CN104934413A - Overlapping alignment mark and substrate with the same - Google Patents
Overlapping alignment mark and substrate with the same Download PDFInfo
- Publication number
- CN104934413A CN104934413A CN201410100759.7A CN201410100759A CN104934413A CN 104934413 A CN104934413 A CN 104934413A CN 201410100759 A CN201410100759 A CN 201410100759A CN 104934413 A CN104934413 A CN 104934413A
- Authority
- CN
- China
- Prior art keywords
- alignment mark
- alignment
- mark
- lamella
- overlapping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides an overlapping alignment mark and a substrate with the same. The overlapping alignment mark is arranged on the substrate. The substrate comprises a basic layer and a plurality of sheet layers which are arranged on the basic layer. The overlapping alignment mark comprises the components of: a basic layer alignment mark which is arranged on the marking layer of the basic layer; and sheet layer alignment marks which are arranged on corresponding sheet layers, wherein at least two sheet layers in the sheet layers which are provided with the sheet layer alignment marks realize alignment with the basic layer through a position relationship between the corresponding sheet layer alignment mark and a same basic layer alignment mark. According to the overlapping alignment mark configuration mode of the invention, more mark areas such as drawing groove are released, thereby saving the marking area which is occupied by the overlapping alignment mark.
Description
Technical field
The application relates to technical field of manufacturing semiconductors, more specifically, relates to the substrate that a kind of overlapping alignment marks and has this overlapping alignment mark.
Background technology
In semiconductor fabrication process, especially comprise in the manufacturing process of the integrated circuit (IC)-components of micro pattern, photoetching and detection technique are wherein most crucial parts.In semiconductor chip, the various physical units of transistor, electric capacity, resistance and metal carbonyl conducting layer are arranged in crystal column surface or top layer.Different components and interconnection line thereof ionization can become many layers when integrated circuit (IC) design, and every layer is all be made up of many plane characteristic figures.Photoetching process is exactly realize the conversion of planar design figure at substrate surface.In photo-mask process, be coated in by photoresist film and be positioned at by after on patterned layer in Semiconductor substrate, this photoresist film is exposed and develops, thus is forming photoresist pattern by patterned layer.This layer utilizes photoresist pattern to be etched as etching mask, thus forms required pattern on a semiconductor substrate.When being formed by photoetching process when layer and front layer pattern of integrated circuit (IC)-components, when layer pattern accurately should be aimed at relative to front layer pattern.
Accurate aligning when between layer and front layer pattern is obtained by reticle alignment and wafer aligned usually, and these exposed portions being aligned in lithographic equipment carry out.The aligning of pattern corrects according to lamination correction data, and these data are obtained by the measuring lamination step performed in the lithographic apparatus.The alignment error of pattern utilizes the overlapping alignment mark be formed on the marked region (as Waffer edge or marking groove) of Semiconductor substrate to measure.
Fig. 1 shows the layout plan of overlapping alignment mark in prior art.In FIG, multiple marking groove 3 is set on semiconductor substrate 1, Semiconductor substrate 1 is divided into multiple Dai Zhi district 2 by each marking groove 3, in marking groove 3, be provided with overlay mark district 4(draw according to the proportionate relationship of the reality of each several part, but in order to clearly illustrate that the position of stacked mark zone 4, the Area processing in overlay mark district 4 is obtained relatively large).
Fig. 2 shows the structure chart of the overlapping alignment mark of box (box in box) form in box in prior art.With reference to Fig. 2, in this box, the overlapping alignment mark 10 of box-like formula comprises the first overlay mark 11 and the second overlay mark 12.First overlay mark 11 is formed in first wafer layer (front layer) of Semiconductor substrate, and the first overlay mark 11 has rectangular shape.Second wafer layer (work as layer) of the second overlay mark 12 on the first wafer layer is upper to be formed, and the second overlay mark 12 has the rectangular shape being less than the first overlay mark 11.In the prior art shown in Fig. 2, by measuring the distance of the Distance geometry Y-direction of the X-direction between the first overlay mark 11 and the second overlay mark 12, detect the alignment error of the pattern being formed at Semiconductor substrate predetermined portions.In this application, X-direction all refers to the horizontal direction of paper; Y-direction all refers to the vertical direction of paper.
Fig. 3 shows the structure chart of the overlapping alignment mark of prior art discal patch discal patch (bar in bar) form.With reference to Fig. 3, the overlapping alignment mark 20 of this middle strips comprises the first overlay mark 21 and the second overlay mark 22.First overlay mark 21 is formed in first wafer layer (front layer) of Semiconductor substrate.First lamination mark 21 has the strip structure of two X-directions and the strip structure of two Y-directions, and four strip structure arrangements are rectangular shape, but adjacent strip structure does not connect each other.Second wafer layer (work as layer) of the second overlay mark 22 on the first wafer layer is upper to be formed.Second overlay mark 22 also has the strip structure of two X-directions and the strip structure of two Y-directions, these four strip structure arrangements of second overlay mark 22 are for being less than the rectangular shape of the rectangular dimension of the first overlay mark 21, and the adjacent strip structure of the second overlay mark 22 does not also connect each other.In the prior art shown in Fig. 3, by the distance of the center line of the list structure of the center line and the second overlay mark 22 liang of X-directions of measuring the list structure of two X-directions in the first overlay mark 21, and measure the distance of the center line of list structure of two Y-directions and the center line of the list structure of the second overlay mark 22 liang of Y-directions in the first overlay mark 21, detect the alignment error of the pattern being formed at Semiconductor substrate predetermined portions.
Fig. 4 shows the structure chart of the overlapping alignment mark of grizzly bar form in prior art.As shown in Figure 4, the overlapping alignment mark 30 of this grizzly bar form comprises the first alignment mark 31 and the second alignment mark 32.Wherein, first alignment mark 31 is formed at first wafer layer (front layer) of Semiconductor substrate, comprise four group of first grizzly bar group, often organize the narrow grizzly bar that the first grizzly bar group comprises many parallel interval settings, wherein, two group of first grizzly bar group extends in X direction, another two group of first grizzly bar group extends along Y-direction, the the first grizzly bar group extended in X direction is arranged alternately with the first grizzly bar group extended along Y-direction, and four group of first grizzly bar group has certain distance each other, thus form an accommodation section at the middle part of the first alignment mark 31.Second alignment mark 32 is formed in the second wafer layer (working as layer) on the first wafer layer, comprises four group of second grizzly bar group, often organizes the wide grizzly bar wider than aforementioned narrow grizzly bar that the second grizzly bar group comprises many parallel interval settings.Wherein, two group of second grizzly bar group extends in X direction, another two group of second grizzly bar group extends along Y-direction, the the second grizzly bar group extended in X direction is arranged alternately with the second grizzly bar group extended along Y-direction, and four group of second grizzly bar group distance is each other very little, thus when the first wafer layer is aimed at the second wafer layer, the second alignment mark 32 is positioned at the accommodation section at the middle part of the first alignment mark 31.In the prior art shown in Fig. 4, whether aim at the second overlay mark 22 alignment error detecting the pattern being formed at Semiconductor substrate predetermined portions by measuring the first overlay mark 21.
In the process realizing the application, applicant finds that above prior art at least exists following problem:
The overlapping alignment mark of strips or grizzly bar form in box-like formula, bar in the box of above prior art, front layer provides outside box or bar or grizzly bar group, when layer makes inner side box or bar or grizzly bar group.Therefore, every layer at least must provide two groups of alignment marks, one group of alignment mark be outside box or bar or grizzly bar group as the alignment mark with rear layer, another group alignment mark is that inner side box or bar or grizzly bar group are as the alignment mark with front layer.Some key stratums then need more outside box or bar or grizzly bar group, think that other layer provides and aim at the mark.Such as, under the arrangement of the alignment mark of above prior art, for important wafer layer, at least need one group of autoregistration mark, one group of polycrystalline silicon grid layer alignment mark, one group of lead-in wire aperture layer alignment mark.Along with the development of semiconductor fabrication, the characteristic size of semiconductor device has narrowed down to below 28nm technology node, and double exposure and more rear end (BEOL, back end of line) process layer implant photoetching process.Therefore, need to arrange increasing alignment mark in the marked region of wafer, need to carry out more frequently locating tab assembly between metal level (Metal layers) and via layer (Via layers).High-accuracy and high yield become the basic demand of patterned area measuring lamination.On the other hand, for meeting the needs of technology controlling and process, also need to arrange that more verification pattern (test key) and monitoring figure (monitor pattern) are to meet the detection demands such as characteristic line breadth measurement and defects detection in marking groove.But the space of marking groove is limited, the arrangement of the overlapping alignment mark of above prior art is difficult to the layout demand of satisfied increasing figure.
Summary of the invention
The application's object is provide a kind of overlapping alignment to mark and have the substrate of this overlapping alignment mark, is intended to save the marked region shared by overlapping alignment mark.
This application provides a kind of overlapping alignment mark, overlapping alignment mark is arranged on substrate, substrate comprises basal layer and is arranged at the multiple lamellas on basal layer, and overlapping alignment mark comprises: basal layer alignment mark, and basal layer alignment mark is arranged on the marked region of basal layer; Lamella alignment mark, each lamella alignment mark is arranged on corresponding lamella, wherein, to be provided with in each lamella of lamella alignment mark at least two lamellas to be realized and the aiming at of basal layer by the position relationship between corresponding lamella alignment mark and same basal layer alignment mark.
Further, each lamella alignment mark is set to: under the alignment that each lamella being provided with lamella alignment mark is all aimed at basal layer, in the projection of the overlapping alignment mark in the plane being parallel to substrate, each lamella alignment mark all zero lap ground settings each other of described at least two lamellas.
Further, each lamella alignment mark of described at least two lamellas is set to: in an aligned state, and described in projection, each lamella alignment mark of at least two lamellas is all positioned at the layout area limited by described same basal layer alignment mark.
Further, the structure of each lamella alignment mark of described at least two lamellas and/or size identical.
Further, the structure of each described lamella alignment mark of described at least two lamellas is identical with size, and described same basal layer alignment mark comprises at least one son identical with size with the structure of each lamella alignment mark of described at least two lamellas and marks.
Further, described same basal layer alignment mark comprises four first son marks, and each first son mark lays respectively on four angles of rectangle frame, and layout area is the region that rectangle frame surrounds.
Further, the first son mark comprises cross shape marks, rectangular block formula mark, rectangle frame mark or grizzly bar group formula mark.
Further, each lamella alignment mark of described at least two lamellas is identical with the structure that the first son marks and/or size.
Further, described same basal layer alignment mark comprises the second son mark, and the second son mark comprises mutually disjoint four the rectangle marked bars surrounding rectangle frame.
Further, rectangle marked bar is rectangular block formula slug, rectangle frame slug or grizzly bar group formula slug.
Further, in an aligned state, the crossing intersection point of the second imaginary line that the first imaginary lines extended along first direction by many in projection and many edges extend perpendicular to the second direction of first direction forms array, and each first imaginary line is uniformly distributed and/or each second imaginary line is uniformly distributed, each lamella alignment mark arrangement of wherein said at least two lamellas is: the center of each lamella alignment mark overlaps with the intersection point of in array.
Further, in an aligned state, the center of described same basal layer alignment mark overlaps with the intersection point of in array.
Further, described same basal layer alignment mark comprises at least one first son mark, and in an aligned state, the intersection point that in projection, the center of each first son mark is corresponding to array respectively overlaps.
Further, in an aligned state, in projection each first son mark lay respectively at described at least two lamellas each lamella alignment mark shared by the outside in region.
Further, described same basal layer alignment mark comprises four first son marks, in an aligned state, four intersection points of center superposition marked with four first sons in projection are formed by two the first imaginary lines and two the second imaginary lines, and each lamella alignment mark of described at least two lamellas is positioned at the rectangular area that two the first imaginary lines and two the second imaginary lines surround.
Further, each intersection point in rectangular area becomes M × N matrix form to arrange, wherein, M be more than or equal to 2 natural number, N be more than or equal to 1 natural number, and M is more than or equal to N, and the quantity of lamella alignment mark is greater than (M-1) × N number of.
Further, described same basal layer comprises multiple Dai Zhi district, described same basal layer alignment mark is between two adjacent Dai Zhi districts, basal layer alignment mark comprises two self-alignment structures, first in two self-alignment structures is formed with the pattern in the Ge Daizhi district in adjacent Dai Zhi district simultaneously, second in two self-alignment structures is formed with the pattern in another Dai Zhi district in adjacent Dai Zhi district after first self-alignment structure is formed simultaneously, and Liang Gedaizhi district realizes aiming at by the relative position of two self-alignment structures.
Further, two self-alignment structures are identical or different.
Further, same described in two described same basal layer alignment marks of self-alignment structure composition, described same basal layer alignment mark is relative to all symmetrical axially symmetric structure of orthogonal two axles.
Further, two self-alignment structures are identical, and two self-alignment structures surround rectangle frame, wherein, on two frames that each self-alignment structure is positioned at rectangle frame and/or each self-alignment structure be positioned on two angles of rectangle frame.
Further, two self-alignment structure differences, two self-alignment structures surround rectangle frame, and wherein, a self-alignment structure is positioned on four angles of rectangle frame, and another self-alignment structure is positioned on the four edges frame of rectangle frame.
The second aspect of the application provides a kind of substrate, and substrate comprises basal layer and is arranged at the multiple lamellas on basal layer, wherein, and the overlapping alignment mark any one of substrate also comprises according to a first aspect of the present invention.
Mark according to the overlapping alignment of the application and there is the substrate of this overlapping alignment mark, each routine monitoring figure is given overall consideration to, multiple lamella alignment mark can simultaneously measured equipment Inspection relative to same basal layer alignment mark, therefore, can with the alignment error of each layer of same basal layer alignment mark detection relative to basal layer, thus, the overlapping alignment of layout the application is only needed to mark at each measuring point, lamination can be realized aim at and measuring lamination, therefore, under the overlapping alignment label placement mode of the application, the region of more marked region as marking groove is released, save overlapping alignment and mark the marked region taken.Further, when above overlapping alignment mark is arranged on the wafer of production semiconductor, can be used to by the marked region saved the verification pattern that other necessity is set, thus be beneficial to control and the development of little live width technique.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the layout plan of overlapping alignment mark in prior art;
Fig. 2 is the structure chart of the overlapping alignment mark of box-like formula in box in prior art;
Fig. 3 is the structure chart of the overlapping alignment mark of strips in prior art discal patch;
Fig. 4 is the structure chart of the overlapping alignment mark of grizzly bar form in prior art;
Fig. 5 is the plan structure schematic diagram of the overlapping alignment mark of the application first embodiment;
Fig. 6 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application first embodiment;
Fig. 7 is the plan structure schematic diagram of the first son mark of basal layer alignment mark in the overlapping alignment mark of the application first embodiment;
Fig. 8 is that the autoregistration in each Dai Zhi district of active region layer in the application first embodiment marks the plan structure schematic diagram overlooking layout;
Fig. 9 is the plan structure schematic diagram of the autoregistration label placement in multiple Dai Zhi districts of active region layer in the application first embodiment;
Figure 10 is the plan structure schematic diagram of the overlapping alignment mark of the application second embodiment;
Figure 11 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application second embodiment;
Figure 12 is the plan structure schematic diagram of the autoregistration label placement in each Dai Zhi district of active region layer in the application second embodiment;
Figure 13 is the plan structure schematic diagram of the autoregistration label placement in multiple Dai Zhi districts of active region layer in the application second embodiment;
Figure 14 is the plan structure schematic diagram of the overlapping alignment mark of the application the 3rd embodiment;
Figure 15 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application the 3rd embodiment.
Embodiment
Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
In addition, in this application, technical term " multiple " refers to " two or more ".
Introduce as background technology, the arrangement that prior art exists overlapping alignment mark is difficult to the technical problem of the layout demand of satisfied increasing figure.For solving this technical problem, substrate arranges the overlapping alignment mark of the application.Wherein substrate comprises basal layer and is arranged at the multiple lamellas on basal layer.Overlapping alignment mark comprises basal layer alignment mark and lamella alignment mark.Basal layer alignment mark is arranged on the marked region of basal layer.Each lamella alignment mark is arranged on corresponding lamella, wherein, to be provided with in each lamella of lamella alignment mark at least two lamellas and to be realized and the aiming at of basal layer by the position relationship between corresponding lamella alignment mark and same basal layer alignment mark.
Under the overlapping alignment label placement mode of the application, the region of more marked region as marking groove is released, and has saved overlapping alignment and has marked the marked region taken.Further, when above overlapping alignment mark is arranged on the wafer of production semiconductor, can be used to by the marked region saved the verification pattern that other necessity is set, thus be beneficial to control and the development of little live width technique.
Below with reference to first shown in Fig. 5 to Figure 15 to the 3rd embodiment, further illustrate the overlapping alignment mark of the application for wafer process in production process of semiconductor.In the first to the 3rd embodiment, wafer is corresponding with substrate, and active region layer is corresponding with basal layer, and polycrystalline gate layer, each wafer layer such as aperture layer, metal level and via layer that go between are corresponding with lamella.
Fig. 5 is the plan structure schematic diagram of the overlapping alignment mark of the application first embodiment; Fig. 6 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application first embodiment; Fig. 7 is the plan structure schematic diagram of the first son mark of basal layer alignment mark in the overlapping alignment mark of the application first embodiment; Fig. 8 is that the autoregistration in each Dai Zhi district of active region layer in the application first embodiment marks the plan structure schematic diagram overlooking layout; Fig. 9 is the plan structure schematic diagram of the autoregistration label placement in multiple Dai Zhi districts of active region layer in the application first embodiment.
In this application, " plan structure schematic diagram " refers to and carries out observing obtained structural representation from the direction perpendicular to wafer.In other words, " plan structure schematic diagram " namely refers to the structural representation in the projection of corresponding construction in the plane being parallel to substrate.
As shown in Figure 5, the overlapping alignment mark 100 of the first embodiment comprises basal layer alignment mark 110 and multiple lamella alignment mark.
Basal layer alignment mark 110 is arranged on the marked region of the active region layer of wafer.This marked region can be fringe region or the marking groove of wafer.Basal layer alignment mark 110 is positioned at the aligning of each wafer layer such as polycrystalline gate layer, lead-in wire aperture layer, metal level and via layer on active region layer relative to active region layer for realizing.
In each lamella alignment mark, each lamella alignment mark is arranged in a corresponding wafer layer.Wherein, each lamella alignment mark is set to: under the alignment that each wafer layer is all aimed at active region layer, in the projection of the basal layer alignment mark in the plane being parallel to wafer and each lamella alignment mark, each lamella alignment mark is all zero lap ground settings each other.See Fig. 5, in this projection, each lamella alignment mark is all positioned at a layout area limited by basal layer alignment mark.
As shown in Figure 5, basal layer alignment mark 110 is rectangle frame structure on the whole.Basal layer alignment mark 110 comprises four first son marks 111 and one second son mark 112.Wherein, each first son mark 111 is decussate texture.Second son mark 112 comprises four the rectangle marked bars surrounding rectangle frame, and four rectangle marked bars mutually disjoint.Wherein four first son marks 111 lay respectively on four angles of rectangle frame.
In a first embodiment, each lamella alignment mark all concentrates on the inside of this rectangle frame, thus the interior zone of this rectangle frame becomes the layout area of each lamella alignment mark.
In a first embodiment, overlapping alignment mark comprises nine lamella alignment marks.Exemplarily indicate the lamella alignment mark 133 of lead-in wire the lamella alignment mark 131 of aperture layer, the lamella alignment mark 132 of polycrystalline gate layer and the first metal layer in Figure 5.Remaining lamella alignment mark is the lamella alignment mark be positioned in all the other wafer layer, the lamella alignment mark of such as via layer, lamella alignment mark of the second metal level etc.
In an aligned state, a lamella alignment mark in aforementioned projection in each lamella alignment mark can overlap with the center of basal layer alignment mark.As shown in Figure 5, the center being positioned at a middle lamella alignment mark in nine lamella alignment marks namely with the center superposition of basal layer alignment mark 110.Certainly, in other unshowned embodiments, in an aligned state, also can all arrange at interval between the center of each lamella alignment mark and the center of basal layer alignment mark in aforementioned projection, such as, in a variant embodiment of the first embodiment, if only need eight lamella alignment marks, then the aforesaid lamella alignment mark being positioned at centre can be arranged.
The structure of each lamella alignment mark is preferably identical with size.Basal layer alignment mark also can comprise at least one mark identical with size with the structure of lamella alignment mark.In a first embodiment, structure and the size of each lamella alignment mark structure that all marks 111 with the first son of basal layer alignment mark 110 is identical with size.This is provided with to be beneficial to and carries out measuring and aiming at.
Preferably, in an aligned state, the crossing intersection point of the second imaginary line that the first imaginary lines extended along first direction by many in aforementioned projection and many edges extend perpendicular to the second direction of first direction forms array, and each first imaginary line is uniformly distributed and/or each second imaginary line is uniformly distributed.Wherein the center of each lamella alignment mark overlaps with the intersection point of in this array.The direction of each lamella alignment mark on aforementioned projection is all consistent, and each lamella alignment mark is consistent with the direction that each first son marks.Under described alignment, in aforementioned projection, the center of overlapping alignment mark overlaps with the intersection point of in array.In an aligned state, the intersection point that in aforementioned projection, the center of each first son mark is also corresponding to described array respectively overlaps.As shown in Figure 5, in the first embodiment, namely each lamella alignment mark is arranged by this rule.So be provided with to be beneficial to and carry out measuring and aiming at.
In an aligned state, in aforementioned projection, each first son mark 111 lays respectively at the outside in region shared by each lamella alignment mark.As shown in Figure 5, in first embodiment, the intersection points mark center superposition of 111 with four first of basal layer alignment mark 110 sons form rectangular area by two the first imaginary lines and two the second imaginary lines, and each lamella alignment mark is all positioned at the inside, rectangular area that these two first imaginary lines and two the second imaginary lines surround.
As shown in Figure 5, each intersection point in above rectangular area becomes M × N matrix form to arrange, wherein, M be more than or equal to 2 natural number, N is the natural number being more than or equal to 1, and M is more than or equal to N, and the quantity of lamella alignment mark is greater than (M-1) × N number of.Such layout is to arrange required lamella alignment mark in region little as far as possible, is conducive to reducing the region of overlapping alignment mark shared by 100.Each intersection point in first embodiment in rectangular area becomes 3 × 3 matrix form arrangements, and each point of intersection all arranges a lamella alignment mark.
As shown in Figure 6, the first son mark 111 is decussate texture on the whole.Further combined with Fig. 7, the first son mark 111 comprise the rectangular block 111A that is positioned at decussate texture center and from the four edges of rectangular block 111A up and down, left and right four direction extends and four rectangular strips 111Bs spaced with rectangular block 111A respectively.The size of this first son mark 111 can make corresponding to the size of semiconductor device to be made.Such as in a first embodiment, rectangular block 111A is of a size of 0.2 micron × 0.2 micron, and rectangular strips 111B is of a size of 0.2 micron × 1.0 microns, and the rectangular strips 111B size of space of rectangular block 111A is 0.2 micron.
In a first embodiment, the size forming each rectangle marked bar of the second son mark 112 is set to 8.2 microns × 2.6 microns.Like this, the Region control of the overlapping alignment of the first embodiment mark shared by 100 at 14.2 microns × 14.2 microns, thus has saved the marked region shared by overlapping alignment mark of each measuring point on wafer.
In semiconductor fabrication processes, a wafer often to be divided into multiple Dai Zhi district, adopt the mode of multiple exposure to form the pattern in Ge Daizhi district, also need between the pattern of previous exposure and rear exposure to aim at.The overlapping alignment mark of the first embodiment can also realize autoregistration at active region layer.
See Fig. 8 and Fig. 9, in first embodiment, active region layer comprises multiple Dai Zhi district 200, basal layer alignment mark 110 is between two adjacent Dai Zhi districts 200, and basal layer alignment mark 110 comprises two self-alignment structures---self-alignment structure 110A and self-alignment structure 110B.First in two self-alignment structures is formed with the pattern in the Ge Daizhi district 200 in adjacent Dai Zhi district 200 simultaneously, second in two self-alignment structures is formed with the pattern in another Dai Zhi district 200 in adjacent Dai Zhi district 200 after first self-alignment structure is formed simultaneously, and Liang Gedaizhi district 200 realizes aiming at by the relative position of two self-alignment structures.
Two self-alignment structures can divide identical also can be different.As shown in Figure 8 and Figure 9, in a first embodiment, two self-alignment structures are identical, and just arranged direction is different.Wherein, each self-alignment structure includes two rectangle marked bars adjacent in two first son marks 111 and the second son mark 112, and one of them rectangle marked bar is between two first son marks 111.Two self-alignment structure composition basal layer alignment marks 110, basal layer alignment mark 110 is formed as relative to all symmetrical axially symmetric structure of orthogonal two axles.In a first embodiment, two self-alignment structures surround rectangle frame, and wherein, two rectangle marked bars in each self-alignment structure in the second son mark 112 are positioned on two frames of rectangle frame, and two first son marks 111 are positioned on two angles of rectangle frame.
But the dividing mode of above self-alignment structure can change, as long as the self aligned dividing mode in two adjacent Dai Zhi districts can be realized.Such as, the basal layer alignment mark of above first embodiment can also be divided into two different self-alignment structures.Such as, first self-alignment structure is four first son marks, 111, second self-alignment structure is the second son mark 112, and after double exposure, two self-alignment structures can form the basal layer alignment mark 110 shown in Fig. 8 equally.
In above first embodiment, basal layer alignment mark and lamella alignment mark all can have various change, such as, basal layer alignment mark only can comprise four first son marks, and do not comprise the second son mark, or basal layer alignment mark only can comprise the second son mark and not comprise four first son marks, or basal layer alignment mark can comprise the first son mark and the second son mark, but the quantity that the first son marks can not be four simultaneously, as can be one, two etc.In addition, the first son mark and lamella alignment mark can not be decussate texture, can also mark, rectangle frame marks or grizzly bar group formula marks for rectangular block formula.Even if be cross, may not be the decussate texture shown in Fig. 7, but cross hair shape, the middle cross etc. without rectangular block.And the second son mark also can change, as in a first embodiment, each slug of composition second mark is rectangular block formula slug, but each slug also can be the slug of the form such as rectangle frame slug or grizzly bar group formula slug.In addition, each lamella alignment mark each other and each lamella alignment mark from first son mark between structure and size also can be different.
Second embodiment and the 3rd embodiment only illustrate that these change by way of example below.
Figure 10 is the plan structure schematic diagram of the overlapping alignment mark of the application second embodiment; Figure 11 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application second embodiment; Figure 12 is the plan structure schematic diagram of the autoregistration label placement in each Dai Zhi district of active region layer in the application second embodiment; Figure 13 is the plan structure schematic diagram of the autoregistration label placement in multiple Dai Zhi districts of active region layer in the application second embodiment.
As shown in Figure 10 to 13, overlapping alignment mark 300 in second embodiment marks compared with in the of 100 with the overlapping alignment in the first embodiment, only include four cross shape marks 311 be centrally located on four angles of a rectangle to mark as son, and do not comprise other son mark.In this second embodiment, each cross shape marks 311 be centrally located on four angles of a rectangle 320, the layout area of each lamella alignment mark is positioned at the region that rectangle 320 surrounds.Each cross shape marks 311 towards identical.Only identify the lamella alignment mark 333 of the lead-in wire lamella alignment mark 331 of aperture layer, the lamella alignment mark 332 of polycrystalline gate layer and the first metal layer in Figure 10, remaining lamella alignment mark is the lamella alignment mark be positioned on all the other lamellas.
As shown in Figure 12 and Figure 13, the overlapping alignment mark of the second embodiment also can be divided into two self-alignment structure 310A and 310B, and adjacent Liang Gedaizhi district 200 realizes autoregistration by two self-alignment structure 310A and 310B.In a second embodiment, with adjacent two decussate textures as a self-alignment structure, two self-alignment structures form the basal layer alignment mark 310 shown in Figure 11.Certainly, the dividing mode of above self-alignment structure neither be unique.Such as, in a variant embodiment of the second embodiment, can also using the decussate texture of two on diagonal 311 as a self-alignment structure.
In second embodiment, other unaccounted content can with reference to the related content of the first embodiment.
Figure 14 is the plan structure schematic diagram of the overlapping alignment mark of the application the 3rd embodiment; Figure 15 is the plan structure schematic diagram of the basal layer alignment mark of the overlapping alignment mark of the application the 3rd embodiment.
As shown in Figure 14 and Figure 15, the difference of the 3rd embodiment and the first embodiment is, the son marking 511 forms with all disjunct square frame-shaped of each frame marks the first son mark 111 that instead of the first embodiment.See Figure 14 and Figure 15, overlapping alignment mark 500 comprises basal layer alignment mark 510 and multiple lamella alignment mark 531,532,533 etc.Basal layer alignment mark 510 comprises four square frame-shaped marks 511 and a rectangle frame mark 512, and each square frame-shaped mark 511 and rectangle frame mark 512 surround a rectangle frame.The structure that each lamella alignment mark all marks 511 with square frame-shaped is identical with size.Further, each lamella alignment mark structure is positioned at the rectangle frame inside at basal layer alignment mark 510 place in the form of an array.
In 3rd embodiment, other unaccounted part with reference to the related content of the first embodiment, can not repeat them here.Such as, the 3rd embodiment also can realize the autoregistration in the adjacent Dai Zhi district of active region layer.
The set-up mode of the overlapping alignment mark of each embodiment has the alignment mark size and design rule determined to all lamellas above, when the position of layer alignment mark and front layer alignment mark is designed by difference by design rule in technical process, thus the alignment mark of all layers of substrate is concentrated in a less region, more marked region is released.In principle, the overlapping alignment of each measuring point marks the region taken and can control in the regional extent of the length and width of 10 to 50 microns.Thus the application can provide a kind of overlapping alignment mark saving the marked region that each measuring point takies with simple technique and lower input.
And in semiconductor fabrication processes, when the overlapping alignment of above each embodiment is marked at the detection of photoetching process aligning, the Ge Daizhi district be positioned on active region layer can realize autoregistration by basal layer alignment mark.Thus for each measuring point, for including source region layer at interior all wafers layer, only needing layout one group of alignment mark can realize autoregistration, multilayer is aimed at and measuring lamination.
In addition, the set-up mode of the overlapping alignment of above embodiment mark can detect the position mark of each lamella simultaneously, can be implemented between all layers to locating tab assembly, thus can Measuring Time be shortened, improve and measure efficiency, improve the output of product.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (22)
1. an overlapping alignment mark, described overlapping alignment mark is arranged on substrate, and described substrate comprises basal layer and is arranged at the multiple lamellas on described basal layer, it is characterized in that, described overlapping alignment mark comprises:
Basal layer alignment mark, described basal layer alignment mark is arranged on the marked region of described basal layer;
Lamella alignment mark, each described lamella alignment mark is arranged on corresponding described lamella, wherein, to be provided with in each described lamella of described lamella alignment mark at least two lamellas to be realized and the aiming at of described basal layer by the position relationship between corresponding described lamella alignment mark and same basal layer alignment mark.
2. overlapping alignment mark according to claim 1, it is characterized in that, each described lamella alignment mark is set to: under the alignment that each described lamella being provided with described lamella alignment mark is all aimed at described basal layer, in the projection of the described overlapping alignment mark in the plane being parallel to described substrate, each described lamella alignment mark all zero lap ground settings each other of described at least two lamellas.
3. overlapping alignment mark according to claim 2, it is characterized in that, the each described lamella alignment mark of described at least two lamellas is set to: under described alignment, and described in described projection, each described lamella alignment mark of at least two lamellas is all positioned at the layout area limited by described same basal layer alignment mark.
4. overlapping alignment mark according to claim 1, it is characterized in that, structure and/or the size of each described lamella alignment mark of described at least two lamellas are identical.
5. overlapping alignment mark according to claim 4, it is characterized in that, the structure of each described lamella alignment mark of described at least two lamellas is identical with size, and described same basal layer alignment mark comprises at least one son identical with size with the structure of each described lamella alignment mark of described at least two lamellas and marks.
6. overlapping alignment mark according to claim 3, it is characterized in that, described same basal layer alignment mark comprises four first son marks, and each described first son mark lays respectively on four angles of rectangle frame, and described layout area is the region that described rectangle frame surrounds.
7. overlapping alignment mark according to claim 6, is characterized in that, described first son mark comprises cross shape marks, rectangular block formula mark, rectangle frame mark or grizzly bar group formula mark.
8. overlapping alignment mark according to claim 6, is characterized in that, each described lamella alignment mark of described at least two lamellas is identical with the structure that described first son marks and/or size.
9. overlapping alignment mark according to claim 6, is characterized in that, described same basal layer alignment mark comprises the second son mark, and described second son mark comprises mutually disjoint four the rectangle marked bars surrounding described rectangle frame.
10. overlapping alignment mark according to claim 9, it is characterized in that, described rectangle marked bar is rectangular block formula slug, rectangle frame slug or grizzly bar group formula slug.
11. overlapping alignment marks according to claim 2, it is characterized in that, under described alignment, the crossing intersection point of the second imaginary line that the first imaginary lines extended along first direction by many in described projection and many edges extend perpendicular to the second direction of described first direction forms array, and each described first imaginary line is uniformly distributed and/or each described second imaginary line is uniformly distributed, each described lamella alignment mark arrangement of wherein said at least two lamellas is: the center of each described lamella alignment mark overlaps with the intersection point of in described array.
12. overlapping alignment marks according to claim 11, it is characterized in that, under described alignment, the center of described same basal layer alignment mark overlaps with the intersection point of in described array.
13. overlapping alignment marks according to claim 11, it is characterized in that, described same basal layer alignment mark comprises at least one first son mark, and under described alignment, the intersection point that in described projection, the center of each described first son mark is corresponding to described array respectively overlaps.
14. overlapping alignment according to claim 13 marks, is characterized in that, under described alignment, in described projection each described first son mark lay respectively at described at least two lamellas each described lamella alignment mark shared by the outside in region.
15. overlapping alignment marks according to claim 14, it is characterized in that, described same basal layer alignment mark comprises four described first son marks, under described alignment, four described intersection points of center superposition that in described projection, described first son marks with four are formed by two described first imaginary lines and two described second imaginary lines, and each described lamella alignment mark of described at least two lamellas is positioned at the rectangular area that described two the first imaginary lines and described two the second imaginary lines surround.
16. overlapping alignment marks according to claim 15, it is characterized in that, each described intersection point in described rectangular area becomes M × N matrix form to arrange, wherein, M be more than or equal to 2 natural number, N be more than or equal to 1 natural number, and M is more than or equal to N, and the quantity of described lamella alignment mark is greater than (M-1) × N number of.
17. according to any one of claim 1 to 16 overlapping alignment mark, it is characterized in that, described basal layer comprises multiple Dai Zhi district, described same basal layer alignment mark is between two adjacent described Dai Zhi districts, described same basal layer alignment mark comprises two self-alignment structures, first in two described self-alignment structures is formed with the pattern in the Ge Daizhi district in described adjacent Dai Zhi district simultaneously, second in two described self-alignment structures is formed with the pattern in another Dai Zhi district in described adjacent Dai Zhi district after first described self-alignment structure is formed simultaneously, described Liang Gedaizhi district realizes aiming at by the relative position of described two self-alignment structures.
18. overlapping alignment marks according to claim 17, it is characterized in that, described two self-alignment structures are identical or different.
19. overlapping alignment marks according to claim 18, it is characterized in that, the described same basal layer alignment mark of described two self-alignment structures composition, described same basal layer alignment mark is relative to all symmetrical axially symmetric structure of orthogonal two axles.
20. overlapping alignment marks according to claim 19, it is characterized in that, described two self-alignment structures are identical, described two self-alignment structures surround rectangle frame, wherein, each described self-alignment structure be positioned at described rectangle frame two frames on and/or each described self-alignment structure be positioned on two angles of described rectangle frame.
21. overlapping alignment marks according to claim 19, it is characterized in that, described two self-alignment structure differences, described two self-alignment structures surround rectangle frame, wherein, a described self-alignment structure is positioned on four angles of described rectangle frame, and self-alignment structure described in another is positioned on the four edges frame of described rectangle frame.
22. 1 kinds of substrates, described substrate comprises basal layer and is arranged at the multiple lamellas on described basal layer, it is characterized in that, described substrate also comprises the overlapping alignment mark according to any one of claim 1 to 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410100759.7A CN104934413B (en) | 2014-03-18 | 2014-03-18 | Overlapping alignment marks and the substrate with overlapping alignment mark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410100759.7A CN104934413B (en) | 2014-03-18 | 2014-03-18 | Overlapping alignment marks and the substrate with overlapping alignment mark |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104934413A true CN104934413A (en) | 2015-09-23 |
| CN104934413B CN104934413B (en) | 2018-03-23 |
Family
ID=54121509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410100759.7A Active CN104934413B (en) | 2014-03-18 | 2014-03-18 | Overlapping alignment marks and the substrate with overlapping alignment mark |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934413B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108089770A (en) * | 2018-02-09 | 2018-05-29 | 合肥鑫晟光电科技有限公司 | Touch-screen mother matrix and preparation method thereof, touch-screen and display touch device |
| CN109983567A (en) * | 2019-02-13 | 2019-07-05 | 长江存储科技有限责任公司 | Label for registration pattern in semiconductor fabrication |
| CN111933618A (en) * | 2020-08-13 | 2020-11-13 | 武汉新芯集成电路制造有限公司 | Wafer assembly with alignment mark, forming method thereof and wafer alignment method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733690A (en) * | 1995-10-05 | 1998-03-31 | Samsung Electronics Co., Ltd. | Reticle for fabricating semiconductor device |
| TW200729451A (en) * | 2006-01-26 | 2007-08-01 | Nanya Technology Corp | An alignment structure |
| US20110097692A1 (en) * | 2009-04-17 | 2011-04-28 | Homan Joseph B | Business Risk Training Game |
| CN201897692U (en) * | 2010-10-16 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Masking plate with alignment marks |
-
2014
- 2014-03-18 CN CN201410100759.7A patent/CN104934413B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733690A (en) * | 1995-10-05 | 1998-03-31 | Samsung Electronics Co., Ltd. | Reticle for fabricating semiconductor device |
| TW200729451A (en) * | 2006-01-26 | 2007-08-01 | Nanya Technology Corp | An alignment structure |
| US20110097692A1 (en) * | 2009-04-17 | 2011-04-28 | Homan Joseph B | Business Risk Training Game |
| CN201897692U (en) * | 2010-10-16 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Masking plate with alignment marks |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108089770A (en) * | 2018-02-09 | 2018-05-29 | 合肥鑫晟光电科技有限公司 | Touch-screen mother matrix and preparation method thereof, touch-screen and display touch device |
| CN109983567A (en) * | 2019-02-13 | 2019-07-05 | 长江存储科技有限责任公司 | Label for registration pattern in semiconductor fabrication |
| US10811363B2 (en) | 2019-02-13 | 2020-10-20 | Yangtze Memory Technologies Co., Ltd. | Marks for locating patterns in semiconductor fabrication |
| CN111933618A (en) * | 2020-08-13 | 2020-11-13 | 武汉新芯集成电路制造有限公司 | Wafer assembly with alignment mark, forming method thereof and wafer alignment method |
| CN111933618B (en) * | 2020-08-13 | 2022-01-28 | 武汉新芯集成电路制造有限公司 | Wafer assembly with alignment mark, forming method thereof and wafer alignment method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104934413B (en) | 2018-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9316925B2 (en) | Methods for monitoring source symmetry of photolithography systems | |
| US9123649B1 (en) | Fit-to-pitch overlay measurement targets | |
| US20210018851A1 (en) | Overlay measurement structures and method of overlay errors | |
| US7692319B2 (en) | Efficient provision of alignment marks on semiconductor wafer | |
| CN102156392A (en) | Device and method for detecting alignment parameter of photoetching machine | |
| CN109828440B (en) | Overlay mark based on diffraction and overlay error measuring method | |
| US7933015B2 (en) | Mark for alignment and overlay, mask having the same, and method of using the same | |
| US20210296392A1 (en) | Flat Panel Array with the Alignment Marks in Active Area | |
| KR100874922B1 (en) | Overlay mark of semiconductor device and semiconductor device including the overlay mark | |
| US9646896B2 (en) | Lithographic overlay sampling | |
| CN102466977B (en) | Mark structure used for measuring distortion of projection object lens and its method | |
| TW201640228A (en) | Overlay mark pattern and method of correcting overlay error | |
| CN106154741B (en) | Mask plate, defocus testing method and defocus testing system | |
| CN112015061A (en) | Overlay precision measurement mark and use method thereof | |
| CN104934413A (en) | Overlapping alignment mark and substrate with the same | |
| CN111766764A (en) | Overlay precision measurement mark and use method thereof | |
| CN111443570B (en) | Photomask, semiconductor device and design method of photomask | |
| US9653404B1 (en) | Overlay target for optically measuring overlay alignment of layers formed on semiconductor wafer | |
| CN114167694A (en) | Combined overlay mark and method for measuring overlay error by using overlay mark | |
| CN112034677A (en) | Overlay mark, overlay mark method and overlay measuring method | |
| CN106154739A (en) | Mask plate and the determination methods of focal shift | |
| CN105607308B (en) | A kind of surveyors' staff and manufacturing method and application method | |
| US7136520B2 (en) | Method of checking alignment accuracy of patterns on stacked semiconductor layers | |
| CN111508825B (en) | Device offset monitoring method, semiconductor device and manufacturing method thereof | |
| CN105446090A (en) | Alignment measurement method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |