CN102749815B - The detection method of alignment precision - Google Patents
The detection method of alignment precision Download PDFInfo
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- CN102749815B CN102749815B CN201210261864.XA CN201210261864A CN102749815B CN 102749815 B CN102749815 B CN 102749815B CN 201210261864 A CN201210261864 A CN 201210261864A CN 102749815 B CN102749815 B CN 102749815B
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Abstract
A detection method for alignment precision, wherein, comprising: the first reference coordinate value and the second reference coordinate value that obtain predetermined pattern; Obtain the actual coordinate value corresponding to predetermined pattern and preset coordinates value respectively; Calculate the actual difference of described actual coordinate value and described first reference coordinate value respectively, and the predetermined difference value between described preset coordinates value and described second reference coordinate value; Described actual difference and predetermined difference value are compared, realizes the detection to alignment precision.The present invention is by calculating actual difference and the predetermined difference value of predetermined pattern, and both are compared, to realize the detection to alignment precision, thus avoid and each concrete overlay mark manually searched by microscope and marks, save a large amount of manpowers and time, decrease the reduction of the error brought in process overlay mark being marked and sets and the product yield caused.
Description
Technical field
The present invention relates to semiconductor lithography process, and in particular to the detection method of alignment precision.
Background technology
In semiconductor processing, photoetching is a vital step, by the series of steps such as aligning, exposure of photoetching, can realize the technological process transferred to by mask graph on wafer.Usually, in the process forming semi-conductor chip, need to carry out multilayer photoetching process and just can complete whole manufacture process.This becomes particularly important with regard to making the position alignment of current photolithographic figure and front layer litho pattern.Alignment precision just refers to the position alignment error of the layer of wafer and the litho pattern of layer.
At present, there are the multiple measurement about alignment precision and control method, such as application number is 200510111412, name is called that the Chinese patent application of " scale and the method for measuring photoetching alignment precision " mentions a kind of traditional measurement pattern, namely box mark (boxmark) is overlapped, this cover box mark passes through to have identical central by inside casing and housing two and the square on the limit be parallel to each other is formed, obtain alignment side-play amount by the coordinate difference comparing left and right side frame, and judge whether the aligning between two layer photoetchings meets the requirements; Again such as, the patent No. is ZN200810043750, name is called that the Chinese patent of " method improving photoetching alignment precision " discloses the method for a kind of employing spin coating packed layer on silicon chip, to realize when carrying out multilayer photoetching, improve the method for alignment precision between layers.
But in the measurement of multiple alignment precision in the prior art and control method, the raw data to alignment precision (recipe) is inevitably needed to set, so that as the reference value of comparing, this needs slip-stick artist often to complete a layer photoetching, all will under the optical microscope of measuring machine, manual capture is carried out to each overlay mark (mark) and comparison mark so that measure and assessment alignment whether accurate.This assignment procedure is at substantial man power and material not only, and also often the easy omission due to slip-stick artist causes error to subsequent technique, affects product yield.
Summary of the invention
The invention provides a kind of detection method of alignment precision, improve detection efficiency and the accuracy of alignment precision, decrease the reduction due to the product yield manually searched overlay mark and mark and cause.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of detection method of alignment precision, wherein, comprising: the first reference coordinate value and the second reference coordinate value that obtain predetermined pattern; Obtain the actual coordinate value corresponding to predetermined pattern and preset coordinates value respectively; Calculate the actual difference of described actual coordinate value and described first reference coordinate value respectively, and the predetermined difference value between described preset coordinates value and described second reference coordinate value; Described actual difference and predetermined difference value are compared, realizes the detection to alignment precision.
Optionally, described first reference coordinate value for the coordinate figure of predetermined pattern corresponding to specific lithography layer, described second reference coordinate value be the coordinate figure of predetermined pattern on the mask that this specific lithography layer is corresponding.
Optionally, described specific lithography layer is active area lithography layer.
Optionally, described actual coordinate value is for predetermined pattern is at the coordinate figure needing to detect corresponding to the layer of alignment precision, and described preset coordinates value is the coordinate figure of predetermined pattern on the mask corresponding with layer to be measured.
Optionally, described predetermined pattern is overlay mark.
Optionally, describedly actual difference and predetermined difference value compared the detection realized alignment precision comprise: when described actual difference and described predetermined difference value consistent time, then alignment precision is error free.
Compared to prior art, the detection method of alignment precision provided by the present invention, avoids the overlay mark concrete to each and marks, save a large amount of manpowers and time, decreases the error brought due to mark omission or mistake.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of a kind of embodiment of detection method of alignment precision of the present invention.
Embodiment
In the detection method of traditional alignment precision, often complete each layer photoetching, all manually must mark by means of the overlay mark that microscope is concrete to each, thus spend a large amount of manpower and time.
Inventor finds, when carrying out each layer photoetching, the actual coordinate value of current photolithographic figure can load in the current data of alignment precision automatically, by the difference of the preset coordinates value in the difference of actual coordinate and the first reference coordinate and mask and the second reference coordinate is contrasted, and and then judge that the position of overlay mark is whether accurate, thus the detection to alignment precision can be completed.
Below in conjunction with specific embodiments and the drawings, the detection method of alignment precision of the present invention is described in detail.
With reference to figure 1, in one embodiment, the detection method of alignment precision of the present invention comprises:
Step S1, obtains the first reference coordinate value and the second reference coordinate value of predetermined pattern;
Step S2, obtains the actual coordinate value corresponding to predetermined pattern and preset coordinates value respectively;
Step S3, calculates the actual difference of described actual coordinate value and described first reference coordinate value respectively, and the predetermined difference value between described preset coordinates value and described second reference coordinate value;
Step S4, compares described actual difference and predetermined difference value, realizes the detection to alignment precision.
Specifically, wherein, described first reference coordinate value can be the coordinate figure of predetermined pattern corresponding to specific lithography layer, and described second reference coordinate value can be the coordinate figure of predetermined pattern on the mask that this specific lithography layer is corresponding.In one embodiment, described specific lithography layer can be active area lithography layer, because active area is all generally first layer measuring alignment precision, hardly error occurs, therefore can using the coordinate data on active area lithography layer and mask as reference value, to obtain measurement result accurately.In other embodiments, other layer also can be adopted as described specific lithography layer.
Wherein, described actual coordinate value is for predetermined pattern is at the coordinate figure needing to detect corresponding to the layer of alignment precision.Described preset coordinates value is the coordinate figure of predetermined pattern on the mask corresponding with layer to be measured.
Wherein, described predetermined pattern can be overlay mark.
Because overlay mark is all unique, therefore, calculate the actual difference of overlay mark between the coordinate figure needing to detect on the lithography layer of alignment precision and the first reference coordinate value respectively, and the predetermined difference value between the coordinate figure of overlay mark on the mask of correspondence and the second reference coordinate value; If actual difference is consistent with predetermined difference value, then the alignment precision of layer to be measured is error free.
Although may deviation be there is in photoetching process, because the present invention sets reference coordinate value, by actual coordinate value or preset coordinates value are calculated with corresponding reference coordinate value respectively, and the actual difference of acquisition and predetermined difference value are compared, thus two values that different coordinates is united can be compared, and then determine that whether alignment is accurate.
In addition, because system can automatically at the coordinate figure of every layer photoetching layer, therefore obtain alignment target actual coordinate value very convenient, even realize Aulomatizeted Detect by computer program by record overlay mark.
In a kind of embodiment, the spacing between two-layer lithography layer is 70 microns, and namely its predetermined difference value is 70 microns.First obtain the actual coordinate value of predetermined pattern, its horizontal ordinate x value is 2.0900 millimeters, and ordinate y value is 29.1574 millimeters; Then obtain the reference coordinate value of predetermined pattern, its horizontal ordinate x value is 2.1606 millimeters, and ordinate y value is 29.1568 millimeters.
By calculating, the difference between this predetermined pattern actual coordinate value and reference coordinate value can be obtained, i.e. actual difference, specifically, the actual difference of its x coordinate and the actual difference of y coordinate can be obtained respectively, be respectively: the actual difference of x coordinate is 76 microns, and the actual difference of y coordinate is 6 microns.Under present technological conditions, be reasonable error scope within 10 microns, therefore, the actual difference of x coordinate is consistent with its predetermined difference value, and y direction can be thought without drop, thus can judge, the alignment precision of this lithography layer is error free.
The detection method of alignment precision provided by the present invention, by according to the actual coordinate value of predetermined pattern and preset coordinates value, calculate actual difference and the predetermined difference value of this predetermined pattern, and both are compared, thus determine that whether the position of overlay mark is accurate, to complete the detection of alignment precision, thus avoid and each concrete overlay mark manually searched by microscope and marks, save a large amount of manpowers and time, decrease the reduction of the error brought in process overlay mark being marked and sets and the product yield caused.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (5)
1. a detection method for alignment precision, is characterized in that, comprising:
Obtain the first reference coordinate value and the second reference coordinate value of predetermined pattern;
Obtain the actual coordinate value corresponding to predetermined pattern and preset coordinates value respectively;
Calculate the actual difference of described actual coordinate value and described first reference coordinate value respectively, and the predetermined difference value between described preset coordinates value and described second reference coordinate value;
Described actual difference and predetermined difference value are compared, realizes the detection to alignment precision;
Described first reference coordinate value for the coordinate figure of predetermined pattern corresponding to specific lithography layer, described second reference coordinate value be the coordinate figure of predetermined pattern on the mask that this specific lithography layer is corresponding.
2. the detection method of alignment precision as claimed in claim 1, it is characterized in that, described specific lithography layer is active area lithography layer.
3. the detection method of alignment precision as claimed in claim 1, it is characterized in that, described actual coordinate value is for predetermined pattern is at the coordinate figure needing to detect corresponding to the layer of alignment precision, and described preset coordinates value is the coordinate figure of predetermined pattern on the mask corresponding with layer to be measured.
4. the detection method of alignment precision as claimed in claim 1, it is characterized in that, described predetermined pattern is overlay mark.
5. the detection method of alignment precision as claimed in claim 1, it is characterized in that, describedly actual difference and predetermined difference value compared the detection realized alignment precision comprise: when described actual difference and described predetermined difference value consistent time, then alignment precision is error free.
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| CN104730869B (en) * | 2015-03-25 | 2017-02-22 | 上海华力微电子有限公司 | Method for achieving nanoscale alignment precision by employing microscopic method |
| IL262114B2 (en) * | 2016-04-22 | 2023-04-01 | Asml Netherlands Bv | Determination of stack difference and correction using stack difference |
| CN112542396A (en) * | 2020-06-30 | 2021-03-23 | 深圳中科飞测科技股份有限公司 | Overlay mark and alignment error measuring method |
| CN114200790A (en) * | 2022-01-12 | 2022-03-18 | 澳芯集成电路技术(广东)有限公司 | Method and device for reducing wafer overlay deviation |
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| JPH0536583A (en) * | 1991-07-30 | 1993-02-12 | Hitachi Ltd | Alignment method and manufacture of semiconductor integrated circuit device |
| JP2616676B2 (en) * | 1993-11-30 | 1997-06-04 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JP2003068612A (en) * | 2001-08-27 | 2003-03-07 | Nikon Corp | Apparatus for inspecting superposition |
| CN101228615B (en) * | 2005-07-26 | 2012-03-21 | 富士通半导体股份有限公司 | Para-position method |
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Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address after: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Grace Semiconductor Manufacturing Corp. |
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Free format text: CORRECT: APPLICANT; FROM: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI TO: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION |
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