CN103003345B - 用于旋转电机的绝缘 - Google Patents
用于旋转电机的绝缘 Download PDFInfo
- Publication number
- CN103003345B CN103003345B CN201180036964.6A CN201180036964A CN103003345B CN 103003345 B CN103003345 B CN 103003345B CN 201180036964 A CN201180036964 A CN 201180036964A CN 103003345 B CN103003345 B CN 103003345B
- Authority
- CN
- China
- Prior art keywords
- silane
- trimethoxy silane
- dimethoxysilane
- trimethoxy
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title abstract description 31
- 239000002105 nanoparticle Substances 0.000 claims abstract description 33
- 239000010445 mica Substances 0.000 claims abstract description 22
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- 239000000945 filler Substances 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims description 19
- XUCHXOAWJMEFLF-UHFFFAOYSA-N bisphenol F diglycidyl ether Chemical compound C1OC1COC(C=C1)=CC=C1CC(C=C1)=CC=C1OCC1CO1 XUCHXOAWJMEFLF-UHFFFAOYSA-N 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 239000003153 chemical reaction reagent Substances 0.000 claims description 7
- 150000008065 acid anhydrides Chemical class 0.000 claims description 6
- 239000003085 diluting agent Substances 0.000 claims description 6
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 5
- -1 m-aminophenyl Chemical group 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- NESLVXDUKMNMOG-UHFFFAOYSA-N triethoxy-(propyltetrasulfanyl)silane Chemical compound CCCSSSS[Si](OCC)(OCC)OCC NESLVXDUKMNMOG-UHFFFAOYSA-N 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- XWHJQTQOUDOZGR-UHFFFAOYSA-N hex-1-enyl(trimethoxy)silane Chemical compound CCCCC=C[Si](OC)(OC)OC XWHJQTQOUDOZGR-UHFFFAOYSA-N 0.000 claims description 3
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 claims description 3
- PQWKLUKTIZEJHB-UHFFFAOYSA-N 2-(hexan-2-yloxymethyl)oxirane Chemical compound CCCCC(C)OCC1CO1 PQWKLUKTIZEJHB-UHFFFAOYSA-N 0.000 claims description 2
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 claims description 2
- WGRZHLPEQDVPET-UHFFFAOYSA-N 2-methoxyethoxysilane Chemical compound COCCO[SiH3] WGRZHLPEQDVPET-UHFFFAOYSA-N 0.000 claims description 2
- MZWXWSVCNSPBLH-UHFFFAOYSA-N 3-(3-aminopropyl-methoxy-methylsilyl)oxypropan-1-amine Chemical compound NCCC[Si](C)(OC)OCCCN MZWXWSVCNSPBLH-UHFFFAOYSA-N 0.000 claims description 2
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 2
- MLOKHANBEXWBKS-UHFFFAOYSA-N 3-triacetyloxysilylpropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](OC(C)=O)(OC(C)=O)OC(C)=O MLOKHANBEXWBKS-UHFFFAOYSA-N 0.000 claims description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 2
- RXQWVPDEEIRORY-UHFFFAOYSA-N C(C(C)C)[Si](OC)(OC)C.[Cl] Chemical compound C(C(C)C)[Si](OC)(OC)C.[Cl] RXQWVPDEEIRORY-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 claims description 2
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 claims description 2
- RMKZLFMHXZAGTM-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethyl prop-2-enoate Chemical compound CCC[Si](OC)(OC)OCOC(=O)C=C RMKZLFMHXZAGTM-UHFFFAOYSA-N 0.000 claims description 2
- ZPECUSGQPIKHLT-UHFFFAOYSA-N bis(ethenyl)-dimethoxysilane Chemical compound CO[Si](OC)(C=C)C=C ZPECUSGQPIKHLT-UHFFFAOYSA-N 0.000 claims description 2
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 claims description 2
- WEPTUKVCIZSMNO-UHFFFAOYSA-N butyl-dimethoxy-propylsilane Chemical group CCCC[Si](OC)(OC)CCC WEPTUKVCIZSMNO-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 claims description 2
- SJJCABYOVIHNPZ-UHFFFAOYSA-N cyclohexyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C1CCCCC1 SJJCABYOVIHNPZ-UHFFFAOYSA-N 0.000 claims description 2
- QEPVYYOIYSITJK-UHFFFAOYSA-N cyclohexyl-ethyl-dimethoxysilane Chemical compound CC[Si](OC)(OC)C1CCCCC1 QEPVYYOIYSITJK-UHFFFAOYSA-N 0.000 claims description 2
- ZJJUBGNGLAAGQS-UHFFFAOYSA-N cyclopentyl(dimethoxy)silane Chemical compound CO[SiH](OC)C1CCCC1 ZJJUBGNGLAAGQS-UHFFFAOYSA-N 0.000 claims description 2
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 claims description 2
- ZVMRWPHIZSSUKP-UHFFFAOYSA-N dicyclohexyl(dimethoxy)silane Chemical group C1CCCCC1[Si](OC)(OC)C1CCCCC1 ZVMRWPHIZSSUKP-UHFFFAOYSA-N 0.000 claims description 2
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 claims description 2
- NFCHYERDRQUCGJ-UHFFFAOYSA-N dimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[SiH](OC)CCCOCC1CO1 NFCHYERDRQUCGJ-UHFFFAOYSA-N 0.000 claims description 2
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 claims description 2
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 claims description 2
- WQTNGCZMPUCIEX-UHFFFAOYSA-N dimethoxy-methyl-prop-2-enylsilane Chemical compound CO[Si](C)(OC)CC=C WQTNGCZMPUCIEX-UHFFFAOYSA-N 0.000 claims description 2
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 claims description 2
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 claims description 2
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 claims description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 2
- 125000005456 glyceride group Chemical group 0.000 claims description 2
- RSKGMYDENCAJEN-UHFFFAOYSA-N hexadecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OC)(OC)OC RSKGMYDENCAJEN-UHFFFAOYSA-N 0.000 claims description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 2
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- GOWYWDDPOBCVFH-UHFFFAOYSA-N methoxy-methyl-propyl-(trifluoromethoxy)silane Chemical compound FC(O[Si](OC)(C)CCC)(F)F GOWYWDDPOBCVFH-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 claims description 2
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 claims description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- PSWKAZOCOHMXCW-UHFFFAOYSA-N tert-butyl-ethyl-dimethoxysilane Chemical compound CC[Si](OC)(OC)C(C)(C)C PSWKAZOCOHMXCW-UHFFFAOYSA-N 0.000 claims description 2
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 claims description 2
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 claims description 2
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 claims description 2
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 6
- 238000003860 storage Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005470 impregnation Methods 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- 230000009257 reactivity Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 10
- 230000003245 working effect Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000005051 trimethylchlorosilane Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- BVXLLZBMCZWPGZ-UHFFFAOYSA-N [SiH4].[Br-].C[NH+](C)C Chemical compound [SiH4].[Br-].C[NH+](C)C BVXLLZBMCZWPGZ-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Inorganic Insulating Materials (AREA)
- Organic Insulating Materials (AREA)
- Insulation, Fastening Of Motor, Generator Windings (AREA)
- Insulating Bodies (AREA)
Abstract
本发明涉及以含有纳米颗粒填料的浸渍树脂为基础的用于旋转电机的具有提高的电使用寿命的基于云母的绝缘。根据本发明,所述浸渍树脂和纳米颗粒填料在反应活性、粘度和粒度上针对用于云母浸渍的要求进行调准,使得在工艺进行(浸渍、聚合、贮存)时的反应机理至少不会被所述纳米颗粒显著影响。
Description
本发明涉及以含有纳米颗粒填料的浸渍树脂为基础的用于旋转电机的绝缘。
在旋转电机,例如发动机或发电机中,绝缘体系的可靠性决定性地负责其操作安全性。绝缘体系的任务是使电导体(导线、线圈、棒)持久地相互绝缘和与定子铁芯或周围环境绝缘。在高电压绝缘内部区分为绕组线段之间的绝缘(绕组线段绝缘)、导体或线匝之间的绝缘(导体或线匝绝缘)和在槽铣头和绕组端部区域中导体和外壳电位(Massepotenzial)之间的绝缘(主绝缘)。主绝缘的厚度既与机器的额定电压匹配,又与操作条件和制备条件匹配。能量生产设备的竞争力、其分布和应用决定性地取决于绝缘所使用的材料和所应用的技术。
这种带电的绝缘体中的基本问题在于所谓的部分放电诱发的腐蚀,由其形成的所谓的“树形”通道,它们最终导致绝缘体被电击穿。在此背景情况下,现有技术是,使用基于云母的绝缘用于持久地将在旋转机器(发动机、发电机、涡轮发电机、水力发电机、风力发电机)中的定子的带电压导体绝缘。现今在高压和中压发动机和发电机中使用层状的云母绝缘。其中由绝缘的绕组线段制成的成型线圈用云母带缠绕并优先地在真空-压力-工艺(VPI=真空压力浸渍)中用合成树脂浸渍。在此过程中,云母以云母纸的形式使用,其中在浸渍意义上,在云母纸中各个颗粒之间的空隙用树脂填充。浸渍树脂和云母的载体材料的复合体提供了绝缘的机械强度。耐电强度由所用云母的大量固-固界面得来。所生成的有机和无机材料层形成微观界面,其对部分放电和热应力的耐受性由云母片的性质确定。绝缘中甚至最小的空隙也必须通过复杂的VPI工艺用树脂填充,以便将内部的气-固界面的数目最小化。
为了进一步改善耐受性,已描述使用纳米颗粒填料。从文献(和通过使用云母的经验)已知的是,无机颗粒与聚合物绝缘材料相反,在部分放电作用下不会受到损害或被破坏,或只在很有限的范围内受损害或被破坏。其中所得的抑制腐蚀的作用尤其取决于颗粒直径和由其获得的颗粒表面。在此过程中表明,颗粒的比表面积越大,对颗粒的腐蚀抑制作用越大。无机纳米颗粒具有50g/m2或更大的很大的比表面积。
这种已知体系的缺点是,
· 浸渍树脂的粘度由于使用了纳米颗粒的填料而提高,由此使云母的彻底浸渍变得困难。
· 纳米颗粒大的比表面积在贮存和工艺进行期间会引发浸渍树脂发生(部分)聚合,由此其粘度强烈升高,使得对云母的浸渍进一步困难。
例如,在标准体系(BADGE/酐(Anhydrid))中的起始粘度为大约15-20mPas(在60℃)。在纳米颗粒的填充度为大约23重量%时,如对于显著改善耐电强度所必需的那样,粘度升高到>80mPas的值并因此使对云母的浸渍困难,尤其是当该值由于体系贮存而随时间流逝而升高时更是如此。
因此本发明的目的是,创造一种用于将基于云母的绝缘浸渍的复合材料,该复合材料尽管使用了纳米颗粒填料,仍具有相对低的粘度,优选地低于50mPas的粘度,特别地作为起始粘度。
该目的通过权利要求的主题结合说明书和附图被公开。
本发明的一般性认识是,纳米颗粒对整个基质的反应活性决定性地影响其粘度。
因此,能够发现,当使用一种或多种硅烷化试剂作为纳米颗粒的二氧化硅和/或氧化铝的改性物时,在用于制备用于基于云母的绝缘的浸渍树脂的环氧树脂/酐混合物中使用改性纳米颗粒二氧化硅,使粘度,特别是起始粘度,在高的填充度时保持相对较低。优选地,这种试剂具有至少一个与颗粒表面反应而断裂掉的官能团。
优选地,在浸渍树脂中存在含有3-60重量%,特别是含有5-40重量%的纳米颗粒填料的环氧树脂/酐混合物。
例如,选自以下组的化合物用作硅烷化试剂:三甲基甲氧基硅烷、甲基氢二甲氧基硅烷、二甲基二甲氧基硅烷、乙基三甲氧基硅烷、乙基三乙酰氧基硅烷、丙基三甲氧基硅烷、二异丙基二甲氧基硅烷,氯异丁基甲基二甲氧基硅烷、三氟丙基三甲氧基硅烷、三氟丙基甲基二甲氧基硅烷、异丁基三甲氧基硅烷、正丁基三甲氧基硅烷、正丁基甲基二甲氧基硅烷、苯基三甲氧基硅烷、苯基三甲氧基硅烷、苯基甲基二甲氧基硅烷、三苯基硅烷醇、正己基三甲氧基硅烷、正辛基三甲氧基硅烷、异辛基三甲氧基硅烷、癸基三甲氧基硅烷、十六烷基三甲氧基硅烷、环己基甲基二甲氧基硅烷、环己基乙基二甲氧基硅烷、辛基环戊基二甲氧基硅烷、叔丁基乙基二甲氧基硅烷、叔丁基丙基二甲氧基硅烷、二环己基二甲氧基硅烷、巯基丙基三甲氧基硅烷、巯基丙基甲基二甲氧基硅烷、双(三乙氧基甲硅烷基丙基)二硫化物、双(三乙氧基甲硅烷基丙基)四硫化物、氨基丙基三甲氧基硅烷、间氨基苯基三甲氧基硅烷、氨基丙基甲基二乙氧基硅烷、苯基氨基丙基三甲氧基硅烷、氨基乙基氨基丙基三甲氧基硅烷、氨基乙基氨基丙基甲基二甲氧基硅烷、环氧丙氧基丙基三甲氧基硅烷、环氧丙氧基丙基甲基二甲氧基硅烷、环氧环己基乙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三乙酰氧基硅烷、乙烯基三乙酰氧基硅烷、乙烯基三甲氧基硅烷、甲基乙烯基二甲氧基硅烷、乙烯基二甲基甲氧基硅烷、二乙烯基二甲氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、己烯基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、丙烯酰氧基丙基三甲氧基硅烷、乙烯基苄基乙二胺-丙基三甲氧基硅烷、乙烯基苄基乙二胺丙基三甲氧基硅烷-盐酸盐、烯丙基乙二胺丙基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基甲基二甲氧基硅烷、烯丙基二甲基甲氧基硅烷和己烯基三甲氧基硅烷、甲基三甲氧基硅烷、三甲基甲氧基硅烷、二甲基二甲氧基硅烷、三甲基氯硅烷、乙氧基三甲基硅烷、乙烯基三甲氧基硅烷、三甲基氯硅烷、三氯硅烷、溴三甲基硅烷、八甲基三硅氧烷、四甲基二硅氧烷、六甲基二硅氧烷。这些试剂可以单独地或以任意的混合物形式使用。
基于二氧化硅或氧化铝的纳米颗粒例如在含水或有机介质中进行改性。
在此过程中,所述硅烷化试剂在有机或含水介质中与颗粒反应。
根据本发明的一个有利的实施方式,所述反应这样进行,即将表面尽可能定量地饱和并由此将纳米颗粒的反应活性大大降低。
根据一个实施方式,纳米颗粒的表面进行改性,使得由此填充的浸渍树脂具有单分散性的纳米颗粒分布。
根据另一个实施方式,所述纳米颗粒具有低于50nm的初级粒度(Primärkorngrösse)。
填充的浸渍树脂的低起始粘度通过在一种低粘度的芳族环氧树脂,优选一种例如在60℃下粘度小于120mPas,优选地小于90mPas和特别优选60mPas的基于BFDGE和/或BADGE(双酚A二环氧甘油醚和/或双酚F二环氧甘油醚)的环氧树脂中使用经涂覆的颗粒而获得。
根据一个优选的实施方式,向低粘度的芳族环氧树脂中还添加反应性稀释剂。优选地,所述反应性稀释剂的添加量为1-20体积%,特别优选2-15体积%和非常特别为2-10体积%。
有利地,还选择一种用于将对整个基质仅产生很小负担的涂覆颗粒引入的方法。因此,例如将所述环氧树脂搅拌加入到在溶剂例如有机溶剂中存在的纳米颗粒填料的混合物中。随后,将所述有机溶剂在负压下借助于要么在较低温度下的蒸馏、喷雾干燥和/或薄层蒸馏而分离。
通过根据本发明在用于制备基于云母的高电压绝缘的浸渍树脂中使用经涂覆的纳米颗粒,可以实现具有期间尚未达到的性能的高电压绝缘。
首先与现有技术(例如Micalastic)相比,绝缘的耐电强度提高>5的因子。对缠绕的勒贝尔杆或线圈借助于在2UN-4UN的测试电压下的使用寿命电气试验进行所述表征。这使得可以证实在发电机/发动机工作时在额定电压下升高的使用寿命。
此外,有充足的贮存稳定性,使得允许纳米颗粒的浸渍树脂多次地用于浸渍基于云母的绝缘。这是通过低的并跨许多次浸渍恒定的粘度实现的,该粘度仅仅要求以每次浸渍过程所消耗的量添加新的浸渍树脂。这一体积相应于每次浸渍过程大约1-5%的总浸渍树脂体积。Si02颗粒的初级粒度优选为低于50nm。良好的贮存稳定性,例如纳米颗粒/环氧树脂/酐混合物在70℃下的贮存导致在10天后粘度为300mPas的最大值,在不存在催化剂下会带来体系的低反应活性。
最后,同样地,通过涂覆纳米颗粒和使用BFDGE和/或BADGE与反应性稀释剂如缩水甘油醚的可能结合,达到了在60℃例如<60mPas的低起始粘度。此外,反应性稀释剂的实例是:己二醇-1,6-二环氧甘油醚、六氢邻苯二甲酸二环氧甘油酯、2-乙基己基缩水甘油醚、1,4-丁烷二环氧甘油醚、三羟甲基丙烷三缩水甘油醚、聚丙二醇二环氧甘油醚。
工作实施例
在使用纳米颗粒填料结合当前使用的基于云母的绝缘材料时表现出了纳米技术的潜力。为此,在电场负载直至电击穿下测量试验试样的使用寿命,该试验试样以缩小的形式在水力发电机或涡轮发电机的定子中绝缘的铜导体方面相应于现有技术。因为绝缘体系在工作压力下的耐电强度为几十年,在过高几倍的电场强度下进行耐久电试验。下列图表描绘了在三个不同的电场负载下分别对于标准绝缘体系(云母)和纳米颗粒填充的绝缘体系(纳米绝缘)的各七个试样的耐电使用寿命平均值。
图1显示了未填充的和用纳米颗粒填充的高电压绝缘体系的使用寿命曲线图。
对比各集体(Kollektive)的使用寿命,表明使用寿命的改善达到了5-10倍。两个使用寿命曲线具有相同的斜率,从而似乎允许将使用寿命的延长直接转用到工作条件上。
这只有通过具有低起始粘度和良好贮存稳定性(贮存在70℃)的浸渍树脂才有可能。
除了反应活性降低,所述贮存稳定性也可以通过起始粘度降低而受到积极影响。为此提供了不同的涂覆措施。图5中描绘了通过使用双酚F二环氧甘油醚(BFDGE)作为迄今标准使用的BADGE的替代物的起始粘度降低对粘度曲线的影响。以如下形式进行引入:
· Nanoresins公司的Nanopox E500(37.5重量%的SiO2,25nm,在BFDGE中)
· 真空中和温度下干燥
· 用单官能的硅烷(例如ETMS)进行饱和
· 1%Byk W985。
图2显示了基于有和没有添加使用BYK 985的BFDGE的所选体系贮存稳定性的对比。
图的对比表明,使用纳米颗粒BFDGE(Nanopox
E 500)导致预期的起始粘度降低,并通过干燥、用ETMS饱和以及随后加入BYK W 985,达到了28天的贮存稳定性(参比值3500mPas)。
制备的基于BFDGE或BADGE的纳米复合物(SiO2,10nm)特征在于在与硬化剂的混合物中有低的起始粘度和低的反应活性。
图3和4一方面显示了制备的复合物的起始粘度和另一方面是基于BFDGE与MHHPA混合的不同复合物的贮存稳定性。
本发明涉及以基于BFDGE或BADGE作为浸渍树脂基质的含有纳米颗粒填料的低粘度芳族环氧树脂为基础的用于旋转电机的绝缘。根据本发明,所述纳米颗粒填料在反应活性、粘度和粒度上针对树脂基质进行调准,使得在聚合时的反应机理至少不会被所述纳米颗粒所促进。
Claims (5)
1.用于浸渍云母的浸渍树脂,包括环氧树脂/酐混合物和纳米颗粒填料,其中所述纳米颗粒填料是用硅烷化试剂改性的纳米颗粒二氧化硅,其中存在含有3-60重量%量的纳米颗粒填料的环氧树脂/酐混合物,并添加1-20体积%的反应性稀释剂,其中所述反应性稀释剂选自缩水甘油醚、己二醇-1,6-二环氧甘油醚、六氢邻苯二甲酸二环氧甘油酯、2-乙基己基缩水甘油醚、1,4-丁烷二环氧甘油醚、三羟甲基丙烷三缩水甘油醚和聚丙二醇二环氧甘油醚。
2.根据权利要求1的浸渍树脂,其中使用双酚F二环氧甘油醚或双酚A二环氧甘油醚。
3.根据权利要求1或2的浸渍树脂,其中所述硅烷化试剂是选自如下组的化合物:三甲基甲氧基硅烷、甲基氢二甲氧基硅烷、二甲基二甲氧基硅烷、乙基三甲氧基硅烷、乙基三乙酰氧基硅烷、丙基三甲氧基硅烷、二异丙基二甲氧基硅烷、氯异丁基甲基二甲氧基硅烷、三氟丙基三甲氧基硅烷、三氟丙基甲基二甲氧基硅烷、异丁基三甲氧基硅烷、正丁基三甲氧基硅烷、正丁基甲基二甲氧基硅烷、苯基三甲氧基硅烷、苯基甲基二甲氧基硅烷、三苯基硅烷醇、正己基三甲氧基硅烷、正辛基三甲氧基硅烷、异辛基三甲氧基硅烷、癸基三甲氧基硅烷、十六烷基三甲氧基硅烷、环己基甲基二甲氧基硅烷、环己基乙基二甲氧基硅烷、辛基环戊基二甲氧基硅烷、叔丁基乙基二甲氧基硅烷、叔丁基丙基二甲氧基硅烷、二环己基二甲氧基硅烷、巯基丙基三甲氧基硅烷、巯基丙基甲基二甲氧基硅烷、双(三乙氧基甲硅烷基丙基)二硫化物、双(三乙氧基甲硅烷基丙基)四硫化物、氨基丙基三甲氧基硅烷、间氨基苯基三甲氧基硅烷、氨基丙基甲基二乙氧基硅烷、苯基氨基丙基三甲氧基硅烷、氨基乙基氨基丙基三甲氧基硅烷、氨基乙基氨基丙基甲基二甲氧基硅烷、环氧丙氧基丙基三甲氧基硅烷、环氧丙氧基丙基甲基二甲氧基硅烷、环氧环己基乙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三乙酰氧基硅烷、乙烯基三乙酰氧基硅烷、乙烯基三甲氧基硅烷、甲基乙烯基二甲氧基硅烷、乙烯基二甲基甲氧基硅烷、二乙烯基二甲氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、己烯基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、丙烯酰氧基丙基三甲氧基硅烷、乙烯基苄基乙二胺丙基三甲氧基硅烷、乙烯基苄基乙二胺丙基三甲氧基硅烷-盐酸盐、烯丙基乙二胺丙基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基甲基二甲氧基硅烷和烯丙基二甲基甲氧基硅烷,单独地或以任意混合物形式。
4.根据权利要求1-3之一的浸渍树脂用于将旋转电机绝缘的用途。
5.根据权利要求4的用途,用于将发动机和发电机绝缘。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010032555.4 | 2010-07-29 | ||
DE102010032555A DE102010032555A1 (de) | 2010-07-29 | 2010-07-29 | Isolierung für rotierende elektrische Maschinen |
PCT/EP2011/061036 WO2012013439A1 (de) | 2010-07-29 | 2011-06-30 | Isolierung für rotierende elektrische maschinen |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103003345A CN103003345A (zh) | 2013-03-27 |
CN103003345B true CN103003345B (zh) | 2015-07-15 |
Family
ID=44510895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180036964.6A Expired - Fee Related CN103003345B (zh) | 2010-07-29 | 2011-06-30 | 用于旋转电机的绝缘 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130131218A1 (zh) |
EP (1) | EP2569362A1 (zh) |
CN (1) | CN103003345B (zh) |
DE (1) | DE102010032555A1 (zh) |
WO (1) | WO2012013439A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011079489A1 (de) * | 2011-07-20 | 2013-01-24 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Bandes für ein elektrisches Isolationssystem |
DE102011083228A1 (de) | 2011-09-22 | 2013-03-28 | Siemens Aktiengesellschaft | Isoliersysteme mit verbesserter Teilentladungsbeständigkeit, Verfahren zur Herstellung dazu |
DE102012205046A1 (de) * | 2012-03-29 | 2013-10-02 | Siemens Aktiengesellschaft | Elektroisolationskörper für eine Hochspannungsrotationsmaschine und Verfahren zum Herstellen des Elektroisolationskörpers |
EP2763142A1 (de) * | 2013-02-04 | 2014-08-06 | Siemens Aktiengesellschaft | Imprägnierharz für einen Elektroisolationskörper, Elektroisolationskörper und Verfahren zum Herstellen des Elektroisolationskörpers |
JP2015083663A (ja) * | 2013-09-11 | 2015-04-30 | 三菱日立パワーシステムズ株式会社 | 電気絶縁用樹脂組成物及びその硬化物並びにこれを用いたコイル、固定子、回転機及び高電圧機器 |
DE102014219765A1 (de) * | 2014-09-30 | 2016-03-31 | Siemens Aktiengesellschaft | Formulierung für ein Isoliersystem und Isoliersystem |
DE102015213537A1 (de) * | 2015-07-17 | 2017-01-19 | Siemens Aktiengesellschaft | Fester, insbesondere bandförmiger, Isolationswerkstoff, Formulierung für ein Imprägniermittel zur Herstellung eines Isolationssystems in einem Vakuumimprägnierverfahren damit und Maschinen mit derartigem Isolationssystem |
DE102015218096A1 (de) * | 2015-09-21 | 2017-03-23 | Siemens Aktiengesellschaft | Formulierung für ein Imprägnierharz für den VPI Prozess |
DE102016001211A1 (de) | 2016-02-03 | 2017-08-03 | Audi Ag | Träger für Spulen einer Elektromaschine |
JP6575701B1 (ja) * | 2019-02-25 | 2019-09-18 | 住友電気工業株式会社 | 樹脂組成物、無機充填剤、直流電力ケーブル、および直流電力ケーブルの製造方法 |
CN110601409B (zh) * | 2019-09-19 | 2020-12-18 | 住井科技(深圳)有限公司 | 电机用线圈及含有该线圈的电机 |
CN116157877A (zh) | 2020-08-28 | 2023-05-23 | 东芝三菱电机产业系统株式会社 | 生产树脂的方法和生产绝缘结构的方法 |
JP7308799B2 (ja) | 2020-08-31 | 2023-07-14 | 東芝三菱電機産業システム株式会社 | レジン製造方法及び絶縁構造製造方法 |
JP7360561B1 (ja) | 2022-03-08 | 2023-10-12 | 東芝三菱電機産業システム株式会社 | 回転電機及び絶縁テープ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4160926A (en) * | 1975-06-20 | 1979-07-10 | The Epoxylite Corporation | Materials and impregnating compositions for insulating electric machines |
US4113791A (en) * | 1977-03-03 | 1978-09-12 | Westinghouse Electric Corp. | Fluid solventless epoxy-anhydride compositions containing metal acetylacetonate accelerators and organic carboxylic acid co-accelerators |
EP1236765A1 (de) * | 2001-02-28 | 2002-09-04 | hanse chemie GmbH | Siliciumdioxiddispersion |
EP1457509B1 (de) * | 2003-03-11 | 2006-06-28 | hanse chemie AG | Polymere Epoxidharz-Zusammensetzung |
US7781063B2 (en) * | 2003-07-11 | 2010-08-24 | Siemens Energy, Inc. | High thermal conductivity materials with grafted surface functional groups |
EP1557880A1 (en) * | 2004-01-21 | 2005-07-27 | Nitto Denko Corporation | Resin composition for encapsulating semiconductor |
US7846853B2 (en) * | 2005-04-15 | 2010-12-07 | Siemens Energy, Inc. | Multi-layered platelet structure |
WO2006118536A1 (en) * | 2005-05-04 | 2006-11-09 | Abb Research Ltd. | Electric insulation material, an electric device and a method for producing an electric insulation material |
DE102006039638B3 (de) * | 2006-08-24 | 2007-11-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Nanofüllstoffe, Nanokomposite aus einem organischen Bindemittel und oberflächenmodifizierten Nanofüllstoffen, Verfahren zu ihrer Herstellung und ihre Verwendung |
EP2137740A1 (en) * | 2007-04-20 | 2009-12-30 | ABB Research LTD | An impregnation medium |
DE102007024096A1 (de) * | 2007-05-22 | 2008-11-27 | Evonik Degussa Gmbh | Klebstoffe |
DE102007062035A1 (de) * | 2007-12-21 | 2009-06-25 | Robert Bosch Gmbh | Reaktionsharzsystem |
WO2011095208A1 (en) * | 2010-02-03 | 2011-08-11 | Abb Research Ltd | Electrical insulation system |
-
2010
- 2010-07-29 DE DE102010032555A patent/DE102010032555A1/de not_active Ceased
-
2011
- 2011-06-30 WO PCT/EP2011/061036 patent/WO2012013439A1/de active Application Filing
- 2011-06-30 EP EP11740857A patent/EP2569362A1/de not_active Withdrawn
- 2011-06-30 US US13/812,954 patent/US20130131218A1/en not_active Abandoned
- 2011-06-30 CN CN201180036964.6A patent/CN103003345B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2012013439A1 (de) | 2012-02-02 |
CN103003345A (zh) | 2013-03-27 |
US20130131218A1 (en) | 2013-05-23 |
EP2569362A1 (de) | 2013-03-20 |
DE102010032555A1 (de) | 2012-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103003345B (zh) | 用于旋转电机的绝缘 | |
US9589699B2 (en) | Insulation systems having improved partial discharge resistance, and method for producing same | |
CN103814415B (zh) | 具有改进的抗局部放电性的绝缘体系及其制备方法 | |
JP4073209B2 (ja) | 絶縁耐力強化マイカテープ | |
WO2005069312A1 (ja) | テープ部材或いはシート部材並びにテープ部材或いはシート部材の製造方法 | |
EP3442098A1 (en) | Coil for rotating electrical machine, method for producing coil for rotating electrical machine, mica tape, cured product of mica tape, and insulating material | |
EP2848645B1 (en) | Resin composition for electric insulation and its hardened products, as well as coils, stators and rotary machines using the products | |
CN107851481B (zh) | 固体绝缘材料、其用途和由其制造的绝缘体系 | |
CN106085276A (zh) | 一种掺杂银盐的导电银胶及其制备方法与应用 | |
WO2016104141A1 (ja) | 絶縁テープ及びその製造方法、並びに固定子コイル及びその製造方法、並びに発電機 | |
CN107075231A (zh) | 浸渍树脂、导体装置、电线圈和电机 | |
US20170301429A1 (en) | Insulation System | |
JP5940210B2 (ja) | 回転式機械用の絶縁材料 | |
US20160374236A1 (en) | Conductive Corona Shielding Paper, In Particular For Outer Corona Shielding | |
US20110147040A1 (en) | Electrically insulating coating and method of formation thereof | |
CN110070968A (zh) | 一种耐直流闪络的非线性电导涂层绝缘子制备方法 | |
WO2015053031A1 (ja) | 樹脂組成物、樹脂組成物の製造方法、樹脂硬化物及び当該樹脂硬化物を用いた電気機器、電線、樹脂膜積層体、構造体 | |
CN108884296B (zh) | 固化性组合物及其固化物以及旋转机 | |
US20210313857A1 (en) | Corona Protection Tape for Electrical High-Voltage Machine | |
CN116285219A (zh) | 一种耐电痕性能优越的环氧树脂复合材料及其制备方法和应用 | |
US20220251412A1 (en) | Impregnating Formulation, Insulation Material, Method for Producing an Insulation Material, and Electrical Machine with an Insulation Material | |
JP2015514384A (ja) | 高電圧回転機械のための電気絶縁体及び電気絶縁体を製造するための方法 | |
JP7249209B2 (ja) | 注形用エポキシ樹脂組成物、電子部品及び電子部品の製造方法 | |
JP4499353B2 (ja) | 回転電機のための超誘電耐高圧絶縁体 | |
EP2283089B1 (en) | High-voltage generator with a rigid foam material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20170630 |