CN102854196B - Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects - Google Patents
Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects Download PDFInfo
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Abstract
The invention relates to a wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and a test method of the MEMS structure defects. The wafer-level automatic test system comprises a control computer and a wafer platform for placing a to-be-tested wafer; the wafer platform is connected with the control computer through a wafer platform controller; a probe station is arranged on the wafer platform, and is connected with the control computer through a probe station controller; and the control computer is electrically connected with a test module used for acquiring natural frequency and images. The static and dynamic test is carried out on the surface defects and the internal defects of the MEMS structure through the use of the principles of surface topography image comparison and laser vibration measuring frequency comparison so as to judge whether an MEMS product can enter a following packaging process. The testing system and the testing method adopt a wafer-level automatic testing manner and a noncontact nondestructive testing manner, are suitable for large-scale production lines, save labor, are accurate in test result and high in testing efficiency, and can save the testing cost of the MEMS product.
Description
Technical field
The present invention relates to a kind of automatic checkout system and detection method, especially a kind of wafer scale automatic checkout system and detection method of MEMS fault of construction, belong to the technical field that MEMS sensor detects.
Background technology
Along with the development of technology of Internet of things, need a large amount of sensors to gather dissimilar data, the production that therefore adopts batch minute manufacturing technology to carry out MEMS sensor has great significance.Wherein, being encapsulated in whole MEMS device of MEMS sensor occupied 40% to 80% cost.For use or the packaging cost of MEMS sensor, can reduce the threshold that MEMS sensor comes into the market by the method that reduces the cost of encapsulation own on the one hand; Can improve on the other hand and the detection efficiency and the accuracy that promote MEMS sensor, avoid the device that produces defect in manufacture process to enter follow-up encapsulation link, thus waste resource.
According to current achievement in research, the defect conventionally existing in MEMS structure has: warpage and corrosion and structural break etc. that the particle contamination on adhesion, the device of movable member, the layering of structure, the tired crackle producing, stress gradient produce.Manufacture field at traditional integrated circuit, there is more perfect chip detecting system, but due to the three-dimensional structure of MEMS and movable feature thereof, cannot comprehensively detect with traditional integrated circuit checkout equipment the particularly detection to MEMS three-dimensional structure inside and the test of dynamic perfromance to it.Current, on the one hand conventionally by scanning electron microscope, the three-dimensional structure of MEMS is carried out to Static Detection, judge in structure, whether there is defect; Can use on the other hand doppler vibration measuring system to carry out dynamic test to movable structures such as MEMS cantilevers.
For example, the people such as the Tang Jieying of Southeast China University have proposed a kind of method that uses doppler instrument vibration measuring system to detect MEMS micro girder construction adhesion characteristics in 2007, the method is used the function generator of doppler instrument to load swept-frequency signal and drives sample vibration, and laser beam is focused on by geodesic structure, finally the structural vibration amplitude versus frequency characte and the theoretical value that record are compared, thereby judge in this structure, whether there is adhesion defects.2009, the human hairs such as the Rong Hua of Nanjing Normal University understand a kind of method of on-line measurement MEMS membrane stress gradient, the method is measured the radius-of-curvature of film by the non-contacting optical interference method of use, then by the anti-stress gradient pushing away wherein of the parameter such as Young modulus, Poisson ratio of membraneous material.2010, the people such as the Xue Chenyang of Northcentral University used the surface topography of the MEMS of infrared-interference technique team device to measure, and can assess the parameters such as the roughness of MEMS device surface.
Analyze above-mentioned research background known, in measuring method for MEMS structure, is no lack of at present static and dynamic scheme, but the deficiency that they own together is: measuring ability is single, automaticity is low, sensing range is little etc., these deficiencies only can be used these methods in laboratory, cannot be applied to large-scale MEMS production line.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of wafer scale automatic checkout system and detection method of MEMS fault of construction is provided, it can realize contactless Non-Destructive Testing, automaticity is high,, detection efficiency and accuracy of detection are high, reduce the testing cost of MEMS product.
According to technical scheme provided by the invention, the wafer scale automatic checkout system of described MEMS fault of construction, comprises control computing machine and for placing the crystal wafer platform of wafer to be measured, described crystal wafer platform is connected with control computing machine by crystal wafer platform controller; On described crystal wafer platform, be placed with probe station, described probe station is connected with control computing machine by probe station controller; Described control computing machine also with for the test module that obtains natural frequency and image is electrically connected;
Described control computing machine is obtained and is positioned at the standard model Two-dimensional Color Image of standard model on crystal wafer platform and the standard model natural frequency of standard model by test module, probe station, and the standard model natural frequency of described standard model Two-dimensional Color Image and standard model is stored in and is controlled in computing machine;
The wafer to be measured that comprises some testing samples is positioned on crystal wafer platform, and utilizes the testing sample alignment mark of testing sample to aim at test module; Control computing machine and utilize test module to obtain the testing sample Two-dimensional Color Image of testing sample, and control computing machine described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image are contrasted; In the time that testing sample Two-dimensional Color Image is not mated with first threshold default in control computing machine with the result of standard model Two-dimensional Color Image contrast, control computing machine records testing sample defect type according to comparing result, and move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in wafer to be measured is detected;
In the time that testing sample Two-dimensional Color Image is mated with first threshold default in control computing machine with standard model Two-dimensional Color Image comparing result, controlling computing machine makes probe station drive corresponding testing sample vibration by probe station controller, test module detects the testing sample natural frequency of testing sample, and described testing sample natural frequency is transferred to and is controlled in computing machine; Control computing machine by testing sample natural frequency and the contrast of standard model natural frequency, in the time that described testing sample natural frequency is not mated with Second Threshold default in control computing machine with the result of standard model natural frequency contrast, control computing machine records testing sample defect type according to comparing result, and move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in wafer to be measured is detected;
In the time that testing sample natural frequency is mated with Second Threshold default in control computing machine with the result of standard model natural frequency contrast, controlling computing machine utilizes test module again to obtain the testing sample Two-dimensional Color Image of testing sample, and by described testing sample Two-dimensional Color Image and the contrast of standard model Two-dimensional Color Image, control computing machine and only record described comparing result, then move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in wafer to be measured is detected, until after all testing samples in wafer to be measured all detect, control computing machine by the testing result output of corresponding testing sample on the wafer to be measured of record.
Described test module comprises surface topographic apparatus fo and laser vibration measurer.
Described standard model is the MEMS chip that do not encapsulate or uses transparent material to carry out transparent material MEMS chip upwards after wafer-level package; Described testing sample is not encapsulate MEMS chip on wafer to be measured or use transparent material to carry out the MEMS chip on transparent material wafer to be measured upwards after wafer-level package.
The defect of described control computer recording testing sample comprises that can bending, adhesion, material redundancy, scarce material disappearance or the MEMS structure of MEMS structure before and after vibration restPose.
When described control computing machine contrasts testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, if the each pixel of testing sample Two-dimensional Color Image all can obtain corresponding height value, control the difference of the height value of computing machine calculating testing sample Two-dimensional Color Image All Ranges and the height value of standard model Two-dimensional Color Image corresponding region; Calculate when obtaining difference in All Ranges and all mating with default first threshold if control computing machine, control the computer-made decision testing sample corresponding with testing sample Two-dimensional Color Image and do not have surface imperfection; If computing machine calculates the difference that obtains respective regions while not mating with default first threshold, there is surface imperfection in the corresponding region of controlling computer-made decision testing sample.
When described control computing machine contrasts testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, if testing sample Two-dimensional Color Image can not be obtained the height value that each pixel is corresponding, control the rgb value that computing machine extracts the each pixel of testing sample Two-dimensional Color Image, the difference of the rgb value of pixel and the rgb value of standard model Two-dimensional Color Image corresponding region in control computing machine calculating extraction testing sample Two-dimensional Color Image All Ranges; Calculate when obtaining difference in All Ranges and all mating with default first threshold if control computing machine, control the computer-made decision testing sample corresponding with testing sample Two-dimensional Color Image and do not have surface imperfection; If computing machine calculates the difference that obtains respective regions while not mating with default first threshold, there is surface imperfection in the corresponding region of controlling computer-made decision testing sample.
While there is alignment error in described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image, after controlling computing machine testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image being contrasted, there is band-like image difference concentrated area in the error image edge after contrast; When described band-like image difference concentrated area with control that the 3rd threshold value default in computing machine is not mated or the width of band-like image difference concentrated area with control computing machine in predetermined width difference value while not mating, there is surface imperfection in control computer-made decision testing sample.
A kind of similarly technical scheme, the wafer scale automatic checkout system of described MEMS fault of construction, comprises control computing machine and for placing the crystal wafer platform of wafer to be measured, described crystal wafer platform is connected with control computing machine by crystal wafer platform controller; On described crystal wafer platform, be placed with probe station, described probe station is connected with control computing machine by probe station controller; Described control computing machine also with for the test module that obtains natural frequency and image is electrically connected;
Described control computing machine is obtained and is positioned at the standard model Two-dimensional Color Image of standard model on crystal wafer platform and the standard model natural frequency of standard model by test module, probe station, and the standard model natural frequency of described standard model Two-dimensional Color Image and standard model is stored in and is controlled in computing machine;
The wafer to be measured that comprises some testing samples is positioned on crystal wafer platform, and utilizes the testing sample alignment mark of testing sample to aim at test module; Control computing machine and make probe station drive corresponding testing sample vibration by prober controller, test module detects the testing sample natural frequency of testing sample, and described testing sample natural frequency is transferred to and is controlled in computing machine; Control computing machine by testing sample natural frequency and the contrast of standard model natural frequency, in the time that described testing sample natural frequency is not mated with Second Threshold default in control computing machine with the result of standard model natural frequency contrast, control computing machine records testing sample defect type according to comparing result, and move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in wafer to be measured is detected;
In the time that described testing sample natural frequency is mated with Second Threshold default in control computing machine with the result of standard model natural frequency contrast, control computing machine and utilize test module to obtain the testing sample Two-dimensional Color Image of testing sample, and control computing machine described testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image are contrasted;
In the time that testing sample Two-dimensional Color Image is not mated with first threshold default in control computing machine with the result of standard model Two-dimensional Color Image contrast, control computing machine records testing sample defect type according to comparing result, and move by crystal wafer platform controller control crystal wafer platform, so that the next testing sample in wafer to be measured is detected;
In the time that testing sample Two-dimensional Color Image is mated with first threshold default in control computing machine with standard model Two-dimensional Color Image comparing result, control the testing result of computer recording testing sample; After control computing machine all detects all testing samples in wafer to be measured, control computing machine by the result output of corresponding testing sample on the wafer to be measured of record.
A wafer scale automatic testing method for MEMS fault of construction, described wafer scale automatic testing method comprises the steps:
A, selection standard sample, and described standard model is placed on crystal wafer platform, take the standard model alignment mark of standard model as reference, by test module alignment criteria sample;
B, control computer control test module obtain the standard model Two-dimensional Color Image of standard model, and standard model Two-dimensional Color Image described in control Computer Storage;
C, control computing machine load swept frequency excitation signal by probe station controller control probe station to standard model, make vibrating of standard model, control computing machine and utilize test module to obtain the also standard model natural frequency of storage standards sample;
D, remove the standard model on crystal wafer platform, and choose wafer to be measured; Utilize the testing sample alignment mark of the testing sample on wafer to be measured to be placed on crystal wafer platform, and aim at test module, and in control computing machine, set the correlation parameter of testing sample on wafer to be measured;
E, control computer control test module obtain the testing sample Two-dimensional Color Image of corresponding testing sample on wafer to be measured, control computing machine the testing sample Two-dimensional Color Image of obtaining and standard model Two-dimensional Color Image are contrasted;
F, when the comparing result between testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image with control computing machine in default first threshold while not mating, control defect corresponding to numbering, position and comparing result of testing sample in wafer to be measured described in computer recording; When described testing sample is on wafer to be measured when last testing sample, control computing machine by the detection defect output of record, move according to required parameter by crystal wafer platform controller control crystal wafer platform otherwise control computing machine, to carry out the detection of next testing sample;
G, when the comparing result between testing sample Two-dimensional Color Image and standard model Two-dimensional Color Image with control computing machine in default first threshold while mating, control computing machine and make probe station load swept frequency excitation signal by probe station controller, testing sample vibration; Control computing machine was obtained and stored described testing sample testing sample natural frequency by test module, and control computing machine contrasts described testing sample natural frequency and standard model natural frequency;
H, when the result of testing sample natural frequency and standard model natural frequency contrast with control computing machine in default Second Threshold while not mating, defect corresponding to numbering, position and comparing result of testing sample in wafer to be measured described in control computer recording; When described testing sample is on wafer to be measured when last testing sample, control computing machine by the detection defect output of record, move according to required parameter by crystal wafer platform controller control crystal wafer platform otherwise control computing machine, to carry out the detection of next testing sample;
I, when the result of testing sample natural frequency and standard model natural frequency contrast with control computing machine in default Second Threshold while mating, control computing machine obtains the two or two coloured image of testing sample again by test module; Control computing machine by the described testing sample Two-dimensional Color Image of again obtaining and the contrast of standard model Two-dimensional Color Image;
In j, above-mentioned steps i, no matter control computing machine to the result of the testing sample Two-dimensional Color Image of again obtaining and standard model Two-dimensional Color Image contrast whether with control computing machine in default first threshold mate, defect corresponding to numbering, position and comparing result of testing sample in wafer to be measured described in control computer recording; When described testing sample is on wafer to be measured when last testing sample, control computing machine by the testing result output of record, otherwise controlling computing machine moves according to required parameter by crystal wafer platform controller control crystal wafer platform, to carry out the detection of next testing sample, until control computing machine, all testing samples in wafer to be measured are all detected.
Described standard model is the MEMS chip that do not encapsulate or uses transparent material to carry out transparent material MEMS chip upwards after wafer-level package;
Described testing sample is not encapsulate MEMS chip on wafer to be measured or use transparent material to carry out the MEMS chip on transparent material wafer to be measured upwards after wafer-level package.
Advantage of the present invention:
The wafer scale automatic checkout system of the MEMS device that 1, the present invention proposes is wafer scale automatic checkout system, can realize the automatic detection of MEMS device on a large scale, detect the structure without contact MEMS, can guarantee that MEMS structure is intact, save manpower, promote the accuracy and the efficiency that detect.
The wafer scale automatic testing method of the MEMS device that 2, the present invention proposes can detect the number of drawbacks situation of MEMS structure at the same time or separately, wherein Static Detection is based on surface topography image principle of contrast, and detection of dynamic is based on vibration measurement with laser frequency principle of contrast; Automaticity is high,, detection efficiency and accuracy of detection are high, reduce the testing cost of MEMS product.
Accompanying drawing explanation
Fig. 1 is structured flowchart of the present invention.
Fig. 2 is overhaul flow chart of the present invention.
Fig. 3 is the structural representation of existing standard sample and carrier substrate.
Fig. 4 is the schematic diagram that the MEMS structure of vertical direction adhesion defects occurs.
Fig. 5 is the schematic diagram that the MEMS structure of warpage defect occurs.
Fig. 6 is the schematic diagram of the MEMS structure of occurred level direction adhesion defects and material redundancy.
Fig. 7 is the schematic diagram that the MEMS structure of crack defect, protruding defect and depression defect occurs on surface.
Fig. 8 is the schematic diagram of the inner MEMS structure that crack defect, protruding defect and depression defect occur.
Fig. 9 is the get standard samples schematic diagram of Two-dimensional Color Image of the present invention.
Figure 10 is the schematic diagram that the present invention obtains testing sample Two-dimensional Color Image.
Figure 11 is the result images after testing sample Two-dimensional Color Image of the present invention and the contrast of standard model Two-dimensional Color Image.
Description of reference numerals: 1-controls computing machine, 2-surface topographic apparatus fo, 3-laser vibration measurer, 4-test module, 5-crystal wafer platform, 6-crystal wafer platform controller, 7-probe station, 8-probe station controller, 9-wafer to be measured, 10-testing sample, 11-test probe, 12-standard model, 13-carrier substrate, the vertical adhesion defects of 14-, 15-warpage defect, the horizontal adhesion defects of 16-, 17-material redundancy defect, 18-surface crack defect, 19-rat defect, 20-surface depression defect, 21-underbead crack defect, 22-internal protrusion defect, 23-inner recess defect, 24-standard model Two-dimensional Color Image, 25-testing sample Two-dimensional Color Image, 26-comparing result image, the belt-like zone that the misalignment of 27-image produces, 28-defect area, 29-standard model alignment mark and 30-testing sample carrier substrate.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 1: the wafer scale automatic checkout system of MEMS fault of construction of the present invention, comprise and control computing machine 1 and for placing the crystal wafer platform 5 of wafer 9 to be measured, described crystal wafer platform 5 by crystal wafer platform controller 6 with control computing machine 1 and be connected; On described crystal wafer platform 5, be placed with probe station 7, described probe station 7 is connected with control computing machine 1 by probe station controller 8; Described control computing machine 1 is also electrically connected with the test module 4 for obtaining natural frequency and image; Wherein, test module 4 comprises surface topographic apparatus fo 2 and laser vibration measurer 3, and described surface topographic apparatus fo 2 and laser vibration measurer 3 are all electrically connected with control computing machine 1.
Crystal wafer platform 5 can carry out XYZ tri-axles and angular adjustment, and the mode of motion of crystal wafer platform 5 has coordinated with control computing machine 1 by crystal wafer platform controller 6.In the embodiment of the present invention, control computing machine 1, test module 4, crystal wafer platform 5, crystal wafer platform controller 6, probe station 7 and probe station controller 8 and all can obtain by outsourcing.Described control computing machine 1, for make test module 4 start test to test module 4 transmitted signals, and for receiving and store the measured image of test module 4 and frequency data, finally carries out image and data processing, generates final test report.Described control computing machine 1 also, for to circle platform controller 6 transmitted signals, makes crystal wafer platform 5 under the control of crystal wafer platform controller 6, moves according to set various parameters on control computing machine 1; Also for receiving the movable information of the crystal wafer platform 5 that crystal wafer platform controller 6 feeds back.Described control computing machine 1 also, for to probe station controller 8 transmitted signals, makes probe station 7 under the control of probe station controller 8, carries out the loading of electric signal and removes according to set various parameters on control computing machine 1; Also probe station 7 job informations that feed back for receiving probe station controller 8.
Described control computing machine 1 is obtained and is positioned at the standard model Two-dimensional Color Image 24 of standard model 12 on crystal wafer platform 5 and the standard model natural frequency of standard model 12 by test module 4, probe station 7, and the standard model natural frequency of described standard model Two-dimensional Color Image 24 and standard model 12 is stored in and is controlled in computing machine 1.Control computing machine 1 and obtain after the standard model Two-dimensional Color Image 24 and standard model natural frequency of standard model 12, standard model 12 is taken out from crystal wafer platform 5, to facilitate follow-up wafer to be measured 9 to place.
The wafer to be measured 9 that comprises some testing samples 10 is positioned on crystal wafer platform 5, and utilize the testing sample alignment mark of testing sample 10 to aim at test module 4, carry out after above-mentioned aligning, the testing sample Two-dimensional Color Image 25 that can make test module 4 obtain is corresponding with standard model Two-dimensional Color Image 24; Control computing machine 1 and utilize test module 4 to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and control computing machine 1 described testing sample Two-dimensional Color Image 25 is contrasted with standard model Two-dimensional Color Image 24; The result contrasting with standard model Two-dimensional Color Image 24 when testing sample Two-dimensional Color Image 25 is when controlling the interior default first threshold of computing machine 1 and do not mate, control computing machine 1 records testing sample 10 defect type according to comparing result, and control crystal wafer platform 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in wafer 9 to be measured is detected;
In the time that testing sample Two-dimensional Color Image 25 is mated with the interior default first threshold of control computing machine 1 with standard model Two-dimensional Color Image 24 comparing results, controlling computing machine 1 makes probe station 7 drive corresponding testing sample 10 to vibrate by probe station controller 8, test module 4 detects the testing sample natural frequency of testing sample 10, and described testing sample natural frequency is transferred to and is controlled in computing machine 1; Control computing machine 1 by testing sample natural frequency and the contrast of standard model natural frequency, in the time that described testing sample natural frequency is not mated with the interior default Second Threshold of control computing machine 1 with the result of standard model natural frequency contrast, control computing machine 1 records testing sample 10 defect type according to comparing result, and control crystal wafer platform 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in wafer 9 to be measured is detected;
In the time that testing sample natural frequency is mated with the interior default Second Threshold of control computing machine 1 with the result of standard model natural frequency contrast, controlling computing machine 1 utilizes test module 4 again to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and described testing sample Two-dimensional Color Image 25 is contrasted with standard model Two-dimensional Color Image 24, control computing machine 1 and only record described comparing result, and control crystal wafer platform 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in wafer 9 to be measured is detected, until after all testing samples 10 in wafer 9 to be measured all detect, control computing machine 1 by the testing result output of corresponding testing sample 10 on the wafer to be measured 9 of record.The defect that described control computing machine 1 records testing sample 10 comprises that can bending, adhesion, material redundancy, scarce material disappearance or the MEMS structure of MEMS structure before and after vibration restPose.The testing result that described control computing machine 1 is exported is that defect type or the testing sample 10 of testing sample 10 do not exist defect.
In the embodiment of the present invention, can also detect operation, be specially;
The wafer to be measured 9 that comprises some testing samples 10 is positioned on crystal wafer platform 5, and utilizes the testing sample alignment mark of testing sample 10 to aim at test module 4; Control computing machine 1 and make probe station 7 drive corresponding testing sample 10 to vibrate by prober controller 8, test module 4 detects the testing sample natural frequency of testing sample 10, and described testing sample natural frequency is transferred to and is controlled in computing machine 1; Control computing machine 1 by testing sample natural frequency and the contrast of standard model natural frequency, in the time that described testing sample natural frequency is not mated with the interior default Second Threshold of control computing machine 1 with the result of standard model natural frequency contrast, control computing machine 1 records testing sample 10 defect type according to comparing result, and control crystal wafer platform 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in wafer 9 to be measured is detected;
In the time that described testing sample natural frequency is mated with the interior default Second Threshold of control computing machine 1 with the result of standard model natural frequency contrast, control computing machine 1 and utilize test module 4 to obtain the testing sample Two-dimensional Color Image 25 of testing sample 10, and control computing machine 1 described testing sample Two-dimensional Color Image 25 is contrasted with standard model Two-dimensional Color Image 24;
The result contrasting with standard model Two-dimensional Color Image 24 when testing sample Two-dimensional Color Image 25 is when controlling the interior default first threshold of computing machine 1 and do not mate, control computing machine 1 records testing sample 10 defect type according to comparing result, and control crystal wafer platform 5 by crystal wafer platform controller 6 and move, so that the next testing sample 10 in wafer 9 to be measured is detected;
In the time that testing sample Two-dimensional Color Image 25 is mated with the interior default first threshold of control computing machine 1 with standard model Two-dimensional Color Image 24 comparing results, control computing machine 1 records the testing result of testing sample 10; After control computing machine 1 all detects all testing samples 10 in wafer 9 to be measured, control computing machine 1 by the result output of corresponding testing sample 10 on the wafer to be measured 9 of record.
As shown in Figure 2: utilize the wafer scale automatic checkout system of above-mentioned MEMS fault of construction, can obtain the wafer scale automatic testing method of following MEMS fault of construction, wherein, the automatic testing method of described wafer scale comprises the steps:
A, selection standard sample 12, and described standard model 12 is placed on crystal wafer platform 5, take the standard model alignment mark 29 of standard model 12 as reference, by test module 4 alignment criteria samples 12;
The MEMS chip that described standard model 12 standard models 12 are not encapsulation or use transparent material to carry out transparent material MEMS chip upwards after wafer-level package.In the embodiment of the present invention, standard model 12 is the MEMS structure not encapsulating, and standard model 12 is positioned on carrier substrate 13, as shown in Figure 3; Standard model alignment mark 29 is set on carrier substrate 13.When test module 4 alignment criteria sample 12, for by the test probe of test module 4 11 alignment criteria samples 12.Standard model 12 can adopt the detection method of existing routine to detect, and to make standard model 12 as there not being the MEMS of any fault of construction, provides contrast foundation when testing sample 10 detection to facilitate.
B, control computing machine 1 are controlled test module 4 and are obtained the standard model Two-dimensional Color Image 24 of standard model 12, and control computing machine 1 and store described standard model Two-dimensional Color Image 24;
As shown in Figure 9: control computing machine 1 and send test signal to test module 4, obtain the standard model Two-dimensional Color Image 24 of standard model 12 by the surface topographic apparatus fo 2 in test module 4, be stored in and control in computing machine 1 so that as the foundation of comparing.
C, control computing machine 1 are controlled probe station 7 by probe station controller 8 standard model 12 are loaded to swept frequency excitation signal, make vibrating of standard model 12, control computing machine 1 and utilize test module 4 to obtain the also standard model natural frequency of storage standards sample 12;
Control after the standard model natural frequency of computing machine 1 storage standards sample 12 another parameter that the standard model natural frequency of standard model 12 is detected as testing sample 10.
D, remove the standard model 12 on crystal wafer platform 5, and choose wafer 9 to be measured; Utilize the testing sample alignment mark of the testing sample 10 on wafer 9 to be measured to be placed on crystal wafer platform 5, and aim at test module 4, and at the correlation parameter of controlling testing sample 10 on the interior setting of computing machine 1 wafer 9 to be measured;
In wafer 9 to be measured, comprise several testing samples 10, described testing sample 10 is MEMS structure.In the embodiment of the present invention, described testing sample 10 is not for encapsulating the MEMS chip on wafer 9 to be measured or using transparent material to carry out the MEMS chip on transparent material wafer to be measured 9 upwards after wafer-level package.On each testing sample 10, testing sample alignment mark is all set, utilize testing sample alignment mark to aim at the standard model alignment mark 29 on standard model 12, make testing sample 10 identical with the position of standard model 12 in the visual field of the test probe 11 of test module 4.Wafer 9 to be measured comprises wafer carrying substrate 30 to be measured.
The parameters such as the layout of the spacing, testing sample 10 that comprises 10 of quantity, the testing samples of testing sample 10 at the correlation parameter of controlling testing sample 10 on the interior setting of computing machine 1 wafer 9 to be measured on wafer 9 to be measured, frequency departure tolerance limit, height difference tolerance limit, edge bias tolerance limit.As in the quantity that controls computing machine 1 interior setting testing sample 10 being 30, the parameter such as 18 millimeters of spacing, 5 microns of layout, frequency departure tolerance limit 5%, height value deviation tolerance limit 5%, the edge bias tolerance limit of testing sample 10 on wafer 9 to be measured of testing sample 10.By above-mentioned parameter is set, control computing machine 1 and can determine whether all testing samples 10 all to detect, and determine according to threshold values such as described tolerance limits whether the testing sample 10 of detection exists defect, and while there is defect, the type of associated disadvantages.
E, control computing machine 1 and control test module 4 and obtain the testing sample Two-dimensional Color Image 25 of corresponding testing sample 10 on wafer 9 to be measured, control computing machine 1 the testing sample Two-dimensional Color Image of obtaining 25 and standard model Two-dimensional Color Image 24 are contrasted;
As shown in figure 10: be the testing sample Two-dimensional Color Image 25 of obtaining.Due to the position of having determined in steps d in testing sample 10 and standard model 12, therefore the regional location between testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24 has correspondence, by corresponding contrast, can determine the zones of different of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24.
F, when the comparing result between testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24 is when controlling the interior default first threshold of computing machine 1 and do not mate, control computing machine 1 and record defect corresponding to numbering, position and comparing result of described testing sample 10 in wafer 9 to be measured; When described testing sample 10 is on wafer 9 to be measured when last testing sample 10, control computing machine 1 by the detection defect output of record, otherwise control computing machine 1 is controlled crystal wafer platform 5 by crystal wafer platform controller 6 and is moved according to required parameter, to carry out the detection of next testing sample 10;
As shown in figure 11: after the contrast between testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, obtain comparing result image 26; Judge the defect type of wafer 10 to be measured according to the difference of comparing result image 26, the defect type of described wafer 10 to be measured comprises surface imperfection or inherent vice; In Fig. 4 for there is number vertical direction adhesion defects 14, in Fig. 5, there is warpage defect 15, in Fig. 6 for exist in horizontal adhesion defects 16 and material redundancy defect 17, Fig. 7 for exist in surface crack defect 18, rat defect 19 and surperficial depression defect 20, Fig. 8 for exist underbead crack defect 21, internal protrusion defect 22 and-inner recess defect 23;
Particularly, when described control computing machine 1 contrasts testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, if the each pixel of testing sample Two-dimensional Color Image 25 all can obtain corresponding height value, control computing machine 1 calculates the difference of the height value of testing sample Two-dimensional Color Image 25 All Rangeses and the height value of standard model Two-dimensional Color Image 24 corresponding regions; If when controlling computing machine 1 and calculating difference in All Ranges and all mate with default first threshold, control the computing machine 1 judgement testing sample 10 corresponding with testing sample Two-dimensional Color Image 25 and do not have surface imperfection; If computing machine 1 calculates the difference of respective regions while not mating with default first threshold, control computing machine 1 and judge that the corresponding region of testing sample 10 exists surface imperfection.
When described control computing machine 1 contrasts testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, if testing sample Two-dimensional Color Image 25 can not be obtained the height value that each pixel is corresponding, control the RGB(RGB that computing machine 1 extracts testing sample Two-dimensional Color Image 25 each pixels) value, control computing machine 1 and calculate the difference of extracting the interior rgb value of pixel of testing sample Two-dimensional Color Image 25 All Rangeses and the rgb value of standard model Two-dimensional Color Image 24 corresponding regions; If when controlling computing machine 1 and calculating difference in All Ranges and all mate with default first threshold, control the computing machine 1 judgement testing sample 10 corresponding with testing sample Two-dimensional Color Image 25 and do not have surface imperfection; If computing machine 1 calculates the difference of respective regions while not mating with default first threshold, control computing machine 1 and judge that the corresponding region of testing sample 10 exists surface imperfection.
While there is alignment error with standard model Two-dimensional Color Image 24 in described testing sample Two-dimensional Color Image 25, after controlling computing machine 1 testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24 being contrasted, there is band-like image difference concentrated area in the error image edge after contrast; When described band-like image difference concentrated area with control that the 3rd threshold value default in computing machine 1 is not mated or the width of band-like image difference concentrated area when controlling the interior predetermined width difference value of computing machine 1 and do not mate, control computing machine 1 judges that testing sample 10 exists surface imperfection.
The interior default first threshold of above-mentioned control computing machine 1 and the 3rd threshold value preset according to different testing sample 10, to meet the different requirements that detect.Described threshold value is mated the difference referring in comparing result controlling in the interior marginal range of computing machine 1, does not mate otherwise be.
G, when the comparing result between testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24 is when controlling the interior default first threshold of computing machine 1 and mate, control computing machine 1 and make probe station 7 load swept frequency excitation signal by probe station controller 8, testing sample 10 vibrates; Control computing machine 1 was obtained and stored described testing sample 10 testing sample natural frequency by test module 4, and control computing machine 1 contrasts described testing sample natural frequency and standard model natural frequency;
H, when the result of testing sample natural frequency and standard model natural frequency contrast is when controlling the interior default Second Threshold of computing machine 1 and do not mate, control computing machine 1 records defect corresponding to numbering, position and comparing result of described testing sample 10 in wafer 9 to be measured; When described testing sample 10 is on wafer 9 to be measured when last testing sample 10, control computing machine 1 by the detection defect output of record, otherwise control computing machine 1 is controlled crystal wafer platform 5 by crystal wafer platform controller 6 and is moved according to required parameter, to carry out the detection of next testing sample 10;
When contrasting by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, and while coupling with the interior default first threshold of control computing machine 1, can't think that testing sample 10 exists defect scarcely, also need to compare to determine by the parameter of natural frequency.In the time that the testing sample natural frequency obtaining is not mated with Second Threshold with result after the contrast of standard model natural frequency, can regard as testing sample 10 and have the rear defect of vibration.After crystal wafer platform controller 6 is controlled crystal wafer platform 5 and moved, all need testing sample 10 corresponding on wafer 9 to be measured to aim at the test probe 11 of test module 4, and carry out focusing automatically and interference fringe adjusting, to meet the requirement of accuracy of detection.
I, when the result of testing sample natural frequency and standard model natural frequency contrast is when controlling the interior default Second Threshold of computing machine 1 and mate, control computing machine 1 obtains the two or two coloured image 25 of testing sample 10 again by test module 4; Controlling computing machine 1 contrasts the described testing sample Two-dimensional Color Image of again obtaining 25 with standard model Two-dimensional Color Image 24;
In the embodiment of the present invention, again obtain the object of testing sample Two-dimensional Color Image 25, be in order to judge can whether testing sample 10 exist defect and corresponding defect restPose after vibration after vibration, thereby can carry out omnibearing accurate detection to testing sample 10.Contrast operation's complexity of usually, testing sample 10 being carried out to natural frequency is greater than the complexity of testing sample 10 being carried out testing sample Two-dimensional Color Image 25 and carried out contrast operation.In the embodiment of the present invention, be all first to contrast by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, and then carry out the contrast of testing sample natural frequency and standard model natural frequency, determine whether and have defect by comparing result; When the benefit of this operating process, in the time not mating with preset first threshold value with 24 contrasts of standard model Two-dimensional Color Image are rear by testing sample Two-dimensional Color Image 25, can think that testing sample 10 exists defect, and needn't carry out again the contrast operation of natural frequency, can reduce the complexity of contrast, improve detection efficiency.And only have in the time that testing sample Two-dimensional Color Image 25 is mated with first threshold with standard model Two-dimensional Color Image 24 comparing results, just need to utilize the method for natural frequency contrast to carry out vibration detection, improve accuracy of detection.The art personnel should know, also the first testing sample natural frequency to testing sample 10 and the contrast of standard model natural frequency in the embodiment of the present invention, then carry out the contrast of testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, repeat no more herein.
In j, above-mentioned steps i, no matter control result that computing machine 1 contrasts with standard model Two-dimensional Color Image 24 the testing sample Two-dimensional Color Image 25 of again obtaining whether with control the interior default first threshold of computing machine 1 and mate, control computing machine 1 records defect corresponding to numbering, position and comparing result of described testing sample 10 in wafer 9 to be measured; When described testing sample 10 is on wafer 9 to be measured when last testing sample 10, control computing machine 1 by the testing result output of record, otherwise control computing machine 1 is controlled crystal wafer platform 5 by crystal wafer platform controller 6 and is moved according to required parameter, to carry out the detection of next testing sample 10, until control computing machine 1, all testing samples 10 in wafer 9 to be measured are all detected.
In the embodiment of the present invention, control computing machine 1 in the time that a testing sample 10 is detected, by all records of the testing result of whole testing process, and the result of each record is judged; again obtain testing sample Two-dimensional Color Image 25 when controlling computing machine 1, and while contrasting by testing sample Two-dimensional Color Image 25 and standard model Two-dimensional Color Image 24, described comparing result is recorded in to be controlled in computing machine 1, the comparing result of described record can exist with the comparing result recording before simultaneously, can conveniently consulting and judge what can testing sample 10 restPose after vibration.
The present invention utilizes the principle of the contrast of surface topography image and the contrast of vibration measurement with laser frequency, and the surface imperfection to MEMS structure and inherent vice are carried out the detection of Static and dynamic, judge whether prepared MEMS product can enter follow-up encapsulation flow process.This detection system and detection scheme are that wafer scale detects automatically, and are contactless Non-Destructive Testing, are applicable to large-scale production line, save manpower, and testing result is accurate, detection efficiency is high, can save the cost of MEMS product in context of detection.
This embodiment can be used for structure of the present invention and manufacture process are described, but enforcement of the present invention never only limits to this embodiment.Not departing from the scope of the present invention and appended claim, various replacements, variation and modification are all possible.Therefore, protection scope of the present invention is not limited to embodiment and the disclosed content of accompanying drawing.
Claims (5)
1. the wafer scale automatic testing method of a MEMS fault of construction, it is characterized in that: the method uses control computing machine (1) and for placing the crystal wafer platform (5) of wafer to be measured (9), described crystal wafer platform (5) is connected with control computing machine (1) by crystal wafer platform controller (6); On described crystal wafer platform (5), be placed with probe station (7), described probe station (7) is connected with control computing machine (1) by probe station controller (8); Described control computing machine (1) is also electrically connected with the test module (4) for obtaining natural frequency and image;
Described control computing machine (1) is obtained and is positioned at the upper standard model Two-dimensional Color Image (24) of standard model (12) of crystal wafer platform (5) and the standard model natural frequency of standard model (12) by test module (4), probe station (7), and the standard model natural frequency of described standard model Two-dimensional Color Image (24) and standard model (12) is stored in and is controlled in computing machine (1);
The wafer to be measured (9) that comprises some testing samples (10) is positioned over to crystal wafer platform (5) upper, and utilizes the testing sample alignment mark of testing sample (10) to aim at test module (4); Control computing machine (1) and utilize test module (4) to obtain the testing sample Two-dimensional Color Image (25) of testing sample (10), and control computing machine (1) described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) are contrasted; In the time that testing sample Two-dimensional Color Image (25) is not mated with first threshold default in control computing machine (1) with the result of standard model Two-dimensional Color Image (24) contrast, control computing machine (1) and record the defect type of testing sample (10) according to comparing result, and it is mobile to control crystal wafer platform (5) by crystal wafer platform controller (6), so that the next testing sample (10) in wafer to be measured (9) is detected;
In the time that testing sample Two-dimensional Color Image (25) is mated with first threshold default in control computing machine (1) with standard model Two-dimensional Color Image (24) comparing result, controlling computing machine (1) makes probe station (7) drive corresponding testing sample (10) vibration by probe station controller (8), test module (4) detects the testing sample natural frequency of testing sample (10), and described testing sample natural frequency is transferred to and is controlled in computing machine (1); Control computing machine (1) by testing sample natural frequency and the contrast of standard model natural frequency, in the time that described testing sample natural frequency is not mated with Second Threshold default in control computing machine (1) with the result of standard model natural frequency contrast, control computing machine (1) and record the defect type of testing sample (10) according to comparing result, and it is mobile to control crystal wafer platform (5) by crystal wafer platform controller (6), so that the next testing sample (10) in wafer to be measured (9) is detected;
In the time that testing sample natural frequency is mated with Second Threshold default in control computing machine (1) with the result of standard model natural frequency contrast, controlling computing machine (1) utilizes test module (4) again to obtain the testing sample Two-dimensional Color Image (25) of testing sample (10), and by described testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) contrast, control computing machine (1) and only record described comparing result, then control crystal wafer platform (5) by crystal wafer platform controller (6) mobile, so that the next testing sample (10) in wafer to be measured (9) is detected, until wafer to be measured (9) in all testing samples (10) all detect after, control computing machine (1) by the testing result output of the upper corresponding testing sample (10) of the wafer to be measured (9) of record,
When described control computing machine (1) contrasts testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24), if the each pixel of testing sample Two-dimensional Color Image (25) all can obtain corresponding height value, control the difference of the height value of computing machine (1) calculating testing sample Two-dimensional Color Image (25) All Ranges and the height value of standard model Two-dimensional Color Image (24) corresponding region; If when controlling computing machine (1) and calculating difference in All Ranges and all mate with default first threshold, control computing machine (1) the judgement testing sample (10) corresponding with testing sample Two-dimensional Color Image (25) and do not have surface imperfection; If computing machine (1) calculates the difference of respective regions while not mating with default first threshold, control computing machine (1) and judge that the corresponding region of testing sample (10) exists surface imperfection.
2. the wafer scale automatic testing method of MEMS fault of construction according to claim 1, it is characterized in that: when described control computing machine (1) contrasts testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24), if testing sample Two-dimensional Color Image (25) can not be obtained the height value that each pixel is corresponding, control the rgb value that computing machine (1) extracts the each pixel of testing sample Two-dimensional Color Image (25), control computing machine (1) and calculate the difference of extracting the interior rgb value of pixel of testing sample Two-dimensional Color Image (25) All Ranges and the rgb value of standard model Two-dimensional Color Image (24) corresponding region, if when controlling computing machine (1) and calculating difference in All Ranges and all mate with default first threshold, control computing machine (1) the judgement testing sample (10) corresponding with testing sample Two-dimensional Color Image (25) and do not have surface imperfection, if computing machine (1) calculates the difference of respective regions while not mating with default first threshold, control computing machine (1) and judge that the corresponding region of testing sample (10) exists surface imperfection.
3. the wafer scale automatic testing method of MEMS fault of construction according to claim 1, it is characterized in that: when described testing sample Two-dimensional Color Image (25) exists alignment error with standard model Two-dimensional Color Image (24), after controlling computing machine (1) testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) being contrasted, there is band-like image difference concentrated area in the error image edge after contrast; When described band-like image difference concentrated area with control computing machine (1) in default the 3rd threshold value do not mate or the width of band-like image difference concentrated area with control computing machine (1) in predetermined width difference value while not mating, there is surface imperfection in control computing machine (1) judgement testing sample (10).
4. a wafer scale automatic testing method for MEMS fault of construction, is characterized in that, described wafer scale automatic testing method comprises the steps:
(a), selection standard sample (12), and it is upper that described standard model (12) is placed in to crystal wafer platform (5), take the standard model alignment mark (29) of standard model (12) as reference, by test module (4) alignment criteria sample (12);
(b), control computing machine (1) is controlled test module (4) and is obtained the standard model Two-dimensional Color Image (24) of standard model (12), and controls computing machine (1) and store described standard model Two-dimensional Color Image (24);
(c), control computing machine (1) and control probe station (7) to standard model (12) loading swept frequency excitation signal by probe station controller (8), make vibrating of standard model (12), control computing machine (1) and utilize test module (4) to obtain the also standard model natural frequency of storage standards sample (12);
(d), remove the standard model (12) on crystal wafer platform (5), and choose wafer to be measured (9); Utilize the testing sample alignment mark of the testing sample (10) on wafer to be measured (9) to be placed on crystal wafer platform (5), and aim at test module (4), and at the correlation parameter of controlling the upper testing sample (10) of setting wafer to be measured (9) in computing machine (1);
(e), control computing machine (1) and control test module (4) and obtain the testing sample Two-dimensional Color Image (25) of the upper corresponding testing sample (10) of wafer to be measured (9), control computing machine (1) the testing sample Two-dimensional Color Image (25) of obtaining and standard model Two-dimensional Color Image (24) contrasted;
(f), when the comparing result between testing sample Two-dimensional Color Image (25) and standard model Two-dimensional Color Image (24) with control computing machine (1) in default first threshold while not mating, control computing machine (1) records defect corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); In the time that described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), control computing machine (1) by the detection defect output of record, move according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5) otherwise control computing machine (1), to carry out the detection of next testing sample (10);
(g), in the time that testing sample Two-dimensional Color Image (25) is mated with first threshold default in control computing machine (1) with the comparing result between standard model Two-dimensional Color Image (24), control computing machine (1) and make probe station (7) load swept frequency excitation signal by probe station controller (8), testing sample (10) vibration; Control computing machine (1) was obtained and stored described testing sample (10) testing sample natural frequency by test module (4), and control computing machine (1) contrasts described testing sample natural frequency and standard model natural frequency;
(h), when the result of testing sample natural frequency and standard model natural frequency contrast with control computing machine (1) in default Second Threshold while not mating, control computing machine (1) records defect corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); In the time that described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), control computing machine (1) by the detection defect output of record, move according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5) otherwise control computing machine (1), to carry out the detection of next testing sample (10);
, when the result of testing sample natural frequency and standard model natural frequency contrast with control computing machine (1) in default Second Threshold while mating, control computing machine (1) obtains the Two-dimensional Color Image (25) of testing sample (10) again by test module (4); Control computing machine (1) by the described testing sample Two-dimensional Color Image (25) of again obtaining and standard model Two-dimensional Color Image (24) contrast;
(j), above-mentioned steps (i) in, no matter control computing machine (1) whether the testing sample Two-dimensional Color Image (25) of again obtaining is mated with first threshold default in control computing machine (1) with the result of standard model Two-dimensional Color Image (24) contrast, control computing machine (1) and record defect corresponding to numbering, position and comparing result of described testing sample (10) in wafer to be measured (9); In the time that described testing sample (10) is upper last testing sample (10) of wafer to be measured (9), control computing machine (1) by the testing result output of record, otherwise controlling computing machine (1) moves according to required parameter by crystal wafer platform controller (6) control crystal wafer platform (5), to carry out the detection of next testing sample (10), until control computing machine (1), all testing samples (10) in wafer to be measured (9) are all detected.
5. the wafer scale automatic testing method of MEMS fault of construction according to claim 4, is characterized in that: the MEMS chip that described standard model (12) is not encapsulation or use transparent material to carry out transparent material MEMS chip upwards after wafer-level package;
Described testing sample (10) is not for encapsulating MEMS chip on wafer to be measured (9) or using transparent material to carry out the MEMS chip on transparent material wafer to be measured (9) upwards after wafer-level package.
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