CN104934413B - Overlapping alignment marks and the substrate with overlapping alignment mark - Google Patents
Overlapping alignment marks and the substrate with overlapping alignment mark Download PDFInfo
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- CN104934413B CN104934413B CN201410100759.7A CN201410100759A CN104934413B CN 104934413 B CN104934413 B CN 104934413B CN 201410100759 A CN201410100759 A CN 201410100759A CN 104934413 B CN104934413 B CN 104934413B
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Abstract
This application provides a kind of overlapping alignment mark and the substrate marked with the overlapping alignment.Overlapping alignment mark is arranged on substrate, and substrate includes basal layer and the multiple lamellas being arranged on basal layer, and overlapping alignment mark includes：Basal layer alignment mark, basal layer alignment mark are arranged on the marked region of basal layer；Lamella alignment mark, each lamella alignment mark is arranged on corresponding lamella, wherein, at least two lamellas in each lamella of lamella alignment mark are provided with and pass through the position relationship realization and the alignment of basal layer between corresponding lamella alignment mark and same basal layer alignment mark.Under the overlapping alignment label placement mode of the application, the region of more marked regions such as marking groove is released, and has saved the marked region that overlapping alignment mark takes.
Description
Technical field
The application is related to technical field of manufacturing semiconductors, is marked more particularly, to a kind of overlapping alignment and heavy with this
The substrate of folded alignment mark.
Background technology
In semiconductor fabrication process, especially in the manufacturing process of the IC-components including micro pattern, photoetching
And detection technique is wherein most crucial part.In semiconductor chip, transistor, electric capacity, resistance and metal carbonyl conducting layer it is each
Kind physical unit is arranged in crystal column surface or top layer.Different components and its interconnection line can in IC design ionization into
Many layers, and every layer is all by many plane characteristic figure constitutions.Photoetching process is exactly to realize plane design drawing in substrate surface
Shape is changed.In photo-mask process, photoresist film is coated in after on patterned layer in Semiconductor substrate, this is photic
Resist film is exposed and developed, so as to form photoresist pattern on patterned layer.The layer utilizes photoresist
Agent pattern is etched as etching mask, so as to form required pattern on a semiconductor substrate.When working as IC-components
When layer and preceding layer pattern are formed by photoetching process, when layer pattern should be accurately aligned relative to preceding layer pattern.
When the accurate alignment between layer and preceding layer pattern is generally obtained by reticle alignment and wafer aligned, these are aligned
Carried out in the exposed portion of lithographic equipment.The alignment of pattern corrects according to lamination correction data, and these data pass through in photoetching
The measuring lamination step performed in equipment obtains.The alignment error of pattern utilizes the marked region for being formed at Semiconductor substrate（Such as
Waffer edge or marking groove）On overlapping alignment mark and measure.
Fig. 1 shows the layout drawing of overlapping alignment mark in the prior art.In Fig. 1, set on semiconductor substrate 1 more
Semiconductor substrate 1 is divided into multiple Dai Zhi areas 2 by individual marking groove 3, each marking groove 3, and overlay mark area is provided with marking groove 3
4（It is not to be drawn according to the actual proportionate relationship of each several part in Fig. 1, but in order to clearly illustrate stacking mark
The position in area 4, the Area processing in overlay mark area 4 is obtained relatively large）.
Fig. 2 shows box in box in the prior art（box in box）The structure chart of the overlapping alignment mark of form.Reference
Fig. 2, the overlapping alignment mark 10 of box-like formula includes the first overlay mark 11 and the second overlay mark 12 in the box.First lamination mark
Note 11 is formed at the first wafer layer of Semiconductor substrate（Front layer）On, the first overlay mark 11 has rectangular shape.Second lamination
Second wafer layer of the mark 12 on the first wafer layer（Work as layer）Upper formation, and the second overlay mark 12 has less than first
The rectangular shape of overlay mark 11.In the prior art, passing through the first overlay mark 11 of measurement and the second lamination mark shown in Fig. 2
The distance of X-direction and the distance of Y-direction between note 12, to detect the alignment for the pattern for being formed at Semiconductor substrate predetermined portions
Error.In this application, X-direction refers both to the horizontal direction of paper；Y-direction refers both to the vertical direction of paper.
Fig. 3 shows bar in bar in the prior art（bar in bar）The structure chart of the overlapping alignment mark of form.Reference
Fig. 3, the overlapping alignment mark 20 of the middle strips of this include the first overlay mark 21 and the second overlay mark 22.First lamination mark
Note 21 is formed at the first wafer layer of Semiconductor substrate（Front layer）On.First lamination mark 21 have two X-directions strip structure and
The strip structure of two Y-directions, four strip structure arrangements are rectangular shape, but adjacent strip structure is not connected to each other.Second
Second wafer layer of the overlay mark 22 on the first wafer layer（Work as layer）Upper formation.Second overlay mark 22 also has two X sides
To strip structure and two Y-directions strip structure, four strip structures arrangement of the second overlay mark 22 is less than first
The rectangular shape of the rectangular dimension of overlay mark 21, the adjacent strip structure of the second overlay mark 22 are also not connected to each other.
Shown in Fig. 3 in the prior art, the center line and the second lamination of the list structure of two X-directions in the first overlay mark 21 of measurement are passed through
The list structure of two Y-directions in the distance of the center line of the list structure of 22 liang of X-directions of mark, and the first overlay mark 21 of measurement
Center line and second 22 liang of Y-directions of overlay mark list structure center line distance, to detect, to be formed at Semiconductor substrate pre-
Determine the alignment error of the pattern of part.
Fig. 4 shows the structure chart of the overlapping alignment mark of grizzly bar form in the prior art.As shown in figure 4, the grizzly bar shape
The overlapping alignment mark 30 of formula includes the first alignment mark 31 and the second alignment mark 32.Wherein, the first alignment mark 31 is formed
In the first wafer layer of Semiconductor substrate（Front layer）, including four group of first grizzly bar group, every group of first grizzly bar group is including a plurality of parallel
Spaced narrow grizzly bar, wherein, two group of first grizzly bar group extends in X direction, and another two group of first grizzly bar group extends along Y-direction,
The the first grizzly bar group extended in X direction is arranged alternately with the first grizzly bar group extended along Y-direction, and four group of first grizzly bar group is each other
Between there is a certain distance, so as to the first alignment mark 31 middle part formed a receiving portion.Second alignment mark 32 is formed
The second wafer layer on the first wafer layer（Work as layer）On, including four group of second grizzly bar group, every group of second grizzly bar group is including more
The wide grizzly bar for being wider than foregoing narrow grizzly bar that bar parallel interval is set.Wherein, two group of second grizzly bar group extends in X direction, another two groups
Second grizzly bar group extends along Y-direction, and the second grizzly bar group extended in X direction replaces with the second grizzly bar group extended along Y-direction to be set
Put, and between four group of second grizzly bar group apart from very little, so as to situation about being aligned in the first wafer layer with the second wafer layer
Under, the second alignment mark 32 is located in the receiving portion at the middle part of the first alignment mark 31.In the prior art, leading to shown in Fig. 4
Cross the first overlay mark 21 of measurement is formed at Semiconductor substrate predetermined portions with whether the second overlay mark 22 is aligned to detect
The alignment error of pattern.
During the application is realized, it is found by the applicant that problems with least be present in above prior art：
The overlapping alignment of strips or grizzly bar form marks in box-like formula, bar in the box of above prior art, and front layer provides
Outside box or bar or grizzly bar group, when layer makes inner side box or bar or grizzly bar group.Therefore, every layer must provide at two groups to fiducial mark
Note, one group of alignment mark be outside box or bar or grizzly bar group as the alignment mark with rear layer, another group of alignment mark is inner side
Box or bar or grizzly bar group are as the alignment mark with front layer.Some key stratums then need more outside boxes or bar or grizzly bar group,
With for other layers of offer alignment target.For example, under the arrangement of the alignment mark of above prior art, for important crystalline substance
For circle layer, one group of autoregistration mark, one group of polycrystalline silicon grid layer alignment mark, one group of lead aperture layer alignment mark are at least needed.
With the development of semiconductor fabrication, the characteristic size of semiconductor devices has been narrowed down to below 28nm technology nodes, dual exposure
Light and more rear ends（BEOL, back end of line）Process layer implants photoetching process.Therefore, in the mark zone of chip
Need to arrange increasing alignment mark in domain, in metal level（Metal layers）And via layer（Via layers）Between
Need to carry out more frequently to locating tab assembly.High-accuracy and high yield become the basic demand of patterned area measuring lamination.Separately
On the one hand, to meet the needs of technology controlling and process, it is also required to arrange more verification patterns in marking groove（test key）And prison
Mapping shape（monitor pattern）To meet the detection demands such as characteristic line breadth measurement and defects detection.But the sky of marking groove
Between be limited, the arrangement of the overlapping alignment of above prior art mark is difficult to the arrangement need for meeting increasing figure
Ask.
The content of the invention
The application purpose is to provide a kind of overlapping alignment mark and the substrate with overlapping alignment mark, it is intended to saves
The shared marked region of overlapping alignment mark.
This application provides a kind of overlapping alignment mark, overlapping alignment mark is arranged on substrate, and substrate includes basal layer
With the multiple lamellas being arranged on basal layer, overlapping alignment mark includes：Basal layer alignment mark, basal layer alignment mark are set
In on the marked region of basal layer；Lamella alignment mark, each lamella alignment mark are arranged on corresponding lamella, wherein, set
There are at least two lamellas in each lamella of lamella alignment mark to be aligned by corresponding lamella alignment mark and same basal layer
Position relationship between mark realizes the alignment with basal layer.
Further, each lamella alignment mark is arranged to：It is being provided with each lamella of lamella alignment mark and basal layer
Under the alignment of alignment, in the projection of the overlapping alignment mark in the plane parallel to substrate, at least two lamella
Each lamella alignment mark each other set without overlapping.
Further, each lamella alignment mark of at least two lamella is arranged to：In an aligned state, in projection
Each lamella alignment mark of at least two lamella is respectively positioned on the arrangement area limited by the same basal layer alignment mark
In domain.
Further, the structure of each lamella alignment mark of at least two lamella and/or size are identical.
Further, the structure of each lamella alignment mark of at least two lamella is identical with size, described same
One basal layer alignment mark includes at least one and the structure and size of each lamella alignment mark of at least two lamella
Identical son mark.
Further, the same basal layer alignment mark includes four first son marks, each first son mark difference
On four angles of rectangle frame, layout area is the region that rectangle frame surrounds.
Further, the first son mark includes cross shape marks, rectangular block formula mark, rectangle frame mark or grizzly bar group formula
Mark.
Further, the structure and/or size of each lamella alignment mark of at least two lamella and the first son mark
It is identical.
Further, the same basal layer alignment mark includes the second son mark, and the second son mark includes surrounding square
Mutually disjoint four rectangle marked bars of shape frame.
Further, rectangle marked bar is rectangular block formula slug, rectangle frame slug or grizzly bar group formula slug.
Further, in an aligned state, by a plurality of the first imaginary line extended in a first direction and a plurality of in projection
The intersection point that the second imaginary line extended along the second direction perpendicular to first direction intersects forms array, and each first imagination
Straight uniform is distributed and/or each second imaginary line is uniformly distributed, wherein each lamella alignment mark of at least two lamella
Arrange and be：The center of each lamella alignment mark overlaps with an intersection point in array.
Further, in an aligned state, a friendship in the center and array of the same basal layer alignment mark
Point overlaps.
Further, the same basal layer alignment mark includes at least one first son mark, in an aligned state,
An intersection point corresponding with array overlaps respectively at the center of each first son mark in projection.
Further, in an aligned state, each first son mark is located at each of at least two lamella respectively in projection
The outside in region shared by lamella alignment mark.
Further, the same basal layer alignment mark includes four first son marks, in an aligned state, projection
In with four first son mark center superposition four intersection points by two the first imaginary lines and two the second imaginary line shapes
Into each lamella alignment mark of at least two lamella is located at two the first imaginary lines and two the second imaginary lines surround
Rectangular area in.
Further, each intersection point in rectangular area arranges into M × N matrix form, wherein, M is more than or equal to 2
Natural number, N is the natural number more than or equal to 1, and M is more than or equal to N, and the quantity of lamella alignment mark is more than（M-1）×N
It is individual.
Further, the same basal layer includes multiple Dai Zhi areas, and the same basal layer alignment mark is located at
Between two adjacent Dai Zhi areas, basal layer alignment mark includes two self-alignment structures, and first in two self-alignment structures
The pattern in an individual Ge Daizhi areas with adjacent Dai Zhi areas is formed simultaneously, and second in two self-alignment structures is at first
Pattern after self-alignment structure formation with another Dai Zhi area in adjacent Dai Zhi areas is formed simultaneously, and Liang Gedaizhi areas pass through
The relative position of two self-alignment structures realizes alignment.
Further, two self-alignment structures are identical or different.
Further, two self-alignment structures form same described in the same basal layer alignment mark, described same
One basal layer alignment mark is relative to the orthogonal symmetrical axially symmetric structure of two axles.
Further, two self-alignment structures are identical, and two self-alignment structures surround rectangle frame, wherein, each autoregistration
Structure is located on two frames of rectangle frame and/or each self-alignment structure is located on two angles of rectangle frame.
Further, two self-alignment structure differences, two self-alignment structures surround rectangle frame, wherein, an autoregistration
Structure is located on four angles of rectangle frame, and another self-alignment structure is located on the four edges frame of rectangle frame.
The second aspect of the application provides a kind of substrate, and substrate includes basal layer and multiple be arranged on basal layer
Layer, wherein, substrate also includes overlapping alignment mark any one of according to a first aspect of the present invention.
The substrate for being marked according to the overlapping alignment of the application and being marked with the overlapping alignment, each routine monitoring figure are complete
Disk considers that multiple lamella alignment marks can be measured equipment simultaneously relative to same basal layer alignment mark and detect, therefore,
Alignment error that can be with same each layer of basal layer alignment mark detection relative to basal layer, so as to only be needed in each measuring point
Arrange the overlapping alignment mark of a application, you can lamination alignment and measuring lamination are realized, therefore, in the overlapping of the application
Under alignment mark arrangement, the region of more marked regions such as marking groove is released, and has saved overlapping alignment mark
The marked region of occupancy.Further, when above overlapping alignment mark is arranged on the chip of production semiconductor, it is saved
Marked region can be used for setting other necessary verification patterns, so as to the control and development beneficial to small line width technique.
Brief description of the drawings
The accompanying drawing for forming the part of the application is used for providing further understanding of the present application, the schematic reality of the application
Apply example and its illustrate to be used to explain the application, do not form the improper restriction to the application.In the accompanying drawings：
Fig. 1 is the layout drawing of overlapping alignment mark in the prior art；
Fig. 2 is the structure chart of the overlapping alignment mark of box-like formula in box in the prior art；
Fig. 3 is the structure chart of the overlapping alignment mark of strips in bar in the prior art；
Fig. 4 is the structure chart of the overlapping alignment mark of grizzly bar form in the prior art；
Fig. 5 is the overlooking the structure diagram of the overlapping alignment mark of the application first embodiment；
Fig. 6 is the overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of the application first embodiment；
Fig. 7 is the vertical view of the first son mark of basal layer alignment mark during the overlapping alignment of the application first embodiment marks
Structural representation；
Fig. 8 is that the autoregistration mark in each Dai Zhi areas of active region layer in the application first embodiment overlooks the vertical view of arrangement
Structural representation；
Fig. 9 is the plan structure of the autoregistration label placement in multiple Dai Zhi areas of active region layer in the application first embodiment
Schematic diagram；
Figure 10 is the overlooking the structure diagram of the overlapping alignment mark of the application second embodiment；
Figure 11 is the overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of the application second embodiment；
Figure 12 is the vertical view knot of the autoregistration label placement in each Dai Zhi areas of active region layer in the application second embodiment
Structure schematic diagram；
Figure 13 is the vertical view knot of the autoregistration label placement in multiple Dai Zhi areas of active region layer in the application second embodiment
Structure schematic diagram；
Figure 14 is the overlooking the structure diagram of the overlapping alignment mark of the application 3rd embodiment；
Figure 15 is the overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of the application 3rd embodiment.
Embodiment
Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.It should be noted that in the feelings not conflicted
Under condition, the feature in embodiment and embodiment in the application can be mutually combined.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
For the ease of description, space relative terms can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be appreciated that space relative terms are intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.For example, if the device in accompanying drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also the positioning of other different modes（It is rotated by 90 ° or in other orientation）, and
And respective explanations are made to the relative description in space used herein above.
In addition, in this application, technical term " multiple " refers to " two or more ".
As background technology is introduced, the arrangement that prior art has overlapping alignment mark is difficult to meet increasingly
The technical problem of the arrangement demand of more figures.To solve the technical problem, the overlapping alignment mark of the application is set on substrate
Note.Wherein substrate includes basal layer and the multiple lamellas being arranged on basal layer.Overlapping alignment mark includes basal layer to fiducial mark
Note and lamella alignment mark.Basal layer alignment mark is arranged on the marked region of basal layer.Each lamella alignment mark is arranged at
On corresponding lamella, wherein, it is provided with least two lamellas in each lamella of lamella alignment mark and is aligned by corresponding lamella
Position relationship between mark and same basal layer alignment mark realizes the alignment with basal layer.
Under the overlapping alignment label placement mode of the application, the region of more marked regions such as marking groove is released
Come, saved the marked region that overlapping alignment mark takes.Further, above overlapping alignment mark is arranged at production and partly led
When on the chip of body, the marked region being saved can be used for setting other necessary verification patterns, so as to be beneficial to small line width work
The control and development of skill.
Below with reference to first shown in Fig. 5 to Figure 15 to 3rd embodiment, processed with chip in production process of semiconductor
Exemplified by further illustrate the application overlapping alignment mark.First into 3rd embodiment, chip is corresponding with substrate, active
Region layer is corresponding with basal layer, and each wafer layer such as polycrystalline gate layer, lead aperture layer, metal level and via layer is corresponding with lamella.
Fig. 5 is the overlooking the structure diagram of the overlapping alignment mark of the application first embodiment；Fig. 6 is that the application first is real
Apply the overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of example；Fig. 7 is the weight of the application first embodiment
The overlooking the structure diagram of first son mark of basal layer alignment mark in folded alignment mark；Fig. 8 is the application first embodiment
The autoregistration mark in each Dai Zhi areas of middle active region layer overlooks the overlooking the structure diagram of arrangement；Fig. 9 is that the application first is real
Apply the overlooking the structure diagram of the autoregistration label placement in multiple Dai Zhi areas of active region layer in example.
In this application, " overlooking the structure diagram " refers to resulting knot from being carried out perpendicular to the direction of chip
Structure schematic diagram.In other words, " overlooking the structure diagram " refers in projection of the corresponding construction in the plane parallel to substrate
Structural representation.
As shown in figure 5, the overlapping alignment mark 100 of first embodiment includes basal layer alignment mark 110 and multiple lamellas
Alignment mark.
Basal layer alignment mark 110 is arranged on the marked region of the active region layer of chip.The marked region can be crystalline substance
The fringe region or marking groove of piece.Basal layer alignment mark 110 is used to realize the polycrystalline gate layer being located on active region layer, lead
Each wafer layer such as aperture layer, metal level and via layer relative to active region layer alignment.
Each lamella alignment mark is arranged in a corresponding wafer layer in each lamella alignment mark.Wherein, each lamella
Alignment mark is arranged to：Under the alignment that each wafer layer is aligned with active region layer, in the plane parallel to chip
In the projection of basal layer alignment mark and each lamella alignment mark, each lamella alignment mark is set without overlapping each other
Put.Referring to Fig. 5, each lamella alignment mark is respectively positioned on a layout area limited by basal layer alignment mark in the projection
It is interior.
As shown in figure 5, basal layer alignment mark 110 is rectangular frame structure on the whole.Basal layer alignment mark 110 includes four
Individual first sub- mark 111 and a second sub- mark 112.Wherein, each first sub- mark 111 is decussate texture.Second son
Mark 112 includes four rectangle marked bars for surrounding rectangle frame, and four rectangle marked bars mutually disjoint.Wherein four first sons
Mark 111 is respectively on four angles of rectangle frame.
In the first embodiment, each lamella alignment mark is focused on the inside of the rectangle frame, interior so as to, the rectangle frame
Portion region becomes the layout area of each lamella alignment mark.
In the first embodiment, overlapping alignment mark includes nine lamella alignment marks.Exemplarily indicate in Figure 5
The lamella of the lamella alignment mark 131 of lead aperture layer, the lamella alignment mark 132 of polycrystalline gate layer and the first metal layer is to fiducial mark
Note 133.Remaining lamella alignment mark is lamella alignment mark in remaining wafer layer, such as the lamella alignment of via layer
The lamella alignment mark etc. of mark, second metal layer.
In an aligned state, a lamella alignment mark in aforementioned projection in each lamella alignment mark is aligned with basal layer
The center of mark can overlap.As shown in figure 5, in nine lamella alignment marks in a middle lamella alignment mark
The heart is the center superposition with basal layer alignment mark 110.Certainly, in other unshowned embodiments, in an aligned state,
Can also it be arranged at intervals between the center of each lamella alignment mark and the center of basal layer alignment mark in aforementioned projection, example
Such as, in a variant embodiment of first embodiment, if only needing eight lamella alignment marks, foregoing is located at centre
A lamella alignment mark may not necessarily set.
The structure and size of each lamella alignment mark are preferably identical.Basal layer alignment mark can also be included at least
One and structure and size the identical mark of lamella alignment mark.In the first embodiment, the structure of each lamella alignment mark
It is identical with the structure and size of the first sub- mark 111 of basal layer alignment mark 110 with size.This, which is provided with, is beneficial to be surveyed
Amount and alignment.
Preferably, in an aligned state, by a plurality of the first imaginary line extended in a first direction and more in aforementioned projection
The intersection point that the second imaginary line that bar extends along the second direction perpendicular to first direction intersects forms array, and each first imagination is straight
Line is uniformly distributed and/or each second imaginary line is uniformly distributed.In the center of wherein each lamella alignment mark and the array
One intersection point overlaps.Direction of each lamella alignment mark on aforementioned projection is consistent, each lamella alignment mark and each first son
The direction of mark is consistent.Under the alignment, a friendship in overlapping alignment marks in aforementioned projection center and array
Point overlaps.In an aligned state, in aforementioned projection each first son mark also respectively one corresponding with the array, center
Intersection point overlaps.As shown in figure 5, each lamella alignment mark is arranged by the rule in first embodiment.Be arranged such be advantageous into
Row measurement and alignment.
In an aligned state, each first sub- mark 111 is located at region shared by each lamella alignment mark respectively in aforementioned projection
Outside.As shown in figure 5, in first embodiment, the center weight with four the first sub- marks 111 of basal layer alignment mark 110
The intersection point of conjunction forms rectangular area by two the first imaginary lines and two the second imaginary lines, and each lamella alignment mark is respectively positioned on
Inside the rectangular area that this two first imaginary lines and two the second imaginary lines surround.
As shown in figure 5, each intersection point in above rectangular area is into M × N matrix form arrangement, wherein, M be more than or equal to
2 natural number, N is the natural number more than or equal to 1, and M is more than or equal to N, and the quantity of lamella alignment mark is more than（M-1）
× N number of.It is such to be arranged so as to set required lamella alignment mark in region as small as possible, be advantageous to reduce overlapping
Region shared by alignment mark 100.Each intersection point in first embodiment in rectangular area arranges into 3 × 3 matrix forms, each
Point of intersection arranges a lamella alignment mark.
As shown in fig. 6, the first sub- mark 111 is decussate texture on the whole.Further combined with Fig. 7, the first sub- mark 111
Including the rectangular block 111A positioned at decussate texture center and the four edges from rectangular block 111A be up and down, left and right four direction
Each extend over and four rectangular strips 111B spaced with rectangular block 111A.The size of the first sub- mark 111 can be made
Make corresponding to the size of semiconductor devices to be made.Such as in the first embodiment, rectangular block 111A size is 0.2 micron
× 0.2 micron, rectangular strips 111B size is 0.2 micron × 1.0 microns, rectangular block 111A rectangular strips 111B intervals chi
Very little is 0.2 micron.
In the first embodiment, formed the second sub- mark 112 each rectangle marked bar be sized to 8.2 microns ×
2.6 micron.So, the Region control shared by the overlapping alignment mark 100 of first embodiment is micro- 14.2 microns × 14.2
Rice, so as to save the shared marked region of the overlapping alignment of each measuring point on chip mark.
In semiconductor fabrication processes, multiple Dai Zhi areas are often divided on a chip, using the side of multiple exposure
Formula forms the pattern in each Dai Zhi areas, is also required to be aligned between previous exposure and the pattern of rear exposure.First embodiment it is overlapping
Alignment mark can also realize autoregistration in active region layer.
Referring to Fig. 8 and Fig. 9, active region layer includes multiple Dai Zhi areas 200, basal layer alignment mark 110 in first embodiment
Between the Dai Zhi areas 200 adjacent positioned at two, basal layer alignment mark 110 includes two self-alignment structures --- self-alignment structure
110A and self-alignment structure 110B.First in two self-alignment structures with the Ge Daizhi areas in adjacent Dai Zhi areas 200
200 pattern is formed simultaneously, second in two self-alignment structures after first self-alignment structure is formed with it is adjacent
The pattern in another Dai Zhi area 200 in Dai Zhi areas 200 is formed simultaneously, and Liang Gedaizhi areas 200 pass through two self-alignment structures
Relative position realizes alignment.
Two self-alignment structures can divide it is identical can also be different.As shown in Figure 8 and Figure 9, in the first embodiment,
Two self-alignment structures are identical, and simply arranged direction is different.Wherein, each self-alignment structure includes two first son marks
111 and the second two rectangle marked bar adjacent in sub- mark 112, one of rectangle marked bar marked positioned at two first sons
Between 111.Two self-alignment structure composition basal layer alignment marks 110, basal layer alignment mark 110 is formed as relative to mutual
The vertical symmetrical axially symmetric structure of two axles.In the first embodiment, two self-alignment structures surround rectangle frame, wherein,
Two rectangle marked bars in each self-alignment structure in the second sub- mark 112 are located on two frames of rectangle frame, and two
First sub- mark 111 is located on two angles of rectangle frame.
But the dividing mode of above self-alignment structure can change, if can realize two adjacent Dai Zhi areas from right
Accurate dividing mode.For example, the basal layer alignment mark of first embodiment above can also be divided into two it is different from
Align structures.For example, first self-alignment structure is four the first sub- marks 111, second self-alignment structure is that the second son is marked
Note 112, after double exposure, two self-alignment structures can equally form the basal layer alignment mark 110 shown in Fig. 8.
Basal layer alignment mark and lamella alignment mark can have various change in first embodiment above, for example, base
Plinth layer alignment mark can only include four first sons and mark, and without being marked including the second son, or basal layer alignment mark can
Only to include the second son mark without the first son can be included simultaneously including four first son marks, or basal layer alignment mark
Mark and the second son mark, but the quantity of the first son mark can not be four, such as can be one, two.In addition, first
Son mark and lamella alignment mark can not be decussate texture, can also be rectangular block formula mark, rectangle frame mark or
Grizzly bar group formula marks.Even if being cross, the decussate texture shown in Fig. 7 is may not be, but cross hair shape, centre are without rectangle
Cross of block etc..And the second son mark can also change, such as in the first embodiment, each slug of the son mark of composition second
For rectangular block formula slug, still, each slug can also be the form such as rectangle frame slug or grizzly bar group formula slug
Slug.In addition, each lamella alignment mark each other and each lamella alignment mark and first son mark between structure and
Size can also be different.
Second embodiment following below and 3rd embodiment only illustrate these changes by way of example.
Figure 10 is the overlooking the structure diagram of the overlapping alignment mark of the application second embodiment；Figure 11 is the application second
The overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of embodiment；Figure 12 is in the application second embodiment
The overlooking the structure diagram of the autoregistration label placement in each Dai Zhi areas of active region layer；Figure 13 is in the application second embodiment
The overlooking the structure diagram of the autoregistration label placement in multiple Dai Zhi areas of active region layer.
As shown in Figure 10 to 13, the overlapping alignment mark 300 in second embodiment and the overlapping alignment in first embodiment
Mark 100 is compared, and the cross shape marks 311 only included on four angles of be centrally located at a rectangle four mark as son, and
Do not include other sub- marks.In this second embodiment, each cross shape marks 311 are centrally located at four of a rectangle 320
On angle, the layout area of each lamella alignment mark is located in the region that rectangle 320 surrounds.Each cross shape marks 311 towards phase
Together.Lamella alignment mark 331, the lamella alignment mark 332 and first of polycrystalline gate layer of lead aperture layer are only identified in Figure 10
The lamella alignment mark 333 of metal level, remaining lamella alignment mark are the lamella alignment mark on remaining lamella.
As shown in Figure 12 and Figure 13, the overlapping alignment mark of second embodiment can also be divided into two self-alignment structures
310A and 310B, adjacent Liang Gedaizhi areas 200 realize autoregistration by two self-alignment structures 310A and 310B.It is real second
Apply in example, formed by the use of two adjacent decussate textures as a self-alignment structure, two self-alignment structures shown in Figure 11
Basal layer alignment mark 310.Certainly, the dividing mode of above self-alignment structure is nor unique.For example, in second embodiment
A variant embodiment in, a self-alignment structure can also be used as using two decussate textures 311 on diagonal.
Other unaccounted contents refer to the related content of first embodiment in second embodiment.
Figure 14 is the overlooking the structure diagram of the overlapping alignment mark of the application 3rd embodiment；Figure 15 is the application the 3rd
The overlooking the structure diagram of the basal layer alignment mark of the overlapping alignment mark of embodiment.
As shown in Figure 14 and Figure 15, the difference of 3rd embodiment and first embodiment is, disjunct with each frame
The son mark of the form of square frame-shaped mark 511 instead of the first sub- mark 111 of first embodiment.It is overlapping referring to Figure 14 and Figure 15
Alignment mark 500 includes basal layer alignment mark 510 and multiple lamella alignment marks 531,532,533 etc..Basal layer is to fiducial mark
Note 510 includes four square frame-shaped marks 511 and a rectangle frame mark 512, each square frame-shaped mark 511 and rectangle frame mark 512
Surround a rectangle frame.Each lamella alignment mark is identical with the structure and size of square frame-shaped mark 511.Also, each lamella alignment
Mark structure is in the form of an array inside the rectangle frame where basal layer alignment mark 510.
Other unaccounted parts may be referred to the related content of first embodiment in 3rd embodiment, no longer superfluous herein
State.For example, 3rd embodiment can also realize the autoregistration in the adjacent Dai Zhi areas of active region layer.
The set-up mode of the overlapping alignment mark of various embodiments above has the alignment mark size determined to all lamellas
And design rule, when the position of layer alignment mark and front layer alignment mark is differentially set by design rule in technical process
Meter, so as to which all layers of alignment mark of substrate is concentrated in a less region, it is released more marked regions
Out.In principle, the region that the overlapping alignment mark of each measuring point takes can be controlled in the region of 10 to 50 microns of length and width
In the range of.So as to which the application can provide a kind of mark zone saved each measuring point and taken with simple technique and relatively low input
The overlapping alignment mark in domain.
Moreover, in semiconductor fabrication processes, the overlapping alignment mark of various embodiments above is aligned in photoetching process to be detected
When, each Dai Zhi areas on active region layer can realize autoregistration by basal layer alignment mark.Hence for each measuring point
For, for all wafers layer including active region layer, it is only necessary to arrange that one group of alignment mark can be achieved from right
Accurate, multilayer alignment and measuring lamination.
In addition, the set-up mode of the overlapping alignment mark of above example can be detected simultaneously by the position mark of each lamella
Note, it is possible to achieve between all layers to locating tab assembly, so as to shorten time of measuring, improve measurement efficiency, improve product
Yield.
The preferred embodiment of the application is the foregoing is only, is not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (20)
1. a kind of overlapping alignment mark, the overlapping alignment mark is arranged on substrate, and the substrate includes basal layer and setting
In multiple lamellas on the basal layer, it is characterised in that the overlapping alignment mark includes：
Basal layer alignment mark, the basal layer alignment mark are arranged on the marked region of the basal layer；
Lamella alignment mark, each lamella alignment mark are arranged on the corresponding lamella, wherein, it is provided with the lamella
At least two lamellas pass through the corresponding lamella alignment mark and same basal layer pair in each lamella of alignment mark
Position relationship between fiducial mark note realizes the alignment with the basal layer；
The structure and/or size of each lamella alignment mark of at least two lamella are identical；
The structure of each lamella alignment mark of at least two lamella is identical with size, the same basal layer alignment
Mark includes at least one and structure of each lamella alignment mark of at least two lamella and size identical is marked
Note.
2. overlapping alignment mark according to claim 1, it is characterised in that each lamella alignment mark is arranged to：
It is provided with the alignment that each lamella of the lamella alignment mark is aligned with the basal layer, parallel to described
In the projection of overlapping alignment mark in the plane of substrate, each lamella alignment mark of at least two lamella that
Set without overlapping between this.
3. overlapping alignment mark according to claim 2, it is characterised in that each lamella of at least two lamella
Alignment mark is arranged to：Under the alignment, each lamella alignment of at least two lamellas described in the projection
Mark is respectively positioned in the layout area limited by the same basal layer alignment mark.
4. overlapping alignment mark according to claim 3, it is characterised in that the same basal layer alignment mark includes
Four first son marks, for each first son mark respectively on four angles of rectangle frame, the layout area is the square
The region that shape frame surrounds.
5. overlapping alignment mark according to claim 4, it is characterised in that the first son mark includes cross mark
Note, rectangular block formula mark, rectangle frame mark or grizzly bar group formula mark.
6. overlapping alignment mark according to claim 4, it is characterised in that each lamella of at least two lamella
Alignment mark is identical with the structure and/or size of the described first son mark.
7. overlapping alignment mark according to claim 4, it is characterised in that the same basal layer alignment mark includes
Second son mark, the second son mark include mutually disjoint four rectangle marked bars for surrounding the rectangle frame.
8. overlapping alignment mark according to claim 7, it is characterised in that the rectangle marked bar marks for rectangular block formula
Bar, rectangle frame slug or grizzly bar group formula slug.
9. overlapping alignment mark according to claim 2, it is characterised in that under the alignment, in the projection
Extended by a plurality of the first imaginary line extended in a first direction and a plurality of edge perpendicular to the second direction of the first direction
The intersecting intersection point of second imaginary line forms array, and each first imaginary line is uniformly distributed and/or each described second
Imaginary line is uniformly distributed, wherein each lamella alignment mark arrangement of at least two lamella is：Each lamella
The center of alignment mark overlaps with an intersection point in the array.
10. overlapping alignment mark according to claim 9, it is characterised in that described same under the alignment
The center of basal layer alignment mark overlaps with an intersection point in the array.
11. overlapping alignment mark according to claim 9, it is characterised in that the same basal layer alignment mark bag
Include it is at least one first son mark, under the alignment, in the projection it is each it is described first son mark center respectively with
A corresponding intersection point overlaps in the array.
12. overlapping alignment mark according to claim 11, it is characterised in that under the alignment, the projection
In it is each it is described first son mark respectively positioned at least two lamella each lamella alignment mark shared by region outside.
13. overlapping alignment mark according to claim 12, it is characterised in that the same basal layer alignment mark bag
Four the first son marks are included, it is heavy with the center of four the first son marks in the projection under the alignment
Four intersection points closed are formed by two first imaginary lines and two second imaginary lines, and described at least two
Each lamella alignment mark of lamella is located at two first imaginary lines and two second imaginary lines surround
In rectangular area.
14. overlapping alignment mark according to claim 13, it is characterised in that each friendship in the rectangular area
Point arranges into M × N matrix form, wherein, M is the natural number more than or equal to 2, and N is the natural number more than or equal to 1, and M is big
In or equal to N, the quantity of the lamella alignment mark is more than (M-1) × N number of.
15. the overlapping alignment mark according to any one of claim 1 to 14, it is characterised in that the basal layer includes
Multiple Dai Zhi areas, the same basal layer alignment mark is between two adjacent Dai Zhi areas, the same base
Plinth layer alignment mark includes two self-alignment structures, first in two self-alignment structures and the adjacent Dai Zhi areas
In the pattern in a Ge Daizhi areas formed simultaneously, second in two self-alignment structures is in first autoregistration knot
With the pattern in another Dai Zhi area in the adjacent Dai Zhi areas while being formed after being configured to, described two Dai Zhi areas pass through
The relative position of described two self-alignment structures realizes alignment.
16. overlapping alignment according to claim 15 mark, it is characterised in that described two self-alignment structures are identical or not
Together.
17. overlapping alignment mark according to claim 16, it is characterised in that described in described two self-alignment structure compositions
Same basal layer alignment mark, the same basal layer alignment mark are symmetrical relative to orthogonal two axles
Axially symmetric structure.
18. overlapping alignment mark according to claim 17, it is characterised in that described two self-alignment structures are identical, institute
State two self-alignment structures and surround rectangle frame, wherein, each self-alignment structure is located on two frames of the rectangle frame
And/or each self-alignment structure is located on two angles of the rectangle frame.
19. overlapping alignment mark according to claim 17, it is characterised in that described two self-alignment structures are different, institute
State two self-alignment structures and surround rectangle frame, wherein, a self-alignment structure is located on four angles of the rectangle frame, separately
One self-alignment structure is located on the four edges frame of the rectangle frame.
20. a kind of substrate, the substrate includes basal layer and the multiple lamellas being arranged on the basal layer, it is characterised in that
The substrate also includes the overlapping alignment mark according to any one of claim 1 to 19.
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| CN201410100759.7A CN104934413B (en) | 2014-03-18 | 2014-03-18 | Overlapping alignment marks and the substrate with overlapping alignment mark |
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| CN201410100759.7A CN104934413B (en) | 2014-03-18 | 2014-03-18 | Overlapping alignment marks and the substrate with overlapping alignment mark |
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| CN104934413B true CN104934413B (en) | 2018-03-23 |
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| CN108089770B (en) * | 2018-02-09 | 2021-02-23 | 合肥鑫晟光电科技有限公司 | Touch screen mother board and manufacturing method thereof, touch screen and display touch device |
| CN111524836B (en) | 2019-02-13 | 2021-08-27 | 长江存储科技有限责任公司 | Marking for locating patterns in semiconductor manufacturing |
| CN111933618B (en) * | 2020-08-13 | 2022-01-28 | 武汉新芯集成电路制造有限公司 | Wafer assembly with alignment mark, forming method thereof and wafer alignment method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733690A (en) * | 1995-10-05 | 1998-03-31 | Samsung Electronics Co., Ltd. | Reticle for fabricating semiconductor device |
| TW200729451A (en) * | 2006-01-26 | 2007-08-01 | Nanya Technology Corp | An alignment structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110097692A1 (en) * | 2009-04-17 | 2011-04-28 | Homan Joseph B | Business Risk Training Game |
| CN201897692U (en) * | 2010-10-16 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Masking plate with alignment marks |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733690A (en) * | 1995-10-05 | 1998-03-31 | Samsung Electronics Co., Ltd. | Reticle for fabricating semiconductor device |
| TW200729451A (en) * | 2006-01-26 | 2007-08-01 | Nanya Technology Corp | An alignment structure |
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