CN102856333B - 固体摄像装置、其制造方法以及电子设备 - Google Patents

固体摄像装置、其制造方法以及电子设备 Download PDF

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Publication number
CN102856333B
CN102856333B CN201210206114.2A CN201210206114A CN102856333B CN 102856333 B CN102856333 B CN 102856333B CN 201210206114 A CN201210206114 A CN 201210206114A CN 102856333 B CN102856333 B CN 102856333B
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semiconductor substrate
thickness
photoelectric conversion
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layer
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CN102856333A (zh
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宫波勇树
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210206114.2A 2011-06-28 2012-06-18 固体摄像装置、其制造方法以及电子设备 Expired - Fee Related CN102856333B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-143581 2011-06-28
JP2011143581A JP2013012556A (ja) 2011-06-28 2011-06-28 固体撮像装置とその製造方法、および電子機器

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CN102856333A CN102856333A (zh) 2013-01-02
CN102856333B true CN102856333B (zh) 2016-09-21

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US (1) US9202839B2 (enExample)
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JP6095258B2 (ja) * 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP6018376B2 (ja) * 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
CN103681728B (zh) * 2012-09-20 2018-04-24 索尼公司 固体摄像装置及其方法以及电子设备
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
KR102083550B1 (ko) * 2013-03-15 2020-04-14 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2015037121A (ja) * 2013-08-13 2015-02-23 株式会社東芝 固体撮像素子
JP6079502B2 (ja) 2013-08-19 2017-02-15 ソニー株式会社 固体撮像素子および電子機器
JP5604703B1 (ja) 2013-09-10 2014-10-15 弘一 関根 固体撮像装置
JP6171997B2 (ja) 2014-03-14 2017-08-02 ソニー株式会社 固体撮像素子およびその駆動方法、並びに電子機器
JP6541313B2 (ja) * 2014-07-31 2019-07-10 キヤノン株式会社 光電変換装置、及び撮像システム
KR102346956B1 (ko) * 2014-08-01 2022-01-03 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
KR102356695B1 (ko) * 2014-08-18 2022-01-26 삼성전자주식회사 광 유도 부재를 가지는 이미지 센서
JP2016096233A (ja) * 2014-11-14 2016-05-26 ソニー株式会社 固体撮像素子、製造方法、および電子装置
WO2016103315A1 (ja) * 2014-12-22 2016-06-30 オリンパス株式会社 固体撮像装置および撮像装置
WO2016143554A1 (ja) * 2015-03-12 2016-09-15 ソニー株式会社 固体撮像素子、撮像装置、並びに電子機器
JP7006268B2 (ja) * 2015-06-05 2022-01-24 ソニーグループ株式会社 撮像素子、電子機器、並びに、製造装置および方法
JP6711573B2 (ja) * 2015-08-10 2020-06-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
KR102491580B1 (ko) * 2015-12-15 2023-01-25 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2017112169A (ja) * 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
JP7005886B2 (ja) * 2016-03-31 2022-01-24 ソニーグループ株式会社 固体撮像素子、および電子機器
US20200127039A1 (en) * 2017-01-24 2020-04-23 Sony Semiconductor Solutions Corporation Light-receiving device, method of manufacturing light receiving device, imaging device, and electronic apparatus
US10861898B2 (en) * 2017-03-16 2020-12-08 Sharp Kabushiki Kaisha Imaging device and X-ray imaging device
EP3671840A4 (en) * 2017-08-16 2020-08-19 Sony Corporation IMAGING ELEMENT, LAYERING IMAGING ELEMENT AND SEMICONDUCTOR IMAGING DEVICE
CN118471994A (zh) * 2017-08-31 2024-08-09 索尼半导体解决方案公司 光检测装置和电子设备
JP7078919B2 (ja) * 2017-11-14 2022-06-01 マッハコーポレーション株式会社 固体撮像素子及びその形成方法
JP2019086785A (ja) * 2018-12-27 2019-06-06 株式会社ニコン 撮像素子および撮像装置
US11581355B2 (en) * 2019-10-18 2023-02-14 Teledyne Scientific & Imaging, Llc Fully reticulated detectors for curved focal plane arrays
KR102761437B1 (ko) 2020-01-31 2025-01-31 삼성전자주식회사 이미지 센서 및 전자 장치
CN111785748A (zh) * 2020-08-10 2020-10-16 联合微电子中心有限责任公司 降低背照式图像传感器暗电流的方法及结构
CN117596908B (zh) * 2024-01-19 2024-04-05 武汉楚兴技术有限公司 一种像素单元、图像传感器及其制造方法

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US6930336B1 (en) * 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
CN101964352A (zh) * 2009-07-23 2011-02-02 索尼公司 固体摄像器件、其制造方法和电子装置

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JP4799835B2 (ja) 2004-07-09 2011-10-26 東レ・ダウコーニング株式会社 室温硬化性オルガノポリシロキサン組成物、および電気・電子機器
JP4839008B2 (ja) * 2005-03-28 2011-12-14 富士フイルム株式会社 単板式カラー固体撮像素子

Patent Citations (2)

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US6930336B1 (en) * 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
CN101964352A (zh) * 2009-07-23 2011-02-02 索尼公司 固体摄像器件、其制造方法和电子装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12514020B2 (en) 2013-08-19 2025-12-30 Sony Group Corporation Solid-state imaging device having through electrode provided therein and electronic apparatus incorporating the solid-state imaging device

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US20130001730A1 (en) 2013-01-03
CN102856333A (zh) 2013-01-02
US9202839B2 (en) 2015-12-01
JP2013012556A (ja) 2013-01-17

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