CN201740972U - Measurement structure for measuring registering precision - Google Patents
Measurement structure for measuring registering precision Download PDFInfo
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- CN201740972U CN201740972U CN2010202465617U CN201020246561U CN201740972U CN 201740972 U CN201740972 U CN 201740972U CN 2010202465617 U CN2010202465617 U CN 2010202465617U CN 201020246561 U CN201020246561 U CN 201020246561U CN 201740972 U CN201740972 U CN 201740972U
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Abstract
The utility model provides a measurement structure for measuring registering precision. The measurement structure comprises two parts, namely a previous layer aligned structure and a current layer alignment structure, wherein the measurement structure is a central axisymmetric pattern; the previous layer aligned structure offsets relative to the current layer alignment structure in the X axis direction and the Y axis direction; after offset is introduced into the previous layer aligned structure in the X axis direction and the Y axis direction relative to the current layer alignment structure, errors caused by process, measurement or the like can be measured and corrected through comparison between a measurement result of technical manufacturing and preset offset, so that the testing accuracy and the credibility are improved, the adverse impact of the process is reduced, the scrapping of silicon slices is prevented, the loss is reduced, the cyclic flow is shortened, and the structure has the advantages of simple pattern, convenient manufacturing and reusability and is favorable for mass production. The measurement structure can be applied to photo-etching machine alignment marks, registering marks, cursor marks, visual measurement marks, line width measurement marks and the like.
Description
Technical field
The utility model relates to the ic manufacturing technology field, relates in particular to a kind of measurement structure that is used to measure alignment precision.
Background technology
Photoetching technique is followed the continuous progress of integrated circuit fabrication process, constantly dwindling of live width, it is more and more littler that the area of semiconductor devices is just becoming, and semi-conductive layout develops into the integrated circuit of integrating high-density multifunction from common simple function discrete device; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (VLSI (very large scale integrated circuit)), until the ULSI of today (ULSI), the area of device further dwindles, function is powerful more comprehensively.Consider the complicacy of technique research and development, the restriction of chronicity and high cost or the like unfavorable factor, how on the basis of prior art level, further to improve the integration density of device, dwindle area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thereby the raising overall interests will more and more be subjected to the chip designer, the attention of manufacturer.Wherein photoetching process is just being undertaken crucial effect, and resolution and alignment precision promptly are the most important things wherein for photoetching technique.
Resolution: the photoetching technique of using in the semiconductor production is mainly based on the diffraction principle of optics.The diffraction of optics is light by the opaque body edge, passes slit or produce deviation and some bright band parallel to each other and blanking bars occur when drawing the surface reflection that parallel lines is arranged.When light passes through mask, owing to be subjected to the influence of mask plate structure, make light generation deviation, thereby produce the different diffraction progression of quantity, basic calculating worker formula according to the size of mask plate structure:
P*Sin α=n* λ (formula 1)
P is the summation of the width of the transparent region of structure and opaque section; α is an angle of diffraction; λ is the wavelength that litho machine uses; N promptly is a diffraction progression.
According to numerical aperture, the notion of resolution and computing formula:
NA=N*Sin α (formula 2)
R=K1* λ/NA (formula 3)
NA (Numerical Aperture) is the important sign of photoetching machine lens ability, the high more resolution R that it brings is high more for numerical value, K1 is the coefficient factor, ability with technology, the wavelength of equipment, the basic parameter of numerical aperture etc. is relevant, and N is the refractive index of medium between optical lens and the silicon chip, and the numerical aperture of the big more gained of refractive index is also high more.Usually the medium of dry lithography technology is an air, thus the size of numerical aperture only to catch angle of diffraction relevant with maximum.Catch angle of diffraction when numerical aperture can obtain maximum by formula 2 when certain definite value, bring formula 1 thus into and obtain the diffraction progression that to be collected by camera lens.The diffraction progression of collecting is many more, and the degree true to nature of structure is high more, and the spatial image contrast that obtains thus also can improve greatly.Spatial image is absorbed by photochromics subsequently, by developing to picture.Along with the introducing of the technology of immersion exposure, numerical aperture has broken through traditional notion, and this has promoted the performance of resolution greatly.
Alignment precision: alignment precision is as the term suggests promptly be the accuracy that superposes each other, overlaps that is used for characterizing structure.Semiconductor technology becomes increasingly complex, and this causes only relying on the stack of several layer process can not satisfy multi-functional, highdensity demand, and the mutual combination key of multilayer technology just is whether can overlap accurately.Generally, alignment precision is about 1/3 of a minimum feature, and along with live width is more and more littler, device density improves constantly, also all the more the strictness of the specification of alignment precision.In addition, complicated technology has also been introduced the unfavorable factor as stress deformation, Thickness Variation, pattern drift etc., and the measuring error of lithographic equipment, testing apparatus, and self error also will cause more uncertain factor.Therefore after obtaining measurement data, whether measurement result is credible also becomes the problem that must face.The method that industry usually adopts be introduce after the etching measure again to determine the optical measurement after the photoetching whether truly feasible, but this kind method very easily causes silicon chip to be scrapped, loss is big and cyclic flow is longer, is unfavorable for big production.
The utility model content
The technical problems to be solved in the utility model: provide a kind of measurement structure that is used to measure alignment precision, cause the silicon chip loss big can overcome in the prior art measuring method, cyclic flow is long, be unfavorable for big defective of producing.
For solving above technical matters, the utility model provides a kind of measurement structure that is used to measure alignment precision, be the central shaft symmetric figure, comprise that anterior layer is aligned structure and when anterior layer align structures two parts, described anterior layer is aligned the described relatively anterior layer align structures of working as of structure has side-play amount on X-direction and Y direction.Further, at described measurement structure, described anterior layer is aligned structure and comprises at least one rectangular graph bar.
Further, at described measurement structure, the described anterior layer align structures of working as is made of photoresist, and the described anterior layer align structures of working as comprises at least one rectangular graph bar.
Further, described measurement structure is a square, is divided into transverse area and longitudinal region.
Further, described measurement structure is divided into four zones, and wherein at least one zone is a transverse area, and at least one is a longitudinal region.
Further, at described measurement structure, in the described transverse area, described anterior layer is aligned structure with described all parallel with X-axis when the anterior layer align structures, and described anterior layer is aligned structure has described Y direction side-play amount with respect to the described anterior layer align structures of working as.
Further, described Y direction side-play amount is-10000 microns to+10000 microns.
Further, at described measurement structure, in the described longitudinal region, described anterior layer is aligned structure with described all parallel with Y-axis when the anterior layer align structures, and described anterior layer is aligned structure has described X-direction side-play amount with respect to the described anterior layer align structures of working as.
Further, described X-direction side-play amount is-10000 microns to+10000 microns.
In sum, be used to described in the utility model to measure that anterior layer is aligned figure with respect to having introduced side-play amount respectively when the anterior layer alignment patterns on X-axis, Y direction described in the measurement structure of alignment precision, by the measurement result after the technology making and the comparison of default bias amount, can measure and aspects generation errors such as correction process or measurement, improve measuring accuracy and confidence level, reduced the negative effect of technology.
Described measurement structure has been avoided scrapping of silicon chip, reduces loss, and it is longer to have shortened cyclic flow, and figure is simple, is convenient to make, and is reusable, helps a large amount of productions.The measurement structure that is used to measure alignment precision in the utility model can be applicable to litho machine alignment mark, register mark, vernier mark, visual marking, wire width measuring mark etc.
Description of drawings
Fig. 1 a, Fig. 1 b and Fig. 1 c are three embodiment of layout type that are used to measure the measurement structure of alignment precision in the utility model.
Fig. 2 a～Fig. 2 d is that the anterior layer of measurement structure described in the utility model is aligned structure with respect to the combination synoptic diagram of introducing side-play amount when the anterior layer align structures respectively along X-axis, Y direction.
Embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of the common and personnel that say in this area also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes synoptic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, synoptic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Central idea of the present utility model is: the measurement structure that will be used to measure alignment precision is divided into that anterior layer is aligned figure and when anterior layer alignment patterns two parts, when technology is made, described anterior layer is aligned figure and on X-axis, Y direction, introduces side-play amount respectively with respect to the described anterior layer alignment patterns of working as, compare by measurement result and default bias amount after technology is made, can measure and aspects generation errors such as correction process or measurement, and then improve measuring accuracy and confidence level.
In conjunction with above-mentioned central idea, the utility model proposes a kind of measurement structure that is used to measure alignment precision, be the central shaft symmetric figure, comprise that anterior layer is aligned structure 1 and works as anterior layer align structures 2 two parts composition, the length of side of described measurement structure is 0.01 micron to 1000 microns, and described anterior layer is aligned the described relatively anterior layer align structures 2 of working as of structure 1 has side-play amount on X-direction and Y direction.
Further, at described measurement structure, described anterior layer is aligned structure 1 and is made of the material of current photoetching process layer, in the utility model, the depth range that described anterior layer is aligned structure is 0.1 micron to 100 microns, and described anterior layer is aligned structure 1 and comprises at least one rectangular graph bar.Satisfying under the situation of structural design, the length range of described every rectangular graph bar is 0.01 micron to 10000 microns, and width range is 0.01 micron to 10000 microns.When if described anterior layer is aligned structure 1 and comprises one or more rectangular graph bar, distance between described every rectangular graph bar is 0.01 micron to 10000 microns, above-mentioned numerical range is a numerical range commonly used in the technology, in addition, other satisfy the size design that technology makes under the situation of ability and measurement range and all are included in the thought range of the present utility model.
Further, at described measurement structure, describedly constitute by photoresist when anterior layer align structures 2, in the utility model, described depth range when the anterior layer align structures is 0.1 micron to 100 microns, the described anterior layer align structures 2 of working as comprises at least one rectangular graph bar, and the length range of described every rectangular graph bar is 0.01 micron to 10000 microns, and width range is 0.01 micron to 10000 microns.Satisfying under the situation of structural design, the length range of described every rectangular graph bar is 0.01 micron to 10000 microns, and width range is 0.01 micron to 10000 microns.If when described anterior layer was aligned structure 1 and comprises one or more rectangular graph bar, the distance between described every rectangular graph bar was 0.01 micron to 10000 microns.Above-mentioned numerical range is a numerical range commonly used in the technology, and in addition, other satisfy the size design that technology makes under the situation of ability and measurement range and all are included in the thought range of the present utility model.
Further, Fig. 1 a, Fig. 1 b and Fig. 1 c are three embodiment of layout type that are used to measure the measurement structure of alignment precision in the utility model, with reference to figure 1a～Fig. 1 c, in the utility model, described measurement structure adopts square, and square is divided into transverse area 10 and longitudinal region 20, wherein preferably, be that described measurement structure is divided into four zones, at least one zone is a transverse area 10, and at least one zone is a longitudinal region 20.Shown in Fig. 1 a, described transverse area 10 and described longitudinal region 20 are in adjacent areas; Shown in Fig. 1 b, described transverse area 10 and the zone of described longitudinal region 20 at relative angle; Shown in Fig. 1 c, two transverse areas 10 are positioned at the zone at diagonal angle, and two longitudinal regions 20 are positioned at the zone at two diagonal angles.In addition, other dividing mode of transverse area and longitudinal region and position are included in the thought range of the present utility model.
Further, be example with the embodiment of the layout type of measurement structure described in Fig. 1 c, the anterior layer of designing described measurement structure is aligned structure with respect to the combination of introducing side-play amount when the anterior layer align structures respectively along X-direction, Y direction.With reference to figure 1c, at described measurement structure, it is all parallel with X-axis with the described anterior layer align structures 2 of working as that described anterior layer in the described transverse area 10 is aligned structure 1, described have Y direction side-play amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer, and the scope of described Y direction side-play amount y is-10000 microns to+10000 microns.
Further, at described measurement structure, the described anterior layer in the described longitudinal region 20 is aligned structure 1 with described all parallel with Y-axis when anterior layer align structures 2, and described have X-direction side-play amount x when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer.Described X-direction side-play amount x is-10000 microns to+10000 microns.In addition, above-mentioned numerical range is a numerical range commonly used in the technology, in addition, all be included in the thought range of the present utility model for the side-play amount x of described X-direction and side-play amount y other size design under the situation that satisfies technology making ability and measurement range of described Y direction.
With reference to figure 2a～Fig. 2 d, shown in Fig. 2 a, in transverse area 10, described have forward migration amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along Y-axis; In longitudinal region 20, described have forward migration amount x when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along X-axis.Equally, shown in Fig. 2 b, in transverse area 10, described have negative offset amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along Y-axis; In longitudinal region 20, described have forward migration amount x when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along X-axis.Shown in Fig. 2 c, in transverse area 10, described have forward migration amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along Y-axis; In longitudinal region 20, described have negative offset amount x when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along X-axis.Shown in Fig. 2 d, in transverse area 10, described have negative offset amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along Y-axis; In longitudinal region 20, described have negative offset amount x when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along X-axis.
The described using method that is used to measure the measurement structure of alignment precision is: be aligned structure 1 and described when the side-play amount between the anterior layer align structures 2 at default described anterior layer on the process equipment, for example being provided with at transverse area describedly has forward migration amount y when anterior layer align structures 2 is aligned structure 1 with respect to described anterior layer along Y-axis
1, y
1Be 10 microns, be provided with at another transverse area and describedly be aligned structure 1 with respect to described anterior layer and negative offset amount y arranged when anterior layer align structures 2 along Y-axis
2, y
2Be-10 microns, then be aligned structure 1 and described when anterior layer align structures 2 by forming described anterior layer behind process equipment etching, the lithography step, use survey instrument to measure the described anterior layer align structures 2 of working as and be aligned structure 1 real offset with respect to described anterior layer, for example, the forward migration amount y of actual measurement
1Be 8 microns, negative offset amount y
2Be 12 microns, can judge that then there is 2 microns measuring error in survey instrument, then further detects, revises survey instrument; If the forward migration amount y of actual measurement
1Be 12 microns, negative offset amount y
2Be 10 microns, can judge that then there is the deviation of 2 microns of forwards in process equipment, then further detects, revises process equipment.Describedly be aligned structure 1 along X-axis certain deviation amount with respect to described anterior layer when anterior layer align structures 2 in that longitudinal region is default equally, measure after technology is made and to judge process equipment or survey instrument deviation in X-direction.
In sum, the measurement structure that is used to measure alignment precision in the utility model comprises that described anterior layer is aligned figure 1 and when anterior layer alignment patterns 2 two parts, described anterior layer is aligned figure 1 with respect to having introduced side-play amount respectively when anterior layer alignment patterns 2 on X-axis, Y direction, compare by measurement result and default bias amount after technology is made, can measure and aspects generation errors such as correction process or measurement, and then improve measuring accuracy and confidence level, reduced the negative effect of technology.
Described measurement structure has been avoided scrapping of silicon chip, reduces loss, and it is longer to have shortened cyclic flow, and figure is simple, is convenient to make, and is reusable, helps a large amount of productions.
The measurement structure that is used to measure alignment precision in the utility model can be applicable to litho machine alignment mark, register mark, vernier mark, visual marking, wire width measuring mark etc.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (9)
1. measurement structure that is used to measure alignment precision, be the central shaft symmetric figure, it is characterized in that, comprise that anterior layer is aligned structure and when anterior layer align structures two parts, described anterior layer is aligned the described relatively anterior layer align structures of working as of structure has side-play amount on X-direction and Y direction.
2. measurement structure as claimed in claim 1 is characterized in that, described anterior layer is aligned structure and comprises at least one rectangular graph bar.
3. measurement structure as claimed in claim 1 is characterized in that, the described anterior layer align structures of working as is made of photoresist, and the described anterior layer align structures of working as comprises at least one rectangular graph bar.
4. measurement structure according to claim 1 is characterized in that, described measurement structure is a square, is divided into transverse area and longitudinal region.
5. measurement structure as claimed in claim 4 is characterized in that, described measurement structure is divided into four zones, and wherein at least one zone is a transverse area, and at least one is a longitudinal region.
6. as claim 4 or 5 described measurement structure, it is characterized in that, in described transverse area, described anterior layer is aligned structure with described all parallel with X-axis when the anterior layer align structures, and described anterior layer is aligned structure has described Y direction side-play amount with respect to the described anterior layer align structures of working as.
7. measurement structure as claimed in claim 6 is characterized in that, described Y direction side-play amount is-10000 microns to+10000 microns.
8. as claim 4 or 5 described measurement structure, it is characterized in that, in described longitudinal region, described anterior layer is aligned structure with described all parallel with Y-axis when the anterior layer align structures, and described anterior layer is aligned structure has described X-direction side-play amount with respect to the described anterior layer align structures of working as.
9. measurement structure as claimed in claim 8 is characterized in that, described X-direction side-play amount is-10000 microns to+10000 microns.
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| CN2010202465617U CN201740972U (en) | 2010-06-30 | 2010-06-30 | Measurement structure for measuring registering precision |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010202465617U CN201740972U (en) | 2010-06-30 | 2010-06-30 | Measurement structure for measuring registering precision |
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| CN201740972U true CN201740972U (en) | 2011-02-09 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103529659A (en) * | 2013-10-29 | 2014-01-22 | 天津芯硕精密机械有限公司 | Alignment precision detection method and system |
| CN105702662A (en) * | 2014-11-27 | 2016-06-22 | 中芯国际集成电路制造(上海)有限公司 | Registration mark and formation method thereof |
| CN106783672A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of standard film for verifying Overlay board precision, preparation method and verification method |
| CN106981435A (en) * | 2016-01-15 | 2017-07-25 | 无锡华润上华半导体有限公司 | A kind of photoetching checks graphic structure |
| CN109541884A (en) * | 2018-12-29 | 2019-03-29 | 上海华力微电子有限公司 | Splice the test light shield of product and combinations thereof method |
| CN115390374A (en) * | 2022-11-01 | 2022-11-25 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
-
2010
- 2010-06-30 CN CN2010202465617U patent/CN201740972U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103529659A (en) * | 2013-10-29 | 2014-01-22 | 天津芯硕精密机械有限公司 | Alignment precision detection method and system |
| CN105702662A (en) * | 2014-11-27 | 2016-06-22 | 中芯国际集成电路制造(上海)有限公司 | Registration mark and formation method thereof |
| CN105702662B (en) * | 2014-11-27 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | Register mark and forming method thereof |
| CN106981435A (en) * | 2016-01-15 | 2017-07-25 | 无锡华润上华半导体有限公司 | A kind of photoetching checks graphic structure |
| CN106981435B (en) * | 2016-01-15 | 2019-12-03 | 无锡华润上华科技有限公司 | A kind of photoetching inspection graphic structure |
| CN106783672A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of standard film for verifying Overlay board precision, preparation method and verification method |
| CN109541884A (en) * | 2018-12-29 | 2019-03-29 | 上海华力微电子有限公司 | Splice the test light shield of product and combinations thereof method |
| CN109541884B (en) * | 2018-12-29 | 2022-06-14 | 上海华力微电子有限公司 | Test photomask of spliced product and combination method thereof |
| CN115390374A (en) * | 2022-11-01 | 2022-11-25 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
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Granted publication date: 20110209 |
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