CN102976338B - 二氯二氢硅气相氯化方法 - Google Patents
二氯二氢硅气相氯化方法 Download PDFInfo
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- CN102976338B CN102976338B CN201210562579.1A CN201210562579A CN102976338B CN 102976338 B CN102976338 B CN 102976338B CN 201210562579 A CN201210562579 A CN 201210562579A CN 102976338 B CN102976338 B CN 102976338B
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- China
- Prior art keywords
- dichlorosilane
- hydrogen
- chlorine
- flow
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005660 chlorination reaction Methods 0.000 title claims description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 70
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 70
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 69
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000460 chlorine Substances 0.000 claims abstract description 59
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 59
- 238000002485 combustion reaction Methods 0.000 claims abstract description 32
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 13
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- 239000006227 byproduct Substances 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 2
- 238000004064 recycling Methods 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
- 238000004817 gas chromatography Methods 0.000 description 12
- 239000007795 chemical reaction product Substances 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 9
- 125000001309 chloro group Chemical group Cl* 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 7
- 239000005052 trichlorosilane Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 238000007323 disproportionation reaction Methods 0.000 description 5
- ZUBQXTBAJUUZSC-UHFFFAOYSA-N [N].Cl[SiH2]Cl Chemical compound [N].Cl[SiH2]Cl ZUBQXTBAJUUZSC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007348 radical reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- -1 chlorine radicals Chemical class 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000066 reactive distillation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
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CN201210562579.1A CN102976338B (zh) | 2012-12-24 | 2012-12-24 | 二氯二氢硅气相氯化方法 |
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CN201210562579.1A CN102976338B (zh) | 2012-12-24 | 2012-12-24 | 二氯二氢硅气相氯化方法 |
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CN102976338A CN102976338A (zh) | 2013-03-20 |
CN102976338B true CN102976338B (zh) | 2015-02-18 |
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Families Citing this family (1)
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CN114620731B (zh) * | 2020-12-14 | 2024-02-23 | 新疆新特晶体硅高科技有限公司 | 一种多晶硅的还原尾气回收方法及其回收装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87105671A (zh) * | 1986-08-20 | 1988-06-01 | 陶氏康宁公司 | 一种制备卤硅烷的方法 |
CN101549300A (zh) * | 2008-04-01 | 2009-10-07 | 刘宝珠 | 酸性与卤素气体处理触媒及制造方法 |
CN101863477A (zh) * | 2009-04-15 | 2010-10-20 | 气体产品与化学公司 | 用于制备氯代硅烷的方法 |
CN102712485A (zh) * | 2009-09-25 | 2012-10-03 | 吉坤日矿日石能源株式会社 | 四氯化硅的制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO20072357L (no) * | 2007-05-07 | 2008-11-10 | Norsk Hydro As | Metode for initiell oppstarting av reaksjonen ved direkteklorering av silisium metall eller et silisiumholdig materiale ved en lav temperatur |
DE102008041974A1 (de) * | 2008-09-10 | 2010-03-11 | Evonik Degussa Gmbh | Vorrichtung, deren Verwendung und ein Verfahren zur energieautarken Hydrierung von Chlorsilanen |
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2012
- 2012-12-24 CN CN201210562579.1A patent/CN102976338B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87105671A (zh) * | 1986-08-20 | 1988-06-01 | 陶氏康宁公司 | 一种制备卤硅烷的方法 |
CN101549300A (zh) * | 2008-04-01 | 2009-10-07 | 刘宝珠 | 酸性与卤素气体处理触媒及制造方法 |
CN101863477A (zh) * | 2009-04-15 | 2010-10-20 | 气体产品与化学公司 | 用于制备氯代硅烷的方法 |
CN102712485A (zh) * | 2009-09-25 | 2012-10-03 | 吉坤日矿日石能源株式会社 | 四氯化硅的制造方法 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Gas phase chlorination method of dichlorosilane Effective date of registration: 20230330 Granted publication date: 20150218 Pledgee: Industrial Bank Co.,Ltd. Yinchuan Branch Pledgor: NINGXIA SHENGLAN CHEMICAL ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. Registration number: Y2023980036999 |
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Granted publication date: 20150218 Pledgee: Industrial Bank Co.,Ltd. Yinchuan Branch Pledgor: NINGXIA SHENGLAN CHEMICAL ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. Registration number: Y2023980036999 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Gas phase chlorination method of dichlorosilane Granted publication date: 20150218 Pledgee: Industrial Bank Co.,Ltd. Yinchuan Branch Pledgor: NINGXIA SHENGLAN CHEMICAL ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. Registration number: Y2024980010536 |
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