CN102854196A - Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects - Google Patents
Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects Download PDFInfo
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Abstract
The invention relates to a wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and a test method of the MEMS structure defects. The wafer-level automatic test system comprises a control computer and a wafer platform for placing a to-be-tested wafer; the wafer platform is connected with the control computer through a wafer platform controller; a probe station is arranged on the wafer platform, and is connected with the control computer through a probe station controller; and the control computer is electrically connected with a test module used for acquiring natural frequency and images. The static and dynamic test is carried out on the surface defects and the internal defects of the MEMS structure through the use of the principles of surface topography image comparison and laser vibration measuring frequency comparison so as to judge whether an MEMS product can enter a following packaging process. The testing system and the testing method adopt a wafer-level automatic testing manner and a noncontact nondestructive testing manner, are suitable for large-scale production lines, save labor, are accurate in test result and high in testing efficiency, and can save the testing cost of the MEMS product.
Description
Technical field
The present invention relates to a kind of automatic checkout system and detection method, especially a kind of wafer scale automatic checkout system and detection method of MEMS fault of construction belong to the technical field that the MEMS sensor detects.
Background technology
Along with the development of technology of Internet of things, need a large amount of sensors that dissimilar data are gathered, the production of therefore adopting batch minute manufacturing technology to carry out the MEMS sensor has great significance.Wherein, the MEMS packaging of the fiber grating sensors occupies 40% to 80% cost in whole MEMS device.For use or the packaging cost of MEMS sensor, can reduce the threshold that the MEMS sensor comes into the market by the method that reduces the cost of encapsulation own on the one hand; Can improve on the other hand and the detection efficiency that promotes the MEMS sensor and accuracy, the device of avoiding producing defective in manufacture process enters follow-up encapsulation link, thus the waste resource.
According to present achievement in research, the defective that usually exists in the MEMS structure has: warpage and corrosion and structural break etc. that the layering of the adhesion of movable member, the particle contamination on the device, structure, the tired crackle that produces, stress gradient produce.Manufacture the field at traditional integrated circuit, more perfect chip detecting system has been arranged, but because the three-dimensional structure of MEMS and movable characteristics thereof, can't it comprehensively be detected with traditional integrated circuit checkout equipment, particularly to the detection of MEMS three-dimensional structure inside and the test of dynamic perfromance.Current, usually come the three-dimensional structure of MEMS is carried out Static Detection with scanning electron microscope on the one hand, judge whether there is defective in the structure; Can use on the other hand the doppler vibration measuring system that the movable structures such as MEMS cantilever are carried out dynamic test.
For example, the people such as the Tang Jieying of Southeast China University have proposed a kind of method of using the doppler instrument vibration measuring system that MEMS micro girder construction adhesion characteristics is detected in 2007, the method is used the function generator of doppler instrument to load swept-frequency signal and is driven the sample vibration, and laser beam focused on by on the geodesic structure, at last structural vibration amplitude versus frequency characte and the theoretical value that records compared, thereby judge whether there is adhesion defects in this structure.2009, the human hairs such as the Rong Hua of Nanjing Normal University understand a kind of method of on-line measurement MEMS membrane stress gradient, the method is by using non-contacting optical interference method to measure the radius-of-curvature of film, the more anti-stress gradients that push away wherein of parameter such as the Young modulus by membraneous material, Poisson ratio.2010, the people such as the Xue Chenyang of Northcentral University used the surface topography of the MEMS of infrared-interference technique team device to measure, and can assess the parameters such as roughness of MEMS device surface.
Analyze above-mentioned research background as can be known, is no lack of at present static and dynamic scheme in the measuring method for the MEMS structure, but the deficiency that they own together is: measuring ability is single, automaticity is low, sensing range is little etc., these are not enough so that these methods only can be used in the laboratory, can't be applied to large-scale MEMS production line.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of wafer scale automatic checkout system and detection method of MEMS fault of construction is provided, it can realize contactless Non-Destructive Testing, automaticity is high,, detection efficiency and accuracy of detection are high, reduce the testing cost of MEMS product.
According to technical scheme provided by the invention, the wafer scale automatic checkout system of described MEMS fault of construction comprises the control computing machine and for the crystal wafer platform of placing wafer to be measured, described crystal wafer platform links to each other with the control computing machine by the crystal wafer platform controller; Be placed with probe station on the described crystal wafer platform, described probe station links to each other with the control computing machine by the probe station controller; Described control computing machine also with for the test module that obtains natural frequency and image is electrically connected;
Described control computing machine obtains the standard model Two-dimensional Color Image that is positioned at standard model on the crystal wafer platform and the standard model natural frequency of standard model by test module, probe station, and the standard model natural frequency of described standard model Two-dimensional Color Image and standard model is stored in the control computing machine;
The wafer to be measured that will comprise some testing samples is positioned on the crystal wafer platform, and utilizes the testing sample alignment mark of testing sample to aim at test module; The control computing machine utilizes test module to obtain the testing sample Two-dimensional Color Image of testing sample, and the control computing machine compares described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image; When first threshold default in the result of testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image contrast and the control computing machine is not mated, the control computing machine is according to the defect type of comparing result record testing sample, and control crystal wafer platform by the crystal wafer platform controller and move, so that the next testing sample in the wafer to be measured is detected;
When first threshold default in testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image comparing result and the control computing machine is mated, the control computing machine passes through the probe station controller so that probe station drives corresponding testing sample vibration, test module detects the testing sample natural frequency of testing sample, and described testing sample natural frequency is transferred in the control computing machine; The control computing machine is with testing sample natural frequency and the contrast of standard model natural frequency, when Second Threshold default in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine does not mate, the control computing machine is according to the defect type of comparing result record testing sample, and control crystal wafer platform by the crystal wafer platform controller and move, so that the next testing sample in the wafer to be measured is detected;
When Second Threshold coupling default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine, the control computing machine utilizes test module again to obtain the testing sample Two-dimensional Color Image of testing sample, and with described testing sample Two-dimensional Color Image and the contrast of standard model Two-dimensional Color Image, the control computing machine only records described comparing result, then move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in the wafer to be measured is detected, until after all testing samples in the wafer to be measured all detected, the testing result of corresponding testing sample was exported on the control computing machine wafer to be measured that will record.
Described test module comprises surface topographic apparatus fo and laser vibration measurer.
Described standard model is for the MEMS chip of not encapsulation or use transparent material to carry out the MEMS chip that transparent material makes progress after the wafer-level package; Described testing sample is not for encapsulating the MEMS chip on the wafer to be measured or using transparent material to carry out MEMS chip on transparent material makes progress after the wafer-level package the wafer to be measured.
The defective of described control computer recording testing sample comprises that bending, adhesion, the material of MEMS structure before and after vibration is redundant, lack the material disappearance or can the MEMS structure restPose.
When described control computing machine compares testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, if each pixel of testing sample Two-dimensional Color Image all can obtain corresponding height value, the difference of the height value of control computing machine calculating testing sample Two-dimensional Color Image All Ranges and the height value of standard model Two-dimensional Color Image corresponding region; If the control computing machine calculates the difference obtain in the All Ranges when all mating with the first threshold of presetting, then control the computer-made decision testing sample corresponding with the testing sample Two-dimensional Color Image and do not have surface imperfection; If computing machine calculates the difference obtain respective regions when not mating with default first threshold, there is surface imperfection in the corresponding region of then controlling the computer-made decision testing sample.
When described control computing machine compares testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, if the testing sample Two-dimensional Color Image can not be obtained height value corresponding to each pixel, the control computing machine extracts the rgb value of each pixel of testing sample Two-dimensional Color Image, the difference of the rgb value of the rgb value of pixel and standard model Two-dimensional Color Image corresponding region in the control computing machine calculating extraction testing sample Two-dimensional Color Image All Ranges; If the control computing machine calculates the difference obtain in the All Ranges when all mating with the first threshold of presetting, then control the computer-made decision testing sample corresponding with the testing sample Two-dimensional Color Image and do not have surface imperfection; If computing machine calculates the difference obtain respective regions when not mating with default first threshold, there is surface imperfection in the corresponding region of then controlling the computer-made decision testing sample.
When there are alignment error in described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, after the control computing machine compared testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, band-like image difference concentrated area appearred in the error image edge after the contrast; When the 3rd default in described band-like image difference concentrated area and control computing machine threshold value do not mate or the width of band-like image difference concentrated area and control computing machine in predetermined width difference value when not mating, there is surface imperfection in control computer-made decision testing sample.
A kind of similar technical scheme, the wafer scale automatic checkout system of described MEMS fault of construction comprises the control computing machine and for the crystal wafer platform of placing wafer to be measured, described crystal wafer platform links to each other with the control computing machine by the crystal wafer platform controller; Be placed with probe station on the described crystal wafer platform, described probe station links to each other with the control computing machine by the probe station controller; Described control computing machine also with for the test module that obtains natural frequency and image is electrically connected;
Described control computing machine obtains the standard model Two-dimensional Color Image that is positioned at standard model on the crystal wafer platform and the standard model natural frequency of standard model by test module, probe station, and the standard model natural frequency of described standard model Two-dimensional Color Image and standard model is stored in the control computing machine;
The wafer to be measured that will comprise some testing samples is positioned on the crystal wafer platform, and utilizes the testing sample alignment mark of testing sample to aim at test module; So that probe station drives corresponding testing sample vibration, test module detects the testing sample natural frequency of testing sample to the control computing machine by prober controller, and described testing sample natural frequency is transferred in the control computing machine; The control computing machine is with testing sample natural frequency and the contrast of standard model natural frequency, when Second Threshold default in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine does not mate, the control computing machine is according to the defect type of comparing result record testing sample, and control crystal wafer platform by the crystal wafer platform controller and move, so that the next testing sample in the wafer to be measured is detected;
When Second Threshold coupling default in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine, the control computing machine utilizes test module to obtain the testing sample Two-dimensional Color Image of testing sample, and the control computing machine compares described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image;
When first threshold default in the result of testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image contrast and the control computing machine is not mated, the control computing machine is according to the defect type of comparing result record testing sample, and control crystal wafer platform by the crystal wafer platform controller and move, so that the next testing sample in the wafer to be measured is detected;
When first threshold default in testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image comparing result and the control computing machine is mated, the testing result of control computer recording testing sample; After the control computing machine all detects all testing samples in the wafer to be measured, result's output of corresponding testing sample on the wafer to be measured that the control computing machine will record.
A kind of wafer scale automatic testing method of MEMS fault of construction, described wafer scale automatic testing method comprises the steps:
A, selection standard sample, and described standard model placed on the crystal wafer platform, take the standard model alignment mark of standard model as reference, with test module alignment criteria sample;
B, control computer control test module obtain the standard model Two-dimensional Color Image of standard model, and the described standard model Two-dimensional Color Image of control Computer Storage;
C, control computing machine load the swept frequency excitation signal by probe station controller control probe station to standard model, make the vibration-generating of standard model, and the control computing machine utilizes test module to obtain and the standard model natural frequency of storage standards sample;
D, remove the standard model on the crystal wafer platform, and choose wafer to be measured; Utilize the testing sample alignment mark of the testing sample on the wafer to be measured to be placed on the crystal wafer platform, and aim at test module, and in the control computing machine, set the correlation parameter of testing sample on the wafer to be measured;
E, control computer control test module obtain the testing sample Two-dimensional Color Image of corresponding testing sample on the wafer to be measured, and the control computing machine compares testing sample Two-dimensional Color Image and the standard model Two-dimensional Color Image of obtaining;
F, when first threshold default in the comparing result between testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image and the control computing machine is not mated, defective corresponding to numbering, position and comparing result of the control described testing sample of computer recording in wafer to be measured; When described testing sample is on the wafer to be measured during last testing sample, the detection defective output that the control computing machine will record, otherwise the control computing machine moves according to required parameter by crystal wafer platform controller control crystal wafer platform, to carry out the detection of next testing sample;
G, when first threshold coupling default in the comparing result between testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image and the control computing machine, so that probe station loads the swept frequency excitation signal, testing sample vibrates the control computing machine by the probe station controller; The control computing machine obtained and stored described testing sample by test module testing sample natural frequency, and the control computing machine compares described testing sample natural frequency and standard model natural frequency;
H, when Second Threshold default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine does not mate, defective corresponding to numbering, position and comparing result of the control described testing sample of computer recording in wafer to be measured; When described testing sample is on the wafer to be measured during last testing sample, the detection defective output that the control computing machine will record, otherwise the control computing machine moves according to required parameter by crystal wafer platform controller control crystal wafer platform, to carry out the detection of next testing sample;
I, when Second Threshold coupling default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine, the control computing machine obtains the two or two coloured image of testing sample again by test module; The control computing machine is with the described testing sample Two-dimensional Color Image of again obtaining and the contrast of standard model Two-dimensional Color Image;
Among j, the above-mentioned steps i, no matter control computing machine to the result of the testing sample Two-dimensional Color Image again obtained and the contrast of standard model Two-dimensional Color Image whether with the control computing machine in default first threshold coupling, defective corresponding to numbering, position and comparing result of the control described testing sample of computer recording in wafer to be measured; When described testing sample is on the wafer to be measured during last testing sample, the control computing machine is with the testing result output of record, otherwise the control computing machine moves according to required parameter by crystal wafer platform controller control crystal wafer platform, to carry out the detection of next testing sample, until the control computing machine all detects all testing samples in the wafer to be measured.
Described standard model is for the MEMS chip of not encapsulation or use transparent material to carry out the MEMS chip that transparent material makes progress after the wafer-level package;
Described testing sample is not for encapsulating the MEMS chip on the wafer to be measured or using transparent material to carry out MEMS chip on transparent material makes progress after the wafer-level package the wafer to be measured.
Advantage of the present invention:
1, the wafer scale automatic checkout system of the MEMS device of the present invention's proposition is the wafer scale automatic checkout system, can realize the automatic detection of MEMS device on a large scale, detect and need not to contact the MEMS structure, can guarantee that the MEMS structure is intact, save manpower, promote the accuracy and the efficient that detect.
2, the wafer scale automatic testing method of the MEMS device that proposes of the present invention can be at the same time or separately detects the number of drawbacks situation of MEMS structure, wherein Static Detection is based on surface topography image principle of contrast, and detection of dynamic is based on vibration measurement with laser frequency principle of contrast; Automaticity is high,, detection efficiency and accuracy of detection are high, reduce the testing cost of MEMS product.
Description of drawings
Fig. 1 is structured flowchart of the present invention.
Fig. 2 is overhaul flow chart of the present invention.
Fig. 3 is the structural representation of existing standard sample and carrier substrate.
Fig. 4 is the schematic diagram of the MEMS structure of generation vertical direction adhesion defects.
Fig. 5 is the schematic diagram of the MEMS structure of generation warpage defective.
Fig. 6 is the schematic diagram of the MEMS structure of occurred level direction adhesion defects and material redundancy.
Fig. 7 is the schematic diagram that the MEMS structure of crack defect, protruding defective and depression defect occurs on the surface.
Fig. 8 is the inner schematic diagram that the MEMS structure of crack defect, protruding defective and depression defect occurs.
Fig. 9 is the get standard samples schematic diagram of Two-dimensional Color Image of the present invention.
Figure 10 is the schematic diagram that the present invention obtains the testing sample Two-dimensional Color Image.
Figure 11 is the result images after testing sample Two-dimensional Color Image of the present invention and the contrast of standard model Two-dimensional Color Image.
Description of reference numerals: 1-controls computing machine, the 2-surface topographic apparatus fo, the 3-laser vibration measurer, the 4-test module, the 5-crystal wafer platform, 6-crystal wafer platform controller, the 7-probe station, 8-probe station controller, 9-wafer to be measured, the 10-testing sample, the 11-test probe, the 12-standard model, the 13-carrier substrate, the vertical adhesion defects of 14-, 15-warpage defective, the horizontal adhesion defects of 16-, the redundant defective of 17-material, the 18-surface crack defect, 19-rat defective, 20-surface depression defect, 21-underbead crack defective, 22-internal protrusion defective, 23-inner recess defective, 24-standard model Two-dimensional Color Image, 25-testing sample Two-dimensional Color Image, 26-comparing result image, the belt-like zone that the misalignment of 27-image produces, the 28-defect area, 29-standard model alignment mark and 30-testing sample carrier substrate.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As shown in Figure 1: the wafer scale automatic checkout system of MEMS fault of construction of the present invention, comprise that control computing machine 1 reaches the crystal wafer platform 5 that is used for placing wafer 9 to be measured, described crystal wafer platform 5 links to each other with control computing machine 1 by crystal wafer platform controller 6; Be placed with probe station 7 on the described crystal wafer platform 5, described probe station 7 links to each other with control computing machine 1 by probe station controller 8; Described control computing machine 1 also with for the test module 4 that obtains natural frequency and image is electrically connected; Wherein, test module 4 comprises surface topographic apparatus fo 2 and laser vibration measurer 3, and described surface topographic apparatus fo 2 and laser vibration measurer 3 all are electrically connected with control computing machine 1.
Crystal wafer platform 5 can carry out XYZ three axles and angular adjustment, and the mode of motion of crystal wafer platform 5 cooperates with control computing machine 1 by crystal wafer platform controller 6 to be finished.In the embodiment of the invention, control computing machine 1, test module 4, crystal wafer platform 5, crystal wafer platform controller 6, probe station 7 and probe station controller 8 all can obtain by outsourcing.Described control computing machine 1 is used for making test module 4 begin test to test module 4 transmitted signals, and is used for receiving and store test module 4 measured image and frequency data, carries out at last the processing of image and data, generates final test report.Described control computing machine 1 also is used for making crystal wafer platform 5 under the control of crystal wafer platform controller 6 to circle platform controller 6 transmitted signals, moves according to set various parameters on control computing machine 1; The movable information that also is used for the crystal wafer platform 5 of reception crystal wafer platform controller 6 feedbacks.Described control computing machine 1 also is used for to probe station controller 8 transmitted signals, makes probe station 7 under the control of probe station controller 8, carries out the loading of electric signal and removes according to set various parameters on control computing machine 1; Also be used for receiving probe station 7 job informations of probe station controller 8 feedbacks.
Described control computing machine 1 obtains the standard model Two-dimensional Color Image 24 that is positioned at standard model 12 on the crystal wafer platform 5 and the standard model natural frequency of standard model 12 by test module 4, probe station 7, and the standard model natural frequency of described standard model Two-dimensional Color Image 24 and standard model 12 is stored in the control computing machine 1.After control computing machine 1 obtains the standard model Two-dimensional Color Image 24 and standard model natural frequency of standard model 12, standard model 12 is taken out from crystal wafer platform 5, place with convenient follow-up wafer to be measured 9.
The wafer to be measured 9 that will comprise some testing samples 10 is positioned on the crystal wafer platform 5, and utilize the testing sample alignment mark of testing sample 10 to aim at test module 4, after carrying out above-mentioned aligning, can be so that the testing sample Two-dimensional Color Image 25 that test module 4 obtains be corresponding with standard model Two-dimensional Color Image 24; Control computing machine 1 utilizes test module 4 to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and control computing machine 1 compares described testing sample Two-dimensional Color Image 25 with standard model Two-dimensional Color Image 24; When testing sample Two-dimensional Color Image 25 is not mated with control computing machine 1 interior default first threshold with the result of standard model Two-dimensional Color Image 24 contrasts, control computing machine 1 is according to the defect type of comparing result record testing sample 10, and control crystal wafer platforms 5 by crystal wafer platform controller 6 and move, so that the next testing samples 10 in the wafer 9 to be measured are detected;
When testing sample Two-dimensional Color Image 25 is mated with control computing machine 1 interior default first threshold with standard model Two-dimensional Color Image 24 comparing results, control computing machine 1 passes through probe station controller 8 so that probe station 7 drives 10 vibrations of corresponding testing sample, test module 4 detects the testing sample natural frequency of testing sample 10, and described testing sample natural frequency is transferred in the control computing machine 1; Control computing machine 1 is with testing sample natural frequency and the contrast of standard model natural frequency, when the result of described testing sample natural frequency and the contrast of standard model natural frequency is not mated with control computing machine 1 interior default Second Threshold, control computing machine 1 is according to the defect type of comparing result record testing sample 10, and control crystal wafer platforms 5 by crystal wafer platform controller 6 and move, so that the next testing samples 10 in the wafer 9 to be measured are detected;
When the result of testing sample natural frequency and the contrast of standard model natural frequency is mated with control computing machine 1 interior default Second Threshold, control computing machine 1 utilizes test module 4 again to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and with described testing sample Two-dimensional Color Image 25 and 24 contrasts of standard model Two-dimensional Color Image, control computing machine 1 only records described comparing result, and control crystal wafer platforms 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in the wafer 9 to be measured is detected, until after all testing samples 10 in the wafer to be measured 9 all detected, the testing result of corresponding testing sample 10 was exported on the wafer to be measured 9 that control computing machine 1 will record.The defective of described control computing machine 1 record testing sample 10 comprises that bending, adhesion, the material of MEMS structure before and after vibration is redundant, lack the material disappearance or can the MEMS structure restPose.The testing result of described control computing machine 1 output is that defect type or the testing sample 10 of testing sample 10 do not exist defective.
In the embodiment of the invention, can also detect operation, be specially;
The wafer to be measured 9 that will comprise some testing samples 10 is positioned on the crystal wafer platform 5, and utilizes the testing sample alignment mark of testing sample 10 to aim at test module 4; So that probe station 7 drives 10 vibrations of corresponding testing sample, test module 4 detects the testing sample natural frequency of testing sample 10 to control computing machine 1 by prober controller 8, and described testing sample natural frequency is transferred in the control computing machine 1; Control computing machine 1 is with testing sample natural frequency and the contrast of standard model natural frequency, when the result of described testing sample natural frequency and the contrast of standard model natural frequency is not mated with control computing machine 1 interior default Second Threshold, control computing machine 1 is according to the defect type of comparing result record testing sample 10, and control crystal wafer platforms 5 by crystal wafer platform controller 6 and move, so that the next testing samples 10 in the wafer 9 to be measured are detected;
When the result of described testing sample natural frequency and the contrast of standard model natural frequency is mated with control computing machine 1 interior default Second Threshold, control computing machine 1 utilizes test module 4 to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and control computing machine 1 compares described testing sample Two-dimensional Color Image 25 with standard model Two-dimensional Color Image 24;
When testing sample Two-dimensional Color Image 25 is not mated with control computing machine 1 interior default first threshold with the result of standard model Two-dimensional Color Image 24 contrasts, control computing machine 1 is according to the defect type of comparing result record testing sample 10, and control crystal wafer platforms 5 by crystal wafer platform controller 6 and move, so that the next testing samples 10 in the wafer 9 to be measured are detected;
When testing sample Two-dimensional Color Image 25 is mated with control computing machine 1 interior default first threshold with standard model Two-dimensional Color Image 24 comparing results, the testing result of control computing machine 1 record testing sample 10; After all testing samples 10 in 1 pair of wafer 9 to be measured of control computing machine all detect, result's output of corresponding testing sample 10 on the wafer to be measured 9 that control computing machine 1 will record.
As shown in Figure 2: utilize the wafer scale automatic checkout system of above-mentioned MEMS fault of construction, can obtain the wafer scale automatic testing method of following MEMS fault of construction, wherein, the automatic testing method of described wafer scale comprises the steps:
A, selection standard sample 12, and described standard model 12 placed on the crystal wafer platform 5, take the standard model alignment mark 29 of standard model 12 as reference, with test module 4 alignment criteria samples 12;
Described standard model 12 standard models 12 are for the MEMS chip of not encapsulation or use transparent material to carry out the MEMS chip that transparent material makes progress after the wafer-level package.In the embodiment of the invention, standard model 12 is the MEMS structure that does not encapsulate, and standard model 12 is positioned on the carrier substrate 13, as shown in Figure 3; Standard model alignment mark 29 is set on the carrier substrate 13.During test module 4 alignment criteria sample 12, be the test probe 11 alignment criteria samples 12 with test module 4.Standard model 12 can adopt existing conventional detection method to detect, so that standard model 12 is not for existing the MEMS of any fault of construction, with the convenient contrast foundation that provides when testing sample 10 is detected.
B, control computing machine 1 control test module 4 obtain the standard model Two-dimensional Color Image 24 of standard model 12, and the described standard model Two-dimensional Color Image 24 of control computing machine 1 storage;
As shown in Figure 9: control computing machine 1 sends test signal to test module 4, obtains the standard model Two-dimensional Color Image 24 of standard model 12 by the surface topographic apparatus fo 2 in the test module 4, is stored in the control computing machine 1 so that the foundation of conduct comparison.
C, control computing machine 1 load the swept frequency excitation signals by 7 pairs of standard models of probe station controller 8 control probe stations 12, make the vibration-generating of standard model 12, and control computing machine 1 utilizes test module 4 to obtain and the standard model natural frequency of storage standards sample 12;
After the standard model natural frequency of control computing machine 1 storage standards sample 12, another parameter that the standard model natural frequency of standard model 12 is detected as testing sample 10.
D, remove the standard model 12 on the crystal wafer platform 5, and choose wafer 9 to be measured; Utilize the testing sample alignment mark of the testing sample 10 on the wafer 9 to be measured to be placed on the crystal wafer platform 5, and aim at test module 4, and at the correlation parameter of controlling testing sample 10 on the computing machine 1 interior setting wafer 9 to be measured;
Comprise several testing samples 10 in the wafer 9 to be measured, described testing sample 10 is the MEMS structure.In the embodiment of the invention, described testing sample 10 is not for encapsulating the MEMS chip on the wafer 9 to be measured or using transparent material to carry out MEMS chip on transparent material makes progress after the wafer-level package the wafer to be measured 9.On each testing sample 10 the testing sample alignment mark is set all, utilize the testing sample alignment mark to aim at the standard model alignment mark 29 on the standard model 12, make testing sample 10 identical with the position of standard model 12 in the visual field of the test probe 11 of test module 4.Wafer 9 to be measured comprises wafer carrying substrate 30 to be measured.
The parameters such as the layout of the spacing, testing sample 10 that the correlation parameter of testing sample 10 comprises 10 of quantity, the testing samples of testing sample 10 on control computing machine 1 interior setting wafer 9 to be measured on wafer 9 to be measured, frequency departure tolerance limit, height difference tolerance limit, edge bias tolerance limit.Be the parameters such as 30,18 millimeters of the spacings of testing sample 10,5 microns of layout, frequency departure tolerance limit 5%, height value deviation tolerance limit 5%, the edge bias tolerance limit of testing sample 10 on wafer 9 to be measured such as the quantity at control computing machine 1 interior setting testing sample 10.By above-mentioned parameter is set, control computing machine 1 can determine whether all testing samples 10 are all detected, and determines according to threshold values such as described tolerance limits whether the testing sample 10 of detection exists defective, and when having defective, the type of associated disadvantages.
E, control computing machine 1 control test module 4 obtain the testing sample Two-dimensional Color Image 25 of corresponding testing sample 10 on the wafer 9 to be measured, and control computing machine 1 compares the testing sample Two-dimensional Color Image 25 of obtaining with standard model Two-dimensional Color Image 24;
As shown in figure 10: be the testing sample Two-dimensional Color Image 25 of obtaining.Owing in steps d, having determined the position in testing sample 10 and the standard model 12, therefore the regional location of 24 of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image has correspondence, by corresponding contrast, can determine the zones of different of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24.
F, when the comparing result of 24 of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image does not mate with control computing machine 1 interior default first threshold, defective corresponding to numbering, position and comparing result of the control computing machine 1 described testing sample 10 of record in wafer 9 to be measured; When described testing sample 10 is on the wafer 9 to be measured during last testing sample 10, the detection defective output that control computing machine 1 will record, otherwise control computing machine 1 moves according to required parameter by crystal wafer platform controller 6 control crystal wafer platforms 5, to carry out the detection of next testing sample 10;
As shown in figure 11: obtain comparing result image 26 after the contrast that testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image are 24; Judge the defect type of wafer 10 to be measured according to the difference of comparing result image 26, the defect type of described wafer 10 to be measured comprises surface imperfection or inherent vice; Among Fig. 4 for there being number vertical direction adhesion defects 14, have warpage defective 15 among Fig. 5, among Fig. 6 for existing among the redundant defective 17 of horizontal adhesion defects 16 and material, Fig. 7 for existing among surface crack defect 18, rat defective 19 and surperficial depression defect 20, Fig. 8 for existing underbead crack defective 21, internal protrusion defective 22 to reach-inner recess defective 23;
Particularly, when described control computing machine 1 compares testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, if testing sample Two-dimensional Color Image 25 each pixel all can obtain corresponding height value, the difference of the height value of control computing machine 1 calculating testing sample Two-dimensional Color Image 25 All Rangeses and the height value of standard model Two-dimensional Color Image 24 corresponding regions; If control computing machine 1 calculates difference in the All Ranges when all mating with default first threshold, then control computing machine 1 judgement and testing sample Two-dimensional Color Image 25 corresponding testing samples 10 and do not have surface imperfection; When if the difference that computing machine 1 calculates respective regions is not mated with default first threshold, then control computing machine 1 and judge that there is surface imperfection in the corresponding region of testing sample 10.
When described control computing machine 1 compares testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, if testing sample Two-dimensional Color Image 25 can not be obtained height value corresponding to each pixel, control the RGB(RGB that computing machine 1 extracts testing sample Two-dimensional Color Image 25 each pixel) value, the difference of the rgb value of the rgb value of pixel and standard model Two-dimensional Color Image 24 corresponding regions in control computing machine 1 calculating extraction testing sample Two-dimensional Color Image 25 All Rangeses; If control computing machine 1 calculates difference in the All Ranges when all mating with default first threshold, then control computing machine 1 judgement and testing sample Two-dimensional Color Image 25 corresponding testing samples 10 and do not have surface imperfection; When if the difference that computing machine 1 calculates respective regions is not mated with default first threshold, then control computing machine 1 and judge that there is surface imperfection in the corresponding region of testing sample 10.
When there is alignment error in described testing sample Two-dimensional Color Image 25 with standard model Two-dimensional Color Image 24, after control 1 pair of testing sample Two-dimensional Color Image 25 of computing machine and standard model Two-dimensional Color Image 24 compared, band-like image difference concentrated area appearred in the error image edge after the contrast; Do not mate or the width of band-like image difference concentrated area when not mating with control computing machine 1 interior predetermined width difference value when the 3rd default in described band-like image difference concentrated area and the control computing machine 1 threshold value, control computing machine 1 judges that there is surface imperfection in testing sample 10.
Above-mentioned control computing machine 1 interior default first threshold and the 3rd threshold value preset according to different testing sample 10, to satisfy the different requirements that detect.Described threshold value coupling refers to that difference in the comparing result in control computing machine 1 interior marginal range, do not mate otherwise be.
G, when the comparing result of 24 of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image during with control computing machine 1 interior default first threshold coupling, so that probe station 7 loads the swept frequency excitation signal, testing sample 10 vibrates control computing machine 1 by probe station controller 8; Control computing machine 1 obtained and stored described testing sample 10 by test module 4 testing sample natural frequency, and control computing machine 1 compares described testing sample natural frequency and standard model natural frequency;
H, when the result of testing sample natural frequency and standard model natural frequency contrast is not mated with control computing machine 1 interior default Second Threshold, defective corresponding to numbering, position and comparing result of the control computing machine 1 described testing sample 10 of record in wafer 9 to be measured; When described testing sample 10 is on the wafer 9 to be measured during last testing sample 10, the detection defective output that control computing machine 1 will record, otherwise control computing machine 1 moves according to required parameter by crystal wafer platform controller 6 control crystal wafer platforms 5, to carry out the detection of next testing sample 10;
When contrasting by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, and during with control computing machine 1 interior default first threshold coupling, can't think that there is defective scarcely in testing sample 10, also need to compare to determine by the parameter of natural frequency.When result and Second Threshold do not mate after the testing sample natural frequency that obtains and the contrast of standard model natural frequency, then can regard as testing sample 10 and have the rear defective of vibration.After crystal wafer platform controller 6 control crystal wafer platforms 5 move, all need testing sample 10 corresponding on the wafer 9 to be measured is aimed at the test probe 11 of test module 4, and automatically focus and the interference fringe adjusting, to satisfy the requirement of accuracy of detection.
I, as the result of testing sample natural frequency and standard model natural frequency contrast during with control computing machine 1 interior default Second Threshold coupling, control computing machine 1 obtains the two or two coloured image 25 of testing sample 10 again by test module 4; Control computing machine 1 is with the described testing sample Two-dimensional Color Image of again obtaining 25 and 24 contrasts of standard model Two-dimensional Color Image;
In the embodiment of the invention, again obtain the purpose of testing sample Two-dimensional Color Image 25, be in order to judge can whether testing sample 10 exist defective and corresponding defective restPose after the vibration after vibration, thereby can carry out omnibearing accurate detection to testing sample 10.Contrast operation's complexity of usually, testing sample 10 being carried out natural frequency is greater than carries out the complexity that testing sample Two-dimensional Color Image 25 compares operation to testing sample 10.In the embodiment of the invention, all be to contrast by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24 first, and then carry out the contrast of testing sample natural frequency and standard model natural frequency, determine whether by comparing result to have defective; During the benefit of this operating process, when by after testing sample Two-dimensional Color Image 25 and 24 contrasts of standard model Two-dimensional Color Image and preset first threshold value when not mating, can think that there is defective in testing sample 10, and needn't carry out again the contrast operation of natural frequency, can reduce the complexity of contrast, improve detection efficiency.And only have when testing sample Two-dimensional Color Image 25 is mated with standard model Two-dimensional Color Image 24 comparing results and first threshold, just need to utilize the method for natural frequency contrast to carry out vibration detection, improve accuracy of detection.The art personnel should know, also can be first in the embodiment of the invention to testing sample natural frequency and the contrast of standard model natural frequency of testing sample 10, then carry out the contrast of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, repeat no more herein.
Among j, the above-mentioned steps i, no matter control 1 pair in computing machine the testing sample Two-dimensional Color Image 25 of again obtaining and the result that standard model Two-dimensional Color Image 24 contrasts and whether mate defective corresponding to numbering, position and comparing result of the control computing machine 1 described testing sample 10 of record in wafer 9 to be measured with control computing machine 1 interior default first threshold; When described testing sample 10 is on the wafer 9 to be measured during last testing sample 10, control computing machine 1 is with the testing result output of record, otherwise control computing machine 1 moves according to required parameter by crystal wafer platform controller 6 control crystal wafer platforms 5, to carry out the detection of next testing sample 10, until all testing samples 10 in 1 pair of wafer 9 to be measured of control computing machine all detect.
In the embodiment of the invention, control computing machine 1 with the equal record of the testing result of whole testing process, and is judged the result of each record when a testing sample 10 is detected; Namely again obtain testing sample Two-dimensional Color Image 25 when controlling computing machine 1, and when comparing by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, described comparing result is recorded in the control computing machine 1, the comparing result of described record can exist simultaneously with the comparing result that records before, can conveniently consulting and judge what can testing sample 10 restPose after vibration.
The present invention utilizes the principle of the contrast of surface topography image and the contrast of vibration measurement with laser frequency, and surface imperfection and the inherent vice of MEMS structure are carried out the detection of Static and dynamic, judges whether prepared MEMS product can enter follow-up encapsulation flow process.This detection system and detection scheme are that wafer scale detects automatically, and are contactless Non-Destructive Testing, are applicable to large-scale production line, save manpower, and testing result is accurate, detection efficiency is high, can save the MEMS product at the cost of context of detection.
This embodiment can be used for structure of the present invention and manufacture process are described, but enforcement of the present invention never only limits to this embodiment.In the scope that does not break away from the present invention and appended claim, various replacements, variation and modification all are possible.Therefore, protection scope of the present invention is not limited to embodiment and the disclosed content of accompanying drawing.
Claims (10)
1. the wafer scale automatic checkout system of a MEMS fault of construction, it is characterized in that: comprise control computing machine (1) and be used for placing the crystal wafer platform (5) of wafer to be measured (9), described crystal wafer platform (5) links to each other with control computing machine (1) by crystal wafer platform controller (6); Be placed with probe station (7) on the described crystal wafer platform (5), described probe station (7) links to each other with control computing machine (1) by probe station controller (8); Described control computing machine (1) also with for the test module (4) that obtains natural frequency and image is electrically connected;
Described control computing machine (1) obtains the standard model Two-dimensional Color Image (24) that is positioned at the upper standard model (12) of crystal wafer platform (5) and the standard model natural frequency of standard model (12) by test module (4), probe station (7), and the standard model natural frequency of described standard model Two-dimensional Color Image (24) and standard model (12) is stored in the control computing machine (1);
The wafer to be measured (9) that will comprise some testing samples (10) is positioned on the crystal wafer platform (5), and utilizes the testing sample alignment mark of testing sample (10) to aim at test module (4); Control computing machine (1) utilizes test module (4) to obtain the testing sample Two-dimensional Color Image (25) of testing sample (10), and control computing machine (1) compares described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24); When the first threshold of presetting in the result of testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) contrast and the control computing machine (1) is not mated, control computing machine (1) is according to the defect type of comparing result record testing sample (10), and mobile by crystal wafer platform controller (6) control crystal wafer platform (5), so that the next testing sample (10) in the wafer to be measured (9) is detected;
When first threshold default in testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) comparing result and the control computing machine (1) is mated, control computing machine (1) passes through probe station controller (8) so that probe station (7) drives corresponding testing sample (10) vibration, test module (4) detects the testing sample natural frequency of testing sample (10), and described testing sample natural frequency is transferred in the control computing machine (1); Control computing machine (1) is with testing sample natural frequency and the contrast of standard model natural frequency, when the Second Threshold of presetting in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1) does not mate, control computing machine (1) is according to the defect type of comparing result record testing sample (10), and mobile by crystal wafer platform controller (6) control crystal wafer platform (5), so that the next testing sample (10) in the wafer to be measured (9) is detected;
When Second Threshold default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1) mates, control computing machine (1) utilizes test module (4) again to obtain the testing sample Two-dimensional Color Image (25) of testing sample (10), and with described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) contrast, control computing machine (1) only records described comparing result, then mobile by crystal wafer platform controller (6) control crystal wafer platform (5), so that the next testing sample (10) in the wafer to be measured (9) is detected, until after all testing samples (10) in the wafer to be measured (9) all detected, control computing machine (1) wafer to be measured (9) that will record was gone up the testing result of corresponding testing sample (10) and is exported.
2. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1, it is characterized in that: described test module comprises surface topographic apparatus fo (2) and laser vibration measurer (3).
3. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1 is characterized in that: described standard model (12) is for the MEMS chip of not encapsulation or use transparent material to carry out the MEMS chip that transparent material makes progress after the wafer-level package; Described testing sample (10) is not for encapsulating the MEMS chip on the wafer to be measured (9) or using transparent material to carry out MEMS chip on transparent material makes progress after the wafer-level package the wafer to be measured (9).
4. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1 is characterized in that: the defective of described control computing machine (1) record testing sample (10) comprises that bending, adhesion, the material of MEMS structure before and after vibration is redundant, lack the material disappearance or can the MEMS structure restPose.
5. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1, it is characterized in that: described control computing machine (1) is with testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) when comparing, if each pixel of testing sample Two-dimensional Color Image (25) all can obtain corresponding height value, the difference of the height value of control computing machine (1) calculating testing sample Two-dimensional Color Image (25) All Ranges and the height value of standard model Two-dimensional Color Image (24) corresponding region; If control computing machine (1) calculates difference in the All Ranges when all mating with default first threshold, then control computing machine (1) the judgement testing sample (10) corresponding with testing sample Two-dimensional Color Image (25) and do not have surface imperfection; When if the difference that computing machine (1) calculates respective regions is not mated with default first threshold, then control computing machine (1) and judge that there is surface imperfection in the corresponding region of testing sample (10).
6. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1 or 5, it is characterized in that: described control computing machine (1) is with testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) when comparing, if testing sample Two-dimensional Color Image (25) can not be obtained height value corresponding to each pixel, control computing machine (1) extracts the rgb value of each pixel of testing sample Two-dimensional Color Image (25), the difference of the rgb value of the rgb value of pixel and standard model Two-dimensional Color Image (24) corresponding region in control computing machine (1) calculating extraction testing sample Two-dimensional Color Image (25) All Ranges; If control computing machine (1) calculates difference in the All Ranges when all mating with default first threshold, then control computing machine (1) the judgement testing sample (10) corresponding with testing sample Two-dimensional Color Image (25) and do not have surface imperfection; When if the difference that computing machine (1) calculates respective regions is not mated with default first threshold, then control computing machine (1) and judge that there is surface imperfection in the corresponding region of testing sample (10).
7. the wafer scale automatic checkout system of MEMS fault of construction according to claim 1, it is characterized in that: described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) are when existing alignment error, after control computing machine (1) compared testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24), band-like image difference concentrated area appearred in the error image edge after the contrast; When the 3rd default in described band-like image difference concentrated area and control computing machine (1) threshold value do not mate or the width of band-like image difference concentrated area and control computing machine (1) in predetermined width difference value when not mating, there is surface imperfection in control computing machine (1) judgement testing sample (10).
8. the wafer scale automatic checkout system of a MEMS fault of construction, it is characterized in that: comprise control computing machine (1) and be used for placing the crystal wafer platform (5) of wafer to be measured (9), described crystal wafer platform (5) links to each other with control computing machine (1) by crystal wafer platform controller (6); Be placed with probe station (7) on the described crystal wafer platform (5), described probe station (7) links to each other with control computing machine (1) by probe station controller (8); Described control computing machine (1) also with for the test module (4) that obtains natural frequency and image is electrically connected;
Described control computing machine (1) obtains the standard model Two-dimensional Color Image (24) that is positioned at the upper standard model (12) of crystal wafer platform (5) and the standard model natural frequency of standard model (12) by test module (4), probe station (7), and the standard model natural frequency of described standard model Two-dimensional Color Image (24) and standard model (12) is stored in the control computing machine (1);
The wafer to be measured (9) that will comprise some testing samples (10) is positioned on the crystal wafer platform (5), and utilizes the testing sample alignment mark of testing sample (10) to aim at test module (4); Control computing machine (1) passes through prober controller (8) so that probe station (7) drives corresponding testing sample (10) vibration, test module (4) detects the testing sample natural frequency of testing sample (10), and described testing sample natural frequency is transferred in the control computing machine (1); Control computing machine (1) is with testing sample natural frequency and the contrast of standard model natural frequency, when the Second Threshold of presetting in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1) does not mate, control computing machine (1) is according to the defect type of comparing result record testing sample (10), and mobile by crystal wafer platform controller (6) control crystal wafer platform (5), so that the next testing sample (10) in the wafer to be measured (9) is detected;
When Second Threshold default in the result of described testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1) mates, control computing machine (1) utilizes test module (4) to obtain the testing sample Two-dimensional Color Image (25) of testing sample (10), and control computing machine (1) compares described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24);
When the first threshold of presetting in the result of testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) contrast and the control computing machine (1) is not mated, control computing machine (1) is according to the defect type of comparing result record testing sample (10), and mobile by crystal wafer platform controller (6) control crystal wafer platform (5), so that the next testing sample (10) in the wafer to be measured (9) is detected;
When first threshold default in testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) comparing result and the control computing machine (1) is mated, control the testing result that computing machine (1) records testing sample (10); After control computing machine (1) all detects all testing samples (10) in the wafer to be measured (9), result's output of the upper corresponding testing sample (10) of the wafer to be measured (9) that control computing machine (1) will record.
9. the wafer scale automatic testing method of a MEMS fault of construction is characterized in that, described wafer scale automatic testing method comprises the steps:
(a), selection standard sample (12), and described standard model (12) placed on the crystal wafer platform (5), take the standard model alignment mark (29) of standard model (12) as reference, with test module (4) alignment criteria sample (12);
(b), control computing machine (1) control test module (4) obtains the standard model Two-dimensional Color Image (24) of standard model (12), and controls computing machine (1) storage described standard model Two-dimensional Color Image (24);
(c), control computing machine (1) loads the swept frequency excitation signal by probe station controller (8) control probe station (7) to standard model (12), make the vibration-generating of standard model (12), control computing machine (1) utilizes test module (4) to obtain the also standard model natural frequency of storage standards sample (12);
(d), remove the standard model (12) on the crystal wafer platform (5), and choose wafer to be measured (9); Utilize the testing sample alignment mark of the testing sample (10) on the wafer to be measured (9) to be placed on the crystal wafer platform (5), and aim at test module (4), and in control computing machine (1), set the correlation parameter that wafer to be measured (9) is gone up testing sample (10);
(e), control computing machine (1) control test module (4) obtains the testing sample Two-dimensional Color Image (25) of the upper corresponding testing sample (10) of wafer to be measured (9), control computing machine (1) compares the testing sample Two-dimensional Color Image (25) of obtaining with standard model Two-dimensional Color Image (24);
(f), when first threshold default in the comparing result between testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) and control computing machine (1) is not mated, control computing machine (1) and record defective corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); When described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), the detection defective output that control computing machine (1) will record, otherwise control computing machine (1) moves according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5), to carry out the detection of next testing sample (10);
(g), when first threshold default in the comparing result between testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) and the control computing machine (1) is mated, so that probe station (7) loads the swept frequency excitation signal, testing sample (10) vibrates control computing machine (1) by probe station controller (8); Control computing machine (1) obtained and stored described testing sample (10) by test module (4) testing sample natural frequency, and control computing machine (1) compares described testing sample natural frequency and standard model natural frequency;
(h), when Second Threshold default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1) does not mate, control computing machine (1) and record defective corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); When described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), the detection defective output that control computing machine (1) will record, otherwise control computing machine (1) moves according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5), to carry out the detection of next testing sample (10);
(i), when Second Threshold coupling default in the result of testing sample natural frequency and standard model natural frequency contrast and the control computing machine (1), control computing machine (1) obtains testing sample (10) again by test module (4) the two or two coloured image (25); Control computing machine (1) is with the described testing sample Two-dimensional Color Image (25) of again obtaining and standard model Two-dimensional Color Image (24) contrast;
(j), in the above-mentioned steps (i), no matter control computing machine (1) to the result of the testing sample Two-dimensional Color Image (25) again obtained and standard model Two-dimensional Color Image (24) contrast whether with control computing machine (1) in default first threshold coupling, control computing machine (1) records defective corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); When described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), control computing machine (1) is with the testing result output of record, otherwise control computing machine (1) moves according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5), to carry out the detection of next testing sample (10), until control computing machine (1) all detects all testing samples (10) in the wafer to be measured (9).
10. the wafer scale automatic testing method of described MEMS fault of construction according to claim 9 is characterized in that: described standard model (12) is for the MEMS chip of not encapsulation or use transparent material to carry out the MEMS chip that transparent material makes progress after the wafer-level package; Described testing sample (10) is not for encapsulating the MEMS chip on the wafer to be measured (9) or using transparent material to carry out MEMS chip on transparent material makes progress after the wafer-level package the wafer to be measured (9).
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