CN109950133B - Preparation method of silicon carbide epitaxial wafer convenient to identify - Google Patents
Preparation method of silicon carbide epitaxial wafer convenient to identify Download PDFInfo
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- CN109950133B CN109950133B CN201910194844.7A CN201910194844A CN109950133B CN 109950133 B CN109950133 B CN 109950133B CN 201910194844 A CN201910194844 A CN 201910194844A CN 109950133 B CN109950133 B CN 109950133B
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Abstract
The application discloses a preparation method of a silicon carbide epitaxial wafer convenient to identify. The preparation method comprises the steps of rotating the exposure pattern for one time or a plurality of times by an angle larger than 0 degree and smaller than 360 degrees in the photoetching exposure process of the photoetching machine on the silicon carbide epitaxial wafer, and distinguishing and identifying the silicon carbide epitaxial wafer according to the position or the rotating angle of the rotated exposure pattern. According to the preparation method, the prepared silicon carbide epitaxial wafer can be distinguished through visual appearance, namely the number of the silicon carbide epitaxial wafer can be directly identified according to the rotation condition of each exposure pattern; in addition, the identification mark prepared by the method can not be worn and disappear in subsequent processing, the use trouble caused by unclear identification is avoided, and the problem that the existing wafer mark is worn and abraded is solved. The preparation method is simple and easy to operate, not only can be compatible with the existing production line, but also can not influence the existing production flow and product quality, and saves the production cost.
Description
Technical Field
The application relates to the field of preparation of silicon carbide epitaxial wafer, in particular to a preparation method of a silicon carbide epitaxial wafer convenient to identify.
Background
Silicon carbide (SIC) as a new generation of wide bandgap semiconductor material has extremely excellent performance in the field of power semiconductors, and is the leading edge and future direction of power semiconductor device development. SiC (silicon carbide) is a compound semiconductor material composed of silicon (Si) and carbon (C), and has excellent electrical properties: for example, the forbidden band width is 2.3-3.3 eV, which is 3 times of Si; the breakdown field strength is 0.8E 16-3E 16V/cm and is 10 times that of Si; the saturation drift velocity is 2E7cm/s, which is 2.7 times of that of Si; the thermal conductivity was 4.9W/cm K, which is about 3.2 times that of Si. The characteristics enable the silicon carbide material to have the excellent characteristics of large forbidden band width, high breakdown field strength, large thermal conductivity, large saturation velocity, high maximum working temperature and the like, so that the silicon carbide electronic device can work under the environment of high voltage, high calorific value and high frequency. Therefore, silicon carbide is considered to be the best material for making high power electronics; compared with gallium arsenide, silicon and other materials, silicon carbide has overwhelming advantages in the aspects of high pressure and high temperature.
Currently available silicon carbide epitaxial wafer wafers include 2 inches, 3 inches, 4 inches, 6 inches, and the like. To distinguish between individual silicon carbide epitaxial wafer wafers, the wafers are typically numbered. The wafer number mark is generally engraved on the back surface of the wafer. However, in the actual production process, it is found that, in the process of producing and manufacturing the silicon carbide semiconductor, with the progress of multiple wet or dry etching processes, particularly the progress of processes such as back thinning and back gold, the serial number of the wafer originally etched on the back of the silicon carbide epitaxial wafer is gradually blurred until the wafer cannot be identified; this brings about a great trouble in the use of the silicon carbide epitaxial wafer.
Disclosure of Invention
The application aims to provide a novel preparation method of a silicon carbide epitaxial wafer convenient to identify.
The following technical scheme is adopted in the application:
the application discloses a preparation method of a silicon carbide epitaxial wafer convenient to identify, which comprises the steps of rotating an exposure pattern for one time or a plurality of times by an angle larger than 0 degree and smaller than 360 degrees in the photoetching exposure process of a photoetching machine on the silicon carbide epitaxial wafer, and distinguishing and identifying different silicon carbide epitaxial wafer according to the position or the rotating angle of the rotated exposure pattern.
The silicon carbide epitaxial wafer is generally divided into a plurality of parts, and then a stepper is used for carrying out exposure for a plurality of times, for example, the exposure is divided into 1-200 parts for 1-200 times, and the exposure is carried out for 30-60 times compared with the conventional exposure, wherein the exposure is carried out for 30-60 times; each exposure is independently etching an exposed pattern at the corresponding location. In view of the problem that the serial number of the existing silicon carbide epitaxial wafer is easy to wear or even disappear in the processing process, the method creatively provides that graphs with different rotation angles are obtained by rotating the angle of each exposure so as to distinguish each silicon carbide epitaxial wafer; therefore, the silicon carbide epitaxial wafer prepared by the preparation method has the advantage of convenience in identification. The number of the silicon carbide epitaxial wafer can be judged and read according to the position of the rotating graph; and, more importantly, the rotating pattern does not suffer from wear loss.
It should be further noted that in the preparation method of the present application, the lithography exposure of the lithography machine is a process for processing the front side of the silicon carbide epitaxial wafer; therefore, the preparation method of the application is to prepare the identification mark on the front side of the silicon carbide epitaxial wafer under the condition of not adding other identification patterns, and is completely different from the conventional thinking of numbering and marking on the back side of the wafer.
Preferably, in the preparation method of the silicon carbide epitaxial wafer, the whole silicon carbide epitaxial wafer is exposed for n times; rotating the first exposure graph of the first silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest exposures; rotating the graph of the second exposure of the second silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest of the exposures; rotating the graph of the third exposure of the third silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest of exposures; and by analogy, distinguishing or numbering each silicon carbide epitaxial wafer is realized.
Although the method is simple and effective in that the number of the silicon carbide epitaxial wafer is represented by the exposure position of the selected pattern by rotating the pattern for a specific exposure, the number of the number is limited by the number of exposures of the silicon carbide epitaxial wafer, that is, only 30 to 60 silicon carbide epitaxial wafers can be numbered.
Preferably, in the preparation method of the silicon carbide epitaxial wafer, the whole silicon carbide epitaxial wafer is exposed for n times; wherein, the partially exposed graph rotates by an angle larger than 0 degree and smaller than 360 degrees, and the other partially exposed graph does not rotate; the exposure pattern not rotated is regarded as 0, the exposure pattern rotated is regarded as 1, and each silicon carbide epitaxial wafer is divided or numbered in a binary manner.
It should be noted that, in an implementation manner of the present application, a rotating graph and a non-rotating graph may be combined with a binary system, numbering is performed through the binary system, and only the graph of last ten times needs to be controlled to rotate or not rotate, so that the number of tens of thousands of numbers can be reached, and the requirements of mass production and numbering can be met. As for the reading of the serial number, manual reading or electronic scanning may be adopted.
Preferably, in the preparation method of the silicon carbide epitaxial wafer, the whole silicon carbide epitaxial wafer is subjected to n times of exposure, and every nine times of exposure are combined into a group when the complementary exposure operation is carried out; rotating the pattern of one exposure in the first nine exposures by an angle larger than 0 degree and smaller than 360 degrees during processing, so that the sub-digit number of the exposure is the single digit number of the silicon carbide epitaxial wafer; the number of the second digit of the rotating pattern in the subsequent nine exposures, namely the ten-digit number of the silicon carbide epitaxial wafer, is 0 without the rotating pattern; and by analogy, distinguishing or numbering each silicon carbide epitaxial wafer is realized.
It should be noted that although the number of the binary numbering process is large, manual reading is usually used to decimal reading; thus, in one implementation of the present application, every nine exposures are taken as a group, and the number of exposure times of the rotated pattern represents 1-9 nine digits; in this way, thousands of silicon carbide epitaxial wafer can be numbered after 36 exposures, and thousands of silicon carbide epitaxial wafer can be numbered after 45 exposures, and the requirements of mass production and numbering can be met.
It is understood that the key to the present application is to distinguish by the rotation angle, and how many degrees of the specific rotation can be determined according to specific production or use requirements, as long as the specific rotation can be distinguished from the non-rotation pattern.
Preferably, the preparation method of the silicon carbide epitaxial wafer specifically comprises the following steps,
1) placing the silicon carbide epitaxial wafer on a stepping photoetching machine;
2) according to the presetting, when a certain time of exposure, the stepper rotates the pattern of the exposure of the preset time by an angle which is more than 0 degree and less than 360 degrees;
3) and after the exposure of the rotating pattern is finished, restoring the stepping photoetching machine to a normal angle, and continuing to finish the exposure at the normal angle.
The beneficial effect of this application lies in:
according to the preparation method of the silicon carbide epitaxial wafer, the serial number of the silicon carbide epitaxial wafer can be directly identified through visual appearance distinction, namely the rotation condition of each exposure pattern; in addition, the identification mark prepared by the method can not be worn and disappear in subsequent processing, the use trouble caused by unclear identification is avoided, and the problem that the existing wafer mark is worn and abraded is solved. In addition, the preparation method is simple and easy to operate, not only can be compatible with the existing production line, but also cannot influence the existing production flow and product quality, and the production cost is saved.
Drawings
FIG. 1 is a schematic view of a stepper used in an embodiment of the present application for dividing a silicon carbide epitaxial wafer into a plurality of portions for exposure;
FIG. 2 is a schematic illustration of the numbering of a first epitaxial silicon carbide wafer in an example of the present application;
FIG. 3 is a schematic illustration of a second silicon carbide epitaxial wafer numbering in an embodiment of the present application;
FIG. 4 is a schematic representation of the third silicon carbide epitaxial wafer numbering in an embodiment of the present application;
FIG. 5 is a schematic illustration of the numbering of a fourth epitaxial silicon carbide wafer in an example of the present application;
FIG. 6 is a schematic representation of the numbering of the twenty-fifth epitaxial silicon carbide wafer in the examples of this application.
Detailed Description
The serial number of the existing silicon carbide epitaxial wafer is inevitably worn, so that the serial number of the wafer is not clear, and subsequent use is influenced, which is a very troublesome problem in the industry. The purpose of numbering the silicon carbide epitaxial wafer is to distinguish and identify individual wafers. In view of the above, in order to solve the problems of abrasion and unclear identification of the existing serial numbers, the present application creatively proposes that, in the preparation process, the rotation modes or angles of each silicon carbide epitaxial wafer are different by rotating the angle of each exposure pattern, so as to realize mutual differentiation; in addition, different pattern rotation rules can be set by self, and the wafer numbering effect can be achieved.
It is understood that the key to the present application is the identification and numbering of the silicon carbide epitaxial wafer wafers achieved by this method of preparation, and the specific rules employed may be determined by the requirements of production and use and are not specifically limited herein.
The preparation method of the silicon carbide epitaxial wafer convenient to identify has the advantages that the process design can be compatible with the existing silicon semiconductor manufacturing production line, and the cost is greatly saved; and meanwhile, the flow and the quality of any product are not influenced. The problem of the silicon carbide epitaxial wafer in the production manufacturing process that the wafer number is difficult to identify is solved.
The present application is described in further detail below with reference to specific embodiments and the attached drawings. The following examples are intended to be illustrative of the present application only and should not be construed as limiting the present application.
Examples
In the manufacture of silicon carbide semiconductor products, photolithography processes must be used. Photolithography is currently commonly performed using a stepper. The principle of the stepper is to divide the whole silicon carbide epitaxial wafer into 30-60 exposures, as shown in fig. 1, fig. 1 shows the case of dividing the wafer into 34 exposures. The stepper uses automatic alignment, which is not only fast and accurate, but also can be calculated and compensated by a computer.
The preparation method of the silicon carbide epitaxial wafer convenient for identification is completed on a stepping photoetching machine, namely, in the photoetching exposure process of the photoetching machine on the silicon carbide epitaxial wafer, an exposure pattern at one time or a plurality of times is rotated by an angle larger than 0 degree and smaller than 360 degrees, and different silicon carbide epitaxial wafer wafers are distinguished and identified according to the position or the rotating angle of the rotated exposure pattern.
One implementation of this example is as follows:
1) placing the silicon carbide epitaxial wafer on a stepping photoetching machine; in the example, the whole silicon carbide epitaxial wafer is exposed for 34 times;
2) according to the presetting, when a certain time of exposure, the stepper rotates the pattern of the exposure of the preset time by 90 degrees;
3) and after the exposure of the rotating pattern is finished, restoring the stepping photoetching machine to a normal angle, and continuing to finish the exposure at the normal angle.
Specifically, in this example, the pattern of the first exposure of the first silicon carbide epitaxial wafer is rotated by 90 degrees, and the remaining exposures are not rotated, and the corresponding number is "01", as shown in fig. 2. The pattern of the second exposure of the second silicon carbide epitaxial wafer was rotated 90 degrees and the remaining exposures were not rotated, with the corresponding number being "02", as shown in fig. 3. The third exposure pattern of the third silicon carbide epitaxial wafer is rotated by 90 degrees, the rest exposures are not rotated, and the corresponding number is '03', as shown in fig. 4. The pattern of the fourth exposure of the fourth silicon carbide epitaxial wafer was rotated 90 degrees, and the remaining exposures were not rotated, and the corresponding number was "04", as shown in fig. 5. By analogy, the pattern of the twenty-fifth exposure of the twenty-fifth silicon carbide epitaxial wafer is rotated by 90 degrees, and the rest exposures are not rotated, and the corresponding number is '25', as shown in fig. 6. In this manner, this example can achieve the numbering of 34 epitaxial silicon carbide wafer wafers. In fig. 1 to 6, a solid-line circle indicates a silicon carbide epitaxial wafer, and a lower unfilled corner is used for orientation; dotted line squares indicate that the silicon carbide epitaxial wafer is divided into a plurality of portions and exposed respectively; in this example, 34 exposures are performed, each of which is numbered in sequence, as shown in fig. 1 to 6.
The method adopts a unique photoetching preparation method, and achieves the purpose of directly identifying the serial number of the silicon carbide epitaxial wafer by the front appearance difference of the silicon carbide epitaxial wafer without influencing the flow and quality of any product; the problem that the serial number of the existing wafer is easily identified is solved, and the production and use troubles caused by the serial number are avoided.
The above is only a specific identification rule of the present example, and based on the same inventive concept, other identification rules may also be adopted, for example, the whole silicon carbide epitaxial wafer is divided into n exposures; wherein, part of the exposed graph rotates a certain angle, and the other part of the exposed graph does not rotate; regarding the irrotational exposure pattern as 0 and the rotational exposure pattern as 1, and distinguishing or numbering each silicon carbide epitaxial wafer in a binary mode; for another example, the whole silicon carbide epitaxial wafer is divided into n exposures, and each nine exposures form a group when the complementary exposure operation is carried out; rotating the pattern of one exposure in the nine previous exposures by a certain angle during processing, so that the sub-digit number of the exposure is the number of the single digit of the silicon carbide epitaxial wafer; the number of the second digit of the rotating pattern in the subsequent nine exposures, namely the ten-digit number of the silicon carbide epitaxial wafer, is 0 without the rotating pattern; and by analogy, distinguishing or numbering each silicon carbide epitaxial wafer is realized.
The foregoing is a more detailed description of the present application in connection with specific embodiments thereof, and it is not intended that the present application be limited to the specific embodiments thereof. It will be apparent to those skilled in the art from this disclosure that many more simple derivations or substitutions can be made without departing from the spirit of the disclosure.
Claims (2)
1. A preparation method of a silicon carbide epitaxial wafer convenient to identify is characterized by comprising the following steps: the method comprises the steps that in the photoetching exposure process of a photoetching machine on the silicon carbide epitaxial wafer, one or more exposure patterns are rotated by an angle larger than 0 degree and smaller than 360 degrees, and different silicon carbide epitaxial wafer wafers are distinguished and identified according to the position or the rotation angle of the rotated exposure pattern;
the method for distinguishing and identifying different silicon carbide epitaxial wafer wafers according to the positions of the rotated exposure patterns or the rotation angles specifically comprises at least one of the following schemes,
1) dividing the whole silicon carbide epitaxial wafer into n times of exposure; rotating the first exposure graph of the first silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest exposures; rotating the graph of the second exposure of the second silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest of the exposures; rotating the graph of the third exposure of the third silicon carbide epitaxial wafer by an angle larger than 0 degree and smaller than 360 degrees, and not rotating the rest of exposures; by analogy, distinguishing or numbering each silicon carbide epitaxial wafer is realized;
2) dividing the whole silicon carbide epitaxial wafer into n times of exposure; wherein, the partially exposed graph rotates by an angle larger than 0 degree and smaller than 360 degrees, and the other partially exposed graph does not rotate; regarding the irrotational exposure pattern as 0 and the rotational exposure pattern as 1, and distinguishing or numbering each silicon carbide epitaxial wafer in a binary mode;
3) dividing the whole silicon carbide epitaxial wafer into n exposures, and forming a group of exposures every nine times when performing complementary exposure operation; rotating the pattern of one exposure in the first nine exposures by an angle larger than 0 degree and smaller than 360 degrees during processing, so that the sub-digit number of the exposure is the single digit number of the silicon carbide epitaxial wafer; the number of the second digit of the rotating pattern in the subsequent nine exposures, namely the ten-digit number of the silicon carbide epitaxial wafer, is 0 without the rotating pattern; and by analogy, distinguishing or numbering each silicon carbide epitaxial wafer is realized.
2. The method for producing a silicon carbide epitaxial wafer as claimed in claim 1, characterized in that: the method specifically comprises the following steps of,
1) placing the silicon carbide epitaxial wafer on a stepping photoetching machine;
2) according to the presetting, when a certain time of exposure, the stepper rotates the pattern of the exposure of the preset time by an angle which is more than 0 degree and less than 360 degrees;
3) and after the exposure of the rotating pattern is finished, restoring the stepping photoetching machine to a normal angle, and continuing to finish the exposure at the normal angle.
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