KR20150120311A - Oled light emitting device and method for manufacturing thereof - Google Patents

Abstract

An embodiment of the present invention relates to an OLED light emitting device and a method for manufacturing the same. The OLED light emitting device includes: a substrate; a planarization layer disposed on the substrate and including multiple curved portions segregated from one another; and multiple light emitting units disposed above the planarization layer, which are disposed on the curved portions and have shapes corresponding to the curved portions, wherein each of the light emitting units includes: a first electrode; a light emitting structure disposed on the first electrode; and a second electrode disposed on the light emitting structure, and a cross section of the curved portion has an arch outline of the overall figure. Since the curved portions are installed in the part where the light emitting units are in contact with the planarization layer, the light emitting units are transferred from a planarized surface to a curved surface to markedly increase the aperture ratio of an organic light emitting diode and consequently, increase the light emitting area. Thus, it is possible to reduce electricity losses and extend the service life of a product while enhancing the luminous intensity of the organic light emitting diode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an OLED light emitting device,

The present invention relates to a light emitting device, and more particularly, to an OLED light emitting device and a method of manufacturing the same.

OLED (Organic Light Emitting Diode) is an organic electroluminescent device which emits light by applying a voltage to an organic thin film through an organic light emitting material between a transparent anode and a metal reflective cathode. This can be used not only as a display device but also as a lighting device.

The OLED light emitting unit is mainly composed of a metal cathode, an electron injecting layer, an electron transporting layer, a light emitting layer, a hole transporting layer, a hole injecting layer, and a transparent anode. Since the OLED light emitting surface is composed of a plurality of effective light emitting units and pixel defining layers, the entire surface can not emit light, so that the concept of the aperture ratio exists. The aperture ratio means a ratio of the surface area of the effective light emitting unit to the total area of the light emitting surface. For lighting OLED products, the aperture ratio is generally greater than 80%. In the OLED display product, the aperture ratio is generally about 50% since the pixel defining layer and the TFT exist in the surface of the product in addition to the pixel defining layer.

FIG. 1 shows the structure of a conventional OLED light emitting device. The OLED mainly includes a substrate 1, a planarization layer 2, a light emitting unit 3, and a pixel defining layer 4. The light emitting unit 3 and the pixel defining layer 4 are provided on the planarizing layer 2, and the surface of the light emitting unit 3 is a flat surface.

As a commonly used method for improving the luminance of the OLED, there are methods of improving the luminous efficiency of the organic material or increasing the aperture ratio. In order to improve the luminous efficiency of an organic material, it is necessary to optimize the structure of a preferable light emitting device through a large amount of experiment, and there is a certain limit to enhance the luminous efficiency. In order to improve the OLED aperture ratio, it is necessary to reduce the area of the non-light emitting side of the auxiliary electrode, the TFT, the capacitor, and the like. At present, although OLEDs exhibit relatively large amounts of usage as conventional lighting and display materials, current OLED aperture ratios do not meet the needs of use, as the aperture ratio can generally be only about 60% at the most.

Also, the higher the resolution of the OLED display panel, the smaller the aperture area of the pixel and the lower the pixel brightness.

Therefore, there is a need for an apparatus and method that can improve the pixel brightness under conditions that do not reduce the resolution.

Since the above-mentioned contents disclosed in the background art are only used to facilitate a better understanding of the background of the present invention, the background art may include contents other than the prior art already known to those of ordinary skill in the art will be.

As a result of intensive studies based on the above problems, the present inventors have found that a planarization layer including a curved portion is provided between a light emitting unit and a substrate to increase the light emission area to increase the light emission luminance. .

In one aspect, the present invention provides an OLED light emitting device as described below. Board; A planarization layer positioned over the substrate and having a plurality of mutually isolated bends; Each of the light emitting units including a plurality of light emitting units disposed on the planarizing layer and having a shape corresponding to the curved portion, the light emitting units including a first electrode; A light emitting structure located on the first electrode; And a second electrode located on the light emitting structure, wherein one end face of the curved portion has an arch shape on the whole.

In one embodiment of the present invention, the light emitting device further includes a pixel defining layer positioned between the adjacent curved portions.

In another embodiment of the present invention, the curved portion and the planarization layer include the same material, and the curved portion and the planarization layer are integrally formed.

In another embodiment of the present invention, the curved portion is a depression formed in the flattening layer.

In another embodiment of the present invention, the curved portion has a multi-convex-concave surface.

In another aspect, the present invention provides a method of manufacturing an OLED light emitting device as described below. Forming a planarization layer on the substrate; Forming a plurality of mutually isolated curves on the planarization layer; Forming a first electrode on the curved portion; And forming a light emitting structure and a second electrode on the first electrode, wherein one end face of the curved portion has an arch shape on the whole.

In one embodiment of the manufacturing method of the present invention, a pixel defining layer is formed after forming the first electrode, and the pixel defining layer is located between the adjacent curved portions to expose a minimum partial surface of the first electrode .

According to another embodiment of the manufacturing method of the present invention, the curved portion and the flattening portion include the same material, and the curved portion and the flattening layer are integrally formed, and the forming of the curved portion is performed using the gray scale mask Performing a photoetching process on the flattening layer, and performing a baking process after performing the developing process on the flattening layer to obtain the curved portion.

In another embodiment of the manufacturing method of the present invention, the curved portion is a depression formed in the planarization layer, and the forming of the curved portion includes performing a photoetching process on the planarization layer using a gray scale mask, And performing a developing process on the flattening layer, followed by bake hardening to obtain the curved portion.

In another embodiment of the manufacturing method of the present invention, the curved portion has a multi-concave-convex surface, and the forming of the curved portion includes performing a photoetching process on the planarizing layer using a gray scale mask And performing a developing process on the flattening layer and then performing baking hardening to obtain the curved portion.

The present invention provides an organic light emitting diode having an organic light emitting diode and a method of manufacturing the organic light emitting diode by converting a light emitting unit from a planarizing surface to a curved surface by providing a curved portion at a contact portion between the light emitting unit and the planarizing layer, It is possible to improve light emission luminance, reduce power loss, and extend the service life of the product.

1 is a structural schematic diagram of a conventional OLED light emitting device.
2 is a structural schematic diagram of an OLED light emitting device according to an embodiment of the present invention.
3 is a structural schematic diagram of an OLED light emitting device according to another embodiment of the present invention.
4 is a structural schematic diagram of an OLED light emitting device according to another embodiment of the present invention.
5 is a process flow diagram according to an embodiment of the manufacturing method of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Exemplary embodiments will now be described with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in various forms and are not construed as being limited to the embodiments described below. On the contrary, the present invention can be fully and completely initiated by the provision of this embodiment, and the concept of the illustrative embodiment can be communicated to a person having ordinary skill in the art on the whole. The thickness of zones and layers is over-expressed for clarity in the figures. In the drawings, the same reference numerals denote the same or similar structures, and a detailed description thereof will be omitted.

The particular features, structures, or characteristics described may be combined in any suitable manner in one or more embodiments. A large amount of salvage details are provided in the following description to provide a thorough understanding of the manner in which the invention is practiced. However, it will be understood by those skilled in the art that the present invention may be practiced without one or more of the specific details, or with other methods, components, materials, You will know. The known structures, materials, or operations under different circumstances are not described or described in detail, so as not to disturb the concept of the present invention.

An OLED display device according to an embodiment of the present invention will now be described with reference to FIG.

As shown in FIG. 2, the figure shows an OLED display device 100 having a substrate 102. The substrate 102 may include a transparent insulating material composed of glass, plastic, or ceramic.

A planarization layer 104 is provided on the substrate 102. The planarization layer 104 may be formed by a spin coating method. The planarization layer 104 material may be a photoresist material or a spin on glass (SOG) and the materials may be used in a photoetching process.

A plurality of mutually isolated curved portions 104a are provided on the planarization layer 104. The curved portions 104a are protrusions formed on the planarization layer 104. One end face of the curved portion 104a has an arcuate contour curved over the entirety. After the planarization layer 104 is subjected to a photoetching process, a developing process, or an etching process, bending hardening may be performed to form the curved portion 104a. For example, photoetching or etching may be performed using a gray scale mask. The curved portion 104a and the planarization layer 104 may include the same material or may be integrally formed. The curved portion 104a may further include a photoresist material.

A plurality of light emitting units 106 are provided on the planarization layer 104. The intermediate light emitting units 106 are located on the curved portions 104a and have shapes corresponding to the curved portions 104a. The light emitting unit 106 includes a first electrode 106a, a light emitting structure 106b, and a second electrode 106c.

The first electrode 106a generally covers the curved portion 104a of the planarization layer 104 and the first electrode 106a also has a curved surface so as to correspond to the curved portion 104a of the planarization layer 104. [ The first electrode may be an anode or a cathode, and examples of the conductive material include metal materials such as aluminum, silver, magnesium, palladium, and platinum; And metal oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or zinc oxide (ZnO). These materials may be used alone or in combination. The first electrode 106a preferably has a thickness of 5 to 200 ANGSTROM so as to provide a light transmittance of greater than 50% when a metal material such as aluminum, silver, magnesium, palladium, or platinum is used. The upper part of the device emits light and the first electrode is made of a metal material such as aluminum, silver, magnesium, palladium, platinum and indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) When the same metal oxide is used in combination, it preferably has a thickness of 100 to 3000 ANGSTROM. In addition, the conductive material of the first electrode 106a may be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical vapor deposition method, or a spray pyrolysis method.

The light emitting structure 106b and the second electrode 106c are provided on the first electrode 106a and the light emitting structure 106b and the second electrode 106c are both provided with a curved surface so as to correspond to the curved portion 104a of the planarization layer 104. [

), 산화실리콘칼륨 (

), 탄산 세슘 혹은 알칼리 금속 불화물일 수 있다. 알칼리 금속 불화물로서 예를 들어 불화 리튬, 불화칼륨, 불화 세슘 중의 하나일 수 있다.The light emitting structure 106b may include an electron injecting layer, an electron transporting layer, a light emitting layer, a hole transporting layer, and a hole injecting layer, and the electron injecting layer may include lithium oxide,

), Silicon oxide (

), Cesium carbonate or an alkali metal fluoride. The alkali metal fluoride may be, for example, lithium fluoride, potassium fluoride or cesium fluoride.

The electron transporting layer needs to have a relatively high electron mobility, a relatively high glass transition temperature, and thermal stability, and should be able to form a uniform and microporous film by thermal vapor deposition. The electron transport layer is one of an oxazole derivative, a metal chelate quinoline derivative, a quinoxaline derivative, a phenazine derivative, a phenanthroline derivative, and a silicon-containing heterocyclic compound.

The light emitting layer may include an organic material or an inorganic material, and may be, for example, a small molecule material, a polymer material, or an organometallic complex compound. The light emitting layer may be formed by vacuum thermal deposition, spin coating, ink jet, laser transfer, screen printing, or the like.

The hole transport layer needs to have a relatively high electron mobility and relatively high thermal stability, and should be able to form a uniform and pinhole-free thin film by thermal vapor deposition. Examples of the hole transporting material that can be selected include Pairwise coupling diamine compounds such as TPD, TAPC, NPB, beta-NPB, alpha -NPD; Triphenylamine compounds such as TDAB, TDAPB, PTDATA, spiro-mTTB; Or a part of triarylamine polymer or carbazole-based compound.

The hole injection layer needs to have excellent energy level matching degree with the anode and the adjacent hole transporting layer, and may be CuPc, TNATA, PEDOT, but is not limited thereto. As a preferred method, the hole injecting layer may use a P-type doping structure, and the hole transporting material may be doped with an oxide such as SbCl ₅ , FeCl ₃ , iodine, F4-TCNQ or TBAHA. Of course, a structure capable of improving the injection of any other hole, such as quantum well structure, can be used.

The second electrode 106c may be a negative electrode or a positive electrode. Examples of the conductive material include metal materials such as aluminum, silver, magnesium, palladium, and platinum; Or a metal oxide such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc oxide. These materials may be used alone or in combination, and may be formed by a sputtering method, a vapor deposition method, or the like.

A pixel defining layer 108 is further provided on the planarization layer 104, and the surface of the first electrode 106a corresponding to the shape of the curved portion 104a is exposed. As the material thereof, silicon oxide, silicon nitride, silicon oxynitride, Or a combination thereof. This can be formed by, for example, physical vapor deposition, chemical vapor deposition and spin coating. The pixel defining layer 108 is formed outside the curved portion on the planarization layer 104 to isolate the plurality of light emitting units 106.

Therefore, the first electrode 106a, the light-emitting structure 106b, and the second electrode 106c in the light-emitting unit 106 all have the shape corresponding to the curved portion 104a. With this type of mounting, the light-emitting area of the light- Can be improved.

An OLED display device according to another embodiment of the present invention will now be described with reference to FIG.

As shown in FIG. 3, the figure shows an OLED display device 200 having a substrate 202. The material of the substrate 202 is the same as in the above embodiment.

A planarization layer 204 is provided on the substrate 202. The material and forming method of the planarization layer 204 are the same as those of the above embodiment.

A plurality of mutually isolated curved portions 204a are provided on the planarization layer 204. The curved portions 204a are depressions formed on the planarization layer 204, and one end face of the curved portion 204a has an arch shape on the whole. The curved portion 204a may be formed, for example, by coating a photoresist on the planarization layer 204, then performing a photo-etching process, a developing process, or an etching process on the photoresist, and baking curing, Etching or etching can be performed.

A plurality of light emitting units 206 are provided on the planarization layer 204, and each light emitting unit 206 is positioned on the curved portion 204a and has a shape corresponding to the curved portion 204a. The light emitting unit 206 includes a first electrode 206a, a light emitting structure 206b, and a second electrode 206c.

The first electrode 206a generally covers the curved portion 204a of the planarization layer 204 and the first electrode 206a also has a curved surface to correspond to the curved portion 204a of the planarization layer 204. The material of the first electrode 206a is the same as in the above embodiment.

The light emitting structure 206b and the second electrode 206c are provided on the first electrode 206a and the light emitting structure 206b and the second electrode 206c are both provided with curved surfaces so as to correspond to the curved portion 204a of the planarization layer 204. [ The materials and the forming method of the light emitting structure 206b and the second electrode 206c are the same as in the above embodiment.

The pixel defining layer 208 is further provided on the planarization layer 204 and exposes the surface of the first electrode 206a corresponding to the shape of the curved portion 204a. The pixel defining layer 208 is formed outside the curved portion on the planarization layer 204, Thereby isolating the light emitting units 206. The material of the pixel defining layer 208 and the forming method are the same as those of the above embodiment.

Therefore, the first electrode 206a, the light-emitting structure 206b, and the second electrode 206c in the light-emitting unit 206 have shapes corresponding to the curved portions 204a. With such an arrangement, the light-emitting area of the light-emitting unit 206 can be increased, Can be improved.

An OLED display device according to another embodiment of the present invention will now be described with reference to FIG.

As shown in FIG. 4, an OLED display device 300 including a substrate 302 is illustrated. The material of the substrate 302 and the forming method are the same as those of the above embodiment.

A planarization layer 304 is provided on the substrate 302. The material and forming method of the planarization layer 304 are the same as those of the above embodiment.

A plurality of mutually isolated curved portions 304a are provided on the planarization layer 304. The curved portions 304a have a multi-concave-convex type surface, and one end face of the curved portion 304a has an arched contour on the whole. For example, the curved portion 304a may be formed by subjecting the planarization layer 304 to a photoetching process, a development process, or an etching process, followed by baking curing, and photoetching or etching may be performed using a gray scale mask.

A plurality of light emitting units 306 are disposed on the planarization layer 304. The intermediate light emitting units 306 are positioned on the curved portions 304a and have a shape corresponding to the curved portions 304a. The light emitting unit 306 includes a first electrode 306a, a light emitting structure 306b, and a second electrode 306c.

The first electrode 306a generally covers the curved portion 304a of the planarization layer 304 and the first electrode 306a also has a curved surface to correspond to the curved portion 304a of the planarization layer 304. [ The material and the forming method of the first electrode 306a are the same as those of the above embodiment.

The light emitting structure 306b and the second electrode 306c are provided on the first electrode 306a and the light emitting structure 306b and the second electrode 306c are both provided with a curved surface so as to correspond to the curved portion 304a of the planarization layer 304. [ Materials and formation methods of the light emitting structure 306b and the second electrode 306c are the same as those in the above embodiment.

A pixel defining layer 308 is further provided on the planarization layer 304 and exposes the surface of the first electrode 306a corresponding to the shape of the curved portion 304a. The pixel defining layer 308 is formed outside the curved portion on the planarization layer 304, Thereby isolating the unit 306. The material of the pixel defining layer 308 and the forming method are the same as those of the above embodiment.

Accordingly, the first electrode 306a, the light-emitting structure 306b, and the second electrode 306c in the light-emitting unit 306 all have a shape corresponding to the curved portion 304a. With this type of mounting, the light-emitting area of the light- Can be improved.

Hereinafter, a method of manufacturing an OLED light emitting device according to an embodiment of the present invention will be described with reference to FIG.

As shown in Fig. 5, first, a planarization layer is formed on a substrate. The substrate may comprise a transparent insulating material composed of glass, plastic or ceramic. The planarization layer may be formed by spin coating. The material of the planarization layer may be a photoresist material or a spin on glass (SOG).

Next, a curved portion is formed on the planarization layer. The curved portion is a protruding portion formed on the flattening layer, a depressed portion or a multi-concave-convex surface, and one end face of the curved portion has an arch shape on the whole. The curved portion and the planarization layer may include the same material or may be integrally formed. The concrete steps of forming the curved portion may include the following steps. Forming a photoresist layer on the planarization layer, forming an opening in the photoresist layer by photoetching and development using a gray scale mask, and then performing a surface treatment process. That is, the curved portion is formed in such a manner that the surface of the planarizing layer exposed by the photoresist layer is subjected to baking hardening and surface treatment using the photoresist layer as a scale mask. The surface treatment process may be, for example, a plasma etching process or a plasma etching process in which an appropriate scale mask (e.g., a gray scale mask) is blended, but is not limited thereto. For example, the planarization layer may include a photoresist material, and the photoresist material may be subjected to a photoetching process using a gray scale mask, followed by a development process and a baking hardening process to form the curved portion. Among them, baking hardening is preferably carried out in a roasting furnace at 150 to 350 占 폚 to smooth the photoresist so as to form a smooth concave-convex curved surface.

Next, a first electrode is formed on the curved portion to have a shape corresponding to the curved portion. After removal of the photoresist layer, a layer of conductive material is formed on the surface of the planarization layer such that the conductive material is conformally formed over the planarization layer and is also inserted into the curved portion. Subsequently, a photoetching and etching process is performed to pattern the conductive material of this layer to form the first electrode of the light emitting device in such a manner that the conductive material is left on the partial surface of the planarization layer. The first electrode substantially covers the curved portion of the planarization layer and the first electrode has a shape corresponding to the curved portion. Here, as the material of the first electrode, metal materials such as aluminum, silver, magnesium, palladium, and platinum; Or a metal oxide such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc oxide. These materials may be used alone or in combination. The first electrode 106a preferably has a thickness of 5 to 200 angstroms so as to provide a light transmittance of greater than 50% when a metallic material such as aluminum, silver, magnesium, palladium, or platinum is used. The first electrode is made of a metal material such as aluminum, silver, magnesium, palladium, platinum and indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) When used in combination, preferably has a thickness of 100 to 3000 ANGSTROM. In addition, the conductive material of the first electrode 106a may be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical vapor deposition method, or a spray pyrolysis method.

 Next, a pixel defining layer is formed on the planarization layer. The pixel defining layer is located between adjacent curved portions and exposes the least partial surface of the first electrode. The pixel defining layer is located outside the curved portion on the planarization layer and isolates a plurality of light emitting units. The material of the pixel defining layer may be silicon oxide, silicon nitride, silicon oxynitride, organic nonconductive polymer, or a combination thereof. This can be formed by, for example, physical vapor deposition, chemical vapor deposition and spin coating. Thereafter, the pixel defining layer is patterned by using photoetching, etching, and a photoresist pattern to expose the curved surface of the anode.

), 실리콘산화칼륨 (

), 탄산 세슘 혹은 알칼리 금속 불화물인 예를 들어 불화 리튬, 불화칼륨, 불화 세슘 중의 하나일 수 있다. 전자 수송층은 비교적 높은 전자 이동도, 비교적 높은 유리 전이온도 및 열안전성을 구비하는 것을 필요로 하며, 열증착법에 의해 균일하고 미세공이 없는 박막을 형성할 수 있어야 한다. 상기 전자 수송층은 옥사졸 (oxazole,

) 유도체, 금속킬레이트 퀴놀린 유도체, 퀴녹살린 유도체, 페나진 (phenazine) 유도체, 페난트롤린(Phenanthroline) 유도체, 규소 함유 헤테로고리 화합물중의 하나이다. 발광층은 유기재료 혹은 무기재료를 포함할 수 있으며, 예를 들어 소분자 재료, 중합체 재료 혹은 유기금속착체 화합물일수 있다. 상기 발광층은 진공 열 증착, 스핀코팅, 잉크 제트, 레이저 전사 혹은 스크린 인쇄 등 방식으로 형성될 수 있다. 정공 수송층은 비교적 높은 전자 이동도, 비교적 높은 열안전성을 구비하는 것을 필요로 하며, 열증착법에 의해 균일하고 핀 홀이 없는 박막을 형성할 수 있어야 한다. 선택할 수 있는 정공 수송층 재료로서는 쌍결합된(Pairwise coupling) 디아민계 화합물인 예를 들어 TPD, TAPC, NPB, β-NPB, α-NPD; 트리페닐아민 화합물인 예를 들어 TDAB, TDAPB, PTDATA, spiro-mTTB; 혹은 일부의 트리아릴아민 중합체, 카바졸계 화합물중의 하나 일수 있다. 정공 주입층은 양극 및 인접한 정공 수송층과의 에너지 준위 정합도(matching degree)가 우수할 것을 필요로 하며, CuPc, TNATA, PEDOT일수 있지만 이에 한정되는 것이 아니다. 일종 시범적인 방안으로서는 정공 주입층은 P형 도핑구조를 사용할 수 있으며, 정공 수송 재료에 예들 들어 SbCl₅, FeCl₃, 요오드, F4-TCNQ 혹은 TBAHA와 같은 산화물을 도핑할 수 있다. 물론 양자샘구조 등 기타 임의의 정공 주입을 향상시킬 수 있는 구조를 사용할 수 있다. 제2전극의 도전재료로서는 알루미늄, 은, 마그네슘, 팔라듐, 백금 등 금속재료; 혹은 인듐 주석 산화물, 인듐 아연 산화물, 알루미늄 아연 산화물 혹은 산화아연과 같은 금속산화물 등 투명재료가 있으며, 이들을 단독으로 사용하거나 조합하여 사용할 수 있으며 스퍼터링법, 증착법 등에 의해 형성될 수 있다.Finally, the light emitting structure and the second electrode are sequentially formed on the first electrode. The light emitting structure includes an electron injection layer, an electron transporting layer, a light emitting layer, a hole transporting layer, and a hole injecting layer, and forms a light emitting structure and a cathode stacked by photoetching and etching processes. The electron injection layer may be formed of lithium oxide, lithium boron oxide (

), Potassium silicon oxide (

), Cesium carbonate, or an alkali metal fluoride, for example, lithium fluoride, potassium fluoride, or cesium fluoride. The electron transporting layer needs to have a relatively high electron mobility, a relatively high glass transition temperature, and thermal stability, and should be able to form a uniform and microporous film by thermal vapor deposition. The electron transport layer may include oxazole,

) Derivative, a metal chelate quinoline derivative, a quinoxaline derivative, a phenazine derivative, a phenanthroline derivative, and a silicon-containing heterocyclic compound. The light emitting layer may include an organic material or an inorganic material, and may be, for example, a small molecule material, a polymer material, or an organometallic complex compound. The light emitting layer may be formed by vacuum thermal deposition, spin coating, ink jet, laser transfer, screen printing, or the like. The hole transport layer needs to have a relatively high electron mobility and relatively high thermal stability, and should be able to form a uniform and pinhole-free thin film by thermal vapor deposition. Examples of the hole transporting material that can be selected include Pairwise coupling diamine compounds such as TPD, TAPC, NPB, beta-NPB, alpha -NPD; Triphenylamine compounds such as TDAB, TDAPB, PTDATA, spiro-mTTB; Or a part of triarylamine polymer or carbazole-based compound. The hole injection layer needs to have excellent energy level matching degree with the anode and the adjacent hole transporting layer, and may be CuPc, TNATA, PEDOT, but is not limited thereto. As a demonstration method, a hole injection layer can use a P-type doping structure, and a hole transport material can be doped with an oxide such as SbCl ₅ , FeCl ₃ , iodine, F ₄ -TCNQ or TBAHA. Of course, a structure capable of improving the injection of any other hole, such as quantum well structure, can be used. As the conductive material of the second electrode, metal materials such as aluminum, silver, magnesium, palladium, and platinum; Or a metal oxide such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc oxide. These materials can be used alone or in combination, and can be formed by a sputtering method, a vapor deposition method, or the like.

 According to the present invention, by providing a curved portion on the contact portion between the light emitting unit and the planarizing layer, the light emitting unit is significantly changed from the planarizing surface to the curved surface to greatly increase the aperture ratio of the organic light emitting diode, The light emission brightness of the light emitting diode can be improved, the power loss can be reduced, and the service life of the product can be extended

It will be apparent to those skilled in the art that the above-described embodiments of the present invention are merely preferred embodiments, and various substitutions, conversions, and improvements within the scope of the present invention can be carried out. Therefore, the present invention is not limited to the above embodiments, but is limited to the claims.

100, 200, 300: OLED light emitting device
1, 102, 202, 302: substrate
2, 104, 204, 304: planarization layer
104a, 204a, 304a:
3, 106, 206, and 306:
106a, 206a, and 306a:
106b, 206b, and 306b:
106c, 206c, and 306c:
4, 108, 208, 308: pixel defining layer

Claims (10)

Board;
A planarization layer positioned over the substrate and having a plurality of mutually isolated bends;
And a plurality of light emitting units located on the curved portion and having a shape corresponding to the curved portion and located on the planarization layer,
Each of the light-
A first electrode;
A light emitting structure located on the first electrode;
And a second electrode overlying the light emitting structure,
And one end face of the curved portion has an arched contour on the whole.
The method according to claim 1,
And a pixel defining layer located between the adjacent curved portions.
The method according to claim 1,
Wherein the curved portion and the planarization layer comprise the same material,
Wherein the curved portion and the planarization layer are integrally formed.
The method according to claim 1,
Wherein the curved portion is a depression formed in the planarization layer.
The method according to claim 1,
Wherein the curved portion has a multi-concave-convex surface.
Forming a planarization layer on the substrate;
Forming a plurality of mutually isolated curves on the planarization layer;
Forming a first electrode on the curved portion;
And forming a light emitting structure and a second electrode on the first electrode,
Wherein one end face of the curved portion has an arch shape on the whole.
The method according to claim 6,
Forming a pixel defining layer after forming the first electrode, and exposing a minimum partial surface of the first electrode, wherein the pixel defining layer is positioned between adjacent bent portions of the pixel defining layer .
The method according to claim 6,
Wherein the curved portion and the planarization layer comprise the same material,
Wherein the curved portion and the planarization layer are integrally formed,
Wherein forming the curved portion comprises:
Performing a photoetching process on the planarization layer using a gray scale mask;
And performing a bake hardening process on the planarization layer to obtain the curved portion.
The method according to claim 6,
Wherein the curved portion is a depression formed in the planarization layer,
Wherein forming the curved portion comprises:
Performing a photoetching process on the planarization layer using a gray scale mask;
And performing a bake hardening process on the planarization layer to obtain the curved portion.
The method according to claim 6,
Wherein the curved portion has a multi-concave-convex surface,
Wherein forming the curved portion comprises:
Performing a photoetching process on the planarization layer using a gray scale mask;
And performing a bake hardening process on the planarization layer to obtain the curved portion.

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