CN102902167B - Method for detecting accuracy of mask plate hood of photoetching machine - Google Patents

Method for detecting accuracy of mask plate hood of photoetching machine Download PDF

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Publication number
CN102902167B
CN102902167B CN201210451856.1A CN201210451856A CN102902167B CN 102902167 B CN102902167 B CN 102902167B CN 201210451856 A CN201210451856 A CN 201210451856A CN 102902167 B CN102902167 B CN 102902167B
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mask plate
actual
actual graphical
size
exposure
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CN102902167A (en
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朱骏
张旭昇
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Abstract

The invention belongs to the semiconductor manufacturing technical field and in particular relates to a method for detecting the accuracy of the mask plate hood of a photoetching machine. The method comprises the following steps of: S1, preparing a test mask plate, wherein an actual pattern region is formed on the test mask plate and the actual pattern region comprises an actual pattern which comprises a main pattern; S2, performing exposure on a silicon wafer by means of the test mask plate, wherein the hood shields redundant light in the exposure process and only exposes the actual pattern region needing to be exposed; and S3, measuring the actual size of the exposed pattern on the silicon wafer, and calculating the offset between the actual size and the predetermined size, thereby determining the accuracy of the mask plate hood. The method is characterized in that once the test mask plate is fabricated, the test mask plate is suitable for testing various different types of photoetching machines, and no measurement pattern needs to be fabricated on the silicon chip in advance; therefore, the proposal is more flexible and convenient and capable of improving the detection accuracy of the hood.

Description

A kind of method that detects the mask plate shadow shield precision of litho machine
Technical field
The invention belongs to technical field of manufacturing semiconductors, especially a kind of method that detects the mask plate shadow shield precision of litho machine, its effect is the detectability improving the mask plate shadow shield precision of litho machine.
Background technology
Photoetching technique is followed the continuous progress of integrated circuit fabrication process, constantly dwindling of live width, it is more and more less that the area of semiconductor devices is just becoming, and semi-conductive layout, from common simple function discrete device, develops into the integrated circuit of integrating high-density multifunction; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (VLSI (very large scale integrated circuit)), until the ULSI of today (ULSI), the area of device further dwindles, and function is more comprehensively powerful.Consider the restriction of the complicacy, chronicity of technique research and development and high cost etc. unfavorable factor, how on the basis of prior art level, further to improve the integration density of device, dwindle the area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thereby raising overall interests, will more and more be subject to the attention of chip designer, manufacturer.Wherein photoetching process is just being undertaken crucial effect, and for photoetching technique, lithographic equipment, technique and mask plate technology are the most important things wherein.
In order to obtain higher production capacity, the exposure area of litho machine also constantly increases, and has reached at present 26 millimeters * 33 millimeters (X*Y).Referring to the structure of the work stage of mask aligner mask plate shown in Fig. 1,2, by mask plate shadow shield (5), in exposure process, unnecessary light is blocked, and then can define the feature size scope of exposure.
In order to ensure litho machine, can realize accurately the predefined figure on mask plate, just need mask plate shadow shield to locate accurately.The conventional mask plate shadow shield detection architecture of industry as shown in Figure 3, detection architecture is comprised of the different figure of size dimension (A, B, C, D, A ', B ', C ', D ') respectively, all there is scale size on each of each figure limit, amplify and see Fig. 3 ', in figure, directions X is horizontal direction, Y-direction is longitudinal direction (below also like this), and dimensional units is micron.
Adopt the workflow of this structure to be: first, on silicon chip, by photoetching, etching technics, to produce the graphic structure that there is rule on different size size and every limit; Secondly, then on silicon chip gluing, according to former preposition, in corresponding region, with mask plate shadow shield, define identical dimension of picture and expose respectively; By microscope, carry out reading (Fig. 4 right side, dark part is photoresist actual graphical limit) and then obtain the precision performance of litho machine shadow shield.
In general, this method is adjusted mask plate shadow shield size, makes the mask plate figure of realizing different sizes on silicon chip; Subsequently, again expose and confirm shadow shield mobile accuracy with microscope.It can more directly determine mask plate shadow shield positioning precision, but due to naked eyes limitation, cannot Accurate Expression mask plate shadow shield accuracy, and because exposure silicon chip need to be made in advance preparation and define concrete size, therefore also cannot adjust flexibly according to client's actual needs the size of measurement pattern, to determine whether precision can reach requirement to different product dimension of picture size.
Therefore, in other words, the method is incomplete.
Summary of the invention
Technical matters to be solved by this invention is to propose a kind of method that detects litho machine shadow shield precision, and its effect is the detectability improving the mask plate shadow shield precision of litho machine.
The technical solution adopted in the present invention is: a kind of method that detects the mask plate shadow shield precision of litho machine, comprise the following steps: S1, setup test mask plate, on described test mask plate, there is actual graphical region, described actual graphical region comprises actual graphical, and described actual graphical comprises main graphic; S2, utilizes described test mask plate to expose on silicon chip, and shadow shield blocks unnecessary light in exposure process, only exposes the actual graphical region that needs exposure; S3, records the size of exposure figure on actual silicon chip, calculates the deviation of itself and preliminary dimension size, can determine the precision of mask plate shadow shield.
Once test mask plate of the present invention is made, can be for testing various dissimilar photoetching equipments, and on silicon chip without making and measure figure in advance, so this programme is convenient more flexibly, can improve the accuracy of detection of shadow shield.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately by physical size equal proportion convergent-divergent, do not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the mask plate work stage of exposure photo-etching machine in prior art and the upward view of mask plate;
Fig. 2 is the cut-open view of Fig. 1;
Fig. 3 is the mask plate shadow shield accuracy detection structure of industrywide standard;
Fig. 3 ' is the upper left corner partial enlarged drawing of a-quadrant in Fig. 3;
Fig. 4 is detection architecture enlarged drawing and test schematic diagram;
Fig. 5 is this patent test mask plate layout;
Fig. 6 is the enlarged diagram of actual graphical region (4);
Fig. 7 is the enlarged diagram of actual graphical regional graphics (6).
Wherein: 1, projection lens; 2, mask plate stationary platform; 3, mask plate; 4, mask plate actual graphical region; 5, mask plate shadow shield; 6, the actual graphical in mask plate actual graphical region (4); 7, coordinates regional; 8, the main graphic of actual graphical (6).
Embodiment
The present invention proposes a kind of method that detects the mask plate shadow shield precision of litho machine, its cardinal principle is to utilize test mask plate to expose on silicon chip, then by recording the size of exposure figure on actual silicon chip, the size of exposure figure on actual silicon chip and preliminary dimension size are subtracted each other, the precision of mask plate shadow shield can be determined, and then litho machine mask plate shadow shield precision performance (micron level) can be tested accurately.When the setting accuracy of mask plate shadow shield is poorer, on actual silicon chip, the deviation of the size of exposure figure and preliminary dimension size will be more.
Referring to Fig. 5, Fig. 6, Fig. 7, on the test mask plate shown in Fig. 5, form actual graphical region 4, in the present embodiment, there are four identical actual graphical regions 4 that 2*2 orthogonal array distributes.Fig. 6 has illustrated shape and the layout of each interior comprised actual graphical 6 in actual graphical region 4, in the present embodiment, actual graphical 6 is rectangle, is oblique angle array distribution, side-play amount between each actual graphical 6, the skew of X, Y-direction is 0.01 micron~10000 microns.Referring to Fig. 7, each actual graphical 6 comprises again a main graphic 8, and this main graphic 8 is also rectangle.Described main graphic 8 has coordinates regional 7 (a, b), for example take mask plate center as coordinate axis center origin, the definition lower left corner of main graphic 8 and two coordinate position (a1 in the upper right corner, b1) and (a2, b2), the lateral dimension x of main graphic 8 is a2-a1, longitudinal size y is b2-b1,0.01 micron~10000 microns of its x, y range of size.By exposure, the figure that main graphic 8 forms on silicon chip is called resolution chart or exposure figure, by the difference of itself and x, y, learns the precision of shadow shield.
Particularly, the method for detection shadow shield precision comprises the following steps:
S1, setup test mask plate, has actual graphical region 4 on described test mask plate, and actual graphical region 4 comprises a plurality of actual graphical 6, and each actual graphical 6 includes main graphic 8.According to the exposure area of existing litho machine, the size in described actual graphical region 4 is generally no more than 26 millimeters * 33 millimeters (X*Y).Described test mask plate can be phase shift mask plate (PSM) or binary mask plate (Binary).
S2, utilizes described test mask plate to expose on silicon chip, and shadow shield blocks unnecessary light in exposure process, only exposes the actual graphical region 4 that needs exposure.For example, single exposure only exposes to an actual graphical region 4 in Fig. 5.
S3, records the size of exposure figure on actual silicon chip, calculates the deviation of itself and preliminary dimension size, for example, by it and preliminary dimension size is subtracted each other, is divided by or by other operational method, can determine the precision of mask plate shadow shield.The size of described exposure figure can adopt electronics Wire width measuring equipment to detect, and by reading the coordinate of the exposure figure of main graphic 8, and then obtains the size of exposure figure.Described preliminary dimension determines by the multinomial setup parameter of the size of main graphic 8 and litho machine, mask plate, should specifically calculate according to instantiation (actual conditions such as 1 times, 5 times or 10 times of masks).
Once described test mask plate is made, can be for testing various dissimilar photoetching equipments, and on silicon chip without making and measure figure in advance, so this programme is convenient more flexibly.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.

Claims (8)

1. a method that detects the mask plate shadow shield precision of litho machine, is characterized in that comprising the following steps:
S1, setup test mask plate, has actual graphical region on described test mask plate, described actual figure
Shape region comprises actual graphical, and described actual graphical comprises main graphic;
S2, utilizes described test mask plate to expose on silicon chip, shadow shield in exposure process by unnecessary
Light block, only expose to need the actual graphical region of exposure;
S3, records the size of exposure figure on actual silicon chip, calculates itself and preliminary dimension size
Deviation, can determine the precision of mask plate shadow shield; Wherein
On described test mask plate, there is a plurality of actual graphical region, in each actual graphical region, comprise a plurality of
Actual graphical, each actual graphical includes main graphic, and described actual graphical is oblique angle array distribution.
2. the method for claim 1, is characterized in that, described actual graphical region is 2*2 orthogonal array and distributes.
3. the method for claim 1, is characterized in that, the horizontal or vertical misalignment amount between each actual graphical is 0.01 micron~10000 microns.
4. the method for claim 1, is characterized in that, described main graphic is rectangle, and it laterally and 0.01 micron~10000 microns of longitudinal size scopes.
5. the method for claim 1, is characterized in that, the size in described actual graphical region is no more than 26 millimeters * 33 millimeters.
6. the method for claim 1, is characterized in that, described main graphic has coordinates regional, and this coordinates regional be take mask plate center as coordinate axis center origin.
7. the method for claim 1, is characterized in that, described test mask plate is phase shift mask plate or binary mask plate.
8. the method for claim 1, is characterized in that, the size of described exposure figure adopts electronics Wire width measuring equipment to detect.
CN201210451856.1A 2012-11-12 2012-11-12 Method for detecting accuracy of mask plate hood of photoetching machine Active CN102902167B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104199251A (en) * 2014-09-26 2014-12-10 南京中电熊猫液晶显示科技有限公司 Mask plate device and LCD (Liquid Crystal Display) adopting same
CN107748479A (en) * 2017-11-03 2018-03-02 武汉华星光电半导体显示技术有限公司 It is a kind of to judge that baffle plate walks the mask plate and its method of precision
CN111983889A (en) * 2020-08-12 2020-11-24 深圳市华星光电半导体显示技术有限公司 Mask plate device, display and exposure machine

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005332844A (en) * 2004-05-18 2005-12-02 Sony Corp Membrane mask, pattern processing method using the same, and method of manufacturing membrane mask
JP2007012949A (en) * 2005-07-01 2007-01-18 Matsushita Electric Ind Co Ltd Flare measuring apparatus and flare measuring method
CN102445859A (en) * 2011-11-28 2012-05-09 上海华力微电子有限公司 Method for testing shading baffle of photo-etching machine

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005332844A (en) * 2004-05-18 2005-12-02 Sony Corp Membrane mask, pattern processing method using the same, and method of manufacturing membrane mask
JP2007012949A (en) * 2005-07-01 2007-01-18 Matsushita Electric Ind Co Ltd Flare measuring apparatus and flare measuring method
CN102445859A (en) * 2011-11-28 2012-05-09 上海华力微电子有限公司 Method for testing shading baffle of photo-etching machine

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