CN102005369B - A kind of lithography alignment method for epitaxy technique - Google Patents
A kind of lithography alignment method for epitaxy technique Download PDFInfo
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- CN102005369B CN102005369B CN201010278703.2A CN201010278703A CN102005369B CN 102005369 B CN102005369 B CN 102005369B CN 201010278703 A CN201010278703 A CN 201010278703A CN 102005369 B CN102005369 B CN 102005369B
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Abstract
The invention provides a kind of lithography alignment method for epitaxy technique, said method comprising the steps of: step 1: preset extension total thickness value and determine single epitaxial deposition thickness value; Step 2: by the extension deviant of decoration method determination single epitaxial deposition thickness value; Step 3: according to the described extension deviant obtained, revise the position of alignment mark to be etched; Step 4: carry out epitaxial diposition, photoetching and etch described alignment mark; Step 5: judge whether the thickness of described extension reaches the extension total thickness value preset, and if so, then technique terminates, and if not, then turns to step 4.Method provided by the invention avoids and causes pattern distortion by epitaxial growth and the problem of the alignment precision deviation produced, thus improves alignment precision.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of lithography alignment method for epitaxy technique.
Background technology
Photoetching technique is with the continuous progress of integrated circuit fabrication process, constantly reducing of live width, the area of semiconductor device is just becoming more and more less, and the layout of semiconductor, from common simple function discrete device, develops into the integrated circuit integrating high-density multifunction; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (very lagre scale integrated circuit (VLSIC)), until the ULSI of today (ultra large scale integrated circuit), the area of device reduces further, and function is more comprehensively powerful.Consider the complexity of technique research and development, the restriction of chronicity and high cost etc. unfavorable factor, on the basis of prior art level, how to improve the integration density of device further, reduce the area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thus raising overall interests, more and more will be subject to chip designer, the attention of manufacturer.Wherein photoetching process is just responsible for crucial effect, and for photoetching technique, namely resolution and alignment precision are the most important things wherein.
Resolution: the photoetching technique used in semiconductor production is mainly based on the diffraction principle of optics.The diffraction of optics is that light is by opaque body edge, produce deviation through slit or from when drawing and have the surface reflection of parallel lines and occur some bright bands parallel to each other and blanking bar.When light is by mask plate, owing to being subject to the impact of mask plate patterns, make light generation deviation, produce the different diffraction progression of quantity, basic calculating work formula according to the size of mask plate patterns:
P*Sin α=n* λ (formula 1)
P is the summation of the transparent region of figure and the width of opaque section; α is angle of diffraction; λ is the wavelength that mask aligner uses; Namely n is diffraction progression.
According to numerical aperture, the concept of resolution and computing formula:
NA=N*Sin α (formula 2)
R=K1* λ/NA (formula 3)
NA (Numerical Aperture) is the important sign of photoetching machine lens ability, the higher resolution R that it brings is higher for numerical value, K1 is coefficient factor, with the ability of technique, the wavelength of equipment, the basic parameter of numerical aperture etc. is correlated with, and N is the refractive index of medium between optical lens and silicon chip, and the numerical aperture of the larger gained of refractive index is also higher.The medium of usual dry lithography technology is air, and therefore the size of numerical aperture is only relevant to the maximum angle of diffraction of catching.When numerical aperture can obtain the maximum angle of diffraction of catching for during certain definite value by formula 2, bringing that formula 1 obtains thus into can by the diffraction progression of shots.The diffraction progression collected is more, and the degree true to nature of figure is higher, and the spatial image contrast obtained thus also can improve greatly.Spatial image is absorbed by light-sensitive material subsequently, by developing to picture.Along with the introducing of the technology of immersion exposure, numerical aperture has breached traditional concept, and this improves the performance of resolution greatly.
Alignment precision: namely alignment precision as the term suggests be used to the accuracy superposing each other, overlap characterizing figure.Semiconductor technology becomes increasingly complex, and this causes only relying on the superposition of a few layer process can not meet multi-functional, highdensity demand, and the mutual combination key of multilayer technology is just whether can overlap accurately.Under normal circumstances, alignment precision is about 1/3 of minimum feature, and along with live width is more and more less, device density improves constantly, the specification of alignment precision also all the more strict.In addition, complicated technique also introduces the unfavorable factor as stress deformation, Thickness Variation, pattern drift etc., and the measure error of lithographic equipment, testing equipment, self error also will cause more uncertain factor.Generally, aim at and be divided into multiple different index amounts such as pattern drifting, figure rotation, the change of pattern visual evoked potentials multiplying power, imaging distortion, the skew of rectangular figures position, the requirement of manufacturing standard is constantly tightened up, will be stricter to the requirement of alignment precision.
Along with the progress of semiconductor technology, obtain good interface and manufacture semiconductor device and can not meet require that of performance by cleaning, the growth of the single crystalline semiconductor film of epitaxial growth-on the crystal bottom be applicable to, just arises at the historic moment.This technology can provide good defect concentration to control, rational doping concentration distribution, thus can improve device performance greatly.But during epitaxial growth in semiconductor fabrication, due to the inhomogeneities of growth course, pattern distortion is more common a kind of problem.Pattern distortion can affect follow-up lithography alignment accuracy, thus the alignment precision of restriction photoetching, limit exploitation and the manufacture of small size epitaxial device.Please refer to Fig. 1 to Fig. 4, Fig. 1 to Fig. 4 is the photoetching alignment mark structural representation for epitaxy technique in prior art, and Fig. 1 etches the first alignment mark 11 on substrate 1; Self-assembling formation after Fig. 2 to be the second alignment mark 12 grown on the basis of Fig. 1 in the first epitaxial loayer 2, Fig. 2 be growing epitaxial; Fig. 3 is on the basis of Fig. 2, continue to etch the 3rd alignment mark 13, during due to epitaxial growth in semiconductor fabrication, due to the inhomogeneities of growth course, pattern distortion is more common a kind of problem, and therefore the position of the 3rd alignment mark 13 there occurs some skew compared with the position of the first alignment mark 11; Fig. 4 be Fig. 3 basis on growth second epitaxial loayer 3, etching alignment mark, there is again some skew, growth regulation three epitaxial loayer 4 on the second epitaxial loayer 3 again, and etch alignment mark, continue some skew occurs, until the gross thickness of epitaxial loayer meets the requirements, and the position of final alignment mark is relative to the first alignment mark 11, wants the position of the alignment mark realized in established technology, then there occurs larger side-play amount.The pattern distortion amount produced when how accurately to measure epitaxial growth, for raising photoetching alignment precision, has very important meaning.
Summary of the invention
The problem that the present invention solves is the problem of the alignment precision deviation causing pattern distortion by epitaxial growth and produce.
In order to achieve the above object, the invention provides a kind of lithography alignment method for epitaxy technique, said method comprising the steps of: step 1: preset extension total thickness value and determine single epitaxial deposition thickness value; Step 2: by the extension deviant of decoration method determination single epitaxial deposition thickness value; Step 3: according to the described extension deviant obtained, revise the position of alignment mark to be etched; Step 4: carry out epitaxial diposition, photoetching and etch described alignment mark; Step 5: judge whether the thickness of described extension reaches the extension total thickness value preset, and if so, then technique terminates, and if not, then turns to step 4.
Optionally, determine that the method for single epitaxial deposition thickness value comprises: the epitaxial loayer of deposit different-thickness; Use the multiple epitaxial loayers of mask aligner to deposit to carry out signal measurement respectively, obtain the alignment error under different epitaxial thickness state; Select the epitaxial thickness corresponding to minimum value of alignment error as single epitaxial deposition thickness value.
Optionally, described alignment mark is mask aligner alignment mark, register mark, vernier mark, visual marking or wire width measuring mark.
Compared with prior art, the present invention has the following advantages: lithography alignment method provided by the invention is by compensating extension deviant, extension is made to reach demand thickness and upwards be transmitted by substrate by alignment mark, thus solve the problem that the blocked up photoetching technique of extension cannot aim at, and to be prevented by correction means in advance that measurement pattern from offseting with epitaxial growth, deformation, and then avoid and cause pattern distortion by epitaxial growth and the problem of the alignment precision deviation produced, thus improve alignment precision.
Accompanying drawing explanation
Fig. 1 to Fig. 4 is the photoetching alignment mark structural representation for epitaxy technique in prior art.
Fig. 5 is the schematic flow sheet of the first embodiment of a kind of lithography alignment method for epitaxy technique of the present invention.
Fig. 6 and Fig. 7 is a kind of photoetching alignment mark structural representation for epitaxy technique of the present invention.
Fig. 8 is the angle lap-stain method schematic diagram of a kind of lithography alignment method for epitaxy technique of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Described in inside background technology, during due to epitaxial growth in semiconductor fabrication, due to the inhomogeneities of growth course, pattern distortion is more common a kind of problem, the position of alignment mark final in Fig. 4 is relative to the first alignment mark, want the position of the alignment mark realized in established technology, there occurs larger side-play amount.In order to overcome the problems referred to above, the present invention proposes a kind of lithography alignment method for epitaxy technique.
First, please refer to Fig. 5, Fig. 5 is the schematic flow sheet of the first embodiment of a kind of lithography alignment method for epitaxy technique of the present invention.Upper as can be seen from figure, the present invention includes following steps:
Step 21: preset extension total thickness value and determine single epitaxial deposition thickness value, the extension total thickness value preset is the epitaxial thickness value needed in technique, determines that the method for single epitaxial deposition thickness value comprises: the epitaxial loayer of deposit different-thickness; Use the multiple epitaxial loayers of mask aligner to deposit to carry out signal measurement respectively, obtain the alignment error under different epitaxial thickness state; Select the epitaxial thickness corresponding to minimum value of alignment error as single epitaxial deposition thickness value;
Step 22: by the extension deviant of decoration method determination single epitaxial deposition thickness value, ordinary stain method uses angle lap-stain method, this method is widely used in the measurement of epitaxial loayer, diffusion layer and ion implanted layer even depth, please refer to Fig. 8, Fig. 8 is angle lap-stain method schematic diagram, before surveying first sample be fixed on there is small inclination θ metal derby on, and grind out the inclined-plane that inclination angle is θ.Then, sample is placed in a kind of suitable solution and dyes, owing to selecting the result of chemical reaction, make a certain region (p type island region as PN junction) occur darker color.Like this, the length l in district to be measured can just be observed under the microscope.If θ is less than 1 °, then the thickness x corresponding to hypotenuse
j=θ * 1.In addition, also can, after angle lap dyeing, indirect interference fringe method be adopted to measure the bright wisp number calculated thickness occurred in the scope of l length.In etch process process, adhesive made by conventional polyimides, and dyestuff then can come in binding agent in disperse, will be set to b by the determined extension deviant of decoration method;
Step 23: according to the described extension deviant obtained, revise the position of alignment mark to be etched, if single epitaxial deposition thickness value is a, extension total thickness value is c, substep deposit number of times is: c/a round numbers n, and the compensation rate of alignment mark new after each deposit is b1, b1=(c-n × a) × b/a, if c/a exists cannot divide exactly fractional part, last deposit: b-b1*n;
Step 24: carry out epitaxial diposition, photoetching and etch described alignment mark, described alignment mark is mask aligner alignment mark, register mark, vernier mark, visual marking or wire width measuring mark;
Step 25: judge whether the thickness of described extension reaches the extension total thickness value preset, and if so, then turns to step 26: terminate, if not, then turn to step 24.
, please refer to the second embodiment of the present invention below, the present embodiment comprises step 31 to step 34: step 31: preset extension total thickness value and determine single epitaxial deposition thickness value; Step 32: by the extension deviant of decoration method determination single epitaxial deposition thickness value, the step 31 in the second embodiment is identical with step 22 with the step 21 in the first embodiment with step 32; Step 33: according to the described extension deviant obtained, revise the position of alignment mark to be etched, if single epitaxial deposition thickness value is a, extension total thickness value is c, substep deposit number of times is: c/a round numbers n, and the compensation rate of alignment mark new after each deposit is b1, b1=(c-n × a) × b/a, if c/a exists cannot divide exactly fractional part, last deposit: b-b1*n; Step 34: carry out epitaxial diposition, photoetching and etch described alignment mark; Step 35: judge whether deposit number of times is less than n, if so, then turns to step 26: terminate, if not, then turn to step 24.
Finally, please refer to Fig. 6 and Fig. 7, Fig. 6 and Fig. 7 is a kind of photoetching alignment mark structural representation for epitaxy technique of the present invention, can continue to use two width figure, i.e. Fig. 1 and Fig. 2 in background technology at this, Fig. 6 is on the basis of Fig. 2, the etching of carrying out, before etching, according to method provided by the invention, have modified the position of alignment mark 31 to be etched, thus the alignment mark 31 etched is offset; Fig. 7 is through epitaxial growth, correction, etching, then epitaxial growth, revise again, after the circulation technology that etches again, the thickness obtaining epitaxial loayer meets the figure of the requirement of the thickness preset.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (2)
1., for a lithography alignment method for epitaxy technique, it is characterized in that: said method comprising the steps of:
Step 1: preset extension total thickness value and determine single epitaxial deposition thickness value, determines that the method for single epitaxial deposition thickness value comprises: the epitaxial loayer of deposit different-thickness; Use the multiple epitaxial loayers of mask aligner to deposit to carry out signal measurement respectively, obtain the alignment error under different epitaxial thickness state; Select the epitaxial thickness corresponding to minimum value of alignment error as single epitaxial deposition thickness value;
Step 2: by the extension deviant of decoration method determination single epitaxial deposition thickness value;
Step 3: according to the described extension deviant obtained, revise the position of alignment mark to be etched;
Step 4: carry out epitaxial diposition, photoetching and etch described alignment mark;
Step 5: judge whether the thickness of described extension reaches the extension total thickness value preset, and if so, then technique terminates, and if not, then turns to step 4.
2. the lithography alignment method for epitaxy technique according to claim 1, is characterized in that: described alignment mark is mask aligner alignment mark, register mark, vernier mark, visual marking or wire width measuring mark.
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| US10013520B2 (en) * | 2013-10-03 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of determining if layout design is N-colorable |
| CN104766789A (en) * | 2015-03-31 | 2015-07-08 | 上海华虹宏力半导体制造有限公司 | Epitaxial growth technological method |
| CN109786227A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | Improve the method for photo-etching mark on epitaxial layer |
| CN110695514A (en) * | 2019-09-18 | 2020-01-17 | 广东工业大学 | Method for multi-laser composite processing of layered composite material |
| CN113741142B (en) * | 2020-05-29 | 2024-06-25 | 中芯国际集成电路制造(上海)有限公司 | Etching offset correction method and system and related equipment |
| CN113109997B (en) * | 2021-03-18 | 2022-08-26 | 上海信及光子集成技术有限公司 | Method and structure for measuring photoetching overlay error before and after epitaxy |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101325168A (en) * | 2007-06-13 | 2008-12-17 | 上海华虹Nec电子有限公司 | Method for measuring extent pattern drifting quantity |
| CN101465306A (en) * | 2007-12-19 | 2009-06-24 | 上海华虹Nec电子有限公司 | Method for measuring distortion of epitaxial growth picture |
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| CN101325168A (en) * | 2007-06-13 | 2008-12-17 | 上海华虹Nec电子有限公司 | Method for measuring extent pattern drifting quantity |
| CN101465306A (en) * | 2007-12-19 | 2009-06-24 | 上海华虹Nec电子有限公司 | Method for measuring distortion of epitaxial growth picture |
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