CN104766789A - Epitaxial growth technological method - Google Patents
Epitaxial growth technological method Download PDFInfo
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- CN104766789A CN104766789A CN201510148323.XA CN201510148323A CN104766789A CN 104766789 A CN104766789 A CN 104766789A CN 201510148323 A CN201510148323 A CN 201510148323A CN 104766789 A CN104766789 A CN 104766789A
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- epi
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Abstract
The invention discloses an epitaxial growth technological method. The method includes the steps that first, a photoetching mark is formed on a wafer substrate; second, an epitaxy grows; third, alignment is performed on the grown epitaxy through the photoetching mark formed at the previous time, and the photoetching technology is performed so that a new photoetching mark can be formed; fourth, the second step and the third step are repeated till the thickness of the expitaxy is required thickness. According to the method, the one-time EPI technology is divided into two or more EPI technologies, the photoetching technology is added into the divided EPI technologies, namely, the photoetching mark technology is performed after the EPI technology is performed one time, a good photoetching mark can be obtained after the final EPI, and therefore stability and accuracy of the subsequent photoetching technologies can be maintained.
Description
Technical field
The present invention relates to IC manufacturing field, particularly relate to EPI (extension) growth technique.
Background technology
At present, EPI (extension) growth technique is technique more common in semiconductor fabrication, but after EPI, particularly after thick EPI technique, usually can bring a problem: namely define bad photo-etching mark.As shown in Figure 1, before EPI technique, photo-etching mark is high-visible; And after EPI technique, the bad photo-etching mark of formation, visible even hardly, as shown in Figure 2.Bad photo-etching mark directly can cause the difficulty of follow-up photoetching Alignment Process, even cannot aim at.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of epitaxial growth technology method, and it can improve photoetching alignment mark.
For solving the problems of the technologies described above, epitaxial growth technology method of the present invention, step comprises:
1) in wafer substrate, photo-etching mark is formed;
2) growing epitaxial;
3) in step 2) in the extension that grows, the photo-etching mark once formed before utilization is aimed at, and carries out photoetching process, forms new photo-etching mark;
4) step 2 is repeated) ~ 3), until the thickness of extension reaches required thickness.
The material of described substrate is the material being applicable to carrying out epitaxial growth technology, such as monocrystalline silicon.
Preferably, each epitaxially grown thickness is 5 ~ 15 μm.
The EPI technique of the present invention by EPI technique being divided into more than twice, and photoetching process is added in the EPI technique of gradation, namely the technique of a photo-etching mark is done after an EPI, still good photo-etching mark be can obtain after making last EPI, thus stability and the accuracy of subsequent optical carving technology maintained.
Accompanying drawing explanation
Fig. 1 is the photo-etching mark before EPI technique.
Fig. 2 is the photo-etching mark after EPI technique.Wherein, the partial enlarged drawing that (b) is the photo-etching mark of figure (a) is schemed.
Fig. 3 is the first group for photo etching mark that the embodiment of the present invention is done before growth EPI.
Fig. 4 is the first group for photo etching mark after embodiment of the present invention first time growth EPI.
Fig. 5 is the second group for photo etching mark done after embodiment of the present invention first time growth EPI.
Fig. 6 is the photo-etching mark after the present invention twice EPI.
Embodiment
Understand more specifically for having technology contents of the present invention, feature and effect, now by reference to the accompanying drawings, details are as follows:
Refer to shown in Fig. 3-6, the epitaxial growth technology method of the present embodiment, concrete technology step is:
Step 1, in a slice wafer substrate, forms the first group for photo etching mark, as shown in Figure 3.Described substrate can be any material of applicable EPI epitaxial growth technology, such as monocrystalline silicon etc.
Step 2, first time grows EPI, and thickness is no more than 15 μm.Because EPI is not very thick, so after first time growth EPI, the first group for photo etching mark can keep shape preferably, as shown in Figure 2.
Step 3, in the material of first time EPI, utilizes the first group for photo etching mark to aim at, carries out photoetching process, form the second group for photo etching mark, as shown in Figure 3.
Step 4, second time grows EPI.After second time growth EPI, the first group for photo etching mark has bad phenomenon, and the second group for photo etching mark can also keep shape preferably, as shown in Figure 4.
By that analogy, can go on doing sequentially, according to the thickness that final epitaxial growth needs, the number of times of mean allocation EPI and photoetching process, with the combination of repeatedly EPI and photoetching process, obtain good photo-etching mark, to maintain stability and the accuracy of subsequent optical carving technology.The thickness that epitaxial growth needs is thicker, and number of times can be more, is generally good with thickness 5 ~ 15 μm/secondary.
Claims (4)
1. epitaxial growth technology method, is characterized in that, step comprises:
1) in wafer substrate, photo-etching mark is formed;
2) growing epitaxial;
3) in step 2) in the extension that grows, the photo-etching mark once formed before utilization is aimed at, and carries out photoetching process, forms new photo-etching mark;
4) step 2 is repeated) ~ 3), until the thickness of extension reaches required thickness.
2. method according to claim 1, is characterized in that, the material of described substrate is the material being applicable to carrying out epitaxial growth technology.
3. method according to claim 2, is characterized in that, the material of described substrate is monocrystalline silicon.
4. method according to claim 1, is characterized in that, each epitaxially grown thickness is 5 ~ 15 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510148323.XA CN104766789A (en) | 2015-03-31 | 2015-03-31 | Epitaxial growth technological method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510148323.XA CN104766789A (en) | 2015-03-31 | 2015-03-31 | Epitaxial growth technological method |
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| CN104766789A true CN104766789A (en) | 2015-07-08 |
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| CN201510148323.XA Pending CN104766789A (en) | 2015-03-31 | 2015-03-31 | Epitaxial growth technological method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105118824A (en) * | 2015-07-21 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of photoetching alignment mark applied to double-layer epitaxial process |
| CN105529322A (en) * | 2016-01-29 | 2016-04-27 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing photoetching alignment mark after chemical mechanical polishing process |
| CN109786227A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | Improve the method for photo-etching mark on epitaxial layer |
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| US6468704B1 (en) * | 2001-04-16 | 2002-10-22 | Taiwan Semiconductor Manufacturing Company | Method for improved photomask alignment after epitaxial process through 90° orientation change |
| JP2003007618A (en) * | 2001-06-25 | 2003-01-10 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial silicon wafer |
| CN101452211A (en) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | Method for producing photolithography alignment mark |
| CN102005369A (en) * | 2010-09-10 | 2011-04-06 | 上海集成电路研发中心有限公司 | Photoetching alignment method used for epitaxy process |
| CN102376531A (en) * | 2010-08-12 | 2012-03-14 | 上海华虹Nec电子有限公司 | Method for improving photoetching marking signal after epitaxial filling and CMP (corrugated metal pipe) grinding |
| JP2012089736A (en) * | 2010-10-21 | 2012-05-10 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
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2015
- 2015-03-31 CN CN201510148323.XA patent/CN104766789A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468704B1 (en) * | 2001-04-16 | 2002-10-22 | Taiwan Semiconductor Manufacturing Company | Method for improved photomask alignment after epitaxial process through 90° orientation change |
| JP2003007618A (en) * | 2001-06-25 | 2003-01-10 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial silicon wafer |
| CN101452211A (en) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | Method for producing photolithography alignment mark |
| CN102376531A (en) * | 2010-08-12 | 2012-03-14 | 上海华虹Nec电子有限公司 | Method for improving photoetching marking signal after epitaxial filling and CMP (corrugated metal pipe) grinding |
| CN102005369A (en) * | 2010-09-10 | 2011-04-06 | 上海集成电路研发中心有限公司 | Photoetching alignment method used for epitaxy process |
| JP2012089736A (en) * | 2010-10-21 | 2012-05-10 | Fuji Electric Co Ltd | Method of manufacturing semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105118824A (en) * | 2015-07-21 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of photoetching alignment mark applied to double-layer epitaxial process |
| CN105529322A (en) * | 2016-01-29 | 2016-04-27 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing photoetching alignment mark after chemical mechanical polishing process |
| CN105529322B (en) * | 2016-01-29 | 2018-04-17 | 上海华虹宏力半导体制造有限公司 | The production method of photoetching alignment mark after CMP process |
| CN109786227A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | Improve the method for photo-etching mark on epitaxial layer |
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Application publication date: 20150708 |
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