transistor (TFT) that thin film transistor (TFT) is connected with the driving current line.
8. display panel according to claim 1, which is characterized in that the drain electrode of the switching thin-film transistor and source electrode it
One connect with the grid of the driving thin film transistor (TFT) and the drain electrode for driving thin film transistor (TFT) and one of source electrode with it is described
Anode connection.
9. display panel according to claim 1, which is characterized in that the display panel further include:
Storage capacitors are formed between the grid and the anode of the driving thin film transistor (TFT).
10. a kind of display device, which is characterized in that including display panel as claimed in any one of claims 1-9 wherein.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910302101.7A CN110071120A (en) | 2019-04-16 | 2019-04-16 | Display panel and display device |
| PCT/CN2019/104821 WO2020211265A1 (en) | 2019-04-16 | 2019-09-09 | Display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910302101.7A CN110071120A (en) | 2019-04-16 | 2019-04-16 | Display panel and display device |
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| Publication Number | Publication Date |
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| CN110071120A true CN110071120A (en) | 2019-07-30 |
Family
ID=67367764
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|---|---|---|---|
| CN201910302101.7A Pending CN110071120A (en) | 2019-04-16 | 2019-04-16 | Display panel and display device |
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| CN (1) | CN110071120A (en) |
| WO (1) | WO2020211265A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312783A (en) * | 2020-02-27 | 2020-06-19 | 维沃移动通信有限公司 | Display module and electronic equipment |
| WO2020211265A1 (en) * | 2019-04-16 | 2020-10-22 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
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Also Published As
| Publication number | Publication date |
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| WO2020211265A1 (en) | 2020-10-22 |
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