CN102446782A - Method for measuring critical dimension by using overlay (OVL) machine table - Google Patents
Method for measuring critical dimension by using overlay (OVL) machine table Download PDFInfo
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- CN102446782A CN102446782A CN2010105054813A CN201010505481A CN102446782A CN 102446782 A CN102446782 A CN 102446782A CN 2010105054813 A CN2010105054813 A CN 2010105054813A CN 201010505481 A CN201010505481 A CN 201010505481A CN 102446782 A CN102446782 A CN 102446782A
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Abstract
The invention discloses a method for measuring critical dimension by using an overlay (OVL) machine table, which comprises the steps of: 1) designing an OVL mark for measurement on a wafer; 2) after photoetching formation, using the OVL machine table to practically measure the OVL mark, establishing an OVL recipe and obtaining the critical dimension through the OVL dimension; and 3) calibrating the critical dimension obtained through the method by using a critical dimension - scanning electron microscope (CD-SEM), so as to obtain the bias between two systems. By using the relatively cheap OVL machine table to measure the critical dimension, the capacity of a factory is allocated and the economic production is more flexible.
Description
Technical field
(Critical Dimension, method for measurement CD) particularly relate to the method that a kind of OVL of utilization (alignment) board measures critical size to the present invention relates to a kind of critical size.
Background technology
Critical size (CD) is that (general using CD-SEM (critical size scanning electron microscopy) board measures integrated circuit for Integrated Circuit, IC) important parameters in the production process.CD-SEM utilizes the secondary imaging technology of electron beam to form images, and finally measures the critical size size.
OVL (alignment) utilizes optics to measure the deviation of the alignment of different levels.Usually, therefore the price of OVL board, if can carry out the measurement of critical size size with existing general OVL board, just has stronger economical adaptation property well below the price of CD-SEM board.
Summary of the invention
The technical problem that the present invention will solve provides the method that a kind of OVL of utilization board measures critical size.Through utilizing the OVL board to measure critical size, reach in the result who measures critical size with the CD-SEM board.
For solving the problems of the technologies described above, the method for utilizing the OVL board to measure critical size of the present invention comprises step:
(1) goes up design at chip (wafer) and can cross the OVL mark of measurement;
(2) after the photoetching moulding, utilize the actual measurement of OVL board OVL mark, set up OVL and measure formula (Recipe), through OVL size reaction critical size size.
This method also comprises step: (3) through the calibration of CD-SEM, thereby draw two deviations (bias) between the system at the critical size that obtains through said method.
The concrete method for designing of the OVL mark in the step (1) is following:
Central point with chip (wafer) is the center, design square PAD, and this square PAD length of side is m; With the Far Left of square PAD apart from the m place, design bar pattern C1, the vertical-direction length of C1 is n, cross-directional length is a; With the Far Left distance b place of C1, design bar pattern C2, the vertical-direction length of C2 is p, cross-directional length is a;
With the rightmost of square PAD apart from the m place, design bar pattern C3, the vertical-direction length of C3 is p, cross-directional length is 2a+b, wherein, is the center with the central point of C3, hollows out design bar pattern C4, the vertical-direction length of C4 is n, cross-directional length is b;
The central point of square PAD, bar pattern C1, C2, C3, C4 is all on same horizontal line; And utilize bar pattern C1, C2 to spend the center lines symmetry with 45 of square PAD; Designs C 1 ' and C2 '; Simultaneously, utilize bar pattern C3, C4 to spend the center lines symmetry with 45 of square PAD, designs C 3 ' and C4 '.
A+b is pitch (repetitive) size.Wherein, preferably, m=10 μ m, n=14 μ m, p=20 μ m.
OVL in the step (2) measures formula: Shift X (skew X)=(b-a)/2=(Pitch-2a)/2=Pitch/2-a; The Y direction also has equifinality [being Shift Y=(b-a)/2=(Pitch-2a)/2=Pitch/2-a], and transformation for mula obtains: a=Pitch/2-Shift X.Constant during the Pitch design, a is inversely proportional to Shift X, with the size reaction critical size size of a.
Deviation between two systems in the step (3) is to utilize CD-SEM to measure the size of actual a, in the hope of the deviation between a (ovl) and a (CD-SEM), and a (CD-SEM)=bias+a (OVL)=bias+Pitch/2-Shift X.
The present invention utilizes relatively inexpensive OVL board to measure critical size, thereby makes the production capacity allotment of factory, and economical production more is added with elastic force.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the OVL mark that the present invention designs;
Fig. 2 is for setting up the anterior layer graphic limit selection wire that OVL formula (Recipe) is shown.
Embodiment
The method of utilizing the OVL board to measure critical size of the present invention comprises step:
(1) design can be crossed the OVL mark of measurement on chip
Design OVL mark as shown in Figure 1, wherein, central figure is 10um*10um square PAD, and at PAD periphery design Line (live width) and Space (distance between centers of tracks), whole figure can be along 45 degree center line symmetries.
Concrete design procedure is following:
Central point with chip is the central point of the square PAD that designed, and this square PAD length of side is m; With the Far Left of square PAD apart from the m place, design bar pattern C1, the vertical-direction length of C1 is n, cross-directional length is a; With the Far Left distance b place of C1, design bar pattern C2, the vertical-direction length of C2 is p, cross-directional length is a;
With the rightmost of square PAD apart from the m place, design bar pattern C3, the vertical-direction length of C3 is p, cross-directional length is 2a+b, wherein, is the center with the central point of C3, hollows out design bar pattern C4, the vertical-direction length of C4 is n, cross-directional length is b;
The central point of square PAD, bar pattern C1, C2, C3, C4 is all on same horizontal line; And utilize bar pattern C1, C2 to spend the center lines symmetry with 45 of square PAD; Designs C 1 ' and C2 '; Simultaneously, utilize bar pattern C3, C4 to spend the center lines symmetry with 45 of square PAD, designs C 3 ' and C4 '.
A is expressed as Line (live width) size, and b is expressed as Space (distance between centers of tracks) size, and a+b is pitch (repetitive) size.
Wherein, m=10 μ m, n=14 μ m, p=20 μ m.
(2) after the photoetching moulding, utilize the actual measurement of OVL board OVL mark, set up OVL and measure formula, through OVL size reaction critical size size;
Concrete steps: for to work as layer pattern, is preceding layer pattern with the represented bar pattern of solid circles mark shown in Figure 2 with the square PAD of 10um*10um, sets up OVL and measures formula.Wherein note; With dotted line is the border selection wire (being preceding layer pattern with the bar pattern in the dotted line promptly) of preceding layer pattern; Because OVL can measure when the X of layer pattern and anterior layer centre of figure and the skew of Y direction, obtains: Shift X=(b-a)/2=(Pitch-2a)/2=Pitch/2-a.The Y direction also has equifinality [being Shift Y=(b-a)/2=(Pitch-2a)/2=Pitch/2-a].
Transformation for mula obtains: a=Pitch/2-Shift X.In Pitch when design, is constant, and therefore, a is inversely proportional to Shift X, and (usually, the OVL board is being to the right the positive direction of X-direction.)。
Size reaction critical size with a in this step is big or small.
(3) at the critical size that obtains through said method,, thereby draw two deviations (bias) between the system through the calibration of CD-SEM.
Because the consideration actual conditions need be calibrated different measurement systems.Through utilizing CD-SEM to measure the size of actual a.In the hope of the deviation between a (OVL) and a (CD-SEM), a (CD-SEM)=bias+a (OVL)=bias+Pitch/2-Shift X.
According to above-mentioned steps, the present invention utilizes existing general OVL board to carry out the measurement of critical size size with regard to realizing, and is very convenient, and practicality is stronger.
Claims (7)
1. method of utilizing the OVL board to measure critical size comprises step:
(1) design can be crossed the OVL mark of measurement on chip;
(2) after the photoetching moulding, utilize the actual measurement of OVL board OVL mark, set up OVL and measure formula, through OVL size reaction critical size size.
2. the method for utilizing the OVL board to measure critical size as claimed in claim 1 is characterized in that: also comprise step: (3) through the calibration of CD-SEM, thereby draw two deviations between the system at the critical size that obtains through said method.
3. the method for utilizing the OVL board to measure critical size as claimed in claim 1, it is characterized in that: the method for designing of the OVL mark in the said step (1) is following:
Central point with chip is the center, design square PAD, and this square PAD length of side is m; With the Far Left of square PAD apart from the m place, design bar pattern C1, the vertical-direction length of C1 is n, cross-directional length is a; With the Far Left distance b place of C1, design bar pattern C2, the vertical-direction length of C2 is p, cross-directional length is a;
With the rightmost of square PAD apart from the m place, design bar pattern C3, the vertical-direction length of C3 is p, cross-directional length is 2a+b, wherein, is the center with the central point of C3, hollows out design bar pattern C4, the vertical-direction length of C4 is n, cross-directional length is b;
The central point of square PAD, bar pattern C1, C2, C3, C4 is all on same horizontal line; And utilize bar pattern C1, C2 to spend the center lines symmetry with 45 of square PAD; Designs C 1 ' and C2 '; Simultaneously, utilize bar pattern C3, C4 to spend the center lines symmetry with 45 of square PAD, designs C 3 ' and C4 '.
4. the method for utilizing the OVL board to measure critical size as claimed in claim 3, it is characterized in that: said a+b is the repetition cell size, m=10 μ m, n=14 μ m, p=20 μ m.
5. the method for utilizing the OVL board to measure critical size as claimed in claim 1 is characterized in that: said OVL measures formula and is: Shift X=(b-a)/2=(Pitch-2a)/2=Pitch/2-a;
Shift?Y＝(b-a)/2＝(Pitch-2a)/2＝Pitch/2-a。
6. the method for utilizing the OVL board to measure critical size as claimed in claim 5 is characterized in that: it is a=Pitch/2-Shift X that said OVL measures formula, with the size reaction critical size size of a.
7. the method for utilizing the OVL board to measure critical size as claimed in claim 2; It is characterized in that: the deviation between two systems in the said step (3) is to utilize CD-SEM to measure the size of actual a; In the hope of the deviation between a (OVL) and a (CD-SEM), a (CD-SEM)=bias+a (OVL)=bias+Pitch/2-Shift X.
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| CN201010505481.3A CN102446782B (en) | 2010-10-13 | 2010-10-13 | Method for measuring critical dimension by using overlay (OVL) machine table |
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| CN201010505481.3A CN102446782B (en) | 2010-10-13 | 2010-10-13 | Method for measuring critical dimension by using overlay (OVL) machine table |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103832966A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Forming method and detection method of semiconductor device |
| CN105547655A (en) * | 2016-01-29 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Method for detecting optimal focal length of product through optical measurement |
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| US20060006328A1 (en) * | 2004-07-07 | 2006-01-12 | Cao Gary X | Characterizing resist line shrinkage due to CD-SEM inspection |
| CN101082783A (en) * | 2006-05-31 | 2007-12-05 | Asml荷兰有限公司 | Metrology tool, system comprising a lithographic apparatus and a metrology tool, and a method for determining a parameter of a substrate |
| CN101187780A (en) * | 2006-11-15 | 2008-05-28 | 中芯国际集成电路制造(上海)有限公司 | Method for determining lens thermal deformation correctional parameter |
| US20080248403A1 (en) * | 2007-04-04 | 2008-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for improving critical dimension uniformity |
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2010
- 2010-10-13 CN CN201010505481.3A patent/CN102446782B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060006328A1 (en) * | 2004-07-07 | 2006-01-12 | Cao Gary X | Characterizing resist line shrinkage due to CD-SEM inspection |
| CN101082783A (en) * | 2006-05-31 | 2007-12-05 | Asml荷兰有限公司 | Metrology tool, system comprising a lithographic apparatus and a metrology tool, and a method for determining a parameter of a substrate |
| CN101187780A (en) * | 2006-11-15 | 2008-05-28 | 中芯国际集成电路制造(上海)有限公司 | Method for determining lens thermal deformation correctional parameter |
| US20080248403A1 (en) * | 2007-04-04 | 2008-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for improving critical dimension uniformity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103832966A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Forming method and detection method of semiconductor device |
| CN103832966B (en) * | 2012-11-23 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Formation method and the detection method of semiconductor devices |
| CN105547655A (en) * | 2016-01-29 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Method for detecting optimal focal length of product through optical measurement |
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| CN102446782B (en) | 2014-02-26 |
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