CN106024807B - A kind of display panel and preparation method thereof - Google Patents
A kind of display panel and preparation method thereof Download PDFInfo
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- CN106024807B CN106024807B CN201610398810.6A CN201610398810A CN106024807B CN 106024807 B CN106024807 B CN 106024807B CN 201610398810 A CN201610398810 A CN 201610398810A CN 106024807 B CN106024807 B CN 106024807B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The invention discloses a kind of display panel and production method, which includes: substrate；The planarization layer of the substrate surface is set；The surface of the planarization layer has adjustment structure；The planarization layer has first area and second area；The surface of the first area is parallel to the substrate；The adjustment structure is located at the second area；The first area and the setting of second area alternate intervals；Cover the display unit on the adjustment structure surface；Wherein, the adjustment structure is the bulge-structure or groove structure that the second area is arranged in.The adjustment structure is conducive to increase the surface area of light emitting functional layer, reduces light emitting functional layer in the projected area of orientation substrate, increases the number of display unit, achievees the effect that increase aperture opening ratio and resolution ratio.
Description
Technical field
The present invention relates to field of display technology, more specifically to a kind of display panel and preparation method thereof.
Background technique
With the continuous development of science and technology, more and more electronic equipments having a display function are widely used in
In daily life and work, huge convenience is brought for daily life and work, becomes current
The indispensable important tool of people.Electronic equipment realizes that the main component of display function is display panel, OLED display panel
It is one of the display panel of current main-stream.
With reference to Fig. 1, Fig. 1 is a kind of structural schematic diagram of OLED display panel common in the art, which shows
Panel includes: the cover board 12 being oppositely arranged and array substrate 11.Array substrate 11 include: substrate 117, TFT device 111, as
Plain definition layer 116 and display unit.TFT device 111 is between display unit and substrate 117.Display unit includes: anode
112, light emitting functional layer 113 and cathode 114.Wherein, anode 112 is arranged towards TFT device 111, anode 112 and TFT device
There is planarization layer 118 between 111.Anode 112 is connect by first through hole Via1 with the drain electrode of TFT device 111.Pixel definition
Layer 116 has multiple openings, the corresponding pixel unit of an opening.The light emitting functional layer 113 of pixel unit is located at described open
In mouthful.On the certain display panel of size, due to the limitation of reflecting layer light-emitting area and vapor deposition mask plate, it is unfavorable for aperture opening ratio
Promotion.Although the method for increasing aperture opening ratio by reducing exposure mask panel aperture is to improve the common method of structure definition, by
The limitation of pattern density and board ability is arrived.
Summary of the invention
In view of this, the aperture opening ratio of display panel is improved the present invention provides a kind of display panel and production method,
Improve resolution ratio.
To achieve the above object, the invention provides the following technical scheme:
A kind of display panel, the display panel include:
Substrate；
The planarization layer of the substrate surface is set；The surface of the planarization layer has adjustment structure；It is described flat
Changing layer has first area and second area；The surface of the first area is parallel to the substrate；The adjustment structure position
In the second area；The first area and the setting of second area alternate intervals；
Cover the display unit on the adjustment structure surface；
Wherein, the adjustment structure is the bulge-structure or groove structure that the second area is arranged in.
Preferably, in the above display panel, the display unit includes:
The first electrode unit on the adjustment structure surface is set；
The light emitting functional layer of the first electrode cell surface is set；
The second electrode lay of the light-emitting function layer surface is set.
Preferably, in the above display panel, the substrate includes:
Substrate；
Multiple thin film transistor (TFT)s of the substrate towards the planarization layer side are set；
Wherein, the first electrode unit passes through the through-hole and the thin film transistor (TFT) being arranged on the planarization layer
Drain electrode connection.
Preferably, in the above display panel, the first electrode unit includes:
Cover the protective layer of the adjustment structure；
Cover the reflecting layer of the protective layer；
Cover the first electrode layer in the reflecting layer.
Preferably, in the above display panel, further includes: the pixel defining layer positioned at the first area surface；
Wherein, the pixel defining layer is not overlapped with the adjustment structure.
Preferably, in the above display panel, on the direction perpendicular to the substrate, the section shape of the adjustment structure
Shape is that triangle, semicircle, trapezoidal, truncation be one of semicircle or combination.
The present invention also provides a kind of production methods, and for making above-mentioned display panel, which includes:
One substrate is provided；
Planarization layer is formed in the substrate surface, the planarization layer surface has adjustment structure；The planarization layer
With first area and second area；The surface of the first area is parallel to the substrate；The adjustment structure is located at institute
State second area；
Display unit is formed on the adjustment structure surface；
Wherein, the adjustment structure is the bulge-structure or groove structure that the second area is arranged in.
Preferably, described to include: in substrate surface formation planarization layer in above-mentioned production method
The organic layer of one layer of planarization is formed in the substrate surface；
Development is exposed to the organic layer using the different intermediate tone mask of different zones transmissivity, to pattern
Organic layer is stated, the organic surface after patterning has the adjustment structure；Organic layer after patterning have first area with
And second area；The adjustment structure is the bulge-structure or groove structure that the second area is arranged in；
Wherein, the surface of the first area is parallel to the substrate；The adjustment structure is located at the second area.
Preferably, described to include: in adjustment structure surface formation display unit in above-mentioned production method
First electrode unit is formed on the adjustment structure surface；
Light emitting functional layer is formed in the first electrode cell surface；
The second electrode lay is formed in the light-emitting function layer surface；
Wherein, the drain electrode that the first electrode unit passes through through-hole and the thin film transistor (TFT) through the planarization layer
Connection.
It is preferably, described to form display unit on the adjustment structure surface in above-mentioned production method further include:
When the adjustment structure is bulge-structure, after forming the first electrode unit, in the first area
Form pixel defining layer；
Wherein, the pixel defining layer is not overlapped with the adjustment structure.
Preferably, described to include: in first electrode cell surface formation light emitting functional layer in above-mentioned production method
Using the mask plate of predetermined pattern structure, by evaporation process, being formed has shining for presetted pixel definition structure
Functional layer.
Compared with prior art, the technical scheme provided by the invention has the following advantages:
In display panel provided by the present invention, the surface of the planarization layer has adjustment structure, the adjustment structure
It is the bulge-structure or groove structure that the second area is set, the adjustment structure is conducive to increase light emitting functional layer
Surface area, reduce light emitting functional layer in the projected area of orientation substrate, increase the number of display unit, reach increase aperture opening ratio and
The effect of resolution ratio.For production method provided by the invention for making above-mentioned display panel, the adjustment structure can be by not
The realization of planarization layer described in the intermediate tone mask patterned process different with zone transmittances, simple process.In addition, passing through setting
The adjustment structure of groove structure can save the manufacture craft of pixel defining layer, simplify technique, save the cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of OLED display panel common in the art；
Fig. 2 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of adjustment structure provided in an embodiment of the present invention；
Fig. 5 is the schematic illustration that display panel of the embodiment of the present invention increases aperture opening ratio；
Fig. 6 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 7 is a kind of method flow schematic diagram of production method provided in an embodiment of the present invention；
Fig. 8 is a kind of method flow diagram of planarization layer forming method provided in an embodiment of the present invention；
Fig. 9-Figure 10 is a kind of production flow diagram of planarization layer provided in an embodiment of the present invention；
Figure 11 is a kind of method flow diagram of the forming method of display unit provided in an embodiment of the present invention；
Figure 12-Figure 15 is a kind of production flow diagram of display unit provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, in existing OLED display panel, on the certain display panel of size, since reflecting layer shines
The limitation of area and vapor deposition exposure mask panel aperture, is unfavorable for the promotion of aperture opening ratio.Although increasing opening by reducing exposure mask panel aperture
The method of rate is to improve the common method of structure definition, but receive the limitation of pattern density and board ability.
To solve the above-mentioned problems, the embodiment of the invention provides a kind of display panel, which includes:
Substrate；
The planarization layer of substrate surface is set；The surface of planarization layer has adjustment structure；Planarization layer has first
Region and second area；The surface of first area is parallel to substrate；Adjustment structure is located at second area；First area and second
The setting of region alternate intervals；
Cover the display unit on adjustment structure surface；
Wherein, adjustment structure is the bulge-structure or groove structure that second area is arranged in.
As it can be seen that the adjustment structure on the surface of planarization layer can increase in display panel provided by the embodiment of the present invention
The surface area of light emitting functional layer reduces projected area of the light emitting functional layer on orientation substrate, increases the number of display unit, reach
To the effect for improving aperture opening ratio and resolution ratio.
In order to make the technical scheme provided by the embodiment of the invention clearer, above scheme is carried out with reference to the accompanying drawing detailed
Thin description.
With reference to Fig. 2, Fig. 2 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention, the display panel packet
It includes: substrate 21；The planarization layer 22 on 21 surface of substrate is set；The surface of planarization layer 22 has adjustment structure 23；Planarization
Layer 22 has first area A and second area B；The surface of first area A is parallel to substrate 21；Adjustment structure 23 is located at second
Region B；First area A and the setting of second area B alternate intervals；Cover the display unit 24 on 23 surface of adjustment structure.
In display panel shown in Fig. 2, adjustment structure 23 is the bulge-structure that second area B is arranged in.
Optionally, in the display panel of the embodiment of the present invention further include: the pixel defining layer positioned at the first area surface A
27.Wherein, pixel defining layer 27 is not overlapped with adjustment structure 23.
Display panel of the embodiment of the present invention is OLED display panel.Each display unit 24 has light emitting functional layer 243.It is logical
The pixel defining layer 27 that setting has predetermined pattern structure is crossed, multiple pixel openings are formed, it can be by the luminous function of display unit
Ergosphere 243 is made in corresponding pixel openings.
Specifically, display unit 24 includes: the first electrode unit 242 that 23 surface of adjustment structure is arranged in；Setting is the
The light emitting functional layer 243 on one electrode unit, 242 surface；The second electrode lay 241 on 243 surface of light emitting functional layer is set.
Optionally, first electrode unit 242 includes: the protective layer for covering adjustment structure；The reflecting layer of protective mulch；It covers
The first electrode layer in lid reflecting layer.Specifically, the first electrode unit can be ITO-Ag-ITO structure, using one layer of ITO
Layer is used as the protective layer, is used as the reflecting layer using one layer Ag layers, one layer of ITO is as the first electrode layer.
As shown in Fig. 2, substrate 21 includes: substrate 211；Substrate 211 is set towards the multiple thin of 22 side of planarization layer
Film transistor.Thin film transistor (TFT) has drain electrode 212.Wherein, first electrode unit 242, which passes through, is arranged in leading on planarization layer 22
Hole 26 is connect with the drain electrode 212 of thin film transistor (TFT).Optionally, on the direction perpendicular to substrate 21, through-hole 26 is on the base plate (21
Projection do not overlapped with the projection of adjustment structure on the base plate (21.
It should be noted that not showing that the structure of entire thin film transistor (TFT) in Fig. 2, the leakage of thin film transistor (TFT) is illustrated only
Pole 212.Substrate 211 can be the tft array substrate being arranged on glass substrate 213, and tft array substrate is provided with film crystal
Pipe.
Display panel further includes the encapsulated layer 28 being arranged on display unit 24, and the encapsulated layer 28 can be glass plate,
The glass plate and substrate 21 are encapsulated in edge relative position by packaging plastic.The encapsulated layer 28 can also be thinner package
Film is formed by thin film encapsulation processes.
In the exemplary embodiment illustrated in fig. 2, adjustment structure 23 is the bulge-structure that 22 surface of planarization layer is arranged in.At other
In embodiment, adjustment structure 23 can also be the groove structure that 22 surface of planarization layer is arranged in, as shown in Figure 3.
With reference to Fig. 3, Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, display shown in Fig. 3
Panel is that the implementation of adjustment structure 23 is different from display panel difference shown in Fig. 2, and in Fig. 3, adjustment structure 23 is to set
Set the groove structure on 22 surface of planarization layer.At this point, display unit 24 and the shape and structure of pixel defining layer 27 needs pair
Groove structure is answered to be arranged.
Optionally, in a direction perpendicular to a substrate, the cross sectional shape of adjustment structure 23 be triangle, semicircle, it is trapezoidal,
One of truncation semicircle or combination.In display panel of the embodiment of the present invention, the shape of adjustment structure 23 includes but is not limited to Fig. 4
Shown in structure, i.e. bulge-structure or groove structure includes but is not limited to structure shown in Fig. 4, comprising: semicircle (1),
Trapezoidal (2), equilateral triangle (3), right angled triangle (4), truncation semicircle (5), equilateral triangle and semicircular group of truncation
Close (6) and semicircle and trapezoidal combination (7).It is illustrated for when adjustment structure 23 is raised structures in Fig. 4
, when adjustment structure 23 is groove structure, it is only necessary to shape each in Fig. 4 be rotated 180 °, postrotational graphic structure is
The shape of groove.
When adjustment structure 23 is bulge-structure, to display panel by taking bulge-structure is triangular-section shown in Fig. 2 as an example
The principle for increasing aperture opening ratio is illustrated.
It is the schematic illustration that display panel of the embodiment of the present invention increases aperture opening ratio with reference to Fig. 5, Fig. 5.Conventional display panels
Structure as shown in (b) figure in Fig. 5, planarization layer 51 be planar structure, if what a display unit occupied on planarization layer
Length is L.
So, using the technical solution of the embodiment of the present invention as shown in (a) figure in Fig. 5, it is arranged on planarization layer and adjusts
The substrate surface of structure 23, adjustment structure 23 and display panel has default angle β.Display unit is arranged in 23 surface of adjustment structure
24 length remains as L, and due to having default angle β, on the direction X perpendicular to substrate, display unit 24 is in substrate table
The projected length in face will shorten to L-L ' by original L.The length of L ' depends on the size of default angle β, and default angle β is got over
Greatly, L ' is bigger, and L projected on orientation substrate it is smaller.In this way, can be made on the display panel of limited size more aobvious
Show unit.
In the display panel of the embodiment of the present invention, adjustment structure 23 has with substrate 21 into the side of default angle.Side
It can be plane or curved surface.When side is curved surface, angle is preset in the different location of curved surface, angle is different.When side is
When plane, angle is definite value.
When adjustment structure 23 is groove, the principle for increasing aperture opening ratio is similar with Fig. 5 illustrated embodiment.Due to groove
Structure has with substrate into the side of default angle, can increase the surface area of the pixel region of production display unit, set
More display units can be made on the display panel of size, increase aperture opening ratio and resolution ratio.
It should be noted that all display units share same layer conductive layer and make in display panel of the embodiment of the present invention
For the second electrode lay 241.Corresponding electrode pattern can also be arranged in conductive layer.
When adjustment structure 23 be groove structure when, display panel of the embodiment of the present invention can by be arranged groove depth,
The side wall on groove both sides is multiplexed as pixel defining layer, is multiplexed the groove structure of planarization layer at this time as pixel defining layer, nothing
Pixel defining layer need to be set, manufacture craft is simplified, reduced the production cost.
With reference to Fig. 6, Fig. 6 is the structural schematic diagram of another display panel provided in an embodiment of the present invention, the display panel
In, adjustment structure 23 is the groove structure that 22 surface of planarization layer is arranged in.In the first electrode unit 242 of production display unit
And when light emitting functional layer 243, it is only necessary to be sequentially formed in groove structure by corresponding mask plate by the evaporation process
First electrode unit 242 and light emitting functional layer 243.Then, the second electrode lay is formed on 243 surface of light emitting functional layer
241.At this point, through-hole 26 can be set in one end of second area.
It should be noted that in Fig. 6 for the ease of illustration, illustrating only planarization layer 22, through-hole 26 and display unit
The other structures of 24 structure, display panel can refer to above-described embodiment mode.
As can be seen from the above description, in the display panel of the embodiment of the present invention, light-emitting function is increased by adjustment structure 23
The surface area of layer 243 reduces light emitting functional layer 243 in the projected area of orientation substrate, increases the number of display unit, reach and mention
The effect of high aperture and resolution ratio.
Based on above-mentioned display panel embodiment, another embodiment of the present invention additionally provides a kind of production method, is used to prepare
The display panel of above-described embodiment, the production method are as shown in Figure 7.
With reference to Fig. 7, Fig. 7 is a kind of method flow schematic diagram of production method provided in an embodiment of the present invention, the production side
Method includes:
Step S11: a substrate is provided.
The substrate includes tft array substrate, and tft array substrate is provided with multiple TFT devices, and tft array substrate setting exists
Substrate surface.
Step S12: planarization layer is formed in substrate surface, wherein the surface of planarization layer has adjustment structure；Planarization
Layer has first area and second area；The surface of first area is parallel to substrate；Adjustment structure is located at second area.
Adjustment structure is the bulge-structure or groove structure that second area is arranged in.
Step S13: display unit is formed on adjustment structure surface.
The structure of finally formed display panel is as shown in Fig. 2, Fig. 3 or Fig. 6.After forming display unit, production
Method further include: protection is packaged to the substrate for being formed with display unit by encapsulated layer.
When being packaged protection, protection can be packaged to the substrate using glass cover-plate, using packaging plastic by institute
The surrounding for stating glass cover-plate and the substrate is sealed fixation.
Protection can also be packaged to the display panel by forming packaging film on the display unit surface.
The method of planarization layer is formed in substrate surface as shown in figure 8, Fig. 8 is that one kind provided in an embodiment of the present invention is flat
Change the method flow diagram of layer forming method, which includes:
Step S21: as shown in figure 9, forming the organic layer 22a of one layer of planarization on 21 surface of substrate.
Organic layer can be formed in substrate surface using coating process or spin coating proceeding.The thickness of organic layer can be
2.0 μm -5.0 μm, including endpoint value.The material of organic layer can be polyimides or acrylic material.Form organic layer 22a
Afterwards, pressure need to be taken out to be dried, pressure 5Pa-90Pa, time 50s-270s.It is handled using resistance or Hot-blast Heating,
Treatment temperature is 50 DEG C -210 DEG C, time 50s-300s.It is handled using cold plate and I/F thermostatic, substrate is made to reach pre-
If technological temperature.Optionally, the preset technological temperature can be 23 ± 0.1 DEG C.
Step S22: as shown in Figure 10, using the different halftoning of different zones transmissivity (Halftone) exposure mask to organic
Layer 22a is exposed development, to pattern organic layer 22a.
The surface organic layer 22a after patterning has adjustment structure 23；Organic layer 22a after patterning has first area
A and second area B；Adjustment structure 23 is the bulge-structure or groove structure that second area B is arranged in.To adjust in Figure 10
Structure 23 be bulge-structure for illustrated.Wherein, the surface of first area A is parallel to substrate 21；Adjustment structure 23
Positioned at second area B.
Mask plate when exposure development uses Halftone technology, can be formed simultaneously through-hole 26 and adjustment structure 23.Pattern
Organic layer 22a after change is planarization layer 22.Planarization layer 22 has through-hole 26.Through-hole 26 can be set in first area A or
It is second area B.When adjustment structure 23 is bulge-structure, through-hole 26 is arranged in first area A.When adjustment structure 23 is recessed
When slot structure, through-hole 26 is arranged in one end of second area B.The position of through-hole 26 can be located at the first area A or
The second area B.In Figure 10 illustrated embodiment, relatively flat and thinner thickness first area is arranged in through-hole 26
A can make the technological parameter of via hole 26 more accurate, and make the formation process of through-hole 26 cost is relatively low.
It should be noted that through-hole can be formed in first area or second when the adjustment structure is bulge-structure
Region.The position of through-hole is designed according to panel design requirement, the position of through-hole includes but is not limited to scheme in the embodiment of the present invention
Show position.
GHI Line is used when exposure-processed.Wherein, the mask plate of exposure-processed uses Immunohistochemistry, makes different zones
Transmitance it is different.For forming the adjustment structure 23 of shape shown in Figure 10, the region that mask plate corresponds to through-hole 26 is full impregnated, is covered
The region transmitance that film version corresponds to adjustment structure 23 has left-to-right to gradually become smaller, and mask plate corresponds between through-hole 26 and adjustment structure
Region be that part penetrates, in this way, the organic layer 22a in 26 region of through-hole is complete after can making exposure when being developed
Etching, exposes the drain electrode of thin film transistor (TFT), and the organic layer 22a in the region between through-hole 26 and adjustment structure is partially etched, and adjusts
The corresponding organic layer 22a etch thicknesses of section structure 23 are gradually reduced from left to right.
The transitional region of mask plate can be used different transmitance film layers and be spliced, splicing regions length and adjustment structure
Design length it is identical, width by adjustment structure width and splicing number determine.In general, splicing quantity 2-75, width
0.5um-6.0um。
Photoresist causes the thickness etched after development different, can finally be formed in substrate surface because receiving light exposure difference
Different pattern, to form the planarization layer 22 with through-hole 26 and adjustment structure 23.General design adjustment structure 23
Angle between side and substrate 21 is 1 ° -60 °.
It is handled when development using 0.4% and 2.38% concentration TMAH, using resistance wire or Hot-blast Heating, temperature 50
DEG C -210 DEG C, heating time 50s-300s.Final substrate 21 is by annealing, the processing of Resistant heating constant temperature, treatment temperature
It is 100 DEG C -500 DEG C, the processing time is 15min-180min, to carry out firmly treatment, increases the drug resistance of photoresist, is guaranteed final
The pattern effect of the planarization layer 22 of formation.In current exposure development process, organic layer 22a is photoresist.
As shown in figure 11 in the method that adjustment structure surface forms display unit, Figure 11 is provided in an embodiment of the present invention one
The method flow diagram of the forming method of kind display unit, the forming method include:
Step S31: as shown in figure 12, first electrode unit 242 is formed on 23 surface of adjustment structure.
Conductive layer, pattern conductive can be formed on planarization layer surface first by physical vapour deposition (PVD) (PVD) method
The first electrode unit 242 of default electrode structure is formed after layer.First electrode unit 242 passes through through-hole 26 and thin film transistor (TFT)
Drain electrode 212 connect.
Wherein, conductive layer is ITO-Ag-ITO structure, i.e. conductive layer is made of three layers of conductor layer, after patterned conductive layer,
Finally formed first electrode unit 242 is also three-decker.First electrode unit 242 includes being located at 22 surface of planarization layer
First layer ITO layer covers the Ag layer of first layer ITO layer and covers Ag layers of second layer ITO layer.First layer ITO layer is protection
Layer, Ag layers are reflecting layer, and second layer ITO layer is first electrode layer.Optionally, the thickness of first layer ITO layer and second layer ITO layer
Degree be 35 angstroms -300 angstroms, Ag layers with a thickness of 600 angstroms -2700 angstroms.
It is as follows that patterned process is carried out to conductive layer: forming one layer of photoresist (photoresist), light in conductive layer surface first
Resistance with a thickness of 1.3 μm -3. μm.Mask plate by setting patterning is exposed and develops to photoresist, only retains and adjusts
The photoresist on 23 surface of section structure removes the photoresist other than 23 region of adjustment structure.This time photoetching process does not need to carry out photoresist
Firmly treatment.When development, according to the thickness of photoresist, the photoresist outside 23 region of adjustment structure is removed.Then, dense with certain proportion
The HNO of degree3、CH3COOH and H3PO4The medicament of composition by the conductor layer that photoresist is protected to not handled, not protected by photoresist
Region etch fall.Finally, the photoresist on 23 surface of adjustment structure is removed by presetting medicament, form knot as shown in figure 12
Structure.The medicine component for removing the photoresist on 23 surface of adjustment structure includes: dimethyl acetamide 40%-60%, N-METHYLFORMAMIDE
20%-40%；N-methyl-2-pyrrolidone 10%-20%, 2- (2- amino ethoxy) ethyl alcohol 5%-15%.
Step S32: as shown in figure 13, light emitting functional layer 243 is formed on 242 surface of first electrode unit.
When adjustment structure 23 is bulge-structure, in order to avoid being connected between the light emitting functional layer 243 of different display units
Leakage current is generated, after forming first electrode unit 242, in 23 surface of adjustment structure formation display unit further include: the
One region A forms pixel defining layer 27.Wherein, pixel defining layer 27 is not overlapped with adjustment structure 23.Pixel definition shown in being formed
After layer 27, light emitting functional layer 243 is formed in the open region of pixel defining layer 27.Open region and adjustment structure 23 1 are a pair of
It answers, open region is used to expose the first electrode unit 242 on 23 surface of adjustment structure.
When preparing the pixel defining layer 27 of predetermined pattern structure, first by coating process or spin coating proceeding flat
Change layer 22 and 242 surface of first electrode unit forms one layer of organic layer.The material of organic layer can be polyimides or Asia
Gram force material, it is preferably identical as the material of planarization layer 22, so that planarization layer 22 and pixel defining layer 27 have preferably
Adhesion effect.After forming organic layer, need to be dried, pressure 5Pa-90Pa, time 50s-270s.Using
Resistance or Hot-blast Heating processing, treatment temperature are 50 DEG C -210 DEG C, time 50s-300s.It is permanent using cold plate and I/F temperature
Temperature processing, makes substrate reach preset technological temperature.Optionally, the preset technological temperature can be 23 ± 0.1 DEG C.
After exposure-processed, the organic layer part through overexposure can be disposed with developed liquid.When development, using 0.4% He
2.38% concentration TMAH chemicals treatment, TMAH medicament is recycled or in line processing.Using resistance wire or Hot-blast Heating, temperature
Degree is 50 DEG C -210 DEG C, heating time 50s-300s.Final substrate 21 is by annealing, the processing of Resistant heating constant temperature, place
Managing temperature is 100 DEG C -500 DEG C, and the processing time is 15min-180min, so that organic layer pattern turns to pixel as shown in fig. 13 that
Definition layer 27.
First electrode list after forming the pixel defining layer 27 of predetermined pattern, in the open region of pixel defining layer 27
First 242 surfaces are deposited to form light emitting functional layer 243.Forming light emitting functional layer 243 on 242 surface of first electrode unit includes: to adopt
The light emitting functional layer with presetted pixel definition structure is formed by evaporation process with the mask plate of predetermined pattern structure.It shines
The pixel definition structure of functional layer can realize by mask plate and pixel defining layer, or mask plate when passing through vapor deposition with
And the side wall on multiplexing planarization layer groove both sides is pixel defining layer realization.In Figure 13, when adjustment structure 23 is bulge-structure
When, mask plate 131 is obliquely installed, so that mask plate is parallel with the side of adjustment structure 23, by the vapor deposition of evaporation material 132 to tune
23 surface of section structure forms light emitting functional layer 243.In other embodiments, mask plate and substrate-parallel can also be made to be arranged.
Above-mentioned production method is illustrated so that adjustment structure is bulge-structure as an example, when the adjustment structure is groove structure
When, the vapor deposition mode of the light emitting functional layer is as shown in figure 14.
With reference to Figure 14, Figure 14 is provided in an embodiment of the present invention a kind of in first electrode cell surface formation light emitting functional layer
Schematic diagram, the adjustment structure of display panel is the groove structure being arranged on planarization layer 22 at this time.When formation first electrode
After unit 242, by the mask plate 151 being obliquely installed, light emitting functional layer will be formed in the vapor deposition to groove structure of evaporation material 152
243.At this point, substrate level is arranged, mask plate 151 is obliquely installed.In other embodiments, mask plate level can also be set
It sets.
23 surface of adjustment structure vapor deposition using production method of the embodiment of the present invention, in the open region of pixel defining layer 27
When light emitting functional layer 243, does not change the aperture that vapor deposition uses mask plate, do not reduce the premise of the practical light-emitting area of light emitting functional layer
Under, it can reduce light emitting functional layer in orientation substrate projected area, increase the area of number of pixels and vapor deposition, improve display panel
Resolution ratio and aperture opening ratio.
Step S33: as shown in figure 15, the second electrode lay 241 is formed on 243 surface of light emitting functional layer.
Wherein, first electrode unit 242 is connected by the drain electrode 212 of through-hole 26 and thin film transistor (TFT) through planarization layer 22
It connects.
As can be seen from the above description, in embodiments of the present invention, under conditions of not changing mask plate aperture, pass through setting
Adjustment structure with preset shape, the adjustment structure have with substrate into the side of default angle, can make in identical ruler
Under very little display panel, increase the surface area of light emitting functional layer, reduces light emitting functional layer in the projected area of orientation substrate, increase
The number of display unit, to improve the aperture opening ratio and resolution ratio of display panel.In addition, when adjustment structure is groove structure,
By the way that depth of groove is arranged, planarization layer is multiplexed with pixel defining layer, technique is saved, reduces cost.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (3)
1. a kind of production method of display panel characterized by comprising
One substrate is provided；
Planarization layer is formed in the substrate surface, the surface of the planarization layer has adjustment structure；The planarization layer tool
There are first area and second area；The surface of the first area is parallel to the substrate；The adjustment structure is located at described
Second area；
Display unit is formed on the adjustment structure surface；
Wherein, the adjustment structure is the bulge-structure that the second area is arranged in, and the cross sectional shape of the adjustment structure is
Triangle, wherein the thickness of bulge-structure is gradually increased from left to right, and the angle between its side and substrate is 1 ° -60 °；
The method for forming the planarization layer are as follows: form the organic layer of one layer of planarization in substrate surface；It is saturating using different zones
It penetrates rate different intermediate tone mask and development is exposed to organic layer, form the planarization layer to pattern organic layer, wherein
The mask plate of exposure-processed uses Immunohistochemistry, and the region that mask plate corresponds to through-hole is full impregnated, and mask plate corresponds to adjustment structure
Region transmitance gradually become smaller from left to right, mask plate correspond to the region between through-hole and adjustment structure for part penetrate, this
Sample, when so that being developed after exposure, the organic layer of via regions is etched completely, exposes the drain electrode of thin film transistor (TFT), is led to
The organic layer in the region between hole and adjustment structure is partially etched, and the corresponding organic layer etch thicknesses of adjustment structure are from left to right
It is gradually reduced, the transitional region of mask plate is spliced using different transmitance film layers；
It is described to include: in adjustment structure surface formation display unit
First electrode unit is formed on the adjustment structure surface, the first electrode unit, which passes through, is arranged in the logical of first area
Hole is connect with the drain electrode of the thin film transistor (TFT)；
Light emitting functional layer is formed in the first electrode cell surface；
The second electrode lay is formed in the light-emitting function layer surface.
2. manufacturing method according to claim 1, which is characterized in that described to form display list on the adjustment structure surface
Member further include:
When the adjustment structure is bulge-structure, after forming the first electrode unit, formed in the first area
Pixel defining layer；
Wherein, the pixel defining layer is not overlapped with the adjustment structure.
3. manufacturing method according to claim 1, which is characterized in that described formed in the first electrode cell surface sends out
Light functional layer includes:
The light-emitting function for having presetted pixel definition structure is formed by evaporation process using the mask plate of predetermined pattern structure
Layer.
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| CN110827762B (en) | 2018-08-14 | 2021-07-09 | 云谷（固安）科技有限公司 | Display panel, display screen, control method of display screen and display terminal |
| CN109148705B (en) * | 2018-08-22 | 2020-03-24 | 武汉华星光电技术有限公司 | Preparation method of OLED substrate and OLED substrate |
| CN112038493B (en) * | 2020-08-17 | 2022-05-31 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114122084B (en) * | 2021-11-09 | 2024-04-30 | 深圳市华星光电半导体显示技术有限公司 | Top-emitting OLED display panel |
| CN114460772A (en) * | 2022-01-26 | 2022-05-10 | 武汉华星光电技术有限公司 | Array substrate and display panel |
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| CN104733632A (en) * | 2013-12-18 | 2015-06-24 | 昆山国显光电有限公司 | Organic light emitting display and manufacturing method thereof |
| CN105280669A (en) * | 2014-07-17 | 2016-01-27 | 乐金显示有限公司 | Display device |
| CN104538357A (en) * | 2015-01-13 | 2015-04-22 | 合肥京东方光电科技有限公司 | Method for manufacturing array substrate and array substrate |
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Effective date of registration: 20210930 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |