CN102859373B - 用于控制温度且使得能够对半导体芯片进行测试的电路 - Google Patents

用于控制温度且使得能够对半导体芯片进行测试的电路 Download PDF

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Publication number
CN102859373B
CN102859373B CN201180020441.2A CN201180020441A CN102859373B CN 102859373 B CN102859373 B CN 102859373B CN 201180020441 A CN201180020441 A CN 201180020441A CN 102859373 B CN102859373 B CN 102859373B
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China
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transistor
temperature
heating element
semiconductor chip
circuit
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CN102859373A (zh
Inventor
拉温德拉·卡尔纳迪
苏迪尔·普拉萨德
拉姆·A·约恩纳维图拉
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]

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  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201180020441.2A 2010-05-06 2011-05-06 用于控制温度且使得能够对半导体芯片进行测试的电路 Active CN102859373B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/774,730 US8384395B2 (en) 2010-05-06 2010-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip
US12/774,730 2010-05-06
PCT/US2011/035600 WO2011140491A2 (en) 2010-05-06 2011-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip

Publications (2)

Publication Number Publication Date
CN102859373A CN102859373A (zh) 2013-01-02
CN102859373B true CN102859373B (zh) 2016-01-27

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CN201180020441.2A Active CN102859373B (zh) 2010-05-06 2011-05-06 用于控制温度且使得能够对半导体芯片进行测试的电路

Country Status (4)

Country Link
US (1) US8384395B2 (https=)
JP (1) JP5901616B2 (https=)
CN (1) CN102859373B (https=)
WO (1) WO2011140491A2 (https=)

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US20130126508A1 (en) * 2011-11-17 2013-05-23 Texas Instruments Incorporated Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices
US8569808B1 (en) 2012-04-06 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature stabilitized MEMS
US9651981B2 (en) 2012-08-09 2017-05-16 Infineon Technologies Austria Ag Integrated chip with heating element and reference circuit
US9024657B2 (en) 2012-10-11 2015-05-05 Easic Corporation Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller
US20140105246A1 (en) * 2012-10-11 2014-04-17 Easic Corporation Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node
US9562943B2 (en) * 2012-11-19 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer temperature sensing methods and related semiconductor wafer
CN103941172B (zh) * 2013-01-22 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体测试装置及测试方法
CN104101823B (zh) * 2013-04-02 2016-08-10 中芯国际集成电路制造(上海)有限公司 半导体测试结构及测试方法
US8760180B1 (en) * 2013-07-29 2014-06-24 Analog Test Engines Systems and methods mitigating temperature dependence of circuitry in electronic devices
US9507369B2 (en) * 2013-09-27 2016-11-29 Cavium, Inc. Dynamically adjusting supply voltage based on monitored chip temperature
JP2015154658A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 回路装置及び電子機器
US9401643B1 (en) 2015-03-10 2016-07-26 International Business Machines Corporation Bias-temperature induced damage mitigation circuit
CN104808136A (zh) * 2015-05-18 2015-07-29 杭州士兰微电子股份有限公司 芯片温度与电流强度关联性的测试设备
JP6426552B2 (ja) * 2015-07-29 2018-11-21 日立オートモティブシステムズ株式会社 バーンイン試験装置及び方法
CN105445645B (zh) * 2015-12-14 2018-01-05 宁波大学 一种用于监测集成电路nbti老化效应的数字型监测电路
WO2018125045A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Targeted burn-in on an integrated circuit
CN109932630B (zh) * 2017-12-15 2021-08-03 朋程科技股份有限公司 过温度检测电路及其测试方法
CN109710015B (zh) * 2018-12-29 2021-03-02 西安紫光国芯半导体有限公司 一种门延时稳定电路及方法
US11366154B2 (en) * 2019-07-31 2022-06-21 Globalfoundries U.S. Inc. Enabling of functional logic in IC using thermal sequence enabling test
KR20210021271A (ko) * 2019-08-17 2021-02-25 삼성전자주식회사 칩 국부적 열원을 이용한 이미지 센서 내의 열 쉐이딩을 감소시키기 위한 시스템 및 방법
CN115698733A (zh) * 2020-08-04 2023-02-03 爱德万测试公司 使用同步信令测试被测试器件的自动测试设备、分选机、和方法
CN117083529A (zh) * 2021-07-01 2023-11-17 华为技术有限公司 温度控制装置和方法
CN115061030B (zh) * 2022-05-06 2025-07-22 深圳格芯集成电路装备有限公司 保温运载机构、检测设备及保温方法
CN115798563A (zh) * 2022-10-21 2023-03-14 长鑫存储技术有限公司 测试芯片的方法、放热电路以及芯片
CN115794526B (zh) * 2023-01-05 2023-10-10 法特迪精密科技（苏州）有限公司 片上芯片高温老化测试插座控制系统及控制方法
CN119471327B (zh) * 2025-01-14 2025-03-25 安盈半导体技术(常州)有限公司 一种基于温度响应的芯片测试方法及测试系统

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US20080096490A1 (en) * 2006-10-24 2008-04-24 Takao Okazaki Semiconductor integrated circuit for rf communications

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JP3762415B2 (ja) * 2004-06-07 2006-04-05 株式会社アドバンテスト バーンイン装置の状態診断方法
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US5233161A (en) * 1991-10-31 1993-08-03 Hughes Aircraft Company Method for self regulating CMOS digital microcircuit burn-in without ovens
WO1996017389A1 (en) * 1994-11-29 1996-06-06 Advantest Corporation Temperature compensation circuit for ic chip
US20080096490A1 (en) * 2006-10-24 2008-04-24 Takao Okazaki Semiconductor integrated circuit for rf communications

Also Published As

Publication number Publication date
CN102859373A (zh) 2013-01-02
WO2011140491A3 (en) 2012-03-01
JP5901616B2 (ja) 2016-04-13
WO2011140491A2 (en) 2011-11-10
US8384395B2 (en) 2013-02-26
JP2013527930A (ja) 2013-07-04
US20110273186A1 (en) 2011-11-10

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