CN104865789A - mask and photoetching method - Google Patents
mask and photoetching method Download PDFInfo
- Publication number
- CN104865789A CN104865789A CN201510312558.8A CN201510312558A CN104865789A CN 104865789 A CN104865789 A CN 104865789A CN 201510312558 A CN201510312558 A CN 201510312558A CN 104865789 A CN104865789 A CN 104865789A
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- China
- Prior art keywords
- mask
- auxiliary pattern
- information
- alignment mark
- quick response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000001259 photo etching Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000004044 response Effects 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 4
- 238000011165 process development Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000008520 organization Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003556 assay Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VYMDGNCVAMGZFE-UHFFFAOYSA-N phenylbutazonum Chemical compound O=C1C(CCCC)C(=O)N(C=2C=CC=CC=2)N1C1=CC=CC=C1 VYMDGNCVAMGZFE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A mask plate is provided with a mask pattern, an alignment mark and an auxiliary pattern on a mask plate substrate, wherein the auxiliary pattern is a two-dimensional code. According to the mask and the photoetching method thereof, the problems of incomplete mask graph information recording, messy layout graphs and the like are solved by forming the quick, simple and convenient and low-cost auxiliary graphs at the edge part of the mask, the difficulty of process development can be reduced by the set auxiliary graphs, and the cost of the process development is reduced.
Description
Technical field
The present invention relates to integrated circuit (IC) etching mask processing technique field, particularly relate to and a kind ofly there is the novel mask of two-dimentional auxiliary pattern and utilize this mask to carry out the method for photoetching.
Background technology
Along with the development of integrated circuit technique, IC chip application is more and more extensive.The complexity of its lay photoetching mask plate is more and more higher, and cost also rises in exponential form, and the mask being therefore applicable to step-by-step movement (step) litho machine can gather increasing figure.General lay photoetching mask plate is made up of the exposure figure distributed, alignment mark, auxiliary pattern.Existing auxiliary pattern is generally the plate-making information of bar code composition, figure of auxiliary development etc.And one group of bar code can only comprise the information of 11 letter or numbers compositions, the simple information that some mask titles are such can only be comprised, and figure is not generally one group of exposure figure on mask, in order to reduce costs, mask can be tried one's best and increase some figures more, the information of the centre coordinate of each like this figure can only record in addition or graphically mark on each exposure figure side, so both have lost mask useful area, makes again the space of a whole page in disorder.
Summary of the invention
From the above mentioned, the object of the invention is to overcome above-mentioned technical difficulty, provide a kind of low cost, quick, simple auxiliary pattern manufacturing technology, so that improve mask utilization ratio.
For this reason, the invention provides a kind of mask, reticle substrate has mask graph, alignment mark, auxiliary pattern, wherein, described auxiliary pattern is Quick Response Code.
Wherein, Quick Response Code comprises the mask information about mask title, plate-making time, plate-making unit, the centre coordinate of each figure on mask, critical size and combination thereof.
Wherein, auxiliary pattern and alignment mark to be arranged on reticle substrate outside mask graph scope.
Wherein, auxiliary pattern is used as alignment mark simultaneously.
Wherein, alignment mark is at the center of the auxiliary pattern of Quick Response Code.
Present invention also offers a kind of photoetching method, comprise step: step 1, collect mask information; Step 2, is converted to two-dimension code pattern by mask information; Step 3, is transferred to two-dimension code pattern on reticle substrate as auxiliary pattern; Step 4, by comprising the litho machine identification auxiliary pattern of Quick Response Code recognizer to extract mask information; Step 5, adopts the mask comprising Quick Response Code auxiliary pattern to carry out photoetching as mask.
Wherein, mask packets of information is containing mask title, plate-making time, plate-making unit, the centre coordinate of each figure, critical size and combination thereof on mask.
Wherein, auxiliary pattern to be arranged on reticle substrate outside mask graph scope.
Wherein, auxiliary pattern is used as alignment mark simultaneously.
Wherein, comprise further after step 5, measurement current photolithographic obtains the relation between line size and mask information, feeds back the process conditions revising follow-up photoetching.
Wherein, by the information the collected classified packets such as title, plate-making time, plate-making organization according to mask, according to clockwise to graphical information arrangements all on mask, each group information branch separates, and group internal information comma separates.Use Quick Response Code converter the data sequenced to be converted to the auxiliary pattern of Quick Response Code, the Quick Response Code auxiliary pattern changed is converted to the data of gds form.
Wherein, step 3 comprises photoresist employing EUV, electron beam, ion beam exposure, developing process formation photoetching offset plate figure on mask, adopts etching technics to be transferred on reticle substrate by photoetching offset plate figure.
According to mask of the present invention and photoetching method thereof, mask graph information incomplete recording is solved by forming auxiliary pattern that is quick, easy, low cost in mask marginal portion, the problems such as space of a whole page figure is in disorder, the difficulty of process exploitation can be reduced by the auxiliary pattern of setting, reduce the expense of process exploitation.
Accompanying drawing explanation
Technical scheme of the present invention is described in detail referring to accompanying drawing, wherein:
Fig. 1 is the mask exposure datagraphic that with the addition of auxiliary pattern;
Fig. 2 shows the process flow diagram of the photoetching method adopting mask of the present invention.
Embodiment
Describe feature and the technique effect thereof of technical solution of the present invention in detail in conjunction with schematic embodiment referring to accompanying drawing, disclose have low cost, fast, the mask of simple auxiliary pattern and manufacturing technology thereof.It is pointed out that structure like similar Reference numeral representation class, term " first " used in the application, " second ", " on ", D score etc. can be used for modifying various device architecture or manufacturing process.These modify the space of not hint institute's modification device architecture or manufacturing process unless stated otherwise, order or hierarchical relationship.
As shown in Figure 1, comprise mask graph, alignment mark according to mask of the present invention, and comprise the auxiliary pattern that form is such as Quick Response Code extraly.In the edge of mask, there is multiple alignment mark, such as, represent alignment mark by cruciform pattern multiple shown in Fig. 1.Alignment mark is formed does not affect the blank parts of device function in the graphic, such as, correspond to the scribe line part between multiple chip/naked core in the marginal portion of whole wafer or wafer.Preferably, with the assay standard of the breach of wafer (Circular wafer excises an arc breach stayed, and is generally used for the location alignment purpose of mechanical arm or fixing base station in batch processing equipment) as alignment mark.Between alignment mark, the mask graph of (such as within the scope of outer most edge alignment mark) is selected according to the concrete device architecture of IC and manufacturing process, such as, be cmos device, FinFET, eeprom array, power semiconductor device etc.The line size of mask graph sets according to critical size (CD) value of semiconductor devices and existing advanced photolithography techniques node, such as CD be less than 22nm, such as 14nm and adopt EUV lithography, electron beam or ion beam direct-write photoetching time, the line size of mask graph also will reach nanometer scale, such as, be also less than 22nm.Follow-up to when on substrate (such as Si wafer) or substrate (such as glass, plastics, pottery or flexible transparent substrate), photoresist carries out exposure imaging, it is this that to have reached the photoresist line size that nano level mask obtains making to develop also be nanoscale, cannot be checked intuitively by naked eyes or simple and easy detection system, be unfavorable for adjusting exposure/lithography process parameters in time between adjacent batch.
For this reason, the present invention has set up the auxiliary pattern of Quick Response Code on mask, it such as comprises the mask information such as centre coordinate, critical size CD value of each figure on mask title, plate-making time, plate-making unit, mask, observation development degree is carried out by two-dimension code pattern very easily so that follow-up, control the process of development, reduce the engineer testing of development, reduce process exploitation expense.Preferably, auxiliary pattern is arranged in the white space on mask outside mask graph (also namely outside domain effective range but within the mask space of a whole page), such as, the upper right corner shown in Fig. 1.Preferably, by the information the collected packet classification such as title, plate-making time, plate-making organization according to mask, according to graphical information arrangements all on arranged clockwise mask.Each group information branch separates, and group internal information comma separates.
More preferably, (not shown) in the present invention's specific embodiment, auxiliary pattern is also used as alignment mark simultaneously, such as, in cross shape substantially centered by alignment mark, auxiliary pattern two-dimensional encoded, has the square array (black-and-white two color or GTG different) of arranging with predetermined regular intervals at cruciform central intra-zone thus contains above-described multiple mask information.Or the solid or hollow cruciform pattern of auxiliary pattern central authorities is used as alignment mark, and the marginal portion outside auxiliary pattern central authorities adopts Quick Response Code to fill.At this, when utilizing two-dimentional auxiliary pattern simultaneously as alignment mark, in post-exposure process, utilize naked eyes or easy equipment using low resolution, large-sized cross figure as alignment mark, and utilize sensor, automatic detection equipment using high resolving power, undersized Quick Response Code (in cross figure) as auxiliary pattern with automatic acquisition mask information.So, mask utilization ratio can be improved further, reduce costs.
As shown in Figure 2, show according to the process flow diagram that have employed the photoetching method of mask shown in Fig. 1 of the present invention.Wherein, photoetching method comprises the following steps:
Step 1, collection mask information.Collect the specifying information of the mask needing processing, comprise the centre coordinate of each figure on mask title, plate-making time, plate-making unit, mask, the mask information such as critical size CD value.
Step 2, Graphic Exchanging.By the information the collected classified packets such as title, plate-making time, plate-making organization according to mask, according to clockwise to graphical information arrangements all on mask.Each group information branch separates, and group internal information comma separates.Use Quick Response Code converter the data sequenced to be converted to the auxiliary pattern of Quick Response Code, the Quick Response Code auxiliary pattern changed is converted to the data of gds form, insert in the exposure data handled well.Concrete, Quick Response Code auxiliary pattern outside mask data active graphical scope, and within mask space of a whole page scope, as shown in Figure 1.
Step 3, Graphic transitions.By exposure, the mask exposure datagraphic that with the addition of Quick Response Code transfers on photoresist by developing process, and photoresist is preferably EUV, electron-beam direct writing, ion beam and the special photoresist such as directly writes.Adopting photoetching offset plate figure as sheltering again, carrying out etching technics and photoetching offset plate figure is transferred on reticle substrate.Use remove photoresist liquid remove photoresist, clean up mask, thus obtain the mask of complete mask exposure figure.
Step 4, figure identification.Convert barcode recognizer on litho machine to Quick Response Code scanner, the mask handled well is loaded in litho machine, the information of all figures on mask can be obtained by the two-dimension code pattern on Quick Response Code recognizer scanning mask.
Subsequently, graphical information is inserted in exposure file, can post-exposure operation be carried out, also namely utilizing the mask with Quick Response Code auxiliary pattern as sheltering, etching processing being carried out to substrate or substrate, mask graph is transferred on substrate or substrate.
Preferably, after substrate or substrate photoetching, etching, by optical sensor system self-verifying or carry out electrical measurement extract characteristic parameter, mask graph under measurement present lot exposure technology condition and current etching obtain the size relationship between final lines, this size relationship is fed back to mask manufacturing system and litho machine, to revise the exposure technology condition of subsequent batches, thus improve device lines precision.
According to mask of the present invention and photoetching method thereof, mask graph information incomplete recording is solved by forming auxiliary pattern that is quick, easy, low cost in mask marginal portion, the problems such as space of a whole page figure is in disorder, the difficulty of process exploitation can be reduced by the auxiliary pattern of setting, reduce the expense of process exploitation.
Although the present invention is described with reference to one or more exemplary embodiment, those skilled in the art can know without the need to departing from the scope of the invention and make various suitable change and equivalents to device architecture or method flow.In addition, can be made by disclosed instruction and manyly may be suitable for the amendment of particular condition or material and not depart from the scope of the invention.Therefore, object of the present invention does not lie in and is limited to as realizing preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiments fallen in the scope of the invention.
Claims (10)
1. a mask, reticle substrate has mask graph, alignment mark, auxiliary pattern, and wherein, described auxiliary pattern is Quick Response Code.
2. mask as claimed in claim 1, wherein, Quick Response Code comprises the mask information about the centre coordinate of each figure on mask title, plate-making time, plate-making unit, mask, critical size and combination thereof.
3. mask as claimed in claim 1, wherein, auxiliary pattern and alignment mark to be arranged on reticle substrate outside mask graph scope.
4. mask as claimed in claim 1, wherein, auxiliary pattern is used as alignment mark simultaneously.
5. mask as claimed in claim 4, wherein, alignment mark is at the center of the auxiliary pattern of Quick Response Code.
6. a photoetching method, comprises step:
Step 1, collects mask information;
Step 2, is converted to two-dimension code pattern by mask information;
Step 3, is transferred to two-dimension code pattern on reticle substrate as auxiliary pattern;
Step 4, by comprising the litho machine identification auxiliary pattern of Quick Response Code recognizer to extract mask information;
Step 5, adopts the mask comprising Quick Response Code auxiliary pattern to carry out photoetching as mask.
7. photoetching method as claimed in claim 6, wherein, mask packets of information is containing the centre coordinate of each figure on mask title, plate-making time, plate-making unit, mask, critical size and combination thereof.
8. photoetching method as claimed in claim 6, wherein, auxiliary pattern to be arranged on reticle substrate outside mask graph scope.
9. photoetching method as claimed in claim 6, wherein, auxiliary pattern is used as alignment mark simultaneously.
10. photoetching method as claimed in claim 6, wherein, comprises after step 5 further, and measurement current photolithographic obtains the relation between line size and mask information, feeds back the process conditions revising follow-up photoetching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510312558.8A CN104865789A (en) | 2015-06-08 | 2015-06-08 | mask and photoetching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510312558.8A CN104865789A (en) | 2015-06-08 | 2015-06-08 | mask and photoetching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104865789A true CN104865789A (en) | 2015-08-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510312558.8A Pending CN104865789A (en) | 2015-06-08 | 2015-06-08 | mask and photoetching method |
Country Status (1)
| Country | Link |
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| CN (1) | CN104865789A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105740540A (en) * | 2016-01-29 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | Method for searching characteristic graphs of layouts in mask design |
| CN109300408A (en) * | 2017-07-25 | 2019-02-01 | 乐金显示有限公司 | Luminous display unit and its manufacturing method |
| WO2019024193A1 (en) * | 2017-08-01 | 2019-02-07 | 武汉华星光电半导体显示技术有限公司 | Mask |
| US10353249B2 (en) | 2016-06-01 | 2019-07-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Thin film transistor substrate and liquid crystal display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102880892A (en) * | 2012-08-30 | 2013-01-16 | 天津芯硕精密机械有限公司 | Method for adding barcodes in real time during exposure of mask-free photoetching machine |
| CN103091974A (en) * | 2013-02-27 | 2013-05-08 | 上海华力微电子有限公司 | Photolithography mask structure |
| US20130337370A1 (en) * | 2012-06-13 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and method for forming the same |
| CN103869603A (en) * | 2012-12-14 | 2014-06-18 | 上海空间电源研究所 | Photolithographic plate assembly and photolithographic alignment accuracy detection method |
| CN104597724A (en) * | 2015-02-05 | 2015-05-06 | 中国科学院微电子研究所 | Method for processing nano-scale fine pattern |
-
2015
- 2015-06-08 CN CN201510312558.8A patent/CN104865789A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130337370A1 (en) * | 2012-06-13 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and method for forming the same |
| CN102880892A (en) * | 2012-08-30 | 2013-01-16 | 天津芯硕精密机械有限公司 | Method for adding barcodes in real time during exposure of mask-free photoetching machine |
| CN103869603A (en) * | 2012-12-14 | 2014-06-18 | 上海空间电源研究所 | Photolithographic plate assembly and photolithographic alignment accuracy detection method |
| CN103091974A (en) * | 2013-02-27 | 2013-05-08 | 上海华力微电子有限公司 | Photolithography mask structure |
| CN104597724A (en) * | 2015-02-05 | 2015-05-06 | 中国科学院微电子研究所 | Method for processing nano-scale fine pattern |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105740540A (en) * | 2016-01-29 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | Method for searching characteristic graphs of layouts in mask design |
| CN105740540B (en) * | 2016-01-29 | 2018-10-26 | 上海华虹宏力半导体制造有限公司 | The lookup method of the pattern image of domain in mask plate design |
| US10353249B2 (en) | 2016-06-01 | 2019-07-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Thin film transistor substrate and liquid crystal display panel |
| CN109300408A (en) * | 2017-07-25 | 2019-02-01 | 乐金显示有限公司 | Luminous display unit and its manufacturing method |
| US11398501B2 (en) | 2017-07-25 | 2022-07-26 | Lg Display Co., Ltd. | Light emitting display device and method of manufacturing the same |
| WO2019024193A1 (en) * | 2017-08-01 | 2019-02-07 | 武汉华星光电半导体显示技术有限公司 | Mask |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Guanya Inventor after: Li Xintao Inventor after: Li You Inventor after: Zhang Weihong Inventor after: Zhang Jianhong Inventor after: Liu Ming Inventor after: Xie Changqing Inventor after: Long Shibing Inventor after: Shao Xin Inventor after: Niu Jiebin Inventor before: Wang Guanya |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150826 |
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| RJ01 | Rejection of invention patent application after publication |