CN114167694A - Combined overlay mark and method for measuring overlay error by using overlay mark - Google Patents
Combined overlay mark and method for measuring overlay error by using overlay mark Download PDFInfo
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- CN114167694A CN114167694A CN202010948697.0A CN202010948697A CN114167694A CN 114167694 A CN114167694 A CN 114167694A CN 202010948697 A CN202010948697 A CN 202010948697A CN 114167694 A CN114167694 A CN 114167694A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Engineering & Computer Science (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The present disclosure provides a combined overlay mark, a method for measuring overlay error using the overlay mark, the overlay mark comprising a current layer comparison mark and a previous layer reference mark. When the layer comparison mark includes a first comparison mark and a second comparison mark formed around the first comparison mark, the front layer reference mark includes a first reference mark and a second reference mark formed around the first reference mark. The first comparison mark and the first reference mark may be vertically provided in correspondence, and the second comparison mark and the second reference mark may be vertically provided in correspondence. The measuring method comprises the following steps: and measuring a first alignment error by using the first comparison mark and the first reference mark, measuring a second alignment error by using the second comparison mark and the second reference mark, and determining an error measurement result according to the first alignment error and/or the second alignment error. The method improves the measurement reliability of the overlay error through the combined two overlay marks, and effectively improves the measurement precision of the overlay error on the premise of ensuring the measurement precision.
Description
Technical Field
The present disclosure relates to the field of overlay error measurement technologies, and more particularly, to a combined overlay mark and a method for measuring an overlay error using the same.
Background
The photolithography process is a key process in the semiconductor device fabrication process. In the whole processing process of the semiconductor device, the whole manufacturing process can be completed through multi-layer photoetching, and when the layer pattern and the front layer pattern need to be aligned, namely, the overlay error (namely, the offset between the upper layer pattern and the lower layer pattern) needs to meet the requirement, the position and the connection relation between the device layers are ensured to meet the design requirement. The large overlay error is one of the main reasons for the influence on the yield of the device. Although the conventional scheme can also measure the overlay error, the reliability of the conventional scheme is often low, and the production cost of the semiconductor device is increased. Therefore, how to improve the reliability of overlay error measurement becomes the focus of research.
Disclosure of Invention
In order to solve the problems of low reliability, increased device cost and the like of the existing overlay error measurement, the disclosure provides a combined overlay mark and a method for measuring the overlay error by using the overlay mark.
To achieve the above technical objects, the present disclosure can specifically provide a combined overlay mark, which may include a current layer comparison mark and a previous layer reference mark. When the layer comparison mark includes a first comparison mark and a second comparison mark formed around the first comparison mark. The front layer reference mark includes a first reference mark and a second reference mark formed around the first reference mark.
The first comparison mark and the first reference mark may be vertically disposed in correspondence, and the second comparison mark and the second reference mark may be vertically disposed in correspondence. As a preferred technical solution, in the present disclosure, the first comparison mark and the first reference mark are both diffraction-based overlay marks, and in the present disclosure, the second comparison mark and the second reference mark are both image-based overlay marks.
To achieve the above technical object, the present disclosure further provides a method for measuring an overlay error using an overlay mark according to any one of the embodiments of the present disclosure. The overlay error measurement method includes, but is not limited to, the following steps: and measuring a first alignment error by using the first comparison mark and the first reference mark, measuring a second alignment error by using the second comparison mark and the second reference mark, and determining an error measurement result according to the first alignment error and/or the second alignment error.
The beneficial effect of this disclosure does: the reliability of overlay error measurement can be greatly improved through two kinds of overlay marks after combination, even under the condition that the measurement accuracy is obviously reduced after the DBO measurement mode is influenced by factors such as environment, the overlay error can be quickly and accurately obtained through the IBO measurement mode, and therefore the measurement efficiency of the overlay error can be effectively improved on the premise that the measurement accuracy is guaranteed.
The technical scheme provided by the disclosure can comprehensively obtain two measurement results in the actual alignment error measurement process or select any one of two measurement modes, so that the required alignment error measurement result can be obtained under the complex condition, and the photoetching process of the device meets the design requirement.
Compared with the prior art, the method has the outstanding advantages of higher reliability, higher practicability, contribution to obviously reducing the processing cost of the device and the like.
Drawings
Fig. 1 is a schematic plan view illustrating a combined overlay mark according to a first embodiment of the disclosure.
Fig. 2 is a schematic plan view illustrating a combined overlay mark according to a second embodiment of the disclosure.
Fig. 3 is a schematic plan view illustrating a combined overlay mark according to a third embodiment of the present disclosure.
Fig. 4 shows a schematic diagram of a diffraction-based overlay error measurement.
Fig. 5 shows a schematic plan view of the x-axis reference mark and the x-axis comparison mark.
Fig. 6 shows a schematic plan view of the y-axis reference mark and the y-axis comparison mark.
In the figure, the position of the upper end of the main shaft,
100. a first fiducial marker.
101. First comparison flag.
200. A second fiducial marker.
201. A second comparison marker.
300. And x-axis reference marks.
301. The x-axis compares the labels.
400. And a y-axis reference mark.
401. The y-axis compares the labels.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The first embodiment is as follows:
as shown in fig. 1 to 3, the present embodiment can provide a combined overlay mark for measuring an overlay error (overlay error), the combined overlay mark including a current layer comparison mark and a previous layer reference mark. The pre-layer fiducial mark is often disposed on a previously formed semiconductor device layer, while the layer comparison mark is often disposed on a later formed semiconductor device layer, and the layer comparison mark is typically disposed above the pre-layer fiducial mark.
As shown in fig. 1, the layer reference mark may include a first reference mark 101 and a second reference mark 201 formed around the first reference mark 101, and the front layer reference mark includes a first reference mark 100 and a second reference mark 200 formed around the first reference mark 100. In the semiconductor device layer, the first comparison mark 101 is provided in a vertical correspondence with the first reference mark 100, and the second comparison mark 201 is provided in a vertical correspondence with the second reference mark 200.
IN this embodiment, the first comparison mark 101 and the first fiducial mark 100 are both Diffraction-Based Overlay marks (DBO), and the second comparison mark 201 and the second fiducial mark 200 are both image-Based Overlay marks (IBO), so that this embodiment can provide a combined Overlay mark combining an IBO Overlay mark and a DBO Overlay mark, and the IBO Overlay mark may use, for example, a BOX IN BOX (BOX IN BOX) pattern or a BAR IN BAR (BAR IN BAR) pattern.
As shown in fig. 4, the first fiducial marker 100 in this embodiment may include a fiducial grating. The reference grating comprises a plurality of strip-shaped areas which are parallel to each other and a concave area which is positioned between the adjacent strip-shaped areas. The first comparison mark 101 includes a comparison grating disposed above the reference grating, and the comparison grating may have the same structure as the reference grating; for example, the distribution direction, the extending direction, the number of stripe regions, the width of recessed regions, and other features of the comparison grating and the reference grating may be the same, or of course, the width of recessed regions and other features may be different.
As shown in fig. 5 and 6, the second comparison mark 201 may include an x-axis comparison mark 301 for measuring an overlay error in a first direction and a y-axis comparison mark 401 for measuring an overlay error in a second direction, and the second reference mark 200 includes an x-axis reference mark 300 and a y-axis reference mark 400, wherein the x-axis comparison mark 301 is disposed above and below the x-axis reference mark 300 in one-to-one correspondence, the overlay error in the first direction may be measured by the x-axis comparison mark 301 and the x-axis reference mark 300, the y-axis comparison mark 401 is disposed above and below the y-axis reference mark 400 in one-to-one correspondence, the first direction is perpendicular to the second direction, and the overlay error in the second direction may be measured by the y-axis comparison mark 401 and the y-axis reference mark 400. More specifically, the second comparison mark 201 includes a plurality of equally spaced line patterns parallel to each other, and the second reference mark 200 and the second comparison mark 201 may have identical patterns. In this embodiment, the first comparison mark 101 and the second comparison mark 201 may be formed in the same process, and the first reference mark 100 and the second reference mark 200 may be formed in the same process.
As shown in fig. 1, the first direction in this embodiment may be a direction of an x-axis in a rectangular planar coordinate system, and the second direction may be a direction of a y-axis in a rectangular planar coordinate system. The x-axis comparison marks 301 are plural in number and are disposed on the left and/or right side of the first comparison mark 101 in the plane x-axis direction, and the y-axis comparison marks 401 are plural in number and are disposed on the upper and/or lower side of the first comparison mark 101 in the plane y-axis direction. In this embodiment, an x-axis comparison mark 301 may be disposed on the left side of the first comparison mark 101, an x-axis comparison mark 301 may be disposed on the right side of the first comparison mark 101, and the x-axis comparison marks 301 may be disposed on both the left side and the right side of the first comparison mark 101; accordingly, the present embodiment may provide the x-axis reference mark 300 on the left side of the first fiducial mark 100, may provide the x-axis reference mark 300 on the right side of the first fiducial mark 100, and may provide the x-axis reference mark 300 on both the left side and the right side of the first fiducial mark 100. The y-axis comparison mark 401 may be disposed on the upper side of the first comparison mark 101, or disposed on the lower side of the first comparison mark 101, or disposed on both the upper side and the lower side of the first comparison mark 101, and the arrangement manner of the y-axis reference mark 400 is set in one-to-one correspondence with the y-axis comparison mark 401, which is not described again.
Example two:
as shown in fig. 2, the present embodiment can also provide a combined overlay mark based on the same technical concept as the first embodiment. The combined overlay mark may include a current layer comparison mark and a previous layer reference mark, the current layer comparison mark being disposed above the previous layer reference mark. When the layer comparison marks include the first comparison mark 101 and the second comparison mark 201 formed around the first comparison mark 101, the front layer reference mark includes the first reference mark 100 and the second reference mark 200 formed around the first reference mark 100. The first comparison mark 101 is vertically provided corresponding to the first reference mark 100, and the second comparison mark 201 is vertically provided corresponding to the second reference mark 200. The first comparison mark 101 and the first reference mark 100 are diffraction-based overlay marks, and the second comparison mark 201 and the second reference mark 200 are image-based overlay marks. As shown in fig. 5 and 6, the second comparison mark 201 includes an x-axis comparison mark 301 for measuring an overlay error in the first direction and a y-axis comparison mark 401 for measuring an overlay error in the second direction, the second fiducial mark 200 includes an x-axis reference mark 300 and a y-axis reference mark 400, and the x-axis comparison mark 301 is disposed in one-to-one correspondence with the x-axis reference mark 300, the y-axis comparison mark 401 is disposed in one-to-one correspondence with the y-axis reference mark 400, and the first direction is perpendicular to the second direction.
As shown in fig. 2, the difference from the first embodiment is that: the second comparison mark 201 and the second reference mark 200 in this embodiment are distributed differently.
Specifically, the first direction of the present embodiment is a direction of a y-axis in the coordinate system and the second direction is a direction of an x-axis in the coordinate system. The number of the x-axis comparison marks 301 of the present embodiment is plural, and the x-axis comparison marks are disposed on the upper side and/or the lower side of the first comparison mark 101 in the plane y-axis direction, and the overlay error in the x direction in the rectangular coordinate system is measured based on the x-axis comparison marks 301 disposed on the upper side and/or the lower side of the first comparison mark 101. The y-axis comparison marks 401 are plural in number and are disposed on the left and/or right side of the first comparison mark 101 in the plane x-axis direction to measure the overlay error in the y-direction in the rectangular coordinate system based on the y-axis comparison marks 401 disposed on the left and/or right side of one comparison mark 101. More specifically, as shown in fig. 4, the first fiducial mark 100 includes a reference grating including a plurality of stripe regions parallel to each other and a recessed region between adjacent stripe regions. The first comparison mark 101 includes a comparison grating disposed above the reference grating, and the comparison grating may have the same structure as the reference grating. The second comparison mark 201 includes a plurality of equally spaced line patterns parallel to each other, and the second reference mark 200 and the second comparison mark 201 have identical patterns. The first comparison mark 101 and the second comparison mark 201 are formed in the same process, and the first reference mark 100 and the second reference mark 200 are formed in the same process.
Example three:
as shown in fig. 3, the present embodiment can also provide a combined overlay mark based on the same technical concept as the first or second embodiment. The combined overlay mark comprises a current layer comparison mark and a front layer reference mark arranged below the current layer comparison mark. When the layer comparison marks include the first comparison mark 101 and the second comparison mark 201 formed around the first comparison mark 101, the front layer reference mark includes the first reference mark 100 and the second reference mark 200 formed around the first reference mark 100. The first comparison mark 101 is vertically provided corresponding to the first reference mark 100, and the second comparison mark 201 is vertically provided corresponding to the second reference mark 200. The first comparison mark 101 and the first reference mark 100 are diffraction-based overlay marks, and the second comparison mark 201 and the second reference mark 200 are image-based overlay marks. As shown in fig. 5 and 6, the second comparison mark 201 includes an x-axis comparison mark 301 for measurement and a y-axis comparison mark 401 for measurement of overlay error, and the second reference mark 200 includes an x-axis reference mark 300 and a y-axis reference mark 400, wherein the x-axis comparison mark 301 is disposed in one-to-one correspondence with the x-axis reference mark 300, and the y-axis comparison mark 401 is disposed in one-to-one correspondence with the y-axis reference mark 400.
As shown in fig. 3, the difference from the first embodiment is that: in this embodiment, the x-axis comparison mark 301 and the y-axis comparison mark 401 may be respectively disposed on the left side and the right side of the first comparison mark 101, and the x-axis comparison mark 301 and the y-axis comparison mark 401 may be respectively disposed on the upper side and the lower side of the first comparison mark 101. Accordingly, the present embodiment may provide the x-axis reference mark 300 and the y-axis reference mark 400 on the left and right sides of the first fiducial mark 100, and may provide the x-axis reference mark 300 and the y-axis reference mark 400 on the upper and lower sides of the first fiducial mark 100, respectively. In addition, as shown in fig. 4, the first fiducial mark 100 includes a reference grating, and the reference grating in this embodiment may include a plurality of stripe regions parallel to each other and a recessed region between adjacent stripe regions. The first comparison mark 101 includes a comparison grating disposed above the reference grating, and the comparison grating may have the same structure as the reference grating. The second comparison mark 201 includes a plurality of equally spaced line patterns parallel to each other, and the second reference mark 200 and the second comparison mark 201 have identical patterns. The first comparison mark 101 and the second comparison mark 201 are formed in the same process, and the first reference mark 100 and the second reference mark 200 are formed in the same process.
It is to be understood that reasonable variations or combinations thereof are possible on the basis of the embodiments already provided by the present disclosure; for example, the first comparison mark 101 and the first fiducial mark 100 are both image-based overlay marks, and the second comparison mark 201 and the second fiducial mark 200 are both diffraction-based overlay marks; such reasonable combinations or modifications are also intended to be within the scope of the present disclosure, under the technical spirit of the present disclosure.
Example four:
in a semiconductor device manufacturing process, it is often necessary to measure an overlay error by an overlay mark. The present embodiment and the first, second, and third embodiments or any combination thereof are based on the same technical concept, and can provide a method for measuring an overlay error by using a combined overlay mark in any embodiment of the present disclosure, specifically, by combining an IBO overlay error measuring means and a DBO overlay error measuring means. The overlay error measurement method may include, but is not limited to, the following steps.
A first overlay error is measured using the first comparison mark 101 and the first fiducial mark 100, and the first overlay error in this embodiment may be an overlay error measured by a diffraction-based overlay mark.
A second overlay error is measured using the second comparison mark 201 and the second reference mark 200, and the second overlay error in the present embodiment may be an overlay error measured by an image-based overlay mark.
And determining an error measurement result according to the obtained first nesting error and/or the second nesting error. Namely: the final overlay error can be calculated by the first overlay error and the second overlay error at the same time, or the first overlay error can be used as an error measurement result when the overlay mark based on the image fails and the like, or the second overlay error can be used as an error measurement result when the overlay mark based on the diffraction fails and the like. When the diffraction-based overlay mark has the problem of asymmetric profile (asymmetric profile) in a complex process environment, the method can directly and quickly complete the measurement of the overlay error by using the image-based overlay mark without reworking the overlay mark of the front layer of graph according to the traditional mode, and has the advantages of very high reliability, greatly improved measurement efficiency of the overlay error and improved photoetching process efficiency, and higher industrial use value. In addition, the second overlay error obtained by the overlay mark verification based on diffraction can be utilized, the first overlay error obtained by the overlay mark verification based on the image can also be utilized, namely the first overlay error and the second overlay error in the method can achieve the purpose of mutual verification, so that the method can obtain a more accurate measurement result. If the final overlay error is calculated by using the first overlay error and the second overlay error (for example, the difference between the first overlay error and the second overlay error is not large), the embodiment may adopt the weight assignment calculation, the mean value calculation, and the like. The diffraction-based measurement principle and the image-based measurement principle can be selected accordingly as needed, and this embodiment is not described in detail.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A combination overlay mark, comprising:
when the layer comparison marks comprise a first comparison mark and a second comparison mark formed around the first comparison mark;
a front layer reference mark including a first reference mark and a second reference mark formed around the first reference mark;
the first comparison mark and the first reference mark are arranged in a vertically corresponding manner, and the second comparison mark and the second reference mark are arranged in a vertically corresponding manner.
2. The composite overlay mark of claim 1,
the first comparison mark and the first reference mark are diffraction-based overlay marks;
the second comparison mark and the second reference mark are both image-based overlay marks.
3. The composite overlay mark of claim 2,
the second comparison marks comprise an x-axis comparison mark for measuring the alignment error in the first direction and a y-axis comparison mark for measuring the alignment error in the second direction;
the second reference mark comprises an x-axis reference mark and a y-axis reference mark;
the x-axis comparison marks and the x-axis reference marks are arranged in a one-to-one correspondence manner, and the y-axis comparison marks and the y-axis reference marks are arranged in a one-to-one correspondence manner; the first direction is perpendicular to the second direction.
4. The composite overlay mark of claim 3,
the x-axis comparison marks are multiple in number and are arranged on the left side and/or the right side of the first comparison mark along the direction of the plane x-axis;
the y-axis comparison marks are multiple in number and are arranged on the upper side and/or the lower side of the first comparison mark along the plane y-axis direction.
5. The composite overlay mark of claim 3,
the x-axis comparison marks are multiple in number and are arranged on the upper side and/or the lower side of the first comparison mark along the plane y-axis direction;
the y-axis comparison marks are multiple in number and are arranged on the left side and/or the right side of the first comparison mark along the direction of the plane x-axis.
6. The composite overlay mark of claim 2,
the first fiducial mark comprises a fiducial grating;
the first comparison mark comprises a comparison grating arranged above the reference grating.
7. The composite overlay mark of claim 6,
the reference grating comprises a plurality of strip-shaped areas which are parallel to each other and a sunken area which is positioned between the adjacent strip-shaped areas;
the comparison grating has the same structure as the reference grating.
8. The composite overlay mark of claim 1,
the second comparison mark comprises a plurality of mutually parallel equidistant line patterns;
the second reference mark has the same pattern as the second comparison mark.
9. The composite overlay mark of claim 1,
the first comparison mark and the second comparison mark are formed in the same process;
the first reference mark and the second reference mark are formed in the same process.
10. A method of measuring overlay error using the overlay mark of any of claims 1 to 9, comprising:
measuring a first overlay error using the first comparison mark and the first fiducial mark;
measuring a second registration error using the second comparison mark and the second reference mark;
and determining an error measurement result according to the first nesting error and/or the second nesting error.
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|---|---|---|---|---|
| CN115586714A (en) * | 2022-12-13 | 2023-01-10 | 合肥新晶集成电路有限公司 | Alignment pattern and measurement method |
| CN117289562A (en) * | 2023-11-22 | 2023-12-26 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
| CN117289562B (en) * | 2023-11-22 | 2024-02-13 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
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