CN109425301A - A kind of measuring device and method of thicknesses of layers - Google Patents
A kind of measuring device and method of thicknesses of layers Download PDFInfo
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- CN109425301A CN109425301A CN201710720432.3A CN201710720432A CN109425301A CN 109425301 A CN109425301 A CN 109425301A CN 201710720432 A CN201710720432 A CN 201710720432A CN 109425301 A CN109425301 A CN 109425301A
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- wafer
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- described image
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides a kind of measuring device of thicknesses of layers and methods.It include several different images containing the calibration mark in the database the described method includes: establishing calibration mark database, the shape of the calibration mark between each described image is identical；The wafer for needing to measure is provided, and by the calibration mark and the alignment mark in the wafer in several described images be aligned and compared with, if the similarity of the alignment mark in calibration mark and the wafer in any described image reaches sets requirement, it then determines the position for needing to carry out thicknesses of layers measurement on wafer, and carries out the measurement of thicknesses of layers on wafer.It can be failed (alignment fail) to avoid calibration by the method or lose a problem, improve the efficiency and precision of measurement.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to the measuring device and method of a kind of thicknesses of layers.
Background technique
Ic manufacturing technology is a complicated technique, and technology innovation is quickly.Characterize ic manufacturing technology
One key parameter is minimum feature size, i.e. critical size (critical dimension, CD), the size of critical size from
Till now 0.13 micron of initial 125 microns, even more small, the reduction just because of critical size just makes each core
On piece is arranged million devices and is possibly realized.
With the continuous diminution of dimensions of semiconductor devices, characterization and measurement to device size bring challenge, at present partly
The thickness of the film layer of conductor device core on piece is usually completed by measurement board, but current method is not only time-consuming, and
And it is also easy to cause the omission of thickness measuring.
Therefore, it exists in the prior art various drawbacks, the problem of above-mentioned drawback becomes urgent need to resolve, is surveyed with further increasing
The efficiency and precision of amount.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of measurement methods of thicknesses of layers, which comprises
Calibration mark database is established, includes several different images containing the calibration mark in the database, respectively
The shape of the calibration mark between a described image is identical；
It provides and needs the wafer that measures, and by the calibration mark in several described images and the alignment in the wafer
Label is aligned and is compared, if the calibration mark in any described image is similar to the alignment mark in the wafer
Degree reaches sets requirement, it is determined that needs to carry out the position of thicknesses of layers measurement on wafer, and carries out thicknesses of layers on wafer
Measurement.
Optionally it is determined that the method for the position for needing thicknesses of layers to measure includes:
The adjustment location for needing to measure on wafer is determined by coordinate.
Optionally, the method that the adjustment location for needing to measure on wafer is determined by coordinate includes:
It is established in described image with the calibration mark in the database for reference and corresponds to measurement position in the wafer
Relative coordinate of the position relative to the calibration mark；
Using the alignment mark as reference in the wafer, and in conjunction with according to the relative coordinate it is obtained it is opposite away from
From the adjustment location for needing to measure on the determination wafer.
Optionally, with figure, the tone of described image, described image around the calibration mark between described image
Color difference, described image the brightness of clarity, described image and one of the transparency of described image or a variety of differences.
Optionally, the calibration mark includes square pattern and the cross pattern in the square pattern.
Optionally, if the calibration mark in all described images and the similarity of the alignment mark in the wafer are equal
Do not reach sets requirement, then stops to measure.
Optionally, several described images are the image of the calibration mark of different film layers in the same wafer.
The present invention also provides a kind of measuring device of thicknesses of layers, described device includes:
Storage unit, the school for storing several different images containing calibration mark, between each described image
The shape of fiducial mark note is identical；
Comparing unit is calibrated, pair in wafer for measuring the calibration mark in several described images with needs
Fiducial mark is remembered row alignment into and is compared, and in the calibration mark in wherein any described image and the alignment mark in the wafer
When similarity reaches sets requirement, the judging result measured is exported.
Optionally, described device further include:
Measurement unit, for after receiving the judging result measured, determine needed on the wafer into
Row thicknesses of layers measure position, and on the wafer carry out thicknesses of layers measurement.
Optionally, the measurement unit includes:
Subelement is established, corresponds to the crystalline substance for establishing in described image with the calibration mark in the database for reference
Relative coordinate of the position of measurement position relative to the calibration mark in circle；
It determines subelement, is used in the wafer using the alignment mark as reference, and in conjunction with according to the opposite seat
It marks relative distance obtained and determines the adjustment location for needing to measure on the wafer.
Optionally, with figure, the tone of described image, described image around the calibration mark between described image
Color difference, described image the brightness of clarity, described image and one of the transparency of described image or a variety of differences.
Optionally, the calibration mark includes square pattern and the cross pattern in the square pattern.
Optionally, several described images are the image of the calibration mark of different film layers in the same wafer.
In conclusion method for measuring thickness of the present invention includes establishing calibration mark database, wrapped in the database
Several different images containing the calibration mark are included, the shape of the calibration mark between each described image is identical,
In the similarity of alignment mark in calibration mark and wafer in any described image reach sets requirement, it is determined that on wafer
It needs to carry out the position of thicknesses of layers measurement, and carries out the measurement of thicknesses of layers on wafer, can be eliminated by the method
The some differences substantially of wafer bring itself, such as color difference, image are fuzzy etc., to avoid calibration failure (alignment
Fail) or a problem is lost, improves the efficiency and precision of measurement.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the process flow chart of method for measuring thickness of the present invention；
Fig. 2 shows the structural schematic diagrams of the image containing calibration mark in one embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
It describes to send out herein with reference to the cross-sectional view of the schematic diagram as desirable embodiment (and intermediate structure) of the invention
Bright embodiment.As a result, it is contemplated that from the variation of shown shape as caused by such as manufacturing technology and/or tolerance.Therefore,
The embodiment of the present invention should not necessarily be limited to the specific shape in area shown here, but including due to for example manufacturing caused shape
Shape deviation.For example, being shown as the injection region of rectangle usually has round or bending features and/or implantation concentration ladder at its edge
Degree, rather than binary from injection region to non-injection regions changes.Equally, which can lead to by the disposal area that injection is formed
Some injections in area between the surface passed through when injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the invention.
In order to thoroughly understand the present invention, detailed structure will be proposed in following description, to illustrate proposition of the present invention
Technical solution.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can be with
With other embodiments.
The measurement method of thickness described in technique includes: at present
Step 1: on thickness (thickness) measurement platform in foundries, measurement when, first needs to calibrate
(alignment), i.e., according to calibration mark (the cross figure of the crystal grain (die) retained inside known the current set of menu (recipe)
As (image)) (single) feature and need measuring wafer crystal grain itself (die) alignment mark (cross image
(image)) it is compared, if similarity is high, just passes through, then carry out the measurement of adjustment location.Otherwise fail, suspension amount
It surveys.
Step 2: after the base calibration (alignment) of step 1 is finished, carry out adjustment location measurement, its principle and
Step 1 is equally also to go for corresponding to the adjustment location of requirement there are location drawing picture according to menu (recipe) on board itself,
If similarity is high, just pass through, then carries out the measurement of adjustment location.Otherwise fail, measurement can lack.
Establishing in measurement board has measuring system, and corresponding measurement menu is provided in measuring system.Wherein, due to every
A measurement menu requires to be established according to target requirement, therefore all for online thickness (inline thickness) measurement dish
Single (recipe) can be very huge, such as nearly has general every month 200 menus (recipe) to build, so to pass through cost
A large amount of manpower and time go to build female formula measurement menu (recipe).
Secondly, for technical research (TD) foundries (FAB) one may be brought to wafer because experiment divides (split)
A little substantial differences, such as color difference, image are fuzzy etc., to can such as fail by calibration because measuring menu in terms of measurement
(alignment fail) or a problem is lost, and then influences experiment progress.By finding current this mould to step 1 and 2 analyses
Formula is excessively single, if wafer itself is widely different, just will fail or adjustment location is inaccurate, bring many inconvenience to production.
Since newly-built menu (recipes) quantity that measures is larger, each measurement menu processing time is very long, it is therefore desirable to consume
Take a large amount of time.On-line measurement failure rate is up to 5% at present, far more than acceptable degree.
For this purpose, the present invention provides a kind of method for measuring thickness, which is characterized in that the described method includes:
Calibration mark database is established, includes several different images containing the calibration mark in the database, respectively
The shape of the calibration mark between a described image is identical；
It provides and needs the wafer that measures, and by the calibration mark in several described images and the alignment in the wafer
Label is aligned and is compared, if the calibration mark in any described image is similar to the alignment mark in the wafer
Degree reaches sets requirement, it is determined that needs to carry out the position of thicknesses of layers measurement on wafer, and carries out thicknesses of layers on wafer
Measurement.
The calibration mark includes square pattern and the cross pattern in the square pattern.
Wherein, tone with figure, described image around the calibration mark between described image, described image
One of color difference, the clarity of described image, transparency of the brightness of described image and described image or a variety of differences.It is logical
Cross and save multiple calibration marks (the cross images of different layers) in the database, can overcome wafer difference itself because
Element can pass through in turn, avoid and survey the problem of result can lack.
In conclusion method for measuring thickness of the present invention includes establishing calibration mark database, wrapped in the database
Several different images containing the calibration mark are included, the shape of the calibration mark between each described image is identical,
In the similarity of alignment mark in calibration mark and wafer in any described image reach sets requirement, it is determined that on wafer
It needs to carry out the position of thicknesses of layers measurement, and carries out the measurement of thicknesses of layers on wafer, can be eliminated by the method
The some differences substantially of wafer bring itself, such as color difference, image are fuzzy etc., to avoid calibration failure (alignment
Fail) or a problem is lost, improves the efficiency and precision of measurement.
Embodiment one
Below with reference to the accompanying drawings method for measuring thickness of the invention is described in detail, Fig. 1 shows thickness of the present invention
The process flow chart of measurement method；Fig. 2 shows the structural schematic diagrams of the image containing calibration mark in one embodiment of the invention.
The present invention provides a kind of measurement method of thicknesses of layers, as shown in Figure 1, which comprises
Step S1: establishing calibration mark database, includes several differences containing the calibration mark in the database
The shape of image, the calibration mark between each described image is identical；
Step S2: providing and need the wafer that measures, and by several described images the calibration mark and the wafer
In alignment mark be aligned and compared, if in the calibration mark in any described image and the wafer to fiducial mark
The similarity of note reaches sets requirement, it is determined that needs to carry out the position of thicknesses of layers measurement on wafer, and carries out on wafer
The measurement of thicknesses of layers.
The method for measuring thickness is further described with reference to the accompanying drawing.
Firstly, executing step 1, calibration mark database is established, includes several in the database containing calibration mark
The shape of the different images of note, the calibration mark between each described image is identical.
In order to solve the problems, such as current the method, by the figure containing calibration mark single in current database
Picture is improved, several different images for containing the calibration mark are increased, more by saving in the database
A calibration mark (the cross images of different layers) can overcome the factor of wafer difference itself and then can pass through, avoid
The problem of measurement can lack.
Wherein, the shape of the calibration mark described in described image is identical, has the calibration between described image
The brightness of the clarity, described image of figure, the tone of described image, the color difference of described image, described image around marking
And one of transparency of described image or a variety of differences.It can establish different differences under different condition by the method
Data image library, some differences substantially can be brought by eliminating on wafer, such as color difference, and image is fuzzy etc., so that calibration be avoided to lose
It loses (alignment fail) or loses a problem, improve the efficiency and precision of measurement.
As shown in Fig. 2, list some described images in the figure, due to the difference of wafer itself in described image,
Different images can be embodied, but as long as the alignment mark in wafer and one of those can similarity with higher can
To reach sets requirement, and then promotes a measurement menu (recipe) and cope with multiple condition variation wafers measurement success rates.
It wherein need to only be built with wafer once in the establishment process of the database, the measurement menu of other different layers
(recipe) it can build up in advance together in passing.Such as 15 same products measure menu in one embodiment
(recipe), it is only necessary to spend 1 hour.
Execute step 2, provide and need the wafer that measures, and by several described images the calibration mark with it is described
Alignment mark in wafer is aligned and is compared, if the calibration mark in any described image and pair in the wafer
The similarity of fiducial mark note reaches sets requirement, it is determined that needs to carry out the position of thicknesses of layers measurement on wafer, and on wafer
Carry out the measurement of thicknesses of layers.
Wherein, the comparison can be only by the alignment mark and the calibration mark number in the wafer for needing to measure
It is compared according to the calibration mark in library, but the background can impact the comparison.
Wherein by the calibration mark in the alignment mark and the calibration mark database in the wafer for needing to measure
It compares and also inevitably needs for surrounding part background to be divided into in the range of comparison, therefore is described in order to eliminate
The influence of background bring needs to store various images present in each layer into the database, includes several to be formed
Different images containing the calibration mark avoid measuring missing so as to improve percent of pass.
Wherein the comparison can choose several contrast districts or right in the calibration mark with character shape
It is carried out one by one than point, and by the contrast points in the calibration mark of alignment mark and described image in the wafer to be measured
Comparison determines the calibration mark of described image and the similarity of the alignment mark in the wafer.
Wherein, the selection of the contrast points can be chosen according to the actual situation, usually choose the spy with identification
Region or point are levied, is compared so as to significantly more efficient, while improving the accuracy compared.
Wherein, the calibration mark includes square pattern and the cross pattern in the square pattern.It needs
Bright is that the calibration mark is not limited to the example, can also be its deformation.
Optionally, if the correction marking of any described image and the similarity of the alignment mark in the wafer reach
Sets requirement then executes measurement step.If the correction marking of any one described image and the alignment mark in the wafer
Similarity does not all reach sets requirement, then stops to measure.
Wherein, the sets requirement of the similarity is not limited to a certain numberical range, such as similarity needs is required to reach
To 90% or more, the setting of the similarity can be set according to actual needs, and details are not described herein.
Specifically, in one embodiment of the invention, it after the wafer for needing to measure is provided, needs to be measured
Alignment mark in film layer is scanned, and the pattern after scanning is extracted in the calibration mark database or in addition new
In the database built, with facilitate the calibration mark in the calibration mark database and the alignment mark in the wafer into
Row compares.
When the calibration mark in described image and the similarity of alignment mark in the wafer reach sets requirement, then really
Determine the position for needing to carry out thicknesses of layers measurement on wafer, and carries out the measurement of thicknesses of layers on wafer.
Determine that the method for needing the position of thicknesses of layers measurement includes:
The adjustment location for needing to measure on wafer is determined by coordinate.
The method that the adjustment location for needing to measure on wafer is determined by coordinate includes:
It is established in described image with the calibration mark in the database for reference and corresponds to measurement position in the wafer
Relative coordinate of the position relative to the calibration mark；
Using the alignment mark as reference in the wafer, and in conjunction with according to the relative coordinate it is obtained it is opposite away from
From the adjustment location for needing to measure on the determination wafer.
Specifically, when establishing measurement menu, first the coordinate of adjustment location is left, with the calibration mark in the database
It is denoted as referring to coordinate system is established, inputs the coordinate after establishing coordinate system, surveyed with determining to correspond in described image in the wafer
The position of position is measured, while corresponding to phase of the position of measurement position in the wafer relative to the calibration mark in described image
It is also determining for adjusting the distance.
Then using the alignment mark as reference in the wafer, and in conjunction with according to relative coordinate phase obtained
It adjusts the distance the adjustment location for determining and needing to measure on the wafer.Such as the alignment mark on wafer and need adjustment location away from
From determining mathematical relationship, the adjustment location on wafer is determined according to the mathematical relationship with the relative distance presence in image.
Such as described image is obtained image after the wafer reduces 100 times, the thus school described in described image
Correspond in the wafer the distance between position of measurement position in fiducial mark note and image is 100 μm, then in conjunction with the distance,
Using the alignment mark as reference in wafer, amplify 100 times for 100 μm of the distance, so that it is determined that needing on the wafer
The adjustment location of measurement.Certainly, the distance is directive, is vector.
In the present invention for searching adjustment location, uses instead and position is gone for by coordinate, primary success can be reached, and
Speed promotes effect, avoids measurement that from lacking.
After determining the adjustment location, then the measurement of thickness is carried out in determining adjustment location, wherein the thickness
Measurement method can select conventional method, details are not described herein.
So far, the introduction of the correlation step of the measurement method of the embodiment of the present invention is completed.After the above step, may be used also
To include other correlation steps, details are not described herein again.Also, in addition to the foregoing steps, the measurement method of the present embodiment may be used also
To include other steps among above-mentioned each step or between different steps, these steps can be by the prior art
Various techniques realize that details are not described herein again.
In conclusion method for measuring thickness of the present invention includes establishing calibration mark database, wrapped in the database
Several different images containing the calibration mark are included, the shape of the calibration mark between each described image is identical,
In the similarity of alignment mark in calibration mark and wafer in any described image reach sets requirement, it is determined that on wafer
It needs to carry out the position of thicknesses of layers measurement, and carries out the measurement of thicknesses of layers on wafer, can be eliminated by the method
The some differences substantially of wafer bring itself, such as color difference, image are fuzzy etc., to avoid calibration failure (alignment
Fail) or a problem is lost, improves the efficiency and precision of measurement.
Embodiment two
The present invention also provides a kind of devices of thickness measure, for executing method described in embodiment one, described device
Include:
Storage unit, the school for storing several different images containing calibration mark, between each described image
The shape of fiducial mark note is identical；
Comparing unit is calibrated, pair in wafer for measuring the calibration mark in several described images with needs
Fiducial mark is remembered row alignment into and is compared, and in the calibration mark in wherein any described image and the alignment mark in the wafer
When similarity reaches sets requirement, the judging result measured is exported.
Optionally, described device further include:
Measurement unit, for after receiving the judging result measured, determine needed on the wafer into
Row thicknesses of layers measure position, and on the wafer carry out thicknesses of layers measurement.
Optionally, the measurement unit includes:
Subelement is established, corresponds to the crystalline substance for establishing in described image with the calibration mark in the database for reference
Relative coordinate of the position of measurement position relative to the calibration mark in circle；
It determines subelement, is used in the wafer using the alignment mark as reference, and in conjunction with according to the opposite seat
It marks relative distance obtained and determines the adjustment location for needing to measure on the wafer.
In order to solve the problems, such as current the method, by the figure containing calibration mark single in current database
Picture is improved, several different images for containing the calibration mark are increased, more by saving in the database
A calibration mark (the cross images of different layers) can overcome the factor of wafer difference itself and then can pass through, avoid
The problem of measurement can lack.
Wherein, the shape of the calibration mark described in described image is identical, has the calibration between described image
The brightness of the clarity, described image of figure, the tone of described image, the color difference of described image, described image around marking
And one of transparency of described image or a variety of differences.It can establish different differences under different condition by the method
Data image library, some differences substantially can be brought by eliminating on wafer, such as color difference, and image is fuzzy etc., so that calibration be avoided to lose
It loses (alignment fail) or loses a problem, improve the efficiency and precision of measurement.
As shown in Fig. 2, list some described images in the figure, due to the difference of wafer itself in described image,
Different images can be embodied, but as long as the alignment mark in wafer and one of those can similarity with higher can
To reach sets requirement, and then promotes a measurement menu (recipe) and cope with multiple condition variation wafers measurement success rates.
It wherein need to only be built with wafer once in the establishment process of the database, the measurement menu of other different layers
(recipe) it can build up in advance together in passing.Such as 15 same products measure menu in one embodiment
(recipe), it is only necessary to spend 1 hour.
Wherein the comparison can choose several contrast districts or right in the calibration mark with character shape
It is carried out one by one than point, and by the contrast points in the calibration mark of alignment mark and described image in the wafer to be measured
Comparison determines the similarity of the alignment mark in described image and the wafer.
Wherein, the selection of the contrast points can be chosen according to the actual situation, usually choose the spy with identification
Region or point are levied, is compared so as to significantly more efficient, while improving the accuracy compared.
Wherein, the calibration mark includes square pattern and the cross pattern in the square pattern.It needs
Bright is that the calibration mark is not limited to the example, can also be its deformation.
Position is gone for by coordinate in the measurement unit, primary success can be reached, and speed promotes effect, keeps away
Exempting from measurement can lack.
Storage unit in thickness measurement system of the present invention, for storing several different figures containing calibration mark
The shape of picture, the calibration mark between each described image is identical；It can establish under different condition not by the system
With variance data image library, to eliminate some differences substantially of wafer bring itself, such as color difference, image is fuzzy etc., thus
It avoids calibration failure (alignment fail) or loses a problem, improve the efficiency and precision of measurement.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (13)
1. a kind of measurement method of thicknesses of layers, which is characterized in that the described method includes:
Calibration mark database is established, includes several different images containing the calibration mark, Ge Gesuo in the database
The shape for stating the calibration mark between image is identical；
It provides and needs the wafer that measures, and by the calibration mark in several described images and the alignment mark in the wafer
It is aligned and is compared, if the calibration mark in any described image and the similarity of the alignment mark in the wafer reach
To sets requirement, it is determined that need to carry out the position of thicknesses of layers measurement on wafer, and carry out the amount of thicknesses of layers on wafer
It surveys.
2. the method according to claim 1, wherein determining the method packet for the position for needing thicknesses of layers to measure
It includes:
The adjustment location for needing to measure on wafer is determined by coordinate.
3. according to the method described in claim 2, it is characterized in that, determining the adjustment location for needing to measure on wafer by coordinate
Method include:
The position that corresponds in wafer measurement position is established in described image with the calibration mark in the database for reference
Relative coordinate relative to the calibration mark；
Using the alignment mark as reference in the wafer, and in conjunction with true according to relative coordinate relative distance obtained
The adjustment location for needing to measure on the fixed wafer.
4. the method according to claim 1, wherein with the figure around the calibration mark between described image
The brightness and described image of shape, the tone of described image, the color difference of described image, the clarity of described image, described image
One of transparency or a variety of differences.
5. the method according to claim 1, wherein the calibration mark include square pattern and be located at the side
Cross pattern in shape pattern.
6. the method according to claim 1, wherein if the calibration mark in all described images with it is described
The similarity of alignment mark in wafer does not reach sets requirement, then stops to measure.
7. the method according to claim 1, wherein several described images are different film layers in the same wafer
Calibration mark image.
8. a kind of measuring device of thicknesses of layers, which is characterized in that described device includes:
Storage unit, the calibration mark for storing several different images containing calibration mark, between each described image
The shape of note is identical；
Calibrate comparing unit, for by the calibration mark in several described images and need in the wafer that measures to fiducial mark
It remembers row alignment into and compares, and is similar to the alignment mark in the wafer in the calibration mark in wherein any described image
When degree reaches sets requirement, the judging result measured is exported.
9. the device of thickness measure according to claim 8, which is characterized in that described device further include:
Measurement unit, for determining and needing to carry out film on the wafer after receiving the judging result measured
Layer thickness measuring position, and on the wafer carry out thicknesses of layers measurement.
10. the device of thickness measure according to claim 9, which is characterized in that the measurement unit includes:
Subelement is established, is corresponded in the wafer for being established in described image with the calibration mark in the database for reference
Relative coordinate of the position of measurement position relative to the calibration mark；
It determines subelement, is used in the wafer using the alignment mark as reference, and in conjunction with according to the relative coordinate institute
The relative distance of acquisition determines the adjustment location for needing to measure on the wafer.
11. the device of thickness measure according to claim 8, which is characterized in that have the calibration between described image
The brightness of the clarity, described image of figure, the tone of described image, the color difference of described image, described image around marking
And one of transparency of described image or a variety of differences.
12. the device of thickness measure according to claim 8, which is characterized in that the calibration mark includes square pattern
With the cross pattern being located in the square pattern.
13. the device of thickness measure according to claim 8, which is characterized in that several described images are the same crystalline substance
The image of the calibration mark of different film layers in circle.
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| CN112985276A (en) * | 2019-12-13 | 2021-06-18 | 万润科技精机(昆山)有限公司 | Thickness measuring method and thickness measuring system for circuit board |
| CN113310442A (en) * | 2021-04-27 | 2021-08-27 | 长江存储科技有限责任公司 | Thickness measuring method and device |
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