CN101644898B - Method for measuring alignment precision among lithography machines with different magnifications - Google Patents
Method for measuring alignment precision among lithography machines with different magnifications Download PDFInfo
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- CN101644898B CN101644898B CN2008100436871A CN200810043687A CN101644898B CN 101644898 B CN101644898 B CN 101644898B CN 2008100436871 A CN2008100436871 A CN 2008100436871A CN 200810043687 A CN200810043687 A CN 200810043687A CN 101644898 B CN101644898 B CN 101644898B
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Abstract
The invention discloses a method for measuring alignment precision between lithography machines with different magnifications, which comprises the following steps: parallelly placing two rows of test patterns on a standard lithography mask plate, wherein the first row of test patterns are outer-frame test patterns corresponding to a reference lithography magnification, and the second row of test patterns are inter-frame test patterns corresponding to a contrast lithography magnification; (2) aligning the first row of test patterns with a lithography machine with the reference lithography magnification for a first lithography process, and forming outer-frame lithography patterns on a silicon wafer; (3) aligning the second row of test patterns with a lithography machine with the contrast lithography magnification for a second lithography process, and forming inter-frame lithography patterns; and (4) measuring the alignment difference between the outer-frame lithography patterns and the inter-frame lithography patterns, and obtaining an alignment precision difference value. The method does not require a standard wafer to measure the alignment precision deviation between the lithography machines with the different magnifications, and avoids the alignment deviation introduced after the repeated use of a plurality of standard photolithography masks.
Description
Technical field
The present invention relates to the measuring method of the alignment precision between a kind of different multiplying litho machine.
Background technology
At present, a lot of semiconductor manufacturing industry companies all have the litho machine (company that for example has has 2X/4X/5X simultaneously) of different multiplying simultaneously, and the alignment precision between the litho machine of different multiplying all is to verify by the alignment precision between measurement and the standard film.Through after using repeatedly, the precision of standard film also can decrease.In this case, also need the standard light of polylith different multiplying to cut blocks for printing simultaneously, the polylith standard light not only cost height of cutting blocks for printing, and the polylith standard light cuts blocks for printing after using repeatedly, the also alignment deviation that may introduce.
Summary of the invention
Technical matters to be solved by this invention provides the measuring method of the alignment precision between a kind of different multiplying litho machine, it can not need standard film, record the alignment precision deviation between the different multiplying litho machine, the alignment deviation of avoiding the polylith standard light to cut blocks for printing and after using repeatedly, introduce.
In order to solve above technical matters, the invention provides the measuring method of the alignment precision between a kind of different multiplying litho machine, may further comprise the steps:
(1) parallel placement two row's resolution charts on the standard photo mask board: first row's resolution chart is the housing resolution chart with reference to photoetching multiplying power correspondence; Second row's resolution chart is the inside casing resolution chart of contrast photoetching multiplying power correspondence;
(2) use with reference to the litho machine of photoetching multiplying power and aim at first row's resolution chart, carry out photoetching process first time, formation housing litho pattern on silicon chip;
(3) aim at second row's resolution chart with the litho machine of contrast photoetching multiplying power, carry out the photoetching process second time, form the inside casing litho pattern in housing litho pattern scope;
(4) alignment of measurement housing litho pattern and inside casing litho pattern is poor, obtains with reference to the alignment precision difference between photoetching multiplying power litho machine and the contrast photoetching multiplying power litho machine.
On standard light is cut blocks for printing, make one group of resolution chart because the present invention adopts, can not need standard film, record the alignment precision deviation between the different multiplying litho machine, the alignment deviation of avoiding the polylith standard light to cut blocks for printing and after using repeatedly, introduce.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is the synoptic diagram that standard light is carved the resolution chart on the mask plate in the one embodiment of the invention;
Fig. 2 is that the present invention adopts the figure after the photo mask board of Fig. 1 carries out photoetching.
Embodiment
As shown in Figure 1, the measuring method of the alignment precision between the different multiplying litho machine of the present invention parallel placement two row's resolution charts on the standard photo mask board at first: first row's resolution chart is the housing resolution chart with reference to photoetching multiplying power correspondence; Second row's resolution chart is the inside casing resolution chart of contrast photoetching multiplying power correspondence, above-mentioned two rows are set during resolution charts on photo mask board, the resolution chart zone is made up of transmission region and light tight zone, but not 1 of graphics field promptly can be a transmission region, also can be light tight zone.
Two row's resolution charts of the present invention can comprise plural resolution chart (as being respectively 3 among Fig. 1) respectively, first row is the housing resolution chart, all adopt 5X photoetching multiplying power for reference to the photoetching multiplying power resolution chart size to be set, the outer length of side of housing is 150nm among the figure, and the interior length of side is 100nm.This dimension of picture can be set as required, and it satisfies after the photoetching figure reduction magnification for reference to the photoetching multiplying power.Second row's resolution chart is the inside casing resolution chart, to be provided with according to contrast multiplying power to be measured, the length of side of three inside casing resolution charts is respectively 50nm (corresponding 5X photoetching multiplying power), 40nm (corresponding 4X photoetching multiplying power) and 20nm (corresponding 2X photoetching multiplying power) among the figure, above-mentioned size can be provided with as required, but need be proportional to the photoetching multiplying power of this inside casing resolution chart correspondence.
Set after the resolution chart of standard photo mask board, use with reference to the litho machine of photoetching multiplying power and aim at first row's resolution chart, carry out the photoetching process first time.For example to contrast the alignment precision difference of 5X photoetching multiplying power and 2X photoetching multiplying power, then aim at the housing resolution chart of the corresponding inside casing resolution chart of second row 2X photoetching multiplying power top, contrast the alignment precision difference of 5X photoetching multiplying power and 5X photoetching multiplying power, then aim at the housing resolution chart of the corresponding inside casing resolution chart of second row 5X photoetching multiplying power top.On silicon chip, form the housing litho pattern after the photoetching.
Aim at second row's resolution chart with the litho machine of contrast photoetching multiplying power then, be about to the position that photo mask board moves to the inside casing resolution chart of second row's contrast photoetching multiplying power correspondence downwards, carry out the photoetching process second time in housing litho pattern scope, form the inside casing litho pattern.
Adopt different contrast photoetching multiplying powers carry out after the photoetching photoetching alignment figure as shown in Figure 2, further measure the alignment poor (size A, B, C, D among the figure) of housing litho pattern and inside casing litho pattern, promptly obtain with reference to the alignment precision difference between photoetching multiplying power (5X) litho machine and contrast photoetching multiplying power (the being all 5X) litho machine, can obtain alignment precision difference between other different multiplying litho machines with quadrat method.
Measuring method of the present invention adopts makes one group of resolution chart on standard light is cut blocks for printing, can not need standard film, records the alignment precision deviation between the different multiplying litho machine, the alignment deviation of avoiding the polylith standard light to cut blocks for printing and introduce after using repeatedly.
Claims (3)
1. the measuring method of the alignment precision between the different multiplying litho machine; It is characterized in that, comprise the steps:
(1) parallel placement two row's resolution charts on the standard photo mask board: first row's resolution chart is the housing resolution chart with reference to photoetching multiplying power correspondence; Second row's resolution chart is the inside casing resolution chart of contrast photoetching multiplying power correspondence;
(2) use with reference to the litho machine of photoetching multiplying power and aim at first row's resolution chart, carry out photoetching process first time, formation housing litho pattern on silicon chip;
(3) aim at second row's resolution chart with the litho machine of contrast photoetching multiplying power, carry out the photoetching process second time, form the inside casing litho pattern in described housing litho pattern scope;
(4) alignment of described housing litho pattern of measurement and inside casing litho pattern is poor, obtains described with reference to the alignment precision difference between photoetching multiplying power litho machine and the described contrast photoetching multiplying power litho machine.
2. the measuring method of the alignment precision between the different multiplying litho machine as claimed in claim 1, it is characterized in that, described first row's resolution chart and second row's resolution chart comprise plural resolution chart respectively, described first row's resolution chart is same housing resolution chart with reference to photoetching multiplying power correspondence, described second row's resolution chart is the inside casing resolution chart of a plurality of contrast photoetching multiplying power correspondences, and the size of described each the inside casing resolution chart photoetching multiplying power corresponding with it is directly proportional.
3. the measuring method of the alignment precision between the different multiplying litho machine as claimed in claim 2, it is characterized in that, the described aligning first row's resolution chart of step (2) is meant, aim at the housing resolution chart of the inside casing resolution chart top of contrast photoetching multiplying power correspondence, the described aligning second row's resolution chart of step (3) is meant, behind the completing steps (2), described photo mask board is moved to the position of the inside casing resolution chart of second row's contrast photoetching multiplying power correspondence downwards.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100436871A CN101644898B (en) | 2008-08-06 | 2008-08-06 | Method for measuring alignment precision among lithography machines with different magnifications |
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| CN2008100436871A CN101644898B (en) | 2008-08-06 | 2008-08-06 | Method for measuring alignment precision among lithography machines with different magnifications |
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| CN101644898A CN101644898A (en) | 2010-02-10 |
| CN101644898B true CN101644898B (en) | 2011-05-04 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102540735A (en) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | Check method of photomask diagram position deviation |
| CN102109772B (en) * | 2011-01-28 | 2014-10-22 | 上海华虹宏力半导体制造有限公司 | Method for automatically building interlayer error measurement programs in batch in photoetching process |
| CN102445858B (en) * | 2011-11-28 | 2014-12-10 | 上海华力微电子有限公司 | Technical matching method for photo-etching machines |
| CN102540758B (en) * | 2011-11-29 | 2014-06-04 | 上海华力微电子有限公司 | Method for matching different photolithography coating devices in same photolithography process |
| CN102445860B (en) * | 2011-11-29 | 2013-09-11 | 上海华力微电子有限公司 | Method for matching different photoetching machines in same photoetching technology |
| CN103454852B (en) * | 2012-06-05 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | A kind of measuring method of mask plate and alignment precision |
| CN104347443B (en) * | 2013-08-07 | 2017-02-08 | 无锡华润上华科技有限公司 | Testing method for sudden change in horizontal direction of wafer alignment |
| CN104810302B (en) * | 2014-01-23 | 2018-12-25 | 北大方正集团有限公司 | A kind of application method monitoring wafer |
| CN104166319B (en) * | 2014-09-12 | 2016-06-22 | 上海先进半导体制造股份有限公司 | The method of litho machine nest plate alignment |
| CN105280515A (en) * | 2015-10-22 | 2016-01-27 | 上海华虹宏力半导体制造有限公司 | Method for testing charge accumulation in manufacturing process of chip |
| CN107731706B (en) * | 2017-10-20 | 2020-02-21 | 上海华力微电子有限公司 | Alignment precision spot inspection method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169591A (en) * | 2006-10-23 | 2008-04-30 | 上海华虹Nec电子有限公司 | Lens imaging system for overlay accuracy and its feeding and calibration method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101169591A (en) * | 2006-10-23 | 2008-04-30 | 上海华虹Nec电子有限公司 | Lens imaging system for overlay accuracy and its feeding and calibration method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |