CN101752400B - Image display device, image display system and manufacturing method thereof - Google Patents
Image display device, image display system and manufacturing method thereof Download PDFInfo
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- CN101752400B CN101752400B CN200810182657.9A CN200810182657A CN101752400B CN 101752400 B CN101752400 B CN 101752400B CN 200810182657 A CN200810182657 A CN 200810182657A CN 101752400 B CN101752400 B CN 101752400B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
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- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
The invention discloses an image display device, an image display system and a manufacturing method thereof. The image display device is provided with a display panel, the display panel comprises a base plate with a luminous zone and a non-luminous zone, an inter-level dielectric layer arranged on the base plate, a reflecting layer which is positioned in the luminous zone and is arranged on the inter-level dielectric layer, a flat layer which is arranged on the reflecting layer and is provided with a concave-convex surface corresponding to the reflecting layer, a first electrode which is positioned on the flat layer and provided with a concave-convex surface corresponding to the reflecting layer, a pixel defining layer which is positioned on the flat layer and is exposed with the concave-convex surface of the first electrode for defining the luminous zone, and an electroluminescence layer and a second electrode which are piled up on the first electrode in sequence.
Description
Technical field
The present invention relates to the manufacturing technology of display unit, and particularly relate to the active array type array base palte (active-matrixtype array substrate) that is applicable to electroluminescent display (electroluminescene display device).
Background technology
Such as Organic Light Emitting Diode display unit (organic light emitting diode display device, OLED display device) electroluminescent display (Electro-Luminescence displaydevice), therefore the advantages such as, amount light, self luminous high-luminous-efficiency, low driving voltage slim because having and technique are simple become one of selection of slimming flat display apparatus of new generation.And according to type of drive, it can divide into passive type (PM-OLED) and active organic LED (AM-OLED) display unit substantially.
For promoting the image analytic degree of organic LED display device, need to the glorious degrees of its display pixel be improved.
Please refer to Fig. 1, disclose a kind of electroluminescent display Japanese Patent Laid-Open 2003-257662 number, comprise insulated substrate 10, gate electrode 11, gate insulation layer 12, active layer 13 (comprising channel region 13c, drain region 13d and source area 13s), stop the main members such as insulating barrier 14, interlayer insulating film 15, drain electrode 16, planarization insulating layer 17, anode 22, hole transmission layer 23, luminescent layer 24, electron transfer layer 25 and negative electrode 26.
Wherein, because planarization insulating layer 17 has concavo-convex surface, and the retes such as anode 22, hole transmission layer 23, luminescent layer 24, electron transfer layer 25 and negative electrode 26 conformably are formed on the planarization insulating layer 20, thereby these retes just also have similar in appearance to the concavo-convex rete kenel on the concavo-convex surface of planarization insulating layer 17.Have the light-emitting component that the retes such as anode 22, hole transmission layer 23, luminescent layer 24, electron transfer layer 25 and negative electrode 26 of concavo-convex rete kenel like this consist of and help its light-emitting area S
1Increase, thereby can promote its glorious degrees.
Yet anode 22 shown in Figure 1 is as the usefulness in reflector, and situation is set probably can causes high battery effect (battery effect) of hole transmission layer 23 coated anodes 22 in it caused the corrosion (corrosion) of anode 22 edges.In addition, because the concavo-convex surface of planarization insulating layer 17 tools, make that to have the rete desorption between anode 22 on it and the planarization insulating layer 17 unusual.Aforementioned two phenomenons will deteriorated light-emitting component reliability.
In addition, please refer to Fig. 2, at SID 07 DIGGEST, p173-176, title are the another kind of electroluminescent display that then discloses in the document of ＂ A 20.8-inchWXGA Full Color AMOLED Display by integrating Scattering Reflector withMicro-Bumps ＂.
In Fig. 2, loam cake substrate 66, substrate 50, sealing material 68 defines the space substantially, in this space, display pixel can be set, it is by thin-film transistor 52, dimpling piece (micro-bumps) layer 54, reflector 56, flatness layer 58, anode 60, the main members such as luminescent layer 62 and negative electrode 64 form, its Anodic 60, luminescent layer 62 and negative electrode 64 have consisted of light-emitting component, it forms utilizing emitted light 70 when operation, and provide reflectingly scattered light 72 by the effect in reflector 56, thereby helped to improve the light extraction efficiency (light extraction efficiency) of display pixel.
Because reflector 56 has concavo-convex rete kenel, therefore need to implement additional technique, to form flatness layer 58 thereon, in order to the making of follow-up light-emitting component member.In addition, because the rete of light-emitting component is planar film stratotype attitude, so its light-emitting zone less, and be unfavorable for the lifting of light extraction efficiency and the glorious degrees of display pixel.
Summary of the invention
According to embodiment, the invention provides a kind of image display, comprise display floater, wherein display floater comprises:
Substrate comprises luminous zone and non-light-emitting area; Interlayer dielectric layer is arranged on the substrate; The reflector is positioned at the luminous zone, and is arranged on the interlayer dielectric layer; Flatness layer is arranged on the reflector, and has concavo-convex surface corresponding to the reflector; The first electrode is positioned on the flatness layer, and has concavo-convex surface corresponding to the reflector; Pixel defining layer is positioned on the flatness layer, and exposes the concavo-convex surface of the first electrode, to define the luminous zone; And electroluminescence layer and the second electrode, sequentially be stacked on the first electrode.
According to another embodiment, the invention provides a kind of manufacture method of image display, comprising:
Form interlayer dielectric layer on substrate, wherein substrate comprises luminous zone and non-light-emitting area; Form the reflector in the luminous zone, and be arranged on the interlayer dielectric layer; Form flatness layer on the reflector, and have concavo-convex surface corresponding to the reflector; Form the first electrode on flatness layer, and have concavo-convex surface corresponding to the reflector; Form pixel defining layer on flatness layer, and by exposing the concavo-convex surface of the first electrode, to define the luminous zone; And sequentially form electroluminescence layer and the second electrode on the first electrode.
In another embodiment, the invention provides a kind of image display system, comprising:
Image display as the aforementioned; And input unit, be coupled to image display, with control image display show image.
For above and other purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate accompanying drawing, be described in detail below.
Description of drawings
Fig. 1 has shown a kind of known electroluminescent display;
Fig. 2 has shown another kind of known electroluminescent display;
Fig. 3 a～3f is a series of schematic diagrames, has illustrated respectively the section situation of display floater in the different fabrication stages according to the embodiment of the invention; And
Fig. 4 is schematic diagram, in order to the image display system of explanation according to the embodiment of the invention.
Description of reference numerals
10～insulated substrate; 11～gate electrode;
12～gate insulation layer; 13～active layer;
13c～channel region; 13d～drain region;
13s～source area; 14～stop insulating barrier;
15～interlayer insulating film; 16～drain electrode;
17～planarization insulating layer; 22～anode;
23～hole transmission layer; 24～luminescent layer;
25～electric transmission; 26～negative electrode;
50～substrate; 52～thin-film transistor;
54～dimpling piece layer; 56～reflector;
58～flatness layer; 60～anode;
62～luminescent layer; 64～negative electrode;
66～loam cake substrate; 68～sealing material;
70～utilizing emitted light; 72～scattered light;
100～display floater; 102～substrate;
104～resilient coating; 106～gate dielectric layer;
108～gate electrode; 110～interlayer dielectric layer;
Opening in 112～interlayer dielectric layer; 114a～conductive layer;
114b～reflector; 116～flatness layer;
118～photoresist layer; 120～process of surface treatment;
122～concavo-convex surface; 124～photoresist layer;
Opening in 126～photoresist layer; Contact openings in 128～flatness layer;
130～anode; 132～pixel defining layer;
134～electroluminescence layer; 136～negative electrode;
138～light direction; 140～light-emitting component;
150～thin-film transistor; 300～image display;
400～input unit; 500～image display system;
S
1～light-emitting area; P～light-emitting zone;
S/D～source/drain regions.
Embodiment
According to image display of the present invention and manufacture method will cooperate Fig. 3 a～3f and hereinafter to be described further, it is applicable to the making such as the display unit of electroluminescent display.
According to image display of the present invention, can set up the reflector by concavo-convexization light-emitting component and in the light-emitting component below, to improve coupling efficiency (light out coupling efficiency) and the light extraction efficiency of light-emitting component.In addition, according to light-emitting component setting of the present invention, help the corrosion situation that reduces even avoid battery effect and anode and reflector to meet with.So be conducive to the image analytic degree of image display system and the lifting in useful life.
Please refer to the profile of Fig. 3 a～3f, so that the manufacturing of the display floater 100 of image display to be described according to the embodiment of the invention.
Please refer to Fig. 3 a, it illustrates display floater (array panel) 100, has substrate 102.Be formed with resilient coating 104 and the thin-film transistor 150 that is arranged on the resilient coating 104 on the substrate 102.Thin-film transistor 150 comprises gate dielectric layer 106, two source/drain regions S/D, be arranged at the channel region between source/drain regions S/D and be arranged at gate electrode 108 on the gate dielectric layer 106.At this, gate dielectric layer 106 is arranged on the whole substrate 102 and has covered resilient coating 104.Then, at thin-film transistor 150 and resilient coating 104 interlayer dielectric layer 110 is set, makes the substrate 102 that comprises thin-film transistor 150 have substantially smooth surface, in order to the enforcement of subsequent technique.
Please refer to Fig. 3 b, then by photoetching and etch process, form two openings 112 that pass interlayer dielectric layer 110.These openings 112 expose respectively the part of each source/drain regions S/D of thin-film transistor 150.Follow the smooth deposition layer of conductive material in the top of interlayer dielectric layer 110 with covering, and this electric conducting material is inserted in each opening 112.Then by photoetching and etch process, with the above-mentioned electric conducting material of patterning, form conductive layer 114a and the 114b of a plurality of patternings at interlayer dielectric layer 110.Wherein, conductive layer 114a aligned in general arranges and inserts in the opening 112 in source/drain regions S/D, and then couples with the source/drain regions S/D of thin-film transistor 150.Conductive layer 114b then is formed on the part of the other substrate of adjacent conductive layer 114a, with the usefulness (being called below reflector 114b) as the reflector, it is cover film transistor 150 not, and has flat surfaces, and and conductive layer 114a between for being electrically insulated.Then such as containing the light-proof material of the high reflectances such as alloy of a small amount of one or more other elements for aluminium, silver, magnesium, palladium, platinum or its, its light reflectivity preferably is higher than 80% to the material of reflector 114b.
Please refer to Fig. 3 c, the smooth flatness layer 116 that forms on conductive layer 114a and reflector 114b with covering.Flatness layer 116 can be by forming such as method of spin coating.The material of flatness layer 116 is the dielectric material of for example spin-coating glass (spin on glass, SOG).Then on flatness layer 116, form photoresist layer 118, and by photoetching and developing process, at photoresist layer 118 interior formation opening OP1, opening OP1 aligned in general reflector 114b and arrange and expose flatness layer 116 parts that are positioned at reflector 114b top.Then implement process of surface treatment 120, adopting photoresist layer 118 is mask, and then surface treatment is the surface of the flatness layer 116 that exposes of photoresist layer 118, and makes it roughening and form concavo-convex surperficial 122.Above-mentioned process of surface treatment 120 can be such as plasma etch process or is the manufacture methods such as plasma etch process of the suitable mask of collocation.
Please refer to Fig. 3 d, after removing photoresist layer 118, then on flatness layer 116, form another photoresist layer 124, and by photoetching and developing process, at another opening 126 of photoresist layer 124 interior formation.Opening 126 penetrates photic resist layer 124, and aligned in general is in one of source/drain regions S/D of thin-film transistor 150, and for example opening 126 aligned in general are in the source/drain regions S/D of near reflection layer 114b.Then, implementing etch process, for example is dry etching process, take photoresist layer 124 as etching mask, the interlayer dielectric layer 116 that exposes for opening 126 and a part of exposing conductive layer 114a are removed in etching, and then in flatness layer 116 interior formation contact openings 128.That is, contact openings 128 penetrates flatness layer 116.
Please refer to Fig. 3 e, after removing photoresist layer 124, then form layer of conductive material in the surface of flatness layer 116, above-mentioned electric conducting material conformably is formed on the flatness layer 116 and inserts in the contact openings 128, the conductive layer 114a that the entity contact is exposed for contact openings 128.Then, implement photoetching and etch process with this layer of patterning electric conducting material, stayed electric conducting material at the part surface of flatness layer 116, with the anode 130 as light-emitting component.Anode 130 has covered the wavy surface 122 of flatness layer 116 substantially, and it is corresponding with the wavy surface 122 of flatness layer 116 relatively to make anode 130 also have a concavo-convex surface.In addition, anode 130 is inserted in the contact openings 128, by coupling and the source/drain regions S/D of electrical contact thin-film transistor 150 with conductive layer 114a.At this, the included electric conducting material of anode 130 is such as being the metal materials such as aluminium, silver, magnesium, palladium, platinum, or be the light transmissive materials such as metal oxide of indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or zinc oxide (ZnO), it can use individually or in combination.When anode 130 uses as during as metal materials such as aluminium, silver, magnesium, palladium, platinum, its preferably have 5～200 dusts (
) thickness, so that the light transmittance greater than 50% to be provided.In addition, the electric conducting material of anode 130 can form by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
Follow compliance terrain imaging element definition layer 132 on anode 130, its material for example is silica, silicon nitride, nitrogen oxide silicon, organic non-conductive polymer or its combination, and can form by the manufacture method such as physical vaporous deposition, chemical vapour deposition technique and rotary coating.Then, by photoetching and etch process and cooperate the use of photoresist pattern (not shown), with this pixel defining layer 132 of patterning and the concavo-convex surface of exposing anode 130, and then define light-emitting zone P, light-emitting zone P take exterior domain then as non-light-emitting area.Meaning namely, according to Fig. 3 e, reflector 114b only is arranged at light-emitting zone P, and thin-film transistor 150, conductive layer 114a are arranged at non-luminous region, wherein reflector 114b and conductive layer 114a are insulated by flatness layer 116.
Please refer to Fig. 3 f, then sequentially smooth formation one deck electroluminescence material and layer of conductive material on pixel defining layer 132 and anode 130 with covering, and by photoetching and etch process, take on the anode 130 that is exposed as light-emitting zone P and on the partial pixel definition layer 132 of contiguous light-emitting zone P, form stacking electroluminescence layer 134 and negative electrode 136, its Anodic 130 and electroluminescence layer 134 formed thereon have just consisted of light-emitting component 140 with negative electrode 136, and wherein electroluminescence layer 134 all has concavo-convex surface corresponding to reflector 114b with negative electrode 136.138 of labels have illustrated the main light direction of this light-emitting component 140, and it is the direction away from substrate 102.
Electroluminescence layer 134 can comprise organic material or inorganic material, for example be small molecule material, polymeric material or organic metal misfit thing, it can form by modes such as thermal vacuum evaporation, rotary coating, ink-jet or screen paintings, the electric conducting material of negative electrode 136 is then such as the metal material of aluminium, silver, magnesium, palladium, platinum, or be the light transmissive materials such as metal oxide of indium tin oxide, indium-zinc oxide, aluminium zinc oxide or zinc oxide, it can use individually or in combination, and can form by modes such as sputter or evaporations.
Shown in Fig. 3 f, the members such as the anode 130 in the light-emitting component 140, electroluminescence layer 134 and negative electrode 136 all have concavo-convex rete kenel, and are provided with accordingly the reflector 114b with flat surfaces in light-emitting component 140 belows.By kenel so is set, help to promote light-emitting component 140 in coupling efficiency, light extraction efficiency, glorious degrees and the angle of visibility of main light direction 138.
In addition, luminescent layer 134 parts are arranged at the edge that can not coat anode 130 below it on the pixel defining layer 132, and it is not connected with reflector 114b.Therefore, light-emitting component 140 interior electrodes arrange situation and can't produce battery effect, damage and meet with the electrode of not expecting as can be not as shown in Figure 1, can promote the reliability of using the display unit shown in Fig. 3 f.
Moreover, because reflector 114b is embedded between flatness layer 116 and the interlayer dielectric layer 110, meet with the rete desorption of not expecting as can be not as shown in Figure 1, can promote the reliability of the display unit of application shown in Fig. 3 f.
In addition, because reflector 114b can make formation simultaneously with the conductive layer 114a that couples source/drain regions S/D, and covered by flatness layer 116 simultaneously, therefore do not need to adopt as shown in Figure 2 additional technical steps to form reflector and flatness layer, helped to simplify the manufacture method of array base palte.
Fig. 4 has illustrated image display system 500, and it has comprised image display 300 and input unit 400 main elements such as grade.Wherein, image display 300 comprises the display floater 100 shown in Fig. 3 f, and is applicable to the application (illustrate be image display system 500 at this) of multiple electronic installation.Moreover input unit 400 can couple with image display 300, sentences the generation image so that suitable signal (for example signal of video signal) to image display panel 300 to be provided.500 of image display systems are such as being the electronic installations such as mobile phone, digital camera, personal digital assistant PDA, notebook computer, desktop computer, TV, vehicle display, portable DVD player, global positioning system, digital frame or navigation screen.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is when looking accompanying being as the criterion that claim defines.
Claims (10)
1. an image display comprises display floater, and this display floater comprises:
Substrate comprises luminous zone and non-light-emitting area;
Interlayer dielectric layer is arranged on this substrate;
The reflector is positioned at this luminous zone, and is arranged on this interlayer dielectric layer;
Flatness layer is arranged on this reflector, and has concavo-convex surface corresponding to this reflector, wherein this flatness layer this reflector that is electrically insulated;
The first electrode is positioned on this flatness layer, and has concavo-convex surface corresponding to this reflector;
Pixel defining layer is positioned on this flatness layer, and exposes this concavo-convex surface of this first electrode, to define this luminous zone; And
Electroluminescence layer and the second electrode sequentially are stacked on this first electrode.
2. image display as claimed in claim 1 also comprises:
Thin-film transistor has source/drain regions, and is positioned at this non-light-emitting area, and is arranged under this interlayer dielectric layer; And
Conductive layer is positioned at this non-light-emitting area, and is arranged on this interlayer dielectric layer, wherein this interlayer dielectric layer has the first opening, this conductive layer couples this source/drain regions by this first opening, and this flatness layer has the second opening, and this first electrode couples this conductive layer by this second opening.
3. image display as claimed in claim 2, wherein this conductive layer and this reflector comprise same material.
4. image display as claimed in claim 1, wherein this first electrode is anode, this second electrode is negative electrode, and this first electrode, this electroluminescence layer and this second electrode consist of electroluminescence element.
5. image display as claimed in claim 1, wherein this reflector has flat surfaces.
6. the manufacture method of an image display comprises:
Form interlayer dielectric layer on substrate, wherein this substrate comprises luminous zone and non-light-emitting area;
Form the reflector in this luminous zone, and be arranged on this interlayer dielectric layer;
Form flatness layer on this reflector;
Formation has the photoresist of opening and carves the agent layer on this flatness layer, and wherein this opening aligned in general arranges and expose the part end face of this flatness layer that is positioned at this top, reflector in this reflector;
Adopt this photoresist to carve agent layer as mask, this part end face of this flatness layer that this opening is exposed carries out process of surface treatment, and then forms concavo-convex surface on this flatness layer;
Remove this photoresist and carve the agent layer;
Form the first electrode on this flatness layer, and have concavo-convex surface corresponding to this reflector;
Form pixel defining layer on this flatness layer, and by exposing this concavo-convex surface of this first electrode, to define this luminous zone; And
Sequentially form electroluminescence layer and the second electrode on this first electrode.
7. the manufacture method of image display as claimed in claim 6 also comprises:
Form thin-film transistor in this non-light-emitting area, and be arranged under this interlayer dielectric layer; And
Form conductive layer in this non-light-emitting area, and be arranged on this interlayer dielectric layer, wherein, this interlayer dielectric layer has the first opening, by this first opening, couple the source/drain regions of this conductive layer and this thin-film transistor, and this flatness layer has the second opening, this first electrode couples this conductive layer by this second opening.
8. the manufacture method of image display as claimed in claim 7, wherein this conductive layer and this reflector form simultaneously and are insulated by this flatness layer.
9. the manufacture method of image display as claimed in claim 6, wherein this concavo-convex surface of this flatness layer forms via process of surface treatment.
10. image display system comprises:
Image display as claimed in claim 1; And
Input unit couples this image display, to control this image display show image.
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| KR101156447B1 (en) * | 2010-12-14 | 2012-06-18 | 삼성모바일디스플레이주식회사 | Capacitor device and the display apparatus comprising the same |
| CN102201546A (en) * | 2011-05-17 | 2011-09-28 | 太原理工大学 | Organic electroluminescent device with boss interface structure and preparation method thereof |
| CN103151369B (en) * | 2013-02-06 | 2016-01-06 | 京东方科技集团股份有限公司 | A kind of dot structure and preparation method thereof |
| US9647044B2 (en) | 2014-11-26 | 2017-05-09 | Boe Technology Group Co., Ltd. | Organic light-emitting diode array substrate and manufacturing method thereof, and display device |
| CN104362169B (en) * | 2014-11-26 | 2017-10-10 | 京东方科技集团股份有限公司 | A kind of organic LED array substrate and preparation method thereof, display device |
| CN104867958B (en) * | 2015-04-01 | 2017-12-08 | 京东方科技集团股份有限公司 | Organic electroluminescent display substrate and preparation method thereof and display device |
| CN104952884B (en) * | 2015-05-13 | 2019-11-26 | 深圳市华星光电技术有限公司 | AMOLED back board structure and preparation method thereof |
| CN105161632A (en) * | 2015-08-03 | 2015-12-16 | 深圳市华星光电技术有限公司 | Organic electroluminescent device structure and preparation method thereof |
| US10008697B2 (en) * | 2015-08-31 | 2018-06-26 | Lg Display Co., Ltd. | Organic light emitting diode display device |
| CN108370621B (en) * | 2015-12-03 | 2019-09-06 | 夏普株式会社 | Organnic electroluminescent device and its manufacturing method, lighting device and display device |
| CN106373985A (en) * | 2016-10-28 | 2017-02-01 | 昆山国显光电有限公司 | Organic light emitting diode display device and preparation method |
| US20190393285A1 (en) * | 2017-01-26 | 2019-12-26 | Sony Corporation | Display device, electronic device, and manufacturing method of display device |
| CN106953025B (en) * | 2017-02-22 | 2018-10-12 | 信利（惠州）智能显示有限公司 | The manufacturing method of organic light-emitting display device |
| CN107275500A (en) * | 2017-06-12 | 2017-10-20 | 京东方科技集团股份有限公司 | A kind of organic luminescent device and preparation method thereof |
| CN107316949B (en) | 2017-07-11 | 2020-07-31 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN107731881A (en) * | 2017-11-06 | 2018-02-23 | 武汉华星光电半导体显示技术有限公司 | Flexible display panels and its manufacture method, flexible display apparatus |
| JP7102131B2 (en) * | 2017-12-01 | 2022-07-19 | キヤノン株式会社 | Top emission type organic EL element and its manufacturing method |
| CN109192765A (en) * | 2018-09-17 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | A kind of organic light emitting diode display and preparation method thereof |
| CN109256052B (en) * | 2018-09-21 | 2020-06-02 | 京东方科技集团股份有限公司 | Electronic equipment, display panel, driving back plate and manufacturing method thereof |
| CN110767713A (en) * | 2019-03-08 | 2020-02-07 | 云谷（固安）科技有限公司 | Display device, OLED substrate and OLED light-transmitting substrate thereof |
| CN110246884B (en) * | 2019-06-25 | 2021-08-06 | 京东方科技集团股份有限公司 | Preparation method of array substrate, array substrate and display panel |
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