JP5901616B2 - 温度を制御するため及び半導体チップのテストを可能にするための回路 - Google Patents
温度を制御するため及び半導体チップのテストを可能にするための回路 Download PDFInfo
- Publication number
- JP5901616B2 JP5901616B2 JP2013509307A JP2013509307A JP5901616B2 JP 5901616 B2 JP5901616 B2 JP 5901616B2 JP 2013509307 A JP2013509307 A JP 2013509307A JP 2013509307 A JP2013509307 A JP 2013509307A JP 5901616 B2 JP5901616 B2 JP 5901616B2
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- Prior art keywords
- heating element
- transistor
- temperature
- semiconductor chip
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 119
- 238000012360 testing method Methods 0.000 title claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 113
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
Landscapes
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/774,730 US8384395B2 (en) | 2010-05-06 | 2010-05-06 | Circuit for controlling temperature and enabling testing of a semiconductor chip |
| US12/774,730 | 2010-05-06 | ||
| PCT/US2011/035600 WO2011140491A2 (en) | 2010-05-06 | 2011-05-06 | Circuit for controlling temperature and enabling testing of a semiconductor chip |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013527930A JP2013527930A (ja) | 2013-07-04 |
| JP2013527930A5 JP2013527930A5 (https=) | 2014-06-26 |
| JP5901616B2 true JP5901616B2 (ja) | 2016-04-13 |
Family
ID=44901536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013509307A Active JP5901616B2 (ja) | 2010-05-06 | 2011-05-06 | 温度を制御するため及び半導体チップのテストを可能にするための回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8384395B2 (https=) |
| JP (1) | JP5901616B2 (https=) |
| CN (1) | CN102859373B (https=) |
| WO (1) | WO2011140491A2 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8927909B2 (en) | 2010-10-11 | 2015-01-06 | Stmicroelectronics, Inc. | Closed loop temperature controlled circuit to improve device stability |
| US20130126508A1 (en) * | 2011-11-17 | 2013-05-23 | Texas Instruments Incorporated | Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices |
| US8569808B1 (en) | 2012-04-06 | 2013-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature stabilitized MEMS |
| US9651981B2 (en) | 2012-08-09 | 2017-05-16 | Infineon Technologies Austria Ag | Integrated chip with heating element and reference circuit |
| US20140105246A1 (en) * | 2012-10-11 | 2014-04-17 | Easic Corporation | Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node |
| US9024657B2 (en) | 2012-10-11 | 2015-05-05 | Easic Corporation | Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller |
| US9562943B2 (en) * | 2012-11-19 | 2017-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer temperature sensing methods and related semiconductor wafer |
| CN103941172B (zh) * | 2013-01-22 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体测试装置及测试方法 |
| CN104101823B (zh) * | 2013-04-02 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体测试结构及测试方法 |
| US8760180B1 (en) * | 2013-07-29 | 2014-06-24 | Analog Test Engines | Systems and methods mitigating temperature dependence of circuitry in electronic devices |
| US9507369B2 (en) * | 2013-09-27 | 2016-11-29 | Cavium, Inc. | Dynamically adjusting supply voltage based on monitored chip temperature |
| JP2015154658A (ja) * | 2014-02-18 | 2015-08-24 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
| US9401643B1 (en) | 2015-03-10 | 2016-07-26 | International Business Machines Corporation | Bias-temperature induced damage mitigation circuit |
| CN104808136A (zh) * | 2015-05-18 | 2015-07-29 | 杭州士兰微电子股份有限公司 | 芯片温度与电流强度关联性的测试设备 |
| JP6426552B2 (ja) * | 2015-07-29 | 2018-11-21 | 日立オートモティブシステムズ株式会社 | バーンイン試験装置及び方法 |
| CN105445645B (zh) * | 2015-12-14 | 2018-01-05 | 宁波大学 | 一种用于监测集成电路nbti老化效应的数字型监测电路 |
| WO2018125045A1 (en) * | 2016-12-27 | 2018-07-05 | Intel Corporation | Targeted burn-in on an integrated circuit |
| CN109932630B (zh) * | 2017-12-15 | 2021-08-03 | 朋程科技股份有限公司 | 过温度检测电路及其测试方法 |
| CN109710015B (zh) * | 2018-12-29 | 2021-03-02 | 西安紫光国芯半导体有限公司 | 一种门延时稳定电路及方法 |
| US11366154B2 (en) * | 2019-07-31 | 2022-06-21 | Globalfoundries U.S. Inc. | Enabling of functional logic in IC using thermal sequence enabling test |
| KR20210021271A (ko) * | 2019-08-17 | 2021-02-25 | 삼성전자주식회사 | 칩 국부적 열원을 이용한 이미지 센서 내의 열 쉐이딩을 감소시키기 위한 시스템 및 방법 |
| CN115698735A (zh) * | 2020-08-04 | 2023-02-03 | 爱德万测试公司 | 使用附加信令测试被测试器件的自动测试设备、分选机和方法 |
| CN117083529A (zh) * | 2021-07-01 | 2023-11-17 | 华为技术有限公司 | 温度控制装置和方法 |
| CN115061030B (zh) * | 2022-05-06 | 2025-07-22 | 深圳格芯集成电路装备有限公司 | 保温运载机构、检测设备及保温方法 |
| CN115798563A (zh) * | 2022-10-21 | 2023-03-14 | 长鑫存储技术有限公司 | 测试芯片的方法、放热电路以及芯片 |
| CN115794526B (zh) * | 2023-01-05 | 2023-10-10 | 法特迪精密科技(苏州)有限公司 | 片上芯片高温老化测试插座控制系统及控制方法 |
| CN119471327B (zh) * | 2025-01-14 | 2025-03-25 | 安盈半导体技术(常州)有限公司 | 一种基于温度响应的芯片测试方法及测试系统 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4497998A (en) * | 1982-12-23 | 1985-02-05 | Fairchild Camera And Instrument Corp. | Temperature stabilized stop-restart oscillator |
| JPH0812114B2 (ja) * | 1985-10-09 | 1996-02-07 | 東京エレクトロン東北株式会社 | デジタル温度検出装置 |
| US5309090A (en) * | 1990-09-06 | 1994-05-03 | Lipp Robert J | Apparatus for heating and controlling temperature in an integrated circuit chip |
| US5543632A (en) * | 1991-10-24 | 1996-08-06 | International Business Machines Corporation | Temperature monitoring pilot transistor |
| US5233161A (en) * | 1991-10-31 | 1993-08-03 | Hughes Aircraft Company | Method for self regulating CMOS digital microcircuit burn-in without ovens |
| JPH06216724A (ja) * | 1993-01-20 | 1994-08-05 | Mitsubishi Electric Corp | コンパレータ装置及びそのクロック供給制御装置 |
| US5886564A (en) * | 1994-11-29 | 1999-03-23 | Advantest Corp. | Temperature compensation circuit for IC chip |
| US6590405B2 (en) * | 1999-04-21 | 2003-07-08 | Advantest, Corp | CMOS integrated circuit and timing signal generator using same |
| JP2001174516A (ja) * | 1999-12-17 | 2001-06-29 | Toshiba Microelectronics Corp | 半導体試験装置 |
| US6861860B2 (en) * | 2002-05-17 | 2005-03-01 | Stmicroelectronics, Inc. | Integrated circuit burn-in test system and associated methods |
| US6677800B1 (en) * | 2002-10-17 | 2004-01-13 | Richtek Technology Corp. | Temperature sensing circuit |
| JP3762415B2 (ja) * | 2004-06-07 | 2006-04-05 | 株式会社アドバンテスト | バーンイン装置の状態診断方法 |
| US7564274B2 (en) * | 2005-02-24 | 2009-07-21 | Icera, Inc. | Detecting excess current leakage of a CMOS device |
| KR20070114310A (ko) | 2005-03-08 | 2007-11-30 | 웰스-씨티아이, 엘엘씨. | Ic 소켓의 온도 감지 및 예측 |
| US7852098B2 (en) * | 2005-08-01 | 2010-12-14 | Marvell World Trade Ltd. | On-die heating circuit and control loop for rapid heating of the die |
| JP2008109243A (ja) * | 2006-10-24 | 2008-05-08 | Renesas Technology Corp | Rf通信用半導体集積回路 |
| CL2008003008A1 (es) | 2007-10-12 | 2009-10-02 | Bigtec Private Ltd | Un micro dispositivo portatil de reaccion en cadena de polimerasa (pcr) basado en un micro chip de ceramica de coccion conjunta de baja temperatura (ltcc) que comprende camara de reaccion, calentador, control de temperatura del calentador, deteccion optica de interfaz de comunicacion, y el metodo para monitorearlo y controlarlo. |
| JP2009103550A (ja) | 2007-10-23 | 2009-05-14 | Seiko Epson Corp | 電子部品の温度制御装置及びicハンドラ |
| JP2009109314A (ja) * | 2007-10-30 | 2009-05-21 | Olympus Corp | 半導体装置および半導体装置の検査方法 |
-
2010
- 2010-05-06 US US12/774,730 patent/US8384395B2/en active Active
-
2011
- 2011-05-06 JP JP2013509307A patent/JP5901616B2/ja active Active
- 2011-05-06 WO PCT/US2011/035600 patent/WO2011140491A2/en not_active Ceased
- 2011-05-06 CN CN201180020441.2A patent/CN102859373B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011140491A3 (en) | 2012-03-01 |
| CN102859373A (zh) | 2013-01-02 |
| JP2013527930A (ja) | 2013-07-04 |
| WO2011140491A2 (en) | 2011-11-10 |
| US20110273186A1 (en) | 2011-11-10 |
| US8384395B2 (en) | 2013-02-26 |
| CN102859373B (zh) | 2016-01-27 |
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