CN102893338A - 可逆电阻率切换元件的分步软编程 - Google Patents

可逆电阻率切换元件的分步软编程 Download PDF

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Publication number
CN102893338A
CN102893338A CN2011800196806A CN201180019680A CN102893338A CN 102893338 A CN102893338 A CN 102893338A CN 2011800196806 A CN2011800196806 A CN 2011800196806A CN 201180019680 A CN201180019680 A CN 201180019680A CN 102893338 A CN102893338 A CN 102893338A
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CN
China
Prior art keywords
memory cell
resistance
programming
memory
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800196806A
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English (en)
Chinese (zh)
Inventor
X.C.科斯塔
R.朔伊尔莱恩
A.班迪奥派迪亚
B.勒
X.李
T.杜
C.R.格拉
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SanDisk 3D LLC
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SanDisk 3D LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/949,146 external-priority patent/US8848430B2/en
Application filed by SanDisk 3D LLC filed Critical SanDisk 3D LLC
Publication of CN102893338A publication Critical patent/CN102893338A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN2011800196806A 2010-02-18 2011-02-18 可逆电阻率切换元件的分步软编程 Pending CN102893338A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US30586810P 2010-02-18 2010-02-18
US61/305,868 2010-02-18
US30724510P 2010-02-23 2010-02-23
US61/307,245 2010-02-23
US12/949,146 US8848430B2 (en) 2010-02-23 2010-11-18 Step soft program for reversible resistivity-switching elements
US12/949,146 2010-11-18
PCT/US2011/025367 WO2011103379A2 (en) 2010-02-18 2011-02-18 Step soft program for reversible resistivity-switching elements

Publications (1)

Publication Number Publication Date
CN102893338A true CN102893338A (zh) 2013-01-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800196806A Pending CN102893338A (zh) 2010-02-18 2011-02-18 可逆电阻率切换元件的分步软编程

Country Status (5)

Country Link
JP (1) JP2013520761A (ko)
KR (1) KR20130001725A (ko)
CN (1) CN102893338A (ko)
TW (1) TW201135731A (ko)
WO (1) WO2011103379A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105993048A (zh) * 2014-03-21 2016-10-05 英特尔公司 交叉点存储器偏置方案

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JP5665717B2 (ja) * 2011-10-11 2015-02-04 株式会社東芝 不揮発性半導体記憶装置
CN103890851B (zh) * 2011-10-28 2016-10-26 国际商业机器公司 调节相变存储器单元
JP6299760B2 (ja) * 2013-06-24 2018-03-28 日本電気株式会社 スイッチング素子のプログラム方法
US9224469B2 (en) * 2013-10-30 2015-12-29 Kabushiki Kaisha Toshiba Semiconductor memory device and memory system
KR102298604B1 (ko) * 2014-11-28 2021-09-06 삼성전자주식회사 저항성 메모리 장치의 제어 방법
TWI560714B (en) * 2014-12-24 2016-12-01 Winbond Electronics Corp Resistance random access memory
US9443587B1 (en) * 2015-07-21 2016-09-13 Winbond Electronics Corp. Resistive memory apparatus and writing method thereof
FR3066309B1 (fr) * 2017-05-09 2020-10-16 Commissariat Energie Atomique Procede de gestion de l'endurance d'une memoire reinscriptible non volatile et dispositif de programmation d'une telle memoire
US11837285B2 (en) 2021-08-22 2023-12-05 Applied Materials, Inc. Bias temperature instability correction in memory arrays

Citations (5)

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WO2009011221A1 (en) * 2007-07-18 2009-01-22 Kabushiki Kaisha Toshiba A resistance change memory device and programming method thereof
US20090059652A1 (en) * 2006-04-27 2009-03-05 Masao Taguchi Resistive memory cell array with common plate
US20090109737A1 (en) * 2007-10-31 2009-04-30 Ovonyx, Inc Method of restoring variable resistance memory device
US20090147563A1 (en) * 2007-12-07 2009-06-11 Thomas Happ Integrated circuit for programming a memory element
WO2009114200A1 (en) * 2008-03-14 2009-09-17 Micron Technology, Inc. Phase change memory adaptive programming

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US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US7081377B2 (en) 2002-06-27 2006-07-25 Sandisk 3D Llc Three-dimensional memory
US6952043B2 (en) 2002-06-27 2005-10-04 Matrix Semiconductor, Inc. Electrically isolated pillars in active devices
AU2003296988A1 (en) 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US6951780B1 (en) 2003-12-18 2005-10-04 Matrix Semiconductor, Inc. Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays
JP4524455B2 (ja) * 2004-11-26 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7423901B2 (en) * 2006-03-03 2008-09-09 Marvell World Trade, Ltd. Calibration system for writing and reading multiple states into phase change memory
KR100801082B1 (ko) * 2006-11-29 2008-02-05 삼성전자주식회사 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치
US7542370B2 (en) 2006-12-31 2009-06-02 Sandisk 3D Llc Reversible polarity decoder circuit
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US20090059652A1 (en) * 2006-04-27 2009-03-05 Masao Taguchi Resistive memory cell array with common plate
WO2009011221A1 (en) * 2007-07-18 2009-01-22 Kabushiki Kaisha Toshiba A resistance change memory device and programming method thereof
US20090109737A1 (en) * 2007-10-31 2009-04-30 Ovonyx, Inc Method of restoring variable resistance memory device
US20090147563A1 (en) * 2007-12-07 2009-06-11 Thomas Happ Integrated circuit for programming a memory element
WO2009114200A1 (en) * 2008-03-14 2009-09-17 Micron Technology, Inc. Phase change memory adaptive programming

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105993048A (zh) * 2014-03-21 2016-10-05 英特尔公司 交叉点存储器偏置方案

Also Published As

Publication number Publication date
WO2011103379A3 (en) 2011-11-24
WO2011103379A2 (en) 2011-08-25
JP2013520761A (ja) 2013-06-06
TW201135731A (en) 2011-10-16
KR20130001725A (ko) 2013-01-04

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Application publication date: 20130123