CN102905903A - 打印头和相关方法和系统 - Google Patents
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Abstract
一种打印头包括活动隔膜、用以使隔膜移动的压电致动器以及设置在活动隔膜上的电子电路。一种制造打印头的方法包括在电路晶片的第一侧上制造CMOS电路以及在电路晶片的第二侧中形成室,使得室的底部形成活动隔膜,并且CMOS电路被设置在与室的底部相对的活动隔膜上。一种打印系统包括具有在活动隔膜的第一侧上形成的CMOS电路的打印头、具有包括活动隔膜的第二侧的底部的室,以及在CMOS电路上形成、被配置成引起活动隔膜到室中的位移的压电致动器。
Description
背景技术
一般根据喷墨式打印头内的墨滴形成的两个机制中的一个来对按需滴墨喷墨式打印机进行分类。热气泡喷墨式打印机使用具有加热元件致动器的热喷墨式打印头,该加热元件致动器使充墨室内的墨(或其他流体)汽化以产生迫使墨滴从打印头喷嘴出来的气泡。压电喷墨式打印机使用具有压电材料致动器的压电喷墨式打印头,该压电材料致动器在充墨室内部产生压力脉冲以迫使墨滴(或其他流体)从打印头喷嘴出来。
当使用可喷射流体时,压电喷墨式打印头相比于热喷墨式打印头而言是有利的,所述可喷射流体的较高粘性和/或化学组成抑制热喷墨式打印头的使用,诸如UV可固化打印墨。热喷墨式打印头局限于可喷射流体,其组成在不经历机械或化学降解的情况下能够耐受沸点温度。由于压电打印头使用压力(不是热量)来迫使墨滴从喷嘴出来,所以压电打印头可以容纳可喷射材料的更广泛选择。因此,压电打印头被广泛地用来在多种介质基底上进行打印。
然而,与压电打印头相关联的一个问题是以使打印系统成本最小化的方式进行的MEMS(微机电系统)和压电致动器驱动电路的构造。存在在每个喷嘴的基础上要求电子电路控制的压电打印头的某些特征。例如,修整单独喷嘴并减少相邻喷嘴之间的串扰要求对每个喷嘴使用单独的电子电路。然而,实现每个喷嘴的电子电路要求打印头中的附加区域,这增加打印头成本。因此,构造具有高喷嘴密度和低成本的压电打印头是持续的挑战。
附图说明
现在将以示例的方式参考附图来描述本实施例,在所述附图中:
图1举例说明了根据实施例的适合于结合打印头的喷墨式打印系统;
图2举例说明了根据实施例的具有在活动隔膜(membrane)上形成的CMOS电路的压电喷墨式打印头的侧视图;
图3举例说明了根据实施例的通过向位于各室上的压电材料施加致动电压信号进行的压电打印头的致动;
图4举例说明了根据实施例的压电打印头晶片堆叠的顶视图;
图5举例说明了根据实施例的在用于制造压电打印头的晶片堆叠上执行的一般处理步骤。
具体实施方式
问题和解决方案概述
如上所述,与压电喷墨式打印头相关联的一个持续的挑战是构造具有高喷嘴密度和低成本的打印头。困难主要与打印头上的用于容纳被用来单独地控制每个喷嘴的单独电子电路的可用空间不足有关。
本公开的实施例一般通过压电喷墨式打印头来解决此挑战,该压电喷墨式打印头具有在打印头致动中使用的活动隔膜上制造的CMOS电路。使CMOS电路器件中的至少某些在由于墨滴喷射MEMS(微机电系统)机制的致动而变形的那部分晶片表面上形成是打印头内的可用区域的更高效使用,并降低了MEMS制造的复杂性。制造CMOS电路并将其以晶片形式结合到用来完成MEMS结构的一个或多个附加晶片还降低了压电致动器与CMOS电路之间的互连的成本。
在一个示例性实施例中,打印头包括活动隔膜、用于使该隔膜移动的压电致动器以及设置在该活动隔膜上的电子电路。在另一实施例中,打印系统包括具有在活动隔膜的第一侧上形成的CMOS电路的打印头。室具有包括活动隔膜的第二侧的底部。被配置成引起活动隔膜到室中的位移的压电致动器在CMOS电路上形成。
在另一实施例中,一种制造喷墨打印头的方法包括在电路晶片的第一侧上制造CMOS电路。室在电路晶片的第二侧中形成,使得是室的底部形成活动隔膜。在电路晶片的第一侧上制造CMOS电路在活动隔膜上,并且与在电路晶片的第二侧中形成的室的底部相对。
说明性实施例
图1举例说明了根据实施例的适合于结合如本文公开的打印头或流体喷射器件的喷墨式打印系统100。在本实施例中,将打印头公开为流滴喷射打印头114。喷墨式打印系统100包括喷墨式打印头组件102、供墨组件104、安装组件106、介质传送组件108、电子控制器110以及向喷墨式打印系统100的各种电部件提供功率的至少一个电源112。喷墨式打印头组件102包括至少一个打印头(流体喷射器件)或打印头模114,其通过多个孔或喷嘴116朝着打印介质118喷射墨滴从而向打印介质118上进行打印。打印介质118是任何类型的适当片材,诸如纸张、制卡片的纸料、透明片、聚酯薄膜等。典型地,喷嘴116被布置成一个或多个列或阵列,使得来自喷嘴116的适当排序的墨喷射促使字符、符号和/或其他图形或图像随着喷墨式打印头组件102和打印介质118相对于彼此移动而被打印在打印介质118上。
供墨组件104向打印头组件102供应流体墨并包括用于储存墨的储存器120。墨从储存器120流到喷墨式打印头组件102。供墨组件104和喷墨式打印头组件102可以形成单向墨输送系统或再循环墨输送系统。在单向墨输送系统中,被供应给喷墨式打印头组件102的基本上所有墨都在打印期间被消耗。然而,在再循环墨输送系统中,供应给打印头组件102的墨的仅一部分在打印期间被消耗。在打印期间未消耗的墨返回至供墨组件104。
在一个实施例中,喷墨式打印头组件102和供墨组件104被一起放置在喷墨盒或喷墨笔中。在另一实施例中,供墨组件104与喷墨式打印头组件102分离并通过诸如供给管的接口连接向喷墨式打印头组件102供应墨。在任一实施例中,可以将供墨组件104的储存器120去除、替换和/或重新填充。在其中喷墨式打印头组件102和供墨组件104被一起放置在喷墨盒中的一个实施例中,储存器120包括位于盒内的本地储存器以及与盒分开定位的较大储存器。该单独的较大储存器用于对本地储存器进行重新填充。因此,可以将该单独的较大储存器和/或本地储存器去除、替换和/或重新填充。
安装组件106将喷墨式打印头组件102相对于介质传送组件108定位,并且介质传送组件108将打印介质118相对于喷墨式打印头组件102定位。因此,在喷墨式打印头组件102与打印介质118之间的区域中邻近于喷嘴116限定打印区122。在一个实施例中,喷墨式打印头组件102是扫描型打印头组件。在扫描型打印头组件中,安装组件106包括用于使喷墨式打印头组件102相对于介质传送组件108移动以扫描打印介质118的托架。在另一实施例中,喷墨式打印头组件102是非扫描型打印头组件。在非扫描型打印头组件中,安装组件106将喷墨式打印头组件102相对于介质传送组件108固定在规定位置。因此,介质传送组件108相对于喷墨式打印头组件102对打印介质118进行定位。
电子控制器或打印机控制器110典型地包括处理器、固件以及用于与喷墨式打印头组件102、安装组件106以及介质传送组件108通信并对其进行控制的其他打印机电子装置。电子控制器110从诸如计算机的主机系统接收数据124,并包括用于临时存储数据124的存储器。典型地,数据124沿着电子、红外线、光学或其他信息传输路径被发送到喷墨式打印系统100。数据124表示例如要打印的文档和/或文件。同样地,数据124形成用于喷墨式打印系统100的打印作业并包括一个或多个打印作业命令和/或命令参数。
在一个实施例中,电子控制器110控制喷墨式打印头组件102以便从喷嘴116喷射墨滴。因此,电子控制器110限定喷射墨滴的图案,其在打印介质118上形成字符、符号和/或其他图形或图像。喷射墨滴的图案是由打印作业命令和/或命令参数确定的。
在一个实施例中,喷墨式打印头组件102包括一个打印头114。在另一实施例中,喷墨式打印头组件102是宽阵列或多头打印头组件。在一个宽阵列实施例中,喷墨式打印头组件102包括载体,其承载打印头模114、提供打印头模114与电子控制器110之间的电通信并提供打印头模114与供墨组件104之间的射流通信。
在一个实施例中,喷墨式打印系统100是按需滴墨压电喷墨式打印系统,其中,打印头114是诸如图2中所示的压电喷墨式打印头114。图2举例说明了根据实施例的具有在活动隔膜上形成的CMOS电路的压电喷墨式打印头114的部分侧视图。压电打印头114被形成为晶片堆叠506,其一般包括硅电路晶片500和硅MEMS晶片504,如在下面参考图5更详细地讨论的。压电打印头114在墨室202中形成压电喷射元件/致动器200以产生迫使墨滴或其他流滴从喷嘴116出来的压力脉冲。在室200中通过供墨槽204来替换墨。压电室202的致动在致动电压信号被施加于与室相关联的压电材料200时发生。
图3举例说明了根据实施例的通过向位于各室202上的压电材料200施加致动电压信号而进行的压电打印头114中的压电室202的致动。压电打印头114包括被形成为每个室202的底部部分的活动隔膜206。压电材料200被接合(例如粘附或形成)到活动隔膜206。压电材料200的致动促使材料200沿着室202的方向变形,这导致邻接活动隔膜206到室202中的相应位移(该变形和位移在图3图示中出于本描述的目的被放大)。活动隔膜206到室202中的位移减小了室体积,引起墨滴(或其他流体)从室202通过喷嘴116的喷射。
参考图2和3,压电打印头114还包括在电路晶片500(图5)的表面区域上制造的电子CMOS电路208。CMOS电路208是通过标准CMOS制造过程而构造的,并且可以跨电路晶片500的顶侧的整个表面区域而形成,包括在活动隔膜206上。因此,在压电材料200致动时柔性地变形以引起墨滴喷射的活动隔膜206在一侧上充当室202的底面,并且在另一侧上充当用于构造CMOS电路208的有价值的硅基板面。因此,如图3所示,在活动隔膜206上制造的那部分CMOS电路208在活动隔膜206在压电材料208的致动期间柔性地变形时与之一起移动。
图4举例说明了根据实施例的压电打印头114硅晶片堆叠的顶视图。CMOS电路208包括活动隔膜电路400和静态表面电路402。在活动隔膜206上制造的活动隔膜电路400包括例如驱动晶体管Q1~Q4,针对放大器电路,其被配置成驱动压电致动器材料200。活动隔膜206上的电路400还可以包括应变传感器注入电阻器。
在操作期间,隔膜206相对于电路晶片500表面的平面的上下移动在硅的晶格中引起应变。该效果将改变半导体中的载流子的迁移率。针对应变传感器电阻器,该效果是器件的电阻的变化。针对MOS晶体管(例如Q1~Q4),该效果是将影响用于给定栅极电压(Vgs)的器件的饱和电流,有效地根据晶格应变的其取向和方向而使得其更窄或更宽。然而此效果是小的(小于6%),并且计算值显示出0.032至0.054的晶格应变。这些值对于高精度和/或高速度电路而言是可接受的,并且其对于在驱动压电致动器200的最后阶段中使用的输出驱动晶体管而言在本实施方式中是足足有余的。
可以将应变传感器注入储存器实现为根据到活动隔膜206的硅表面中的注入掺杂而形成的常规电阻器组。此类电阻器具有高欧姆/平方电阻率,并且通过注入,其被完全机械地耦合到硅表面/基底。在常规全桥式配置中使用四个电阻器。机械地,电阻器被布置成使得两个沿着应变方向且两个与之正交。因此,可以直接从隔膜206的移动测量应变信号。该应变信号可以用来例如出于控制目的反馈隔膜206的位置。
静态表面电路402包括每喷嘴电路块,其位于活动隔膜206周围的电路晶片500(图5)的表面上的固定位置上。该电路块包括逻辑块、信号发生器块和放大器电路块。这些电路块一起充当驱动压电致动器200的解复用和功率输出电路。
图5举例说明了根据实施例的在压电打印头114的制造中所使用的晶片堆叠上执行的一般处理步骤。在图5中将该处理步骤划分为步骤A~E。在步骤A中,示出了电路晶片500。电路晶片500是被处理成全功能CMOS电路的SOI(绝缘体上硅)晶片。电路晶片500包括在SOI晶片内注入并在其顶部上形成的CMOS电路208。在电路晶片500上制造CMOS电路208所涉及的步骤是本领域的技术人员众所周知的标准CMOS制造过程。
在步骤B中,向电路晶片500添加/粘附(例如用热可释放粘合剂)装卸晶片(handle wafer)。装卸晶片502由于机械原因而在处理期间被临时附着。例如,装卸晶片502允许加工机器在不损坏CMOS电路208的情况下在处理期间抓紧晶片组件。装卸晶片502还在后续处理(例如蚀刻)步骤期间提供机械强度。
在图5的步骤C中,在电路晶片500中形成室202和活动隔膜206。室202被蚀刻到SOI电路晶片500中至限定活动隔膜206(即隔膜)的厚度的深度。在此步骤中,典型地由SOI电路晶片500内的蚀刻终止、诸如二氧化硅层来控制蚀刻的深度。该蚀刻终止提供用于实现用于活动隔膜206的准确厚度的机制。
在图5的步骤D中,示出了基于硅的MEMS(微机电系统)晶片504。MEMS晶片504被处理成包括喷嘴116和供墨槽204。与电路晶片500相比较,MEMS晶片504不具有电功能。相反,MEMS晶片504提供使得墨或其他流体能够流过压电打印头114的流体机械功能。类似于电路晶片500,MEMS晶片504典型地是具有一个或多个蚀刻终止以在形成喷嘴116和供墨槽204时提供蚀刻准确度的SOI晶片。在制造MEMS晶片504时涉及的步骤是本领域的技术人员众所周知的标准MEMS制造过程。基本MEMS制造过程步骤包括例如材料层的沉积(例如物理或化学沉积)、通过光刻法来对层进行图案化以及蚀刻(例如湿法或干法蚀刻)以在晶片中产生期望的形状,诸如喷嘴11和供墨槽204。在步骤D中,电路晶片500与MEMS晶片504之间的接合处也被示为虚线。
在步骤E中,示出了全晶片堆叠506。在此步骤中,通过粘附将电路晶片500和MEMS晶片504相互接合(虚线),例如使得室202和喷嘴116被适当地对准。在步骤E中,显而易见的是在电路晶片500和MEMS晶片504被接合之后,将装卸晶片从电路晶片500去除。在步骤E中,还在室活动隔膜206的区域之上施加压电致动器材料200。因此,在活动隔膜206上制造的CMOS电路208被设置在压电材料200下面。压电材料200由PZT组成,例如,并且典型地以批量方法施加,由此,预先形成PZT材料并且然后将其粘附于电路晶片500的表面。还可以使用薄膜方法直接在活动隔膜206区域的顶部上形成PZT。在薄膜方法中,将PZT作为薄液体涂层旋涂到电路晶片500上并随后在熔炉中处理。应注意的是用于向电路晶片500的活动隔膜206施加PZT的薄膜方法接近于用于MOS电路能够在不招致损坏的情况下耐受高温的时间的行业标准极限。然而,薄膜方法可能更适合于除PZT之外的压电材料200的施加。
Claims (15)
1.一种打印头,包括:
活动隔膜;
压电致动器,其用以使所述隔膜移动;以及
电子电路,其被设置在所述活动隔膜上。
2.如权利要求1中所述的打印头,其中,所述电子电路被设置在所述压电致动器与所述隔膜之间。
3.如权利要求1中所述的打印头,其中,所述活动隔膜是电路晶片的活动部分,所述打印头还包括:
电子电路,其被设置在所述电路晶片的静态部分上。
4.如权利要求1中所述的打印头,其中,所述电子电路包括用以驱动所述压电致动器的输出驱动器。
5.如权利要求1中所述的打印头,其中,所述电子电路包括被配置成感测所述隔膜的移动的传感器。
6.如权利要求5中所述的打印头,其中,所述传感器是被配置成通过电阻变化来指示所述硅的晶格中的应变的应变仪电阻器。
7.一种制造喷墨式打印头的方法,其包括:
在电路晶片的第一侧上制造CMOS电路;以及
在所述电路晶片的第二侧上形成室,使得所述室的底部形成活动隔膜,并且所述CMOS电路被设置在与所述室的底部相对的所述活动隔膜上。
8.如权利要求7中所述的方法,还包括在所述电路晶片的第一侧上的所述CMOS电路之上施加压电致动器材料。
9.如权利要求8中所述的方法,其中,施加压电致动器材料包括通过选自由将预处理压电致动器材料粘附于所述电路晶片的第一侧和将压电致动器材料旋涂至所述电路晶片的第一侧上组成的组的过程进行施加。
10.如权利要求6中所述的方法,其中,所述电路晶片包括SOI(绝缘体上硅)晶片,并且形成所述室包括将所述SOI晶片向下蚀刻至由所述SOI晶片内的二氧化硅层限定的蚀刻终止。
11.如权利要求6中所述的方法,其中,在不处于所述活动隔膜上的电路晶片的第一侧的静态区域上制造CMOS电路。
12.如权利要求6中所述的方法,还包括将包括供墨槽和喷嘴的MEMS(微机电系统)晶片接合到所述电路晶片,使得所述室的顶部向所述喷嘴的输入侧开放。
13.如权利要求12中所述的方法,还包括:
在形成所述室之前,将装卸晶片粘附于所述电路晶片的第一侧;以及
在将所述电路晶片接合到所述MEMS晶片之后,从所述电路晶片的第一侧去除所述装卸晶片。
14.一种打印系统,其包括:
打印头,其具有在活动隔膜的第一侧上形成的CMOS电路;
室,其具有包括所述活动隔膜的第二侧的底部;以及
压电致动器,其在所述CMOS电路上形成并被配置成引起所述活动隔膜到所述室中的位移。
15.如权利要求14中所述的系统,其中,所述室和活动隔膜在电路晶片中形成,所述系统还包括:
喷嘴,其在MEMS(微机电系统)晶片中形成;
其中,所述电路晶片和MEMS晶片被接合以提供所述室与所述喷嘴之间的对准和流体连通。
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CN108513550B (zh) * | 2016-02-05 | 2020-10-23 | 惠普发展公司,有限责任合伙企业 | 打印杆及其打印系统 |
CN110431019A (zh) * | 2017-04-24 | 2019-11-08 | 惠普发展公司,有限责任合伙企业 | 包括应变计传感器的流体喷射管芯 |
CN110446612A (zh) * | 2017-04-24 | 2019-11-12 | 惠普发展公司,有限责任合伙企业 | 包括应变计传感器的流体喷射管芯 |
US11090942B2 (en) | 2017-04-24 | 2021-08-17 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
US11135840B2 (en) | 2017-04-24 | 2021-10-05 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
Also Published As
Publication number | Publication date |
---|---|
TWI458641B (zh) | 2014-11-01 |
EP2576225A1 (en) | 2013-04-10 |
BR112012030070A2 (pt) | 2016-08-09 |
JP2013527062A (ja) | 2013-06-27 |
US8789932B2 (en) | 2014-07-29 |
KR20130090764A (ko) | 2013-08-14 |
CN102905903B (zh) | 2015-04-22 |
EP2576225B1 (en) | 2020-01-15 |
KR101656915B1 (ko) | 2016-09-12 |
US20130106961A1 (en) | 2013-05-02 |
JP5632964B2 (ja) | 2014-11-26 |
BR112012030070B1 (pt) | 2020-04-07 |
EP2576225A4 (en) | 2017-11-08 |
WO2011149469A1 (en) | 2011-12-01 |
TW201200364A (en) | 2012-01-01 |
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