CN116989704B - Comprehensive detection method, system and storage medium for wafer surface flatness - Google Patents
Comprehensive detection method, system and storage medium for wafer surface flatness Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 475
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- 238000000034 method Methods 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims description 55
- 239000011159 matrix material Substances 0.000 claims description 9
- 230000002159 abnormal effect Effects 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 4
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- 238000005259 measurement Methods 0.000 claims description 3
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- 238000007689 inspection Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 238000012858 packaging process Methods 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention discloses a comprehensive detection method, a system and a storage medium for the surface flatness of a wafer, and relates to the technical field of wafer detection. The wafer to be detected is divided into a plurality of detection units based on actual use requirements, flatness detection of the detection units is carried out in a laser ranging mode, contact between a detection instrument and the wafer in the detection process is avoided, damage of the wafer and the detection instrument is prevented, flatness detection is carried out on the whole wafer, and excessive flatness deviation superposition of the detection units is avoided.
Description
Technical Field
The invention relates to the technical field of wafer detection, in particular to a comprehensive detection method, system and storage medium for wafer surface flatness.
Background
Wafer refers to a silicon wafer used for manufacturing silicon semiconductor circuits, and the original material is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. After grinding, polishing and slicing, the silicon crystal bar forms a silicon wafer, namely the wafer, and the thermal stress in the packaging process can be changed due to the insufficient flatness of the wafer, so that the normal use of the chip is affected, and the requirement on the surface flatness of the wafer is very high.
At present, the detection methods for the flatness of the wafer are various in the market, but certain defects exist, when the probe type surface measuring instrument is used for detecting the surface of the wafer, the contact force or displacement between the probe and the surface of the wafer is measured to evaluate the flatness of the surface, the probe is contacted with the wafer, the surface of the wafer is easy to be damaged, the quality of the wafer is reduced, the detection efficiency is low when the flatness of the wafer is detected through the laser interferometer, the flatness of the whole wafer is usually directly detected when the flatness of the wafer is detected through the laser distance measuring instrument, and the detection accuracy of the wafer is not high.
Disclosure of Invention
In order to solve the technical problems, the technical scheme provides a comprehensive detection method, a system and a storage medium for the surface flatness of a wafer, and solves the problems that when the surface of the wafer is detected by using a probe type surface measuring instrument in the background technology, the flatness of the surface is estimated by measuring the contact force or displacement between a probe and the surface of the wafer, the surface of the wafer is easily damaged by the contact of the probe and the wafer, the quality of the wafer is reduced, the detection efficiency is low when the flatness of the wafer is detected by a laser interferometer, the flatness of the whole wafer is usually directly detected by the laser distance measuring instrument, and the detection accuracy of the wafer is not high.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a comprehensive detection method for the surface flatness of a wafer comprises the following steps:
acquiring wafer surface position information to be detected and exposure program information of a photoetching machine;
dividing the surface of the wafer to be detected according to the position information of the surface of the wafer to be detected and the exposure program information of the photoetching machine to form a plurality of detection units;
acquiring the distribution condition of a detection unit, setting detection points in the detection unit based on the laser ranging program information of the laser ranging unit, detecting the detection points through the laser ranging unit, and obtaining detection data of the detection unit, wherein the detection data of the detection unit comprises distance values of a plurality of detection points and the laser ranging unit;
analyzing and processing detection data of the detection units based on a root mean square deviation method to obtain flatness data corresponding to each detection unit;
acquiring the position information of the surface of the wafer, detecting the flatness of the whole wafer based on the laser interference unit to acquire wafer detection data, and processing the wafer detection data to acquire wafer flatness data;
acquiring historical processing data of a wafer, and acquiring a maximum deviation value of flatness of a detection unit, the maximum deviation value of flatness of the wafer and a set value of the detection unit based on actual processing use requirements;
comparing the flatness data of each detection unit with the maximum flatness deviation value of the detection units, judging whether the flatness of the detection units exceeds the maximum flatness deviation value of the detection units, if not, the detection units are qualified, if so, the detection units are unqualified, marking the detection units and recording the number of the detection units exceeding the maximum flatness deviation value of the detection units;
judging whether the number of unqualified detection units exceeds a set value of the detection units, if so, the wafer is unqualified, outputting and displaying a detection result, flattening the wafer according to the detection data, if not, comparing the wafer flatness data measured by the laser interference unit with the wafer flatness maximum deviation value, judging whether the flatness of the wafer exceeds the wafer flatness maximum deviation value, if not, the wafer is qualified, outputting and displaying the detection result and the marked unqualified detection units, if so, the wafer is unqualified, outputting and displaying the detection result, and flattening the wafer according to the detection data.
Preferably, the wafer surface to be detected is divided to form a plurality of detection units, the detection units are numbered from top to bottom according to the sequence from left to right and from right to left, and when the detection units detect, the laser ranging unit detects the detection units one by one from top to bottom according to the sequence from the leftmost end to the rightmost end of the detection units and from the rightmost end to the leftmost end of the detection units.
Preferably, the detecting unit internally sets a detecting point position including:
acquiring position information of a detection unit;
according to the position information of the detection unit, uniformly setting detection points in a row and column mode;
wherein, the detection unit at the edge part of the wafer is incomplete, when the detection point positions are set for the incomplete detection unit, the density of the detection point positions is increased, and the distance between different detection point positions is reduced.
Preferably, the detecting the detection point location by laser ranging to obtain detection data of the detection unit, processing the detection data of the detection unit, and obtaining the corresponding flatness data includes:
the laser transmitter transmits laser beams to the detection points, the time required by the laser beams to return to the receiver is recorded, and the distance value between the detection points and the laser ranging unit is calculated according to the laser beam round trip time:wherein d is the distance value between the detection point and the laser ranging unit, c is the speed of light, and t is the time required for the laser beam to be received from the transmitter to the receiver;
screening abnormal values in the distance values of the detection points and the laser ranging unit based on the Graibus criterion, and eliminating all abnormal values to obtain distance value standard data;
based on the distance value standard data, a distance value matrix of the detection point positions and the laser ranging unit is established:in (1) the->The distance value between the j-th detection point in the i-th row and the laser ranging unit is represented by m, which is the total number of rows of detection point positions in the detection unit, and n is the total number of columns of detection point positions in the detection unit;
based on the distance value matrix of the detection points and the laser ranging units, calculating the flatness of each detection unit:in (1) the->Calculating a value for the flatness of the corresponding detection unit, < >>For the distance value of each detection point position and the laser distance measuring unit, < >>The average value of the distance values between all the detection points in the detection unit and the laser ranging unit.
Preferably, the laser interference unit performs flatness detection on the whole wafer to obtain wafer detection data, and processes the wafer detection data, so as to obtain wafer flatness data, including:
scanning the wafer through a laser interference unit to obtain wafer detection data;
according to the wafer detection data, a space coordinate system is established, a plane equation of a wafer plane, namely z (x, y), is obtained, and the wafer flatness data are calculated by taking a least square plane as a reference plane:wherein z' is a least squares plane expression,/and>q is the number of laser interference detection data for the flatness of the wafer, +.>Is a least square plane expression coefficient; wherein (1)>Fitting a least square plane equation to the wafer detection data for calculation, and calculating +.>The coefficients are specifically: />Order theObtaining: />Solving the matrix to obtain +.>Is a value of (2).
Furthermore, a comprehensive detection system for the surface flatness of the wafer is provided, which is used for realizing the detection method, and comprises the following steps:
the main control module is used for analyzing and processing the detection data, obtaining the flatness data corresponding to each detection unit, obtaining the wafer flatness data measured by the laser interference unit, obtaining the maximum flatness deviation value of the detection units, the maximum flatness deviation value of the wafer and the set value of the detection units, judging whether the flatness of the detection units exceeds the maximum flatness deviation value of the detection units, judging whether the number of unqualified detection units exceeds the set value of the detection units, and judging whether the flatness data of the wafer measured by the laser interference unit exceeds the maximum flatness deviation value of the wafer;
the power module is electrically connected with the main control module and is used for supplying power to the main control module;
the detection module is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting detection points in the detection units and detecting the detection points to obtain detection data of the detection units, and the output end of the detection module is electrically connected with the input end of the main control module and used for transmitting the detection data of the detection units to the main control module;
the scanning module comprises a laser interference unit and is used for scanning the whole wafer to be detected to obtain wafer detection data;
the input end of the display module is electrically connected with the output end of the main control module and is used for receiving the detection result and outputting and displaying.
Optionally, the main control module includes:
the input end of the signal receiving unit is electrically connected with the output end of the control unit and the output end of the laser interference unit, and the output end of the signal receiving unit is electrically connected with the input end of the data processing unit and is used for receiving the detection data and transmitting the detection data to the data processing unit;
the data processing unit is used for analyzing and processing the detection data to obtain flatness data corresponding to each detection unit and overall flatness data of the wafer, analyzing historical processing data of the wafer to obtain a maximum flatness deviation value of the detection units, a maximum flatness deviation value of the wafer and a set value of the detection units, and transmitting the maximum flatness deviation value and the set value of the detection units to the judging unit;
and the judging unit is used for judging whether the flatness of the detecting unit exceeds the maximum flatness deviation value of the detecting unit, judging whether the number of unqualified detecting units exceeds the set value of the detecting unit and judging whether the flatness of the wafer exceeds the maximum flatness deviation value of the wafer, and outputting a detecting result.
Optionally, the detection module includes:
the control unit is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting different detection points in the detection units, controlling the laser ranging unit to move among the detection units, detecting the detection points in the detection units, and transmitting detection data of the detection units to the main control module;
the laser ranging unit is electrically connected with the control unit and is used for measuring the distance value between the detection points in the different detection units and the laser ranging unit;
the fixing unit is used for bearing the wafer to be detected and horizontally fixing the wafer;
and the cleaning unit is used for removing impurities and dust on the wafer to be detected.
Optionally, the laser ranging unit includes:
a laser emitter for emitting a laser beam for measuring a distance;
a receiver for receiving a reflected laser signal;
a control circuit for controlling the emission and reception of the laser light and processing the measurement data;
a lens for focusing a laser beam;
the laser range finding unit shell is used for protecting internal elements, and mechanical stability is improved.
Still further, a computer readable storage medium is provided, on which a computer readable program is stored, the computer readable program when called executing the wafer surface flatness comprehensive detection method as described above.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a comprehensive detection method, a system and a storage medium for the surface flatness of a wafer, which divide the wafer to be detected into a plurality of detection units based on actual use requirements, detect the flatness of the plurality of detection units, improve the utilization rate of the wafer, detect the flatness by a laser ranging mode, avoid the contact between a detection instrument and the wafer in the detection process, prevent the damage of the wafer and the detection instrument, reduce the cost, detect the flatness of the whole wafer by a laser interference mode while detecting the detection units, prevent the superposition of flatness deviation of the plurality of detection units, ensure that the deviation of the whole wafer is overlarge, and influence the subsequent processing process.
Drawings
Fig. 1 and fig. 2 are combined to form a flowchart of a method for comprehensively detecting the surface flatness of a wafer according to the present invention;
FIG. 3 is a flow chart of the detection data processing of the detection unit in the present invention;
fig. 4 is a block diagram of a system for comprehensively detecting the surface flatness of a wafer according to the present invention.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the invention. The preferred embodiments in the following description are by way of example only and other obvious variations will occur to those skilled in the art.
Referring to fig. 1-3, a method for comprehensively detecting the surface flatness of a wafer according to an embodiment of the present invention includes:
step S100: acquiring wafer surface position information to be detected and exposure program information of a photoetching machine
Step S200: dividing the surface of the wafer to be detected according to the position information of the surface of the wafer to be detected and the exposure program information of the photoetching machine to form a plurality of detection units;
step S300: acquiring the distribution condition of a detection unit, setting detection points in the detection unit based on the laser ranging program information of the laser ranging unit, detecting the detection points through the laser ranging unit, and obtaining detection data of the detection unit, wherein the detection data of the detection unit comprises distance values of a plurality of detection points and the laser ranging unit;
specifically, carry out the inside testing point position setting of detecting element according to the testing process of laser rangefinder unit, wherein, the inside testing point position that sets up of detecting element includes:
acquiring position information of a detection unit;
according to the position information of the detection unit, uniformly setting detection points in a row and column mode;
wherein, the detection unit at the edge part of the wafer is incomplete, when the detection point positions are set for the incomplete detection unit, the density of the detection point positions is increased, and the distance between different detection point positions is reduced;
numbering the detection units from left to right and then from right to left from top to bottom, and when the detection units detect, detecting the detection units one by one from top to bottom by the laser ranging unit from the leftmost end to the rightmost end according to the numbers of the detection units and then from the rightmost end to the leftmost end;
according to the scheme, the surface of the wafer to be detected is divided according to the processing requirement of the wafer in the actual processing process, a plurality of detection units are formed, a plurality of detection points are arranged in the detection units, the fine partition detection of the flatness of the wafer is realized, the detection units are numbered, and the marking of unqualified detection units is facilitated.
Step S400: analyzing and processing detection data of the detection units based on a root mean square deviation method to obtain flatness data corresponding to each detection unit;
specifically, the laser transmitter transmits laser beams to the detection points, the time required by the laser beams to return to the receiver is recorded, and the distance value between the detection points and the laser ranging unit is calculated according to the laser beam round trip time:wherein d is the distance value between the detection point and the laser ranging unit, c is the speed of light, and t is the time required for the laser beam to be received from the transmitter to the receiver;
screening abnormal values in the distance values of the detection points and the laser ranging unit based on the Grabbs criterion, and eliminating all abnormal values to obtain distance value standard data, wherein the expression of the Grabbs criterion is as follows:in (1) the->For the distance value between the ith row and jth column detection point and the laser ranging unit, +.>For the average value of the distance values of all detection points and the laser distance measuring unit, +.>For the standard deviation of the distance values of all detection points and the laser distance measuring unit, < >>The method comprises the steps of obtaining a Lagrange critical value from a Lagrange table;
if the expression of the Grabbs criterion is satisfied, then the description is thatIs an outlier.
Based on the distance value standard data, a distance value matrix of the detection point positions and the laser ranging unit is established:in (1) the->The distance value between the j-th detection point in the i-th row and the laser ranging unit is represented by m, which is the total number of rows of detection point positions in the detection unit, and n is the total number of columns of detection point positions in the detection unit;
calculating flatness according to the distance value matrix of the detection points and the laser ranging unit:in (1) the->Calculating a value for the flatness of the corresponding detection unit, < >>For the distance value of each detection point position and the laser distance measuring unit, < >>The average value of the distance values between all the detection points in the detection unit and the laser ranging unit.
In the scheme, abnormal values in the distance values of the detection points and the laser ranging units are screened out based on the Grabbs criterion, then the average value of the distance values of the detection points and the laser ranging units in the detection units is used as a reference value, the calculated flatness value of each detection unit is obtained based on a root mean square deviation method, and the flatness condition of the detection units is effectively reflected through the detection data of the detection points.
Step S500: acquiring the position information of the surface of the wafer, detecting the flatness of the whole wafer based on the laser interference unit to acquire wafer detection data, and processing the wafer detection data to acquire wafer flatness data;
specifically, the flatness detection is performed on the whole wafer based on the laser interference unit, wafer detection data is obtained, the wafer detection data is processed, and the wafer flatness data is obtained, wherein the wafer flatness data comprises:
scanning the wafer through a laser interference unit to obtain wafer detection data;
according to the wafer detection data, a space coordinate system is established, a wafer plane equation, namely z (x, y), is obtained, and the wafer flatness data are calculated by taking a least square plane as a reference plane:wherein z' is a least squares plane expression,/and>q is the number of laser interference detection data for the flatness of the wafer, +.>Is a least square plane expression coefficient;
wherein,fitting a least square plane equation to the wafer detection data for calculation, and calculating +.>The coefficients are specifically: />Let->Obtaining: />Solving the matrix to obtain +.>Is a value of (2).
In the scheme, the flatness of the whole wafer is detected through laser interference, the least square plane is used as a reference plane, the whole flatness data of the wafer is calculated, and the phenomenon that the flatness deviation of a plurality of detection units is overlarge in superposition is avoided, so that the flatness deviation of the whole wafer exceeds the actual processing requirement.
Step S600: acquiring historical processing data of a wafer, and acquiring a maximum deviation value of flatness of a detection unit, the maximum deviation value of flatness of the wafer and a set value of the detection unit based on actual processing use requirements;
specifically, the maximum deviation value of the flatness of the detection unit and the maximum deviation value of the flatness of the wafer refer to the maximum error of the flatness of the allowed detection unit and the overall flatness of the wafer in the wafer processing process, and the set value of the detection unit refers to the maximum unqualified detection unit number allowed in the wafer processing process.
Step S700: comparing the flatness data of each detection unit with the maximum flatness deviation value of the detection unit, and judging whether the flatness of the detection unit exceeds the maximum flatness deviation value of the detection unit;
specifically, if the flatness of the detection unit does not exceed the maximum flatness deviation value of the detection unit, the detection unit is qualified, if the flatness of the detection unit exceeds the maximum flatness deviation value, the detection unit is not qualified, the detection unit is marked, and the number of the detection units exceeding the maximum flatness deviation value of the detection unit is recorded;
step S800: judging whether the number of unqualified detection units exceeds a detection unit set value;
specifically, if the number of unqualified detection units exceeds the set value of the detection unit, the wafer is unqualified, a detection result is output and displayed, and flattening processing is performed according to the flatness data, and if the number of unqualified detection units does not exceed the set value of the detection unit, the flatness data of the wafer measured by the laser interference unit is compared with the maximum deviation value of the flatness of the wafer;
step S900: judging whether the flatness of the wafer exceeds the maximum deviation value of the flatness of the wafer, if the flatness of the wafer does not exceed the maximum deviation value, outputting a failure detection unit for displaying a detection result and a mark, if the flatness of the wafer exceeds the maximum deviation value, outputting the failure detection unit for displaying the detection result and the mark, outputting the display detection result, and flattening the wafer according to the detection data.
According to the scheme, the flatness of the plurality of detection units is compared with the maximum deviation value of the flatness of the detection units, the number of detection units exceeding the maximum deviation value of the flatness of the detection units is recorded, the number of unqualified detection units is compared with the set value of the detection units, the detection precision is improved, meanwhile, the overall flatness of the wafer is detected, the phenomenon that the deviation of the overall flatness of the wafer is overlarge due to superposition of the deviations of the flatness of the plurality of detection units is avoided, the subsequent processing of the wafer is influenced, the unqualified detection units in the wafer which is qualified in detection are marked, the subsequent processing is facilitated, the processing efficiency and the utilization rate of the wafer are improved, and the processing cost of the wafer is saved.
Referring to fig. 4, further, in combination with the above-mentioned method for comprehensively detecting the surface flatness of a wafer, a system for comprehensively detecting the surface flatness of a wafer is provided, including:
the main control module is used for analyzing and processing the detection data, obtaining the flatness data corresponding to each detection unit, obtaining the wafer flatness data measured by the laser interference unit, obtaining the maximum flatness deviation value of the detection units, the maximum flatness deviation value of the wafer and the set value of the detection units, judging whether the flatness of the detection units exceeds the maximum flatness deviation value, judging whether the number of unqualified detection units exceeds the set value of the detection units, and judging whether the wafer flatness data measured by the laser interference unit exceeds the maximum flatness deviation value of the wafer;
the power module is electrically connected with the main control module and is used for supplying power to the main control module;
the detection module is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting detection points in the detection units and detecting the detection points to obtain detection data of the detection units, and the output end of the detection module is electrically connected with the input end of the main control module and is used for transmitting the detection data of the detection units to the main control module;
the scanning module comprises a laser interference unit and is used for scanning the whole wafer to be detected to obtain wafer detection data;
the input end of the display module is electrically connected with the output end of the main control module and is used for receiving the detection result and outputting and displaying.
The main control module includes:
the input end of the signal receiving unit is electrically connected with the output end of the control unit and the output end of the laser interference unit, and the output end of the signal receiving unit is electrically connected with the input end of the data processing unit and is used for receiving the detection data and transmitting the detection data to the data processing unit;
the data processing unit is used for analyzing and processing the detection data to obtain flatness data corresponding to each detection unit and overall flatness data of the wafer, analyzing historical processing data of the wafer to obtain a maximum flatness deviation value of the detection units, a maximum flatness deviation value of the wafer and a set value of the detection units, and transmitting the maximum flatness deviation value and the set value of the detection units to the judging unit;
and the judging unit is used for judging whether the flatness of the detecting unit exceeds the maximum flatness deviation value of the detecting unit, judging whether the number of unqualified detecting units exceeds the set value of the detecting unit and judging whether the flatness of the wafer exceeds the maximum flatness deviation value of the wafer, and outputting a detecting result.
The detection module comprises:
the control unit is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting different detection points in the detection units, controlling the laser ranging unit to move among the detection units, detecting the detection points in the detection units, and transmitting detection data of the detection units to the main control module;
the laser ranging unit is electrically connected with the control unit and is used for measuring the distance value between the detection points in the different detection units and the laser ranging unit;
the fixing unit is used for bearing the wafer to be detected and horizontally fixing the wafer;
the cleaning unit is used for removing impurities and dust on the wafer to be detected.
The laser ranging unit includes:
the laser transmitter is used for transmitting a laser beam, and the laser beam is used for measuring the distance;
a receiver for receiving the reflected laser signal;
the control circuit is used for controlling the emission and the receiving of the laser and processing the measurement data;
a lens for focusing the laser beam;
the laser range finding unit shell is used for protecting internal elements, and mechanical stability is improved.
The laser ranging unit is positioned above the fixing unit, the laser beam emitted by the laser emitter is vertical to the wafer which is horizontally fixed, and the control unit controls the laser ranging unit to horizontally move to be right above the detection point to detect.
The operation flow of the wafer surface flatness comprehensive detection system is as follows:
step one: the detection module divides the wafer to be detected according to the position information of the surface of the wafer to be detected and the exposure program information of the photoetching machine to form a plurality of detection units, numbers the detection units and sets a plurality of detection points in the detection units;
step two: the detection module detects detection points in the detection units according to the serial numbers of the detection units to obtain detection data of the detection units, and transmits the detection data of the detection units to the main control module;
step three: the scanning module performs scanning detection on the whole wafer to obtain wafer detection data, and transmits the wafer detection data to the main control module;
step three: the main control module receives the detection data of the detection unit and the detection data of the wafer, and processes the detection data of the detection unit and the detection data of the wafer to obtain the flatness corresponding to the detection unit and the flatness of the wafer;
step four: judging whether the flatness of each detection unit exceeds a standard value, if so, failing the detection unit, if not, failing the detection unit, and recording the number of the failed detection units;
step five: judging whether the number of unqualified detection units exceeds a set value, if the number of unqualified detection units exceeds the set value, outputting and displaying that the wafer is unqualified, if the number of unqualified detection units does not exceed the set value, judging whether the flatness of the wafer exceeds the maximum deviation value of the flatness of the wafer, if the number of unqualified detection units exceeds the maximum deviation value of the flatness of the wafer, outputting and displaying a detection result, flattening the wafer according to flatness data, if the number of unqualified detection units does not exceed the maximum deviation value, marking the unqualified detection units, reading the unqualified detection units, outputting and displaying through a display module, and facilitating subsequent processing.
The execution flow of the detection module is as follows:
the wafer to be detected is obtained and horizontally fixed on the fixing unit;
cleaning the wafer through a cleaning unit to remove impurities and dust on the wafer to be detected;
dividing the surface of a wafer to be detected to form a plurality of detection units, and setting different detection points in the detection units;
the control unit controls the laser ranging unit to detect different detection points, records detection data and transmits the detection data to the main control module.
The execution flow of the main control module is as follows:
the signal receiving unit receives the detection data and transmits the detection data to the data processing unit;
the data processing unit analyzes and processes the detection data and transmits the detection data to the judging unit;
the judging unit analyzes and judges the processed detection data and outputs the detection result to the display module.
Still further, the present solution also proposes a computer readable storage medium, on which a computer readable program is stored, the computer readable program executing the above-mentioned method for updating the power system overhaul information base when called;
it is understood that the computer readable storage medium may be a magnetic medium, e.g., floppy disk, hard disk, tape; optical media such as DVD; or a semiconductor medium such as a solid state disk SolidStateDisk, SSD, etc.
In summary, the invention has the advantages that: the wafer flatness detection method has the advantages that the wafer flatness condition is more refined, the plurality of detection units are divided into the wafer, flatness detection is carried out on each detection unit, detection accuracy is improved, flatness is detected in a laser ranging mode, direct contact does not exist between a detection instrument and the wafer, damage to the detection instrument and the wafer is avoided, flatness detection is carried out on the whole wafer, the phenomenon that the whole flatness deviation of the wafer is overlarge due to superposition of the flatness of the plurality of detection units is avoided, subsequent processing is affected, unqualified detection units in the qualified wafer are marked, subsequent processing is facilitated, the unqualified wafer is subjected to flattening treatment directly through recorded detection data, processing efficiency and the utilization rate of the wafer are improved, and the processing cost of the wafer is saved.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made therein without departing from the spirit and scope of the invention, which is defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. The comprehensive detection method for the surface flatness of the wafer is characterized by comprising the following steps of:
acquiring wafer surface position information to be detected and exposure program information of a photoetching machine;
dividing the surface of the wafer to be detected according to the position information of the surface of the wafer to be detected and the exposure program information of the photoetching machine to form a plurality of detection units;
acquiring the distribution condition of a detection unit, setting detection points in the detection unit based on the laser ranging program information of the laser ranging unit, detecting the detection points through the laser ranging unit, and obtaining detection data of the detection unit, wherein the detection data of the detection unit comprises distance values of a plurality of detection points and the laser ranging unit;
analyzing and processing detection data of the detection units based on a root mean square deviation method to obtain flatness data corresponding to each detection unit;
acquiring the position information of the surface of the wafer, detecting the flatness of the whole wafer based on the laser interference unit to acquire wafer detection data, and processing the wafer detection data to acquire wafer flatness data;
acquiring historical processing data of a wafer, and acquiring a maximum deviation value of flatness of a detection unit, the maximum deviation value of flatness of the wafer and a set value of the detection unit based on actual processing use requirements;
comparing the flatness data of each detection unit with the maximum flatness deviation value of the detection units, judging whether the flatness of the detection units exceeds the maximum flatness deviation value of the detection units, if not, the detection units are qualified, if so, the detection units are unqualified, marking the detection units and recording the number of the detection units exceeding the maximum flatness deviation value of the detection units;
judging whether the number of unqualified detection units exceeds a set value of the detection units, if so, the wafer is unqualified, outputting and displaying a detection result, flattening the wafer according to the detection data, if not, comparing the wafer flatness data measured by the laser interference unit with the wafer flatness maximum deviation value, judging whether the flatness of the wafer exceeds the wafer flatness maximum deviation value, if not, the wafer is qualified, outputting and displaying the detection result and the marked unqualified detection units, if so, the wafer is unqualified, outputting and displaying the detection result, and flattening the wafer according to the detection data.
2. The method for comprehensively detecting the surface flatness of the wafer according to claim 1, wherein the wafer surface to be detected is divided to form a plurality of detection units, the detection units are numbered from left to right and from right to left, and when the detection units detect, the laser ranging units detect the detection units one by one from top to bottom according to the number of the detection units from the leftmost end to the rightmost end and from the rightmost end to the leftmost end.
3. The method for comprehensively detecting the surface flatness of a wafer according to claim 1, wherein the step of internally arranging the detection points in the detection unit includes:
acquiring position information of a detection unit;
according to the position information of the detection unit, uniformly setting detection points in a row and column mode;
wherein, the detection unit at the edge part of the wafer is incomplete, when the detection point positions are set for the incomplete detection unit, the density of the detection point positions is increased, and the distance between different detection point positions is reduced.
4. The method for comprehensively detecting the surface flatness of a wafer according to claim 1, wherein the step of performing laser ranging detection on the detection points to obtain detection data of the detection unit, and processing the detection data of the detection unit to obtain the corresponding flatness data includes:
the laser transmitter transmits laser beams to the detection points, the time required by the laser beams to return to the receiver is recorded, and the distance value between the detection points and the laser ranging unit is calculated according to the laser beam round trip time:wherein d is the distance value between the detection point and the laser ranging unit, c is the speed of light, and t is the time required for the laser beam to be received from the transmitter to the receiver;
screening abnormal values in the distance values of the detection points and the laser ranging unit based on the Graibus criterion, and eliminating all abnormal values to obtain distance value standard data;
based on the distance value standard data, a distance value matrix of the detection point positions and the laser ranging unit is established:in (1) the->The distance value between the detection point of the ith row and the jth column and the laser ranging unit is m, the total number of rows of detection point positions in the detection unit is m, and the total number of columns of detection point positions in the detection unit is n;
based on the distance value matrix of the detection points and the laser ranging units, calculating the flatness of each detection unit:in (1) the->Calculating a value for the flatness of the corresponding detection unit, < >>For the distance value of each detection point position and the laser distance measuring unit, < >>The average value of the distance values between all the detection points in the detection unit and the laser ranging unit.
5. The method for comprehensively detecting the surface flatness of a wafer according to claim 1, wherein the step of detecting the flatness of the entire wafer based on the laser interference unit to obtain wafer detection data, and the step of processing the wafer detection data to obtain wafer flatness data includes:
scanning the wafer through a laser interference unit to obtain wafer detection data;
according to the wafer detection data, a space coordinate system is established, a plane equation of a wafer plane, namely z (x, y), is obtained, and the wafer flatness data are calculated by taking a least square plane as a reference plane:wherein z' is a least squares plane expression,/and>q is the number of laser interference detection data for the flatness of the wafer, +.>Is a least square plane expression coefficient; wherein (1)>Fitting a least square plane equation to the wafer detection data for calculation, and calculating +.>The coefficients are specifically: />Order theObtaining: />Solving the matrix to obtain +.>Is a value of (2).
6. A wafer surface flatness comprehensive inspection system for implementing the inspection method according to any one of claims 1 to 5, comprising:
the main control module is used for analyzing and processing the detection data, obtaining the flatness data corresponding to each detection unit, obtaining the wafer flatness data measured by the laser interference unit, obtaining the maximum flatness deviation value of the detection units, the maximum flatness deviation value of the wafer and the set value of the detection units, judging whether the flatness of the detection units exceeds the maximum flatness deviation value of the detection units, judging whether the number of unqualified detection units exceeds the set value of the detection units, and judging whether the wafer flatness data measured by the laser interference unit exceeds the maximum flatness deviation value of the wafer;
the power module is electrically connected with the main control module and is used for supplying power to the main control module;
the detection module is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting detection points in the detection units and detecting the detection points to obtain detection data of the detection units, and the output end of the detection module is electrically connected with the input end of the main control module and used for transmitting the detection data of the detection units to the main control module;
the scanning module comprises a laser interference unit and is used for scanning the whole wafer to be detected to obtain wafer detection data;
the input end of the display module is electrically connected with the output end of the main control module and is used for receiving the detection result and outputting and displaying.
7. The integrated wafer surface flatness inspection system of claim 6, wherein the main control module comprises:
the input end of the signal receiving unit is electrically connected with the output end of the control unit and the output end of the laser interference unit, and the output end of the signal receiving unit is electrically connected with the input end of the data processing unit and is used for receiving the detection data and transmitting the detection data to the data processing unit;
the data processing unit is used for analyzing and processing the detection data to obtain flatness data corresponding to each detection unit and overall flatness data of the wafer, analyzing historical processing data of the wafer to obtain a maximum flatness deviation value of the detection units, a maximum flatness deviation value of the wafer and a set value of the detection units, and transmitting the maximum flatness deviation value and the set value of the detection units to the judging unit;
and the judging unit is used for judging whether the flatness of the detecting unit exceeds the maximum flatness deviation value of the detecting unit, judging whether the number of unqualified detecting units exceeds the set value of the detecting unit and judging whether the flatness of the wafer exceeds the maximum flatness deviation value of the wafer, and outputting a detecting result.
8. The integrated wafer surface flatness inspection system of claim 6, wherein the inspection module comprises:
the control unit is used for dividing the surface of the wafer to be detected to form a plurality of detection units, numbering the detection units, setting different detection points in the detection units, controlling the laser ranging unit to move among the detection units, detecting the detection points in the detection units, and transmitting detection data of the detection units to the main control module;
the laser ranging unit is electrically connected with the control unit and is used for measuring the distance value between the detection points in the different detection units and the laser ranging unit;
the fixing unit is used for bearing the wafer to be detected and horizontally fixing the wafer;
and the cleaning unit is used for removing impurities and dust on the wafer to be detected.
9. The integrated wafer surface flatness inspection system of claim 6, wherein the laser ranging unit comprises:
a laser emitter for emitting a laser beam for measuring a distance;
a receiver for receiving a reflected laser signal;
a control circuit for controlling the emission and reception of the laser light and processing the measurement data;
a lens for focusing a laser beam;
the laser range finding unit shell is used for protecting internal elements, and mechanical stability is improved.
10. A computer-readable storage medium having a computer-readable program stored thereon, wherein the computer-readable program when invoked performs the integrated wafer surface flatness detection method according to any one of claims 1-5.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000234920A (en) * | 1999-02-15 | 2000-08-29 | Hitachi Electronics Eng Co Ltd | Wafer flatness measuring equipment |
| JP2001338870A (en) * | 2000-03-24 | 2001-12-07 | Nikon Corp | Scanning aligner and method, controlling device and method, and device-manufacturing method |
| JP2004117016A (en) * | 2002-09-24 | 2004-04-15 | Nec Kansai Ltd | Semiconductor wafer defect inspecting apparatus |
| CN102854196A (en) * | 2012-09-24 | 2013-01-02 | 江苏物联网研究发展中心 | Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects |
| CN110514152A (en) * | 2018-05-21 | 2019-11-29 | 北京博清科技有限公司 | Degree of plainness for wall surface detection method and system based on laser scanning |
| CN113324497A (en) * | 2020-02-28 | 2021-08-31 | 中芯国际集成电路制造（天津）有限公司 | Flatness detection method and device, leveling system and storage medium |
| CN115201106A (en) * | 2021-04-01 | 2022-10-18 | 环球晶圆股份有限公司 | Wafer detection method and device |
| CN115561973A (en) * | 2022-10-12 | 2023-01-03 | 华虹半导体(无锡)有限公司 | Method for monitoring flatness of exposure platform of photoetching machine |
-
2023
- 2023-09-25 CN CN202311235586.5A patent/CN116989704B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000234920A (en) * | 1999-02-15 | 2000-08-29 | Hitachi Electronics Eng Co Ltd | Wafer flatness measuring equipment |
| JP2001338870A (en) * | 2000-03-24 | 2001-12-07 | Nikon Corp | Scanning aligner and method, controlling device and method, and device-manufacturing method |
| JP2004117016A (en) * | 2002-09-24 | 2004-04-15 | Nec Kansai Ltd | Semiconductor wafer defect inspecting apparatus |
| CN102854196A (en) * | 2012-09-24 | 2013-01-02 | 江苏物联网研究发展中心 | Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects |
| CN110514152A (en) * | 2018-05-21 | 2019-11-29 | 北京博清科技有限公司 | Degree of plainness for wall surface detection method and system based on laser scanning |
| CN113324497A (en) * | 2020-02-28 | 2021-08-31 | 中芯国际集成电路制造（天津）有限公司 | Flatness detection method and device, leveling system and storage medium |
| CN115201106A (en) * | 2021-04-01 | 2022-10-18 | 环球晶圆股份有限公司 | Wafer detection method and device |
| CN115561973A (en) * | 2022-10-12 | 2023-01-03 | 华虹半导体(无锡)有限公司 | Method for monitoring flatness of exposure platform of photoetching machine |
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