CN103003936A - 使用脉冲的uv光源来涂覆晶片背面的方法 - Google Patents
使用脉冲的uv光源来涂覆晶片背面的方法 Download PDFInfo
- Publication number
- CN103003936A CN103003936A CN2011800281230A CN201180028123A CN103003936A CN 103003936 A CN103003936 A CN 103003936A CN 2011800281230 A CN2011800281230 A CN 2011800281230A CN 201180028123 A CN201180028123 A CN 201180028123A CN 103003936 A CN103003936 A CN 103003936A
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- coating composition
- acrylate
- resin
- coating
- semiconductor wafer
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Paints Or Removers (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Formation Of Insulating Films (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
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US35258410P | 2010-06-08 | 2010-06-08 | |
US61/352,584 | 2010-06-08 | ||
PCT/US2011/039044 WO2011156221A2 (en) | 2010-06-08 | 2011-06-03 | Wafer backside coating process with pulsed uv light source |
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CN103003936A true CN103003936A (zh) | 2013-03-27 |
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CN2011800281230A Pending CN103003936A (zh) | 2010-06-08 | 2011-06-03 | 使用脉冲的uv光源来涂覆晶片背面的方法 |
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EP (1) | EP2580777A4 (zh) |
JP (1) | JP5654672B2 (zh) |
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CN (1) | CN103003936A (zh) |
TW (1) | TWI456012B (zh) |
WO (1) | WO2011156221A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104162502A (zh) * | 2013-05-16 | 2014-11-26 | 展晶科技(深圳)有限公司 | 光固化涂层的方法 |
CN112837844A (zh) * | 2021-03-01 | 2021-05-25 | 佛山市瑞纳新材科技有限公司 | 一种有双重固化性能的hjt低温固化银浆及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9266192B2 (en) | 2012-05-29 | 2016-02-23 | Electro Scientific Industries, Inc. | Method and apparatus for processing workpieces |
US9230888B2 (en) * | 2013-02-11 | 2016-01-05 | Henkel IP & Holding GmbH | Wafer back side coating as dicing tape adhesive |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6833629B2 (en) * | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
JP2006269887A (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co Ltd | 半導体用接着フィルム及びこれを用いた半導体装置 |
US20070085216A1 (en) * | 2005-09-27 | 2007-04-19 | Infineon Technologies Ag | Semiconductor device having a semiconductor chip, and method for the production thereof |
CN1317350C (zh) * | 2002-11-25 | 2007-05-23 | 亨凯尔公司 | B阶小片连接粘合剂 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7008A (en) * | 1850-01-08 | Improvement in alloys for points of lightning-rods | ||
US4010A (en) * | 1845-04-22 | Island | ||
JPS54105774A (en) | 1978-02-08 | 1979-08-20 | Hitachi Ltd | Method of forming pattern on thin film hybrid integrated circuit |
WO1984000506A1 (en) | 1982-07-23 | 1984-02-16 | Xenon Corp | Photomagnetic catalysis |
JPS5959751A (ja) * | 1982-09-30 | 1984-04-05 | Dainippon Ink & Chem Inc | 粉体塗料用組成物 |
JPH0339378A (ja) | 1989-07-05 | 1991-02-20 | Hitachi Chem Co Ltd | 接着剤組成物,電子部品のプリント基板への固定法および集積回路板の製造法 |
CA2038117A1 (en) | 1990-03-29 | 1991-09-30 | Mahfuza B. Ali | Controllable radiation curable photoiniferter prepared adhesives for attachment of microelectronic devices and a method of attaching microelectronic devices therewith |
EP0492828A1 (en) * | 1990-12-26 | 1992-07-01 | Dow Corning Corporation | Mixture of adhesion additives useful in UV curable compositions and compositions containing same |
US6674158B2 (en) * | 1998-09-03 | 2004-01-06 | Micron Technology, Inc. | Semiconductor die package having a UV cured polymeric die coating |
US6211320B1 (en) * | 1999-07-28 | 2001-04-03 | Dexter Corporation | Low viscosity acrylate monomers formulations containing same and uses therefor |
US7176044B2 (en) * | 2002-11-25 | 2007-02-13 | Henkel Corporation | B-stageable die attach adhesives |
KR100517075B1 (ko) * | 2003-08-11 | 2005-09-26 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
JP4401912B2 (ja) | 2003-10-17 | 2010-01-20 | 学校法人早稲田大学 | 半導体多層配線板の形成方法 |
JP3929966B2 (ja) | 2003-11-25 | 2007-06-13 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP2005218921A (ja) * | 2004-02-03 | 2005-08-18 | Keyence Corp | 紫外線照射装置及び紫外線照射方法 |
KR100555559B1 (ko) | 2004-03-03 | 2006-03-03 | 삼성전자주식회사 | 백 그라인딩 공정용 표면 보호 테이프를 이용하여 다이싱공정을 수행하는 반도체 장치의 제조 방법 |
JP2005268425A (ja) | 2004-03-17 | 2005-09-29 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2005320491A (ja) | 2004-05-11 | 2005-11-17 | Hitachi Chem Co Ltd | 接着剤組成物、それを用いたフィルム状接着剤及び回路接続材料、並びに回路部材の接続構造及びその製造方法 |
TWI387631B (zh) | 2004-05-18 | 2013-03-01 | Hitachi Chemical Co Ltd | 黏著片與使用此黏著片之半導體裝置以及其製造方法 |
US7560519B2 (en) | 2004-06-02 | 2009-07-14 | Lord Corporation | Dual-stage wafer applied underfills |
KR100618837B1 (ko) | 2004-06-22 | 2006-09-01 | 삼성전자주식회사 | 웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법 |
JP2006012914A (ja) | 2004-06-22 | 2006-01-12 | Canon Inc | 集積回路チップの製造方法及び半導体装置 |
JP2006100728A (ja) | 2004-09-30 | 2006-04-13 | Nitto Denko Corp | 保護テープ剥離方法およびこれを用いた装置 |
JP2007012810A (ja) | 2005-06-29 | 2007-01-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
JP5109239B2 (ja) | 2005-07-05 | 2012-12-26 | 日立化成工業株式会社 | 粘接着シート、粘接着シートの製造方法及び半導体装置の製造方法 |
CN101218539B (zh) | 2005-07-05 | 2011-07-13 | 日立化成工业株式会社 | 感光性粘接剂组合物、以及使用其所得粘接薄膜、粘接薄片、贴有粘接剂层的半导体晶圆、半导体装置及电子零件 |
JP5011804B2 (ja) | 2005-09-06 | 2012-08-29 | 日立化成工業株式会社 | 回路接続材料、接続体及び回路部材の接続方法 |
KR20070066929A (ko) | 2005-12-22 | 2007-06-27 | 닛토덴코 가부시키가이샤 | 제거가능한 수분산성 아크릴 접착제 조성물 및 접착 시트 |
US7494900B2 (en) | 2006-05-25 | 2009-02-24 | Electro Scientific Industries, Inc. | Back side wafer dicing |
US7482251B1 (en) | 2006-08-10 | 2009-01-27 | Impinj, Inc. | Etch before grind for semiconductor die singulation |
JP5627893B2 (ja) | 2007-01-31 | 2014-11-19 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co.KGaA | 接着剤組成物の使用 |
US20090104448A1 (en) * | 2007-10-17 | 2009-04-23 | Henkel Ag & Co. Kgaa | Preformed adhesive bodies useful for joining substrates |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6833629B2 (en) * | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
CN1317350C (zh) * | 2002-11-25 | 2007-05-23 | 亨凯尔公司 | B阶小片连接粘合剂 |
JP2006269887A (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co Ltd | 半導体用接着フィルム及びこれを用いた半導体装置 |
US20070085216A1 (en) * | 2005-09-27 | 2007-04-19 | Infineon Technologies Ag | Semiconductor device having a semiconductor chip, and method for the production thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104162502A (zh) * | 2013-05-16 | 2014-11-26 | 展晶科技(深圳)有限公司 | 光固化涂层的方法 |
CN112837844A (zh) * | 2021-03-01 | 2021-05-25 | 佛山市瑞纳新材科技有限公司 | 一种有双重固化性能的hjt低温固化银浆及其制备方法 |
CN112837844B (zh) * | 2021-03-01 | 2022-07-15 | 佛山市瑞纳新材科技有限公司 | 一种有双重固化性能的hjt低温固化银浆及其制备方法 |
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KR20130079478A (ko) | 2013-07-10 |
US8791033B2 (en) | 2014-07-29 |
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US20130099396A1 (en) | 2013-04-25 |
TWI456012B (zh) | 2014-10-11 |
JP2013535098A (ja) | 2013-09-09 |
JP5654672B2 (ja) | 2015-01-14 |
WO2011156221A2 (en) | 2011-12-15 |
EP2580777A2 (en) | 2013-04-17 |
EP2580777A4 (en) | 2015-06-03 |
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