TWI512868B - Image Key Dimension Measurement Calibration Method and System - Google Patents

Description

Image key size measurement correction method and system

The present invention relates to an image measurement correction method and system, and more particularly to a CD (Critical Dimension) measurement correction method and system for a semiconductor process.

The semiconductor process is mainly based on the semiconductor process technology defined on the wafer to form a complex and large number of semiconductor components, and in such a highly layered process, if the critical dimension (CD) of the formed wiring pattern is generated, an error occurs. At this time, the component characteristics cannot reach the desired target value, such as the gate CD error, or the resistance of the component or the back metal connection layer. Due to the rapid development of semiconductor process technology, the precision of the critical dimensions of the laminated line image generated by each process is controlled and confirmed under the condition that the pitch and groove size requirements are smaller and smaller (pitch<140 nm). Stability, in order to accurately control the overlay between layers and layers, to ensure the yield and production efficiency of subsequently fabricated semiconductor components, is a relatively important factor in process management.

There are many ways to measure critical dimensions today, such as scanning electron microscopy (CD-SEM), and optical scatterometry, which can be used to measure and control critical dimensions during production; atomic force microscopy ( AFM) can be used for off-line testing of process development the amount. However, when the above-mentioned measuring machine, such as an optical microscope (OM) or an electronic scanning photographic mirror (SEM), is used to measure the critical size, since the CD is measured by the image, the error of the machine itself may be caused. The error of the measurement result; for example, the scale of the image to be measured is related to the magnification of the image to be tested, so when the image to be measured is measured by the measuring machine, if the measurement is actual When the magnification is different from the preset magnification value, or the X and Y directions of the image to be tested are asymmetrically amplified, the critical size of the image to be measured may also cause an error, and the actual critical size cannot be obtained. value.

Accordingly, it is an object of the present invention to provide a method that makes it easier to monitor and correct image critical dimension measurements.

Therefore, the image key size measurement correction method of the present invention comprises: an image acquisition step, a measurement step, and a correction calculation step.

The image obtaining step is: capturing a pattern image from a substrate through a one-time image, the pattern image comprising a predetermined image, and a target image to be measured or corrected, the predetermined image having a fixed pitch, and Has a preset pitch size preset.

The measuring step is to measure the predetermined image and the Pixel number of the target image to be measured or corrected in a predetermined direction, or measure at least one pitch of the predetermined image along a predetermined direction ( Pitch) obtains a span size measurement value, and measures a critical size of the target image to be measured or corrected to obtain a critical dimension measurement value.

The correction calculation step is to utilize the pitch size of the predetermined image The preset value is compared with the measured value of the pitch size of the predetermined image or the number of pixels, and the result of the ratio calculation is used to correct the key size measurement value of the target image to be measured or corrected, or calculate The critical size of the target image to be measured or corrected.

Preferably, the image key size measurement correction method is characterized in that the correction calculation step is to perform a ratio operation or a linear comparison between the preset value of the pitch size of the predetermined image and the measurement of the pitch size of the predetermined image. Obtaining a unit size measurement correction value, and then using the measurement correction value to correct the key size measurement value of the target image to be measured or corrected, or using the pitch size of the predetermined image The set value is compared with the pixel number of the predetermined image to obtain a unit pixel dimension value, and the unit pixel size value is multiplied by the pixel number of the target image to be measured or corrected. The actual critical size of the target image to be measured or corrected along the predetermined direction is obtained.

Preferably, the image key size measurement correction method is characterized in that, in the measuring step, the measurement direction of the key size of the target image to be measured or corrected is the same as the measurement direction of the predetermined image.

Preferably, the image key size measurement correction method is characterized in that the target image to be measured or corrected is selected from a line width, a line pitch, a through hole, a shallow groove, an island protrusion formed on the substrate, or It is a registration mark, and the correction calculation step is to perform key size correction or key size difference calculation on the target image to be measured or corrected by using the ratio calculation result.

Preferably, the image key size measurement and correction method is as follows, wherein the target image to be measured or corrected may be selected from the one-time image. The obtained predetermined image or the image other than the predetermined image is taken.

Preferably, the image key size measurement correction method is characterized in that the target image to be measured or corrected and the predetermined image bit are in the same or different layers.

Preferably, the image key size measurement correction method is characterized in that the target image to be measured or corrected and the predetermined image position are on different layers of the substrate, and the layer can be used as a reference for correction of the front layer. .

Preferably, the image key size measurement correction method further includes an output step after the correction calculation step, which is different from the position of the substrate, different substrates, different measurement directions, or different measurement machines. The calculated correction and calculation results are output to the outside.

Still another object of the present invention is to provide an image critical dimension measurement correction system.

The receiving storage unit can receive and store a pattern image obtained by capturing from a substrate through a one-time image, the pattern image comprising a predetermined image and a target image to be measured or corrected. The predetermined image has a fixed pitch and has a preset pitch size preset value.

The measurement calculation unit measures the pixel number of the predetermined image and a target image to be measured or corrected, or measures at least one pitch of the predetermined image along a predetermined direction to obtain a measured value of the distance dimension. And measuring a critical size of the target image to be measured or corrected along the predetermined direction to obtain a key size measurement value, using a preset size of the predetermined size of the predetermined image and a pitch size of the predetermined image Measured value or pixel number ratio And calculating, by using the ratio operation result, correcting the critical dimension measurement value of the target image to be measured or corrected, or calculating a critical size of the target image to be measured or corrected.

Preferably, the image key size measurement and correction system further includes a correction output unit for externally outputting the corrected image or the corrected or calculated result of the target image to be measured or corrected.

Preferably, the image key size measurement and correction system is characterized in that the image capturing unit is selected from an optical microscope, an electronic scanning microscope, or a stacked error measuring machine.

The effect of the invention is to use a system preset pitch size value of a predetermined image as a standard, to correct a key size measurement value of the target image to be measured or corrected, or to calculate a target image to be measured or corrected. The critical dimensions eliminate the measurement distortion caused by errors in the measurement machine itself, such as magnification errors.

21‧‧‧Image acquisition steps

22‧‧‧Measurement steps

23‧‧‧Correction calculation steps

A~D‧‧‧ alignment mark

F‧‧‧film

I‧‧‧Predetermined image

J‧‧‧ critical dimension measurement

K‧‧‧pitch size measurement

Kx‧‧‧X direction pitch size measurement

Ky‧‧‧Y direction pitch size measurement

L‧‧‧ line

P‧‧‧ pitch

S‧‧‧ line spacing

SA1, SB1, SC1, SD1‧‧‧ Measuring distance

SA2, SB2, SC2, SD2‧‧‧ actual distance

T1, T2‧‧‧ target pattern

The other features and advantages of the present invention will be apparent from the detailed description of the preferred embodiments illustrated in the accompanying drawings. FIG. Illustrating the repeating pattern formed by the same process, the pitch P at the same critical condition; FIG. 3 is a schematic diagram for explaining the measuring step of the preferred embodiment; FIG. 4 is a schematic view for assisting the description of the preferred embodiment Correcting the calculation steps, using the progressive line to map the aspect; Figure 5 is a schematic diagram showing the correction of the box-in-box alignment mark and the key size correction of the cross mark by the preferred embodiment; Figure 6 is a schematic view showing the use of the preferred embodiment Correction of the bit identification mark; Fig. 7 is a schematic view for explaining the correction result of Fig. 6; Fig. 8 is a view for explaining the target patterns T1, T2 formed in different laminates.

The image critical dimension measurement and correction method of the invention is used for eliminating the distortion of the key dimension measurement result of the image pattern caused by the machine error when performing critical dimension measurement on the image pattern formed by the process of the semiconductor component. Method to ensure correct measurement of critical dimensions.

A preferred embodiment of the image critical dimension measurement calibration method of the present invention is performed by a critical dimension measurement calibration system.

The critical dimension measurement correction system comprises: a receiving storage unit, a measurement calculation unit, and a correction output unit. Specifically, the measuring system can be an internal computing system or an independent computer system of the camera, and the camera can be an optical microscope, an electronic scanning microscope, or a stacking error measuring machine. .

The receiving storage unit can receive and store at least one pattern image captured by a capturing unit from a substrate via a one-time image, the pattern image comprising a predetermined image, and a target image to be measured or corrected The predetermined image has a fixed pitch and has a preset section Distance size preset.

The measurement calculation unit measures the predetermined image stored in the receiving storage unit and the pixel number of the target image to be measured or corrected along a predetermined direction; or measures the predetermined image along a predetermined direction At least one pitch, a measured value of the distance dimension is obtained, and a critical dimension of the target image to be measured or corrected along the predetermined direction is measured to obtain a critical dimension measurement value. And using the preset value of the pitch size of the predetermined image, performing a ratio operation with the measured value of the pitch size of the predetermined image or the number of pixels, and then using the ratio calculation result to the target image to be measured or corrected The critical dimension measurement is corrected or the critical size of the target image to be measured or corrected is calculated.

The correction output unit outputs the corrected or calculated result of the predetermined image and the target image to be measured or corrected.

Referring to FIG. 1, the preferred embodiment of the image key size measurement calibration method of the present invention comprises an image acquisition step 21, a measurement step 22, and a correction calculation step 23.

First, the image obtaining step 21 is performed. The image capturing machine captures a pattern image from a substrate through a one-time image capturing, and the pattern image includes a predetermined image and a target image to be measured or corrected. .

The substrate has a substrate selected from a semiconductor, a blank, or a glass, and the predetermined image and the target image to be measured or corrected are a predetermined pattern formed on the substrate after the semiconductor process. The camera is captured by the same image and comes from the same image. The target image to be measured or corrected may be selected from the same or different from the predetermined image And the predetermined image and the target image to be measured or corrected may be located in the same layer or different layers of the substrate. The predetermined image has a fixed pitch, or a fixed line density, and has a preset pitch size preset value, and the target pattern to be measured or corrected is selected from a line width formed on the substrate, Line spacing, through holes, shallow grooves, island-like protrusions, or alignment measurement marks.

The semiconductor process can be a process such as lithography or etching, and the process is not specifically used for the fabrication of an IC (integrated circuit), and can also be used to fabricate other components having a micrometer or nanometer scale, such as an optical system. , a mask pattern, a detection pattern of a magnetic storage element, a flat panel display, or a liquid crystal display. The predetermined pattern formed by the semiconductor process may be composed of a line, a space, or an overlay measurement mark.

Referring to FIG. 2, it is to be noted that repeating patterns formed by the same process, such as line/space, island/trench, and alignment mark, use the same critical condition because they have substantially the same contour. When the sidewall of the repeating pattern is measured for the pitch (line+space or island+trench) P, the measured pitch size should be the same, so the pitch P of the same set of repeating patterns can be regarded as a fixed value. Therefore, the pitch P distributed along the X direction in the predetermined image pattern in FIG. 2 is exemplified by line/space, and the line (L) and space(S) of the repeating pattern are distributed along the X direction. , can be regarded as the same set of patterns, so the same critical condition (the same line segment in Figure 1 indicates the same critical condition) is used to make the pitch from the side wall of the repeating pattern (L When the size of the +S) is measured, the pitch size of the repeating pattern along the X direction can be regarded as the same, so that the preset value of the single pitch, the measured value, or the average of the plurality of pitches can be It is regarded as the overall performance of the pitch of the repeating pattern, and can also be used as a dimension measurement calculation or calibration standard of the image image obtained by the measuring machine in one-time image capturing.

And then performing the measuring step 22, measuring the predetermined image, and the Pixel number of the target image to be measured or corrected, or measuring the predetermined image along the predetermined direction and the to-be-measured or At least one pitch (Pitch) of the corrected target image is obtained as a pitch size measurement.

Then, the correction calculation step 23 is performed, and the pitch size preset value of the predetermined image is compared with the pitch size measurement value or the pixel number of the predetermined image, and the ratio operation result is used to measure or The critical dimension measurement of the corrected target image is corrected, or the critical size of the image to be measured or corrected is calculated.

Referring to FIG. 3, the X direction is taken as an example for explanation: it is assumed that the predetermined image has a system preset pitch size preset value M along the X direction, and the predetermined image has m pixels along the X direction, and the measurement is performed. Step 22 is to measure the pitch size of the predetermined image along the X direction by using the measuring scale of the image capturing machine to obtain a distance measurement value K; then, the image capturing machine table is further along the X direction. The measuring scale measures the critical size of the target image to be measured or corrected, and obtains a key dimension measurement J of the target image to be measured or corrected, and a picture of the target image to be measured or corrected The prime number assumes that the target image to be measured or corrected has n pixels.

Therefore, the correction calculation step 23 can use the pitch size preset value M of the predetermined image to perform a ratio operation with the pitch size measurement value K or the pixel number m of the predetermined image, and then use the ratio operation result to treat the The critical dimension measurement J of the measured or corrected target image is corrected, or is used to calculate a critical size of the target image to be measured or corrected along the predetermined direction.

In detail, the correction calculation step 23 is to perform a ratio operation or a linear comparison with the pitch size preset value M of the predetermined image and the pitch size measurement value K of the predetermined image to obtain a critical size of one unit size. Measuring the correction value Fx, and then using the critical dimension measurement correction value Fx to correct the key size measurement value J of the target image to be measured or corrected; or, the pitch size of the predetermined image may be utilized The preset value M is compared with the number m of pixels of the predetermined image to obtain a unit pixel size value Rx, and the unit pixel size value R and the number of pixels of the target image to be measured or corrected are used. Multiply, the actual key size of the target image to be measured or corrected along the X direction can be obtained, and the key size calculation method can be applied only to measure or output the image contour of the target image to be measured or corrected. Take the image measuring machine.

That is to say, the key dimension correction value or standard value of the target image can be obtained by using the following equation relationship:

More specifically, the pitch size measurement value K of the predetermined image It may be a single pitch size measurement value K1, two pitch size measurement values K2, or a plurality of pitch size measurement values, for example: K1+K2+K3+K4; and used to calculate the key The calculation standard of the pitch size preset value M of the size measurement correction value Fx is the same as the pitch size measurement value K of the predetermined image, and can be preset by the system according to the pitch size measurement value K. One pitch size preset value M, two pitch size preset values 2×M, or a mixture of multiple pitch size preset values, for example: M+(2×M)+(3×M)+(4× M)), in this way, the ratio calculation of the pitch size preset value M of the predetermined image and the pitch size measurement value K can be used, for example: M/K1, 2M/K2, or (M+2M+3M+ 4M) / (K1 + K2 + K3 + K4), the measurement correction value Fx is obtained. Alternatively, referring to FIG. 4, the pitch size preset value and the pitch size measurement value or the pixel number of the predetermined image may also be used for mapping (Fig. 4 is measured by the pitch size preset value and the pitch size). The value is shown as an example, and a progressive line is obtained. Thus, the size measurement value obtained by measuring the target image to be measured or corrected is substituted into the progressive line, and the to-be-measured or corrected can be obtained. The actual key size value of the target image.

Similarly, when the target image to be measured or corrected is subjected to key size correction or image size calculation in the Y direction, the same measurement as the X direction and the correction calculation method may be used to perform the target image. Key size correction or image size calculation in the Y direction.

It is worth mentioning that the preferred embodiment may further have an output step for different positions from different or different substrates, different measurement directions (X or Y direction), different laminates, or different measurements. The measured correction value or the comparison result calculated by the machine, by the correction output unit Output as a reference parameter for monitoring or calibration of the machine.

For example, the calibration calculation step 23 can be used to know that the standard ratio of the pitch preset value to the measured value of the measuring machine is M/K, and the correction ratio of the machine: ((KM)/K)=1- M/K; therefore, it can output M/K or 1-M/K for different measurement machines, different wafers, or different measurement positions of the same wafer (such as upper left and lower right). Reference parameters for monitoring or correction of the machine, or offset values, pitch measurement ratios, pitch ratios, and ratios of the same type of target pattern that can be extracted from different machines The pitch/pixel ratio is used to compare the differences between different machines.

Referring to FIG. 5, FIG. 5 is a box-in-box alignment mark for alignment between semiconductor laminates, and a predetermined image I for correction around the box-in-box alignment mark, and assuming the reservation. The pitch size preset values Mx and My of the image I along the X direction and the Y direction are 1.0 μm.

Measure the pitch size of the predetermined image along the X direction. It is to be noted that when measuring the pitch size of the predetermined image along the X direction, the line at the front and rear boundaries is deducted. 6 pitches can be measured, and the size measurement values of the 6 pitches are averaged to obtain the pitch size measurement value Kx of the predetermined image along the X direction, assuming the pitch size measurement value Kx= 0.95 μm. Next, measuring the width of the cross-alignment mark of the box-in-box along the X direction, obtaining a critical dimension measurement CDx of the cross-alignment mark along the X direction, assuming CDx=1.05 μm, therefore, The preset size Mx of the predetermined image along the X direction is divided by the pitch size measurement value Kx of the predetermined image along the X direction, and the measuring machine can be obtained. The measured correction value along the X direction is Fx=Mx/Kx=1.0/0.95=1.05

Referring to FIG. 5, after the calibration correction value Fx of the X direction is obtained by using the corrected image, the critical dimension measurement correction value Fx of the X direction can be used as the box-in-box cross alignment mark. The key dimension measurement value CDx in the X direction is corrected, that is, the actual key size of the box-in-box alignment mark along the X direction = key dimension measurement value CDx × Fx = 1.05 × 1.05 = 1.1 μm. Similarly, when the correction of the key size measurement value CDy of the box-in-box cross-alignment mark along the Y direction is performed, the pitch size measurement value Ky of the predetermined image along the Y direction can be measured. Then, in the same manner, the measured correction value Fy of the corrected image along the Y direction is obtained, and therefore, the actual key size of the box-in-box cross-alignment mark along the Y direction=key size measurement value CDy ×Fy. In addition, as shown in FIG. 5, the measured distances of the inner frame and the outer frame on the left and right sides of the box-in-box alignment mark in the X direction are respectively a μm and b μm, and therefore, the amount calculated by the foregoing calculation can also be used. Measuring the correction value Fx, correcting the overlay shift of the box-in-box cross-alignment mark, that is, the actual stack-bias of the box-in-box cross-alignment mark along the X direction The shift value = (ab) / 2 x Fx.

Referring to FIG. 6, FIG. 6 shows a set of alignment mark marks for different laminates of semiconductor substrates, wherein A and B are in the alignment marks arranged in the Y direction (FIG. 6). In the same base layer, C and D (indicated by blank strips in Figure 6) are in the same layer, A, B, C, and D are in different layers, and the cross mark in the middle is the center of the original setting. Point, and the A, B, C, D along the A plurality of identical pitches Y1 are arranged in the Y direction.

Referring to FIG. 7 , the alignment mark shown in FIG. 6 is corrected in the Y direction, and the key dimensions of the alignment marks A, B, C, and D in different layers are corrected as an example: the alignment mark A, The measurement distances from the midpoint to the center point of B, C, and D are SA1, SB1, SC1, and SD1, and the alignment marks A and B can be obtained by calculating the actual value of the key dimension and the actual value of the key dimension, respectively. The critical dimension of the pitches Y1 and C1 is measured by the correction value Fy. Therefore, the measured distances SA1, SB1, SC1, and SD1 are respectively used for the critical dimensions of the alignment marks A, B, C, and D, respectively. By measuring the correction value Fy, the actual distances SA2, SB2, SC2, and SD2 of the midpoint to the center point of the alignment marks A, C, B, and D can be obtained, and the key size correction of the alignment mark is completed. Then, the corrected alignment mark can be used to perform the overlay error measurement, thereby avoiding the error of the overlay error measurement result due to the deviation of the key dimension measurement. It should be further explained that the predetermined patterns located in different layers can also be mutually corrected as a reference, that is, the back layer (upper layer) for the front layer (lower layer) or the front layer (lower layer) for the back layer (upper layer) Corrected as a reference. For example, taking the alignment marks A, B, C, and D located in different layers as an example, SA2 and SB2 obtained by the alignment marks A and B can be used as SC1 and SD1 of the alignment marks C and D. Calibration standard.

In addition, referring to FIG. 8, when the target patterns T1, T2 are different laminates formed on the semiconductor substrate, such as the front and back layers, since the pattern T1 formed on the front layer is subjected to the film F deposited thereon (for example The refractive index, thickness, surface curvature, or pattern of the dielectric film affects the top view of the pattern T1, resulting in a difference in the unit corresponding length (um) of different laminates, which affects the target pattern T1. The accuracy of the key dimension measurement results of T2. Therefore, the predetermined pattern of the same structural layer as the target patterns T1 and T2 can be used to obtain the key dimension measurement correction value corresponding to the structural layer by calculating the key dimension measurement value and the key dimension actual value respectively. The critical dimension measurement results of the target patterns T1 and T2 are corrected to solve the aforementioned problems. In addition, further calculation or output of this difference can also monitor the size variation of the micro-area image, and can also avoid the measurement error of the key size caused by the difference of the unit pixel corresponding length (um) of the front/rear layer image, resulting in subsequent alignment. Or the stack error is wrong.

It should be further noted that the present invention can utilize the critical dimension measurement correction value, and the pixel unit value can be used as a correction of the key dimension measurement result of the target image to be measured or corrected, and the candidate is obtained. In addition to the image size of the target image measured or corrected, the pitch size measurement value measured at different times and the preset value of the pitch size may be compared by outputting the same machine, or specific The target pattern is corrected by comparing the key dimension values before and after the preset standard pitch, or by using the pitch size measurement value and the pitch size preset value measured by different machines, for example, The area offset (offset), length, or ratio (such as pitch measurement ratio, pitch pixel ratio, pitch/pixel ratio), etc., to compare the differences between different machines, And use this result as a monitoring of the stability of the machine.

In summary, the present invention utilizes a pitch ruler that will preset a video. The preset value of the inch is compared with the measured value of the pitch size of the preset image or the number of pixels of the preset image, and the standard unit length value of the measuring machine is obtained, so that the critical dimension measurement can be excluded. The process, because the machine or the pattern formed by different layers of the film caused by the error of the corresponding pixel length (um), resulting in the distortion of the critical dimension measurement results, and can accurately monitor and correct the pattern The critical dimension measurement results are used to ensure that the subsequent process pattern can be accurately aligned with the pattern of the front layer, the alignment accuracy is improved, and the component requirements are met, so that the object of the present invention can be achieved.

However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification of the present invention are It is still within the scope of the invention patent.

21‧‧‧Image acquisition steps

22‧‧‧Measurement steps

23‧‧‧Correction calculation steps

Claims (11)

An image key size measurement and correction method includes: an image acquisition step of acquiring a plurality of pattern images from a substrate through a one-time image, the pattern images comprising a predetermined image and a target image to be measured or corrected The predetermined image has a fixed pitch and has a preset pitch size preset value; a measuring step of measuring the predetermined image and the pixel of the target image to be measured or corrected along a predetermined direction The number, or measuring at least one pitch of the predetermined image along a predetermined direction to obtain a distance dimension measurement value, and measuring a critical size of the target image to be measured or corrected to obtain a critical dimension measurement value And a correction calculation step of performing a ratio operation on the pitch size preset value of the predetermined image and the pitch size measurement value or the number of pixels of the predetermined image, and using the ratio operation result to measure or correct the ratio The critical dimension measurement of the target image is corrected, or the critical size of the image to be measured or corrected is calculated. The image key size measurement and correction method according to claim 1, wherein the correction calculation step is to perform a ratio operation or a linear ratio between the preset value of the pitch size of the predetermined image and the measurement of the pitch size of the predetermined image. Or, obtaining a measurement correction value of a unit size, and then using the measurement correction value to correct the key size measurement value of the target image to be measured or corrected, or using the pitch size preset of the predetermined image The value is compared with the pixel number of the predetermined image to obtain a unit pixel size value, and the unit pixel size value and the target image to be measured or corrected are used. The prime numbers are multiplied to find the actual critical size of the target image to be measured or corrected along the predetermined direction. The image key size measurement and correction method according to claim 1, wherein in the measuring step, the measurement direction of the critical size of the target image to be measured or corrected is the same as the measurement direction of the predetermined image. . The image key size measurement correction method according to claim 1, wherein the target image to be measured or corrected is selected from a line width, a line pitch, a through hole, a shallow groove, and an island protrusion formed on the substrate. Or the alignment measurement mark, the correction calculation step is to use the ratio operation result to perform key size calculation on the target image to be measured or corrected, or correction of the key size difference. The image key size measurement correction method of claim 1, wherein the target image to be measured or corrected may be selected from the predetermined image obtained by the one-time image capture, or an image other than the predetermined image. . The image key size measurement correction method according to claim 2, wherein the target image to be measured or corrected and the predetermined image position are on the same or different layers of the substrate. The image key size measurement correction method according to claim 6, wherein the target image to be measured or corrected and the predetermined image position are on different layers of the substrate, and one of them can be used as a correction reference. The image key size measurement correction method according to claim 1, further comprising an output step after the correction calculation step, which is different from the position of the substrate, different substrates, different measurement directions, or different measuring machines. The calculations and calculation results obtained by the station are output to the outside. An image key size measurement and correction system includes: a receiving storage unit, receiving and storing a pattern image captured by a image capturing unit from a substrate through a one-time image, the pattern image comprising a predetermined image, and waiting for Measuring or correcting the target image, the predetermined image has a fixed pitch and has a preset pitch size preset value; and a measurement calculation unit that measures the predetermined image and a measurement or correction a pixel number of the target image, or measuring at least one pitch of the predetermined image along a predetermined direction to obtain a distance dimension measurement value, and measuring a key of the target image to be measured or corrected along the predetermined direction Dimensing, obtaining a key dimension measurement value, using a preset value of the pitch size of the predetermined image to perform a ratio operation with a pitch size measurement value or a pixel number of the predetermined image, and using the ratio operation result to the volume The critical dimension measurement of the target image to be measured or corrected is corrected, or the critical size of the target image to be measured or corrected is calculated. The image key size measurement and correction system of claim 9, further comprising a correction output unit that outputs the corrected image or the corrected or calculated result of the target image to be measured or corrected. The image key size measurement and correction system of claim 9, wherein the image capturing unit is selected from the group consisting of an optical microscope, an electronic scanning microscope, or a stacked error measuring machine.