CN103928626A - Oled light-emitting device and manufacturing method thereof - Google Patents
Oled light-emitting device and manufacturing method thereof Download PDFInfo
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- CN103928626A CN103928626A CN201410155846.2A CN201410155846A CN103928626A CN 103928626 A CN103928626 A CN 103928626A CN 201410155846 A CN201410155846 A CN 201410155846A CN 103928626 A CN103928626 A CN 103928626A
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- BLFVVZKSHYCRDR-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-2-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-2-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C=CC=CC2=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 BLFVVZKSHYCRDR-UHFFFAOYSA-N 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
- F21Y2115/15—Organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an OLED light-emitting device and a manufacturing method of the OLED light-emitting device. The OLED light-emitting device comprises a substrate, a planarization layer and a plurality of light-emitting units, wherein the planarization layer is located on the substrate and provided with a plurality of bending parts which are arranged at intervals; the light-emitting units are located on the planarization layer, and each light-emitting unit is located on the corresponding bending part and has a shape corresponding to that of the bending part. Each light-emitting unit comprises a first electrode, a light-emitting structure located on the first electrode and a second electrode located on the light-emitting structure. A cross section of each bending part has an arc-shaped outline as a whole. According to the OLED light-emitting device and the manufacturing method of the OLED light-emitting device, by arranging the bending parts in the contact positions of the light-emitting units and the planarization layer, the planar planes of the light-emitting units are turned into bending surfaces, the aperture rate of organic light-emitting diodes is substantially increased, light-emitting area is enlarged, and thus the luminance of the OLEDs is improved, power consumption is reduced, and the service life of the product is prolonged.
Description
Technical field
The disclosure relates to a kind of light-emitting device, particularly a kind of OLED light-emitting device and manufacture method thereof.
Background technology
OLED (Organic Light Emitting Diode Organic Light Emitting Diode) is Organnic electroluminescent device, it is by being clipped in luminous organic material between transparent anode and metallic reflection negative electrode, organic film is applied to voltage and carry out luminously, both can also can be used as lighting device as display unit.
The luminescence unit of OLED is mainly comprised of metallic cathode, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection layer and transparent anode.Because OLED light-emitting area consists of a plurality of effective luminescence units and pixel defining layer, be not that whole surface all can be luminous, therefore just there is aperture opening ratio concept.Aperture opening ratio refers to the ratio of the surface area of effective luminescence unit and the area of whole light-emitting area.In general, for illumination OLED product, aperture opening ratio is generally more than 80%.And for OLED, show product because on its surface except pixel defining layer also has pixel storage capacitor and TFT, so aperture opening ratio is generally in 50% left and right.
Fig. 1 shows a kind of structure of traditional OLED light-emitting device, and OLED mainly comprises substrate 1, planarization layer 2, luminescence unit 3 and pixel defining layer 4.Luminescence unit 3 and pixel defining layer 4 are arranged on planarization layer 2, and the surface of luminescence unit 3 is flat surfaces.
In order to improve the brightness of OLED, the way conventionally adopting is to improve the luminous efficiency of organic material, or improves aperture opening ratio.Improving the luminous efficiency of organic material need to much test, the luminescent device structure of optimization the best, and the raising of luminous efficiency has a limit.And the aperture opening ratio that improves OLED need to reduce the not area of light-emitting area such as auxiliary electrode, TFT, electric capacity.Aperture opening ratio is the highest in general at present can only accomplish 60% left and right, and OLED, as a kind of conventional illumination and display material, has larger use amount now, and therefore the aperture opening ratio of current OLED not too can meet the demand of use.
In addition, when OELD display floater resolution is higher, the aperture area of pixel can be less, and pixel intensity also can reduce.
Therefore, need a kind of apparatus and method that can improve pixel intensity in the situation that not reducing resolution.
In the disclosed above-mentioned information of described background technology part, only for strengthening the understanding to background of the present disclosure, so it can comprise the information not forming prior art known to persons of ordinary skill in the art.
Summary of the invention
For the problems referred to above, inventor, through long-term further investigation, arranges the planarization layer that comprises bend between luminescence unit and substrate, thereby increases light-emitting area, improves luminosity.
According to one side of the present disclosure, a kind of OLED light-emitting device is provided, comprising:
Substrate;
Be positioned at the planarization layer on described substrate, wherein said planarization layer has a plurality of bends that are spaced apart from each other;
Be positioned at a plurality of luminescence units on described planarization layer, each luminescence unit is positioned on described bend and has and the corresponding shape of described bend, and wherein each luminescence unit comprises:
The first electrode;
Be positioned at the ray structure on described the first electrode;
Be positioned at the second electrode on described ray structure,
Wherein, a cross section of described bend has curved profile on the whole.
According to a demonstration execution mode of the present disclosure, also comprise pixel defining layer, between adjacent described bend.
According to another demonstration execution mode of the present disclosure, wherein said bend is the protuberance being formed on described planarization layer.
According to another demonstration execution mode of the present disclosure, wherein said bend and described planarization layer comprise same material.
According to another demonstration execution mode of the present disclosure, wherein said bend and described planarization layer are integrally formed.
According to another demonstration execution mode of the present disclosure, wherein said bend comprises photo anti-corrosion agent material.
According to another demonstration execution mode of the present disclosure, wherein said bend is the depression being formed in described planarization layer.
According to another demonstration execution mode of the present disclosure, wherein said bend has multiple concavo-convex surface.
According to another demonstration execution mode of the present disclosure, one of wherein said the first electrode and described second electrode are anode, and another is negative electrode.
According to another aspect of the present disclosure, a kind of method of the OLED of manufacture light-emitting device is provided, comprising:
On substrate, form planarization layer;
On described planarization layer, form a plurality of bends that are spaced apart from each other;
On described bend, form the first electrode;
On described the first electrode, form ray structure and the second electrode;
Wherein, a cross section of described bend has curved profile on the whole.
According to disclosure method demonstration execution mode, be also included in after forming described the first electrode and form pixel defining layer, described pixel defining layer is between adjacent described bend and expose at least part of surface of described the first electrode.
According to another demonstration execution mode of disclosure method, wherein said bend is the protuberance being formed on described planarization layer.
According to another demonstration execution mode of disclosure method, wherein said bend and described planarization layer comprise same material.
According to another demonstration execution mode of disclosure method, wherein said bend and described planarization layer are integrally formed.
According to another demonstration execution mode of disclosure method, wherein said bend comprises photo anti-corrosion agent material.
Another demonstration execution mode according to disclosure method, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
According to another demonstration execution mode of disclosure method, wherein said bend is the depression being formed in described planarization layer.
Another demonstration execution mode according to disclosure method, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
According to another demonstration execution mode of disclosure method, wherein said bend has multiple concavo-convex surface.
Another demonstration execution mode according to disclosure method, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
The disclosure arranges bend by the contact position at luminescence unit and planarization layer, luminescence unit is changed to curved surface by flat surfaces, increase substantially the aperture opening ratio of Organic Light Emitting Diode, increase light-emitting area, thereby improve the luminosity of organic diode, reduce power consumption and extend product useful life.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional OLED light-emitting device;
Fig. 2 is according to the structural representation of the OLED light-emitting device of an execution mode of the disclosure;
Fig. 3 is according to the structural representation of the OLED light-emitting device of another execution mode of the disclosure;
Fig. 4 is according to the structural representation of the OLED light-emitting device of another execution mode of the disclosure;
Fig. 5 is according to the process chart of disclosure method execution mode.
Wherein, description of reference numerals is as follows:
100,200,300:OLED light-emitting device
1,102,202,302: substrate
2,104,204,304: planarization layer
104a, 204a, 304a: bend
3,106,206,306: luminescence unit
106a, 206a, 306a: the first electrode
106b, 206b, 306b: ray structure
106c, 206c, 306c: the second electrode
4,108,208,308: pixel defining layer
Embodiment
Referring now to accompanying drawing, example embodiment is more fully described.Yet example embodiment can be implemented in a variety of forms, and should not be understood to be limited to execution mode set forth herein; On the contrary, provide these execution modes to make the disclosure by comprehensive and complete, and the design of example embodiment is conveyed to those skilled in the art all sidedly.In the drawings, for clear, exaggerated the thickness of region and layer.Identical in the drawings Reference numeral represents same or similar structure, thereby will omit their detailed description.
Described feature, structure or characteristic can be combined in one or more execution modes in any suitable manner.In the following description, thus provide many details to provide fully understanding embodiment of the present disclosure.Yet, one of skill in the art will appreciate that and can put into practice technical scheme of the present disclosure and there is no one or more in described specific detail, or can adopt other method, constituent element, material etc.In other cases, be not shown specifically or describe known configurations, material or operation to avoid fuzzy each side of the present disclosure.
Referring now to Fig. 2, so that the OLED display unit according to an execution mode of the disclosure to be described.
As shown in Figure 2, it illustrates OLED display unit 100, has substrate 102.Substrate 102 can comprise as the transparent insulation material of glass, plastic cement or pottery.
On substrate 102, be provided with planarization layer 104.Planarization layer 104 can be by forming as method of spin coating.The material of planarization layer 104 is for example photo anti-corrosion agent material or spin-coating glass (spin on glass, SOG), and its material all can be made photoetching process.
On planarization layer 104, be provided with and have a plurality of bend 104a that are spaced apart from each other, bend 104a is the protuberance being formed on planarization layer 104, and a cross section of bend 104a has curved profile on the whole.Bend 104a can be planarization layer 104 after photoetching, developing process or etch process, and gives forming after baking-curing, can utilize for example gray scale mask to carry out photoetching or etching.Bend 104a and planarization layer 104 can comprise same material or be integrally formed.Bend 104a also can comprise photo anti-corrosion agent material.
On planarization layer 104, be provided with a plurality of luminescence units 106, each luminescence unit 106 is positioned at bend 104a above and has the corresponding shape with bend 104a.Luminescence unit 106 comprises the first electrode 106a, ray structure 106b and the second electrode 106c.
The first electrode 106a has covered the bend 104a of planarization layer 104 substantially, relatively makes the first electrode 106a also have curved surface corresponding with the bend 104a of planarization layer 104.The first electrode can be male or female, the electric conducting material adopting is such as being the metal materials such as aluminium, silver, magnesium, palladium, platinum, or be the light transmissive materials such as metal oxide of indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or zinc oxide (ZnO), it can use individually or in combination.When device is bottom-emission, the first electrode 106a is used as while be the metal materials such as aluminium, silver, magnesium, palladium, platinum, has to its demonstration 5～200 dusts
thickness, so that the light transmittance that is greater than 50% to be provided.When device is top light emitting, the first electrode can be combined with as the metal oxide of the metal materials such as aluminium, silver, magnesium, palladium, platinum and indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or zinc oxide (ZnO), and its demonstration ground has 100～3000 dusts
thickness.In addition, the electric conducting material of the first electrode 106a can form by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
On the first electrode 106a, be provided with ray structure 106b and the second electrode 106c, it is corresponding with the bend 104a of planarization layer 104 that ray structure 106b and the second electrode 106c all have curved surface.
Ray structure 106b can comprise electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer, wherein electron injecting layer can be lithia, lithia boron, silicon potassium oxide, cesium carbonate or alkali metal fluoride, a kind of as in lithium fluoride, potassium fluoride, cesium fluoride.
Electron transfer layer requires to have higher electron mobility, higher glass transformation temperature and thermal stability and can form evenly via hot evaporation, the film of pore-free, a kind of in Ke Wei oxazole derivative, metallo-chelate quinoline, quinoline derivant, phenazine derivative, ferrosin derivative, siliceous heterocyclic compound.
Luminescent layer can comprise organic material or inorganic material, for example, be small molecule material, polymeric material or organometallic complex, and it can form by modes such as thermal vacuum evaporation, rotary coating, ink-jet, laser transfer printing or screen paintings.
Hole transmission layer requires to have higher electron mobility, has the film of high thermal stability energy vacuum evaporation formation free of pinholes; Selectable hole mobile material is the diamine compounds of paired coupling, as TPD, TAPC, NPB, β-NPB, α-NPD; Triphenyl amine compound, as TDAB, TDAPB, PTDATA, spiro-mTTB; Or a kind of in some three arylamine polymer, carbazole compound.
The energy level matching degree of hole injection layer requirement and anode and adjacent hole transmission layer is good, can for but be not limited to CuPc, TNATA, PEDOT.The scheme of demonstration is that hole injection layer adopts a P type doped structure, by hole mobile material doped with oxygen agent as SbCl
5, FeCl
3, iodine, F4-TCNQ or TBAHA.Certainly can also adopt other any structures that can improve hole injection such as quantum well structure.
The second electrode 106c can be negative electrode or anode, the electric conducting material adopting is for example the metal material of aluminium, silver, magnesium, palladium, platinum, or be the light transmissive materials such as metal oxide of indium tin oxide, indium-zinc oxide, aluminium zinc oxide or zinc oxide, it can use individually or in combination, and can form by modes such as sputter or evaporations.
On planarization layer 104, be also provided with pixel defining layer 108, expose the first electrode 106a and bend 104a shape surface accordingly, its material is for example silica, silicon nitride, nitrogen oxide silicon, organic non-conductive polymer or its combination, and can be by forming as the manufacture method of physical vaporous deposition, chemical vapour deposition technique and rotary coating.Pixel defining layer 108 is positioned at outside the bend on planarization layer 104, and a plurality of luminescence units 106 are spaced apart.
So, the first electrode 106a, the ray structure 106b in luminescence unit 106 and the second electrode 106c all have the corresponding shape with bend 104a, by kenel is so set, contribute to promote the light-emitting area of luminescence unit 106, thereby improve luminosity.
Referring now to Fig. 3, so that the OLED display unit according to another execution mode of the disclosure to be described.
As shown in Figure 3, it illustrates OLED display unit 200, has substrate 202.The material of substrate 202 is identical with a upper execution mode.
On substrate 202, be provided with planarization layer 204.The material of planarization layer 204 and formation method are identical with a upper execution mode.
On planarization layer 204, be provided with and have a plurality of bend 204a that are spaced apart from each other, bend 204a is the depression being formed on planarization layer 204, and a cross section of bend 204a has curved profile on the whole.The formation of bend 204a can be for example at planarization layer 204 painting photoresists, photoresist is carried out to photoetching, developing process or etch process, and give forming after baking-curing, can utilize for example gray scale mask to carry out photoetching or etching.
On planarization layer 204, be provided with a plurality of luminescence units 206, each luminescence unit 206 is positioned at bend 204a above and has the corresponding shape with bend 204a.Luminescence unit 206 comprises the first electrode 206a, ray structure 206b and the second electrode 206c.
The first electrode 206a has covered the bend 204a of planarization layer 204 substantially, relatively makes the first electrode 206a also have curved surface corresponding with the bend 204a of planarization layer 204.The material of the first electrode 206a is identical with a upper execution mode with formation method.
On the first electrode 206a, be provided with ray structure 206b and the second electrode 206c, it is corresponding with the bend 204a of planarization layer 204 that ray structure 206b and the second electrode 206c all have curved surface.The material of ray structure 206b and the second electrode 206c is identical with a upper execution mode with formation method.
On planarization layer 204, be also provided with pixel defining layer 208, expose the first electrode 206a and bend 204a shape surface accordingly, pixel defining layer 208 is positioned at outside the bend on planarization layer 204, and a plurality of luminescence units 206 are spaced apart.The material of pixel defining layer 208 is identical with a upper execution mode with formation method.
So, the first electrode 206a, the ray structure 206b in luminescence unit 206 and the second electrode 206c all have the corresponding shape with bend 204a, by kenel is so set, contribute to promote the light-emitting area of luminescence unit 206, thereby improve luminosity.
Referring now to Fig. 4, so that the OLED display unit according to another execution mode of the disclosure to be described.
As shown in Figure 4, it illustrates OLED display unit 300, has substrate 302.The material of substrate 302 is identical with a upper execution mode with formation method.
On substrate 302, be provided with planarization layer 304.The material of planarization layer 304 is identical with a upper execution mode with formation method.
On planarization layer 304, be provided with and have a plurality of bend 304a that are spaced apart from each other, bend 304a has multiple convex-concave surface, and a cross section of bend 304a has curved profile on the whole.Bend 304a can be planarization layer 304 after photoetching, developing process or etch process, and gives forming after baking-curing, can utilize for example gray scale mask to carry out photoetching or etching.
On planarization layer 304, be provided with a plurality of luminescence units 306, each luminescence unit 306 is positioned at bend 304a above and has the corresponding shape with bend 304a.Luminescence unit 306 comprises the first electrode 306a, ray structure 306b and the second electrode 306c.
The first electrode 306a has covered the bend 304a of planarization layer 304 substantially, relatively makes the first electrode 306a also have the curved surface corresponding with the bend 304a of planarization layer 304.The material of the first electrode 306 is identical with a upper execution mode with formation method.
On the first electrode 306a, be provided with ray structure 306b and the second electrode 306c, it is corresponding with the bend 304a of planarization layer 304 that ray structure 306b and the second electrode 306c all have curved surface.The material of ray structure 306b and the second electrode 306c is identical with a upper execution mode with formation method.
On planarization layer 304, be also provided with pixel defining layer 308, expose the first electrode 306a and bend 304a shape surface accordingly, pixel defining layer 308 is positioned at outside the bend on planarization layer 304, and a plurality of luminescence units 306 are spaced apart.The material of pixel defining layer 308 is identical with a upper execution mode with formation method.
So, the first electrode 306a, the ray structure 306b in luminescence unit 306 and the second electrode 306c all have the corresponding shape with bend 304a, by kenel is so set, contribute to promote the light-emitting area of luminescence unit 306, thereby improve luminosity.
Referring now to Fig. 5, to illustrate according to an execution mode of disclosure method, manufacture OLED light-emitting device.
As shown in Figure 5, first, form planarization layer on substrate.Substrate can comprise as the transparent insulation material of glass, plastic cement or pottery.Planarization layer can be by forming as method of spin coating.The material of planarization layer is for example photo anti-corrosion agent material or spin-coating glass (spin on glass, SOG).
Secondly, form bend on planarization layer.Bend can be the lug boss that is formed on planarization layer, caves in or have multiple convex-concave surface, and a cross section of bend has curved profile on the whole.Bend and planarization layer can comprise same material or be integrally formed.The concrete steps that form bend can be included in and on planarization layer, form photoresist layer, and utilize gray scale mask by photoetching and developing process, in photoresist layer, form opening; Then implement process of surface treatment, adopting photoresist layer is mask, and then surface treatment is the surface of the planarization layer that exposes of photoresist layer and gives baking-curing, and make it to form bend, above-mentioned process of surface treatment is such as being plasma etch process or being the manufacture methods such as plasma etch process of the suitable mask of collocation (such as gray scale mask), but the disclosure is not limited to this.For example, planarization layer can comprise photo anti-corrosion agent material, utilizes gray scale mask to carry out photoetching process to photo anti-corrosion agent material, then carries out developing process and gives baking-curing, thereby obtain described bend.Wherein baking-curing is preferably in the baking box of 150～350 ℃ and toasts, thereby allows photoresistance levelling and form level and smooth concave-convex curved surface.
Again, form the first electrode on bend, and have and the corresponding shape of bend.After removing photoresist layer, surface in planarization layer forms layer of conductive material, above-mentioned electric conducting material is conformably formed on planarization layer and inserts bend, then implement photoetching and etch process with this layer of electric conducting material of patterning, on the part surface of planarization layer, left electric conducting material, first electrode of usining as light-emitting device.The first electrode has covered the bend of planarization layer substantially, relatively makes the first electrode also have the shape corresponding with bend.At this, the included electric conducting material of the first electrode is such as being the metal materials such as aluminium, silver, magnesium, palladium, platinum, or is the light transmissive materials such as metal oxide of indium tin oxide, indium-zinc oxide, aluminium zinc oxide or zinc oxide, and it can use individually or in combination.When device is bottom-emission, the first electrode 106a is used as while be the metal materials such as aluminium, silver, magnesium, palladium, platinum, has to its demonstration 5～200 dusts
thickness, so that the light transmittance that is greater than 50% to be provided.When device is top light emitting, the first electrode can be combined with as the metal oxide of the metal materials such as aluminium, silver, magnesium, palladium, platinum and indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or zinc oxide (ZnO), and its demonstration ground has 100～3000 dusts
thickness.In addition, the electric conducting material of the first electrode 106a can form by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
Then, form pixel defining layer on planarization layer, pixel defining layer is between adjacent bend and expose at least part of surface of the first electrode.Pixel defining layer is positioned at outside the bend on planarization layer, and a plurality of luminescence units are spaced apart.The material of pixel defining layer is for example silica, silicon nitride, nitrogen oxide silicon, organic non-conductive polymer or its combination, and can be by forming as the manufacture method of physical vaporous deposition, chemical vapour deposition technique and rotary coating.Afterwards, by photoetching and etch process and coordinate the use of photoresist pattern, with this pixel defining layer of patterning and expose the curved surface of anode.
Finally, sequentially form ray structure and the second electrode on the first electrode.Ray structure comprises electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer, and by photoetching and etch process, forms stacking ray structure and negative electrode.Electron injecting layer can be lithia, lithia boron, silicon potassium oxide, cesium carbonate or alkali metal fluoride, a kind of as in lithium fluoride, potassium fluoride, cesium fluoride.Electron transfer layer requires to have higher electron mobility, higher glass transformation temperature and thermal stability and can form evenly via hot evaporation, the film of pore-free, a kind of in Ke Wei oxazole derivative, metallo-chelate quinoline, quinoline derivant, phenazine derivative, ferrosin derivative, siliceous heterocyclic compound.Luminescent layer can comprise organic material or inorganic material, for example, be small molecule material, polymeric material or organometallic complex, and it can form by modes such as thermal vacuum evaporation, rotary coating, ink-jet, laser transfer printing or screen paintings.Hole transmission layer requires to have higher electron mobility, has the film of high thermal stability energy vacuum evaporation formation free of pinholes, selectable hole mobile material is the diamine compounds of paired coupling, as TPD, TAPC, NPB, β-NPB, α-NPD; Triphenyl amine compound, as TDAB, TDAPB, PTDATA, spiro-mTTB; Or a kind of in some three arylamine polymer, carbazole compound.The energy level matching degree of hole injection layer requirement and anode and adjacent hole transmission layer is good, can for but be not limited to CuPc, TNATA, PEDOT.The scheme of demonstration is that hole injection layer adopts a P type doped structure, by hole mobile material doped with oxygen agent as SbCl
5, FeCl
3, iodine, F4-TCNQ or TBAHA.Certainly can also adopt other any structures that can improve hole injection such as quantum well structure.The electric conducting material of the second electrode is for example the metal material of aluminium, silver, magnesium, palladium, platinum, or be the light transmissive materials such as metal oxide of indium tin oxide, indium-zinc oxide, aluminium zinc oxide or zinc oxide, it can use individually or in combination, and can form by modes such as sputter or evaporations.
In sum, the disclosure arranges bend by the contact position at luminescence unit and planarization layer, luminescence unit is changed to curved surface by flat surfaces, increase substantially the aperture opening ratio of Organic Light Emitting Diode, increase light-emitting area, thereby improve the luminosity of organic diode, reduce power consumption and extend product useful life.
Those skilled in the art it should be noted in the discussion above that the described execution mode of the disclosure is only exemplary, can in the scope of the present disclosure, make various other replacements, changes and improvements.Thereby the disclosure is not limited to above-mentioned execution mode, and is only defined by the claims.
Claims (20)
1. an OLED light-emitting device, comprising:
Substrate;
Be positioned at the planarization layer on described substrate, wherein said planarization layer has a plurality of bends that are spaced apart from each other;
Be positioned at a plurality of luminescence units on described planarization layer, each luminescence unit is positioned on described bend and has and the corresponding shape of described bend, and wherein each luminescence unit comprises:
The first electrode;
Be positioned at the ray structure on described the first electrode;
Be positioned at the second electrode on described ray structure,
Wherein, a cross section of described bend has curved profile on the whole.
2. according to the OLED light-emitting device of claim 1, also comprise pixel defining layer, between adjacent described bend.
3. according to the OLED light-emitting device of claim 1, wherein said bend is the protuberance being formed on described planarization layer.
4. according to the OLED light-emitting device of claim 3, wherein said bend and described planarization layer comprise same material.
5. according to the OLED light-emitting device of claim 4, wherein said bend and described planarization layer are integrally formed.
6. according to the OLED light-emitting device of claim 5, wherein said bend comprises photo anti-corrosion agent material.
7. according to the OLED light-emitting device of claim 1, wherein said bend is the depression being formed in described planarization layer.
8. according to the OLED light-emitting device of claim 1, wherein said bend has multiple concavo-convex surface.
9. according to the OLED light-emitting device of claim 1, one of wherein said the first electrode and described second electrode are anode, and another is negative electrode.
10. a method of manufacturing OLED light-emitting device, comprising:
On substrate, form planarization layer;
On described planarization layer, form a plurality of bends that are spaced apart from each other;
On described bend, form the first electrode;
On described the first electrode, form ray structure and the second electrode;
Wherein, a cross section of described bend has curved profile on the whole.
11. according to the method for claim 10, is also included in after forming described the first electrode and forms pixel defining layer, and described pixel defining layer is between adjacent described bend and expose at least part of surface of described the first electrode.
12. according to the method for claim 10, and wherein said bend is the protuberance being formed on described planarization layer.
13. according to the method for claim 12, and wherein said bend and described planarization layer comprise same material.
14. according to the method for claim 13, and wherein said bend and described planarization layer are integrally formed.
15. according to the method for claim 14, and wherein said bend comprises photo anti-corrosion agent material.
16. according to the method for claim 15, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
17. according to the method for claim 10, and wherein said bend is the depression being formed in described planarization layer.
18. according to the method for claim 17, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
19. according to the method for claim 10, and wherein said bend has multiple concavo-convex surface.
20. according to the method for claim 19, wherein forms described bend and comprises:
Utilize gray scale mask to carry out photoetching process to described planarization layer;
Described planarization layer is carried out to developing process, and give baking-curing, thereby obtain described bend.
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| CN201410155846.2A CN103928626A (en) | 2014-04-17 | 2014-04-17 | Oled light-emitting device and manufacturing method thereof |
| TW103120090A TW201541629A (en) | 2014-04-17 | 2014-06-10 | Organic light emitting display (OLED) device and method for fabricating the same |
| JP2014166283A JP2015207545A (en) | 2014-04-17 | 2014-08-19 | Oled light emission device and manufacturing method for the same |
| KR1020150053913A KR20150120311A (en) | 2014-04-17 | 2015-04-16 | Oled light emitting device and method for manufacturing thereof |
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| CN201410155846.2A CN103928626A (en) | 2014-04-17 | 2014-04-17 | Oled light-emitting device and manufacturing method thereof |
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| JP (1) | JP2015207545A (en) |
| KR (1) | KR20150120311A (en) |
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| TW (1) | TW201541629A (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201541629A (en) | 2015-11-01 |
| JP2015207545A (en) | 2015-11-19 |
| KR20150120311A (en) | 2015-10-27 |
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