CN102867726B - 一种等离子约束环组件、等离子处理装置以及处理半导体衬底的方法 - Google Patents
一种等离子约束环组件、等离子处理装置以及处理半导体衬底的方法 Download PDFInfo
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- CN102867726B CN102867726B CN201210276251.3A CN201210276251A CN102867726B CN 102867726 B CN102867726 B CN 102867726B CN 201210276251 A CN201210276251 A CN 201210276251A CN 102867726 B CN102867726 B CN 102867726B
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- plasma
- confinement ring
- plasma confinement
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- 229920000642 polymer Polymers 0.000 claims abstract description 44
- 230000008021 deposition Effects 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 238000009832 plasma treatment Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/083,241 US7430986B2 (en) | 2005-03-18 | 2005-03-18 | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| US11/083241 | 2005-03-18 | ||
| US11/083,241 | 2005-03-18 | ||
| CN200680008850XA CN101495670B (zh) | 2005-03-18 | 2006-03-15 | 具有减少聚合物沉积特性的等离子约束环组件 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680008850XA Division CN101495670B (zh) | 2005-03-18 | 2006-03-15 | 具有减少聚合物沉积特性的等离子约束环组件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102867726A CN102867726A (zh) | 2013-01-09 |
| CN102867726B true CN102867726B (zh) | 2015-07-08 |
Family
ID=37008986
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210276251.3A Active CN102867726B (zh) | 2005-03-18 | 2006-03-15 | 一种等离子约束环组件、等离子处理装置以及处理半导体衬底的方法 |
| CN200680008850XA Active CN101495670B (zh) | 2005-03-18 | 2006-03-15 | 具有减少聚合物沉积特性的等离子约束环组件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680008850XA Active CN101495670B (zh) | 2005-03-18 | 2006-03-15 | 具有减少聚合物沉积特性的等离子约束环组件 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7430986B2 (enExample) |
| EP (1) | EP1869228B1 (enExample) |
| JP (2) | JP4960340B2 (enExample) |
| KR (1) | KR101355729B1 (enExample) |
| CN (2) | CN102867726B (enExample) |
| IL (1) | IL185670A0 (enExample) |
| SG (1) | SG152231A1 (enExample) |
| TW (1) | TWI404137B (enExample) |
| WO (1) | WO2006101889A2 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| US9659758B2 (en) | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US7482550B2 (en) * | 2006-10-16 | 2009-01-27 | Lam Research Corporation | Quartz guard ring |
| US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
| US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
| US7862682B2 (en) * | 2007-06-13 | 2011-01-04 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| US8313610B2 (en) | 2007-09-25 | 2012-11-20 | Lam Research Corporation | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
| US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
| US8152954B2 (en) * | 2007-10-12 | 2012-04-10 | Lam Research Corporation | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
| KR101708060B1 (ko) * | 2008-03-14 | 2017-02-17 | 램 리써치 코포레이션 | 캠 고정 전극 클램프 |
| US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| US8313612B2 (en) | 2009-03-24 | 2012-11-20 | Lam Research Corporation | Method and apparatus for reduction of voltage potential spike during dechucking |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| DE102009022982A1 (de) * | 2009-05-28 | 2010-12-02 | Oerlikon Trading Ag, Trübbach | Verfahren zum Aufbringen eines Hochtemperaturschmiermittels |
| KR101110080B1 (ko) * | 2009-07-08 | 2012-03-13 | 주식회사 유진테크 | 확산판을 선택적으로 삽입설치하는 기판처리방법 |
| US8419959B2 (en) | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| TWI385725B (zh) * | 2009-09-18 | 2013-02-11 | Advanced Micro Fab Equip Inc | A structure that reduces the deposition of polymer on the backside of the substrate |
| JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| US9076826B2 (en) | 2010-09-24 | 2015-07-07 | Lam Research Corporation | Plasma confinement ring assembly for plasma processing chambers |
| US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
| US20140141619A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
| CN103854943B (zh) * | 2012-11-30 | 2016-05-04 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理腔室的约束环及腔室清洁方法 |
| US8893702B2 (en) * | 2013-02-20 | 2014-11-25 | Lam Research Corporation | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses |
| KR101445226B1 (ko) * | 2013-04-23 | 2014-09-29 | 피에스케이 주식회사 | 배기 링 어셈블리 및 이를 포함하는 기판 처리 장치 |
| SG11201508512PA (en) * | 2013-05-23 | 2015-12-30 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| US9837420B1 (en) | 2017-01-10 | 2017-12-05 | Micron Technology, Inc. | Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US11469084B2 (en) * | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
| JP7374103B2 (ja) | 2018-01-31 | 2023-11-06 | ラム リサーチ コーポレーション | 静電チャック（ｅｓｃ）ペデスタル電圧分離 |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| CN109725375A (zh) * | 2018-12-21 | 2019-05-07 | 中国电子科技集团公司第四十四研究所 | 一种ⅲ-ⅴ族材料纳米光栅刻蚀方法 |
| CN111586957B (zh) * | 2019-02-19 | 2021-05-04 | 大连理工大学 | 一种容性耦合等离子体放电装置 |
| CN112802729B (zh) * | 2019-11-13 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | 带温度维持装置的隔离环 |
| CN112928007B (zh) * | 2019-12-06 | 2023-09-12 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备及用于等离子体处理设备的下电极组件 |
| CN113035679B (zh) * | 2019-12-24 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置 |
| CN113745081B (zh) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种隔离环组件、等离子体处理装置及处理方法 |
| CN111876777A (zh) * | 2020-07-24 | 2020-11-03 | 沈阳富创精密设备有限公司 | 一种刻蚀设备约束环的制造工艺 |
| JP7583663B2 (ja) * | 2021-04-01 | 2024-11-14 | 東京エレクトロン株式会社 | 上部電極アセンブリ |
| CN115547799A (zh) * | 2021-06-29 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | 等离子体约束环、等离子体处理设备及处理半导体的方法 |
| JP7752492B2 (ja) * | 2021-08-10 | 2025-10-10 | 東京エレクトロン株式会社 | 成膜装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1405857A (zh) * | 1995-07-10 | 2003-03-26 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
| US6666924B1 (en) * | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
| CN1505829A (zh) * | 2001-04-30 | 2004-06-16 | 科林研发公司 | 采用较佳射频回路的等离子体密封 |
Family Cites Families (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6095083A (en) * | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US5543751A (en) * | 1995-07-21 | 1996-08-06 | Motorola, Inc. | Power combiner for use in a radio frequency system and a method of constructing a power combiner |
| US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
| US6092486A (en) * | 1996-05-27 | 2000-07-25 | Sumimoto Metal Indsutries, Ltd. | Plasma processing apparatus and plasma processing method |
| US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
| US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
| US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
| US5846459A (en) * | 1997-06-26 | 1998-12-08 | Ucar Carbon Technology Corporation | Method of forming a flexible graphite sheet with decreased anisotropy |
| US6008130A (en) * | 1997-08-14 | 1999-12-28 | Vlsi Technology, Inc. | Polymer adhesive plasma confinement ring |
| US6090304A (en) * | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
| US6009830A (en) * | 1997-11-21 | 2000-01-04 | Applied Materials Inc. | Independent gas feeds in a plasma reactor |
| GB2331838A (en) * | 1997-11-24 | 1999-06-02 | Coolbox | Portable,thermoelectric,temperature controlled receptacles. |
| US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
| KR100258984B1 (ko) * | 1997-12-24 | 2000-08-01 | 윤종용 | 건식 식각 장치 |
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| US6019060A (en) * | 1998-06-24 | 2000-02-01 | Lam Research Corporation | Cam-based arrangement for positioning confinement rings in a plasma processing chamber |
| US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
| US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
| US6050216A (en) * | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
| US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
| US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
| US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6415736B1 (en) * | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
| US6408786B1 (en) * | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
| US6423175B1 (en) * | 1999-10-06 | 2002-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus and method for reducing particle contamination in an etcher |
| US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| US6237528B1 (en) * | 2000-01-24 | 2001-05-29 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| TW492041B (en) | 2000-02-14 | 2002-06-21 | Tokyo Electron Ltd | Method and device for attenuating harmonics in semiconductor plasma processing systems |
| US6451703B1 (en) * | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
| US6362110B1 (en) * | 2000-03-30 | 2002-03-26 | Lam Research Corporation | Enhanced resist strip in a dielectric etcher using downstream plasma |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| US6363624B1 (en) * | 2000-11-21 | 2002-04-02 | Applied Materials, Inc. | Apparatus for cleaning a semiconductor process chamber |
| US20020121500A1 (en) * | 2000-12-22 | 2002-09-05 | Rao Annapragada | Method of etching with NH3 and fluorine chemistries |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
| US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
| JP2003224115A (ja) * | 2001-11-05 | 2003-08-08 | Tokyo Electron Ltd | プラズマプロセスにおけるチャンバの共振を緩和する装置並びに方法 |
| US20030092278A1 (en) * | 2001-11-13 | 2003-05-15 | Fink Steven T. | Plasma baffle assembly |
| US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| US6686293B2 (en) * | 2002-05-10 | 2004-02-03 | Applied Materials, Inc | Method of etching a trench in a silicon-containing dielectric material |
| US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
| TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| JP2004079557A (ja) * | 2002-08-09 | 2004-03-11 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| US20040065656A1 (en) * | 2002-10-04 | 2004-04-08 | Makoto Inagawa | Heated substrate support |
| US7169695B2 (en) * | 2002-10-11 | 2007-01-30 | Lam Research Corporation | Method for forming a dual damascene structure |
| US6838012B2 (en) * | 2002-10-31 | 2005-01-04 | Lam Research Corporation | Methods for etching dielectric materials |
| US7972467B2 (en) * | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
| US7455748B2 (en) * | 2003-06-20 | 2008-11-25 | Lam Research Corporation | Magnetic enhancement for mechanical confinement of plasma |
| JP4291080B2 (ja) * | 2003-08-01 | 2009-07-08 | 信越石英株式会社 | 石英ガラスの表面処理方法 |
| US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
| KR100539266B1 (ko) * | 2004-06-02 | 2005-12-27 | 삼성전자주식회사 | 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비 |
| US20060172542A1 (en) * | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
| US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
-
2005
- 2005-03-18 US US11/083,241 patent/US7430986B2/en active Active
-
2006
- 2006-03-15 WO PCT/US2006/009300 patent/WO2006101889A2/en not_active Ceased
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- 2006-03-15 CN CN201210276251.3A patent/CN102867726B/zh active Active
- 2006-03-15 CN CN200680008850XA patent/CN101495670B/zh active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1405857A (zh) * | 1995-07-10 | 2003-03-26 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
| US6666924B1 (en) * | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
| CN1505829A (zh) * | 2001-04-30 | 2004-06-16 | 科林研发公司 | 采用较佳射频回路的等离子体密封 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102867726A (zh) | 2013-01-09 |
| IL185670A0 (en) | 2008-01-06 |
| CN101495670A (zh) | 2009-07-29 |
| EP1869228B1 (en) | 2018-11-28 |
| SG152231A1 (en) | 2009-05-29 |
| TWI404137B (zh) | 2013-08-01 |
| US20060207502A1 (en) | 2006-09-21 |
| WO2006101889A2 (en) | 2006-09-28 |
| US8500952B2 (en) | 2013-08-06 |
| JP2008533741A (ja) | 2008-08-21 |
| EP1869228A2 (en) | 2007-12-26 |
| CN101495670B (zh) | 2012-10-03 |
| TW200644114A (en) | 2006-12-16 |
| US20080318433A1 (en) | 2008-12-25 |
| US8262922B2 (en) | 2012-09-11 |
| JP4960340B2 (ja) | 2012-06-27 |
| KR101355729B1 (ko) | 2014-01-27 |
| US7430986B2 (en) | 2008-10-07 |
| EP1869228A4 (en) | 2010-11-03 |
| WO2006101889A3 (en) | 2009-04-16 |
| KR20070114392A (ko) | 2007-12-03 |
| US20120325407A1 (en) | 2012-12-27 |
| JP2012104847A (ja) | 2012-05-31 |
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