CN201897692U - Masking plate with alignment marks - Google Patents
Masking plate with alignment marks Download PDFInfo
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- CN201897692U CN201897692U CN2010205648075U CN201020564807U CN201897692U CN 201897692 U CN201897692 U CN 201897692U CN 2010205648075 U CN2010205648075 U CN 2010205648075U CN 201020564807 U CN201020564807 U CN 201020564807U CN 201897692 U CN201897692 U CN 201897692U
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Abstract
The utility model discloses an alignment mark, which comprises two parallel horizontal lines and two parallel vertical lines. The two parallel horizontal lines and the two parallel vertical lines form a square or rectangular structure with four unclosed corners, and as one optional corner includes one horizontal line and one vertical line, fixed points can be found for a machine by the aid of the optional corner and the efficiency of the machine is increased. Simultaneously, the utility model further discloses a masking plate with alignment marks, and a middle area of the masking plate is provided with the alignment marks evenly, so that the integral alignment deviation between the actual masking plate and a designed map can be calculated effectively, and the relative alignment deviation among the alignment marks of two key layers in actual process can also be calculated effectively.
Description
Technical field
The utility model relates to the semiconductor lithography technical field, relates in particular to a kind of mask with alignment mark.
Background technology
So-called photoetching is the figure on the mask by exposure repeatedly, copies on the silicon chip that scribbles photoresist, and the figure behind the photoetching development on the mask appears on the silicon chip.Comprised the required figure of one or more chips on the mask, exposure process is the ultraviolet light that sends of LASER Light Source or the light shield of deep UV (ultraviolet light) by aiming at, and the figure on the light shield is accurately duplicated (within standard) become final graphics on the photoresist.
Photoetching technique is the guide and the basis of large scale integrated circuit manufacturing technology and micro-optic, micro mechanical technology, and it has determined the integrated level of integrated circuit (IC).And the control of the precision of litho machine alignment system has determined the complexity and the functional density of integrated circuit.In the IC manufacture process, a complete chip generally all will be through tens to twenties times photoetching, in photoetching repeatedly, except the photoetching first time, the photoetching of all the other levels before exposure all will with the figure of this level with before the pattern alignment that stays of level.Therefore, alignment precision will directly influence product quality, and alignment speed and efficient will influence production efficiency of products.
The large scale integrated circuit manufacturing is that alignment error should be not more than 1/4 to 1/3 of characteristic dimension to the regulation of lithography alignment.Along with the manufacturing fast development of IC, the optical patterning technology improves constantly, and the chip feature size is also constantly dwindled, and dwindling of characteristic dimension then produced more accurate alignment precision requirement.This alignment precision requires not only to be embodied in the aligning between the levels in the processing step, is also embodied in the aligning of front and back mask in the mask manufacture process.And for logical integrated circuit, alignment precision is particularly important, and this is because in SRAM, between two key stratums, be between polysilicon gate and the active area, between contact hole (contact) and the polysilicon gate, and the alignment precision budget between contact hole and the active area is very important.The factor that influences alignment precision mainly comprises two aspects: the one, and manufacturing process (process) causes itself; The 2nd, cause by mask (mask).Along with constantly dwindling of live width, also more and more higher for the deviation of the alignment requirement of mask.Particularly the general alignment deviation of mask needs effective method to detect, and guarantees the quality of mask.
For the assessment and the monitoring of the deviation of the alignment that detects mask, be that the deviation between the design attitude of physical location by each alignment mark relatively and domain obtains.And deviation of the alignment is normally by the measurement and positioning board, for example come card (Leica) board is located and is measured, the measuring principle of come card board is to obtain deviation of the alignment by the difference between actual range between the optical measurement point of fixity and the Design Theory distance, and, can measure minimum value, maximal value, mean value and three variances of deviation of the alignment by setting.It is by a horizontal line and a vertical line that come card board is sought the point of fixity of measuring, and seeks the intersection point between horizontal line and the vertical line, is point of fixity.Therefore as long as alignment mark has provided a horizontal line and a vertical line, come card board all can find the point of fixity of measurement.
Please refer to Fig. 1, Fig. 1 is the structural representation of the mask of existing band alignment mark, as shown in Figure 1, existing alignment mark 103 is cruciform usually, and existing alignment mark 103 is placed in the fringe region 102 of mask 100 usually, and is not placed in the graphics field 101 of mask 100.
Yet therefore existing alignment mark has only a point of fixity to seek for board owing to have only a horizontal line and a vertical line, is unfavorable for improving the efficient of board; And existing alignment mark only is placed on the fringe region of mask, because mask may cause the distortion or the displacement of margin and center graphics field to a certain degree in manufacturing process, therefore, the basic value of mask registration can only be provided, and the actual aligning performance of mask inside can not be reacted effectively.
Therefore, be necessary existing alignment mark and mask are improved.
The utility model content
The purpose of this utility model is to provide the mask of a kind of alignment mark and band alignment mark, improving the efficient of board, and reacts the actual general alignment performance of mask inside effectively.
For addressing the above problem, the utility model proposes a kind of alignment mark, be used to detect the deviation of the alignment of mask, this alignment mark comprises two parallel horizontal line and two parallel vertical lines, and the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle.
Optionally, the length of described horizontal line is 6～18 μ m, and the width of described horizontal line is 1～2 μ m, and the distance between the outer edge of described two parallel horizontal lines is 10～20 μ m.
Optionally, the length of described vertical line is 6～18 μ m, and the width of described vertical line is 1～2 μ m, and the distance between the outer edge of described two parallel vertical lines is 10～20 μ m.
Simultaneously, for addressing the above problem, the utility model also proposes a kind of mask with alignment mark, wherein, described mask comprises fringe region and zone line, and described zone line has the required pattern of circuit, has white space between the described pattern, described zone line has a plurality of alignment marks, and described alignment mark comprises two parallel horizontal line and two parallel vertical lines, and the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle; Described alignment mark is positioned at described white space, and described alignment mark is evenly distributed in the described zone line.
Optionally, the quantity of described alignment mark is nine, and one of them alignment mark is positioned at the center of described zone line, and all the other eight alignment marks are evenly distributed in the edge of described zone line.
Optionally, the length of described horizontal line is 6～18 μ m, and the width of described horizontal line is 1～2 μ m, and the distance between the outer edge of described two parallel horizontal lines is 10～20 μ m.
Optionally, the length of described vertical line is 6～18 μ m, and the width of described vertical line is 1～2 μ m, and the distance between the outer edge of described two parallel vertical lines is 10～20 μ m.
The utility model makes it compared with prior art owing to adopt above technical scheme, has following advantage and good effect:
1, the alignment mark that provides of the utility model is four untight square or rectangular structures in angle, because any one angle all comprises a horizontal line and a vertical line, makes board can utilize any one angle to seek point of fixity, has improved the efficient of board;
2, the mask that provides of the utility model has alignment mark at the zone line of mask, thereby can calculate the general alignment deviation between the domain of actual mask version and design effectively;
3, the mask that provides of the utility model has alignment mark at the zone line of mask, thereby can calculate the relative deviation of the alignment between the two key stratum masks in the actual process effectively, and can judge further that this deviation of the alignment is intrinsic, still be because actual process causes;
4, the mask that provides of the utility model has alignment mark at the zone line of mask, thereby can be advantageously used in the general alignment deviation between caused two key stratums of technology such as chemistry mechanical lapping, thermal treatment, strained silicon.
Description of drawings
Fig. 1 is the structural representation of the mask of existing band alignment mark;
The structural representation of the alignment mark that Fig. 2 provides for the utility model embodiment;
The structural representation of the mask of the band alignment mark that Fig. 3 provides for the utility model embodiment.
Embodiment
Be described in further detail below in conjunction with the mask of the drawings and specific embodiments the alignment mark that the utility model proposes and band alignment mark.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of aid illustration the utility model embodiment lucidly.
Core concept of the present utility model is, a kind of alignment mark is provided, this alignment mark comprises two parallel horizontal line and two parallel vertical lines, the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle, because any one angle all comprises a horizontal line and a vertical line, make board can utilize any one angle to seek point of fixity, improved the efficient of board; The utility model also provides a kind of mask with alignment mark simultaneously, the zone line of described mask is provided with alignment mark equably, thereby can calculate the general alignment deviation between the domain of actual mask version and design effectively, and the relative deviation of the alignment between the two key stratum masks in the actual process.
Please refer to Fig. 2, the structural representation of the alignment mark that Fig. 2 provides for the utility model embodiment, as shown in Figure 2, the alignment mark 200 that the utility model embodiment provides comprises two parallel horizontal line and two parallel vertical lines, and the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle.
Further, the length L of described horizontal line
1Be 6～18 μ m, the width W of described horizontal line
1Be 1～2 μ m, the distance D between the outer edge of described two parallel horizontal lines
1Be 10～20 μ m; Thereby can not take too many mask space providing under the prerequisite of alignment mark clearly.
Further, the length L of described vertical line
2Be 6～18 μ m, the width W of described vertical line
2Be 1～2 μ m, the distance D between the outer edge of described two parallel vertical lines
2Be 10～20 μ m; Thereby can not take too many mask space providing under the prerequisite of alignment mark clearly.
Please continue with reference to figure 3, the structural representation of the mask of the band alignment mark that Fig. 3 provides for the utility model embodiment, as shown in Figure 3, the mask 300 of the band alignment mark that the utility model embodiment provides comprises fringe region 302 and zone line 301, described zone line 301 has the required pattern of circuit, has white space between the described pattern, described zone line 301 has a plurality of alignment marks 200, described alignment mark 200 comprises two parallel horizontal line and two parallel vertical lines, and the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle; Described alignment mark position 200 is in described white space, and described alignment mark 200 is evenly distributed in the described zone line 301.
Further, the quantity of described alignment mark 200 is nine, and one of them alignment mark 200 is positioned at the center of described zone line 301, all the other eight edges that fiducial mark 200 notes are evenly distributed in described zone line 301; Thereby can when the auxiliary mask version is aimed at effectively, not take too many mask space.
Further, the length of described horizontal line is 6～18 μ m, and the width of described horizontal line is 1～2 μ m, thereby the distance between the outer edge of described two parallel horizontal lines can not take too many mask space providing under the prerequisite of alignment mark clearly for 10～20 μ m.
Further, the length of described vertical line is 6～18 μ m, and the width of described vertical line is 1～2 μ m, thereby the distance between the outer edge of described two parallel vertical lines can not take too many mask space providing under the prerequisite of alignment mark clearly for 10～20 μ m.
The deviation of the alignment measuring method of the mask 300 of the band alignment mark that the utility model provides is:
Deviation of the alignment between the mask of 1) measurement reality and the domain of design: use the measurement and positioning board, as come card board, utilize the horizontal line and the vertical line at any one angle in the alignment mark 200 in the actual mask, find the horizontal line at this angle and the intersection point of vertical line, this intersection point is first point of fixity, sharp again using the same method found second point of fixity that is different from this first point of fixity, measure the distance between first point of fixity and second point of fixity then, with this distance with the design domain on corresponding distance compare, calculate first deviation of the alignment;
Utilize above-mentioned same method to calculate second deviation of the alignment between the domain of actual mask and design, the 3rd deviation of the alignment etc.;
Utilize first deviation of the alignment, second deviation of the alignment, the 3rd deviation of the alignment etc. to calculate minimum value, maximal value, mean value and three variances of deviation of the alignment;
Relative deviation of the alignment between the two key stratum masks in the mask of 2) measurement reality: use the measurement and positioning board, as come card board, utilize the horizontal line and the vertical line at any one angle in the alignment mark 200 in the first key stratum mask, find the horizontal line at this angle and the intersection point of vertical line, this intersection point is first point of fixity, sharp again using the same method found second point of fixity that is different from this first point of fixity, measures the distance between first point of fixity and second point of fixity then; This distance and corresponding distance on the second key stratum mask are compared, calculate first deviation of the alignment;
Utilize above-mentioned same method to calculate second deviation of the alignment between the two key stratum masks in the actual mask, the 3rd deviation of the alignment etc.;
Utilize first deviation of the alignment, second deviation of the alignment, the 3rd deviation of the alignment etc. to calculate minimum value, maximal value, mean value and three variances of deviation of the alignment.
In a specific embodiment of the present utility model, the quantity of described alignment mark is nine, yet should be realized that, according to the alignment precision requirement, the quantity of described alignment mark can also be worth for other, for example 15 etc.
In sum, the utility model provides a kind of alignment mark, this alignment mark comprises two parallel horizontal line and two parallel vertical lines, the described two parallel horizontal line vertical lines parallel with two are formed four untight square or rectangular structures in angle, because any one angle all comprises a horizontal line and a vertical line, make board can utilize any one angle to seek point of fixity, improved the efficient of board; The utility model also provides a kind of mask with alignment mark simultaneously, the zone line of described mask is provided with alignment mark equably, thereby can calculate the general alignment deviation between the domain of actual mask version and design effectively, and the relative deviation of the alignment between the two key stratum masks in the actual process.
Obviously, those skilled in the art can carry out various changes and modification to utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (4)
1. mask with alignment mark, wherein, described mask comprises fringe region and zone line, described zone line has the required pattern of circuit, has white space between the described pattern, it is characterized in that the zone line of described mask has a plurality ofly forms four angle untight square or rectangular structure alignment marks by two parallel horizontal line and two parallel vertical lines, and is evenly distributed in the described zone line.
2. the mask of band alignment mark as claimed in claim 1, it is characterized in that, the quantity of described alignment mark is nine, and one of them alignment mark is positioned at the center of described zone line, and all the other eight alignment marks are evenly distributed in the edge of described zone line.
3. the mask of band alignment mark as claimed in claim 1 is characterized in that, the length of described horizontal line is 6～18 μ m, and the width of described horizontal line is 1～2 μ m, and the distance between the outer edge of described two parallel horizontal lines is 10～20 μ m.
4. the mask of band alignment mark as claimed in claim 1 is characterized in that, the length of described vertical line is 6～18 μ m, and the width of described vertical line is 1～2 μ m, and the distance between the outer edge of described two parallel vertical lines is 10～20 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205648075U CN201897692U (en) | 2010-10-16 | 2010-10-16 | Masking plate with alignment marks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205648075U CN201897692U (en) | 2010-10-16 | 2010-10-16 | Masking plate with alignment marks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201897692U true CN201897692U (en) | 2011-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205648075U Expired - Fee Related CN201897692U (en) | 2010-10-16 | 2010-10-16 | Masking plate with alignment marks |
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| Country | Link |
|---|---|
| CN (1) | CN201897692U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102722082A (en) * | 2012-07-04 | 2012-10-10 | 上海宏力半导体制造有限公司 | Mask and overlay measuring method |
| CN102866576A (en) * | 2012-08-27 | 2013-01-09 | 京东方科技集团股份有限公司 | Mask plate group and method for determining alignment precision range by using mask plate group |
| CN102866604A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Mask plate alignment mark arrangement method |
| CN102944970A (en) * | 2012-11-16 | 2013-02-27 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| CN104934413A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Overlapping alignment mark and substrate with the same |
| CN105759563A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for contamination detection of mask or wafer |
| CN109186762A (en) * | 2018-09-30 | 2019-01-11 | 中国科学院西安光学精密机械研究所 | A kind of method and coding templet in determining coded image data region |
-
2010
- 2010-10-16 CN CN2010205648075U patent/CN201897692U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102722082A (en) * | 2012-07-04 | 2012-10-10 | 上海宏力半导体制造有限公司 | Mask and overlay measuring method |
| CN102722082B (en) * | 2012-07-04 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | A kind of mask plate and alignment precision measurement method |
| CN102866576A (en) * | 2012-08-27 | 2013-01-09 | 京东方科技集团股份有限公司 | Mask plate group and method for determining alignment precision range by using mask plate group |
| CN102866604A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Mask plate alignment mark arrangement method |
| CN102944970A (en) * | 2012-11-16 | 2013-02-27 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| CN102944970B (en) * | 2012-11-16 | 2014-07-02 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| US9057947B2 (en) | 2012-11-16 | 2015-06-16 | Boe Technology Group Co., Ltd. | Method for aligning substrate and mask and method for preparing semiconductor device |
| CN104934413A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Overlapping alignment mark and substrate with the same |
| CN105759563A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for contamination detection of mask or wafer |
| CN105759563B (en) * | 2014-12-16 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | Photomask and method for detecting photomask or wafer contamination |
| CN109186762A (en) * | 2018-09-30 | 2019-01-11 | 中国科学院西安光学精密机械研究所 | A kind of method and coding templet in determining coded image data region |
| CN109186762B (en) * | 2018-09-30 | 2023-09-01 | 中国科学院西安光学精密机械研究所 | Method for determining coding image data area and coding template |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130312 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20130312 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20181016 |
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| CF01 | Termination of patent right due to non-payment of annual fee |