CN104849970B - Alignment mark and its alignment methods for back side photoetching process - Google Patents
Alignment mark and its alignment methods for back side photoetching process Download PDFInfo
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- CN104849970B CN104849970B CN201410051869.9A CN201410051869A CN104849970B CN 104849970 B CN104849970 B CN 104849970B CN 201410051869 A CN201410051869 A CN 201410051869A CN 104849970 B CN104849970 B CN 104849970B
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Abstract
This application discloses a kind of alignment mark and its alignment methods for back side photoetching process.This special alignment mark includes：Part I structure, it forms the first square configuration by four alignment grizzly bar groups；And around the Part II structure of Part I structure, it forms the second square configuration by four independent alignment grizzly bars as four edges, and the second square configuration constitutes three-back-shaped and two square configurations corresponding edge with the first square configuration and is parallel to each other.Alignment methods using the special alignment mark include：Increase exposes and forms two or more above-mentioned special alignment marks on front wafer surface；The special alignment mark is recognized according to the position coordinates of special alignment mark；And the alignment mark corresponding with mask of the alignment mark on front wafer surface is aligned for back side photoetching, the wherein alignment mark corresponding on mask of the alignment mark on front wafer surface is specular.
Description
Technical field
This invention relates generally to the alignment mark used in semiconductor device processing technology, more particularly to photoetching process and
Its alignment methods.
Background technology
Photoetching technique is the basis of large scale integrated circuit manufacturing technology, and it largely determines integrated circuit
Integrated level.So-called photoetching is that the pattern on mask plate is transferred on the chip for scribbling photoresist by exposing, mask after development
The pattern of plate will appear on chip.
Step very crucial is by mask plate and wafer aligned in photoetching process.In the manufacturing process of integrated circuit,
It is generally necessary to expose several layers of or even tens layers mask patterns on chip to form complete circuit structure.In multiple photoetching
In, in addition to first time photoetching, remaining photoetching is required for the mask plate and chip for this photoetching before exposure
The first layer pattern or preceding layer or several layers of patterns exposed is accurately aligned.The alignment precision control of photoetching determines integrated
The complexity and functional density of circuit.
For BSI/3D（Back lighting/three-dimensional）IC（Integrated circuit）Technological design in chip back surface, it is necessary to carry out some
Photoetching process, as shown in Figure 1.Specifically, Fig. 1 shows carrier wafer 101 and the device wafer on carrier wafer 101
102, wherein carrying out some back process 103 on the back side of device wafer 102.These techniques need high accuracy, for example, require
Layer to layer alignment precision is less than 0.1 μm（Micron）.
However, the conventional alignment mark used during positive technique is useless for back process.Change
Yan Zhi, the alignment mark that positive technique is used is not used to back side photoetching process.Therefore, currently without useful alignment mark
Back side lithography alignment is carried out for lithography tool.
Further, since the limitation of lithography tool, has certain moving range to Barebone.As shown in Fig. 2 it illustrates
Moving range 201.The mark being only located in moving range can be just detected.Moreover, for given mark coordinate, it is searched
Rope region is specific, and different types of mark has different regions of search.The region of search of alignment mark must be in alignment system
In the moving range of system.The scope of region of search generally can be from 40 microns to 200 microns.Usually, region of search is depended on
Alignment precision and mark are designed.Alignment precision is smaller, and region of search is also smaller.
In view of many restrictions of positive technique mark used and lithography tool, chip carries out the back side usually using marking groove
Lithography alignment.As shown in figure 3, it illustrates an example wafer marking groove 301.Using wafer scribe groove alignment methods, it can make
Layer to layer alignment precision is less than 60 microns.By using alignment compensation method, alignment precision can be made to be less than 1 micron.
But, the precision still can not meet requirement.For example, as shown in figure 4, during using wafer scribe groove alignment methods, hence it is evident that exist
The phenomenon of alignment misalignment.In addition, in the case where being aligned using marking groove, chip needs to do over again many times to remove light
Photoresist.
Accordingly, it would be desirable to which a kind of can improve the innovation alignment methods of back side photoetching process alignment precision.
The content of the invention
In view of this, the invention provides a kind of alignment mark and its alignment methods for back side photoetching process, it is used for
Improve the alignment precision of back side photoetching process.
There is provided a kind of alignment mark for back side photoetching process according to an aspect of the present invention.The alignment mark bag
Include：Part I structure, it forms the first square configuration by four alignment grizzly bar groups；And around the second of Part I structure
Part-structure, it forms the second square configuration, the second square configuration and first by four independent alignment grizzly bars as four edges
Square configuration constitutes three-back-shaped and two square configurations corresponding edge and is parallel to each other.
Preferably, in Part I structure, two set in the first direction first alignment grizzly bar group and two edges with
Second alignment grizzly bar group interlaced arrangement squarely in the form of four-quadrant that the vertical second direction of first direction is set, its
Middle first direction and second direction are parallel with two groups of opposite side difference of the second square configuration.
Preferably, two first alignment grizzly bar groups are located at second and fourth quadrant of Part I structure, and two respectively
Second alignment grizzly bar group is located at first and third quadrant of Part I structure respectively.
Preferably, the first alignment grizzly bar group includes multiple first alignment grizzly bars of setting mutually parallel along the first direction, and
Second alignment grizzly bar group includes multiple second alignment grizzly bars arranged in parallel in a second direction.
Preferably, multiple first alignment grizzly bars in the first alignment grizzly bar group are evenly spaced apart, and the second alignment grid
Multiple second alignment grizzly bars in bar group are evenly spaced apart.
Preferably, it is all right in two alignment grizzly bar groups of first and fourth quadrant of Part I structure respectively
The width of quasi- grizzly bar is that the spacing distances between W1 and all parallel adjacent two alignments grizzly bars are D1, respectively positioned at the
Second and third quadrant of a part of structure it is other two alignment grizzly bar groups in all alignment grizzly bars width be W2 and
Spacing distance between all parallel two adjacent alignment grizzly bars is D2, and wherein W1 is not equal to W2 and D1 is not equal to D2.
Preferably, the size of this special alignment mark is 550 μm * 550 μm.
Preferably, the material of this special alignment mark be selected from any one of metal, oxide, SiN and Si or
It is a variety of.
There is provided a kind of alignment methods for back side photoetching process according to another aspect of the present invention.This method is at least
Comprise the following steps：Increase exposes and forms two or more foregoing special alignment marks on front wafer surface；Root
This special alignment mark is identified according to the position coordinates of special alignment mark；And will be special to fiducial mark on front wafer surface
Note alignment mark corresponding with mask is aligned for back side photoetching, alignment mark and mask wherein on front wafer surface
On corresponding alignment mark be specular.
Preferably, formed on front wafer surface before above-mentioned special alignment mark, it is first determined to form this special
The accurate coordinates of the position of alignment mark.
In addition, the position of this special alignment mark can be randomly provided on front wafer surface.
There is provided a kind of mask plate according to a further aspect of the invention.The mask plate include two or more with such as before
The alignment mark of described special alignment mark specular.
There is provided a kind of semiconductor wafer according to a further aspect of the invention.The semiconductor wafer includes two or more
Individual foregoing special alignment mark.
This special alignment mark provided by the present invention has big region of search.Using this special to fiducial mark
Note, can make the region of search of back side photoetching process bring up to 200 microns * 200 microns from 40 microns * 40 microns, and make alignment essence
Degree is less than 0.1 micron, so as to considerably improve the alignment precision of back side photoetching process, improves device performance.
Brief description of the drawings
Exemplary implementation disclosed in this invention may be better understood by the way that the following detailed description is read in conjunction with the figure
Example, in the accompanying drawings：
Fig. 1 show back process during device architecture diagrammatic cross-section；
Fig. 2 shows the schematic diagram to the moving range of Barebone；
Fig. 3 shows the schematic diagram of the marking groove for being used to be aligned on chip；
The alignment misalignment phenomenon that Fig. 4 exists when showing and carrying out back side lithography alignment using wafer scribe groove；
Fig. 5 shows the alignment mark being located on chip according to an illustrative embodiment of the invention, wherein to fiducial mark
Note is arranged on the special area on chip；
Fig. 6 shows the enlarged diagram of alignment mark according to an illustrative embodiment of the invention；
Fig. 7 shows the enlarged diagram of the alignment mark according to another exemplary embodiment of the invention；
Fig. 8 shows the flow chart of alignment methods according to an illustrative embodiment of the invention；And
Fig. 9 shows that the alignment precision realized using alignment methods according to an illustrative embodiment of the invention is illustrated
Figure.
For interest of clarity, accompanying drawing shows general make, and description and the details of omission well-known characteristic and technology,
To avoid unnecessarily obscuring the discussion to embodiment of the present invention.In addition, each key element in accompanying drawing is painted not necessarily to scale
System.For example, the size of some key elements may be exaggerated to help improve to of the invention each relative to other key elements in accompanying drawing
The understanding of embodiment.Same reference numerals in different accompanying drawings represent identical element, and like reference numerals may but not necessarily
Represent similar key element.
Embodiment
The present invention is described in detail referring to the drawings.It should be appreciated that following detailed description is substantially only to show
Example property, and it is not intended to the purposes of limitation subject matter or the embodiment of application and these embodiments.As made herein
, wording " exemplary " expression " as example, example or explanation ".Should not being described herein as exemplary any realization
It is construed as certain preferred or is better than other realizations.Also, it is not intended to by aforementioned technical field, background technology, invention
Any expression or implicit theory showed in perhaps described further below is constrained.
Term " first " in the specification and in the claims, " second ", " the 3rd ", " the 4th " etc.（If any）
For being made a distinction between similar key element, and it is not necessarily to be used to describe certain order or time sequencing.It is appreciated that in appropriate feelings
These terms so used under condition are interchangeable, for example, enable invention as described herein embodiment with different from this paper institutes
State or shown other orders are operated.Similarly, it is presented herein if method described herein includes series of steps
The orders of these steps be not necessarily the unique order that can perform these steps, and some can be omitted the step of state
And/or some other steps not described here can be added to this method.In addition, term " comprising ", "comprising", " having " and
Its any deformation, which is intended to be applicable, not exclusively to be included so that process, method, product or device including a series of key elements are not necessarily
Be limited to those key elements, but may include not expressly listed or these processes, method, product or device intrinsic other key elements.
According to one exemplary embodiment of the present invention, there is provided a kind of alignment mark for back side photoetching process.This
Planting special alignment mark may include Part I structure and the Part II structure around Part I structure.Part I knot
Structure can form the first square configuration by four alignment grizzly bar groups, i.e., this four alignment grizzly bar groups are combined into one on the whole in pros
The shape of shape.And Part II structure as four edges can form the second square configuration by four independent alignment grizzly bars（Equally
For square）.On the whole, both the second square configuration and first square configuration constitute three-back-shaped, and the two are square
The corresponding edge of shape is parallel to each other.
In one example, in Part I structure, two set in the first direction first alignment grizzly bar group and two
What the individual edge second direction vertical with first direction was set second is directed at that grizzly bar group is interlaced in the form of four-quadrant to be arranged in
The shape being square on the whole, wherein the first and second directions are parallel with two groups of opposite side difference of the second square configuration.In other words,
Two first alignment grizzly bar groups can be set along a line of the second square configuration, and two second alignment grizzly bar groups can be along second party
Another adjacent edge of shape shape is set.
In further example, two first alignment grizzly bar groups are located at second and four-quadrant of Part I structure respectively
Limit, and two second alignment grizzly bar groups are located at first and third quadrant of Part I structure respectively.
In another further example, the first alignment grizzly bar group includes multiple the of setting mutually parallel along the first direction
One alignment grizzly bar, and the second alignment grizzly bar group includes multiple second alignment grizzly bars arranged in parallel in a second direction.Equally,
Multiple first alignment grizzly bars are actually also arranged in parallel along the above-mentioned a line of the second square configuration, and the second alignment grizzly bar
It is arranged in parallel along the above-mentioned another adjacent edge of the second square configuration.
In further example, multiple first alignment grizzly bars in the first alignment grizzly bar group can be evenly spaced apart, and
And second alignment grizzly bar group in it is multiple second alignment grizzly bars can also be evenly spaced apart.Or, the first alignment grizzly bar or second
The interval being aligned between grizzly bar also can be uneven.
Further, it is all in two alignment grizzly bar groups of first and fourth quadrant of Part I structure respectively
The width for being directed at grizzly bar is equal（For example, being W1）And in this two groups between all parallel adjacent two alignments grizzly bars between
Gauge is from equal（For example, being D1）, respectively positioned at Part I structure second and third quadrant it is other two alignment
The width of all alignment grizzly bars in grizzly bar group is equal（For example, being W2）And in this two groups all parallel adjacent two it is right
Spacing distance between quasi- grizzly bar is equal（For example, being D2）, wherein W1 is not equal to W2 and D1 is not equal to D2.As an example,
In the Part I structure of special alignment mark, left-half（The upper left corner and the lower left corner）Two alignment grizzly bar group size
（Grill width, adjacent grill spacing etc.）It is identical, and right half part（The upper right corner and the lower right corner）Two alignment grids
The size of bar group is identical, but left-half is different from the above-mentioned specific size of right half part.
Fig. 6 shows the enlarged diagram of alignment mark 600 according to an illustrative embodiment of the invention.As schemed
Show, alignment mark 600 is included by four alignment grizzly bar groups（602,604,602,604）The Part I structure of composition and surround
The Part II structure 601 of Part I structure, wherein Part II structure 601 by four it is independent, be not connected to each other
Alignment grizzly bar constitute, this four alignment grizzly bars sizes can be with identical.Part I structure and the Part II structure side of being
Shape shape and both generally constitute it is three-back-shaped.Moreover, the corresponding edge of the two square configurations is parallel to each other.Two in X direction
The the first alignment grizzly bar group 602 and two the second alignment grizzly bar groups 604 set along Y-direction set in the form of four-quadrant or
It is staggered squarely with matrix pattern, the alignment for realizing X-direction and Y-direction respectively, wherein X-direction and Y-direction are mutually hung down
Directly.First alignment grizzly bar group 602 includes multiple the first alignment grizzly bars and evenly spaced first being set parallel to each other in X direction
It is directed at the first alignment grizzly bar interval of grizzly bar.Similarly, the second alignment grizzly bar group 604 is set including multiple along Y-direction is parallel to each other
The the second alignment grizzly bar put and the second alignment grizzly bar interval of evenly spaced second alignment grizzly bar.
Note, two groups of opposite side of both of the aforesaid square configuration（For example, two groups of relative alignment grids of Part II structure
Bar）Equally it is be arranged in parallel in X direction with Y-direction respectively.In addition, two first alignment grizzly bar groups 602 are located at Part I respectively
Second and fourth quadrant of structure（That is the upper left corner and the lower right corner）, and two second alignment grizzly bar groups 604 are located at first respectively
First and third quadrant of separation structure（That is the upper right corner and the lower left corner）.It is located at first and fourth quadrant of Part I structure respectively
The second alignment grizzly bar group 604 in two alignments grizzly bar group, the i.e. upper right corner and the first alignment grizzly bar group 602 in the lower right corner in institutes
There is the width of alignment grizzly bar equal（For example, being W1）, and in this two groups between all parallel two adjacent alignment grizzly bars
Spacing distance it is equal（For example, being D1）.Similarly, respectively positioned at Part I structure second and third quadrant two
It is all right in the first alignment grizzly bar group 602 in individual alignment grizzly bar group, the i.e. upper left corner and the second alignment grizzly bar group 604 in the lower left corner
The width of quasi- grizzly bar is equal（For example, being W2）, and in this two groups between all parallel adjacent two alignments grizzly bars between
Gauge is from equal（For example, being D2）.Wherein, W1 is not equal to W2, and D1 is not equal to D2.
Fig. 7 shows the enlarged diagram of the alignment mark 700 according to another exemplary embodiment of the invention.To fiducial mark
Note 700 is similar to alignment mark 600, and it, which is distinguished, is that the position of both the first and second alignment grizzly bar groups is different.As schemed
Show, both alignment mark 600 and alignment mark 700 are speculars.
It can be formed according to this special alignment mark of the present invention by processing steps such as photoetching, etchings required for it
Figure.In one example, the technique for forming this special alignment mark can be independently of the independent of other technological processes
Flow.This independent flow can as old process additional flow, so as to not interfere with original operation of old process.
In one example, the size maximum of this special alignment mark is no more than 600 μm * 600 μm.For example, this special to fiducial mark
The big I of note is 550 μm * 550 μm.In actual process flow, those skilled in the art can select appropriate as needed
Alignment mark size.In one example, the material of this special alignment mark may be selected from metal, oxide, SiN, Si etc.
Any one or more of Deng.Equally, those skilled in the art can select appropriate material this to be formed as needed
Special alignment mark.
Fig. 8 shows the alignment methods 800 for back side photoetching process according to an illustrative embodiment of the invention
Flow chart.According to alignment methods 800, in step S801, increase exposes and forms two or more first on front wafer surface
Individual foregoing special alignment mark.In one example, can be by common process such as exposure, development, etching, fillings in crystalline substance
Piece forms this special alignment mark on front.In step S802, this is recognized according to the position coordinates of special alignment mark
Plant special alignment mark.In one example, for example, can be by devices such as step photo-etching machine or step-by-step scanning photo-etching devices according to this
Position coordinates identifies this special alignment mark on front wafer surface.Then, in step S803, by this on front wafer surface
Plant special alignment mark alignment mark corresponding with mask to be aligned, to carry out follow-up back side photoetching process.Wherein,
Special alignment mark alignment mark corresponding on mask on front wafer surface is specular, so as to chip back surface
It is aligned.Here, as an example, can be aligned using usual manner.
In addition, in one example, can be before above-mentioned special alignment mark be formed, first being determined on front wafer surface will
Form the accurate coordinates of the position of this special alignment mark.For example, special alignment mark can be defined to board in chip just
Accurate coordinates on face, so as to the technique such as be exposed on front wafer surface according to the coordinate to form special alignment mark.It is real
Test result to show, by using the accurate coordinates of alignment mark in subsequent technique, alignment precision can be significantly improved.In addition,
The position of this special alignment mark can be random on chip, you can it is this special to be randomly provided on front wafer surface
The position of alignment mark.
Although showing two special alignment marks on Fig. 5 chip and needed for two alignment marks have been sufficient for
Precision, although it will be understood by those skilled in the art that can also increase the quantity of this alignment mark further to improve alignment precision.
Note, although increase marker number will not increase process complexity, it is possible that sacrificing more effectively die areas.
Further, since the region of search of alignment mark must be in the moving range to Barebone, it is therefore desirable to which it is special to ensure
Alignment mark is located in the moving range of Barebone.Therefore, special alignment can be defined to board when carrying out photolithographic exposure
The accurate coordinates of mark.Increasing this special alignment mark of exposure on front wafer surface has larger search area.This
Kind special alignment mark is typically chosen in the shot of chip because than larger without that can be placed on Cutting Road（Photoetching figure
Shape unit）Upper carry out partial exposure.For example, in Figure 5, have selected two litho pattern units to carry out special exposure with spy
Determine region and form two special alignment marks.Specifically, two litho pattern lists are shown in the chip shown in Fig. 5 top half
Member, and the latter half then shows the amplification details of this litho pattern unit.Wherein, region 521 is special to fiducial mark to set
The special area of note, region 522 is the region using product graticule partial exposure.
By using the alignment methods of the present invention, the alignment precision of back side photoetching process can reach less than 0.1 micron, and
Photoetching can be greatly reduced to do over again number of times.
According to one exemplary embodiment of the present invention, a kind of mask plate is additionally provided.The mask plate is including two or more
Multiple alignment marks, these alignment marks are speculars with foregoing special alignment mark.
According to another exemplary embodiment of the present invention, a kind of semiconductor wafer is also provided.The semiconductor wafer includes
Two or more foregoing special alignment marks.In one example, this semiconductor wafer can be with corresponding mask
Plate cooperates to carry out back side photoetching process, wherein this mask plate may include two or more and the spy on the semiconductor wafer
The alignment mark of different alignment mark specular.
In addition, by using this special alignment mark, the region of search of back side photoetching process can be micro- from 40 micron * 40
Rice brings up to 200 microns * 200 microns, and alignment precision can reach less than 0.1 micron.
So far, the alignment mark and its alignment methods for back side photoetching process according to the present invention is described in detail
And semiconductor wafer and corresponding mask plate comprising this alignment mark.Based on technology disclosed in this invention, when entering
During the photoetching process of the row back side, alignment precision can be made to reach preferable target（As shown in Figure 9）, while unnecessary do over again can be avoided
Process.
Detailed description is given herein by reference to specific illustrative embodiment.It may be evident, however, that can be made respectively to these embodiments
Modifications and changes are planted, without departing from broader spirit and scope of the invention as described in the appended claims.Although having shown
Go out and describe the specific embodiment of the present invention, but those skilled in the art obviously can make and much change, change and modifications
Without departing from scope of the following claims.Therefore, specification and drawings are considered as illustrative and not restrictive meaning.And
And, above-mentioned use of embodiment and other examples language is not necessarily referring to same embodiment or same example, and may refer to
Be different and unique embodiments, it is also possible to be same embodiment.Appended claims will include in the range of it
All these changes in the true scope and spirit of the invention, change and modifications.
Claims (12)
1. a kind of alignment mark for back side photoetching process, including：
Part I structure, it forms the first square configuration by four alignment grizzly bar groups；And
Around the Part II structure of the Part I structure, it forms the by four independent alignment grizzly bars as four edges
Two square configurations, second square configuration constitutes three-back-shaped and two square configurations corresponding edge with first square configuration
It is parallel to each other；
Characterized in that, being located at the institute in two alignment grizzly bar groups of first and fourth quadrant of the Part I structure respectively
The width for having alignment grizzly bar is that the spacing distance between W1 and all parallel two adjacent alignment grizzly bars is D1, respectively position
The width of all alignment grizzly bars in other two alignments grizzly bar groups of second and third quadrant of the Part I structure
It is that spacing distances between W2 and all parallel adjacent two alignments grizzly bars are D2, wherein W1 is not equal to W2 and D1
In D2,
The corresponding alignment mark on mask used in wherein described alignment mark and the back side photoetching process is mirror image pair
Claim.
2. alignment mark as claimed in claim 1, it is characterised in that in the Part I structure, two along first party
Second set to the first alignment grizzly bar group of setting second direction vertical with the first direction with two edges is directed at grizzly bar
Group interlaced arrangement squarely in the form of four-quadrant, wherein the first direction and the second direction and the second party
Two groups of opposite side difference of shape shape is parallel.
3. alignment mark as claimed in claim 2, it is characterised in that two first alignment grizzly bar groups are located at described first respectively
Second and fourth quadrant of part-structure, and two second alignment grizzly bar groups are located at the first He of the Part I structure respectively
Third quadrant.
4. alignment mark as claimed in claim 2, it is characterised in that the first alignment grizzly bar group is included along the first party
To multiple first alignment grizzly bars arranged in parallel, and the second alignment grizzly bar group along the second direction including mutually putting down
Multiple second alignment grizzly bars that row is set.
5. alignment mark as claimed in claim 4, it is characterised in that multiple first alignments in the first alignment grizzly bar group
Grizzly bar is evenly spaced apart, and multiple second alignment grizzly bars in the second alignment grizzly bar group are evenly spaced apart.
6. the alignment mark as any one of claim 1-5, it is characterised in that the size of the alignment mark is 550 μ
m*550μm。
7. the alignment mark as any one of claim 1-5, it is characterised in that the material of the alignment mark is selected from gold
Any one or more of category, oxide, SiN and Si.
8. a kind of alignment methods for back side photoetching process, methods described includes：
On front wafer surface increase expose and formed two or more as any one of claim 1-5 to fiducial mark
Note；
The alignment mark is recognized according to the position coordinates of the alignment mark；And
Alignment mark alignment mark corresponding with mask on front wafer surface is aligned for back side photoetching, its
Alignment mark alignment mark corresponding on mask on middle front wafer surface is specular.
9. method as claimed in claim 8, it is characterised in that first being determined before the alignment mark is formed will be in chip just
The coordinate of the position of the alignment mark is formed on face.
10. method as claimed in claim 8, it is characterised in that the position of the alignment mark is randomly provided on front wafer surface
Put.
11. a kind of mask plate, including two or more and the alignment mark mirror image pair as any one of claim 1-5
The alignment mark of title.
12. a kind of semiconductor wafer, including two or more the alignment mark as any one of claim 1-5.
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| CN109425301A (en) * | 2017-08-21 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of measuring device and method of thicknesses of layers |
| CN111198478B (en) * | 2018-11-20 | 2024-02-06 | 长鑫存储技术有限公司 | Mask assembly and registration measurement method |
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| JPH07219212A (en) * | 1994-02-01 | 1995-08-18 | Orc Mfg Co Ltd | Deflection correcting device for photomask and its method |
| JP2002036373A (en) * | 2000-07-25 | 2002-02-05 | Sanyo Electric Co Ltd | Stereo lithographic apparatus |
| CN201138424Y (en) * | 2007-09-30 | 2008-10-22 | 芯硕半导体（合肥）有限公司 | Aligning mark mechanism for wafer aligning of projecting lens conversion |
| CN102540734A (en) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | Overlay testing method |
| CN103092011B (en) * | 2011-11-01 | 2015-08-26 | 上海微电子装备有限公司 | For the alignment device of etching system |
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