CN108628107A - Overlay error measurement method and overlay mark - Google Patents
Overlay error measurement method and overlay mark Download PDFInfo
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- CN108628107A CN108628107A CN201810330305.7A CN201810330305A CN108628107A CN 108628107 A CN108628107 A CN 108628107A CN 201810330305 A CN201810330305 A CN 201810330305A CN 108628107 A CN108628107 A CN 108628107A
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- overlay mark
- layer
- front layer
- overlay
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a kind of overlay marks, it is related to ic manufacturing technology, the overlay mark includes when layer overlay mark and relative to the first front layer overlay mark and the second front layer overlay mark when layer overlay mark, and the first front layer overlay mark is combined into the front layer overlay mark of the overlay mark of an overlay mark and Y-direction including X-direction with the second front layer overlay mark；So that wafer can simultaneously be obtained in a step alignment precision measurement process when between layer and the first front layer front layer alignment precision and when the alignment precision between layer and the second front layer, and then the alignment precision can be improved by the alignment precision correcting system of litho machine.
Description
Technical field
The present invention relates to a kind of ic manufacturing technology more particularly to a kind of overlay error measurement methods.
Background technology
Photoetching process is the committed step in semiconductor integrated circuit manufacture, and the alignment precision of photoetching is to weigh photoetching process
One of key parameter, it refers to the offset namely overlay error between the upper layer and lower layer figure of wafer.Usually pass through measurement
Offset between upper layer and lower layer overlay mark measures overlay error to assess alignment precision.
Referring to Fig. 1, Fig. 1 is a kind of overlay mark schematic diagram of the prior art, as shown in Figure 1, being commonly used in photoetching process
Alignment precision measurement markers (hereinafter referred to as overlay mark), wherein front layer (being aligned layer) overlay mark 100 is via photoetching
It is formed on wafer with after etching technics, is formed on wafer after layer (alignment layer) overlay mark 200 is via photoetching,
Alignment precision is divided into the alignment precision Δ X of X-direction and the alignment precision Δ Y of Y-direction, as shown in Figure 1, the alignment precision of X-direction
Δ X=(X2-X1)/2, the alignment precision Δ Y=(Y2-Y1)/2 of Y-direction.In the actual production process, in addition to measuring alignment essence
Other than degree, a set of litho machine alignment precision correcting system is also had, the operation principle of the system is：Measured alignment precision it
Afterwards, measured overlay error is fed back into litho machine, the alignment parameter of litho machine is compensated, the alignment parameter after compensation
It is used further to the wafer of present lot wafer or next batch, to enable the wafer of present lot wafer or next batch to obtain more
Good alignment precision.
Usually, considered one of alignment precision when the offset of layer and a front layer relationship, but some when
It waits, due to graphic designs, it would be desirable to which consideration is a relationship when the offset of layer and two front layers.It please refers to
Fig. 2, Fig. 2 are a kind of overlay mark schematic diagram of the prior art, as shown in Fig. 2, 500 figure of contact hole has as layer pattern is worked as
Source region 300 and 400 figure of polysilicon will consider contact hole graph as preceding layer pattern when forming 500 figure of contact hole
500 and polysilicon graphics 400 offset in the X direction, while considering contact hole graph 500 and active area figure again
300 offset in the Y direction, to ensure that contact hole graph 500 can be fallen within inside active area 300 or polysilicon 400, otherwise
It can cause poor contact and cause to open a way, in other words, need to consider same when layer (contact hole 500) front layer different with two
The alignment precision of (active area 300 and polysilicon 400), the direction for the alignment precision only to be considered are different.For
Such case, overlay mark shown in FIG. 1 are just no longer applicable in, because it can only be used for measuring a set for working as layer and a front layer
Carve precision.A kind of existing method is：A kind of overlay mark schematic diagram that Fig. 3 a and Fig. 3 b, Fig. 3 a are the prior art is please referred to,
Fig. 3 b are a kind of overlay mark schematic diagram of the prior art, and overlay mark as shown in Figure 3a includes working as 200 He of layer overlay mark
First front layer overlay mark 101 is such as schemed for measuring the alignment precision for working as layer (such as contact hole) and the first front layer (such as active area)
Overlay mark shown in 3b includes working as layer overlay mark 200 and the second front layer overlay mark 102, works as layer (as contacted for measuring
Hole) and the second front layer (such as polysilicon) alignment precision.But there are two disadvantages for this method：First, needing to measure alignment in two steps
Precision, to increase the complexity of processing step；Second is that when establishing litho machine alignment precision correcting system, because can only use
The measured value of alignment precision compensates, therefore, if only used when layer (such as contact hole) and the first front layer are (such as active
Area) alignment precision compensate, then compensate after can obtain preferably when layer (such as contact hole) and the first front layer it is (such as active
Area) alignment precision, but the preferable alignment precision for working as layer (such as contact hole) and the second front layer (such as polysilicon) can not be obtained.
Therefore in integrated circuit fabrication, need to design a kind of can simultaneously improve when the alignment essence between layer and two front layers
The method of degree.
Invention content
The purpose of the present invention is to provide a kind of overlay error measurement methods, and wafer is enable to be measured in a step alignment precision
Obtained simultaneously in journey when between layer and the first front layer front layer alignment precision and when the alignment precision between layer and the second front layer, into
And the alignment precision can be improved by the alignment precision correcting system of litho machine.
Overlay error measurement method provided by the invention, including：Step S1 provides a wafer, and designs an overlay mark,
The overlay mark includes working as layer overlay mark, the first front layer overlay mark and the second front layer overlay mark；Step S2 completes institute
Photoetching, the etching technics of the first front layer of wafer are stated, the first front layer overlay mark is formed；Step S3 completes the wafer
The photoetching of the second front layer, etching technics, form the second front layer set different from the first front layer overlay mark direction
Marking；Step S4, complete the wafer when layer photoetching process, formed and described work as layer overlay mark；And step S5, lead to
It crosses alignment precision measurement method while obtaining the overlay error when between layer and first front layer and described working as layer and institute
State the overlay error between the second front layer.
Further, the first front layer overlay mark is combined into one with the second front layer overlay mark and includes
The front layer overlay mark of the overlay mark of X-direction and the overlay mark of Y-direction.
Further, the first front layer overlay mark includes the overlay mark of X-direction, and second front layer covers blaze
Note includes the overlay mark of Y-direction.
Further, the first front layer overlay mark includes the overlay mark of Y-direction, and second front layer covers blaze
Note includes the overlay mark of X-direction.
Further, further include step S6, if the overlay error is more than to require specification, present lot wafer is returned
Work, and the overlay error value is fed back into litho machine, by the alignment precision correcting system of litho machine to present lot wafer
The alignment precision when between layer and first front layer and the set when between layer and second front layer are corrected simultaneously
Carve precision；And the overlay error value is fed back to litho machine, passed through by step S7 if overlay error requirement up to specification
The alignment precision correcting system of litho machine corrects next batch wafer in the set when between layer and first front layer simultaneously
Carve precision and the alignment precision when between layer and second front layer.
Further, step S6 and S7 is further included and is worked as between layer and first front layer in the set of X-direction described in amendment
Carve precision and the alignment precision when between layer and second front layer in the Y direction.
Further, step S6 and S7, which is further included, corrects the set when between layer and first front layer in the Y direction
Carve precision and it is described when between layer and second front layer in the alignment precision of X-direction.
A kind of overlay mark of also offer of the present invention more further, including：When layer overlay mark and relative to when layer alignment
The the first front layer overlay mark and the second front layer overlay mark of label, and the first front layer overlay mark and second front layer
Overlay mark is combined into the front layer overlay mark of the overlay mark of an overlay mark and Y-direction including X-direction.
Further, the first front layer overlay mark and the overlay mark included by the second front layer overlay mark
Direction it is different.
Further, the first front layer overlay mark includes the overlay mark of X-direction, and second front layer covers blaze
Note includes the overlay mark of Y-direction.
Further, the first front layer overlay mark includes the overlay mark of Y-direction, and second front layer covers blaze
Note includes the overlay mark of X-direction.
Overlay error measurement method provided by the invention, by designing one simultaneously including before layer overlay mark, first
The overlay mark of layer overlay mark and the second front layer overlay mark, and the direction of the first front layer overlay mark is different from the second front layer
The direction of overlay mark can simultaneously obtain in a step alignment precision measurement process when the alignment between layer and the first front layer front layer
Precision and when the alignment precision between layer and the second front layer, reduces alignment precision measuring process, improves efficiency, while can be with
Improve the alignment precision by the alignment precision correcting system of litho machine.
Description of the drawings
Fig. 1 is a kind of overlay mark schematic diagram of the prior art.
Fig. 2 is a kind of overlay mark schematic diagram of the prior art.
Fig. 3 a are a kind of overlay mark schematic diagram of the prior art.
Fig. 3 b are a kind of overlay mark schematic diagram of the prior art.
Fig. 4 is the overlay error measuring method flow chart of one embodiment of the invention.
Fig. 5 a are the labeling process schematic diagram of the overlay mark of one embodiment of the invention.
Fig. 5 b are the labeling process schematic diagram of the overlay mark of one embodiment of the invention.
Fig. 5 c are the overlay mark schematic diagram of one embodiment of the invention.
Fig. 6 is the alignment precision optimization method flow chart of one embodiment of the invention.
Fig. 7 is the overlay mark schematic diagram of one embodiment of the invention.
The reference numerals are as follows for main element in figure：
200, when layer overlay mark；101, the first front layer overlay mark；102, the second front layer overlay mark.
Specific implementation mode
Referring to Fig. 4, Fig. 4 is the overlay error measuring method flow chart of one embodiment of the invention；And please refer to Fig. 5 a, figure
5b and Fig. 5 c, Fig. 5 a and Fig. 5 b are the labeling process schematic diagram of the overlay mark of one embodiment of the invention, and Fig. 5 c are the present invention one
The overlay mark schematic diagram of embodiment.As shown in figure 4, the overlay error measurement method of one embodiment of the invention includes step S1,
One wafer is provided, and designs an overlay mark, which includes when layer overlay mark, the first front layer overlay mark and second
Front layer overlay mark；Step S2 completes photoetching, the etching technics of the first front layer of wafer, forms the first front layer overlay mark
101, the first front layer overlay mark 101 as shown in Figure 5 a is the overlay mark of Y-direction；Step S3 completes the second front layer of wafer
Photoetching, etching technics, the second front layer overlay mark 102 different from 101 direction of the first front layer overlay mark is formed, such as Fig. 5 b
Shown second front layer overlay mark 102 is the overlay mark of X-direction, at this point, the first front layer including Y-direction covers blaze on wafer
Second front layer overlay mark 102 of note 101 and X-direction；Step S4, complete wafer when layer photoetching process, formed work as layer set
Marking 200 works as layer overlay mark 200 as shown in Figure 5 c, at this point, the first front layer including Y-direction covers blaze simultaneously on wafer
Remember the second front layer overlay mark 102 of 101, X-direction and works as layer overlay mark 200；Step S5 passes through alignment precision measurement method
Simultaneously obtain when between layer and the first front layer overlay error and when the overlay error between layer and the second front layer, that is, pass through alignment
Accuracy measurement method measures simultaneously when layer overlay mark 200 and the first front layer overlay mark 101 error in the Y direction and works as layer
The overlay error of overlay mark 200 and the second front layer overlay mark 102 in the X direction, the present invention is to alignment precision measurement method
It does not limit, existing alignment precision measurement method is suitable for the present invention, and above-mentioned overlay error includes X-direction offset, Y
Direction offset, X-direction wafer scaling, Y-direction wafer scaling, wafer rotation angle, wafer orthogonality, X-direction
Exposing unit scaling, Y-direction exposing unit scaling, exposing unit rotation angle, exposing unit orthogonality etc., this hair
It is bright that this is not specifically limited.As shown in Figure 5 c, the overlay error Δ X in X-direction is by working as layer overlay mark 200 and the second layer
Overlay mark 102 is measured namely Δ X=(X2-X1)/2；And Y-direction error delta Y is then by working as layer overlay mark 200 and
One layer of overlay mark 101 is measured namely Δ Y=(Y2-Y1)/2.
In this way, the overlay error measurement method of the present invention, by designing one simultaneously including before layer overlay mark, first
The overlay mark of layer overlay mark and the second front layer overlay mark, and the direction of the first front layer overlay mark is different from the second front layer
The direction of overlay mark can simultaneously obtain in a step alignment precision measurement process when the alignment between layer and the first front layer front layer
Precision and when the alignment precision between layer and the second front layer, reduces alignment precision measuring process, improves efficiency.
Further, referring to Fig. 6, Fig. 6 is the alignment precision optimization method flow chart of one embodiment of the invention.Such as figure
Shown in 6, the present invention also provides a kind of alignment precision optimization methods, on the basis of above-mentioned overlay error measurement method further also
It including step S6, if the overlay error is more than to require specification, does over again to present lot wafer, and by the overlay error value
Feed back to litho machine, present lot wafer is corrected simultaneously by the alignment precision correcting system of litho machine it is described when layer with it is described
Alignment precision between first front layer and the alignment precision when between layer and second front layer.As shown in Figure 5 c, such as Δ X
It is more than to require specification with Δ Y, then corrects when alignment precision between layer and the first front layer in the Y direction and described when layer and described the
In the alignment precision of X-direction between two front layers.To improve simultaneously when the alignment precision between layer and two front layers, life is improved
Produce efficiency.Certainly in an embodiment of the present invention, can also only have there are overlay error in X-direction, i.e. Δ X is more than to require to advise
Lattice, or, there are overlay error in Y-direction, i.e. Δ Y is more than to require specification, then the alignment precision correcting system of litho machine is real at this time
Border only correct when between layer and the first front layer alignment precision or when the alignment precision between layer and the second front layer.The present invention
Alignment precision optimization method further comprise step S7, if overlay error requirement up to specification, by the overlay error
Value feeds back to litho machine, is corrected simultaneously to next batch wafer by the alignment precision correcting system of litho machine described when layer and institute
State the alignment precision between the first front layer and the alignment precision when between layer and second front layer.Above-mentioned specification requirement can
It is set according to actual product demand, the present invention does not limit this.
Overlay mark as shown in Figure 5 c, the first front layer overlay mark 101 are the overlay mark of Y-direction, the second front layer set
Marking 102 is the overlay mark of X-direction, but the present invention does not limit this, is implemented referring to Fig. 7, Fig. 7 is the present invention one
The overlay mark schematic diagram of example, as shown in fig. 7, the overlay mark of the first front layer overlay mark 101 or X-direction, before second
Layer overlay mark 102 or Y-direction overlay mark, specific first front layer overlay mark 101 be Y-direction overlay mark or
The overlay mark of X-direction, the second front layer overlay mark 102 can be according to realities for the overlay mark of X-direction or the overlay mark of Y-direction
The demand of border product is set, for example, if the first front layer figure relative to when layer need consider X-direction on precision if can
To set the first front layer overlay mark to the overlay mark of X-direction, then the second front layer overlay mark is set as the alignment of Y-direction
Label；If the first front layer figure relative to when layer need consider Y-direction on precision if can be by the first front layer overlay mark
It is set as the overlay mark of Y-direction, then the second front layer overlay mark is set as the overlay mark of X-direction.For the present invention, as long as
The direction difference of overlay mark included by first front layer overlay mark 101 and the second front layer overlay mark 102.In this hair
In a bright embodiment, it includes X-direction that the first front layer overlay mark 101 and the second front layer overlay mark 102, which are combined into one,
The front layer overlay mark of overlay mark and the overlay mark of Y-direction.As shown in Figure 5 c, the first front layer overlay mark 101 is Y-direction
Overlay mark, the second front layer overlay mark 102 be X-direction overlay mark；As shown in fig. 7, the first front layer overlay mark 101
For the overlay mark of X-direction, the second front layer overlay mark 102 is the overlay mark of Y-direction.In this way, composition includes the set of X-direction
The front layer overlay mark of marking and the overlay mark of Y-direction, you can by being obtained simultaneously in a step alignment precision measurement process
When between layer and the first front layer front layer alignment precision and when the alignment precision between layer and the second front layer.And current photoetching
Machine alignment precision correcting system, the measured value for being used only once alignment precision compensate, due to the overlay mark of the present invention
Include the overlay mark when layer overlay mark, the first front layer overlay mark and the second front layer overlay mark simultaneously, can once cover
The alignment precision worked as between layer and the first front layer front layer is obtained during quarter precision measure simultaneously and is worked as between layer and the second front layer
Alignment precision, therefore can compensate simultaneously when the alignment precision between layer and two front layers.
For overlay mark as shown in Figure 7, step S6 and S7, which are corrected, to be worked as between layer and the first front layer in the alignment of X-direction
Precision and the alignment precision when between layer and second front layer in the Y direction.
In conclusion by designing one simultaneously including working as layer overlay mark, the first front layer overlay mark and the second front layer
The overlay mark of overlay mark can simultaneously obtain in an alignment precision measurement process when the alignment between layer and the first front layer
Precision and when the alignment precision between layer and the second front layer；Second is that using the correcting system of litho machine, while correcting present lot
Wafer or next batch wafer when between layer and the first front layer alignment precision and when the alignment essence between layer and the second front layer
Degree improves production efficiency to improve simultaneously when the alignment precision between layer and two front layers.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (11)
1. a kind of overlay error measurement method, which is characterized in that including：
Step S1 provides a wafer, and designs an overlay mark, and the overlay mark includes when layer overlay mark, the first front layer
Overlay mark and the second front layer overlay mark；
Step S2 completes photoetching, the etching technics of the first front layer of the wafer, forms the first front layer overlay mark；
Step S3 completes photoetching, the etching technics of the second front layer of the wafer, is formed and first front layer overlay mark side
To different the second front layer overlay marks；
Step S4, complete the wafer when layer photoetching process, formed and described work as layer overlay mark；And
Step S5, obtained simultaneously by alignment precision measurement method the overlay error when between layer and first front layer and
The overlay error when between layer and second front layer.
2. overlay error measurement method according to claim 1, which is characterized in that the first front layer overlay mark and institute
State the front layer alignment that the second front layer overlay mark is combined into the overlay mark of an overlay mark and Y-direction including X-direction
Label.
3. according to claims 1 or 2 any one of them overlay error measurement method, which is characterized in that the first front layer set
Marking includes the overlay mark of X-direction, and the second front layer overlay mark includes the overlay mark of Y-direction.
4. according to claims 1 or 2 any one of them overlay error measurement method, which is characterized in that the first front layer set
Marking includes the overlay mark of Y-direction, and the second front layer overlay mark includes the overlay mark of X-direction.
5. overlay error measurement method according to claim 1, which is characterized in that further include step S6, if the alignment
Error is more than to require specification, then does over again to present lot wafer, and the overlay error value is fed back to litho machine, pass through photoetching
The alignment precision correcting system of machine corrects present lot wafer the alignment essence when between layer and first front layer simultaneously
Degree and the alignment precision when between layer and second front layer；And step S7, if overlay error requirement up to specification,
The overlay error value is fed back into litho machine, next batch wafer is repaiied simultaneously by the alignment precision correcting system of litho machine
The just described alignment precision when between layer and first front layer and the alignment precision when between layer and second front layer.
6. overlay error measurement method according to claim 5, which is characterized in that step S6 and S7 are further included described in amendment
When between layer and first front layer the alignment precision of X-direction and it is described when between layer and second front layer in the Y direction
Alignment precision.
7. overlay error measurement method according to claim 5, which is characterized in that step S6 and S7 are further included described in amendment
When between layer and first front layer in the Y direction alignment precision and it is described when between layer and second front layer in X-direction
Alignment precision.
8. a kind of overlay mark, which is characterized in that including：When layer overlay mark and relative to described when the first of layer overlay mark
Front layer overlay mark and the second front layer overlay mark, and the first front layer overlay mark and the second front layer overlay mark group
Synthesize the front layer overlay mark of the overlay mark of an overlay mark and Y-direction including X-direction.
9. overlay mark according to claim 8, which is characterized in that before the first front layer overlay mark and described second
The direction of overlay mark included by layer overlay mark is different.
10. according to claim 8 or 9 any one of them overlay marks, which is characterized in that the first front layer overlay mark packet
The overlay mark of X-direction is included, the second front layer overlay mark includes the overlay mark of Y-direction.
11. according to claim 8 or 9 any one of them overlay marks, which is characterized in that the first front layer overlay mark packet
The overlay mark of Y-direction is included, the second front layer overlay mark includes the overlay mark of X-direction.
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| CN201810330305.7A CN108628107A (en) | 2018-04-13 | 2018-04-13 | Overlay error measurement method and overlay mark |
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| CN201810330305.7A CN108628107A (en) | 2018-04-13 | 2018-04-13 | Overlay error measurement method and overlay mark |
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| CN110620057A (en) * | 2019-09-12 | 2019-12-27 | 中国科学院微电子研究所 | Overlay error compensation method and system of three-dimensional device |
| CN113109997A (en) * | 2021-03-18 | 2021-07-13 | 上海信及光子集成技术有限公司 | Method and structure for measuring photoetching overlay error before and after epitaxy |
| WO2022077941A1 (en) * | 2020-10-15 | 2022-04-21 | 长鑫存储技术有限公司 | Method and device for controlling overlay accuracy |
| WO2022205747A1 (en) * | 2021-04-02 | 2022-10-06 | 长鑫存储技术有限公司 | Alignment and measurement mark structure and alignment and measurement method |
| CN115877672A (en) * | 2023-01-09 | 2023-03-31 | 合肥晶合集成电路股份有限公司 | Overlay accuracy acquisition method and correction method |
| CN116149146A (en) * | 2023-04-21 | 2023-05-23 | 长鑫存储技术有限公司 | Process control method, system and computer equipment |
| US11803128B2 (en) | 2020-10-15 | 2023-10-31 | Changxin Memory Technologies, Inc. | Control method and device of overlay accuracy |
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| US11803128B2 (en) | 2020-10-15 | 2023-10-31 | Changxin Memory Technologies, Inc. | Control method and device of overlay accuracy |
| CN113109997A (en) * | 2021-03-18 | 2021-07-13 | 上海信及光子集成技术有限公司 | Method and structure for measuring photoetching overlay error before and after epitaxy |
| WO2022205747A1 (en) * | 2021-04-02 | 2022-10-06 | 长鑫存储技术有限公司 | Alignment and measurement mark structure and alignment and measurement method |
| CN115877672A (en) * | 2023-01-09 | 2023-03-31 | 合肥晶合集成电路股份有限公司 | Overlay accuracy acquisition method and correction method |
| CN116149146A (en) * | 2023-04-21 | 2023-05-23 | 长鑫存储技术有限公司 | Process control method, system and computer equipment |
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