CN102466977A - Mark structure used for measuring distortion of projection object lens and its method - Google Patents
Mark structure used for measuring distortion of projection object lens and its method Download PDFInfo
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- CN102466977A CN102466977A CN2010105395428A CN201010539542A CN102466977A CN 102466977 A CN102466977 A CN 102466977A CN 2010105395428 A CN2010105395428 A CN 2010105395428A CN 201010539542 A CN201010539542 A CN 201010539542A CN 102466977 A CN102466977 A CN 102466977A
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Abstract
The invention discloses a mark structure used for measuring distortion of a projection object lens, which is formed on a mask, a first direction and a second direction which is perpendicular to the first direction are defined on the mask, the mark structure comprises a first figure area and a second figure area, an independent mark is provided on the central position of the first figure area, the second figure area is composed of array marks, and the first figure area and the second figure area are arrayed along the second direction. The invention also discloses a method for measuring the distortion of a projection object lens, which is characterized in that the independent mark is superposed with the central position of the projection object lens object space field, the workpiece bench position is set as xws = x-M*Xij, and yws = y-M *Yi, the independent mark is subjected to exposure, wherein M is the projection object lens multiplying power, x and y are central positions of a silicon chip exposure field; the center of the second figure area or the center of the mask is superposed with the center position of the projection object lens object space field, the workpiece bench position is set as xws = x, yws = y and then the mark is subjected to exposure; the position error delta Xij, and Delta Yij of overlay mark are detected, and the projection object lens distortion is calculated.
Description
Technical field
The present invention relates to a kind of integrated circuit manufacturing equipment manufacturing field, relate in particular to a kind of mark that is used for detecting the distortion of exposure system projection objective, and detection method.
Background technology
Litho machine is a kind of equipment that integrated circuit is made that is applied to, and utilizes this equipment to include but not limited to: integrated circuit is made lithographic equipment, liquid crystal panel lithographic equipment, photomask marking press equipment, MEMS (microelectromechanical systems)/MOMS (low-light machine system) lithographic equipment, advanced encapsulation lithographic equipment, printed circuit board (PCB) lithographic equipment and printed circuit board (PCB) processing unit (plant) etc.
The projection objective distortion is the key factor that influences image forming quality of photoetching machine.The distortion that projection objective distortion can not only cause object lens to form images can make the figure that makes public to the silicon chip be subjected to displacement with respect to its ideal position simultaneously, thereby cause the alignment error.Modern integrated circuits generally is made up of the tens layers circuit, thereby extremely strict to the coupling alignment error requirements of litho machine.And the distortion of projection objective is the key factor that influences coupling alignment between the litho machine.Therefore, the detection of projection objective distortion is indispensable for the alignment error that guarantees litho machine.
A kind of method that detects the projection objective distortion has been proposed among prior art US6573986 and the US7099011.As shown in Figure 1; This method is utilized a kind of special marker 101; Respectively at the work stage non-displacement; Work stage is made public to having displacement and work stage under three kinds of different situations that displacement is arranged, to carry out three times at Y at X, thereby forms the alignment test badge at the silicon chip face, and utilizes the alignment error of this alignment test badge to calculate the projection objective distortion.There is following shortcoming in this method, and at first this method is because need be at X and Y to the travelling workpiece platform, thereby after making public through three times, and the distortion of the marginal point of exposure field can't acquire.Secondly because in this method in the used test mark 101, X receives measurement point and the visual field size limits to distance 103 and Y to the design of distance 102, so causes object lens distortion measurement precision not high.
The problem that above-mentioned measurement markers of the prior art and measuring method exist also will directly have influence on the final performance of lithographic equipment.
Summary of the invention
The object of the present invention is to provide a kind of mark and method of measuring the projection objective distortion, to promote the measuring accuracy of projection objective distortion.
For reaching above-mentioned and other purpose, the present invention provides a kind of mark structure that is used to measure the projection objective distortion, comprises first graphics field, and the center position of said first graphics field is provided with an independent marking; And the second graph zone, said second graph zone is made up of arrays of indicia, and arrange along this second direction in said first graphics field and second graph zone.
In the above-mentioned mark structure, it is characterized in that said first graphics field is identical along the length of said first direction with the second graph zone, said first graphics field is identical along the length of said second direction with the second graph zone.
In the above-mentioned mark structure, the quantity of said arrays of indicia is M * N, and wherein M, N are the positive integers greater than 2.
In the above-mentioned mark structure, said independent marking is a square block, or the positive square structure of being made up of lines.
In the above-mentioned mark structure, said arrays of indicia is formed by at least two mutually different square nested, concentric of size, or the square nested, concentric that is made up of at least two mutually different independent lines of size forms.
The present invention also provides another kind to be used to measure the mark structure of projection objective distortion; This mark structure is formed on the mask; Definition has first direction and the second direction vertical with this first direction on this mask, and this mark structure comprises: be positioned at the independent marking on the said mask center; And arrays of indicia, said arrays of indicia is around said independent marking, and on said first direction and second direction with said independent marking interval one preset distance.
In above-mentioned another mark structure, said preset distance is greater than 0.5mm, and the quantity of said arrays of indicia is M * N, and wherein M, N are the positive integers greater than 2.
In above-mentioned another mark structure, it is characterized in that said first graphics field is identical along the length of said first direction with the second graph zone, said first graphics field is identical along the length of said second direction with the second graph zone.
In above-mentioned another mark structure, the quantity of said arrays of indicia is M * N, and wherein M, N are the positive integers greater than 2.
In above-mentioned another mark structure, said independent marking is a square block, or the positive square structure of being made up of lines.
In above-mentioned another mark structure, said arrays of indicia is formed by at least two mutually different square nested, concentric of size, or the square nested, concentric that is made up of at least two mutually different independent lines of size forms.
The present invention also provides a kind of method of utilizing above-mentioned mark structure to measure the projection objective distortion, comprises step:
S1: independent marking is overlapped with projection objective true field center;
S2: the work stage position is set to x respectively
Ws=x-M * X
I, j, y
Ws=y-M * Y
i, said independent marking is made public, wherein, M is a projection objective magnification, x, y are center, silicon wafer exposure field;
S3: the center in second graph zone or the center of mask are overlapped with projection objective true field center, and the work stage position is set to x
Ws=x, y
Ws=y post-exposure;
S4: the site error Δ x that detects overlay mark
I, j, Δ y
I, j
S5: calculate the projection objective distortion.
In the said method, the formula of said calculating projection objective distortion is described below:
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×(√((M×X
i，j)
2+(M×Y
i，j)
2))
2×X
i， j
Δy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×(√((M×X
i，j)
2+(M×Y
i，j)
2))
2×Y
i，j。
Compare with the projection objective distortion pick-up unit and the method for prior art; Because the present invention has utilized a kind of mark structure that comprises independent marking and arrays of indicia; In the process of object lens distortion measurement; At first independent marking is made public in the silicon wafer exposure field, secondly mark array is made public in same silicon wafer exposure field through whole projection objective visual field through center, projection objective visual field.After the double exposure, form overlay mark, can obtain the projection objective distortion through measuring the alignment error at silicon chip.The advantage of this method is that the distortion of being had a few in the visual field all can obtain through after the exposure.Secondly, the site error of being had a few is all with respect to the site error of central point, thereby the distortion that can obtain any visual field point, and while distortion measurement precision is improved.
Description of drawings
Can graphicly further be understood through following detailed Description Of The Invention and appended about advantage of the present invention and spirit.
Fig. 1 is a mark structure of measuring the object lens distortion in the prior art;
Fig. 2 is first embodiment of the disclosed mark structure of the present invention;
Fig. 3 a is the synoptic diagram of independent marking to Fig. 3 c;
Fig. 4 a is the synoptic diagram of arrays of indicia to Fig. 4 b;
Fig. 5 is an arrays of indicia graph area internal labeling distribution schematic diagram;
Fig. 6 is exposed to the synoptic diagram on the silicon chip with the independent marking graph area;
Fig. 7 is exposed to the synoptic diagram on the silicon chip with the arrays of indicia graph area;
Fig. 8 is the overlay mark synoptic diagram that forms after exposure is accomplished;
Fig. 9 is the synoptic diagram of the method for the disclosed measurement object lens distortion of the present invention;
Figure 10 is second embodiment of the disclosed mark structure of the present invention;
Embodiment
Specify specific embodiment of the present invention below in conjunction with accompanying drawing.
The present invention proposes a kind of mark structure that comprises independent marking and arrays of indicia, and utilizes independent marking and arrays of indicia to realize the accurate measurement of projection objective distortion.During the object lens distortion measurement, at first independent marking is made public in the silicon wafer exposure field, secondly mark array is made public in same silicon wafer exposure field through whole projection objective visual field through center, projection objective visual field.After the double exposure, form overlay mark, can obtain the projection objective distortion through measuring the alignment error at silicon chip.The advantage of this method is that the distortion of being had a few in the visual field all can obtain through after the exposure.Secondly, the site error of being had a few is all with respect to the site error of central point, thereby the distortion that can obtain any visual field point, and while distortion measurement precision is improved.
See also Fig. 2, Fig. 2 is the disclosed a kind of preferred embodiment that is used to test projection objective distortion mark structure of the present invention.As shown in Figure 1; Comprise at least two marker graphic districts on the mask 201; Marker graphic district 202 and marker graphic district 203 on mask 201 along directions X (first direction) with along the identical length of Y direction (second direction) with, promptly the size in two marker graphic districts is consistent.Marker graphic district 202 and 203 size are not more than the size of even field of illumination, the static visual field of photo-etching machine objective lens object plane.Simultaneously, in order to guarantee to detect comprehensively, in the design, make marker graphic district 202 and 203 be slightly less than the true field size of object lens.Comprise a marker graphic district 202 on the mask 201, comprise at least one marker graphic district 203.If mask 201 is L at the width of y direction, marker graphic district 203 is dy at the width of y direction, then can arrange L/dy-1 marker graphic district 203 on the mask 201.
In the present embodiment, only comprise a mark 204 in the marker graphic district 202, therefore can claim in the present technique scheme that mark 204 is an independent marking.The structure of independent marking 204 can be a quadrilateral shape arbitrarily shown in Fig. 3 a to Fig. 3 c, like the square type, by four independent lines constitute square, " " type, or in other similar structures any.Independent marking 204 is positioned at the center in marker graphic district 202.
In the marker graphic district 203, comprise m capable * a n row regularly arranged mark, equate at interval between each mark that wherein m and n are all desirable greater than 2 positive integer, therefore title mark 205 is an arrays of indicia in the present technique scheme.The structure of arrays of indicia 205 can be to be formed by at least two mutually different square nested, concentric of size, or the square nested, concentric that is made up of at least two mutually different independent lines of size forms shown in Fig. 4 a and 4b.The distribution of each arrays of indicia is as shown in Figure 5 in the marker graphic district 203, is initial point with the center in marker graphic district 203, and with the x of true field, the y axle is set up coordinate system for coordinate, in the mask marked graph area 203 underlined position can be expressed as (X respectively
I, j, Y
I, j), wherein, i gets 2,3,4 ..., m, j gets 2,3,4 ..., n.
Below through Fig. 9 the concrete steps of using mask 201 to realize the distortion of static measurement projection objectives are described:
901 move to marker graphic district 202 in the projection objective visual field.
902 make the center in marker graphic district 202, and promptly independent marking 204 overlaps with projection objective true field center.
903 with work stage position (x
Ws, y
Ws) be set to x respectively
Ws=x-M * X
I, j, y
Ws=y-M * Y
I, j, wherein, M is a projection objective magnification, x, y are center, silicon wafer exposure field.
904 pairs of mask marker graphic districts 202 carry out static exposure.After exposure was accomplished, the graphical distribution that will on silicon chip, obtain was as shown in Figure 6.Among Fig. 6,601 is silicon chip, and 602 is an exposure field on the silicon chip, and 603 is the center of exposure field, and 604 for being exposed to the independent marking on the silicon chip.The zone of making public to the silicon chip can be selected arbitrarily.
905 confirm whether all work stage position exposures finish, if " being " carried out next procedure; If " denying " returns 903.
906 move to marker graphic district 203 in the projection objective visual field, and the center in marker graphic district 203 is overlapped with projection objective true field center.
907 work stage positions are set to x
Ws=x, y
Ws=y, x wherein, y is the exposure field center of having explained in 903.
908 pairs of silicon chips carry out static exposure.After exposure was accomplished, the graphical distribution that will on silicon chip, obtain was as shown in Figure 7.Among Fig. 7,701 is silicon chip, and 702 is an exposure field on the silicon chip, and 703 is the center of exposure field, the 704th, be exposed to independent marking and arrays of indicia on the silicon chip.
After 909 exposures are accomplished, to PROCESS FOR TREATMENT such as silicon chip develop.
910 detect the overlay mark that the exposure back forms.The overlay mark that the exposure back forms as shown in Figure 8.Utilize the position deviation between alignment surveying instrument certification mark 801 centers and 802 centers.
909 calculate the projection objective distortion.Can know that from above-mentioned step of exposure mark 801 is through the imaging of center, projection objective visual field, its site error is mainly caused by the stepping error of work stage.Mark 802 is by difference imaging in the projection objective visual field, and its site error is mainly caused by the projection objective distortion.If the site error between mark 801 and the mark 802 is designated as Δ x
I, j, Δ y
I, j, then the object lens distortion can be obtained by following formula.
Δx
i，j＝Tx+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×X
i，j+D
5×(√((M×X
i，j)
2+(M×Y
i，j)
2))
2×X
i， j
Δy
i，j＝Ty+D
3×((M×X
i，j)
2+(M×Y
i，j)
2)×Y
i，j+D
5×(√((M×X
i，j)
2+(M×Y
i，j)
2))
2×Y
i， j
Wherein: Tx, Ty represent the image planes translation;
D
3The three rank distortion of expression projection objective;
M representes projection objective magnification;
D
5The five rank distortion of expression projection objective;
X
I, j, Y
I, jThe position coordinates of the capable j row of i mark in the array marker graphic district on the expression mask substrate;
Δ x
I, j, Δ y
I, jAlignment error between expression independent marking and the arrays of indicia;
See also Figure 10, Figure 10 is the disclosed another kind of preferred embodiment that is used to test projection objective distortion mark structure of the present invention.Shown in figure 10, comprise two kinds of marks on the mask 1003, mark 1002 and mark 1001.Mark 1002 only has one, thus be called independent marking, this independent marking 1002 and be positioned at the mask center, its x is in the 0.5mm scope, requiring not allow to arrange other marks with y.Mark 1001 comprise m capable * a n row regularly arranged mark, equate at interval between each mark that wherein m and n are all desirable greater than 2 positive integer, so be called arrays of indicia.Mark 1001 can be arranged in range mark 1002 center x to the optional position of y outside the 0.5mm scope.This test mask layout can be used for carrying out the projection objective dynamical distortion and measures; Its measuring method and above-mentioned be that to measure the method for projection objective distortion with mark structure shown in Figure 2 roughly the same; Its difference is; Be to carry out in the projection objective distortion measurement process, need when the array mark makes public the mask center is overlapped with projection objective true field center with mark structure shown in Figure 10.
The process flow diagram of being introduced in its step of exposure and the accompanying drawing 9 is identical.Different is, mark 1002 is a static exposure, and the true field that this moment need litho machine is set to make public behind the 0.5mmX0.5mm.Mark 1001 is a dynamic exposure.After exposure finishes, can obtain projection objective dynamical distortion size through the error of measuring overlay mark.
Compared with prior art, projection objective distortion mark and method are tested in involved in the present invention being used to, and its measurement point does not receive the restriction of the visual field size of projection objective.This measuring method is succinctly practical, and precision is higher when being used to measure the projection objective distortion.Improve the overall performance of lithographic equipment simultaneously.
Described in this instructions is preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (11)
1. one kind is used to measure the mark structure that projection objective distorts, and this mark structure is formed on the mask, and definition has first direction and the second direction vertical with this first direction on this mask, and this mark structure comprises:
First graphics field, the center position of said first graphics field is provided with an independent marking; And
At least one second graph zone, said second graph zone is made up of arrays of indicia, and arrange along this second direction in said first graphics field and second graph zone.
2. the mark structure that is used to measure the projection objective distortion as claimed in claim 1; It is characterized in that said first graphics field is identical along the length of said first direction with the second graph zone, said first graphics field is identical along the length of said second direction with the second graph zone.
3. the mark structure that is used to measure the projection objective distortion as claimed in claim 1, the quantity that it is characterized in that said arrays of indicia is M * N, wherein M, N are the positive integer greater than 2.
4. the mark structure that is used to measure the projection objective distortion as claimed in claim 1 is characterized in that said independent marking is a square block, or the positive square structure of being made up of lines.
5. the mark structure that is used to measure the projection objective distortion as claimed in claim 1; It is characterized in that said arrays of indicia is formed by at least two mutually different square nested, concentric of size, or the square nested, concentric that is made up of at least two mutually different independent lines of size forms.
6. one kind is used to measure the mark structure that projection objective distorts, and this mark structure is formed on the mask, and definition has first direction and the second direction vertical with this first direction on this mask, and this mark structure comprises:
Be positioned at the independent marking on the said mask center; And
Arrays of indicia, around said independent marking, and on said first direction and second direction with said independent marking interval one preset distance.
7. the mark structure that is used to measure the projection objective distortion as claimed in claim 6 is characterized in that said independent marking is a square block, or the positive square structure of being made up of lines.
8. the mark structure that is used to measure the projection objective distortion as claimed in claim 6; It is characterized in that said arrays of indicia is formed by at least two mutually different square nested, concentric of size, or the square nested, concentric that is made up of at least two mutually different independent lines of size forms.
9. the mark structure that is used to measure the projection objective distortion as claimed in claim 6 is characterized in that said preset distance is greater than 0.5mm.
10. the mark structure that is used to measure the projection objective distortion as claimed in claim 6, the quantity that it is characterized in that said arrays of indicia is M * N, wherein M, N are the positive integer greater than 2.
11. a method of measuring the projection objective distortion is utilized like each said mark structure among the claim 1-10, it is characterized in that:
S1: said independent marking is overlapped with said projection objective true field center;
S2: the work stage position is set to x respectively
Ws=x-M * X
I, j, y
Ws=y-M * Y
i, said independent marking is made public, wherein, M is said projection objective magnification, x, y are center, silicon wafer exposure field;
S3: the center in said second graph zone or the center of mask are overlapped with projection objective true field center, and the work stage position is set to x
Ws=x, y
Ws=y post-exposure;
S4: the site error Δ x that detects overlay mark
I, j, Δ y
I, j
S5: calculate the projection objective distortion.
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|---|---|---|---|
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|---|---|---|---|
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| CN103324036A (en) * | 2013-07-04 | 2013-09-25 | 中国科学院光电技术研究所 | Device and method for detecting ratio and distortion of projection objective |
| CN103869603A (en) * | 2012-12-14 | 2014-06-18 | 上海空间电源研究所 | Photolithographic plate assembly and photolithographic alignment accuracy detection method |
| CN109932870A (en) * | 2017-12-18 | 2019-06-25 | 佳能株式会社 | Measurement method, measuring device, exposure device and article manufacturing method |
| CN109957503A (en) * | 2017-12-14 | 2019-07-02 | 长光华大基因测序设备（长春）有限公司 | A kind of processing chip and its application for high-throughput gene sequencing equipment |
| CN110568729A (en) * | 2018-06-05 | 2019-12-13 | 上海微电子装备（集团）股份有限公司 | Aberration measuring device and method |
| CN111443570A (en) * | 2020-04-14 | 2020-07-24 | 长江存储科技有限责任公司 | Photomask, semiconductor device and method for designing photomask |
| US20220365441A1 (en) * | 2021-05-07 | 2022-11-17 | Shanghai Institute Of Optics And Fine Mechanics, Chinese Academy Of Sciences | Multi-channel device and method for measuring distortion and magnification of objective lens |
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| CN103869603A (en) * | 2012-12-14 | 2014-06-18 | 上海空间电源研究所 | Photolithographic plate assembly and photolithographic alignment accuracy detection method |
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| CN111443570A (en) * | 2020-04-14 | 2020-07-24 | 长江存储科技有限责任公司 | Photomask, semiconductor device and method for designing photomask |
| CN111443570B (en) * | 2020-04-14 | 2023-09-29 | 长江存储科技有限责任公司 | Photomask, semiconductor device and design method of photomask |
| US20220365441A1 (en) * | 2021-05-07 | 2022-11-17 | Shanghai Institute Of Optics And Fine Mechanics, Chinese Academy Of Sciences | Multi-channel device and method for measuring distortion and magnification of objective lens |
| US11604418B2 (en) * | 2021-05-07 | 2023-03-14 | Shanghai Institute Of Optics And Fine Mechanics, Chinese Academy Of Sciences | Multi-channel device and method for measuring distortion and magnification of objective lens |
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