CN102859027A - 用于借助陶瓷靶进行电弧气相沉积的方法 - Google Patents

用于借助陶瓷靶进行电弧气相沉积的方法 Download PDF

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Publication number
CN102859027A
CN102859027A CN2011800222872A CN201180022287A CN102859027A CN 102859027 A CN102859027 A CN 102859027A CN 2011800222872 A CN2011800222872 A CN 2011800222872A CN 201180022287 A CN201180022287 A CN 201180022287A CN 102859027 A CN102859027 A CN 102859027A
Authority
CN
China
Prior art keywords
vapor deposition
arc
target
deposition source
movement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800222872A
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English (en)
Chinese (zh)
Inventor
M.莱希塔勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Trading AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading AG Truebbach filed Critical Oerlikon Trading AG Truebbach
Priority to CN201610725648.4A priority Critical patent/CN106435488A/zh
Publication of CN102859027A publication Critical patent/CN102859027A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN2011800222872A 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法 Pending CN102859027A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610725648.4A CN106435488A (zh) 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33093510P 2010-05-04 2010-05-04
US61/330935 2010-05-04
PCT/EP2011/001856 WO2011137967A1 (de) 2010-05-04 2011-04-13 Verfahren zum funkenverdampfen mit keramischen targets

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610725648.4A Division CN106435488A (zh) 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法

Publications (1)

Publication Number Publication Date
CN102859027A true CN102859027A (zh) 2013-01-02

Family

ID=44121711

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011800222872A Pending CN102859027A (zh) 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法
CN201610725648.4A Pending CN106435488A (zh) 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610725648.4A Pending CN106435488A (zh) 2010-05-04 2011-04-13 用于借助陶瓷靶进行电弧气相沉积的方法

Country Status (7)

Country Link
US (1) US20130220800A1 (enExample)
EP (1) EP2566999B1 (enExample)
JP (1) JP5721813B2 (enExample)
KR (1) KR101814228B1 (enExample)
CN (2) CN102859027A (enExample)
CA (1) CA2798210C (enExample)
WO (1) WO2011137967A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111315915A (zh) * 2017-10-03 2020-06-19 欧瑞康表面处理解决方案股份公司普费菲孔 具有受限磁场的电弧源
EP3556901B1 (en) * 2018-04-20 2021-03-31 Plansee Composite Materials Gmbh Vacuum arc source
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1115191A (zh) * 1993-08-30 1996-01-17 W·布勒施公开股份有限公司 磁场阴极
US20010035348A1 (en) * 1998-09-14 2001-11-01 Hans Braendle Target array for an arc vapor deposition chamber including arc vapor deposition source and target plates thereof
CN101146926A (zh) * 2005-03-25 2008-03-19 日本磁性技术株式会社 等离子体生成装置中的微滴除去装置和微滴除去方法
US20080110749A1 (en) * 2006-05-16 2008-05-15 Siegfried Krassnitzer Arc source and magnet configuration

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
JPS6442575A (en) * 1987-08-10 1989-02-14 Kobe Steel Ltd Ceramic target having high melting point for vacuum deposition with arc
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
JPH01263265A (ja) * 1988-04-13 1989-10-19 Kobe Steel Ltd 真空アーク蒸着法
JPH02213463A (ja) * 1989-02-13 1990-08-24 Nippon Sheet Glass Co Ltd 透明導電膜の製造方法
US5271817A (en) * 1992-03-19 1993-12-21 Vlsi Technology, Inc. Design for sputter targets to reduce defects in refractory metal films
DE4301516C2 (de) * 1993-01-21 2003-02-13 Applied Films Gmbh & Co Kg Targetkühlung mit Wanne
JP3315302B2 (ja) * 1995-12-18 2002-08-19 株式会社神戸製鋼所 真空アーク蒸着方法
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JP3917348B2 (ja) * 1999-05-26 2007-05-23 株式会社神戸製鋼所 アーク蒸発源、真空蒸着装置及び真空蒸着方法
US6495002B1 (en) * 2000-04-07 2002-12-17 Hy-Tech Research Corporation Method and apparatus for depositing ceramic films by vacuum arc deposition
EP1346085B1 (en) * 2000-11-30 2011-10-12 North Carolina State University Method for producing group iii metal nitride based materials
US6787010B2 (en) * 2000-11-30 2004-09-07 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US20020139662A1 (en) * 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
CH696828A5 (de) * 2003-11-18 2007-12-14 Oerlikon Trading Ag Zündvorrichtung.
CN100419117C (zh) * 2004-02-02 2008-09-17 株式会社神户制钢所 硬质叠层被膜、其制造方法及成膜装置
HUE028868T2 (en) * 2007-04-17 2017-01-30 Oerlikon Surface Solutions Ag Pfäffikon Vacuum Evaporator Source with Arched Vacuum Evaporator and Arched Vacuum Evaporator Source
SE531749C2 (sv) * 2007-09-17 2009-07-28 Seco Tools Ab Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel
JP5344864B2 (ja) * 2008-07-31 2013-11-20 富士フイルム株式会社 成膜装置および成膜方法
AT12021U1 (de) * 2010-04-14 2011-09-15 Plansee Se Beschichtungsquelle und verfahren zu deren herstellung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1115191A (zh) * 1993-08-30 1996-01-17 W·布勒施公开股份有限公司 磁场阴极
US20010035348A1 (en) * 1998-09-14 2001-11-01 Hans Braendle Target array for an arc vapor deposition chamber including arc vapor deposition source and target plates thereof
CN101146926A (zh) * 2005-03-25 2008-03-19 日本磁性技术株式会社 等离子体生成装置中的微滴除去装置和微滴除去方法
US20080110749A1 (en) * 2006-05-16 2008-05-15 Siegfried Krassnitzer Arc source and magnet configuration

Also Published As

Publication number Publication date
WO2011137967A1 (de) 2011-11-10
EP2566999A1 (de) 2013-03-13
US20130220800A1 (en) 2013-08-29
EP2566999B1 (de) 2018-12-12
JP2013525611A (ja) 2013-06-20
CA2798210C (en) 2018-08-21
JP5721813B2 (ja) 2015-05-20
CN106435488A (zh) 2017-02-22
KR101814228B1 (ko) 2018-01-04
KR20130097644A (ko) 2013-09-03
CA2798210A1 (en) 2011-11-10

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Address before: Swiss Te Lui Bach

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Applicant after: Ou Ruikang surface solutions Inc.

Address before: Swiss Te Lui Bach

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Application publication date: 20130102