CN104465619B - A kind of picture structure and its alignment precision measurement method of alignment precision measurement - Google Patents
A kind of picture structure and its alignment precision measurement method of alignment precision measurement Download PDFInfo
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Abstract
The picture structure and its alignment precision measurement method measured the invention discloses a kind of alignment precision, the picture structure that alignment precision measures include：One tested figure, the tested figure are provided with N layers of nested structure.The alignment precision measurement method, using a kind of picture structure that alignment precision measures, the equipment that light microscope measures alignment precision is used to measure alignment precision to the tested figure to obtain alignment precision between jth layer and i-th layer, the jth layer structure includes current photolithographic layer and destination layer, described i-th layer includes destination layer, and i is more than j.The tested figure of the present invention can measure that current layer is previous therewith or the alignment precision of multiple destination layers simultaneously, using same group of measurement pattern, save time of measuring, and the alignment precision before can be used between different target layer measures, and reduces the occupied area of alignment precision test pattern in chip production.
Description
Technical field
The picture structure and its alignment essence measured the present invention relates to field of semiconductor manufacture more particularly to a kind of alignment precision
Spend measurement method.
Background technology
It is continuously improved with the integrated level of semiconductor chip, the characteristic size of transistor constantly narrows down to nanoscale, produces
Technique also becomes increasingly complex.The three-dimensional structure of various components is broken down into the two-dimensional litho pattern of tens layers in production.For
Reach good device performance, each litho pattern to ensure between layers precisely align alignment (Overlay).
It is typically respectively to place an alignment precision measurement pattern in the figure of upper and lower two lithography layers that alignment precision, which measures,
(Overlay Mark), the deviation of the relative position by measuring two alignment figures, to ensure between two layers of litho pattern
Alignment.The common accurate test pattern of alignment includes inside and outside box (box-in-box, as shown in Figure 1) and inside and outside stripe shape (bar-
In-bar, as shown in Figure 2).But with the continuous diminution of chip size, current layer is necessary to ensure that for certain particularly critical layers
Alignment precision between the even above destination layer of front 2.Such as logic and CIS products contact (CT) layer of 55nm nodes are wanted
Ask both be aligned polysilicon (POLY) layer be aligned again more front active area (AA) layer, at this moment need design two groups tradition
OverlayMark is respectively placed in when the different zones of layer litho pattern are measured respectively.
Chinese patent (CN101435997B) discloses a kind of resolution chart and measurement method of photoetching alignment precision, test
Figure, the rectangular graph being made of multiple strips；Each sliver inside is made of multiple small rectangles.Measurement method includes as follows
Step：Utilize laser scanning；Detect diffraction light.The invention is compared using diffraction principle measurement pattern with common measurement pattern,
The distribution of diffraction light is related to the space periodic of whole figure, and the reflectivity of intensity and figure, graphics shape, step depth,
Detect the correlations such as light wave length.
The patent is scanned by using the laser of different wave length, can reduce measuring signal intensity and measurement pattern system
The correlation of technique is made, it is final to improve the physical features tolerance measured to measurement pattern.But there is no solve the previous quilt of mesh
Mapping shape can only measure the problem of alignment precision of current layer and a destination layer.
Chinese patent (CN101982882A) discloses a kind of registration measurement pattern, including：Substrate；Photoresist is located at institute
It states on substrate；First, which is aligned item and second, is aligned item, is respectively positioned in the substrate, and described first is aligned article and described
Two, which are aligned item, is mutually parallel, and is located at the both sides of the photoresist；First protector and the second protector, are respectively positioned on the substrate
It is interior, and first protector and second protector are mutually parallel, and are located at the both sides of the photoresist, first protection
Slot and described first to be aligned item vertical.
The patent solves in scribe line and will produce photoetching offset plate figure with equidirectional layer register measurement markers of scribe line
Pattern asymmetry problem, and the uneven initiation of injection ion diffusion is prevented to be aligned a layer aberration problem, and then improve set
The accuracy and confidence of locating tab assembly.But current layer and destination layer can only be measured there is no the previous tested figure of mesh is solved
The problem of alignment precision.
Invention content
The present invention is to solve the previous tested figure of mesh to measure asking for current layer and the alignment precision of a destination layer
Topic, to provide a kind of technical solution for the picture structure and its alignment precision measurement method that alignment precision measures.
The picture structure that a kind of alignment precision of the present invention measures, including：One tested figure, the tested figure setting
There is N layers of a nested structure, the N is more than or equal to 2, and the N layer structure is in shape of the mouth as one speaks arrangement from inside to outside, from the 1st layer to n-th layer
Size becomes larger, and described 1st layer forms for current photolithographic layer, and rest layers are respectively that destination layer is formed.
Preferably, the shape of the mouth as one speaks is frame-type structure.
Preferably, the shape of the mouth as one speaks is made of four strip structures.
Preferably, the distance between two neighbouring layers are more than 5 microns.
Preferably, it is alignment enclosed construction by the shape of the mouth as one speaks that four strip structures form.
A kind of alignment precision measurement method, using a kind of picture structure that alignment precision measures, using optical microphotograph
The equipment that mirror measures alignment precision measures alignment precision to obtain alignment between jth layer and i-th layer to the tested figure
Precision, the jth layer structure include current photolithographic layer and destination layer, and described i-th layer includes destination layer, and i is more than j.
Preferably, the detailed process of measurement is：
Every layer of outer edge laterally corresponds to two lateral coordinates, and every layer of outer edge longitudinally corresponds to two longitudinal coordinates,
The lateral alignment precision between jth layer and i-th layer is obtained according to formula (1)：
(|xiL-xjL|-|xiR-xjR|)/2 (1)
Wherein, xiL indicates that i-th layer of destination layer left side lateral coordinates value, xiR indicate i-th layer of destination layer right side laterally
Coordinate value, xjL indicate that the left side lateral coordinates value of jth layer, xjR indicate that the right side lateral coordinates value of jth layer, i are more than or equal to 2；
Longitudinal alignment precision between jth layer and i-th layer is obtained according to formula (2)：
(|yiU-yjU|-|yiD-yjD|)/2 (2)
Wherein, yiU indicates that i-th layer of destination layer top longitudinal coordinate value, yiU indicate that i-th layer of destination layer top is longitudinal
Coordinate value, yjD indicate that the lower section longitudinal coordinate value of jth layer, yjD indicate the lower section longitudinal coordinate value of jth layer.The present invention's is beneficial
Effect：
The tested figure of the present invention can measure that current layer is previous therewith or the alignment precision of multiple destination layers simultaneously, adopt
With same group of measurement pattern, time of measuring is saved, and the alignment precision before can be used between different target layer measures, and reduces
The occupied area of alignment precision test pattern in chip production.
Description of the drawings
Fig. 1 is traditional inside and outside frame-type alignment precision measurement structural representation；
Fig. 2 is traditional inside and outside stripe shape alignment precision measurement structural representation；
Fig. 3 is a kind of structural schematic diagram of the embodiment for the picture structure that alignment precision of the present invention measures.
In attached drawing：A. the 1st layer；B. the 2nd layer；C. the 3rd layer.
Specific implementation mode
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
The present invention provides a kind of picture structure that alignment precision measures, including：One tested figure, the tested figure setting
There is N layers of a nested structure, the N is more than or equal to 2, and the N layer structure is in shape of the mouth as one speaks arrangement from inside to outside, from the 1st layer to n-th layer
Size becomes larger, and described 1st layer forms for current photolithographic layer, and rest layers are respectively that destination layer is formed.
In a preferred embodiment, the shape of the mouth as one speaks is frame-type structure.
In a preferred embodiment, the shape of the mouth as one speaks is made of four strip structures.
In a preferred embodiment, the distance between two neighbouring layer structures are more than 5 microns.
In a preferred embodiment, it is alignment enclosed construction by the shape of the mouth as one speaks that four strip structures form.
A kind of alignment precision measurement method, using a kind of above-mentioned picture structure that alignment precision measures, using optical microphotograph
The equipment that mirror measures alignment precision measures alignment precision to obtain alignment between jth layer and i-th layer to the tested figure
Precision, the jth layer structure include current photolithographic layer and destination layer, and described i-th layer includes destination layer, and i is more than j.
In a preferred embodiment, the detailed process of measurement is：
Every layer of outer edge laterally corresponds to two lateral coordinates, and every layer of outer edge longitudinally corresponds to two longitudinal coordinates,
The lateral alignment precision between jth layer and i-th layer is obtained according to formula (1)：
(|xiL-xjL|-|xiR-xjR|)/2 (1)
Wherein, xiL indicates that i-th layer of destination layer left side lateral coordinates value, xiR indicate i-th layer of destination layer right side laterally
Coordinate value, xjL indicate that the left side lateral coordinates value of jth layer, xjR indicate that the right side lateral coordinates value of jth layer, i are more than or equal to 2；
Longitudinal alignment precision between jth layer and i-th layer is obtained according to formula (2)：
(|yiU-yjU|-|yiD-yjD|)/2 (2)
Wherein, yiU indicates that i-th layer of destination layer top longitudinal coordinate value, yiU indicate that i-th layer of destination layer top is longitudinal
Coordinate value, yjD indicate that the lower section longitudinal coordinate value of jth layer, yjD indicate the lower section longitudinal coordinate value of jth layer.
The present invention is suitable for alignment precision between 3 layers and the above lithography layer and measures, and using same group of measurement pattern, saves and surveys
Measure the time；Reduce the occupied area of alignment precision test pattern in chip production, the area of saving can be used for placing other
Monitoring and resolution chart.
In a preferred embodiment, by taking 3-tier architecture as an example, the figure of the alignment precision measurement of multilayer nest as shown in Figure 3
Shape structure, the picture structure which measures include a tested figure, and the tested figure has 3-tier architecture；This is tested
Figure is provided with the 1st layer of A, the 2nd layer of B and the 3rd layer of C, and the distance between adjacent two layers are generally higher than 5 microns, wherein the 1st layer of A by
Current photolithographic layer is formed, and the 2nd layer of B and the 3rd layer of C-structure is respectively formed by other required destination layers respectively.Its 1st layer of A, 2
B and the 3rd layer of C of layer can use inside and outside stripe shape and inside and outside box or other similar structures respectively according to technique difference, according to practical core
Piece demand, 3 layers or more of nesting can be realized similarly.
When specific measurement, first, the equipment for measuring alignment precision by light microscope measures tested figure, obtains
Coordinate x1L, x1R, x2L, x2R, x3L, x3R, y1U, y1D, y2U to the 1st layer of A, the 2nd layer of B and the 3rd layer of C in the directions x and y,
Y2D, y3U, y3D；
Then, calculate (| x2L-x1L |-| x2R-x1R |)/2 and (| y2U-y1U |-| y2D-y1D |)/2 obtain the 1st layer of A and
The alignment precision in the directions x and y between 2nd layer of B；
Secondly, calculate (| x3L-x1L |-| x3R-x1R |)/2 and (| y3U-y1U |-| y3D-y1D |)/2 obtain the 1st layer of A and
The alignment precision in the directions x and y between 3rd layer of C；Final data feeds back to system terminal, is measured.
The alignment precision between required layer can also similarly be measured successively for the nested structure of the 3rd layer of C or more.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (6)
1. the picture structure that a kind of alignment precision measures, which is characterized in that including：One tested figure, the tested figure setting
There is N layers of a nested structure, the N is more than or equal to 2, and the N layer structure is in shape of the mouth as one speaks arrangement from inside to outside, from the 1st layer to n-th layer
Size becomes larger, and described 1st layer forms for current photolithographic layer, and rest layers are respectively that destination layer is formed；
The equipment that light microscope measures alignment precision is used to measure alignment precision to the tested figure to obtain jth layer
With i-th layer between alignment precision, the jth layer structure includes current photolithographic layer and destination layer, and described i-th layer includes destination layer,
And i is more than j；The detailed process of measurement is：
Every layer of outer edge laterally corresponds to two lateral coordinates, and every layer of outer edge longitudinally corresponds to two longitudinal coordinates, according to
Formula (1) obtains the lateral alignment precision between jth layer and i-th layer：
(|xiL-xjL|-|xiR-xjR|)/2 (1)
Wherein, xiL indicates that i-th layer of destination layer left side lateral coordinates value, xiR indicate i-th layer of destination layer right side lateral coordinates
Value, xjL indicate that the left side lateral coordinates value of jth layer, xjR indicate that the right side lateral coordinates value of jth layer, i are more than or equal to 2；
Longitudinal alignment precision between jth layer and i-th layer is obtained according to formula (2)：
(|yiU-yjU|-|yiD-yjD|)/2 (2)
Wherein, yiU indicates that i-th layer of destination layer top longitudinal coordinate value, yiU indicate i-th layer of destination layer top longitudinal coordinate
Value, yjD indicate that the lower section longitudinal coordinate value of jth layer, yjD indicate the lower section longitudinal coordinate value of jth layer.
2. the picture structure that alignment precision as described in claim 1 measures, which is characterized in that the shape of the mouth as one speaks is frame-type structure.
3. the picture structure that alignment precision as described in claim 1 measures, which is characterized in that the shape of the mouth as one speaks is by four strip structures
Composition.
4. the picture structure that alignment precision as described in claim 1 measures, which is characterized in that the distance between two neighbouring layers
More than 5 microns.
5. the picture structure that alignment precision as claimed in claim 3 measures, which is characterized in that the mouth being made of four strip structures
Type is alignment enclosed construction.
6. a kind of alignment precision measurement method, which is characterized in that using a kind of alignment precision as described in claim 1 to 5 is any
The picture structure of measurement, the equipment for measuring alignment precision using light microscope measure alignment precision to the tested figure
To obtain alignment precision between jth layer and i-th layer, the jth layer structure includes current photolithographic layer and destination layer, described i-th layer
Including destination layer, and i is more than j；The detailed process of measurement is：
Every layer of outer edge laterally corresponds to two lateral coordinates, and every layer of outer edge longitudinally corresponds to two longitudinal coordinates, according to
Formula (1) obtains the lateral alignment precision between jth layer and i-th layer：
(|xiL-xjL|-|xiR-xjR|)/2 (1)
Wherein, xiL indicates that i-th layer of destination layer left side lateral coordinates value, xiR indicate i-th layer of destination layer right side lateral coordinates
Value, xjL indicate that the left side lateral coordinates value of jth layer, xjR indicate that the right side lateral coordinates value of jth layer, i are more than or equal to 2；
Longitudinal alignment precision between jth layer and i-th layer is obtained according to formula (2)：
(|yiU-yjU|-|yiD-yjD|)/2 (2)
Wherein, yiU indicates that i-th layer of destination layer top longitudinal coordinate value, yiU indicate i-th layer of destination layer top longitudinal coordinate
Value, yjD indicate that the lower section longitudinal coordinate value of jth layer, yjD indicate the lower section longitudinal coordinate value of jth layer.
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| CN104898383B (en) * | 2015-06-29 | 2018-07-06 | 上海华力微电子有限公司 | Method, calibration mark and the measuring system of double-deck alignment precision controlling layer management |
| CN105206547B (en) * | 2015-09-28 | 2018-05-01 | 上海集成电路研发中心有限公司 | A kind of method for measuring dual imaging alignment precision |
| CN108628107A (en) * | 2018-04-13 | 2018-10-09 | 上海华力集成电路制造有限公司 | Overlay error measurement method and overlay mark |
| CN110364449B (en) * | 2019-07-24 | 2022-06-14 | 上海华力集成电路制造有限公司 | Monitoring method for gate oxide nitrogen-doped annealing temperature |
| CN112408316B (en) * | 2020-11-20 | 2024-04-12 | 中国科学院上海微系统与信息技术研究所 | Preparation method of double-sided super-surface structure |
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| US7180593B2 (en) * | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
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