JP2015207545A - Oled light emission device and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable enhancement of emission luminance of an organic light emission diode, reduction of power consumption and extension of the lifetime of products.SOLUTION: The present invention relates to an OLED light emission device and a manufacturing method for the same. The OLED light emission device has a substrate, a planarization layer disposed on the substrate and having plural curved portions spaced from one another, and plural light emission units disposed on the planarization layer. Each light emission unit is disposed at the curved portion and has a shape corresponding to the curved portion. Each light emission unit has a first electrode, a light emission structure disposed on the first electrode and a second electrode disposed on the light emission structure. One cross-section of the curved portion has an arcuate outline as a whole. According to the present invention, the curved portion is disposed at the contact site between the light emission unit and the polarization unit, and the light emission unit is configured so that the flat surface is changed to the curved surface, whereby the opening ratio of the organic light emission diode is greatly enhanced and the light emission area is increased.

Description

  The present invention relates to a light emitting device, and more particularly to an OLED light emitting device and a manufacturing method thereof.

  An OLED (Organic Light Emitting Diode) is an organic electroluminescent device, in which an organic luminescent material is sandwiched between a transparent anode and a metal reflective cathode, and light is emitted by applying a voltage to an organic thin film to display the device. It may be used as a lighting device.

  The light emitting unit of OLED mainly comprises a metal cathode, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and a transparent anode. Since the OLED light emitting surface is composed of a plurality of effective light emitting units and a pixel definition layer, the entire surface cannot emit light, so there is a concept of an aperture ratio. The aperture ratio means the ratio of the surface area of the effective light emitting unit to the total area of the light emitting surface. Usually, the aperture ratio of the lighting OLED product is generally 80% or more. An OLED display product has an image storage capacitor and a TFT in addition to a pixel definition layer on the surface thereof, so that the aperture ratio is generally about 50%.

  FIG. 1 shows a configuration of a traditional OLED light emitting device, and the OLED mainly includes a substrate 1, a planarization layer 2, a light emitting unit 3, and a pixel definition layer 4. The light emitting unit 3 and the pixel definition layer 4 are disposed on the planarization layer 2, and the surface of the light emitting unit 3 is a flat surface.

  In order to improve the brightness | luminance of OLED, the method normally used is a method of improving the luminous efficiency or aperture ratio of an organic material. In order to improve the luminous efficiency of the organic material, it is necessary to perform many tests, and there is a limit to optimize the configuration of the best light emitting device and improve the luminous efficiency. In order to improve the aperture ratio of the OLED, it is necessary to reduce the area of the non-light emitting surface such as the auxiliary electrode, the TFT, and the electric capacity. At present, although the maximum aperture ratio generally reaches only about 60%, OLED is used in a relatively large amount as an ordinary lighting and display material. Can not meet the demand for use.

  In addition, the higher the resolution of the OELD display panel, the smaller the aperture area of the pixel and the lower the luminance of the pixel.

  Therefore, there is a need for an apparatus and method that can improve pixel brightness without reducing resolution.

  The above information disclosed in the background section is only used to better understand the background of the present invention, and may therefore contain information that does not constitute prior art known to those skilled in the art. .

DISCLOSURE OF THE INVENTION In view of the above problems, the inventors have conducted extensive research over a long period of time, and as a result, by arranging a planarization layer including a curved portion between a light emitting unit and a substrate, a light emitting area. It was found that the emission intensity was increased by increasing the emission intensity.

According to one aspect of the present invention, an OLED light emitting device comprising:
A substrate,
A planarizing layer disposed on the substrate and having a plurality of curved portions spaced from each other;
A plurality of light emitting units disposed on the planarization layer,
Each light emitting unit is disposed in the curved portion and has a shape corresponding to the curved portion,
Each light emitting unit has a first electrode, a light emitting structure disposed on the first electrode, and a second electrode disposed on the light emitting structure,
One section of the curved portion has an arcuate outline as a whole.

  According to an embodiment of the present invention, it further includes a pixel definition layer positioned between the adjacent curved portions.

  According to another embodiment of the present invention, the curved portion and the planarizing layer include the same material, and the curved portion and the planarized layer are integrally formed.

According to another embodiment of the present invention, the curved portion is a recess formed in the planarizing layer.
According to another embodiment of the present invention, the curved portion has multiple uneven surfaces.

According to another aspect of the present invention, there is provided a method for manufacturing an OLED light emitting device,
Forming a planarization layer on the substrate;
Forming a plurality of curved portions spaced apart from each other in the planarizing layer;
Forming a first electrode on the curved portion;
Forming a light emitting structure and a second electrode on the first electrode,
One section of the curved portion has an arcuate outline as a whole.

  According to another embodiment of the method of the present invention, after the first electrode is formed, a pixel definition layer is formed, the pixel definition layer is positioned between the adjacent curved portions, and At least a part of the surface of the first electrode is exposed.

According to another embodiment of the method according to the present invention, the curved portion and the planarizing layer are the same material,
The curved portion and the planarizing layer are integrally formed,
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and baking and curing are performed to obtain the curved portion.

According to another embodiment of the method according to the present invention, the curved portion is a depression formed in the planarizing layer,
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and baking and curing are performed to obtain the curved portion.

According to another embodiment of the method according to the present invention, the curved portion has multiple uneven surfaces,
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and baking and curing are performed to obtain the curved portion.

  In the present invention, a curved portion is disposed at a portion where the light emitting unit and the planarizing layer are in contact with each other, and the light emitting unit is changed from a flat surface to a curved surface, thereby greatly improving the aperture ratio of the organic light emitting diode (OLED). By increasing the light emitting area, the light emitting luminance of the organic light emitting diode is improved, the power consumption is reduced, and the life of the product is extended.

It is a schematic diagram which shows the structure of a traditional OLED light-emitting device. It is a schematic diagram which shows the structure of the OLED light-emitting device which concerns on one Embodiment of this application. It is a schematic diagram which shows the structure of the OLED light-emitting device which concerns on other one Embodiment of this application. It is a schematic diagram which shows the structure of the OLED light-emitting device which concerns on other one Embodiment of this application. FIG. 3 is a process flow diagram of an embodiment of a method according to the present application.

  Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the exemplary embodiments can be implemented in a variety of forms and should not be construed as limited to only the embodiments described herein, but rather by the provision of these embodiments, The present invention can be disclosed fully and completely, and the concept of this exemplary embodiment is completely communicated to those skilled in the art. In the figures, the thickness of such regions and layers is exaggerated for clarity. In the drawings, the same reference numerals indicate the same or similar structures, and detailed descriptions thereof are omitted.

  The described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. However, one of ordinary skill in the art appreciates that the technical solution according to the present invention may be practiced without one or more of the specific details described above, or other methods, components, materials, etc. may be used. In other instances, detailed descriptions or representations of well-known structures, materials, or operations are not made in order to avoid obscuring aspects of the invention.

  Here, with reference to FIG. 2, the OLED display device which concerns on one Embodiment of this invention is demonstrated.

  As shown in FIG. 2, the OLED display device 100 has a substrate 102. The substrate 102 can include a transparent insulating material of glass, plastic, or ceramics.

  A planarization layer 104 is disposed on the substrate 102. The planarization layer 104 can be formed by, for example, a spin coating method. The material of the planarization layer 104 is, for example, a photoresist material or spin on glass (SOG), and any of the materials can be used in a photolithography process.

  A plurality of curved portions 104a spaced apart from each other are arranged on the planarizing layer 104. The curved portion 104a is a protruding portion formed on the planarizing layer 104, and one section of the curved portion 104a has an arcuate outline as a whole. Have The curved portion 104a may be formed after photolithography, a development process, or an etching process is performed on the planarization layer 104, followed by baking and curing. For example, the curved section 104a may be formed using a gray scale mask. Lithography or etching may be performed. The curved portion 104a and the planarization layer 104 may include the same material or may be integrally formed. The curved portion 104a may include a photoresist material.

  A plurality of light emitting units 106 are disposed on the planarization layer 104, and each light emitting unit 106 has a shape that is positioned on the curved portion 104a and that corresponds to the curved portion 104a. The light emitting unit 106 includes a first electrode 106a, a light emitting structure 106b, and a second electrode 106c.

  The first electrode 106 a substantially covers the curved portion 104 a of the planarizing layer 104, and thus the first electrode 106 a also has a curved surface corresponding to the curved portion 104 a of the planarized layer 104. The first electrode may be an anode or a cathode, and as a conductive material used therefor, for example, a metal material such as aluminum, silver, magnesium, palladium, platinum, or indium tin oxide (ITO), indium zinc oxide Examples thereof include light-transmitting materials such as metal oxides such as (IZO), aluminum zinc oxide (AZO), or zinc oxide (ZnO), which may be used alone or in combination. When the device is bottom emission, the first electrode 106a has a thickness of 5 to 200 angstroms (so that the light transmittance exceeds 50% when a metal material such as aluminum, silver, magnesium, palladium, or platinum is used. A) can have a thickness. When the device is top emission, the first electrode is made of a metal material such as aluminum, silver, magnesium, palladium, platinum, and indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), or A metal oxide of zinc oxide (ZnO) may be used in combination, and may have a thickness of 100 to 3000 angstroms (A). The conductive material of the first electrode 106a is formed by a sputtering method, an electron beam vapor deposition method, a thermal vapor deposition method, a chemical vapor deposition method, and a spray pyrolysis method.

  The light emitting structure 106b and the second electrode 106c are disposed on the first electrode 106a, and each of the light emitting structure 106b and the second electrode 106c has a curved surface corresponding to the curved portion 104a of the planarization layer 104.

  The light emitting structure 106b may include an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer, wherein the electron injection layer includes lithium oxide, lithium boron oxide, potassium silicon oxide, It may be one kind selected from cesium carbonate or an alkali metal fluoride such as lithium fluoride, potassium fluoride, and cesium fluoride.

  The electron transport layer is required to have higher electron mobility, higher glass transition temperature, and thermal stability, and can form a uniform and microporous thin film by thermal evaporation. The chelate compound is one of a quinoline derivative, a quinoxaline derivative, a phenazine derivative, a phenanthroline derivative, and a silicon-containing heterocyclic compound.

  The light emitting layer may include an organic material or an inorganic material, for example, a low molecular material, a polymer material, or an organometallic complex, and is formed by means such as thermal vacuum deposition, spin coating, ink jet, laser transfer, or screen printing. The

  The hole transport layer is required to have a higher electron mobility and higher thermal stability and to form a pinhole-free thin film by vacuum deposition. Selectable hole transport materials include, for example, TPD, TAPC NPB, β-NPB, α-NPD coupled diamine compounds, TDAB, TDAPB, PTDATA, spiro-mTTB such as triphenylamine compounds, or some triarylamine polymers , One of carbazole compounds.

  The hole injection layer is required to have good matching of energy levels with the anode and the adjacent hole transport layer, and may be CuPc, TNATA, or PEDOT, but is not limited thereto. In one exemplary form, the hole injection layer uses a P-type doped structure and the hole transport material is doped with an oxidizing agent such as SbCl5, FeCl3, iodine, F4-TCNQ or TBAHA. . Needless to say, any other structure such as a quantum well structure can be used as long as the hole injection can be improved.

  The second electrode 106c may be a cathode or an anode, and as a conductive material used therefor, for example, a metal material such as aluminum, silver, magnesium, palladium, platinum, or indium tin oxide, indium zinc oxide, Examples include translucent materials such as aluminum zinc oxide or metal oxides such as zinc oxide, which may be used alone, in combination, or formed by sputtering or vapor deposition. Good.

  A pixel definition layer 108 is further disposed on the planarization layer 104 to expose a surface corresponding to the curved surface portion 104a of the first electrode 106a. Examples of the material of the pixel definition layer 108 include silicon oxide, silicon nitride, silicon oxynitride, non-conductive organic polymer, or a combination thereof, and physical vapor deposition, chemical vapor deposition, and It can be formed by a spin coating method. The pixel definition layer 108 is located outside the curved portion on the planarization layer 104 and isolates the plurality of light emitting units 106.

  As described above, each of the first electrode 106a, the light emitting structure 106b, and the second electrode 106c in the light emitting unit 106 has a shape corresponding to the curved portion 104a. It contributes to improving the light emission area of the unit 106 and increases the light emission luminance.

  Here, an OLED display device according to another embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 3, the OLED display device 200 has a substrate 202. The material of the substrate 202 is the same as in the above embodiment.

  A planarization layer 204 is disposed on the substrate 202. The material of the planarization layer 204 and the formation method thereof are the same as those in the above embodiment.

  A plurality of curved portions 204a spaced from each other are arranged in the planarizing layer 204, and the curved portion 204a is a recess formed on the planarizing layer 204, and one section of the curved portion 204a has an arcuate outline as a whole. Have The curved portion 204a may be formed after, for example, applying a photoresist to the planarizing layer 204, performing a photolithography, a developing process, or an etching process on the photoresist, and performing baking and curing. Photolithography or etching may be performed using a gray scale mask.

  A plurality of light emitting units 206 are disposed on the planarization layer 204, and each light emitting unit 206 has a shape that is positioned on the curved portion 204a and that corresponds to the curved portion 204a. The light emitting unit 206 includes a first electrode 206a, a light emitting structure 206b, and a second electrode 206c.

  The first electrode 206 a substantially covers the curved portion 204 a of the planarization layer 204, so that the first electrode 206 a also has a curved surface corresponding to the curved portion 204 a of the planarization layer 204. The material of the first electrode 206a and the formation method thereof are the same as those in the above embodiment.

  A light emitting structure 206b and a second electrode 206c are disposed on the first electrode 206a, and each of the light emitting structure 206b and the second electrode 206c has a curved surface corresponding to the curved portion 204a of the planarization layer 204. The material of the light emitting structure 206b and the second electrode 206c and the formation method thereof are the same as those in the above embodiment.

  A pixel definition layer 208 is further disposed on the planarization layer 204 to expose a surface corresponding to the shape of the curved portion 204a of the first electrode 206a. The pixel definition layer 208 is located outside the curved portion of the planarization layer 204 and isolates the plurality of light emitting units 206. The material of the pixel definition layer 208 and the formation method thereof are the same as those in the above embodiment.

  As described above, each of the first electrode 206a, the light emitting structure 206b, and the second electrode 206c in the light emitting unit 206 has a shape corresponding to the curved portion 204a. It contributes to improving the light emission area of the unit 206 and increases the light emission luminance.

  Here, an OLED display device according to another embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 4, the OLED display device 300 has a substrate 302. The material of the substrate 302 and the formation method thereof are the same as those in the above embodiment.

  A planarization layer 304 is disposed on the substrate 302. The material of the planarization layer 304 and the formation method thereof are the same as those in the above embodiment.

  A plurality of curved portions 304a spaced from each other are arranged on the planarizing layer 304, the curved portions 304a have multiple uneven surfaces, and one section of the curved portion 304a has an arcuate outline as a whole. The curved portion 304a may be formed after performing photolithography, a developing process, or an etching process on the planarizing layer 304, baking, and curing. For example, the curved section 304a may be formed using a gray scale mask. Lithography or etching may be performed.

  A plurality of light emitting units 306 are disposed on the planarization layer 304, and each light emitting unit 306 has a shape that is positioned on the curved portion 304a and that corresponds to the curved portion 304a. The light emitting unit 306 includes a first electrode 306a, a light emitting structure 306b, and a second electrode 306c.

  The first electrode 306 a substantially covers the curved portion 304 a of the planarization layer 304, so that the first electrode 306 a also has a curved surface corresponding to the curved portion 304 a of the planarization layer 304. The material of the first electrode 306 and the formation method thereof are the same as those in the above embodiment.

  The light emitting structure 306b and the second electrode 306c are disposed on the first electrode 306a, and each of the light emitting structure 306b and the second electrode 306c has a curved surface corresponding to the curved portion 304a of the planarization layer 304. The material of the light emitting structure 306b and the second electrode 306c and the formation method thereof are the same as those in the above embodiment.

  A pixel definition layer 308 is further disposed on the planarization layer 304 to expose a surface corresponding to the shape of the curved portion 304a of the first electrode 306a. The pixel definition layer 308 is located outside the curved portion of the planarization layer 304 and isolates the plurality of light emitting units 306. The material of the pixel definition layer 308 and the formation method thereof are the same as those in the above embodiment.

  As described above, each of the first electrode 306a, the light emitting structure 306b, and the second electrode 306c in the light emitting unit 306 has a shape corresponding to the curved portion 304a. It contributes to improving the light emission area of the unit 306 and increases the light emission luminance.

  Referring now to FIG. 5, the manufacturing of an OLED light emitting device according to an embodiment of the method according to the present invention will be described.

  As shown in FIG. 5, first, a planarization layer is formed on the substrate. The substrate can include a transparent insulating material of glass, plastic, or ceramic. The planarization layer can be formed by, for example, a spin coating method. The material of the planarization layer is, for example, a photoresist material or spin on glass (SOG).

  Next, a curved portion is formed in the planarizing layer. The curved portion may be a protrusion or a depression formed on the planarizing layer, or may have multiple uneven surfaces, and one section of the curved portion has an arcuate outline as a whole. The curved portion and the planarizing layer may include the same material or may be formed integrally. As a specific process for forming the curved portion, a photoresist layer is formed on the planarization layer, and an opening is formed in the photoresist layer by photolithography and development processes using a gray scale mask; a surface treatment process is performed. Using the photoresist layer as a mask, surface treatment is performed on the surface of the planarization layer exposed to the photoresist layer, and the curved portion is formed by baking and curing. For example, a manufacturing method such as a plasma etching process or a plasma etching process combined with an appropriate mask (for example, a gray scale mask) is used, but the present invention is not limited thereto. For example, the planarization layer may include a photoresist material, using a gray scale mask, performing a photolithography process on the photoresist material, performing a development process, and performing baking and curing, thereby A curved portion can be obtained. Among them, the baking / curing is preferably performed in an oven at 150 to 350 ° C. so as to form a smooth uneven surface by flattening the photoresist.

  Again, the first electrode is formed on the curved portion and has a shape corresponding to the curved portion. After removing the photoresist layer, a layer of conductive material is formed on the surface of the planarization layer, and the conductive material is naturally formed on the planarization layer and fills the curve, then this layer A photolithography and etching process is performed so as to pattern the conductive material, and the conductive material is left on a part of the surface of the planarization layer to form the first electrode of the light emitting device. The first electrode substantially covers the curved portion of the planarization layer, and thus the first electrode also has a shape corresponding to the curved portion. Here, as the conductive material of the first electrode, for example, a metal material such as aluminum, silver, magnesium, palladium, or platinum, or a metal oxide such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc oxide. Examples thereof include translucent materials such as objects, and these can be used alone or in combination. When the device is bottom emission, the first electrode 106a has a thickness of 5 to 200 angstroms (A) so that the light transmittance exceeds 50% when a metal material such as aluminum, silver, magnesium, palladium, or platinum is used. ). When the device is top emission, the first electrode is made of a metal material such as aluminum, silver, magnesium, palladium, platinum, and indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), or A metal oxide such as zinc oxide (ZnO) may be used in combination, and preferably has a thickness of 100 to 3000 angstroms (A). The conductive material of the first electrode 106a can be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical vapor deposition method, and a spray pyrolysis method.

  Subsequently, a pixel definition layer is formed on the planarization layer, and the pixel definition layer is positioned between adjacent curved portions and exposes at least a part of the surface of the first electrode. The pixel definition layer is located outside the curved portion of the planarization layer and isolates the plurality of light emitting units. The material of the pixel definition layer may be, for example, silicon oxide, silicon nitride, silicon oxynitride, non-conductive organic polymer, or a combination thereof, and physical vapor deposition, chemical vapor deposition, And can be formed by spin coating. Thereafter, the pixel defining layer is patterned using a photoresist pattern by a photolithography and etching process to expose the curved surface of the anode.

  Finally, a light emitting structure and a second electrode are sequentially formed on the first electrode. The light-emitting structure includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer, and a stacked light-emitting structure and a cathode are formed by photolithography and etching processes. The electron injection layer may be one selected from lithium oxide, lithium boron oxide, potassium silicon oxide, cesium carbonate, or an alkali metal fluoride such as lithium fluoride, potassium fluoride, and cesium fluoride. The electron transport layer is required to have higher electron mobility, higher glass transition temperature, and thermal stability, and can form a uniform and microporous thin film by thermal evaporation. The chelate compound is one of a quinoline derivative, a quinoxaline derivative, a phenazine derivative, a phenanthroline derivative, and a silicon-containing heterocyclic compound. The light emitting layer may include an organic material or an inorganic material, for example, a low molecular material, a polymer material, or an organometallic complex, and is formed by means such as thermal vacuum deposition, spin coating, ink jet, laser transfer, or screen printing. The The hole transport layer is required to have a higher electron mobility and high thermal stability and to form a thin film free of pinholes by vacuum deposition. Selectable hole transport materials are, for example, TPD , A pair-coupled diamine compound such as TAPC, NPB, β-NPB, α-NPD, a triphenylamine compound such as TDAB, TDAPB, PTDATA, spiro-mTTB, or some triaryl One of amine polymers and carbazole compounds. The hole injection layer is required to have a good energy level matching with the anode and the adjacent hole transport layer, and may be CuPc, TNATA, or PEDOT, but is not limited thereto. In one exemplary form, the hole injection layer uses a P-type doped structure and the hole transport material is doped with an oxidant such as, for example, SbCl5, FeCl3, iodine, F4-TCNQ, or TBAHA. Needless to say, any other structure such as a quantum well structure can be used as long as the hole injection can be improved. The conductive material of the second electrode is, for example, a metal material such as aluminum, silver, magnesium, palladium, or platinum, or a metal oxide such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc oxide. These materials may be used alone, or may be used alone or in combination, and may be formed by sputtering or vapor deposition.

  In summary, in the present invention, a curved portion is disposed at a portion where the light emitting unit and the planarizing layer are in contact with each other, and the light emitting unit is changed from a flat surface to a curved surface, thereby providing an organic light emitting diode (OLED). By significantly improving the aperture ratio and increasing the light emitting area, the light emitting luminance of the organic light emitting diode was improved, the power consumption was reduced, and the life of the product was extended.

  Those skilled in the art should note the following. That is, the embodiments according to the present invention are merely examples, and various other substitutions, changes, and improvements can be made within the scope of the present invention. Accordingly, the present invention is not limited to the above-described embodiment, but is limited only by the scope of the claims.

100, 200, 300: OLED light emitting device 1, 102, 202, 302: Substrate 2, 104, 204, 304: Planarization layer 104a, 204a, 304a: Curved portion 3, 106, 206, 306: Light emitting unit 106a, 206a 306a: First electrodes 106b, 206b, 306b: Light emitting structures 106c, 206c, 306c: Second electrodes 4, 108, 208, 308: Pixel definition layer

Claims (10)

A substrate,
A planarizing layer disposed on the substrate and having a plurality of curved portions spaced from each other;
A plurality of light emitting units disposed in the planarization layer;
With
Each light emitting unit is disposed in the curved portion and has a shape corresponding to the curved portion,
Each light emitting unit includes a first electrode, a light emitting structure disposed on the first electrode, and a second electrode disposed on the light emitting structure,
The OLED light-emitting device, wherein one section of the curved portion has an arcuate outline as a whole.   The OLED light-emitting device according to claim 1, further comprising a pixel definition layer positioned between the adjacent curved portions. The curved portion and the planarizing layer include the same material,
The OLED light-emitting device according to claim 1, wherein the curved portion and the planarizing layer are integrally formed.   The OLED light-emitting device according to claim 1, wherein the curved portion is a depression formed in the planarizing layer.   The OLED light-emitting device according to claim 1, wherein the curved portion has multiple uneven surfaces. Forming a planarization layer on the substrate;
Forming a plurality of curved portions spaced apart from each other in the planarizing layer;
Forming a first electrode on the curved portion;
Forming a light emitting structure and a second electrode on the first electrode;
Prepared
The manufacturing method of an OLED light-emitting device, wherein one section of the curved portion has an arcuate outline as a whole.   The pixel defining layer is formed after forming the first electrode, the pixel defining layer is disposed between the adjacent curved portions, and at least a part of the surface of the first electrode is exposed. The method described in 1. The curved portion and the planarizing layer include the same material,
The curved portion and the planarizing layer are integrally formed,
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and baking and curing are performed to obtain the curved portion.
The method of claim 6, comprising: The curved portion is a depression formed in the planarizing layer;
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and the curved portion is obtained by baking and curing.
The method of claim 6, comprising: The curved portion has multiple uneven surfaces;
To form the curved portion,
Using a gray scale mask, a photolithography process is performed on the planarization layer,
A development process is performed on the planarizing layer, and the curved portion is obtained by baking and curing.
The method of claim 6, comprising:

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