CN103832966B - Formation method and the detection method of semiconductor devices - Google Patents
Formation method and the detection method of semiconductor devices Download PDFInfo
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- CN103832966B CN103832966B CN201210485213.9A CN201210485213A CN103832966B CN 103832966 B CN103832966 B CN 103832966B CN 201210485213 A CN201210485213 A CN 201210485213A CN 103832966 B CN103832966 B CN 103832966B
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Abstract
The invention discloses in a kind of formation method and detection method of semiconductor devices, forming after rear indicia, double expose in front at wafer, obtain the first mark and the second mark, can detect described the first mark and the second mark by existing equipment, thereby learnt the structure situation of device by the correlation of the first mark and the second mark, the risk of having avoided manual operation to bring, simultaneously because described the first mark and the second mark are positioned at same layer face, the coarse problem of reading is also resolved, can also use manpower and material resources sparingly to a great extent, be conducive to High-efficient Production.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, particularly a kind of formation method and inspection of semiconductor devicesSurvey method.
Background technology
Along with the fast development of integrated circuit, various demands are also increasingly sophisticated. MEMS (MicroElectroMechanicalSystems, MEMS) although the time of the existing many decades of developing history, in recent years along withThe fast development of the industries such as smart mobile phone, automotive electronics, medical electronics, Internet of Things, to gyroscope, radio frequency(RF) demand of the MEMS component products such as MEMS element, MEMS microphone continues soaring. This alsoIn the manufacture process of MEMS element, inevitably to face various challenges.
In the top layer wafer process (CapWaferProcess) of MEMS element, conventionally need overleafForm rear indicia, aim at rear indicia by exposure bench afterwards, then according to the ratio of mask plate patterns 1:1In wafer frontside exposure, obtain front mark, in order to learn the directed self assembly (Directed of formationSelf-Assembly, DSA) layer situation, need described rear indicia and front mark overlapping as much as possible.
Technical staff is the overlapping situation that need to understand these two kinds of marks, and at present way great majority are in the industryAdopt infrared transmitting to detect the overlapping situation of two kinds of marks. At present, this equipment can be divided into automatically and handMoving two kinds, and for some enterprises, may not possess due to some factor the automatic detection of high priceEquipment, and manually operated equipment will inevitably bring more risk, and for large batch of production, adoptNeed to expend very large manpower and time with manual operation, be unpractical. Meanwhile, adopt infrared transmittingDetecting can be due to the back side and the positive different image fog that cause of focal length, and therefore reading can not ensure essenceReally.
Therefore, can address the above problem, for enhancing productivity, ensure the yield of product, have emphaticallyLarge meaning.
Summary of the invention
The object of the present invention is to provide a kind of formation method and detection method of semiconductor devices, existing to solveHave that detection method cost in technique is high, the problem of the impact that has a big risk.
For solving the problems of the technologies described above, the invention provides a kind of formation method of semiconductor devices, comprising:
Wafer is provided, and the back side of described wafer is formed with rear indicia;
Exposing for the first time in front at described wafer, forms the first mark;
By described wafer Rotate 180 °, expose for the second time, form the second mark.
Optionally, for the formation method of described semiconductor devices, described the first mark and the second mark are allComprise OM mark and OVL mark.
Optionally, for the formation method of described semiconductor devices, described OM mark comprises two X marksNote and two Y marks.
Optionally, for the formation method of described semiconductor devices, described X mark and Y marker spacingBe evenly arranged in wafer periphery.
Optionally, for the formation method of described semiconductor devices, described X mark all has multiple scales,Described two X marks are respectively an X mark and the 2nd X mark, and the length of a described X mark is greater thanThe length of the 2nd X mark.
Optionally, for the formation method of described semiconductor devices, each scale of a described X markWidth be greater than the width of each scale of described the 2nd X mark.
Optionally, for the formation method of described semiconductor devices, the adjacent scale of a described X markBetween distance be less than the distance between the adjacent scale of described the 2nd X mark.
Optionally, for the formation method of described semiconductor devices, described Y mark by described X mark withCrystal circle center is that axle half-twist obtains.
Optionally, for the formation method of described semiconductor devices, described OVL mark is positioned at described waferCenter.
Optionally, for the formation method of described semiconductor devices, the described OVL mark knot that is centrosymmetricStructure.
Optionally, for the formation method of described semiconductor devices, described OVL mark comprises 4 large marksNote and 4 tick marks.
Optionally, for the formation method of described semiconductor devices, described OVL mark is nine grids and arranges.
Optionally, for the formation method of described semiconductor devices, in the middle of described nine grids, lattice are vacant.
The invention provides a kind of device that the formation method of semiconductor devices as above is obtained detectsMethod, comprising:
Adopt light microscope to detect described OM and be marked at the offset deviation of X and Y-direction;
Adopt alignment checkout gear detect described OVL be marked at the displacement of X and Y-direction and amplify deviation,Rotating deviation and quadrature bias;
Judged the structure quality of device by the deviation result of the OM mark detecting and OVL mark.
Optionally, for the detection method of described semiconductor devices, detect the tolerance model of described OM markEnclosing is 0 ~ 7.5 μ m.
Optionally, for the detection method of described semiconductor devices, detect the tolerance model of described OVL markEnclosing is 0 ~ 5 μ m.
In the formation method and detection method of semiconductor devices provided by the invention, forming after rear indicia,Double exposing in front at wafer, obtains the first mark and the second mark, can establish by existingStandby described the first mark and the second mark are detected, thereby by the mutual pass of the first mark and the second markThe structure situation of device is learnt by system, and the risk of having avoided manual operation to bring, simultaneously due to described the first markBe positioned at same layer face with the second mark, the coarse problem of reading is also resolved, can also be largelyOn use manpower and material resources sparingly, be conducive to High-efficient Production.
Brief description of the drawings
Fig. 1 is the signal that the formation method of the semiconductor devices of the embodiment of the present invention has the wafer of rear indiciaFigure;
Fig. 2 is the schematic diagram exposing for the first time in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 3 is the schematic diagram exposing for the second time in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 4 is the top view after exposure for the first time in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 5 is the structural representation of an X mark in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 6 is the structural representation of the 2nd X mark in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 7 is the structural representation of OVL mark in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 8 is the top view after exposure for the second time in the formation method of semiconductor devices of the embodiment of the present invention;
Fig. 9 is the position relationship signal of OM mark in the detection method of semiconductor devices of the embodiment of the present inventionFigure.
Detailed description of the invention
Formation method and detection below in conjunction with the drawings and specific embodiments to semiconductor devices provided by the inventionMethod is described in further detail. According to the following describes and claims, advantages and features of the invention willClearer. It should be noted that, accompanying drawing all adopts the form of simplifying very much, only in order to convenient, auxiliary lucidlyThe object of the embodiment of the present invention is described.
As shown in Figure 1, first provide wafer 10, the back side of described wafer 10 is formed with rear indicia M, exampleAs being two rear indicia M1 and the M2 being positioned on same diameter, it will be used as the right of subsequent techniqueQuasi-mark, also as described in the background art, is carrying out forming front mark after face exposure, makes back side markNote and front mark are overlapping, to judge whether DSA layer has deviation at this point. Due to the problem of focal length, infraredAnalyze and be difficult to accurate measurement.
Please refer to Fig. 2, by analysis, described deviation comprises the deviation between light shield and wafer, is in this case convenient toBright, suppose that light shield and wafer respectively have a plane coordinate system, after aiming at, two plane coordinate systems shouldWhen overlapping, but in fact can be completely not overlapping, be exactly the deviation between described light shield and wafer 10 so,Be designated as S. In the process of exposure, also can there is exposure bias, be designated as W, rear indicia M1 and positive markNote A1(is due to the symmetry of wafer, taking a side as example, lower with) deviation be S+W. As shown in Figure 3,Find through research, if on this basis by wafer 10 Rotate 180s °, and exposure again, rear indiciaThe deviation of the front mark B1 of M2 and this exposure gained is W-S, so the front mark after double exposureDeviation between A2 and B1 is 2W, and conventionally S to compare W be very little, that is to say that S is to DSA layerDeviation effects be negligible, and measure double exposure after front mark between deviation, i.e. 2W, isCan adopt existing equipment to carry out, can ensure precision, therefore can form twice by double exposure simultaneouslyMark, judges the situation of DSA layer.
Fig. 4 ~ Fig. 9 will elaborate the mark of double exposure process formation. As shown in Figure 4, at wafer justFace exposes for the first time, forms the first mark, and concrete, described the first mark comprises OM mark and OVLMark. For convenience of explanation, introduce XOY rectangular coordinate system, described OM mark taking the wafer center of circle as initial pointComprise two X marks, an X mark (being designated as X1) and the 2nd X mark (being designated as X2), two YMark, a Y mark (being designated as Y1) and the 2nd Y mark (being designated as Y2). Described two X marks lean onNearly X-axis, is positioned at the peripheral of wafer and distributes axisymmetricly with Y-axis, by X-axis, X1 and X2 taking O asAxle turns clockwise 90 °, obtains two Y marks. Here be the structural relation to X mark and Y markBe described, those skilled in the art are to be understood that. Described OVL mark is in order for example to measure rotation, justThe factors such as friendship and magnifying power are introduced, and its entirety is positioned at the center of wafer, and it comprises 4 large marks (noteFor C1) and 4 tick marks (being designated as C2), described OVL mark is nine grids to be arranged, for example, can be the3 large marks of one row, second row head is a large mark, and centre is empty, and second row end is a tick marks,The 3rd row is 3 tick marks, and OVL mark is centrosymmetric from putting in order.
Please refer to Fig. 5 and Fig. 6, it is respectively the structural representation of X1 and X2, and the length of X1 and X2 is notWith, such as being the length that the length of X1 is greater than X2, X1 and X2 all comprise the scale of similar number,Be preferably odd number, and each scale has certain width, at this, the width of the scale of X1 is greater than X2The width of scale, the width of the scale of for example X1 can be 6000nm, the width of the scale of X2 can be4000nm. Distance between each scale of X1 and X2 is identical in this mark, not between the scale of isolabelingDistance can be different, and the spacing of the scale of for example X1 is 2000nm, and the spacing of the scale of X2 is 3000nm.The height of the middle scale of each mark is preferably higher than other scales, and the height of described other scales is preferredFor equating, to can obtain intuitively center, for example the height of non-middle scale is 6000nm,The height of middle scale can be 9000nm or 10000nm, thereby has both been conducive to differentiate, and is unlikely to again highThe poor excessive mark deformity that causes of degree, impact is measured.
Please refer to Fig. 7, it is the schematic diagram of OVL mark, and C1 and C2 can adopt the OVL of existing patternMark, comprises the lines of two directions Xs and the lines of two Y-directions, and C2 can be the basis at C1On dwindle, can be also that the length of lines and spacing are shortened by demand. Concrete linear and arrangementSituation does not repeat at this.
Then, please refer to Fig. 8, by described wafer Rotate 180 °, expose for the second time, form the second markNote. Because be obtains according to identical light shield and identical exposure settings after 180 ° of rotations, therefore described secondMark and the first mark are centrosymmetric, for example X11 and X1 Central Symmetry. The line of OVL mark in Fig. 8Bar thickness is not both in order to distinguish double exposure.
After double exposure, the first mark obtaining and the second mark can be used for detecting, thereby canObtain the distribution situation of DSA layer. The device that method obtains that forms to the semiconductor devices by described is examinedThe method of surveying, comprising:
Adopt light microscope to detect described OM and be marked at the offset deviation of X and Y-direction, for example, can makeWith ADI(AfterDevelopmentInspection) equipment detects for the first time the OM mark that exposure obtainsPosition relationship between the OM mark of note and exposure acquisition for the second time. As shown in Figure 9, X2 and X11 are at XThe deviation of direction is 0, and X2 and X11 may not be 0 in the deviation of directions X conventionally, by above-mentioned to XThe scale of mark and the setting of scale spacing, can calculate to obtain X by the distance of calculating between corresponding scaleThe deviation of direction. For example can be as the criterion and calculate with middle scale, also can be in advance by the quarter of X2 and X11Degree front end (or axis etc.) corresponding relation comes out, if the first scale of for example X11 and X2 firstThe alignment of scale front end, directions X deviation is 9000nm. Consider and also have X21 and X1, can be by twoGroup result is carried out combination and is obtained actual directions X deviation. In like manner, Y21 and Y1, Y11 and Y2 are used forMeasure the deviation of Y-direction. The mensurable scope that this method detects described OM mark is 0 ~ 7.5 μ m, precisionCan reach 0.5 μ m.
Adopt alignment to detect (overlay) device, the model that can be for example KLA-tencor is archer5Alignment checkout equipment, detect the displacement (shift) that described OVL is marked at X and Y-direction and amplify deviation(Exp), rotating deviation (Rot) and quadrature bias (Non-orth). By measuring C21 and C1, C11And between C2, position relationship obtains described OVL and is marked at the displacement of X and Y-direction and amplifies deviation, rotationDeviation and quadrature bias. The method insider should be familiar with, and repeats no more. This method detects described OVLThe mensurable scope of mark is 0 ~ 5 μ m, and precision can reach 0.001 μ m.
Judged the structure quality of device by the deviation result of the OM mark detecting and OVL mark. For example existThis can be the distribution situation that detects DSA layer.
Formation method and the detection method of the semiconductor devices providing in such scheme, by carrying out to waferSingle exposure, and followed by by wafer Rotate 180 °, proceed to expose for the second time, obtain and there is center pairClaim the first mark and second mark of structure, by measuring the mutual pass between the first mark and the second markSystem, whether the distribution that just can judge device is reasonable, thereby avoided employing infrared detection due to focal lengthDifferent and the precision problem that causes has been stopped the harmful effect that manual operation may bring simultaneously, both effectiveUtilize existing equipment, saved again substantial contribution and manpower, High-efficient Production has been significant.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the present invention inventionSpirit and scope. Like this, if of the present invention these amendment and modification belong to the claims in the present invention andWithin the scope of equivalent technologies, the present invention is also intended to including these changes and modification.
Claims (16)
1. a formation method for semiconductor devices, is characterized in that, comprising:
Wafer is provided, and the back side of described wafer is formed with rear indicia;
Exposing for the first time in front at described wafer, forms the first mark;
By described wafer Rotate 180 °, expose for the second time, form the second mark.
2. the formation method of semiconductor devices as claimed in claim 1, is characterized in that, described the first markNote and the second mark all comprise OM mark and OVL mark.
3. the formation method of semiconductor devices as claimed in claim 2, is characterized in that, described OM markNote comprises two X marks and two Y marks.
4. the formation method of semiconductor devices as claimed in claim 3, is characterized in that, described X markWith the wafer periphery that is arranged in of Y marker spacing, and be all axially symmetric structure.
5. the formation method of semiconductor devices as claimed in claim 3, is characterized in that, described X markAll have multiple scales, described two X marks are respectively an X mark and the 2nd X mark, a described XThe length of mark is greater than the length of the 2nd X mark.
6. the formation method of semiconductor devices as claimed in claim 5, is characterized in that, a described XThe width of each scale of mark is greater than the width of each scale of described the 2nd X mark.
7. the formation method of semiconductor devices as claimed in claim 5, is characterized in that, a described XDistance between the adjacent scale of mark is less than the distance between the adjacent scale of described the 2nd X mark.
8. the formation method of semiconductor devices as claimed in claim 7, is characterized in that, described Y markObtained taking crystal circle center as axle half-twist by described X mark.
9. the formation method of semiconductor devices as claimed in claim 2, is characterized in that, described OVLMark is positioned at described crystal circle center.
10. the formation method of semiconductor devices as claimed in claim 9, is characterized in that, described OVLThe mark structure that is centrosymmetric.
The formation method of 11. semiconductor devices as claimed in claim 10, is characterized in that, described OVLMark comprises 4 large marks and 4 tick marks.
The formation method of 12. semiconductor devices as claimed in claim 10, is characterized in that, described OVLMark is nine grids and arranges.
The formation method of 13. semiconductor devices as claimed in claim 12, is characterized in that, described nine palacesIn the middle of lattice, lattice are vacant.
The device that the formation method of 14. pairs of semiconductor devices as described in claim 2 ~ 13 any one obtainsThe method detecting, is characterized in that, comprising:
Adopt light microscope to detect described OM and be marked at the offset deviation of X and Y-direction;
Adopt alignment checkout gear detect described OVL be marked at the displacement of X and Y-direction and amplify deviation,Rotating deviation and quadrature bias;
Judged the structure quality of device by the deviation result of the OM mark detecting and OVL mark.
The detection method of 15. semiconductor devices as claimed in claim 14, is characterized in that, described in detectionThe tolerance scope of OM mark is 0 ~ 7.5 μ m.
The detection method of 16. semiconductor devices as claimed in claim 14, is characterized in that, described in detectionThe tolerance scope of OVL mark is 0 ~ 5 μ m.
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| TWI673807B (en) * | 2015-10-13 | 2019-10-01 | 聯華電子股份有限公司 | Method for checking overlay measurement recipe and overlay measurement process |
| CN107452717B (en) * | 2017-08-22 | 2018-12-14 | 长江存储科技有限责任公司 | Semiconductor making method |
| CN109950133B (en) * | 2019-03-14 | 2021-07-27 | 北京大学深圳研究生院 | Preparation method of silicon carbide epitaxial wafer convenient to identify |
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| US7180593B2 (en) * | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
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| KR20070095034A (en) * | 2006-03-20 | 2007-09-28 | 삼성전자주식회사 | Method for inspecting overlay |
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